TWI814577B - 供給罐、供給裝置、供給系統 - Google Patents

供給罐、供給裝置、供給系統 Download PDF

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Publication number
TWI814577B
TWI814577B TW111134078A TW111134078A TWI814577B TW I814577 B TWI814577 B TW I814577B TW 111134078 A TW111134078 A TW 111134078A TW 111134078 A TW111134078 A TW 111134078A TW I814577 B TWI814577 B TW I814577B
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TW
Taiwan
Prior art keywords
processing liquid
region
area
pipe
liquid
Prior art date
Application number
TW111134078A
Other languages
English (en)
Chinese (zh)
Other versions
TW202312325A (zh
Inventor
古矢正明
小林浩秋
森秀樹
Original Assignee
日商芝浦機械電子裝置股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商芝浦機械電子裝置股份有限公司 filed Critical 日商芝浦機械電子裝置股份有限公司
Publication of TW202312325A publication Critical patent/TW202312325A/zh
Application granted granted Critical
Publication of TWI814577B publication Critical patent/TWI814577B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0422—Apparatus for fluid treatment for etching for wet etching
    • H10P72/0424—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0448—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring

Landscapes

  • Weting (AREA)
  • Coating Apparatus (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
  • Photographic Processing Devices Using Wet Methods (AREA)
  • Feeding And Watering For Cattle Raising And Animal Husbandry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
TW111134078A 2021-09-13 2022-09-08 供給罐、供給裝置、供給系統 TWI814577B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021148834A JP7438171B2 (ja) 2021-09-13 2021-09-13 供給タンク、供給装置、供給システム
JP2021-148834 2021-09-13

Publications (2)

Publication Number Publication Date
TW202312325A TW202312325A (zh) 2023-03-16
TWI814577B true TWI814577B (zh) 2023-09-01

Family

ID=85479813

Family Applications (2)

Application Number Title Priority Date Filing Date
TW111134078A TWI814577B (zh) 2021-09-13 2022-09-08 供給罐、供給裝置、供給系統
TW112128057A TWI847816B (zh) 2021-09-13 2022-09-08 供給罐、供給裝置、供給系統

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW112128057A TWI847816B (zh) 2021-09-13 2022-09-08 供給罐、供給裝置、供給系統

Country Status (5)

Country Link
US (1) US12347699B2 (https=)
JP (1) JP7438171B2 (https=)
KR (2) KR102658584B1 (https=)
CN (1) CN115810561B (https=)
TW (2) TWI814577B (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7438171B2 (ja) * 2021-09-13 2024-02-26 芝浦メカトロニクス株式会社 供給タンク、供給装置、供給システム
CN117259313B (zh) * 2022-06-14 2026-03-20 天津市环欧新能源技术有限公司 一种储液槽及设有该储液槽的清洗机

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201324662A (zh) * 2011-10-31 2013-06-16 細美事有限公司 基板處理裝置和化學回收之方法
US20140216500A1 (en) * 2013-02-01 2014-08-07 Taiwan Semicunductor Manufacturing Co., Ltd. Single Wafer Cleaning Tool with H2SO4 Recycling
TW201448020A (zh) * 2013-03-29 2014-12-16 芝浦機械電子裝置股份有限公司 濕式蝕刻裝置
TW201501195A (zh) * 2013-03-15 2015-01-01 東京威力科創Ｆｓｉ股份有限公司 用以提供加熱的蝕刻溶液之處理系統及方法
US10249505B2 (en) * 2009-03-31 2019-04-02 Kurita Water Industries Ltd. Method for treating etching solution

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0978263A (ja) * 1995-09-12 1997-03-25 Hitachi Ltd Ｃｒエッチング装置
JP2002110588A (ja) * 2000-09-27 2002-04-12 Nec Kansai Ltd チップ製造装置
JP3761457B2 (ja) 2001-12-04 2006-03-29 Ｎｅｃエレクトロニクス株式会社 半導体基板の薬液処理装置
JP2004228467A (ja) * 2003-01-27 2004-08-12 Dainippon Screen Mfg Co Ltd 基板処理装置および基板処理方法
CN1981375A (zh) * 2004-07-02 2007-06-13 东京毅力科创株式会社 半导体器件的制造方法
JP2007258462A (ja) 2006-03-23 2007-10-04 Dainippon Screen Mfg Co Ltd 基板処理装置および基板処理方法
TWI439571B (zh) * 2007-01-15 2014-06-01 芝浦機械電子裝置股份有限公司 Sulfuric acid electrolysis device, electrolysis method and substrate processing device
JP5148889B2 (ja) * 2007-02-09 2013-02-20 株式会社東芝 洗浄方法及び電子デバイスの製造方法
JP5173500B2 (ja) 2008-03-11 2013-04-03 大日本スクリーン製造株式会社 処理液供給装置およびそれを備えた基板処理装置
CA2634672C (en) * 2008-06-09 2013-03-12 Jerry Hanna Water reaction tank
JP5106523B2 (ja) * 2009-12-16 2012-12-26 株式会社東芝 エッチング処理方法、微細構造体の製造方法、およびエッチング処理装置
JP6010457B2 (ja) 2012-12-28 2016-10-19 東京エレクトロン株式会社 液処理装置および薬液回収方法
JP6022431B2 (ja) * 2013-10-17 2016-11-09 東京エレクトロン株式会社 基板液処理装置及び基板液処理方法
JP6454629B2 (ja) * 2014-12-16 2019-01-16 東京エレクトロン株式会社 基板液処理装置
JP2018056469A (ja) * 2016-09-30 2018-04-05 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
JP2019192863A (ja) 2018-04-27 2019-10-31 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
JP2021034561A (ja) 2019-08-23 2021-03-01 キオクシア株式会社 半導体製造装置
JP7438171B2 (ja) * 2021-09-13 2024-02-26 芝浦メカトロニクス株式会社 供給タンク、供給装置、供給システム

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10249505B2 (en) * 2009-03-31 2019-04-02 Kurita Water Industries Ltd. Method for treating etching solution
TW201324662A (zh) * 2011-10-31 2013-06-16 細美事有限公司 基板處理裝置和化學回收之方法
US20140216500A1 (en) * 2013-02-01 2014-08-07 Taiwan Semicunductor Manufacturing Co., Ltd. Single Wafer Cleaning Tool with H2SO4 Recycling
TW201501195A (zh) * 2013-03-15 2015-01-01 東京威力科創Ｆｓｉ股份有限公司 用以提供加熱的蝕刻溶液之處理系統及方法
TW201448020A (zh) * 2013-03-29 2014-12-16 芝浦機械電子裝置股份有限公司 濕式蝕刻裝置

Also Published As

Publication number Publication date
TWI847816B (zh) 2024-07-01
JP2023041453A (ja) 2023-03-24
CN115810561B (zh) 2025-07-08
US12347699B2 (en) 2025-07-01
JP7438171B2 (ja) 2024-02-26
KR20240049263A (ko) 2024-04-16
TW202312325A (zh) 2023-03-16
KR102658584B1 (ko) 2024-04-17
CN115810561A (zh) 2023-03-17
KR20230039532A (ko) 2023-03-21
TW202349545A (zh) 2023-12-16
KR102797838B1 (ko) 2025-04-17
US20230077617A1 (en) 2023-03-16

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