TWI808227B - 基板清洗裝置及基板清洗方法 - Google Patents

基板清洗裝置及基板清洗方法 Download PDF

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Publication number
TWI808227B
TWI808227B TW108126694A TW108126694A TWI808227B TW I808227 B TWI808227 B TW I808227B TW 108126694 A TW108126694 A TW 108126694A TW 108126694 A TW108126694 A TW 108126694A TW I808227 B TWI808227 B TW I808227B
Authority
TW
Taiwan
Prior art keywords
substrate
cleaning
cleaning tool
processed
tool
Prior art date
Application number
TW108126694A
Other languages
English (en)
Chinese (zh)
Other versions
TW202017079A (zh
Inventor
石橋知淳
Original Assignee
日商荏原製作所股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商荏原製作所股份有限公司 filed Critical 日商荏原製作所股份有限公司
Publication of TW202017079A publication Critical patent/TW202017079A/zh
Application granted granted Critical
Publication of TWI808227B publication Critical patent/TWI808227B/zh

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Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0402Apparatus for fluid treatment
    • H10P72/0406Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0402Apparatus for fluid treatment
    • H10P72/0406Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0412Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly scrubbing means, e.g. brushes
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B1/00Cleaning by methods involving the use of tools
    • B08B1/10Cleaning by methods involving the use of tools characterised by the type of cleaning tool
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B1/00Cleaning by methods involving the use of tools
    • B08B1/10Cleaning by methods involving the use of tools characterised by the type of cleaning tool
    • B08B1/14Wipes; Absorbent members, e.g. swabs or sponges
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04Cleaning involving contact with liquid
    • B08B3/08Cleaning involving contact with liquid the liquid having chemical or dissolving effect
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00Cleaning of wafers, substrates or parts of devices
    • H10P70/10Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/15Cleaning before device manufacture, i.e. Begin-Of-Line process by wet cleaning only
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00Cleaning of wafers, substrates or parts of devices
    • H10P70/20Cleaning during device manufacture
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00Cleaning of wafers, substrates or parts of devices
    • H10P70/50Cleaning of wafers, substrates or parts of devices characterised by the part to be cleaned
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00Cleaning of wafers, substrates or parts of devices
    • H10P70/50Cleaning of wafers, substrates or parts of devices characterised by the part to be cleaned
    • H10P70/54Cleaning of wafer edges
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0402Apparatus for fluid treatment
    • H10P72/0406Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0428Apparatus for mechanical treatment or grinding or cutting
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7618Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating carrousel

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Manufacturing Of Printed Wiring (AREA)
TW108126694A 2018-08-09 2019-07-29 基板清洗裝置及基板清洗方法 TWI808227B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018-150053 2018-08-09
JP2018150053A JP7224128B2 (ja) 2018-08-09 2018-08-09 基板用洗浄具、基板洗浄装置、基板処理装置、基板処理方法および基板用洗浄具の製造方法

Publications (2)

Publication Number Publication Date
TW202017079A TW202017079A (zh) 2020-05-01
TWI808227B true TWI808227B (zh) 2023-07-11

Family

ID=67658597

Family Applications (1)

Application Number Title Priority Date Filing Date
TW108126694A TWI808227B (zh) 2018-08-09 2019-07-29 基板清洗裝置及基板清洗方法

Country Status (7)

Country Link
US (1) US11424138B2 (https=)
EP (1) EP3608948A1 (https=)
JP (1) JP7224128B2 (https=)
KR (1) KR102661661B1 (https=)
CN (1) CN110828334A (https=)
SG (1) SG10201907194RA (https=)
TW (1) TWI808227B (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7166132B2 (ja) 2018-10-12 2022-11-07 株式会社荏原製作所 基板洗浄部材および基板洗浄装置
US11335588B2 (en) * 2019-06-18 2022-05-17 Ebara Corporation Substrate holding apparatus and substrate processing apparatus
JP7641714B2 (ja) * 2020-08-19 2025-03-07 株式会社荏原製作所 洗浄具のクリーニング方法、装置、基板洗浄装置及び洗浄具の製造方法
US11823916B2 (en) * 2020-11-06 2023-11-21 Applied Materials, Inc. Apparatus and method of substrate edge cleaning and substrate carrier head gap cleaning
CN113078078A (zh) * 2021-03-19 2021-07-06 长鑫存储技术有限公司 晶圆清洗方法及晶圆清洗装置
US12131896B2 (en) * 2021-08-30 2024-10-29 Taiwan Semiconductor Manufacturing Company Ltd. Method for wafer backside polishing
JP7508426B2 (ja) * 2021-09-14 2024-07-01 芝浦メカトロニクス株式会社 洗浄装置
US12525468B2 (en) 2022-12-30 2026-01-13 Applied Materials, Inc. Integrated clean and dry module for cleaning a substrate
KR102634959B1 (ko) * 2023-09-05 2024-02-08 주식회사 유일로보틱스 복합 비젼 검사기능을 가진 협동 로봇

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200513344A (en) * 2003-04-09 2005-04-16 Jsr Corp Abrasive pad, method and metal mold for manufacturing the same, and semiconductor wafer polishing method
US20100197200A1 (en) * 2009-01-30 2010-08-05 Konica Minolta Business Technologies, Inc. Surface abrading method of photosensitive layer of electrophotographic photoreceptor
TW201120269A (en) * 2009-10-30 2011-06-16 Kuraray Co Polishing pad and chemical mechanical polishing method
TW201622886A (zh) * 2014-09-24 2016-07-01 Toyo Tire & Rubber Co 積層硏磨墊及其製造方法

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB772599A (en) * 1954-01-23 1957-04-17 Service Eng Ltd Improvements relating to brushing machines
US6079073A (en) * 1997-04-01 2000-06-27 Ebara Corporation Washing installation including plural washers
JPH11179646A (ja) * 1997-12-19 1999-07-06 Speedfam Co Ltd 洗浄装置
JPH11283952A (ja) * 1998-03-30 1999-10-15 Shibaura Mechatronics Corp ブラシ洗浄装置
US6557202B1 (en) * 1999-12-03 2003-05-06 Lam Research Corporation Wafer scrubbing brush core having an internal motor and method of making the same
JP2002050607A (ja) * 2000-08-03 2002-02-15 Kaijo Corp 基板処理方法
US6802877B2 (en) * 2001-04-20 2004-10-12 Thomas J. Drury Polyvinyl acetal composition roller brush with abrasive outer surface
KR100562502B1 (ko) 2003-07-02 2006-03-21 삼성전자주식회사 반도체 기판의 가장자리부 처리 장치 및 방법
JP2007051234A (ja) * 2005-08-19 2007-03-01 Nisshin Shoji Kk 清浄コート剤、およびこれを用いた清浄コート用品
US20070224811A1 (en) * 2006-03-16 2007-09-27 Xinming Wang Substrate processing method and substrate processing apparatus
JP2007294809A (ja) 2006-04-27 2007-11-08 Sharp Corp 多孔質成長基板クリーニング装置およびシート状基板作製方法
JP4509981B2 (ja) * 2006-08-11 2010-07-21 日東電工株式会社 クリーニング部材、クリーニング機能付搬送部材、および基板処理装置のクリーニング方法
US8234739B2 (en) * 2006-10-03 2012-08-07 Xyratex Technology Limited Spiral brush for cleaning and conveying a substrate
JP3140166U (ja) 2007-12-26 2008-03-13 宮川ローラー株式会社 導電性シリコーンローラ
JP2009238938A (ja) 2008-03-26 2009-10-15 Dainippon Screen Mfg Co Ltd 基板処理装置
JP5478209B2 (ja) 2009-11-17 2014-04-23 Mipox株式会社 研磨用具及び研磨用具の製造方法
JP5535687B2 (ja) 2010-03-01 2014-07-02 株式会社荏原製作所 基板洗浄方法及び基板洗浄装置
JP5472344B2 (ja) * 2012-03-13 2014-04-16 ダイキン工業株式会社 Cmp装置
US9704729B2 (en) * 2013-06-13 2017-07-11 K.C. Tech Co., Ltd. Substrate cleaning apparatus and method and brush assembly used therein
CN111584354B (zh) 2014-04-18 2021-09-03 株式会社荏原制作所 蚀刻方法
CN107078046B (zh) 2014-10-31 2020-11-27 株式会社荏原制作所 基板清洗辊、基板清洗装置及基板清洗方法
JP6316730B2 (ja) * 2014-10-31 2018-04-25 株式会社荏原製作所 ロール部材、ペンシル部材、及びそれらの少なくともいずれか一方を含む基板処理装置
JP6726575B2 (ja) 2016-02-01 2020-07-22 株式会社Screenホールディングス 基板洗浄装置、基板処理装置、基板洗浄方法および基板処理方法
JP6643942B2 (ja) 2016-04-12 2020-02-12 株式会社荏原製作所 洗浄部材、基板洗浄装置及び基板処理装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200513344A (en) * 2003-04-09 2005-04-16 Jsr Corp Abrasive pad, method and metal mold for manufacturing the same, and semiconductor wafer polishing method
US20100197200A1 (en) * 2009-01-30 2010-08-05 Konica Minolta Business Technologies, Inc. Surface abrading method of photosensitive layer of electrophotographic photoreceptor
TW201120269A (en) * 2009-10-30 2011-06-16 Kuraray Co Polishing pad and chemical mechanical polishing method
TW201622886A (zh) * 2014-09-24 2016-07-01 Toyo Tire & Rubber Co 積層硏磨墊及其製造方法

Also Published As

Publication number Publication date
EP3608948A1 (en) 2020-02-12
SG10201907194RA (en) 2020-03-30
KR102661661B1 (ko) 2024-05-02
JP7224128B2 (ja) 2023-02-17
US11424138B2 (en) 2022-08-23
CN110828334A (zh) 2020-02-21
US20200066549A1 (en) 2020-02-27
JP2020027807A (ja) 2020-02-20
TW202017079A (zh) 2020-05-01
KR20200018279A (ko) 2020-02-19

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