TWI807553B - 包含半導體元件之記憶裝置的製造方法 - Google Patents
包含半導體元件之記憶裝置的製造方法 Download PDFInfo
- Publication number
- TWI807553B TWI807553B TW110148463A TW110148463A TWI807553B TW I807553 B TWI807553 B TW I807553B TW 110148463 A TW110148463 A TW 110148463A TW 110148463 A TW110148463 A TW 110148463A TW I807553 B TWI807553 B TW I807553B
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- Taiwan
- Prior art keywords
- conductor layer
- layer
- semiconductor
- gate
- gate conductor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 166
- 238000004519 manufacturing process Methods 0.000 title claims description 43
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 239000004020 conductor Substances 0.000 claims description 224
- 239000000463 material Substances 0.000 claims description 74
- 239000012535 impurity Substances 0.000 claims description 28
- 238000000034 method Methods 0.000 claims description 17
- 238000005530 etching Methods 0.000 claims description 14
- 230000002093 peripheral effect Effects 0.000 claims description 5
- 230000014759 maintenance of location Effects 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract description 65
- 229910052751 metal Inorganic materials 0.000 abstract description 45
- 239000002184 metal Substances 0.000 abstract description 45
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 506
- 229910052581 Si3N4 Inorganic materials 0.000 description 34
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 34
- 238000007667 floating Methods 0.000 description 33
- 238000010586 diagram Methods 0.000 description 23
- 239000003990 capacitor Substances 0.000 description 11
- 229910004298 SiO 2 Inorganic materials 0.000 description 10
- 230000007246 mechanism Effects 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- 238000001020 plasma etching Methods 0.000 description 8
- 230000008878 coupling Effects 0.000 description 7
- 238000010168 coupling process Methods 0.000 description 7
- 238000005859 coupling reaction Methods 0.000 description 7
- 239000002356 single layer Substances 0.000 description 7
- 230000008859 change Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 230000006870 function Effects 0.000 description 5
- 229910052681 coesite Inorganic materials 0.000 description 4
- 229910052906 cristobalite Inorganic materials 0.000 description 4
- 238000000280 densification Methods 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 229910052682 stishovite Inorganic materials 0.000 description 4
- 229910052905 tridymite Inorganic materials 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000009471 action Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 230000010355 oscillation Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
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- 239000002784 hot electron Substances 0.000 description 1
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- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
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- 238000011835 investigation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
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- 239000002135 nanosheet Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000008929 regeneration Effects 0.000 description 1
- 238000011069 regeneration method Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7841—Field effect transistors with field effect produced by an insulated gate with floating body, e.g. programmable transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/20—DRAM devices comprising floating-body transistors, e.g. floating-body cells
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2021/000281 WO2022149228A1 (ja) | 2021-01-07 | 2021-01-07 | 半導体素子を用いたメモリ装置の製造方法 |
| WOPCT/JP2021/000281 | 2021-01-07 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW202243133A TW202243133A (zh) | 2022-11-01 |
| TWI807553B true TWI807553B (zh) | 2023-07-01 |
Family
ID=81291692
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW110148463A TWI807553B (zh) | 2021-01-07 | 2021-12-23 | 包含半導體元件之記憶裝置的製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP7057033B1 (ja) |
| TW (1) | TWI807553B (ja) |
| WO (1) | WO2022149228A1 (ja) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP4260372A1 (en) * | 2022-03-04 | 2023-10-18 | Yangtze Memory Technologies Co., Ltd. | Three-dimensional memory devices and fabricating methods thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200703624A (en) * | 2005-07-01 | 2007-01-16 | Nanya Technology Corp | Method of fabricating dynamic random access memory and array of the same |
| TW200937623A (en) * | 2008-01-29 | 2009-09-01 | Unisantis Electronics Jp Ltd | Semiconductor storage device |
| US20180175047A1 (en) * | 2014-09-05 | 2018-06-21 | Unisantis Electronics Singapore Pte. Ltd. | Semiconductor device |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3898715B2 (ja) * | 2004-09-09 | 2007-03-28 | 株式会社東芝 | 半導体装置およびその製造方法 |
| JP4791986B2 (ja) * | 2007-03-01 | 2011-10-12 | 株式会社東芝 | 半導体記憶装置 |
-
2021
- 2021-01-07 JP JP2021525269A patent/JP7057033B1/ja active Active
- 2021-01-07 WO PCT/JP2021/000281 patent/WO2022149228A1/ja active Application Filing
- 2021-12-23 TW TW110148463A patent/TWI807553B/zh active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200703624A (en) * | 2005-07-01 | 2007-01-16 | Nanya Technology Corp | Method of fabricating dynamic random access memory and array of the same |
| TW200937623A (en) * | 2008-01-29 | 2009-09-01 | Unisantis Electronics Jp Ltd | Semiconductor storage device |
| US20180175047A1 (en) * | 2014-09-05 | 2018-06-21 | Unisantis Electronics Singapore Pte. Ltd. | Semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPWO2022149228A1 (ja) | 2022-07-14 |
| JP7057033B1 (ja) | 2022-04-19 |
| TW202243133A (zh) | 2022-11-01 |
| WO2022149228A1 (ja) | 2022-07-14 |
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