JPWO2022149228A1 - - Google Patents

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Publication number
JPWO2022149228A1
JPWO2022149228A1 JP2021525269A JP2021525269A JPWO2022149228A1 JP WO2022149228 A1 JPWO2022149228 A1 JP WO2022149228A1 JP 2021525269 A JP2021525269 A JP 2021525269A JP 2021525269 A JP2021525269 A JP 2021525269A JP WO2022149228 A1 JPWO2022149228 A1 JP WO2022149228A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2021525269A
Other versions
JP7057033B1 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Application granted granted Critical
Publication of JP7057033B1 publication Critical patent/JP7057033B1/ja
Publication of JPWO2022149228A1 publication Critical patent/JPWO2022149228A1/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7841—Field effect transistors with field effect produced by an insulated gate with floating body, e.g. programmable transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/20—DRAM devices comprising floating-body transistors, e.g. floating-body cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
JP2021525269A 2021-01-07 2021-01-07 半導体素子を用いたメモリ装置の製造方法 Active JP7057033B1 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2021/000281 WO2022149228A1 (ja) 2021-01-07 2021-01-07 半導体素子を用いたメモリ装置の製造方法

Publications (2)

Publication Number Publication Date
JP7057033B1 JP7057033B1 (ja) 2022-04-19
JPWO2022149228A1 true JPWO2022149228A1 (ja) 2022-07-14

Family

ID=81291692

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021525269A Active JP7057033B1 (ja) 2021-01-07 2021-01-07 半導体素子を用いたメモリ装置の製造方法

Country Status (3)

Country Link
JP (1) JP7057033B1 (ja)
TW (1) TWI807553B (ja)
WO (1) WO2022149228A1 (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117652215A (zh) * 2022-03-04 2024-03-05 长江存储科技有限责任公司 三维存储装置及其制造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3898715B2 (ja) * 2004-09-09 2007-03-28 株式会社東芝 半導体装置およびその製造方法
TWI278100B (en) * 2005-07-01 2007-04-01 Nanya Technology Corp Method of fabricating dynamic random access memory and array of the same
JP4791986B2 (ja) * 2007-03-01 2011-10-12 株式会社東芝 半導体記憶装置
WO2009095998A1 (ja) * 2008-01-29 2009-08-06 Unisantis Electronics (Japan) Ltd. 半導体記憶装置
JP6065190B2 (ja) * 2014-09-05 2017-01-25 ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． 半導体装置

Also Published As

Publication number Publication date
WO2022149228A1 (ja) 2022-07-14
JP7057033B1 (ja) 2022-04-19
TW202243133A (zh) 2022-11-01
TWI807553B (zh) 2023-07-01

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