TWI800654B - 晶圓的加工方法 - Google Patents

晶圓的加工方法 Download PDF

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Publication number
TWI800654B
TWI800654B TW108118539A TW108118539A TWI800654B TW I800654 B TWI800654 B TW I800654B TW 108118539 A TW108118539 A TW 108118539A TW 108118539 A TW108118539 A TW 108118539A TW I800654 B TWI800654 B TW I800654B
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Taiwan
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processing method
wafer processing
wafer
processing
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TW108118539A
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TW202002050A (zh
Inventor
原田成規
松澤稔
木內逸人
淀良彰
荒川太朗
上里昌充
河村慧美子
藤井祐介
宮井俊輝
大前卷子
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日商迪思科股份有限公司
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836Wafer tapes, e.g. grinding or dicing support tapes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36Removing material
    • B23K26/362Laser etching
    • B23K26/364Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36Removing material
    • B23K26/40Removing material taking account of the properties of the material involved
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    • C09J123/00Adhesives based on homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Adhesives based on derivatives of such polymers
    • C09J123/02Adhesives based on homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Adhesives based on derivatives of such polymers not modified by chemical after-treatment
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    • C09J123/02Adhesives based on homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Adhesives based on derivatives of such polymers not modified by chemical after-treatment
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    • C09J5/00Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers
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    • C09J7/20Adhesives in the form of films or foils characterised by their carriers
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    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3043Making grooves, e.g. cutting
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    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
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    • C09J2203/326Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
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    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
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    • H01L2221/68381Details of chemical or physical process used for separating the auxiliary support from a device or wafer
TW108118539A 2018-06-06 2019-05-29 晶圓的加工方法 TWI800654B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018-108417 2018-06-06
JP2018108417A JP7154686B2 (ja) 2018-06-06 2018-06-06 ウェーハの加工方法

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TW202002050A TW202002050A (zh) 2020-01-01
TWI800654B true TWI800654B (zh) 2023-05-01

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US (1) US11127633B2 (zh)
JP (1) JP7154686B2 (zh)
KR (1) KR20190139142A (zh)
CN (1) CN110571191B (zh)
DE (1) DE102019208260A1 (zh)
MY (1) MY192243A (zh)
SG (1) SG10201904699RA (zh)
TW (1) TWI800654B (zh)

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Publication number Priority date Publication date Assignee Title
JP7281873B2 (ja) 2018-05-14 2023-05-26 株式会社ディスコ ウェーハの加工方法
JP7201342B2 (ja) 2018-06-06 2023-01-10 株式会社ディスコ ウエーハの加工方法
JP2019220550A (ja) * 2018-06-19 2019-12-26 株式会社ディスコ ウエーハの加工方法
JP7166718B2 (ja) * 2018-10-17 2022-11-08 株式会社ディスコ ウェーハの加工方法
JP7461118B2 (ja) * 2019-08-19 2024-04-03 株式会社ディスコ ウエーハの加工方法
JP7430515B2 (ja) * 2019-11-06 2024-02-13 株式会社ディスコ ウエーハの処理方法
JP7408237B2 (ja) 2020-01-16 2024-01-05 株式会社ディスコ ウェーハの加工方法
JP2023019193A (ja) * 2021-07-28 2023-02-09 株式会社ディスコ 被加工物の加工方法

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US20040089515A1 (en) * 2002-11-11 2004-05-13 Cheol-Joon Yoo Method and apparatus for picking up a semiconductor chip, method and apparatus for removing a semiconductor chip from a dicing tape, and a method of forming a perforated dicing tape
TW200415754A (en) * 2002-10-25 2004-08-16 Renesas Tech Corp Fabrication method of semiconductor integrated circuit device
CN201546235U (zh) * 2009-08-03 2010-08-11 上海核工程研究设计院 带闭锁功能的核电厂核岛结构基础隔震装置
TW201440134A (zh) * 2013-02-11 2014-10-16 Henkel IP & Holding GmbH 作爲切割膠帶黏著劑之晶圓背部塗層
TW201629141A (zh) * 2014-11-19 2016-08-16 住友電木股份有限公司 切割膜片
TW201742132A (zh) * 2016-05-12 2017-12-01 住友電木股份有限公司 半導體基板加工用黏著膠帶

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JPH0637169A (ja) * 1992-07-16 1994-02-10 Hitachi Ltd 半導体製造装置におけるペレット突き上げ機構
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