TWI799604B - 工件加工方法 - Google Patents

工件加工方法 Download PDF

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Publication number
TWI799604B
TWI799604B TW108121271A TW108121271A TWI799604B TW I799604 B TWI799604 B TW I799604B TW 108121271 A TW108121271 A TW 108121271A TW 108121271 A TW108121271 A TW 108121271A TW I799604 B TWI799604 B TW I799604B
Authority
TW
Taiwan
Prior art keywords
processing method
workpiece processing
workpiece
processing
Prior art date
Application number
TW108121271A
Other languages
English (en)
Other versions
TW202002093A (zh
Inventor
成田義智
Original Assignee
日商迪思科股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商迪思科股份有限公司 filed Critical 日商迪思科股份有限公司
Publication of TW202002093A publication Critical patent/TW202002093A/zh
Application granted granted Critical
Publication of TWI799604B publication Critical patent/TWI799604B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02013—Grinding, lapping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02021—Edge treatment, chamfering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Grinding Of Cylindrical And Plane Surfaces (AREA)
  • Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
TW108121271A 2018-06-22 2019-06-19 工件加工方法 TWI799604B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018118692A JP7068064B2 (ja) 2018-06-22 2018-06-22 被加工物の加工方法
JP2018-118692 2018-06-22

Publications (2)

Publication Number Publication Date
TW202002093A TW202002093A (zh) 2020-01-01
TWI799604B true TWI799604B (zh) 2023-04-21

Family

ID=68968867

Family Applications (1)

Application Number Title Priority Date Filing Date
TW108121271A TWI799604B (zh) 2018-06-22 2019-06-19 工件加工方法

Country Status (4)

Country Link
JP (1) JP7068064B2 (zh)
KR (1) KR20200000337A (zh)
CN (1) CN110634736B (zh)
TW (1) TWI799604B (zh)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111403315B (zh) * 2020-03-03 2022-03-18 上海华力集成电路制造有限公司 晶圆切边装置和方法
USD969050S1 (en) * 2020-12-03 2022-11-08 Ralph Preston Kirtland Vehicle bumper brace
JP2022139624A (ja) 2021-03-12 2022-09-26 株式会社ディスコ 加工装置及び加工方法
CN115132568A (zh) * 2021-03-25 2022-09-30 三美电机株式会社 半导体装置的制造方法
CN113510609B (zh) * 2021-07-12 2023-09-08 长鑫存储技术有限公司 晶圆以及晶圆的处理方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6004405A (en) * 1997-03-11 1999-12-21 Super Silicon Crystal Research Institute Corp. Wafer having a laser mark on chamfered edge
TW200807600A (en) * 2006-06-09 2008-02-01 Disco Corp Sensing mechanism for crystal orientation indication mark of semiconductor wafer
TW200935575A (en) * 2007-09-04 2009-08-16 Disco Corp Wafer
JP2013115187A (ja) * 2011-11-28 2013-06-10 Disco Abrasive Syst Ltd ウェーハの加工方法
TWI496205B (zh) * 2009-04-15 2015-08-11 Daito Electron Co Ltd 晶圓斜角加工方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4354769B2 (ja) * 2003-09-19 2009-10-28 株式会社ディスコ ウェーハの研磨方法
JP5343400B2 (ja) * 2008-05-22 2013-11-13 株式会社Ｓｕｍｃｏ 半導体ウェーハの製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6004405A (en) * 1997-03-11 1999-12-21 Super Silicon Crystal Research Institute Corp. Wafer having a laser mark on chamfered edge
TW200807600A (en) * 2006-06-09 2008-02-01 Disco Corp Sensing mechanism for crystal orientation indication mark of semiconductor wafer
TW200935575A (en) * 2007-09-04 2009-08-16 Disco Corp Wafer
TWI496205B (zh) * 2009-04-15 2015-08-11 Daito Electron Co Ltd 晶圓斜角加工方法
JP2013115187A (ja) * 2011-11-28 2013-06-10 Disco Abrasive Syst Ltd ウェーハの加工方法

Also Published As

Publication number Publication date
JP7068064B2 (ja) 2022-05-16
CN110634736B (zh) 2023-08-04
KR20200000337A (ko) 2020-01-02
CN110634736A (zh) 2019-12-31
TW202002093A (zh) 2020-01-01
JP2019220632A (ja) 2019-12-26

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