JP2017534145A5 - ワークピース処理方法およびシステム - Google Patents

ワークピース処理方法およびシステム Download PDF

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Publication number
JP2017534145A5
JP2017534145A5 JP2017519523A JP2017519523A JP2017534145A5 JP 2017534145 A5 JP2017534145 A5 JP 2017534145A5 JP 2017519523 A JP2017519523 A JP 2017519523A JP 2017519523 A JP2017519523 A JP 2017519523A JP 2017534145 A5 JP2017534145 A5 JP 2017534145A5
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Prior art keywords
processing method
workpiece processing
workpiece
processing
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JP2017519523A
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JP2017534145A (ja
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Priority claimed from US14/878,519 external-priority patent/US20160111254A1/en
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Publication of JP2017534145A publication Critical patent/JP2017534145A/ja
Publication of JP2017534145A5 publication Critical patent/JP2017534145A5/ja
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JP2017519523A 2014-10-16 2015-10-09 ワークピース処理方法および装置 Pending JP2017534145A (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201462064740P 2014-10-16 2014-10-16
US62/064,740 2014-10-16
US14/878,519 US20160111254A1 (en) 2014-10-16 2015-10-08 Workpiece Processing Method And Apparatus
US14/878,519 2015-10-08
PCT/US2015/054892 WO2016060952A1 (en) 2014-10-16 2015-10-09 Workpiece processing method and apparatus

Publications (2)

Publication Number Publication Date
JP2017534145A JP2017534145A (ja) 2017-11-16
JP2017534145A5 true JP2017534145A5 (ja) 2018-10-04

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JP2017519523A Pending JP2017534145A (ja) 2014-10-16 2015-10-09 ワークピース処理方法および装置

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US (1) US20160111254A1 (ja)
JP (1) JP2017534145A (ja)
KR (1) KR20170070162A (ja)
CN (1) CN107075662B (ja)
TW (1) TWI697936B (ja)
WO (1) WO2016060952A1 (ja)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7078632B2 (ja) 2017-01-09 2022-05-31 ティーイーエル エピオン インコーポレイテッド 補償位置特定処理装置および方法
US10795173B2 (en) * 2018-07-13 2020-10-06 Varian Semiconductor Equipment Associates, Inc. System and method for optimally forming gratings of diffracted optical elements
CA3120208A1 (en) * 2018-11-21 2020-05-28 Techinsights Inc. Ion beam delayering system and method, topographically enhanced delayered sample produced thereby, and imaging methods and systems related thereto
US10714296B2 (en) * 2018-12-12 2020-07-14 Axcelis Technologies, Inc. Ion source with tailored extraction shape
US11646213B2 (en) * 2020-05-04 2023-05-09 Applied Materials, Inc. Multi-zone platen temperature control
CN111339693B (zh) * 2020-05-19 2020-10-13 深圳市乾行达科技有限公司 一种工件的蚀刻方法、装置及终端设备
US11664193B2 (en) * 2021-02-04 2023-05-30 Applied Materials, Inc. Temperature controlled/electrically biased wafer surround

Family Cites Families (16)

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Publication number Priority date Publication date Assignee Title
US5811823A (en) * 1996-02-16 1998-09-22 Eaton Corporation Control mechanisms for dosimetry control in ion implantation systems
US6710360B2 (en) * 2002-07-10 2004-03-23 Axcelis Technologies, Inc. Adjustable implantation angle workpiece support structure for an ion beam implanter
US7982195B2 (en) * 2004-09-14 2011-07-19 Axcelis Technologies, Inc. Controlled dose ion implantation
US20060240651A1 (en) * 2005-04-26 2006-10-26 Varian Semiconductor Equipment Associates, Inc. Methods and apparatus for adjusting ion implant parameters for improved process control
US7544957B2 (en) * 2006-05-26 2009-06-09 Varian Semiconductor Equipment Associates, Inc. Non-uniform ion implantation
JP2008117688A (ja) * 2006-11-07 2008-05-22 Fujifilm Corp イオン注入装置及びウエハ
US7807983B2 (en) * 2007-01-12 2010-10-05 Varian Semiconductor Equipment Associates, Inc. Technique for reducing magnetic fields at an implant location
JP4917457B2 (ja) * 2007-03-09 2012-04-18 富士通株式会社 漁獲証明処理方法，処理装置，処理プログラム，および処理システム
US7820988B2 (en) * 2008-10-02 2010-10-26 Varian Semiconductor Equipment Associates, Inc. Implant uniformity control
US8237136B2 (en) * 2009-10-08 2012-08-07 Tel Epion Inc. Method and system for tilting a substrate during gas cluster ion beam processing
US20120056107A1 (en) * 2010-09-08 2012-03-08 Varian Semiconductor Equipment Associates, Inc. Uniformity control using ion beam blockers
JP5211328B2 (ja) * 2011-02-02 2013-06-12 日新イオン機器株式会社 イオン注入方法およびイオン注入装置
US8907307B2 (en) * 2011-03-11 2014-12-09 Varian Semiconductor Equipment Associates, Inc. Apparatus and method for maskless patterned implantation
US20130250293A1 (en) * 2012-03-20 2013-09-26 Fei Company Method and Apparatus for Actively Monitoring an Inductively-Coupled Plasma Ion Source using an Optical Spectrometer
JP5856543B2 (ja) * 2012-06-27 2016-02-09 東京エレクトロン株式会社 エッチング方法
US8907300B2 (en) * 2013-03-14 2014-12-09 Varian Semiconductor Equipment Associates, Inc. System and method for plasma control using boundary electrode

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