JP2017534145A - ワークピース処理方法および装置 - Google Patents
ワークピース処理方法および装置 Download PDFInfo
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- 238000003672 processing method Methods 0.000 title 1
- 238000010884 ion-beam technique Methods 0.000 claims abstract description 85
- 238000000605 extraction Methods 0.000 claims abstract description 71
- 238000000034 method Methods 0.000 claims abstract description 58
- 238000012545 processing Methods 0.000 claims abstract description 52
- 238000005530 etching Methods 0.000 claims description 21
- 230000008859 change Effects 0.000 claims description 11
- 238000004891 communication Methods 0.000 claims description 10
- 238000013519 translation Methods 0.000 claims description 2
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- 150000002500 ions Chemical class 0.000 description 18
- 238000005280 amorphization Methods 0.000 description 7
- 239000000945 filler Substances 0.000 description 6
- 238000002513 implantation Methods 0.000 description 6
- 230000008021 deposition Effects 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 230000004044 response Effects 0.000 description 4
- 238000004088 simulation Methods 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000001965 increasing effect Effects 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/221—Ion beam deposition
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/48—Ion implantation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32412—Plasma immersion ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32733—Means for moving the material to be treated
- H01J37/32752—Means for moving the material to be treated for moving the material across the discharge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/336—Changing physical properties of treated surfaces
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/336—Changing physical properties of treated surfaces
- H01J2237/3365—Plasma source implantation
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- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Physical Vapour Deposition (AREA)
- Plasma Technology (AREA)
Abstract
Description
Claims (15)
- プラズマチャンバを用いてワークピースを処理する方法であって、
前記プラズマチャンバの抽出アパーチャを通じてリボンイオンビームを抽出するステップと、
前記ワークピースの異なる部分が前記リボンイオンビームに露出するように、前記ワークピースを前記プラズマチャンバに対して平行移動させるステップと、
前記ワークピースが平行移動されている間、前記プラズマチャンバの少なくとも1つのパラメータを変化させるステップと、
を有する、方法。 - 前記ワークピースの少なくともいくつかの部分が前記リボンイオンビームに露出した後、前記ワークピースを回転させるステップと、
前記平行移動、変化、および回転を複数回繰り返して所望パターンを実現するステップと、
をさらに有する、請求項1に記載の方法。 - 抽出電圧が前記プラズマチャンバの壁に印加され、
前記少なくとも1つのパラメータは、前記抽出電圧のデューティサイクルを含む、
請求項1に記載の方法。 - 前記少なくとも1つのパラメータは、前記リボンイオンビームの形状を含み、
前記リボンイオンビームの形状は、機械的ブロッカー、電磁石、または電極によって変化される、
請求項1に記載の方法。 - 前記少なくとも1つのパラメータは、前記リボンイオンビームの入射角度を含む、
請求項1に記載の方法。 - 前記少なくとも1つのパラメータは、前記ワークピースが前記プラズマチャンバに対して平行移動される速度を含む、
請求項1に記載の方法。 - 不均一厚さを有するワークピースをエッチングする方法であって、
前記不均一厚さを除去するエッチングパターンを決定するステップと、
プラズマチャンバから抽出されたリボンイオンビームを用いて、前記ワークピースに前記エッチングパターンを施すステップと、
を有する、方法。 - 前記ワークピースの異なる部分を露出させるように前記ワークピースを前記リボンイオンビームに対して平行移動させ、前記ワークピースが平行移動されるにつれて前記プラズマチャンバに関連するパラメータを変化させる、
請求項7に記載の方法。 - 前記ワークピースを前記リボンイオンビームに複数回露出させて、各露出後に回転させる、
請求項8に記載の方法。 - ワークピースを処理するシステムであって、
抽出アパーチャを有するプラズマチャンバであって、該抽出アパーチャからリボンイオンビームが抽出される、プラズマチャンバと、
前記抽出アパーチャの近くを通過するようにワークピースが配置される可動面と、
コントローラと、
を備え、
前記コントローラは、前記ワークピースが抽出アパーチャを通過している間、前記プラズマチャンバの1つ以上のパラメータを変化させるように構成される、
システム。 - 抽出電圧を供給するために前記プラズマチャンバの壁と連通ている抽出電圧電源をさらに備え、
前記コントローラは、前記抽出電圧のデューティサイクルを変化させる、
請求項10に記載のシステム。 - 前記コントローラは、前記リボンイオンビームの形状または入射角度を変化させる、
請求項10に記載のシステム。 - 前記抽出アパーチャに近接して配置されるブロッカーと、
前記ブロッカーを動かすように前記ブロッカーと通 信しているアクチュエータと、
をさらに備え、
前記コントローラは、前記アクチュエータと通 信している、
請求項12に記載のシステム。 - 前記プラズマチャンバの壁に近接して配置される電磁石をさらに備え、
前記コントローラは、前記電磁石と通 信している、
請求項12に記載のシステム。 - 前記可動面の速度を調整するアクチュエータをさらに備え、
前記コントローラは、前記可動面の速度を変化させるように前記アクチュエータと通 信している、
請求項10に記載のシステム。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201462064740P | 2014-10-16 | 2014-10-16 | |
US62/064,740 | 2014-10-16 | ||
US14/878,519 US20160111254A1 (en) | 2014-10-16 | 2015-10-08 | Workpiece Processing Method And Apparatus |
US14/878,519 | 2015-10-08 | ||
PCT/US2015/054892 WO2016060952A1 (en) | 2014-10-16 | 2015-10-09 | Workpiece processing method and apparatus |
Publications (2)
Publication Number | Publication Date |
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JP2017534145A true JP2017534145A (ja) | 2017-11-16 |
JP2017534145A5 JP2017534145A5 (ja) | 2018-10-04 |
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JP2017519523A Pending JP2017534145A (ja) | 2014-10-16 | 2015-10-09 | ワークピース処理方法および装置 |
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Country | Link |
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US (1) | US20160111254A1 (ja) |
JP (1) | JP2017534145A (ja) |
KR (1) | KR20170070162A (ja) |
CN (1) | CN107075662B (ja) |
TW (1) | TWI697936B (ja) |
WO (1) | WO2016060952A1 (ja) |
Cited By (1)
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JP2021532397A (ja) * | 2018-07-13 | 2021-11-25 | バリアン・セミコンダクター・エクイップメント・アソシエイツ・インコーポレイテッド | 回折光学素子の格子を最適に形成するためのシステム及び方法 |
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KR102490143B1 (ko) | 2017-01-09 | 2023-01-18 | 텔 에피온 인크 | 보상된 위치에 따른 처리 장치 및 방법 |
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US10714296B2 (en) * | 2018-12-12 | 2020-07-14 | Axcelis Technologies, Inc. | Ion source with tailored extraction shape |
US11646213B2 (en) * | 2020-05-04 | 2023-05-09 | Applied Materials, Inc. | Multi-zone platen temperature control |
CN111339693B (zh) * | 2020-05-19 | 2020-10-13 | 深圳市乾行达科技有限公司 | 一种工件的蚀刻方法、装置及终端设备 |
US11664193B2 (en) * | 2021-02-04 | 2023-05-30 | Applied Materials, Inc. | Temperature controlled/electrically biased wafer surround |
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2015
- 2015-10-08 US US14/878,519 patent/US20160111254A1/en not_active Abandoned
- 2015-10-09 KR KR1020177012983A patent/KR20170070162A/ko not_active Application Discontinuation
- 2015-10-09 CN CN201580055294.0A patent/CN107075662B/zh active Active
- 2015-10-09 WO PCT/US2015/054892 patent/WO2016060952A1/en active Application Filing
- 2015-10-09 JP JP2017519523A patent/JP2017534145A/ja active Pending
- 2015-10-15 TW TW104133785A patent/TWI697936B/zh active
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Also Published As
Publication number | Publication date |
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KR20170070162A (ko) | 2017-06-21 |
CN107075662B (zh) | 2019-12-03 |
US20160111254A1 (en) | 2016-04-21 |
WO2016060952A1 (en) | 2016-04-21 |
TWI697936B (zh) | 2020-07-01 |
CN107075662A (zh) | 2017-08-18 |
TW201630025A (zh) | 2016-08-16 |
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