SG10201904699RA - Wafer processing method - Google Patents
Wafer processing methodInfo
- Publication number
- SG10201904699RA SG10201904699RA SG10201904699RA SG10201904699RA SG10201904699RA SG 10201904699R A SG10201904699R A SG 10201904699RA SG 10201904699R A SG10201904699R A SG 10201904699RA SG 10201904699R A SG10201904699R A SG 10201904699RA SG 10201904699R A SG10201904699R A SG 10201904699RA
- Authority
- SG
- Singapore
- Prior art keywords
- processing method
- wafer processing
- wafer
- processing
- Prior art date
Links
- 238000003672 processing method Methods 0.000 title 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/362—Laser etching
- B23K26/364—Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J123/00—Adhesives based on homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Adhesives based on derivatives of such polymers
- C09J123/02—Adhesives based on homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Adhesives based on derivatives of such polymers not modified by chemical after-treatment
- C09J123/04—Homopolymers or copolymers of ethene
- C09J123/06—Polyethene
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J123/00—Adhesives based on homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Adhesives based on derivatives of such polymers
- C09J123/02—Adhesives based on homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Adhesives based on derivatives of such polymers not modified by chemical after-treatment
- C09J123/10—Homopolymers or copolymers of propene
- C09J123/12—Polypropene
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J125/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring; Adhesives based on derivatives of such polymers
- C09J125/02—Homopolymers or copolymers of hydrocarbons
- C09J125/04—Homopolymers or copolymers of styrene
- C09J125/06—Polystyrene
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J5/00—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers
- C09J5/06—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers involving heating of the applied adhesive
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
- C09J7/22—Plastics; Metallised plastics
- C09J7/24—Plastics; Metallised plastics based on macromolecular compounds obtained by reactions involving only carbon-to-carbon unsaturated bonds
- C09J7/241—Polyolefin, e.g.rubber
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- H—ELECTRICITY
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
- H01L21/3043—Making grooves, e.g. cutting
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
- H01L21/67712—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations the substrate being handled substantially vertically
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
- H01L21/67721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations the substrates to be conveyed not being semiconductor wafers or large planar substrates, e.g. chips, lead frames
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
- C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
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- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
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- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
- H01L2221/68336—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding involving stretching of the auxiliary support post dicing
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- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
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- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Optics & Photonics (AREA)
- Mechanical Engineering (AREA)
- Plasma & Fusion (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Dicing (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018108417A JP7154686B2 (ja) | 2018-06-06 | 2018-06-06 | ウェーハの加工方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201904699RA true SG10201904699RA (en) | 2020-01-30 |
Family
ID=68651934
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201904699RA SG10201904699RA (en) | 2018-06-06 | 2019-05-24 | Wafer processing method |
Country Status (8)
Country | Link |
---|---|
US (1) | US11127633B2 (zh) |
JP (1) | JP7154686B2 (zh) |
KR (1) | KR20190139142A (zh) |
CN (1) | CN110571191B (zh) |
DE (1) | DE102019208260A1 (zh) |
MY (1) | MY192243A (zh) |
SG (1) | SG10201904699RA (zh) |
TW (1) | TWI800654B (zh) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7281873B2 (ja) | 2018-05-14 | 2023-05-26 | 株式会社ディスコ | ウェーハの加工方法 |
JP7201342B2 (ja) | 2018-06-06 | 2023-01-10 | 株式会社ディスコ | ウエーハの加工方法 |
JP2019220550A (ja) * | 2018-06-19 | 2019-12-26 | 株式会社ディスコ | ウエーハの加工方法 |
JP7166718B2 (ja) * | 2018-10-17 | 2022-11-08 | 株式会社ディスコ | ウェーハの加工方法 |
JP7461118B2 (ja) * | 2019-08-19 | 2024-04-03 | 株式会社ディスコ | ウエーハの加工方法 |
JP7430515B2 (ja) * | 2019-11-06 | 2024-02-13 | 株式会社ディスコ | ウエーハの処理方法 |
JP7408237B2 (ja) * | 2020-01-16 | 2024-01-05 | 株式会社ディスコ | ウェーハの加工方法 |
JP2023019193A (ja) * | 2021-07-28 | 2023-02-09 | 株式会社ディスコ | 被加工物の加工方法 |
Family Cites Families (37)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0637169A (ja) * | 1992-07-16 | 1994-02-10 | Hitachi Ltd | 半導体製造装置におけるペレット突き上げ機構 |
JP3076179B2 (ja) | 1993-07-26 | 2000-08-14 | 株式会社ディスコ | ダイシング装置 |
JP3280876B2 (ja) * | 1996-01-22 | 2002-05-13 | 日本テキサス・インスツルメンツ株式会社 | ウェハダイシング・接着用シートおよび半導体装置の製造方法 |
KR100378094B1 (ko) | 1998-11-02 | 2003-06-02 | 앰코 테크놀로지 코리아 주식회사 | 반도체패키지의제조방법및그장치 |
JP3076179U (ja) | 2000-09-07 | 2001-03-30 | 和雄 落合 | コップ型ボトルキャップ |
JP4471563B2 (ja) * | 2002-10-25 | 2010-06-02 | 株式会社ルネサステクノロジ | 半導体装置の製造方法 |
KR100480628B1 (ko) * | 2002-11-11 | 2005-03-31 | 삼성전자주식회사 | 에어 블로잉을 이용한 칩 픽업 방법 및 장치 |
US6890836B2 (en) * | 2003-05-23 | 2005-05-10 | Texas Instruments Incorporated | Scribe street width reduction by deep trench and shallow saw cut |
JP2005191297A (ja) | 2003-12-25 | 2005-07-14 | Jsr Corp | ダイシングフィルム及び半導体ウェハの切断方法 |
JP2005222988A (ja) * | 2004-02-03 | 2005-08-18 | Disco Abrasive Syst Ltd | ウエーハの分割方法 |
JP4647228B2 (ja) * | 2004-04-01 | 2011-03-09 | 株式会社ディスコ | ウェーハの加工方法 |
JP2006187862A (ja) | 2006-03-07 | 2006-07-20 | Lintec Corp | 切断装置及び切断方法 |
FI20060256L (fi) * | 2006-03-17 | 2006-03-20 | Imbera Electronics Oy | Piirilevyn valmistaminen ja komponentin sisältävä piirilevy |
JP2008117943A (ja) * | 2006-11-06 | 2008-05-22 | Nitto Denko Corp | ウォータージェットレーザダイシング用粘着シート |
JP5047838B2 (ja) | 2008-02-26 | 2012-10-10 | 株式会社ディスコ | テープ貼り機 |
JP5415732B2 (ja) | 2008-09-17 | 2014-02-12 | リンテック株式会社 | 表面保護用シート |
JP2011003757A (ja) * | 2009-06-19 | 2011-01-06 | Disco Abrasive Syst Ltd | ウエーハの分割方法 |
CN201546235U (zh) * | 2009-08-03 | 2010-08-11 | 上海核工程研究设计院 | 带闭锁功能的核电厂核岛结构基础隔震装置 |
JP5495695B2 (ja) | 2009-09-30 | 2014-05-21 | 株式会社ディスコ | ウエーハの加工方法 |
WO2011067991A1 (ja) * | 2009-12-02 | 2011-06-09 | シャープ株式会社 | 半導体装置およびその製造方法、表示装置 |
US9559004B2 (en) * | 2011-05-12 | 2017-01-31 | STATS ChipPAC Pte. Ltd. | Semiconductor device and method of singulating thin semiconductor wafer on carrier along modified region within non-active region formed by irradiating energy |
WO2013021644A1 (ja) | 2011-08-09 | 2013-02-14 | 三井化学株式会社 | 半導体装置の製造方法およびその方法に用いられる半導体ウエハ表面保護用フィルム |
CN108155142B (zh) | 2011-09-30 | 2022-05-03 | 琳得科株式会社 | 具有保护膜形成层的切割膜片和芯片的制造方法 |
US9230888B2 (en) * | 2013-02-11 | 2016-01-05 | Henkel IP & Holding GmbH | Wafer back side coating as dicing tape adhesive |
JP6054234B2 (ja) | 2013-04-22 | 2016-12-27 | 株式会社ディスコ | ウエーハの加工方法 |
JP6219196B2 (ja) | 2014-02-26 | 2017-10-25 | リンテック株式会社 | シート貼付方法および貼付装置 |
KR101596461B1 (ko) * | 2014-04-01 | 2016-02-23 | 주식회사 프로텍 | 칩 디테칭 장치 및 칩 디테칭 방법 |
JP6425435B2 (ja) | 2014-07-01 | 2018-11-21 | 株式会社ディスコ | チップ間隔維持装置 |
JP5862733B1 (ja) * | 2014-09-08 | 2016-02-16 | 富士ゼロックス株式会社 | 半導体片の製造方法 |
CN107004587A (zh) * | 2014-11-19 | 2017-08-01 | 住友电木株式会社 | 切割膜 |
JP2016207820A (ja) * | 2015-04-22 | 2016-12-08 | 株式会社ディスコ | ウエーハの加工方法 |
JP6554369B2 (ja) | 2015-09-11 | 2019-07-31 | リンテック株式会社 | 支持装置および支持方法 |
JP2017163090A (ja) | 2016-03-11 | 2017-09-14 | リンテック株式会社 | シート処理装置および処理方法 |
MY180133A (en) * | 2016-05-12 | 2020-11-23 | Sumitomo Bakelite Co | Pressure-sensitive adhesive tape for semiconductor substrate fabrication |
JP6740081B2 (ja) * | 2016-10-20 | 2020-08-12 | 株式会社ディスコ | ウエーハの加工方法 |
TWI679691B (zh) * | 2016-11-30 | 2019-12-11 | 美商帕斯馬舍門有限責任公司 | 用於電漿切割半導體晶圓的方法與設備 |
JP7084306B2 (ja) * | 2017-02-24 | 2022-06-14 | 古河電気工業株式会社 | マスク一体型表面保護テープおよびそれを用いる半導体チップの製造方法 |
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2018
- 2018-06-06 JP JP2018108417A patent/JP7154686B2/ja active Active
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2019
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- 2019-05-24 SG SG10201904699RA patent/SG10201904699RA/en unknown
- 2019-05-29 TW TW108118539A patent/TWI800654B/zh active
- 2019-06-03 CN CN201910475512.6A patent/CN110571191B/zh active Active
- 2019-06-04 KR KR1020190065793A patent/KR20190139142A/ko not_active Application Discontinuation
- 2019-06-06 DE DE102019208260.2A patent/DE102019208260A1/de active Pending
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JP7154686B2 (ja) | 2022-10-18 |
MY192243A (en) | 2022-08-10 |
CN110571191A (zh) | 2019-12-13 |
TWI800654B (zh) | 2023-05-01 |
KR20190139142A (ko) | 2019-12-17 |
DE102019208260A1 (de) | 2019-12-12 |
US20190378758A1 (en) | 2019-12-12 |
CN110571191B (zh) | 2024-03-15 |
US11127633B2 (en) | 2021-09-21 |
TW202002050A (zh) | 2020-01-01 |
JP2019212782A (ja) | 2019-12-12 |
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