TWI800332B - 用於在基板選擇側沉積的pecvd沉積系統 - Google Patents

用於在基板選擇側沉積的pecvd沉積系統 Download PDF

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TWI800332B
TWI800332B TW111111545A TW111111545A TWI800332B TW I800332 B TWI800332 B TW I800332B TW 111111545 A TW111111545 A TW 111111545A TW 111111545 A TW111111545 A TW 111111545A TW I800332 B TWI800332 B TW I800332B
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Taiwan
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deposition
substrate
pecvd
selective side
deposition system
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TW111111545A
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TW202227663A (zh
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法亞茲 謝赫
尼可 恩巴格
柯蒂斯 貝利
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美商蘭姆研究公司
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45597—Reactive back side gas
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