TWI799805B - 半導體記憶裝置 - Google Patents

半導體記憶裝置 Download PDF

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Publication number
TWI799805B
TWI799805B TW110108130A TW110108130A TWI799805B TW I799805 B TWI799805 B TW I799805B TW 110108130 A TW110108130 A TW 110108130A TW 110108130 A TW110108130 A TW 110108130A TW I799805 B TWI799805 B TW I799805B
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TW
Taiwan
Prior art keywords
memory device
semiconductor memory
semiconductor
memory
Prior art date
Application number
TW110108130A
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English (en)
Other versions
TW202226577A (zh
Inventor
大出裕之
Original Assignee
日商鎧俠股份有限公司
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Publication of TW202226577A publication Critical patent/TW202226577A/zh
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Publication of TWI799805B publication Critical patent/TWI799805B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/884—Switching materials based on at least one element of group IIIA, IVA or VA, e.g. elemental or compound semiconductors
    • H10N70/8845—Carbon or carbides
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
    • G11C5/025—Geometric lay-out considerations of storage- and peripheral-blocks in a semiconductor storage device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H10B63/84—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays
    • H10B63/845—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays the switching components being connected to a common vertical conductor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
    • G11C5/063—Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/14—Dummy cell management; Sense reference voltage generators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/528—Geometry or layout of the interconnection structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/528—Geometry or layout of the interconnection structure
    • H01L23/5283—Cross-sectional geometry
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/46—Structure, shape, material or disposition of the wire connectors prior to the connecting process of a plurality of wire connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/10—Phase change RAM [PCRAM, PRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
    • H10B63/24—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes of the Ovonic threshold switching type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Shaping switching materials
    • H10N70/063—Shaping switching materials by etching of pre-deposited switching material layers, e.g. lithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Memories (AREA)
TW110108130A 2020-09-17 2021-03-08 半導體記憶裝置 TWI799805B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020156749A JP2022050253A (ja) 2020-09-17 2020-09-17 半導体記憶装置
JP2020-156749 2020-09-17

Publications (2)

Publication Number Publication Date
TW202226577A TW202226577A (zh) 2022-07-01
TWI799805B true TWI799805B (zh) 2023-04-21

Family

ID=80628017

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110108130A TWI799805B (zh) 2020-09-17 2021-03-08 半導體記憶裝置

Country Status (4)

Country Link
US (1) US11856880B2 (zh)
JP (1) JP2022050253A (zh)
CN (1) CN114203754A (zh)
TW (1) TWI799805B (zh)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090230450A1 (en) * 2008-03-17 2009-09-17 Kabushiki Kaisha Toshiba Non-volatile semiconductor storage device
US20190164979A1 (en) * 2014-03-13 2019-05-30 Toshiba Memory Corporation Semiconductor memory
TW202010096A (zh) * 2018-08-30 2020-03-01 日商東芝記憶體股份有限公司 半導體記憶裝置
TW202011492A (zh) * 2018-09-14 2020-03-16 日商東芝記憶體股份有限公司 半導體裝置
TW202034516A (zh) * 2019-03-04 2020-09-16 日商東芝記憶體股份有限公司 半導體記憶裝置及其製造方法

Family Cites Families (17)

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JP4620942B2 (ja) * 2003-08-21 2011-01-26 川崎マイクロエレクトロニクス株式会社 半導体集積回路のレイアウト方法、そのレイアウト構造、およびフォトマスク
JP2007250705A (ja) * 2006-03-15 2007-09-27 Nec Electronics Corp 半導体集積回路装置及びダミーパターンの配置方法
US7671469B2 (en) * 2007-12-31 2010-03-02 Mediatek Inc. SiGe device with SiGe-embedded dummy pattern for alleviating micro-loading effect
JP2011018838A (ja) 2009-07-10 2011-01-27 Hitachi Ulsi Systems Co Ltd メモリセル
JP4987927B2 (ja) * 2009-09-24 2012-08-01 株式会社東芝 半導体記憶装置
JP5551409B2 (ja) * 2009-10-23 2014-07-16 ルネサスエレクトロニクス株式会社 半導体装置の設計方法、設計装置、設計プログラム及び半導体装置
JP5667893B2 (ja) * 2011-01-20 2015-02-12 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US8928110B2 (en) * 2011-09-09 2015-01-06 United Microelectronics Corp. Dummy cell pattern for improving device thermal uniformity
JP5606479B2 (ja) * 2012-03-22 2014-10-15 株式会社東芝 半導体記憶装置
US9147029B2 (en) * 2013-03-11 2015-09-29 Taiwan Semiconductor Manufacturing Company, Ltd. Stretch dummy cell insertion in FinFET process
JP6262060B2 (ja) * 2014-04-03 2018-01-17 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US9691473B2 (en) * 2015-09-22 2017-06-27 Sandisk Technologies Llc Adaptive operation of 3D memory
US20170365675A1 (en) * 2016-06-16 2017-12-21 United Microelectronics Corp. Dummy pattern arrangement and method of arranging dummy patterns
US10204202B2 (en) * 2016-06-29 2019-02-12 Taiwan Semiconductor Manufacturing Co., Ltd. Dummy fin cell placement in an integrated circuit layout
US10153265B1 (en) * 2017-08-21 2018-12-11 United Microelectronics Corp. Dummy cell arrangement and method of arranging dummy cells
US10878928B2 (en) * 2018-09-21 2020-12-29 Taiwan Semiconductor Manufacturing Co., Ltd. One-time-programmable (OTP) implementation using magnetic junctions
JP2020149736A (ja) * 2019-03-11 2020-09-17 キオクシア株式会社 半導体記憶装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090230450A1 (en) * 2008-03-17 2009-09-17 Kabushiki Kaisha Toshiba Non-volatile semiconductor storage device
US20190164979A1 (en) * 2014-03-13 2019-05-30 Toshiba Memory Corporation Semiconductor memory
TW202010096A (zh) * 2018-08-30 2020-03-01 日商東芝記憶體股份有限公司 半導體記憶裝置
TW202011492A (zh) * 2018-09-14 2020-03-16 日商東芝記憶體股份有限公司 半導體裝置
TW202034516A (zh) * 2019-03-04 2020-09-16 日商東芝記憶體股份有限公司 半導體記憶裝置及其製造方法

Also Published As

Publication number Publication date
TW202226577A (zh) 2022-07-01
JP2022050253A (ja) 2022-03-30
US11856880B2 (en) 2023-12-26
CN114203754A (zh) 2022-03-18
US20220085291A1 (en) 2022-03-17

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