TWI800833B - 半導體記憶裝置 - Google Patents

半導體記憶裝置 Download PDF

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Publication number
TWI800833B
TWI800833B TW110117861A TW110117861A TWI800833B TW I800833 B TWI800833 B TW I800833B TW 110117861 A TW110117861 A TW 110117861A TW 110117861 A TW110117861 A TW 110117861A TW I800833 B TWI800833 B TW I800833B
Authority
TW
Taiwan
Prior art keywords
memory device
semiconductor memory
semiconductor
memory
Prior art date
Application number
TW110117861A
Other languages
English (en)
Other versions
TW202209647A (zh
Inventor
梶原鈴加
黒田寿文
Original Assignee
日商鎧俠股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商鎧俠股份有限公司 filed Critical 日商鎧俠股份有限公司
Publication of TW202209647A publication Critical patent/TW202209647A/zh
Application granted granted Critical
Publication of TWI800833B publication Critical patent/TWI800833B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels
    • H10B41/23—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
    • H10B41/27—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
    • H01L29/7926—Vertical transistors, i.e. transistors having source and drain not in the same horizontal plane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
    • H10B43/35—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region with cell select transistors, e.g. NAND
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/401—Multistep manufacturing processes
    • H01L29/4011—Multistep manufacturing processes for data storage electrodes
    • H01L29/40117—Multistep manufacturing processes for data storage electrodes the electrodes comprising a charge-trapping insulator
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/10—EEPROM devices comprising charge-trapping gate insulators characterised by the top-view layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels
    • H10B43/23—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
    • H10B43/27—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/50—EEPROM devices comprising charge-trapping gate insulators characterised by the boundary region between the core and peripheral circuit regions
TW110117861A 2020-08-24 2021-05-18 半導體記憶裝置 TWI800833B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2020141080A JP2022036723A (ja) 2020-08-24 2020-08-24 半導体記憶装置
JP2020-141080 2020-08-24
US17/191,206 2021-03-03
US17/191,206 US20220059557A1 (en) 2020-08-24 2021-03-03 Semiconductor storage device

Publications (2)

Publication Number Publication Date
TW202209647A TW202209647A (zh) 2022-03-01
TWI800833B true TWI800833B (zh) 2023-05-01

Family

ID=80269875

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110117861A TWI800833B (zh) 2020-08-24 2021-05-18 半導體記憶裝置

Country Status (4)

Country Link
US (1) US20220059557A1 (zh)
JP (1) JP2022036723A (zh)
CN (1) CN114093883A (zh)
TW (1) TWI800833B (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11791260B2 (en) * 2021-02-02 2023-10-17 Micron Technology, Inc. Contacts for twisted conductive lines within memory arrays

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140239376A1 (en) * 2013-02-26 2014-08-28 Gang Zhang Vertical memory devices and methods of manufacturing the same
TW201939676A (zh) * 2018-03-15 2019-10-01 日商東芝記憶體股份有限公司 半導體記憶裝置
TW202013689A (zh) * 2018-09-20 2020-04-01 日商東芝記憶體股份有限公司 半導體記憶裝置
TW202015216A (zh) * 2018-10-09 2020-04-16 大陸商長江存儲科技有限責任公司 三維記憶元件中的堆疊間插塞及其形成方法
US10700090B1 (en) * 2019-02-18 2020-06-30 Sandisk Technologies Llc Three-dimensional flat NAND memory device having curved memory elements and methods of making the same

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9478558B2 (en) * 2015-01-20 2016-10-25 Sandisk Technologies Llc Semiconductor structure with concave blocking dielectric sidewall and method of making thereof by isotropically etching the blocking dielectric layer
US10985171B2 (en) * 2018-09-26 2021-04-20 Sandisk Technologies Llc Three-dimensional flat NAND memory device including wavy word lines and method of making the same
US11018151B2 (en) * 2018-09-26 2021-05-25 Sandisk Technologies Llc Three-dimensional flat NAND memory device including wavy word lines and method of making the same

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140239376A1 (en) * 2013-02-26 2014-08-28 Gang Zhang Vertical memory devices and methods of manufacturing the same
TW201939676A (zh) * 2018-03-15 2019-10-01 日商東芝記憶體股份有限公司 半導體記憶裝置
TW202013689A (zh) * 2018-09-20 2020-04-01 日商東芝記憶體股份有限公司 半導體記憶裝置
TW202015216A (zh) * 2018-10-09 2020-04-16 大陸商長江存儲科技有限責任公司 三維記憶元件中的堆疊間插塞及其形成方法
US10700090B1 (en) * 2019-02-18 2020-06-30 Sandisk Technologies Llc Three-dimensional flat NAND memory device having curved memory elements and methods of making the same

Also Published As

Publication number Publication date
TW202209647A (zh) 2022-03-01
US20220059557A1 (en) 2022-02-24
CN114093883A (zh) 2022-02-25
JP2022036723A (ja) 2022-03-08

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