TWI799476B - 用於從半導體基板及對應製程中移除蝕刻後或灰化後殘餘物之清潔組成物 - Google Patents

用於從半導體基板及對應製程中移除蝕刻後或灰化後殘餘物之清潔組成物 Download PDF

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Publication number
TWI799476B
TWI799476B TW107144121A TW107144121A TWI799476B TW I799476 B TWI799476 B TW I799476B TW 107144121 A TW107144121 A TW 107144121A TW 107144121 A TW107144121 A TW 107144121A TW I799476 B TWI799476 B TW I799476B
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TW
Taiwan
Prior art keywords
acid
cleaning composition
etching
post
residues
Prior art date
Application number
TW107144121A
Other languages
English (en)
Chinese (zh)
Other versions
TW201925447A (zh
Inventor
柯志正
安卓亞斯 克里普
鄭怡萍
喬恩尼司 席爾多瑞絲 維李恩提納斯 胡格布曼
Original Assignee
德商巴斯夫歐洲公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 德商巴斯夫歐洲公司 filed Critical 德商巴斯夫歐洲公司
Publication of TW201925447A publication Critical patent/TW201925447A/zh
Application granted granted Critical
Publication of TWI799476B publication Critical patent/TWI799476B/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/26—Organic compounds containing nitrogen
    • C11D3/30—Amines; Substituted amines ; Quaternized amines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/24—Organic compounds containing halogen
    • C11D3/245—Organic compounds containing halogen containing fluorine
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/0005—Other compounding ingredients characterised by their effect
    • C11D3/0073—Anticorrosion compositions
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/20—Organic compounds containing oxygen
    • C11D3/2075—Carboxylic acids-salts thereof
    • C11D3/2086—Hydroxy carboxylic acids-salts thereof
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/26—Organic compounds containing nitrogen
    • C11D3/33—Amino carboxylic acids
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/34—Organic compounds containing sulfur
    • C11D3/3409—Alkyl -, alkenyl -, cycloalkyl - or terpene sulfates or sulfonates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/23—Cleaning during device manufacture during, before or after processing of insulating materials
    • H10P70/234—Cleaning during device manufacture during, before or after processing of insulating materials the processing being the formation of vias or contact holes
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Emergency Medicine (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)
  • Weting (AREA)
TW107144121A 2017-12-08 2018-12-07 用於從半導體基板及對應製程中移除蝕刻後或灰化後殘餘物之清潔組成物 TWI799476B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
??17206097.2 2017-12-08
EP17206097.2 2017-12-08
EP17206097 2017-12-08

Publications (2)

Publication Number Publication Date
TW201925447A TW201925447A (zh) 2019-07-01
TWI799476B true TWI799476B (zh) 2023-04-21

Family

ID=60654767

Family Applications (1)

Application Number Title Priority Date Filing Date
TW107144121A TWI799476B (zh) 2017-12-08 2018-12-07 用於從半導體基板及對應製程中移除蝕刻後或灰化後殘餘物之清潔組成物

Country Status (8)

Country Link
US (1) US11377624B2 (https=)
EP (1) EP3720938A1 (https=)
JP (1) JP7330972B2 (https=)
KR (1) KR102786662B1 (https=)
CN (1) CN111465679A (https=)
IL (1) IL274877B2 (https=)
TW (1) TWI799476B (https=)
WO (1) WO2019110681A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI808161B (zh) 2018-04-27 2023-07-11 日商三菱瓦斯化學股份有限公司 水性組成物及使用此組成物之清洗方法
KR20220058069A (ko) * 2020-10-30 2022-05-09 주식회사 이엔에프테크놀로지 세정제 조성물 및 이를 이용한 세정방법
KR102944353B1 (ko) 2020-11-06 2026-03-27 주식회사 케이씨텍 연마 입자 용해용 조성물 및 이를 이용한 세정 방법
US12599937B2 (en) * 2024-01-23 2026-04-14 Applied Materials, Inc. Water-based, high-efficiency chemical reagent for substrate surface particle removal

Citations (4)

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TW200923076A (en) * 2007-11-23 2009-06-01 Anji Microelectronics Co Ltd Cleaning solution for plasma etch residue removal
US20100163788A1 (en) * 2006-12-21 2010-07-01 Advanced Technology Materials, Inc. Liquid cleaner for the removal of post-etch residues
US20150307818A1 (en) * 2010-07-16 2015-10-29 Advanced Technology Materials, Inc. Aqueous cleaner for the removal of post-etch residues
CN113214920A (zh) * 2015-03-31 2021-08-06 弗萨姆材料美国有限责任公司 清洁制剂

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US6696222B2 (en) 2001-07-24 2004-02-24 Silicon Integrated Systems Corp. Dual damascene process using metal hard mask
WO2004094581A1 (en) * 2003-04-18 2004-11-04 Ekc Technology, Inc. Aqueous fluoride compositions for cleaning semiconductor devices
CN100442449C (zh) 2003-05-02 2008-12-10 Ekc技术公司 半导体工艺中后蚀刻残留物的去除
JP4390616B2 (ja) * 2004-04-27 2009-12-24 Ｎｅｃエレクトロニクス株式会社 洗浄液及び半導体装置の製造方法
US7888302B2 (en) * 2005-02-03 2011-02-15 Air Products And Chemicals, Inc. Aqueous based residue removers comprising fluoride
JP2011503899A (ja) * 2007-11-16 2011-01-27 イー．ケー．シー．テクノロジー．インコーポレーテッド 半導体基板から金属ハードマスクエッチング残留物を除去するための組成物
US9074170B2 (en) 2008-10-21 2015-07-07 Advanced Technology Materials, Inc. Copper cleaning and protection formulations
US8114773B2 (en) 2010-07-06 2012-02-14 United Microelectronics Corp. Cleaning solution, cleaning method and damascene process using the same
US9223221B2 (en) * 2012-03-16 2015-12-29 Basf Se Photoresist stripping and cleaning composition, method of its preparation and its use
CN104395989A (zh) * 2012-05-18 2015-03-04 高级技术材料公司 用于改进有机残余物去除的具有低铜蚀刻速率的水性清洁溶液
US9536730B2 (en) * 2012-10-23 2017-01-03 Air Products And Chemicals, Inc. Cleaning formulations
KR102338550B1 (ko) 2013-06-06 2021-12-14 엔테그리스, 아이엔씨. 질화 티타늄의 선택적인 에칭을 위한 조성물 및 방법
KR102375342B1 (ko) 2014-05-13 2022-03-16 바스프 에스이 Tin 풀-백 및 클리닝 조성물
WO2018061582A1 (ja) * 2016-09-29 2018-04-05 富士フイルム株式会社 処理液および積層体の処理方法
CN111465716B (zh) * 2017-12-08 2025-11-14 巴斯夫欧洲公司 用于在低-k材料、铜和/或钴的层的存在下选择性蚀刻包含铝化合物的层的组合物及方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100163788A1 (en) * 2006-12-21 2010-07-01 Advanced Technology Materials, Inc. Liquid cleaner for the removal of post-etch residues
TW200923076A (en) * 2007-11-23 2009-06-01 Anji Microelectronics Co Ltd Cleaning solution for plasma etch residue removal
US20150307818A1 (en) * 2010-07-16 2015-10-29 Advanced Technology Materials, Inc. Aqueous cleaner for the removal of post-etch residues
CN113214920A (zh) * 2015-03-31 2021-08-06 弗萨姆材料美国有限责任公司 清洁制剂

Also Published As

Publication number Publication date
EP3720938A1 (en) 2020-10-14
US11377624B2 (en) 2022-07-05
IL274877B1 (en) 2023-11-01
US20210301221A1 (en) 2021-09-30
IL274877A (en) 2020-07-30
JP2021506131A (ja) 2021-02-18
KR20200088821A (ko) 2020-07-23
JP7330972B2 (ja) 2023-08-22
CN111465679A (zh) 2020-07-28
WO2019110681A1 (en) 2019-06-13
IL274877B2 (en) 2024-03-01
TW201925447A (zh) 2019-07-01
KR102786662B1 (ko) 2025-03-25

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