IL274877B2 - Cleaning composition for post-etch or post ash residue removal from a semiconductor substrate and corresponding manufacturing process - Google Patents

Cleaning composition for post-etch or post ash residue removal from a semiconductor substrate and corresponding manufacturing process

Info

Publication number
IL274877B2
IL274877B2 IL274877A IL27487720A IL274877B2 IL 274877 B2 IL274877 B2 IL 274877B2 IL 274877 A IL274877 A IL 274877A IL 27487720 A IL27487720 A IL 27487720A IL 274877 B2 IL274877 B2 IL 274877B2
Authority
IL
Israel
Prior art keywords
acid
range
cleaning composition
amino
triazole
Prior art date
Application number
IL274877A
Other languages
English (en)
Hebrew (he)
Other versions
IL274877B1 (en
IL274877A (en
Original Assignee
Basf Se
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Basf Se filed Critical Basf Se
Publication of IL274877A publication Critical patent/IL274877A/en
Publication of IL274877B1 publication Critical patent/IL274877B1/en
Publication of IL274877B2 publication Critical patent/IL274877B2/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/26—Organic compounds containing nitrogen
    • C11D3/30—Amines; Substituted amines ; Quaternized amines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/24—Organic compounds containing halogen
    • C11D3/245—Organic compounds containing halogen containing fluorine
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/0005—Other compounding ingredients characterised by their effect
    • C11D3/0073—Anticorrosion compositions
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/20—Organic compounds containing oxygen
    • C11D3/2075—Carboxylic acids-salts thereof
    • C11D3/2086—Hydroxy carboxylic acids-salts thereof
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/26—Organic compounds containing nitrogen
    • C11D3/33—Amino carboxylic acids
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/34—Organic compounds containing sulfur
    • C11D3/3409—Alkyl -, alkenyl -, cycloalkyl - or terpene sulfates or sulfonates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/23—Cleaning during device manufacture during, before or after processing of insulating materials
    • H10P70/234—Cleaning during device manufacture during, before or after processing of insulating materials the processing being the formation of vias or contact holes
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Emergency Medicine (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)
  • Weting (AREA)
IL274877A 2017-12-08 2018-12-05 Cleaning composition for post-etch or post ash residue removal from a semiconductor substrate and corresponding manufacturing process IL274877B2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP17206097 2017-12-08
PCT/EP2018/083684 WO2019110681A1 (en) 2017-12-08 2018-12-05 Cleaning composition for post-etch or post ash residue removal from a semiconductor substrate and corresponding manufacturing process

Publications (3)

Publication Number Publication Date
IL274877A IL274877A (en) 2020-07-30
IL274877B1 IL274877B1 (en) 2023-11-01
IL274877B2 true IL274877B2 (en) 2024-03-01

Family

ID=60654767

Family Applications (1)

Application Number Title Priority Date Filing Date
IL274877A IL274877B2 (en) 2017-12-08 2018-12-05 Cleaning composition for post-etch or post ash residue removal from a semiconductor substrate and corresponding manufacturing process

Country Status (8)

Country Link
US (1) US11377624B2 (https=)
EP (1) EP3720938A1 (https=)
JP (1) JP7330972B2 (https=)
KR (1) KR102786662B1 (https=)
CN (1) CN111465679A (https=)
IL (1) IL274877B2 (https=)
TW (1) TWI799476B (https=)
WO (1) WO2019110681A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI808161B (zh) 2018-04-27 2023-07-11 日商三菱瓦斯化學股份有限公司 水性組成物及使用此組成物之清洗方法
KR20220058069A (ko) * 2020-10-30 2022-05-09 주식회사 이엔에프테크놀로지 세정제 조성물 및 이를 이용한 세정방법
KR102944353B1 (ko) 2020-11-06 2026-03-27 주식회사 케이씨텍 연마 입자 용해용 조성물 및 이를 이용한 세정 방법
US12599937B2 (en) * 2024-01-23 2026-04-14 Applied Materials, Inc. Water-based, high-efficiency chemical reagent for substrate surface particle removal

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6696222B2 (en) 2001-07-24 2004-02-24 Silicon Integrated Systems Corp. Dual damascene process using metal hard mask
WO2004094581A1 (en) * 2003-04-18 2004-11-04 Ekc Technology, Inc. Aqueous fluoride compositions for cleaning semiconductor devices
CN100442449C (zh) 2003-05-02 2008-12-10 Ekc技术公司 半导体工艺中后蚀刻残留物的去除
JP4390616B2 (ja) * 2004-04-27 2009-12-24 Ｎｅｃエレクトロニクス株式会社 洗浄液及び半導体装置の製造方法
US7888302B2 (en) * 2005-02-03 2011-02-15 Air Products And Chemicals, Inc. Aqueous based residue removers comprising fluoride
TWI611047B (zh) 2006-12-21 2018-01-11 恩特葛瑞斯股份有限公司 用以移除蝕刻後殘餘物之液體清洗劑
JP2011503899A (ja) * 2007-11-16 2011-01-27 イー．ケー．シー．テクノロジー．インコーポレーテッド 半導体基板から金属ハードマスクエッチング残留物を除去するための組成物
TWI435932B (zh) * 2007-11-23 2014-05-01 Anji Microelectronics Co Ltd 用以清洗等離子蝕刻殘留物之清洗液
US9074170B2 (en) 2008-10-21 2015-07-07 Advanced Technology Materials, Inc. Copper cleaning and protection formulations
US8114773B2 (en) 2010-07-06 2012-02-14 United Microelectronics Corp. Cleaning solution, cleaning method and damascene process using the same
US9063431B2 (en) * 2010-07-16 2015-06-23 Advanced Technology Materials, Inc. Aqueous cleaner for the removal of post-etch residues
US9223221B2 (en) * 2012-03-16 2015-12-29 Basf Se Photoresist stripping and cleaning composition, method of its preparation and its use
CN104395989A (zh) * 2012-05-18 2015-03-04 高级技术材料公司 用于改进有机残余物去除的具有低铜蚀刻速率的水性清洁溶液
US9536730B2 (en) * 2012-10-23 2017-01-03 Air Products And Chemicals, Inc. Cleaning formulations
KR102338550B1 (ko) 2013-06-06 2021-12-14 엔테그리스, 아이엔씨. 질화 티타늄의 선택적인 에칭을 위한 조성물 및 방법
KR102375342B1 (ko) 2014-05-13 2022-03-16 바스프 에스이 Tin 풀-백 및 클리닝 조성물
US10647950B2 (en) * 2015-03-31 2020-05-12 Versum Materials Us, Llc Cleaning formulations
WO2018061582A1 (ja) * 2016-09-29 2018-04-05 富士フイルム株式会社 処理液および積層体の処理方法
CN111465716B (zh) * 2017-12-08 2025-11-14 巴斯夫欧洲公司 用于在低-k材料、铜和/或钴的层的存在下选择性蚀刻包含铝化合物的层的组合物及方法

Also Published As

Publication number Publication date
EP3720938A1 (en) 2020-10-14
US11377624B2 (en) 2022-07-05
IL274877B1 (en) 2023-11-01
US20210301221A1 (en) 2021-09-30
IL274877A (en) 2020-07-30
JP2021506131A (ja) 2021-02-18
KR20200088821A (ko) 2020-07-23
JP7330972B2 (ja) 2023-08-22
CN111465679A (zh) 2020-07-28
WO2019110681A1 (en) 2019-06-13
TWI799476B (zh) 2023-04-21
TW201925447A (zh) 2019-07-01
KR102786662B1 (ko) 2025-03-25

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