JP7330972B2 - 半導体基板からエッチング後または灰化後の残留物を除去するための洗浄剤組成物、およびそれに対応する製造方法 - Google Patents

半導体基板からエッチング後または灰化後の残留物を除去するための洗浄剤組成物、およびそれに対応する製造方法 Download PDF

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JP7330972B2
JP7330972B2 JP2020531513A JP2020531513A JP7330972B2 JP 7330972 B2 JP7330972 B2 JP 7330972B2 JP 2020531513 A JP2020531513 A JP 2020531513A JP 2020531513 A JP2020531513 A JP 2020531513A JP 7330972 B2 JP7330972 B2 JP 7330972B2
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acid
cleaning composition
amino
triazole
post
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JP2021506131A5 (https=
JP2021506131A (ja
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チョン ケ，チー
クリップ，アンドレアス
ピン チョン，イー
テオドルス ヴァレンティヌス ホーグブーム，ヨアネス
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BASF SE
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    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/26—Organic compounds containing nitrogen
    • C11D3/30—Amines; Substituted amines ; Quaternized amines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/24—Organic compounds containing halogen
    • C11D3/245—Organic compounds containing halogen containing fluorine
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/0005—Other compounding ingredients characterised by their effect
    • C11D3/0073—Anticorrosion compositions
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/20—Organic compounds containing oxygen
    • C11D3/2075—Carboxylic acids-salts thereof
    • C11D3/2086—Hydroxy carboxylic acids-salts thereof
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/26—Organic compounds containing nitrogen
    • C11D3/33—Amino carboxylic acids
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/34—Organic compounds containing sulfur
    • C11D3/3409—Alkyl -, alkenyl -, cycloalkyl - or terpene sulfates or sulfonates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/23—Cleaning during device manufacture during, before or after processing of insulating materials
    • H10P70/234—Cleaning during device manufacture during, before or after processing of insulating materials the processing being the formation of vias or contact holes
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

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  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Emergency Medicine (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)
  • Weting (AREA)
JP2020531513A 2017-12-08 2018-12-05 半導体基板からエッチング後または灰化後の残留物を除去するための洗浄剤組成物、およびそれに対応する製造方法 Active JP7330972B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP17206097.2 2017-12-08
EP17206097 2017-12-08
PCT/EP2018/083684 WO2019110681A1 (en) 2017-12-08 2018-12-05 Cleaning composition for post-etch or post ash residue removal from a semiconductor substrate and corresponding manufacturing process

Publications (3)

Publication Number Publication Date
JP2021506131A JP2021506131A (ja) 2021-02-18
JP2021506131A5 JP2021506131A5 (https=) 2021-12-16
JP7330972B2 true JP7330972B2 (ja) 2023-08-22

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JP2020531513A Active JP7330972B2 (ja) 2017-12-08 2018-12-05 半導体基板からエッチング後または灰化後の残留物を除去するための洗浄剤組成物、およびそれに対応する製造方法

Country Status (8)

Country Link
US (1) US11377624B2 (https=)
EP (1) EP3720938A1 (https=)
JP (1) JP7330972B2 (https=)
KR (1) KR102786662B1 (https=)
CN (1) CN111465679A (https=)
IL (1) IL274877B2 (https=)
TW (1) TWI799476B (https=)
WO (1) WO2019110681A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI808161B (zh) 2018-04-27 2023-07-11 日商三菱瓦斯化學股份有限公司 水性組成物及使用此組成物之清洗方法
KR20220058069A (ko) * 2020-10-30 2022-05-09 주식회사 이엔에프테크놀로지 세정제 조성물 및 이를 이용한 세정방법
KR102944353B1 (ko) 2020-11-06 2026-03-27 주식회사 케이씨텍 연마 입자 용해용 조성물 및 이를 이용한 세정 방법
US12599937B2 (en) * 2024-01-23 2026-04-14 Applied Materials, Inc. Water-based, high-efficiency chemical reagent for substrate surface particle removal

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005317636A (ja) 2004-04-27 2005-11-10 Nec Electronics Corp 洗浄液及び半導体装置の製造方法
JP2006307158A (ja) 2005-02-03 2006-11-09 Air Products & Chemicals Inc 残留物除去のための組成物と方法及びパターン画定方法
JP2010515246A (ja) 2006-12-21 2010-05-06 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド エッチング後残留物を除去するための液体洗浄剤
JP2013533631A (ja) 2010-07-16 2013-08-22 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド エッチング後残渣を除去するための水性洗浄剤
JP2014084464A (ja) 2012-10-23 2014-05-12 Air Products And Chemicals Inc クリーニング用組成物
JP2015524165A (ja) 2012-05-18 2015-08-20 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド 有機残渣除去を改良するための銅エッチングレートの低い水性洗浄溶液
WO2018061582A1 (ja) 2016-09-29 2018-04-05 富士フイルム株式会社 処理液および積層体の処理方法

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* Cited by examiner, † Cited by third party
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US6696222B2 (en) 2001-07-24 2004-02-24 Silicon Integrated Systems Corp. Dual damascene process using metal hard mask
WO2004094581A1 (en) * 2003-04-18 2004-11-04 Ekc Technology, Inc. Aqueous fluoride compositions for cleaning semiconductor devices
CN100442449C (zh) 2003-05-02 2008-12-10 Ekc技术公司 半导体工艺中后蚀刻残留物的去除
JP2011503899A (ja) * 2007-11-16 2011-01-27 イー．ケー．シー．テクノロジー．インコーポレーテッド 半導体基板から金属ハードマスクエッチング残留物を除去するための組成物
TWI435932B (zh) * 2007-11-23 2014-05-01 Anji Microelectronics Co Ltd 用以清洗等離子蝕刻殘留物之清洗液
US9074170B2 (en) 2008-10-21 2015-07-07 Advanced Technology Materials, Inc. Copper cleaning and protection formulations
US8114773B2 (en) 2010-07-06 2012-02-14 United Microelectronics Corp. Cleaning solution, cleaning method and damascene process using the same
US9223221B2 (en) * 2012-03-16 2015-12-29 Basf Se Photoresist stripping and cleaning composition, method of its preparation and its use
KR102338550B1 (ko) 2013-06-06 2021-12-14 엔테그리스, 아이엔씨. 질화 티타늄의 선택적인 에칭을 위한 조성물 및 방법
KR102375342B1 (ko) 2014-05-13 2022-03-16 바스프 에스이 Tin 풀-백 및 클리닝 조성물
US10647950B2 (en) * 2015-03-31 2020-05-12 Versum Materials Us, Llc Cleaning formulations
CN111465716B (zh) * 2017-12-08 2025-11-14 巴斯夫欧洲公司 用于在低-k材料、铜和/或钴的层的存在下选择性蚀刻包含铝化合物的层的组合物及方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005317636A (ja) 2004-04-27 2005-11-10 Nec Electronics Corp 洗浄液及び半導体装置の製造方法
JP2006307158A (ja) 2005-02-03 2006-11-09 Air Products & Chemicals Inc 残留物除去のための組成物と方法及びパターン画定方法
JP2010515246A (ja) 2006-12-21 2010-05-06 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド エッチング後残留物を除去するための液体洗浄剤
JP2013533631A (ja) 2010-07-16 2013-08-22 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド エッチング後残渣を除去するための水性洗浄剤
JP2015524165A (ja) 2012-05-18 2015-08-20 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド 有機残渣除去を改良するための銅エッチングレートの低い水性洗浄溶液
JP2014084464A (ja) 2012-10-23 2014-05-12 Air Products And Chemicals Inc クリーニング用組成物
WO2018061582A1 (ja) 2016-09-29 2018-04-05 富士フイルム株式会社 処理液および積層体の処理方法

Also Published As

Publication number Publication date
EP3720938A1 (en) 2020-10-14
US11377624B2 (en) 2022-07-05
IL274877B1 (en) 2023-11-01
US20210301221A1 (en) 2021-09-30
IL274877A (en) 2020-07-30
JP2021506131A (ja) 2021-02-18
KR20200088821A (ko) 2020-07-23
CN111465679A (zh) 2020-07-28
WO2019110681A1 (en) 2019-06-13
IL274877B2 (en) 2024-03-01
TWI799476B (zh) 2023-04-21
TW201925447A (zh) 2019-07-01
KR102786662B1 (ko) 2025-03-25

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