JP2021506131A5 - - Google Patents

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Publication number
JP2021506131A5
JP2021506131A5 JP2020531513A JP2020531513A JP2021506131A5 JP 2021506131 A5 JP2021506131 A5 JP 2021506131A5 JP 2020531513 A JP2020531513 A JP 2020531513A JP 2020531513 A JP2020531513 A JP 2020531513A JP 2021506131 A5 JP2021506131 A5 JP 2021506131A5
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JP
Japan
Prior art keywords
fluoride
ammonium
acid
mass
fluorosilicate
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JP2020531513A
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English (en)
Japanese (ja)
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JP2021506131A (ja
JP7330972B2 (ja
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Priority claimed from PCT/EP2018/083684 external-priority patent/WO2019110681A1/en
Publication of JP2021506131A publication Critical patent/JP2021506131A/ja
Publication of JP2021506131A5 publication Critical patent/JP2021506131A5/ja
Application granted granted Critical
Publication of JP7330972B2 publication Critical patent/JP7330972B2/ja
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JP2020531513A 2017-12-08 2018-12-05 半導体基板からエッチング後または灰化後の残留物を除去するための洗浄剤組成物、およびそれに対応する製造方法 Active JP7330972B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP17206097.2 2017-12-08
EP17206097 2017-12-08
PCT/EP2018/083684 WO2019110681A1 (en) 2017-12-08 2018-12-05 Cleaning composition for post-etch or post ash residue removal from a semiconductor substrate and corresponding manufacturing process

Publications (3)

Publication Number Publication Date
JP2021506131A JP2021506131A (ja) 2021-02-18
JP2021506131A5 true JP2021506131A5 (https=) 2021-12-16
JP7330972B2 JP7330972B2 (ja) 2023-08-22

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ID=60654767

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2020531513A Active JP7330972B2 (ja) 2017-12-08 2018-12-05 半導体基板からエッチング後または灰化後の残留物を除去するための洗浄剤組成物、およびそれに対応する製造方法

Country Status (8)

Country Link
US (1) US11377624B2 (https=)
EP (1) EP3720938A1 (https=)
JP (1) JP7330972B2 (https=)
KR (1) KR102786662B1 (https=)
CN (1) CN111465679A (https=)
IL (1) IL274877B2 (https=)
TW (1) TWI799476B (https=)
WO (1) WO2019110681A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI808161B (zh) 2018-04-27 2023-07-11 日商三菱瓦斯化學股份有限公司 水性組成物及使用此組成物之清洗方法
KR20220058069A (ko) * 2020-10-30 2022-05-09 주식회사 이엔에프테크놀로지 세정제 조성물 및 이를 이용한 세정방법
KR102944353B1 (ko) 2020-11-06 2026-03-27 주식회사 케이씨텍 연마 입자 용해용 조성물 및 이를 이용한 세정 방법
US12599937B2 (en) * 2024-01-23 2026-04-14 Applied Materials, Inc. Water-based, high-efficiency chemical reagent for substrate surface particle removal

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6696222B2 (en) 2001-07-24 2004-02-24 Silicon Integrated Systems Corp. Dual damascene process using metal hard mask
WO2004094581A1 (en) * 2003-04-18 2004-11-04 Ekc Technology, Inc. Aqueous fluoride compositions for cleaning semiconductor devices
CN100442449C (zh) 2003-05-02 2008-12-10 Ekc技术公司 半导体工艺中后蚀刻残留物的去除
JP4390616B2 (ja) * 2004-04-27 2009-12-24 Necエレクトロニクス株式会社 洗浄液及び半導体装置の製造方法
US7888302B2 (en) * 2005-02-03 2011-02-15 Air Products And Chemicals, Inc. Aqueous based residue removers comprising fluoride
TWI611047B (zh) 2006-12-21 2018-01-11 恩特葛瑞斯股份有限公司 用以移除蝕刻後殘餘物之液體清洗劑
JP2011503899A (ja) * 2007-11-16 2011-01-27 イー.ケー.シー.テクノロジー.インコーポレーテッド 半導体基板から金属ハードマスクエッチング残留物を除去するための組成物
TWI435932B (zh) * 2007-11-23 2014-05-01 Anji Microelectronics Co Ltd 用以清洗等離子蝕刻殘留物之清洗液
US9074170B2 (en) 2008-10-21 2015-07-07 Advanced Technology Materials, Inc. Copper cleaning and protection formulations
US8114773B2 (en) 2010-07-06 2012-02-14 United Microelectronics Corp. Cleaning solution, cleaning method and damascene process using the same
US9063431B2 (en) * 2010-07-16 2015-06-23 Advanced Technology Materials, Inc. Aqueous cleaner for the removal of post-etch residues
US9223221B2 (en) * 2012-03-16 2015-12-29 Basf Se Photoresist stripping and cleaning composition, method of its preparation and its use
CN104395989A (zh) * 2012-05-18 2015-03-04 高级技术材料公司 用于改进有机残余物去除的具有低铜蚀刻速率的水性清洁溶液
US9536730B2 (en) * 2012-10-23 2017-01-03 Air Products And Chemicals, Inc. Cleaning formulations
KR102338550B1 (ko) 2013-06-06 2021-12-14 엔테그리스, 아이엔씨. 질화 티타늄의 선택적인 에칭을 위한 조성물 및 방법
KR102375342B1 (ko) 2014-05-13 2022-03-16 바스프 에스이 Tin 풀-백 및 클리닝 조성물
US10647950B2 (en) * 2015-03-31 2020-05-12 Versum Materials Us, Llc Cleaning formulations
WO2018061582A1 (ja) * 2016-09-29 2018-04-05 富士フイルム株式会社 処理液および積層体の処理方法
CN111465716B (zh) * 2017-12-08 2025-11-14 巴斯夫欧洲公司 用于在低-k材料、铜和/或钴的层的存在下选择性蚀刻包含铝化合物的层的组合物及方法

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