KR102786662B1 - 반도체 기판으로부터 식각 후 또는 애싱 후 잔여물을 제거하는 세정 조성물 및 상응하는 제조 방법 - Google Patents

반도체 기판으로부터 식각 후 또는 애싱 후 잔여물을 제거하는 세정 조성물 및 상응하는 제조 방법 Download PDF

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KR102786662B1
KR102786662B1 KR1020207014948A KR20207014948A KR102786662B1 KR 102786662 B1 KR102786662 B1 KR 102786662B1 KR 1020207014948 A KR1020207014948 A KR 1020207014948A KR 20207014948 A KR20207014948 A KR 20207014948A KR 102786662 B1 KR102786662 B1 KR 102786662B1
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acid
cleaning composition
amino
etching
triazole
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Korean (ko)
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KR20200088821A (ko
Inventor
지 정 커
안드레아스 클리프
이 핑 청
요아네스 테오도뤼스 팔렌티뉘스 호흐봄
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바스프 에스이
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    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/0005—Other compounding ingredients characterised by their effect
    • C11D3/0073—Anticorrosion compositions
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/20—Organic compounds containing oxygen
    • C11D3/2075—Carboxylic acids-salts thereof
    • C11D3/2086—Hydroxy carboxylic acids-salts thereof
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/24—Organic compounds containing halogen
    • C11D3/245—Organic compounds containing halogen containing fluorine
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/26—Organic compounds containing nitrogen
    • C11D3/30—Amines; Substituted amines ; Quaternized amines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/26—Organic compounds containing nitrogen
    • C11D3/33—Amino carboxylic acids
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/34—Organic compounds containing sulfur
    • C11D3/3409—Alkyl -, alkenyl -, cycloalkyl - or terpene sulfates or sulfonates
    • H01L21/02063—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/23—Cleaning during device manufacture during, before or after processing of insulating materials
    • H10P70/234—Cleaning during device manufacture during, before or after processing of insulating materials the processing being the formation of vias or contact holes
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

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  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Emergency Medicine (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)
  • Weting (AREA)
KR1020207014948A 2017-12-08 2018-12-05 반도체 기판으로부터 식각 후 또는 애싱 후 잔여물을 제거하는 세정 조성물 및 상응하는 제조 방법 Active KR102786662B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP17206097.2 2017-12-08
EP17206097 2017-12-08
PCT/EP2018/083684 WO2019110681A1 (en) 2017-12-08 2018-12-05 Cleaning composition for post-etch or post ash residue removal from a semiconductor substrate and corresponding manufacturing process

Publications (2)

Publication Number Publication Date
KR20200088821A KR20200088821A (ko) 2020-07-23
KR102786662B1 true KR102786662B1 (ko) 2025-03-25

Family

ID=60654767

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020207014948A Active KR102786662B1 (ko) 2017-12-08 2018-12-05 반도체 기판으로부터 식각 후 또는 애싱 후 잔여물을 제거하는 세정 조성물 및 상응하는 제조 방법

Country Status (8)

Country Link
US (1) US11377624B2 (https=)
EP (1) EP3720938A1 (https=)
JP (1) JP7330972B2 (https=)
KR (1) KR102786662B1 (https=)
CN (1) CN111465679A (https=)
IL (1) IL274877B2 (https=)
TW (1) TWI799476B (https=)
WO (1) WO2019110681A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11629315B2 (en) 2018-04-27 2023-04-18 Mitsubishi Gas Chemical Company, Inc. Aqueous composition and cleaning method using same
KR20220058069A (ko) * 2020-10-30 2022-05-09 주식회사 이엔에프테크놀로지 세정제 조성물 및 이를 이용한 세정방법
KR102944353B1 (ko) * 2020-11-06 2026-03-27 주식회사 케이씨텍 연마 입자 용해용 조성물 및 이를 이용한 세정 방법
US12599937B2 (en) * 2024-01-23 2026-04-14 Applied Materials, Inc. Water-based, high-efficiency chemical reagent for substrate surface particle removal

Family Cites Families (19)

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Publication number Priority date Publication date Assignee Title
US6696222B2 (en) 2001-07-24 2004-02-24 Silicon Integrated Systems Corp. Dual damascene process using metal hard mask
WO2004094581A1 (en) * 2003-04-18 2004-11-04 Ekc Technology, Inc. Aqueous fluoride compositions for cleaning semiconductor devices
KR20060014388A (ko) * 2003-05-02 2006-02-15 이케이씨 테크놀로지, 인코포레이티드 반도체 공정에서의 에칭후 잔류물의 제거 방법
JP4390616B2 (ja) 2004-04-27 2009-12-24 Ｎｅｃエレクトロニクス株式会社 洗浄液及び半導体装置の製造方法
US7888302B2 (en) 2005-02-03 2011-02-15 Air Products And Chemicals, Inc. Aqueous based residue removers comprising fluoride
SG177915A1 (en) 2006-12-21 2012-02-28 Advanced Tech Materials Liquid cleaner for the removal of post-etch residues
KR20100082012A (ko) * 2007-11-16 2010-07-15 이케이씨 테크놀로지, 인코포레이티드 반도체 기판으로부터의 금속 하드 마스크 에칭 잔류물의 제거를 위한 조성물
TWI435932B (zh) * 2007-11-23 2014-05-01 Anji Microelectronics Co Ltd 用以清洗等離子蝕刻殘留物之清洗液
WO2010048139A2 (en) 2008-10-21 2010-04-29 Advanced Technology Materials, Inc. Copper cleaning and protection formulations
US8114773B2 (en) 2010-07-06 2012-02-14 United Microelectronics Corp. Cleaning solution, cleaning method and damascene process using the same
EP2593964A4 (en) * 2010-07-16 2017-12-06 Entegris Inc. Aqueous cleaner for the removal of post-etch residues
TWI588253B (zh) * 2012-03-16 2017-06-21 巴地斯顏料化工廠 光阻剝除與清潔組合物及其製備方法與用途
WO2013173743A2 (en) 2012-05-18 2013-11-21 Advanced Technology Materials, Inc. Aqueous clean solution with low copper etch rate for organic residue removal improvement
US9536730B2 (en) * 2012-10-23 2017-01-03 Air Products And Chemicals, Inc. Cleaning formulations
KR102338550B1 (ko) 2013-06-06 2021-12-14 엔테그리스, 아이엔씨. 질화 티타늄의 선택적인 에칭을 위한 조성물 및 방법
CN116286222A (zh) 2014-05-13 2023-06-23 巴斯夫欧洲公司 Tin拉回和清洁组合物
CN113214920A (zh) * 2015-03-31 2021-08-06 弗萨姆材料美国有限责任公司 清洁制剂
JP6970675B2 (ja) * 2016-09-29 2021-11-24 富士フイルム株式会社 処理液および積層体の処理方法
IL274880B2 (en) * 2017-12-08 2024-04-01 Basf Se Composition and process for selectively etching a layer comprising an aluminium compound in the presence of layers of low-k materials, copper and/or cobalt

Also Published As

Publication number Publication date
IL274877B2 (en) 2024-03-01
JP2021506131A (ja) 2021-02-18
WO2019110681A1 (en) 2019-06-13
TW201925447A (zh) 2019-07-01
CN111465679A (zh) 2020-07-28
US20210301221A1 (en) 2021-09-30
IL274877A (en) 2020-07-30
JP7330972B2 (ja) 2023-08-22
US11377624B2 (en) 2022-07-05
TWI799476B (zh) 2023-04-21
IL274877B1 (en) 2023-11-01
EP3720938A1 (en) 2020-10-14
KR20200088821A (ko) 2020-07-23

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