CN111465679A - 用于从半导体基板及对应方法中移除蚀刻后或灰化后残余物的清洁组合物 - Google Patents

用于从半导体基板及对应方法中移除蚀刻后或灰化后残余物的清洁组合物 Download PDF

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Publication number
CN111465679A
CN111465679A CN201880079173.3A CN201880079173A CN111465679A CN 111465679 A CN111465679 A CN 111465679A CN 201880079173 A CN201880079173 A CN 201880079173A CN 111465679 A CN111465679 A CN 111465679A
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China
Prior art keywords
acid
weight
range
cleaning composition
post
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Pending
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CN201880079173.3A
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English (en)
Chinese (zh)
Inventor
柯志正
A·克里普
郑怡萍
J·T·V·霍格博姆
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BASF SE
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BASF SE
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Application filed by BASF SE filed Critical BASF SE
Publication of CN111465679A publication Critical patent/CN111465679A/zh
Pending legal-status Critical Current

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    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16Organic compounds
    • C11D3/24Organic compounds containing halogen
    • C11D3/245Organic compounds containing halogen containing fluorine
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/0005Other compounding ingredients characterised by their effect
    • C11D3/0073Anticorrosion compositions
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16Organic compounds
    • C11D3/20Organic compounds containing oxygen
    • C11D3/2075Carboxylic acids-salts thereof
    • C11D3/2086Hydroxy carboxylic acids-salts thereof
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16Organic compounds
    • C11D3/26Organic compounds containing nitrogen
    • C11D3/30Amines; Substituted amines ; Quaternized amines
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16Organic compounds
    • C11D3/26Organic compounds containing nitrogen
    • C11D3/33Amino carboxylic acids
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16Organic compounds
    • C11D3/34Organic compounds containing sulfur
    • C11D3/3409Alkyl -, alkenyl -, cycloalkyl - or terpene sulfates or sulfonates
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00Cleaning of wafers, substrates or parts of devices
    • H10P70/20Cleaning during device manufacture
    • H10P70/23Cleaning during device manufacture during, before or after processing of insulating materials
    • H10P70/234Cleaning during device manufacture during, before or after processing of insulating materials the processing being the formation of vias or contact holes
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10Objects to be cleaned
    • C11D2111/14Hard surfaces
    • C11D2111/22Electronic devices, e.g. PCBs or semiconductors

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  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Emergency Medicine (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)
  • Weting (AREA)
CN201880079173.3A 2017-12-08 2018-12-05 用于从半导体基板及对应方法中移除蚀刻后或灰化后残余物的清洁组合物 Pending CN111465679A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP17206097.2 2017-12-08
EP17206097 2017-12-08
PCT/EP2018/083684 WO2019110681A1 (en) 2017-12-08 2018-12-05 Cleaning composition for post-etch or post ash residue removal from a semiconductor substrate and corresponding manufacturing process

Publications (1)

Publication Number Publication Date
CN111465679A true CN111465679A (zh) 2020-07-28

Family

ID=60654767

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201880079173.3A Pending CN111465679A (zh) 2017-12-08 2018-12-05 用于从半导体基板及对应方法中移除蚀刻后或灰化后残余物的清洁组合物

Country Status (8)

Country Link
US (1) US11377624B2 (https=)
EP (1) EP3720938A1 (https=)
JP (1) JP7330972B2 (https=)
KR (1) KR102786662B1 (https=)
CN (1) CN111465679A (https=)
IL (1) IL274877B2 (https=)
TW (1) TWI799476B (https=)
WO (1) WO2019110681A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114437883A (zh) * 2020-11-06 2022-05-06 凯斯科技股份有限公司 用于溶解抛光粒子的组合物及使用其的清洁方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI808161B (zh) 2018-04-27 2023-07-11 日商三菱瓦斯化學股份有限公司 水性組成物及使用此組成物之清洗方法
KR20220058069A (ko) * 2020-10-30 2022-05-09 주식회사 이엔에프테크놀로지 세정제 조성물 및 이를 이용한 세정방법
US12599937B2 (en) * 2024-01-23 2026-04-14 Applied Materials, Inc. Water-based, high-efficiency chemical reagent for substrate surface particle removal

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050245409A1 (en) * 2003-05-02 2005-11-03 Mihaela Cernat Reducing oxide loss when using fluoride chemistries to remove post-etch residues in semiconductor processing
US20100163788A1 (en) * 2006-12-21 2010-07-01 Advanced Technology Materials, Inc. Liquid cleaner for the removal of post-etch residues
CN101883688A (zh) * 2007-11-16 2010-11-10 Ekc技术公司 用来从半导体基板除去金属硬掩模蚀刻残余物的组合物
CN103003923A (zh) * 2010-07-16 2013-03-27 高级技术材料公司 用于移除蚀刻后残余物的水性清洁剂
US20140109931A1 (en) * 2012-10-23 2014-04-24 Air Products And Chemicals Inc. Cleaning Formulations
CN104169801A (zh) * 2012-03-16 2014-11-26 巴斯夫欧洲公司 光致抗蚀剂剥离和清洁组合物、其制备方法及其用途

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6696222B2 (en) 2001-07-24 2004-02-24 Silicon Integrated Systems Corp. Dual damascene process using metal hard mask
WO2004094581A1 (en) * 2003-04-18 2004-11-04 Ekc Technology, Inc. Aqueous fluoride compositions for cleaning semiconductor devices
JP4390616B2 (ja) * 2004-04-27 2009-12-24 Necエレクトロニクス株式会社 洗浄液及び半導体装置の製造方法
US7888302B2 (en) * 2005-02-03 2011-02-15 Air Products And Chemicals, Inc. Aqueous based residue removers comprising fluoride
TWI435932B (zh) * 2007-11-23 2014-05-01 Anji Microelectronics Co Ltd 用以清洗等離子蝕刻殘留物之清洗液
US9074170B2 (en) 2008-10-21 2015-07-07 Advanced Technology Materials, Inc. Copper cleaning and protection formulations
US8114773B2 (en) 2010-07-06 2012-02-14 United Microelectronics Corp. Cleaning solution, cleaning method and damascene process using the same
CN104395989A (zh) * 2012-05-18 2015-03-04 高级技术材料公司 用于改进有机残余物去除的具有低铜蚀刻速率的水性清洁溶液
KR102338550B1 (ko) 2013-06-06 2021-12-14 엔테그리스, 아이엔씨. 질화 티타늄의 선택적인 에칭을 위한 조성물 및 방법
KR102375342B1 (ko) 2014-05-13 2022-03-16 바스프 에스이 Tin 풀-백 및 클리닝 조성물
US10647950B2 (en) * 2015-03-31 2020-05-12 Versum Materials Us, Llc Cleaning formulations
WO2018061582A1 (ja) * 2016-09-29 2018-04-05 富士フイルム株式会社 処理液および積層体の処理方法
CN111465716B (zh) * 2017-12-08 2025-11-14 巴斯夫欧洲公司 用于在低-k材料、铜和/或钴的层的存在下选择性蚀刻包含铝化合物的层的组合物及方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050245409A1 (en) * 2003-05-02 2005-11-03 Mihaela Cernat Reducing oxide loss when using fluoride chemistries to remove post-etch residues in semiconductor processing
US20100163788A1 (en) * 2006-12-21 2010-07-01 Advanced Technology Materials, Inc. Liquid cleaner for the removal of post-etch residues
CN101883688A (zh) * 2007-11-16 2010-11-10 Ekc技术公司 用来从半导体基板除去金属硬掩模蚀刻残余物的组合物
CN103003923A (zh) * 2010-07-16 2013-03-27 高级技术材料公司 用于移除蚀刻后残余物的水性清洁剂
US20130296214A1 (en) * 2010-07-16 2013-11-07 Advanced Technology Materials, Inc. Aqueous cleaner for the removal of post-etch residues
CN104169801A (zh) * 2012-03-16 2014-11-26 巴斯夫欧洲公司 光致抗蚀剂剥离和清洁组合物、其制备方法及其用途
US20140109931A1 (en) * 2012-10-23 2014-04-24 Air Products And Chemicals Inc. Cleaning Formulations

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114437883A (zh) * 2020-11-06 2022-05-06 凯斯科技股份有限公司 用于溶解抛光粒子的组合物及使用其的清洁方法
US12091636B2 (en) 2020-11-06 2024-09-17 Kctech Co., Ltd. Composition for dissolving abrasive particles and cleaning method using the same
CN114437883B (zh) * 2020-11-06 2024-11-19 凯斯科技股份有限公司 用于溶解抛光粒子的组合物及使用其的清洁方法

Also Published As

Publication number Publication date
EP3720938A1 (en) 2020-10-14
US11377624B2 (en) 2022-07-05
IL274877B1 (en) 2023-11-01
US20210301221A1 (en) 2021-09-30
IL274877A (en) 2020-07-30
JP2021506131A (ja) 2021-02-18
KR20200088821A (ko) 2020-07-23
JP7330972B2 (ja) 2023-08-22
WO2019110681A1 (en) 2019-06-13
IL274877B2 (en) 2024-03-01
TWI799476B (zh) 2023-04-21
TW201925447A (zh) 2019-07-01
KR102786662B1 (ko) 2025-03-25

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