TWI780291B - 具有傾斜週期性結構之度量衡目標及方法 - Google Patents

具有傾斜週期性結構之度量衡目標及方法 Download PDF

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Publication number
TWI780291B
TWI780291B TW108100629A TW108100629A TWI780291B TW I780291 B TWI780291 B TW I780291B TW 108100629 A TW108100629 A TW 108100629A TW 108100629 A TW108100629 A TW 108100629A TW I780291 B TWI780291 B TW I780291B
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TW
Taiwan
Prior art keywords
periodic
periodic structures
metrology
structures
target
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TW108100629A
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English (en)
Chinese (zh)
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TW201939171A (zh
Inventor
亞爾 飛勒
馬克 吉諾克
亞歷山卓 史畢札
維拉得摩 朗維司基
夏皮爾 伊納 塔許沙
Original Assignee
美商克萊譚克公司
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Application filed by 美商克萊譚克公司 filed Critical 美商克萊譚克公司
Publication of TW201939171A publication Critical patent/TW201939171A/zh
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Publication of TWI780291B publication Critical patent/TWI780291B/zh

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/7065—Defects, e.g. optical inspection of patterned layer for defects
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/7076—Mark details, e.g. phase grating mark, temporary mark
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/24—Optical enhancement of defects or not directly visible states, e.g. selective electrolytic deposition, bubbles in liquids, light emission, colour change
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Length Measuring Devices By Optical Means (AREA)
TW108100629A 2018-01-12 2019-01-08 具有傾斜週期性結構之度量衡目標及方法 TWI780291B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201862617086P 2018-01-12 2018-01-12
US62/617,086 2018-01-12
PCT/US2018/062931 WO2019139685A1 (en) 2018-01-12 2018-11-29 Metrology targets and methods with oblique periodic structures
??PCT/US18/62931 2018-11-29
WOPCT/US18/62931 2018-11-29

Publications (2)

Publication Number Publication Date
TW201939171A TW201939171A (zh) 2019-10-01
TWI780291B true TWI780291B (zh) 2022-10-11

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW108100629A TWI780291B (zh) 2018-01-12 2019-01-08 具有傾斜週期性結構之度量衡目標及方法

Country Status (7)

Country Link
US (1) US11137692B2 (enExample)
JP (2) JP2021511532A (enExample)
KR (1) KR102408316B1 (enExample)
CN (1) CN111542784B (enExample)
SG (1) SG11201913459RA (enExample)
TW (1) TWI780291B (enExample)
WO (1) WO2019139685A1 (enExample)

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KR102494237B1 (ko) * 2019-09-16 2023-01-31 케이엘에이 코포레이션 주기적 반도체 디바이스 오정합 계측 시스템 및 방법
CN112731778B (zh) * 2019-10-28 2022-08-02 长鑫存储技术有限公司 一种半导体套刻精度的控制方法及叠层标记
KR102857305B1 (ko) * 2020-02-07 2025-09-08 케이엘에이 코포레이션 반도체 디바이스의 오정합 측정에서의 비직교 타겟 및 이를 사용하기 위한 방법
CN113539867A (zh) * 2020-04-14 2021-10-22 中国科学院微电子研究所 半导体器件套刻精度的测量方法
KR102630496B1 (ko) * 2020-04-15 2024-01-29 케이엘에이 코포레이션 반도체 디바이스의 오정합을 측정하는 데 유용한 디바이스 스케일 피쳐를 갖는 오정합 타겟
US11604149B2 (en) 2020-04-23 2023-03-14 Kla Corporation Metrology methods and optical schemes for measurement of misregistration by using hatched target designs
CN111508932B (zh) * 2020-04-27 2021-12-14 深圳中科飞测科技股份有限公司 套刻标记及套刻误差的测量方法
US11355375B2 (en) * 2020-07-09 2022-06-07 Kla Corporation Device-like overlay metrology targets displaying Moiré effects
WO2022253526A1 (en) * 2021-05-31 2022-12-08 Asml Netherlands B.V. Metrology measurement method and apparatus
EP4137889A1 (en) * 2021-08-20 2023-02-22 ASML Netherlands B.V. Metrology measurement method and apparatus
US11703767B2 (en) * 2021-06-28 2023-07-18 Kla Corporation Overlay mark design for electron beam overlay
CN118119892A (zh) * 2021-10-19 2024-05-31 Asml荷兰有限公司 图案匹配方法
US12242202B2 (en) 2022-01-04 2025-03-04 Nanya Technology Corporation Method for overlay error correction
US20230213872A1 (en) * 2022-01-04 2023-07-06 Nanya Technology Corporation Mark for overlay measurement

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Also Published As

Publication number Publication date
KR102408316B1 (ko) 2022-06-10
US20200124982A1 (en) 2020-04-23
JP2022183203A (ja) 2022-12-08
JP2021511532A (ja) 2021-05-06
JP7544781B2 (ja) 2024-09-03
TW201939171A (zh) 2019-10-01
CN111542784A (zh) 2020-08-14
CN111542784B (zh) 2025-05-06
US11137692B2 (en) 2021-10-05
WO2019139685A1 (en) 2019-07-18
KR20200099615A (ko) 2020-08-24
SG11201913459RA (en) 2020-07-29

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