SG11201913459RA - Metrology targets and methods with oblique periodic structures - Google Patents

Metrology targets and methods with oblique periodic structures

Info

Publication number
SG11201913459RA
SG11201913459RA SG11201913459RA SG11201913459RA SG11201913459RA SG 11201913459R A SG11201913459R A SG 11201913459RA SG 11201913459R A SG11201913459R A SG 11201913459RA SG 11201913459R A SG11201913459R A SG 11201913459RA SG 11201913459R A SG11201913459R A SG 11201913459RA
Authority
SG
Singapore
Prior art keywords
methods
periodic structures
metrology targets
oblique periodic
oblique
Prior art date
Application number
SG11201913459RA
Inventor
Feler Yoel
Mark Ghinovker
Alexander Svizher
Vladimir Levinski
Inna Tarshish-Shapir
Original Assignee
Kla Tencor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kla Tencor Corp filed Critical Kla Tencor Corp
Publication of SG11201913459RA publication Critical patent/SG11201913459RA/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/7065—Defects, e.g. optical inspection of patterned layer for defects
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/7076—Mark details, e.g. phase grating mark, temporary mark
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/24—Optical enhancement of defects or not directly visible states, e.g. selective electrolytic deposition, bubbles in liquids, light emission, colour change
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Length Measuring Devices By Optical Means (AREA)
SG11201913459RA 2018-01-12 2018-11-29 Metrology targets and methods with oblique periodic structures SG11201913459RA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201862617086P 2018-01-12 2018-01-12
PCT/US2018/062931 WO2019139685A1 (en) 2018-01-12 2018-11-29 Metrology targets and methods with oblique periodic structures

Publications (1)

Publication Number Publication Date
SG11201913459RA true SG11201913459RA (en) 2020-07-29

Family

ID=67218346

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201913459RA SG11201913459RA (en) 2018-01-12 2018-11-29 Metrology targets and methods with oblique periodic structures

Country Status (7)

Country Link
US (1) US11137692B2 (en)
JP (2) JP2021511532A (en)
KR (1) KR102408316B1 (en)
CN (1) CN111542784A (en)
SG (1) SG11201913459RA (en)
TW (1) TWI780291B (en)
WO (1) WO2019139685A1 (en)

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US11256177B2 (en) * 2019-09-11 2022-02-22 Kla Corporation Imaging overlay targets using Moiré elements and rotational symmetry arrangements
KR102494237B1 (en) * 2019-09-16 2023-01-31 케이엘에이 코포레이션 System and method for measuring periodic semiconductor device mismatch
CN112731778B (en) * 2019-10-28 2022-08-02 长鑫存储技术有限公司 Control method for semiconductor alignment precision and laminated mark
KR20220137094A (en) 2020-02-07 2022-10-11 케이엘에이 코포레이션 Non-orthogonal target in mismatch measurement of semiconductor device and method for using same
CN113539867A (en) * 2020-04-14 2021-10-22 中国科学院微电子研究所 Method for measuring alignment precision of semiconductor device
KR102630496B1 (en) * 2020-04-15 2024-01-29 케이엘에이 코포레이션 Mismatch target with device scale features useful for measuring mismatch in semiconductor devices
US11604149B2 (en) 2020-04-23 2023-03-14 Kla Corporation Metrology methods and optical schemes for measurement of misregistration by using hatched target designs
CN111508932B (en) * 2020-04-27 2021-12-14 深圳中科飞测科技股份有限公司 Overlay mark and overlay error measuring method
US11355375B2 (en) * 2020-07-09 2022-06-07 Kla Corporation Device-like overlay metrology targets displaying Moiré effects
IL308370A (en) * 2021-05-31 2024-01-01 Asml Netherlands Bv Metrology measurement method and apparatus
EP4137889A1 (en) * 2021-08-20 2023-02-22 ASML Netherlands B.V. Metrology measurement method and apparatus
US11703767B2 (en) * 2021-06-28 2023-07-18 Kla Corporation Overlay mark design for electron beam overlay
WO2023066657A1 (en) * 2021-10-19 2023-04-27 Asml Netherlands B.V. Pattern matching method
US20230213872A1 (en) * 2022-01-04 2023-07-06 Nanya Technology Corporation Mark for overlay measurement

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JPS61284922A (en) * 1985-06-10 1986-12-15 Nippon Kogaku Kk <Nikon> Substrate provided with diffraction grating and apparatus for detecting position of said substrate
JPH0547634A (en) * 1991-08-13 1993-02-26 Nikon Corp Position detector
JP2870461B2 (en) * 1995-12-18 1999-03-17 日本電気株式会社 Photomask alignment mark and semiconductor device
JP2000012445A (en) * 1998-06-25 2000-01-14 Nikon Corp Position detecting method and apparatus, and aligner equipped with the apparatus
US7541201B2 (en) 2000-08-30 2009-06-02 Kla-Tencor Technologies Corporation Apparatus and methods for determining overlay of structures having rotational or mirror symmetry
US7068833B1 (en) 2000-08-30 2006-06-27 Kla-Tencor Corporation Overlay marks, methods of overlay mark design and methods of overlay measurements
WO2002019415A1 (en) * 2000-08-30 2002-03-07 Kla-Tencor Corporation Overlay marks, methods of overlay mark design and methods of overlay measurements
US6699624B2 (en) 2001-02-27 2004-03-02 Timbre Technologies, Inc. Grating test patterns and methods for overlay metrology
US7170604B2 (en) * 2002-07-03 2007-01-30 Tokyo Electron Limited Overlay metrology method and apparatus using more than one grating per measurement direction
JP2006245030A (en) * 2005-02-28 2006-09-14 Nikon Corp Measurement method and object with measurement pattern
KR20080096297A (en) * 2007-04-27 2008-10-30 삼성전자주식회사 Overlay mark of semiconductor devices
NL2006451A (en) * 2010-05-06 2011-11-08 Asml Netherlands Bv Production of an alignment mark.
US9093458B2 (en) * 2012-09-06 2015-07-28 Kla-Tencor Corporation Device correlated metrology (DCM) for OVL with embedded SEM structure overlay targets
JP2015095631A (en) * 2013-11-14 2015-05-18 マイクロン テクノロジー， インク． Semiconductor device
US9329495B2 (en) * 2013-11-20 2016-05-03 Globalfoundries Inc. Overlay metrology system and method
JP6433504B2 (en) * 2014-02-21 2018-12-05 エーエスエムエル ネザーランズ ビー．ブイ． Target configuration optimization and related targets
CN112485971A (en) * 2015-04-21 2021-03-12 科磊股份有限公司 Metrology target design for pitch device design
US9864209B2 (en) * 2015-05-19 2018-01-09 Kla-Tencor Corporation Self-moire target design principles for measuring unresolved device-like pitches
NL2017466A (en) * 2015-09-30 2017-04-05 Asml Netherlands Bv Metrology method, target and substrate
US10018919B2 (en) * 2016-05-29 2018-07-10 Kla-Tencor Corporation System and method for fabricating metrology targets oriented with an angle rotated with respect to device features
KR102640173B1 (en) * 2016-06-14 2024-02-26 삼성전자주식회사 Diffraction based overlay mark and metrology method

Also Published As

Publication number Publication date
KR102408316B1 (en) 2022-06-10
TWI780291B (en) 2022-10-11
JP7544781B2 (en) 2024-09-03
WO2019139685A1 (en) 2019-07-18
JP2022183203A (en) 2022-12-08
TW201939171A (en) 2019-10-01
CN111542784A (en) 2020-08-14
JP2021511532A (en) 2021-05-06
US11137692B2 (en) 2021-10-05
US20200124982A1 (en) 2020-04-23
KR20200099615A (en) 2020-08-24

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