SG11201913459RA - Metrology targets and methods with oblique periodic structures - Google Patents
Metrology targets and methods with oblique periodic structuresInfo
- Publication number
- SG11201913459RA SG11201913459RA SG11201913459RA SG11201913459RA SG11201913459RA SG 11201913459R A SG11201913459R A SG 11201913459RA SG 11201913459R A SG11201913459R A SG 11201913459RA SG 11201913459R A SG11201913459R A SG 11201913459RA SG 11201913459R A SG11201913459R A SG 11201913459RA
- Authority
- SG
- Singapore
- Prior art keywords
- methods
- periodic structures
- metrology targets
- oblique periodic
- oblique
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/7065—Defects, e.g. optical inspection of patterned layer for defects
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7073—Alignment marks and their environment
- G03F9/7076—Mark details, e.g. phase grating mark, temporary mark
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/24—Optical enhancement of defects or not directly visible states, e.g. selective electrolytic deposition, bubbles in liquids, light emission, colour change
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Length Measuring Devices By Optical Means (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201862617086P | 2018-01-12 | 2018-01-12 | |
PCT/US2018/062931 WO2019139685A1 (en) | 2018-01-12 | 2018-11-29 | Metrology targets and methods with oblique periodic structures |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201913459RA true SG11201913459RA (en) | 2020-07-29 |
Family
ID=67218346
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201913459RA SG11201913459RA (en) | 2018-01-12 | 2018-11-29 | Metrology targets and methods with oblique periodic structures |
Country Status (7)
Country | Link |
---|---|
US (1) | US11137692B2 (en) |
JP (2) | JP2021511532A (en) |
KR (1) | KR102408316B1 (en) |
CN (1) | CN111542784A (en) |
SG (1) | SG11201913459RA (en) |
TW (1) | TWI780291B (en) |
WO (1) | WO2019139685A1 (en) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11256177B2 (en) * | 2019-09-11 | 2022-02-22 | Kla Corporation | Imaging overlay targets using Moiré elements and rotational symmetry arrangements |
KR102494237B1 (en) * | 2019-09-16 | 2023-01-31 | 케이엘에이 코포레이션 | System and method for measuring periodic semiconductor device mismatch |
CN112731778B (en) * | 2019-10-28 | 2022-08-02 | 长鑫存储技术有限公司 | Control method for semiconductor alignment precision and laminated mark |
KR20220137094A (en) | 2020-02-07 | 2022-10-11 | 케이엘에이 코포레이션 | Non-orthogonal target in mismatch measurement of semiconductor device and method for using same |
CN113539867A (en) * | 2020-04-14 | 2021-10-22 | 中国科学院微电子研究所 | Method for measuring alignment precision of semiconductor device |
KR102630496B1 (en) * | 2020-04-15 | 2024-01-29 | 케이엘에이 코포레이션 | Mismatch target with device scale features useful for measuring mismatch in semiconductor devices |
US11604149B2 (en) | 2020-04-23 | 2023-03-14 | Kla Corporation | Metrology methods and optical schemes for measurement of misregistration by using hatched target designs |
CN111508932B (en) * | 2020-04-27 | 2021-12-14 | 深圳中科飞测科技股份有限公司 | Overlay mark and overlay error measuring method |
US11355375B2 (en) * | 2020-07-09 | 2022-06-07 | Kla Corporation | Device-like overlay metrology targets displaying Moiré effects |
IL308370A (en) * | 2021-05-31 | 2024-01-01 | Asml Netherlands Bv | Metrology measurement method and apparatus |
EP4137889A1 (en) * | 2021-08-20 | 2023-02-22 | ASML Netherlands B.V. | Metrology measurement method and apparatus |
US11703767B2 (en) * | 2021-06-28 | 2023-07-18 | Kla Corporation | Overlay mark design for electron beam overlay |
WO2023066657A1 (en) * | 2021-10-19 | 2023-04-27 | Asml Netherlands B.V. | Pattern matching method |
US20230213872A1 (en) * | 2022-01-04 | 2023-07-06 | Nanya Technology Corporation | Mark for overlay measurement |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61284922A (en) * | 1985-06-10 | 1986-12-15 | Nippon Kogaku Kk <Nikon> | Substrate provided with diffraction grating and apparatus for detecting position of said substrate |
JPH0547634A (en) * | 1991-08-13 | 1993-02-26 | Nikon Corp | Position detector |
JP2870461B2 (en) * | 1995-12-18 | 1999-03-17 | 日本電気株式会社 | Photomask alignment mark and semiconductor device |
JP2000012445A (en) * | 1998-06-25 | 2000-01-14 | Nikon Corp | Position detecting method and apparatus, and aligner equipped with the apparatus |
US7541201B2 (en) | 2000-08-30 | 2009-06-02 | Kla-Tencor Technologies Corporation | Apparatus and methods for determining overlay of structures having rotational or mirror symmetry |
US7068833B1 (en) | 2000-08-30 | 2006-06-27 | Kla-Tencor Corporation | Overlay marks, methods of overlay mark design and methods of overlay measurements |
WO2002019415A1 (en) * | 2000-08-30 | 2002-03-07 | Kla-Tencor Corporation | Overlay marks, methods of overlay mark design and methods of overlay measurements |
US6699624B2 (en) | 2001-02-27 | 2004-03-02 | Timbre Technologies, Inc. | Grating test patterns and methods for overlay metrology |
US7170604B2 (en) * | 2002-07-03 | 2007-01-30 | Tokyo Electron Limited | Overlay metrology method and apparatus using more than one grating per measurement direction |
JP2006245030A (en) * | 2005-02-28 | 2006-09-14 | Nikon Corp | Measurement method and object with measurement pattern |
KR20080096297A (en) * | 2007-04-27 | 2008-10-30 | 삼성전자주식회사 | Overlay mark of semiconductor devices |
NL2006451A (en) * | 2010-05-06 | 2011-11-08 | Asml Netherlands Bv | Production of an alignment mark. |
US9093458B2 (en) * | 2012-09-06 | 2015-07-28 | Kla-Tencor Corporation | Device correlated metrology (DCM) for OVL with embedded SEM structure overlay targets |
JP2015095631A (en) * | 2013-11-14 | 2015-05-18 | マイクロン テクノロジー, インク. | Semiconductor device |
US9329495B2 (en) * | 2013-11-20 | 2016-05-03 | Globalfoundries Inc. | Overlay metrology system and method |
JP6433504B2 (en) * | 2014-02-21 | 2018-12-05 | エーエスエムエル ネザーランズ ビー.ブイ. | Target configuration optimization and related targets |
CN112485971A (en) * | 2015-04-21 | 2021-03-12 | 科磊股份有限公司 | Metrology target design for pitch device design |
US9864209B2 (en) * | 2015-05-19 | 2018-01-09 | Kla-Tencor Corporation | Self-moire target design principles for measuring unresolved device-like pitches |
NL2017466A (en) * | 2015-09-30 | 2017-04-05 | Asml Netherlands Bv | Metrology method, target and substrate |
US10018919B2 (en) * | 2016-05-29 | 2018-07-10 | Kla-Tencor Corporation | System and method for fabricating metrology targets oriented with an angle rotated with respect to device features |
KR102640173B1 (en) * | 2016-06-14 | 2024-02-26 | 삼성전자주식회사 | Diffraction based overlay mark and metrology method |
-
2018
- 2018-11-29 US US16/313,972 patent/US11137692B2/en active Active
- 2018-11-29 WO PCT/US2018/062931 patent/WO2019139685A1/en active Application Filing
- 2018-11-29 JP JP2020538551A patent/JP2021511532A/en active Pending
- 2018-11-29 CN CN201880085027.1A patent/CN111542784A/en active Pending
- 2018-11-29 KR KR1020207023192A patent/KR102408316B1/en active IP Right Grant
- 2018-11-29 SG SG11201913459RA patent/SG11201913459RA/en unknown
-
2019
- 2019-01-08 TW TW108100629A patent/TWI780291B/en active
-
2022
- 2022-10-05 JP JP2022160693A patent/JP7544781B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
KR102408316B1 (en) | 2022-06-10 |
TWI780291B (en) | 2022-10-11 |
JP7544781B2 (en) | 2024-09-03 |
WO2019139685A1 (en) | 2019-07-18 |
JP2022183203A (en) | 2022-12-08 |
TW201939171A (en) | 2019-10-01 |
CN111542784A (en) | 2020-08-14 |
JP2021511532A (en) | 2021-05-06 |
US11137692B2 (en) | 2021-10-05 |
US20200124982A1 (en) | 2020-04-23 |
KR20200099615A (en) | 2020-08-24 |
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