KR102408316B1 - 경사진 주기적 구조물을 갖는 계측 타겟 및 방법 - Google Patents

경사진 주기적 구조물을 갖는 계측 타겟 및 방법 Download PDF

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Publication number
KR102408316B1
KR102408316B1 KR1020207023192A KR20207023192A KR102408316B1 KR 102408316 B1 KR102408316 B1 KR 102408316B1 KR 1020207023192 A KR1020207023192 A KR 1020207023192A KR 20207023192 A KR20207023192 A KR 20207023192A KR 102408316 B1 KR102408316 B1 KR 102408316B1
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South Korea
Prior art keywords
periodic
target
periodic structures
metrology target
structures
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Korean (ko)
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KR20200099615A (ko
Inventor
펠러 요엘
마크 기노프커
알렉산더 스비체르
블라디미르 레빈스키
인나 타르시슈-샤피르
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케이엘에이 코포레이션
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/7065—Defects, e.g. optical inspection of patterned layer for defects
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/7076—Mark details, e.g. phase grating mark, temporary mark
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/24—Optical enhancement of defects or not directly visible states, e.g. selective electrolytic deposition, bubbles in liquids, light emission, colour change
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Length Measuring Devices By Optical Means (AREA)
KR1020207023192A 2018-01-12 2018-11-29 경사진 주기적 구조물을 갖는 계측 타겟 및 방법 Active KR102408316B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201862617086P 2018-01-12 2018-01-12
US62/617,086 2018-01-12
PCT/US2018/062931 WO2019139685A1 (en) 2018-01-12 2018-11-29 Metrology targets and methods with oblique periodic structures

Publications (2)

Publication Number Publication Date
KR20200099615A KR20200099615A (ko) 2020-08-24
KR102408316B1 true KR102408316B1 (ko) 2022-06-10

Family

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KR1020207023192A Active KR102408316B1 (ko) 2018-01-12 2018-11-29 경사진 주기적 구조물을 갖는 계측 타겟 및 방법

Country Status (7)

Country Link
US (1) US11137692B2 (enExample)
JP (2) JP2021511532A (enExample)
KR (1) KR102408316B1 (enExample)
CN (1) CN111542784B (enExample)
SG (1) SG11201913459RA (enExample)
TW (1) TWI780291B (enExample)
WO (1) WO2019139685A1 (enExample)

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US11256177B2 (en) 2019-09-11 2022-02-22 Kla Corporation Imaging overlay targets using Moiré elements and rotational symmetry arrangements
WO2021054928A1 (en) * 2019-09-16 2021-03-25 Kla Corporation Periodic semiconductor device misregistration metrology system and method
CN112731778B (zh) * 2019-10-28 2022-08-02 长鑫存储技术有限公司 一种半导体套刻精度的控制方法及叠层标记
KR102857305B1 (ko) * 2020-02-07 2025-09-08 케이엘에이 코포레이션 반도체 디바이스의 오정합 측정에서의 비직교 타겟 및 이를 사용하기 위한 방법
CN113539867A (zh) * 2020-04-14 2021-10-22 中国科学院微电子研究所 半导体器件套刻精度的测量方法
WO2021211154A1 (en) * 2020-04-15 2021-10-21 Kla Corporation Misregistration target having device-scaled features useful in measuring misregistration of semiconductor devices
US11604149B2 (en) 2020-04-23 2023-03-14 Kla Corporation Metrology methods and optical schemes for measurement of misregistration by using hatched target designs
CN111508932B (zh) * 2020-04-27 2021-12-14 深圳中科飞测科技股份有限公司 套刻标记及套刻误差的测量方法
US11355375B2 (en) * 2020-07-09 2022-06-07 Kla Corporation Device-like overlay metrology targets displaying Moiré effects
EP4137889A1 (en) * 2021-08-20 2023-02-22 ASML Netherlands B.V. Metrology measurement method and apparatus
WO2022253526A1 (en) * 2021-05-31 2022-12-08 Asml Netherlands B.V. Metrology measurement method and apparatus
US11703767B2 (en) * 2021-06-28 2023-07-18 Kla Corporation Overlay mark design for electron beam overlay
US20240394454A1 (en) * 2021-10-19 2024-11-28 Asml Netherlands B.V. Pattern matching method
US20230213872A1 (en) * 2022-01-04 2023-07-06 Nanya Technology Corporation Mark for overlay measurement
US12242202B2 (en) 2022-01-04 2025-03-04 Nanya Technology Corporation Method for overlay error correction

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US20040137341A1 (en) 2001-02-27 2004-07-15 Xinhui Niu Grating test patterns and methods for overlay metrology
US20090291513A1 (en) 2000-08-30 2009-11-26 Kla-Tencor Corporation Overlay marks, methods of overlay mark design and methods of overlay measurements
US20150138555A1 (en) 2013-11-20 2015-05-21 Globalfoundries Inc. Overlay metrology system and method
WO2017055106A1 (en) 2015-09-30 2017-04-06 Asml Netherlands B.V. Metrology method, target and substrate

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JPS61284922A (ja) * 1985-06-10 1986-12-15 Nippon Kogaku Kk <Nikon> 回折格子を備えた基板及び該基板の位置検出装置
JPH0547634A (ja) * 1991-08-13 1993-02-26 Nikon Corp 位置検出装置
JP2870461B2 (ja) * 1995-12-18 1999-03-17 日本電気株式会社 フォトマスクの目合わせマーク及び半導体装置
JP2000012445A (ja) * 1998-06-25 2000-01-14 Nikon Corp 位置検出方法及び装置、並びに前記装置を備えた露光装置
EP1314198B1 (en) * 2000-08-30 2017-03-08 KLA-Tencor Corporation Overlay marks, methods of overlay mark design and methods of overlay measurements
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US7170604B2 (en) * 2002-07-03 2007-01-30 Tokyo Electron Limited Overlay metrology method and apparatus using more than one grating per measurement direction
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KR20080096297A (ko) * 2007-04-27 2008-10-30 삼성전자주식회사 반도체 소자의 오버레이 마크
NL2006451A (en) * 2010-05-06 2011-11-08 Asml Netherlands Bv Production of an alignment mark.
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US20090291513A1 (en) 2000-08-30 2009-11-26 Kla-Tencor Corporation Overlay marks, methods of overlay mark design and methods of overlay measurements
US20040137341A1 (en) 2001-02-27 2004-07-15 Xinhui Niu Grating test patterns and methods for overlay metrology
US20150138555A1 (en) 2013-11-20 2015-05-21 Globalfoundries Inc. Overlay metrology system and method
WO2017055106A1 (en) 2015-09-30 2017-04-06 Asml Netherlands B.V. Metrology method, target and substrate

Also Published As

Publication number Publication date
CN111542784B (zh) 2025-05-06
WO2019139685A1 (en) 2019-07-18
TWI780291B (zh) 2022-10-11
TW201939171A (zh) 2019-10-01
JP2022183203A (ja) 2022-12-08
CN111542784A (zh) 2020-08-14
US11137692B2 (en) 2021-10-05
KR20200099615A (ko) 2020-08-24
SG11201913459RA (en) 2020-07-29
JP2021511532A (ja) 2021-05-06
JP7544781B2 (ja) 2024-09-03
US20200124982A1 (en) 2020-04-23

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