TWI775981B - 複合銅箔及其製造方法 - Google Patents

複合銅箔及其製造方法 Download PDF

Info

Publication number
TWI775981B
TWI775981B TW107139932A TW107139932A TWI775981B TW I775981 B TWI775981 B TW I775981B TW 107139932 A TW107139932 A TW 107139932A TW 107139932 A TW107139932 A TW 107139932A TW I775981 B TWI775981 B TW I775981B
Authority
TW
Taiwan
Prior art keywords
copper foil
composite copper
composite
foil according
height
Prior art date
Application number
TW107139932A
Other languages
English (en)
Other versions
TW201936993A (zh
Inventor
佐藤牧子
鈴木理
小畠直貴
小鍛冶快允
Original Assignee
日商納美仕有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商納美仕有限公司 filed Critical 日商納美仕有限公司
Publication of TW201936993A publication Critical patent/TW201936993A/zh
Application granted granted Critical
Publication of TWI775981B publication Critical patent/TWI775981B/zh

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
    • C23G1/14—Cleaning or pickling metallic material with solutions or molten salts with alkaline solutions
    • C23G1/20—Other heavy metals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
    • C23C28/34—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates
    • C23C28/345—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates with at least one oxide layer
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/06—Wires; Strips; Foils
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1633—Process of electroless plating
    • C23C18/1635—Composition of the substrate
    • C23C18/1637—Composition of the substrate metallic substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1633—Process of electroless plating
    • C23C18/1646—Characteristics of the product obtained
    • C23C18/165—Multilayered product
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18—Pretreatment of the material to be coated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18—Pretreatment of the material to be coated
    • C23C18/1803—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces
    • C23C18/1824—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces by chemical pretreatment
    • C23C18/1837—Multistep pretreatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18—Pretreatment of the material to be coated
    • C23C18/1803—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces
    • C23C18/1824—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces by chemical pretreatment
    • C23C18/1837—Multistep pretreatment
    • C23C18/1841—Multistep pretreatment with use of metal first
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31—Coating with metals
    • C23C18/32—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C22/00—Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C22/05—Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using aqueous solutions
    • C23C22/06—Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using aqueous solutions using aqueous acidic solutions with pH less than 6
    • C23C22/48—Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using aqueous solutions using aqueous acidic solutions with pH less than 6 not containing phosphates, hexavalent chromium compounds, fluorides or complex fluorides, molybdates, tungstates, vanadates or oxalates
    • C23C22/52—Treatment of copper or alloys based thereon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C22/00—Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C22/05—Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using aqueous solutions
    • C23C22/60—Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using aqueous solutions using alkaline aqueous solutions with pH greater than 8
    • C23C22/63—Treatment of copper or alloys based thereon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
    • C23C28/32—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C30/00—Coating with metallic material characterised only by the composition of the metallic material, i.e. not characterised by the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
    • C23G1/02—Cleaning or pickling metallic material with solutions or molten salts with acid solutions
    • C23G1/10—Other heavy metals
    • C23G1/103—Other heavy metals copper or alloys of copper
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/34—Pretreatment of metallic surfaces to be electroplated
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/60—Electroplating characterised by the structure or texture of the layers
    • C25D5/605—Surface topography of the layers, e.g. rough, dendritic or nodular layers
    • C25D5/611—Smooth layers
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/06—Wires; Strips; Foils
    • C25D7/0614—Strips or foils
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
    • H05K3/382—Improvement of the adhesion between the insulating substrate and the metal by special treatment of the metal
    • H05K3/384—Improvement of the adhesion between the insulating substrate and the metal by special treatment of the metal by plating
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/04—Electroplating: Baths therefor from solutions of chromium
    • C25D3/08—Deposition of black chromium, e.g. hexavalent chromium, CrVI
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/12—Electroplating: Baths therefor from solutions of nickel or cobalt
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/22—Electroplating: Baths therefor from solutions of zinc
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/09—Use of materials for the conductive, e.g. metallic pattern
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/03—Conductive materials
    • H05K2201/0332—Structure of the conductor
    • H05K2201/0335—Layered conductors or foils
    • H05K2201/0355—Metal foils
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/07—Treatments involving liquids, e.g. plating, rinsing
    • H05K2203/0779—Treatments involving liquids, e.g. plating, rinsing characterised by the specific liquids involved
    • H05K2203/0786—Using an aqueous solution, e.g. for cleaning or during drilling of holes
    • H05K2203/0793—Aqueous alkaline solution, e.g. for cleaning or etching
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
    • H05K3/382—Improvement of the adhesion between the insulating substrate and the metal by special treatment of the metal
    • H05K3/385—Improvement of the adhesion between the insulating substrate and the metal by special treatment of the metal by conversion of the surface of the metal, e.g. by oxidation, whether or not followed by reaction or removal of the converted layer

Abstract

本發明的目的是提供一種新穎的複合銅箔。本發明之複合銅箔係在銅箔的至少一部分之表面形成有銅以外之金屬層，至少一部分之該複合銅箔的表面有凸部，在該複合銅箔的截面中，該凸部的高度為10nm以上且1000nm以下。

Description

複合銅箔及其製造方法
本發明係關於一種複合銅箔。
用於印刷佈線板之銅箔需要與樹脂之密著性。為了提升此密著性，已有藉由蝕刻等將銅箔表面粗化處理以提升物理性黏著力的方法。然而，隨著印刷佈線板之高密度化，銅箔表面亦需要平坦化。為了滿足上述相反的要求，已開發出進行氧化步驟及還原步驟等之銅表面處理方法(國際公開WO2014/126193號公報)。根據該方法，將銅箔前處理，浸漬於含有氧化劑之藥水，藉此使銅箔表面氧化形成氧化銅之凹凸後，浸漬於含有還原劑之藥水以使氧化銅還原，藉此調整表面的凹凸來整平表面粗度。此外，另開發有在氧化步驟中添加界面活性分子的方法作為利用氧化還原之銅箔處理的密著性改善方法(日本特表2013-534054號公報)、在還原步驟後使用胺基噻唑系化合物等在銅箔表面形成保護皮膜的方法(日本特開平8-97559號公報)。又，另外開發一種方法，係將絕緣基板之銅導體圖樣的表面粗化而形成有氧化銅層之表面上，形成具有分散地分布之金屬粒子的鍍膜(日本特開2000-151096號公報)。
本發明的目的是提供一種新穎的複合銅箔。
本發明之一實施例為一種複合銅箔，係在銅箔的至少一部分之 表面形成有銅以外之金屬層，至少一部分之該複合銅箔的該表面有凸部，在該複合銅箔的截面中，該凸部的高度為10nm以上且1000nm以下。該凸部的高度係在掃描式電子顯微鏡觀察的影像中，對於該凸部兩側之凹部的極小點連線，測定該連線的中點與該凸部的極大點的距離可作為該凸部的高度。又，於該表面，在深度6nm之銅對於所有金屬量的比例可為80%以下，在不包含氧的深度中銅對於所有金屬量的比例可為90重量%以上。該凸部的高度可為50nm以上且500nm以下。又，在該複合銅箔的截面中，每3.8μm中高度為50nm以上之凸部可有平均15個以上且100個以下。該金屬層可為均勻且不具有粒子。在銅原子組成比例為40%以上之深度中的Cu/O比可為0.9以上。該銅以外之金屬可為選自Sn、Ag、Zn、Al、Ti、Bi、Cr、Fe、Co、Ni、Pd、Au及Pt所組成之群組中的至少一種金屬。
本發明之其他實施例為一種複合銅箔的製造方法，係上述複合銅箔的製造方法，包含第一步驟及第二步驟，該第一步驟將銅箔表面氧化，該第二步驟對被氧化之該銅表面鍍敷處理。在該第一步驟之前可用鹼性水溶液進行鹼處理。該第一步驟中，被氧化之該銅表面可溶解於溶解劑。該第二步驟中，該鍍敷處理可為使用觸媒之無電解電鍍。該第二步驟中，該鍍敷處理亦可為電解電鍍。
〔第1圖〕本發明之實施例2~8及比較例1~2中，顯示複合銅箔之截面的掃描式電子顯微鏡(SEM)影像。
以下一邊列舉實施例一邊詳細說明本發明的實施形態。又，根據本說明書的記載，發明所屬技術領域中具有通常知識者係明瞭本發明的目的、特徵、優點及其構思，發明所屬技術領域中具有通常知識者可容易地根據本說明書的記載重現本發明。以下記載之發明的實施形態及具體實施例等，係表示本發明的較佳實施態樣，用於例示及說明，不用以限定本發明。發明所屬技術領域中具有通常知識者係明瞭，在本說明書所揭示之本發明的意圖及範圍內，可基於本說明書的記載進行各種修飾。
複合銅箔：本發明之一實施例的複合銅箔，係在銅箔的至少一部分表面形成銅以外之金屬層。此複合銅箔上，至少一部分之金屬層的表面有凸部。
該凸部的高度平均較佳為10nm以上，更佳為50nm以上，又較佳為100nm以上，又，較佳為1000nm以下，更佳為500nm以下，又較佳為200nm以下。例如藉由聚焦離子束(FIB)製作之複合銅箔的截面以掃描式電子顯微鏡(SEM)觀察的影像中，隔著凸部相鄰之凹部的極小點連線的中點，與凹部之間存在之凸部的極大點的距離，可作為凸部的高度。
在物體表面，每3.8μm中高度為50nm以上之凸部，較佳為平均15個以上，更佳為30個以上，又較佳為50個以上。又，較佳為100個以下，更佳為80個以下，又較佳為60個以下。例如藉由聚焦離子束(FIB)製作之複合銅箔的截面以掃描式電子顯微鏡(SEM)觀察的影像中，藉由計算每3.8μm中高度為50nm以上之凸部的數量可算出凸部數量。高度可如上述地測定。
銅以外之金屬的種類不特別限制，較佳為選自Sn、Ag、Zn、Al、Ti、Bi、Cr、Fe、Co、Ni、Pd、Au及Pt所組成之群組中的至少一種金屬。
銅以外之金屬層的厚度不特別限制，較佳為6nm以上，更佳為10nm以上，又較佳為14nm以上。
銅以外之金屬層中金屬的比例不特別限制，在深度6nm之銅對於所有金屬量的比例較佳為80重量%以下，更佳為50重量%以下，又較佳為30重量%以下。又，在不包含氧的深度中銅對於所有金屬量的比例較佳為90重量%以上，更佳為95重量%以上，又較佳為99重量%以上。又，在銅原子組成比例為40%以上之深度中的Cu/O比較佳為0.9以上，更佳為2以上，又較佳為5以上。在特定深度之銅對於所有金屬量的比例，可使用例如離子濺鍍及X射線光電子能譜法(XPS)來測定。
金屬層較佳為不具粒子的均勻層。在此，均勻意為在95%以上之面，較佳在98%以上之面，更佳在99%以上之面，其層厚度不超過層平均厚度的5倍，較佳不超過3倍，更佳不超過2倍。藉由形成不具粒子的均勻層，可以提升熱處理後的密著性。
此複合銅箔可作為用於印刷佈線板之銅箔。亦即，可以將複合銅箔與樹脂黏著為層狀，藉此製作積層板，以用於製造印刷佈線板。又，此複合銅箔可作為二次電池所使用之集電體來使用。亦即，將包含石墨等活性物質及聚偏二氟乙烯等黏合樹脂之漿料塗佈於複合銅箔，乾燥後製作電極而用以製造二次電池。
上述複合銅箔係粗化度低，但優點為密著性良好及具有耐熱性。
複合銅箔的製造方法：本發明之一實施例為複合銅箔的製造方法，包含將銅箔表面氧化的第一步驟及對被氧化之銅表面鍍敷處理的第二步驟。
首先，在第一步驟中，以氧化劑將銅表面氧化，形成氧化銅之 層，同時在表面形成凹凸部。在此氧化步驟之前雖無需進行蝕刻等粗化處理步驟，但亦可進行。亦可進行脫脂清洗，或可進行鹼處理以防止酸被帶入氧化步驟中。鹼處理方法不特別限制，較佳可用0.1~10g/L之鹼性水溶液，更佳可用1~2g/L之鹼性水溶液，鹼性水溶液例如可用氫氧化鈉水溶液，於30~50℃處理0.5~2分鐘程度來進行。
氧化劑不特別限制，例如可以使用亞氯酸鈉、次氯酸鈉、氯酸鉀、過氯酸鉀等之水溶液。氧化劑中可添加各種添加劑(例如磷酸三鈉十二水合物等磷酸鹽)或界面活性分子。界面活性分子可舉例如紫質、紫質大環、擴張紫質、縮環紫質、紫質直鏈聚合物、紫質夾心配位錯合物、紫質陣列、矽烷、四有機基-矽烷、胺基乙基-胺基丙基-三甲氧基矽烷、(3-胺基丙基)三甲氧基矽烷、(1-[3-(三甲氧基矽基)丙基]尿素)(1-[3-(Trimethoxysilyl)propyl]urea)、(3-胺基丙基)三乙氧基矽烷、(3-環氧丙基氧丙基)三甲氧基矽烷、(3-氯丙基)三甲氧基矽烷、(3-環氧丙基氧丙基)三甲氧基矽烷、二甲基二氯矽烷、3-(三甲氧基矽基)丙基甲基丙烯酸酯、乙基三乙醯氧基矽烷、三乙氧基(異丁基)矽烷、三乙氧基(辛基)矽烷、參(2-甲氧基乙氧基)(乙烯基)矽烷、氯三甲基矽烷、甲基三氯矽烷、四氯化矽、四乙氧基矽烷、苯基三甲氧基矽烷、氯三乙氧基矽烷、乙烯基-三甲氧基矽烷、胺、糖等。
氧化反應條件不特別限制，氧化劑的液溫較佳為40~95℃，更佳為45~80℃。反應時間較佳為0.5~30分鐘，更佳為1~10分鐘。
在第一步驟中，可用溶解劑溶解被氧化之銅箔表面，以調整被氧化之銅箔表面的凹凸部。
在本步驟使用的溶解劑不特別限制，較佳為螯合劑，特別是生物分解性之螯合劑，可舉例如乙二胺四乙酸、二羥乙基甘胺酸、L-麩胺酸二乙酸四鈉、乙二胺-N,N’-二琥珀酸、3-羥基-2,2’-亞胺基二琥珀酸鈉、甲基甘 胺酸二乙酸三鈉、天門冬胺酸二乙酸四鈉、N-2-羥基乙基亞胺基二乙酸二鈉、葡萄糖酸鈉等。
溶解劑的pH值不特別限制，較佳為鹼性，更佳為pH8~10.5、又較佳為pH9.0~10.5、又更佳為pH9.8~10.2。
此步驟中，氧化銅的溶解率為35~99%，較佳為77~99%，且處理銅表面直到氧化銅的厚度為4~150nm，較佳為8~50nm。在此條件下，與預浸體之剝離強度升高，減少處理不均。
接著，在第二步驟中，對於氧化銅之層以銅以外之金屬進行鍍敷處理，藉此製造複合銅箔。鍍敷處理方法可以使用習知技術，銅以外之金屬例如可使用Sn、Ag、Zn、Al、Ti、Bi、Cr、Fe、Co、Ni、Pd、Au、Pt或各種合金。鍍敷亦不特別限制，可藉由電解電鍍、無電解電鍍、真空蒸鍍或化成處理等來鍍敷。
在無電解電鍍鎳的情況下，較佳使用觸媒進行處理。觸媒可使用鐵、鈷、鎳、釕、銠、鈀、鋨、銥及該等之鹽。藉由使用觸媒進行處理，可以得到均勻且無粒子散佈之金屬層。藉此提升複合銅箔的耐熱性。在無電解電鍍鎳的情況下，還原劑較佳為使用銅或氧化銅不具有觸媒活性之還原劑。銅或氧化銅不具有觸媒活性之還原劑可舉例如次磷酸鈉等次磷酸鹽。
像這樣藉由對銅箔進行第一步驟及第二步驟，可以製造表面具有凸部之複合銅箔。凸部之Ra不特別限制，較佳為0.02μm以上，更佳為0.04μm以上，又，較佳為0.20μm以下，更佳為0.05μm以下。發明所屬技術領域中具有通常知識者可以容易地設定溫度、時間等條件以得到這樣的氧化銅。
對於用上述步驟製造之銅箔，可以進行使用矽烷耦合劑等之耦合處理或使用苯并三唑類之防鏽處理。
又，用上述步驟製造之銅箔與預浸體之間可以設置黏著層。黏著層的形成方法不特別限制，例如可以積層黏著性樹脂薄膜，或可藉由塗佈樹脂清漆來形成。
實施例：在實施例及比較例1使用DR-WS(古河電工股份有限公司製，厚度：18μm)作為銅箔，對光澤面(與相反面比較時為平坦之面)進行鍍敷處理。在比較例2使用電解銅箔F2-WS(古河電工股份有限公司製，厚度：18μm)的褪光面。以下詳細地說明其步驟。
(1)鹼處理：以1.2g/L之氫氧化鈉水溶液於40℃進行前處理(preconditioning)1分鐘。此係脫脂清洗，目的為減少氧化處理不均。此外，在比較例2未進行鹼處理。
(2)氧化處理：將進行過鹼處理之銅箔以氧化處理用水溶液(NaClO2 130g/L-NaOH 12g/L)於45℃進行氧化處理1分鐘。此外，在比較例2未進行氧化處理。上述處理後水洗銅箔。
(3)鍍敷處理：對於進行過氧化處理之銅箔，在實施例1~3使用鍍鎳用電解液(氨基磺酸鎳470g/L-硼酸40g/L)進行電解電鍍。在實施例5使用鍍鉻用電解液(鉻酸酐100g/L-硫酸1g/L)進行電解電鍍。在實施例6使用鍍鋅用電解液(氧化鋅10g/L-氫氧化鈉115g/L-日本表面化學股份有限公司製9500A 5ml/L-日本表面化學股份有限公司製9500B 0.5ml/L-日本表面化學股份有限公司製Hypersoft 10ml/L)進行電解電鍍。溫度、時間、電流密度等條件如第1表所示。比較例1未進行任何鍍敷步驟。在實施例4以30℃之敏化溶液(1.0g/L氯化錫、0.5~3.0mL/L鹽酸)處理1分鐘，並以30℃之活化溶液(100mg/L氯化鈀、0.1mL/L鹽酸)處理1分鐘後，使用Ni-P鍍敷溶液(日本Kanigen公司製BLUE SUMER)於90℃進行無電解電鍍5秒。
在實施例7係將實施例2所得到之銅箔於室溫下浸漬於1wt%矽烷耦合劑(信越矽利光製KBM-803)水溶液1分鐘後，於70℃之乾燥機內乾燥1分鐘所製作之銅箔用於實施例7。
Figure 107139932-A0305-02-0009-1
(4)凸部的高度及數量、以及表面粗度之測定：測定實施例1~6及比較例1~2之複合銅箔的凸部的高度、數量、及表面粗度。具體而言，使用共聚焦描式電子顯微鏡控制器MC-1000A(Lasertec股份有限公司製)測定。在掃描式電子顯微鏡(SEM)影像中，隔著凸部相鄰之凹部的極小點連線的中點，與凹部之間存在之凸部的極大點的距離，作為凸部的高度。使用5個獨立位置之SEM影像，於1個影像中測定3個部位，計算其平均值作為凸部的平均高度。接著在5個SEM影像中，計算每3.8μm中高度為50nm以上之凸部的數量，算出5個的平均值。表面粗度係計算算數平均粗度(Ra)。掃描式電子顯微鏡的觀察結果表示於第1圖，各個測定結果表示於第2表。又，Ra值越低表示銅箔表面的表面粗度越小。
(5)銅以外之金屬量的測定：對有鍍敷之實施例1~6設定銅以外之金屬量。具體而言，將有鍍敷之銅箔及未鍍敷之銅箔切成邊長3公分之正方形，分別溶解於12%硝酸水溶液，藉由高頻感應耦合電漿(ICP)分析法測定銅箔單一面的金屬量，其差值作為銅以外之金屬量。結果表示於第2表。
(6)密著性測定I剝離強度的測定：對於實施例1~7及比較 例1~2之各個銅箔，測試積層後的剝離強度及熱處理後的剝離強度。首先，對各個銅箔積層預浸體(Panasonic股份有限公司製R5670KJ)，用真空高壓壓力機在真空中於210℃保持30分鐘，藉此得到測定試料(Initial)。為了測試對熱的耐性，置入177℃之烘箱內10天，得到測定試料(耐熱試驗)。對上述測定試料以90°剝離試驗(日本工業規格(JIS)C5016)求出剝離強度(kgf/cm)。又，在實施例8係對於實施例2所得到之銅箔的箔與預浸體之間夾入以苯醚寡聚物及彈性體作為主成分之黏著薄膜(Namics股份有限公司製NC0207)作為黏著樹脂層，用真空高壓壓力機在真空中於210℃保持30分鐘，藉此得到測定試料(Initial)，並且以相同條件測定熱處理後的剝離強度。剝離強度越大表示預浸體與銅箔的密著性高。結果如第3表所示。
又，耐熱惡化率係藉由下述式子來計算。
耐熱惡化率(%)=100-[(耐熱試驗後的剝離強度/Initials的剝離強度)×100]
(7)密著性測定II滲出之判定：為了對實施例1~6及比較例1~2之各個銅箔測試對酸之耐性，將積層後的銅箔浸漬於60℃之鹽酸水溶液(4N)90分鐘，得到測定試料，並進行90°剝離試驗(日本工業規格(JIS)C5016)此時，測試在銅箔方面的黏著面有無滲出導致顏色變化。其結果如第3表所示。
(8)結果
Figure 107139932-A0305-02-0011-2
Figure 107139932-A0305-02-0012-3
未進行氧化處理亦未進行鍍敷處理之比較例2，凸部高度非常高，且表面粗度亦明顯地粗。僅進行氧化處理但未進行鍍敷處理之比較例1，表面粗度及剝離強度均為無問題之程度，但耐酸試驗後有滲出，且耐熱惡化率高。
另一方面，有進行氧化處理及適當強度之鍍敷處理的實施例1~6，無論鍍敷處理的方法或所覆蓋之金屬的種類為何，任一個要素的數值均無問題。鍍敷處理推測係增加密著性。此外，如第2表所示，在實施例1未觀察到凹凸，但如第3表所示，性能上沒有問題。
又，如實施例7地對所製造之銅箔進行耦合處理，或如實施例8地在所製造之銅箔與預浸體之間設置黏著層，均如第3表所示，銅箔的性能上沒有問題。
如上述，藉由氧化處理進行表面粗化後進行鍍敷處理，藉此可以製作剝離強度、耐酸試驗後的滲出、耐熱惡化率等性質優異的銅箔，可使此複合銅箔適合用於印刷佈線板。
產業利用性：根據本發明，可提供一種新穎的複合銅箔。

Claims (13)

  1. 一種複合銅箔，係在銅箔的至少一部分之表面形成有銅以外之金屬層，至少一部分之該複合銅箔的該表面有凸部，在該複合銅箔的截面中，該凸部的高度為10nm以上且1000nm以下。
  2. 如請求項1之複合銅箔，其中，於該表面，在深度6nm之銅對於所有金屬量的比例為80%以下，在不包含氧的深度中銅對於所有金屬量的比例為90重量%以上。
  3. 如請求項1之複合銅箔，其中，該凸部的高度為50nm以上且500nm以下。
  4. 如請求項1~3中任一項之複合銅箔，其中，在該複合銅箔的截面中，每3.8μm中高度為50nm以上之凸部有平均15個以上且100個以下。
  5. 如請求項1~3中任一項之複合銅箔，其中，該凸部的高度係在掃描式電子顯微鏡觀察的影像中，對於該凸部兩側之凹部的極小點連線，測定該連線的中點與該凸部的極大點的距離作為該凸部的高度。
  6. 如請求項1~3中任一項之複合銅箔，其中，該金屬層為均勻且不具有粒子。
  7. 如請求項1~3中任一項之複合銅箔，其中，在銅原子組成比例為40%以上之深度中的Cu/O比為0.9以上。
  8. 如請求項1~3中任一項之複合銅箔，其中，該銅以外之金屬為選自Sn、Ag、Zn、Al、Ti、Bi、Cr、Fe、Co、Ni、Pd、Au及Pt所組成之群組中的至少一種金屬。
  9. 一種複合銅箔的製造方法，係如請求項1~8中任一項之複合銅箔的製造方法，包含第一步驟及第二步驟，該第一步驟將銅箔表面氧 化，該第二步驟對被氧化之該銅表面鍍敷處理。
  10. 如請求項9之複合銅箔的製造方法，其中，在該第一步驟之前用鹼性水溶液進行鹼處理。
  11. 如請求項9之複合銅箔的製造方法，其中，該第一步驟中，被氧化之該銅表面溶解於溶解劑。
  12. 如請求項9之複合銅箔的製造方法，其中，該第二步驟中，該鍍敷處理為使用觸媒之無電解電鍍。
  13. 如請求項9之複合銅箔的製造方法，其中，該第二步驟中，該鍍敷處理為電解電鍍。
TW107139932A 2017-11-10 2018-11-09 複合銅箔及其製造方法 TWI775981B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2017217777 2017-11-10
JP2017-217777 2017-11-10
JP2018-069608 2018-03-30
JP2018069608 2018-03-30

Publications (2)

Publication Number Publication Date
TW201936993A TW201936993A (zh) 2019-09-16
TWI775981B true TWI775981B (zh) 2022-09-01

Family

ID=66439170

Family Applications (1)

Application Number Title Priority Date Filing Date
TW107139932A TWI775981B (zh) 2017-11-10 2018-11-09 複合銅箔及其製造方法

Country Status (7)

Country Link
US (1) US11781236B2 (zh)
EP (1) EP3708696A4 (zh)
JP (1) JP7127861B2 (zh)
KR (1) KR102636971B1 (zh)
CN (1) CN111344435A (zh)
TW (1) TWI775981B (zh)
WO (1) WO2019093494A1 (zh)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6778291B1 (ja) * 2019-03-04 2020-10-28 ナミックス株式会社 銅箔並びにそれを含むリチウムイオン電池の負極集電体及びその製造方法
JP6726780B1 (ja) * 2019-03-04 2020-07-22 ナミックス株式会社 銅箔並びにそれを含むリチウムイオン電池の負極集電体及びその製造方法
KR20220088684A (ko) 2019-10-25 2022-06-28 나믹스 가부시끼가이샤 복합 구리 부재
WO2021172096A1 (ja) * 2020-02-28 2021-09-02 ナミックス株式会社 空隙を有する複合銅部材
JPWO2021193470A1 (zh) * 2020-03-24 2021-09-30
WO2021220524A1 (ja) * 2020-04-27 2021-11-04 ナミックス株式会社 複合銅部材
CN111979534A (zh) * 2020-07-14 2020-11-24 中国科学院海洋研究所 基于液滴自弹跳效应的超疏水表面的制备方法及应用
JPWO2022244826A1 (zh) * 2021-05-20 2022-11-24
KR20240009404A (ko) * 2021-05-20 2024-01-22 미쓰이금속광업주식회사 조화 처리 구리박, 캐리어 구비 구리박, 동장 적층판 및 프린트 배선판
WO2023140063A1 (ja) * 2022-01-21 2023-07-27 ナミックス株式会社 複合銅部材、およびその複合銅部材を含むパワーモジュール

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW406137B (en) * 1998-07-30 2000-09-21 Gould Electronics Inc A method of treating copper or nickel foil
CN1860832A (zh) * 2003-09-30 2006-11-08 爱托特奇德国股份有限公司 铜电路和混合金属电路的微粗化处理的改进方法
TWI448539B (zh) * 2010-02-25 2014-08-11 Asahi Kasei E Materials Corp Copper oxide etching solution and etching method using the same
TWI479049B (zh) * 2011-11-22 2015-04-01 Macdermid Acumen Inc 金屬表面處理方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3332047B2 (ja) 1993-07-22 2002-10-07 三菱瓦斯化学株式会社 内層銅箔の処理方法
JPH07314603A (ja) 1993-12-28 1995-12-05 Nippon Denkai Kk 銅張積層体、多層プリント回路板及びそれらの処理方法
JPH0897559A (ja) 1994-09-26 1996-04-12 Okuno Chem Ind Co Ltd 多層プリント配線板の内層用回路板の銅箔処理方法、及び該内層用回路板の銅箔処理液
US6086743A (en) 1997-08-06 2000-07-11 Gould Electronics, Inc. Adhesion enhancement for metal foil
US5885436A (en) 1997-08-06 1999-03-23 Gould Electronics Inc. Adhesion enhancement for metal foil
JP2000151096A (ja) 1998-11-17 2000-05-30 Hitachi Ltd プリント配線板の製造方法
JP3743702B2 (ja) * 2000-04-28 2006-02-08 三井金属鉱業株式会社 プリント配線板のセミアディティブ製造法
JP5105137B2 (ja) 2006-04-25 2012-12-19 日立化成工業株式会社 銅箔を有する基板の製造方法及び銅箔を有する基板
US8142905B2 (en) * 2008-06-17 2012-03-27 Jx Nippon Mining & Metals Corporation Copper foil for printed circuit board and copper clad laminate for printed circuit board
JP5242710B2 (ja) * 2010-01-22 2013-07-24 古河電気工業株式会社 粗化処理銅箔、銅張積層板及びプリント配線板
US9345149B2 (en) 2010-07-06 2016-05-17 Esionic Corp. Methods of treating copper surfaces for enhancing adhesion to organic substrates for use in printed circuit boards
KR102059280B1 (ko) * 2011-09-30 2019-12-24 제이엑스금속주식회사 수지와의 밀착성이 우수한 동박 및 그 제조 방법 그리고 그 전해 동박을 사용한 프린트 배선판 또는 전지용 부극재
CN105102678B (zh) 2013-02-14 2018-06-12 三井金属矿业株式会社 表面处理铜箔及用表面处理铜箔得到的覆铜层压板
JP6241641B2 (ja) * 2013-03-28 2017-12-06 日立化成株式会社 多層配線基板の製造方法
MY182166A (en) 2013-09-20 2021-01-18 Namics Corp Copper foil, copper foil with carrier foil, and copper-clad laminate

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW406137B (en) * 1998-07-30 2000-09-21 Gould Electronics Inc A method of treating copper or nickel foil
CN1860832A (zh) * 2003-09-30 2006-11-08 爱托特奇德国股份有限公司 铜电路和混合金属电路的微粗化处理的改进方法
TWI448539B (zh) * 2010-02-25 2014-08-11 Asahi Kasei E Materials Corp Copper oxide etching solution and etching method using the same
TWI479049B (zh) * 2011-11-22 2015-04-01 Macdermid Acumen Inc 金屬表面處理方法

Also Published As

Publication number Publication date
JPWO2019093494A1 (ja) 2020-09-24
EP3708696A1 (en) 2020-09-16
KR102636971B1 (ko) 2024-02-16
WO2019093494A1 (ja) 2019-05-16
TW201936993A (zh) 2019-09-16
EP3708696A4 (en) 2021-07-21
JP7127861B2 (ja) 2022-08-30
KR20200087163A (ko) 2020-07-20
CN111344435A (zh) 2020-06-26
US20200332431A1 (en) 2020-10-22
US11781236B2 (en) 2023-10-10

Similar Documents

Publication Publication Date Title
TWI775981B (zh) 複合銅箔及其製造方法
JP7013003B2 (ja) 粗面化処理された銅表面を有する物体
WO2021172096A1 (ja) 空隙を有する複合銅部材
JPH07832B2 (ja) プリント回路用銅箔およびその製造方法
JP7456578B2 (ja) 銅表面の加工装置
WO2021079952A1 (ja) 複合銅部材
TW202311563A (zh) 銅構件
JP7409602B2 (ja) 複合銅部材
WO2020226159A1 (ja) 金属層を有する金属部材の製造方法
JP7479617B2 (ja) 複合銅部材
WO2022224683A1 (ja) 複合銅部材の製造システム
JP7352939B2 (ja) 複合銅部材
JP7328671B2 (ja) 積層体
JP2023145243A (ja) プリント配線板の製造方法
TW202330256A (zh) 金屬構件
TW202248460A (zh) 積層體的製造方法

Legal Events

Date Code Title Description
GD4A Issue of patent certificate for granted invention patent