TWI774720B - 樹脂組合物、樹脂組合物之製造方法、膜形成方法及硬化物 - Google Patents
樹脂組合物、樹脂組合物之製造方法、膜形成方法及硬化物 Download PDFInfo
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- TWI774720B TWI774720B TW106145799A TW106145799A TWI774720B TW I774720 B TWI774720 B TW I774720B TW 106145799 A TW106145799 A TW 106145799A TW 106145799 A TW106145799 A TW 106145799A TW I774720 B TWI774720 B TW I774720B
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- resin
- polysilane
- polysiloxane
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- 239000011342 resin composition Substances 0.000 title claims abstract description 64
- 238000000034 method Methods 0.000 title claims abstract description 27
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- 239000011347 resin Substances 0.000 claims abstract description 86
- 229920005989 resin Polymers 0.000 claims abstract description 86
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- 239000002904 solvent Substances 0.000 claims abstract description 49
- 229920001296 polysiloxane Polymers 0.000 claims abstract description 40
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- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims abstract description 19
- 125000006841 cyclic skeleton Chemical group 0.000 claims abstract description 13
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- 238000006482 condensation reaction Methods 0.000 claims description 11
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- 125000004429 atom Chemical group 0.000 description 4
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- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 4
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- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 description 4
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- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 4
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- ORVMIVQULIKXCP-UHFFFAOYSA-N trichloro(phenyl)silane Chemical compound Cl[Si](Cl)(Cl)C1=CC=CC=C1 ORVMIVQULIKXCP-UHFFFAOYSA-N 0.000 description 1
- GPWLZOISJZHVHX-UHFFFAOYSA-N trichloro(propan-2-yl)silane Chemical compound CC(C)[Si](Cl)(Cl)Cl GPWLZOISJZHVHX-UHFFFAOYSA-N 0.000 description 1
- YNJBWRMUSHSURL-UHFFFAOYSA-N trichloroacetic acid Chemical compound OC(=O)C(Cl)(Cl)Cl YNJBWRMUSHSURL-UHFFFAOYSA-N 0.000 description 1
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 1
- 239000005052 trichlorosilane Substances 0.000 description 1
- ALVYUZIFSCKIFP-UHFFFAOYSA-N triethoxy(2-methylpropyl)silane Chemical compound CCO[Si](CC(C)C)(OCC)OCC ALVYUZIFSCKIFP-UHFFFAOYSA-N 0.000 description 1
- VBSUMMHIJNZMRM-UHFFFAOYSA-N triethoxy(2-phenylethyl)silane Chemical compound CCO[Si](OCC)(OCC)CCC1=CC=CC=C1 VBSUMMHIJNZMRM-UHFFFAOYSA-N 0.000 description 1
- DENFJSAFJTVPJR-UHFFFAOYSA-N triethoxy(ethyl)silane Chemical compound CCO[Si](CC)(OCC)OCC DENFJSAFJTVPJR-UHFFFAOYSA-N 0.000 description 1
- CPUDPFPXCZDNGI-UHFFFAOYSA-N triethoxy(methyl)silane Chemical compound CCO[Si](C)(OCC)OCC CPUDPFPXCZDNGI-UHFFFAOYSA-N 0.000 description 1
- JCVQKRGIASEUKR-UHFFFAOYSA-N triethoxy(phenyl)silane Chemical compound CCO[Si](OCC)(OCC)C1=CC=CC=C1 JCVQKRGIASEUKR-UHFFFAOYSA-N 0.000 description 1
- UMFJXASDGBJDEB-UHFFFAOYSA-N triethoxy(prop-2-enyl)silane Chemical compound CCO[Si](CC=C)(OCC)OCC UMFJXASDGBJDEB-UHFFFAOYSA-N 0.000 description 1
- BJDLPDPRMYAOCM-UHFFFAOYSA-N triethoxy(propan-2-yl)silane Chemical compound CCO[Si](OCC)(OCC)C(C)C BJDLPDPRMYAOCM-UHFFFAOYSA-N 0.000 description 1
- JPFXZNHCKMVEJJ-UHFFFAOYSA-N trifluoro(2-methylpropyl)silane Chemical compound CC(C)C[Si](F)(F)F JPFXZNHCKMVEJJ-UHFFFAOYSA-N 0.000 description 1
- BHOCBLDBJFCBQS-UHFFFAOYSA-N trifluoro(methyl)silane Chemical compound C[Si](F)(F)F BHOCBLDBJFCBQS-UHFFFAOYSA-N 0.000 description 1
- KGWNTHHPMKEAIK-UHFFFAOYSA-N trifluoro(phenyl)silane Chemical compound F[Si](F)(F)C1=CC=CC=C1 KGWNTHHPMKEAIK-UHFFFAOYSA-N 0.000 description 1
- URIGEOLTAOMOQT-UHFFFAOYSA-N trifluoro(propan-2-yl)silane Chemical compound CC(C)[Si](F)(F)F URIGEOLTAOMOQT-UHFFFAOYSA-N 0.000 description 1
- JGHTXIKECBJCFI-UHFFFAOYSA-N trifluoro(propyl)silane Chemical compound CCC[Si](F)(F)F JGHTXIKECBJCFI-UHFFFAOYSA-N 0.000 description 1
- WPPVEXTUHHUEIV-UHFFFAOYSA-N trifluorosilane Chemical compound F[SiH](F)F WPPVEXTUHHUEIV-UHFFFAOYSA-N 0.000 description 1
- XYJRNCYWTVGEEG-UHFFFAOYSA-N trimethoxy(2-methylpropyl)silane Chemical compound CO[Si](OC)(OC)CC(C)C XYJRNCYWTVGEEG-UHFFFAOYSA-N 0.000 description 1
- UBMUZYGBAGFCDF-UHFFFAOYSA-N trimethoxy(2-phenylethyl)silane Chemical compound CO[Si](OC)(OC)CCC1=CC=CC=C1 UBMUZYGBAGFCDF-UHFFFAOYSA-N 0.000 description 1
- LFRDHGNFBLIJIY-UHFFFAOYSA-N trimethoxy(prop-2-enyl)silane Chemical compound CO[Si](OC)(OC)CC=C LFRDHGNFBLIJIY-UHFFFAOYSA-N 0.000 description 1
- LGROXJWYRXANBB-UHFFFAOYSA-N trimethoxy(propan-2-yl)silane Chemical compound CO[Si](OC)(OC)C(C)C LGROXJWYRXANBB-UHFFFAOYSA-N 0.000 description 1
- HQYALQRYBUJWDH-UHFFFAOYSA-N trimethoxy(propyl)silane Chemical compound CCC[Si](OC)(OC)OC HQYALQRYBUJWDH-UHFFFAOYSA-N 0.000 description 1
- YUYCVXFAYWRXLS-UHFFFAOYSA-N trimethoxysilane Chemical compound CO[SiH](OC)OC YUYCVXFAYWRXLS-UHFFFAOYSA-N 0.000 description 1
- 229940005605 valeric acid Drugs 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- 125000005023 xylyl group Chemical group 0.000 description 1
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Abstract
本發明提供一種所形成之膜之面內均勻性優異之樹脂組合物、該樹脂組合物之製造方法、該樹脂組合物之硬化物及使用該樹脂組合物之膜形成方法。 本發明之樹脂組合物係包括含矽樹脂成分及溶劑者,且 上述含矽樹脂成分包含選自由下述(I)及(II)所組成之群中之至少一種: (I)具有聚矽烷結構(I-1)及聚矽氧烷結構(I-2)之聚矽烷-聚矽氧烷樹脂 (II)具有聚矽烷結構(II-1)之樹脂與具有聚矽氧烷結構(II-2)之樹脂之混合物, 上述溶劑包含選自由萜烯化合物、以及含環狀骨架之乙酸酯化合物(其中,上述萜烯化合物除外)所組成之群中之至少一種溶劑,所述萜烯化合物具有選自由羥基及乙醯氧基所組成之群中之至少一種基。
Description
本發明係關於一種樹脂組合物、該樹脂組合物之製造方法、使用該樹脂組合物之膜形成方法及該樹脂組合物之硬化物。
作為被要求微細加工之各種基板,於半導體基板、液晶顯示器、有機發光顯示器(OLED)、電泳顯示器(電子紙)、觸控面板、彩色濾光片、背光裝置等顯示器材料之基板、太陽電池之基板、光感測器等光電轉換元件之基板、光電元件之基板等各種基板上,於製造工藝中實施微細加工,並使用有用以保護上述基板不受上述微細加工影響之保護膜。
又,此種保護膜就生產性(良率)及平坦性之觀點而言,要求面內膜厚之偏差較少之面內均勻性。
又,伴隨半導體基板之製造工藝中之微細化,於藉由多層抗蝕劑法進行圖案化時,利用溶劑將上層抗蝕劑剝離後,藉由乾式蝕刻將多層抗蝕劑下層膜全部去除,或藉由包含氫氟酸之剝離液等濕式蝕刻將含矽抗蝕劑下層膜去除,因此,擔憂對被加工基板之損壞。
例如,於專利文獻1中,提出有用以形成含矽抗蝕劑下層膜之塗佈型
含矽膜形成用組合物,所述含矽抗蝕劑下層膜能夠容易地利用不會對半導體基板或圖案化步驟中所需之塗佈型有機膜或以碳為主成分之CVD膜造成損壞之剝離液進行濕式蝕刻。
[專利文獻1]日本專利特開2016-74772號公報
然而,使用專利文獻1中記載之塗佈型組合物形成之含矽膜因面內膜厚之偏差較多,而要求面內均勻性之進一步改善。
本發明係鑒於上述先前技術之問題點,目的在於提供一種所形成之膜之面內均勻性優異之樹脂組合物、該樹脂組合物之製造方法、使用該樹脂組合物之膜形成方法及該樹脂組合物之硬化物。
本發明者等人發現藉由使包括含矽樹脂成分之樹脂組合物含有特定溶劑,而使所形成之膜之面內均勻性提昇,從而完成了本發明。
本發明之第1態樣係一種樹脂組合物,其係包括含矽樹脂成分及溶劑者,上述含矽樹脂成分包含選自由下述(I)及(II)所組成之群中之至少一種:
(I)具有聚矽烷結構(I-1)及聚矽氧烷結構(I-2)之聚矽烷-聚矽氧烷樹脂
(II)具有聚矽烷結構(II-1)之樹脂與具有聚矽氧烷結構(II-2)之樹脂之混合物,
上述溶劑包含選自由萜烯化合物、以及含環狀骨架之乙酸酯化合物(其中,上述萜烯化合物除外)所組成之群中之至少一種溶劑,所述萜烯化合物具有選自由羥基及乙醯氧基所組成之群中之至少一種基。
本發明之第2態樣係如第1態樣之樹脂組合物之製造方法,其包括選自由如下步驟所組成之群中之至少一個步驟:使選自由矽化合物以及上述矽化合物之水解物、縮合物及水解縮合物所組成之群中之至少一種與具有聚矽烷結構之樹脂進行水解縮合反應而獲得聚矽烷-聚矽氧烷樹脂之步驟,所述矽化合物選自由下述通式(A-1-1)~(A-1-4)所表示之矽化合物所組成之群中之至少一種;以及將具有聚矽烷結構之樹脂與具有聚矽氧烷結構之樹脂進行混合之步驟:R1R2R3SiX1 (A-1-1)
R4R5SiX2 2 (A-1-2)
R6SiX3 3 (A-1-3)
SiX4 4 (A-1-4)
(上述通式中,X1~X4分別獨立地為水解性基,R1、R2、R3、R4、R5及R6分別獨立地為氫原子或有機基,該有機基中之氫原子亦可經鹵素原子取代)。
本發明之第3態樣係使用第1態樣之樹脂組合物之膜形成方法。
本發明之第4態樣係第1態樣之樹脂組合物之硬化物。
根據本發明,提供一種所形成之膜之面內均勻性優異之樹脂組合物、該樹脂組合物之製造方法、使用該樹脂組合物之膜形成方法及該樹脂
組合物之硬化物。
以下,對本發明之實施態樣進行詳細說明,但本發明並不受以下之實施態樣之任何限定,能夠於本發明之目的之範圍內,施加適當變更而實施。
又,於本說明書中,「~」若無特別說明則表示以上至以下。
第1態樣之樹脂組合物係包括含矽樹脂成分及特定溶劑之樹脂組合物。
於第1態樣中,上述含矽樹脂成分包含選自由下述(I)及(II)所組成之群中之至少一種:
(I)具有聚矽烷結構(I-1)及聚矽氧烷結構(I-2)之聚矽烷-聚矽氧烷樹脂
(II)具有聚矽烷結構(II-1)之樹脂與具有聚矽氧烷結構(II-2)之樹脂之混合物。
上述聚矽氧烷結構(I-2)及(II-2)較佳為分別獨立地包含選自由下述通式(A-1-1)~(A-1-4)所表示之矽化合物所組成之群中之至少一種矽化合物之水解縮合結構,R1R2R3SiX1 (A-1-1)
R4R5SiX2 2 (A-1-2)
R6SiX3 3 (A-1-3)
SiX4 4 (A-1-4)
(上述通式中,X1~X4分別獨立地為水解性基,R1、R2、R3、R4、
R5及R6分別獨立地為氫原子或有機基,該有機基中之氫原子亦可經鹵素原子取代)。
作為X1~X4所表示之水解性基,可列舉烷氧基、鹵素原子或異氰酸基(NCO)等,較佳為烷氧基。
作為上述烷氧基,可列舉碳原子數1~6之烷氧基,具體而言,可列舉甲氧基、乙氧基、正丙氧基、異丙氧基、正丁氧基、第三丁氧基、戊氧基等。
作為上述鹵素原子,可列舉氟原子、氯原子、溴原子或碘原子,較佳為氯原子。
作為R1~R6所表示之有機基,可列舉碳數1~30之有機基,可列舉烷基[甲基、乙基、正丙基、異丙基、正丁基及第三丁基等碳原子數1~10之烷基(較佳為碳原子數1~6之烷基,尤佳為碳數1~4之烷基等)]、環烷基(環己基等碳原子數5~8之環烷基,尤佳為碳原子數5~6之環烷基)、烯基[乙烯基、丙烯基、丁烯基等碳原子數2~10之烯基(較佳為碳原子數2~6之烯基,尤佳為碳數2~4之烯基等)]、環烯基[1-環戊烯基、1-環己烯基等碳原子數5~10之環烯基(較佳為碳原子數5~8之環烯基,尤佳為碳數5~7之環烯基等)]、芳基(苯基、萘基等碳原子數6~10之芳基、)、芳烷基[苄基、苯乙基等C6-10芳基-C1-6烷基(C6-10芳基-C1-4烷基等)]、胺基、N-取代胺基(經上述烷基、環烷基、芳基、芳烷基、醯基等取代之N-單或雙取代胺基等)等。構成上述烷基、環烷基、芳基或芳烷基之芳基等亦可具有1個或複數個取代基。作為此種取代基,可列舉上述例示之烷基(尤佳為碳原子數1~6之烷基等)、上述例示之烷氧基等。作為具有此種取代基之有機基,例如,可列舉甲苯基、二甲苯基、乙基苯基、甲基萘
基等C1-6烷基-C6-10芳基(較佳為單、雙或三C1-4烷基-C6-10芳基,尤其是單或雙C1-4烷基苯基等);甲氧基苯基、乙氧基苯基、甲氧基萘基等C1-10烷氧基C6-10芳基(較佳為C1-6烷氧基C6-10芳基,尤佳為C1-4烷氧基苯基等)等。
作為上述通式(A-1-1)~(A-1-4)所表示之矽化合物,可列舉:三氯矽烷、三溴矽烷、及三氟矽烷等三鹵矽烷;四氯矽烷、四溴矽烷、及四氟矽烷等四鹵矽烷;甲基三氯矽烷、甲基三溴矽烷、甲基三氟矽烷、乙基三氯矽烷、乙基三溴矽烷、乙基三氟矽烷、正丙基三氯矽烷、正丙基三溴矽烷、正丙基三氟矽烷、異丙基三氯矽烷、異丙基三溴矽烷、異丙基三氟矽烷、正丁基三氯矽烷、正丁基三溴矽烷、正丁基三氟矽烷、異丁基三氯矽烷、異丁基三溴矽烷、異丁基三氟矽烷、第二丁基三氯矽烷、第二丁基三溴矽烷、第二丁基三氟矽烷、第三丁基三氯矽烷、第三丁基三溴矽烷、及第三丁基三氟矽烷等烷基三鹵矽烷;苯基三氯矽烷、苯基三溴矽烷、及苯基三氟矽烷等苯基三鹵矽烷;二氯二甲基矽烷、二溴二甲基矽烷、二氟二甲基矽烷、二氯二乙基矽烷、二溴二乙基矽烷、二氟二乙基矽烷、二氯二正丙基矽烷、二溴二正丙基矽烷、二氟二正丙基矽烷、二氯二異丙基矽烷、二溴二異丙基矽烷、二氟二異丙基矽烷、二氯二正丁基矽烷、二溴二正丁基矽烷、二氟二正丁基矽烷、二氯二正丁基矽烷、二溴二正丁基矽烷、二氟二正丁基矽烷、二氯二異丁基矽烷、二溴二異丁基矽烷、二氟二異丁基矽烷、二氯二第二丁基矽烷、二溴二第二丁基矽烷、二氟二第二丁基矽烷、二氯二第三丁基矽烷、二氯二第三丁基矽烷、及二氯二第三丁基矽烷等二烷基二鹵矽烷;二氯二苯基矽烷、二溴二苯基矽烷、及二氟二苯基矽烷等二苯基二鹵矽烷、四甲氧基矽烷、四乙氧基矽烷、甲基三甲氧基
矽烷、甲基三乙氧基矽烷、乙基三甲氧基矽烷、乙基三乙氧基矽烷、乙烯基三甲氧基矽烷、乙烯基三乙氧基矽烷、丙基三甲氧基矽烷、丙基三乙氧基矽烷、異丙基三甲氧基矽烷、異丙基三乙氧基矽烷、丁基三甲氧基矽烷、丁基三乙氧基矽烷、異丁基三甲氧基矽烷、異丁基三乙氧基矽烷、烯丙基三甲氧基矽烷、烯丙基三乙氧基矽烷、環戊基三甲氧基矽烷、環戊基三乙氧基矽烷、環己基三甲氧基矽烷、環己基三乙氧基矽烷、環己烯基三甲氧基矽烷、環己烯基三乙氧基矽烷、苯基三甲氧基矽烷、苯基三乙氧基矽烷、苄基三甲氧基矽烷、苄基三乙氧基矽烷、甲苯基三甲氧基矽烷、甲苯基三乙氧基矽烷、茴香基三甲氧基矽烷、茴香基三乙氧基矽烷、苯乙基三甲氧基矽烷、苯乙基三乙氧基矽烷、二甲基二甲氧基矽烷、二甲基二乙氧基矽烷、二乙基二甲氧基矽烷、二乙基二乙氧基矽烷、甲基乙基二甲氧基矽烷、甲基乙基二乙氧基矽烷、二丙基二甲氧基矽烷、二丁基二甲氧基矽烷、甲基苯基二甲氧基矽烷、甲基苯基二乙氧基矽烷、三甲基甲氧基矽烷、二甲基乙基甲氧基矽烷、二甲基苯基甲氧基矽烷、二甲基苄基甲氧基矽烷、二甲基苯乙基甲氧基矽烷、四異氰酸酯矽烷、三異氰酸甲酯矽烷、三異氰酸乙酯矽烷、三異氰酸丙酯矽烷、三異氰酸丁酯矽烷、二異氰酸二甲酯、二異氰酸二乙酯、二異氰酸二丙酯、二異氰酸二丁酯、異氰酸三甲酯矽烷、異氰酸三乙酯矽烷、異氰酸三丙酯矽烷、異氰酸三丁酯矽烷等。
又,上述通式(A-1-3)所表示之矽化合物亦可為下述式(A-3)所表示之矽化合物:HOOC-U-Z-Y-Si(ORa)3 (A-3)
(上述通式(A-3)中,U表示藉由從芳香族環基或脂環基中去除2個環碳原子之各1個氫原子而生成之二價基或亦可具有支鏈及/或雙鍵之伸烷
基,Z表示-NHCO-或-CONH-,Y表示單鍵、伸烷基、伸芳基或-RY1-NH-RY2-(式中,RY1及RY2分別獨立地表示伸烷基),Ra分別獨立地表示烴基;其中,U及/或Y亦可具有選自由(甲基)丙烯醯基、乙烯基及環氧基所組成之群中之至少一種基作為取代基)。
作為上述U中之芳香族環,可列舉亦可具有碳數1~2之取代基之碳數6~10之芳香環(例如,苯環、萘環、甲苯基、二甲苯基等)。
作為上述U中之脂環,可列舉碳數5~10之脂環(例如,單環環烷基、單環環烯基、二環式烷基、籠型烷基等,具體而言,例如,可列舉環戊烷環、環己烷環、環庚烷環、環辛烷環、環壬烷環、環癸烷環、二環戊二烯環、降烷環、降烯環、立方烷環、籃烷環等)。
作為上述U中之亦可具有支鏈及/或雙鍵之伸烷基,可列舉碳數1~4之伸烷基,例如,可列舉亞甲基、伸乙基、伸丙基、伸乙烯基、(2-辛烯基)伸乙基、(2,4,6-三甲基-2-壬烯基)伸乙基等伸烷基、具有雙鍵之伸烷基或具有碳數1~9之支鏈之伸烷基。
作為上述Y中之伸烷基,可列舉碳數1~6之伸烷基,例如,可列舉亞甲基、伸乙基、伸丙基、伸丁基等。作為上述Y中之伸芳基,較佳為碳數6~10者。作為此種伸芳基,例如,可列舉伸苯基(鄰、間或對等)、伸萘基(1,4-、1,5-、2,6-等)等。作為上述Y中之-RY1-NH-RY2-,具體而言,例如,可列舉-CH2-NH-CH2-、-(CH2)2-NH-(CH2)2-、-(CH2)3-NH-(CH2)3-、-CH2-NH-(CH2)2-、-(CH2)2-NH-CH2-、-(CH2)2-NH-(CH2)3-、-(CH2)3-NH-(CH2)2-、-CH2-NH-(CH2)3-、-(CH2)3-NH-CH2-等。
作為選自由上述通式(A-1-1)~(A-1-4)所表示之矽化合物所組成之群中之至少一種矽化合物之水解縮合反應之條件,只要可使水解縮合反應進
行,則並無特別限制,能夠使用公知之條件,此時,亦可使用觸媒,作為上述觸媒,可列舉四丁基氫氧化銨、苄基三甲基氫氧化銨、苄基三乙基氫氧化銨、四甲基氫氧化銨、四丁基氫氧化銨、鹽酸、硫酸、甲酸、草酸。又,作為反應條件,例如,可使用1~10小時、25~100℃。
上述聚矽烷結構(I-1)及(II-1)較佳為分別獨立地包含如下結構,所述結構源自選自由下述通式(A-2-1)及(A-2-2)所表示之聚矽烷化合物所組成之群中之至少一種:(R7R8R9Si)a1(R10R11Si)a2(R12Si)a3(Si)a4 (A-2-1)
(上述通式中,R7、R8、R9、R10、R11及R12分別獨立地為氫原子、羥基或有機基,a1、a2、a3及a4分別獨立地為莫耳分率,a1+a2+a3+a4=1,0≦a1≦1,0≦a2≦1,0≦a3≦1及0≦a4≦1),
(上述通式(A-2-2)中,Ra1及Ra2分別獨立地表示氫原子、羥基或有機基,n表示3~20之整數)。
作為R7~R6、Ra1及Ra2所表示之有機基,可列舉與以上作為R1~R6所表示之有機基所說明之具體例及較佳之例相同者。
作為R7~R12、Ra1及Ra2所表示之有機基,例如,可藉由日本專利特開2003-261681號公報段落0031中記載之方法導入任意之有機基。
(I)聚矽烷-聚矽氧烷樹脂具有聚矽烷結構(I-1)及聚矽氧烷結構(I-2)。
作為(I)聚矽烷-聚矽氧烷樹脂,較佳為聚矽烷結構(I-1)與聚矽氧烷結構(I-2)經由氧原子(醚鍵(-O-))連結之聚矽烷-聚矽氧烷樹脂。
(I)聚矽烷-聚矽氧烷樹脂因相對於聚矽烷結構中之Si-Si鍵及聚矽氧烷結構中之Si-O鍵,聚矽烷結構之與聚矽氧烷結構之連結部分(例如,醚鍵)之鍵相對不穩定,而容易藉由鹼性顯影液之作用分解。藉此,於樹脂組合物含有(I)聚矽烷-聚矽氧烷樹脂之情形時,鹼性顯影性優異。
又,於樹脂組合物含有聚矽烷-聚矽氧烷樹脂之情形時,樹脂組合物可為正型亦可為負型,較佳為正型。
作為(I)聚矽烷-聚矽氧烷樹脂,較佳為包含選自由下述通式(H1)及(H2)所表示之結構所組成之群中之至少一種:[化2]A1-A2O-Psi-OA2-A1...(H1) A1-A2O-Psi-OH...(H2)
(上述通式(H1)及(H2)中,A1分別獨立地表示包含下述通式(A1)所表示之結構中之至少一種,且至少包含1個最左之結構之聚矽氧烷結構;-A2O-分別獨立地表示下述通式(A2)所表示之結構中之任一個連結基。再者,上述通式(H1)中,-OA2-表示下述通式(A1)中之主鏈-SiO-之鍵結順序相反之-OSi-結構;Psi表示聚矽烷結構(I-1))
(上述通式(A1)及(A2)中,R1、R2、R3、R4、R5及R6分別獨立地為氫原子或有機基,該有機基中之氫原子亦可經鹵素原子取代)。
作為R1~R6所表示之有機基之具體例及較佳之例,如上所述。
作為Psi所表示之聚矽烷結構(I-1),可列舉Si原子數3~40之聚矽烷結構,較佳為Si原子數5~30之聚矽烷結構。
(上述通式(B1)中,R10、R11及R12分別獨立地表示氫原子、羥基或有機基,*表示鍵結鍵)。
作為Psi所表示之聚矽烷結構(I-1),就於製造工藝中之加工時將樹脂組合物膜去除之情形時或對樹脂組合物賦予光微影性能之情形時,樹脂組合物膜之去除較為容易之方面而言,更佳為包含下述通式(B1-1)所表示之聚矽烷結構:[化6]
(上述通式(B1-1)中,*、R10及R11與通式(B1)同義)。
作為R10~R12所表示之有機基之具體例及較佳之例,與以上作為R1~R6所表示之有機基之具體例及較佳之例所說明者相同。
作為上述通式(H1)所表示之結構之1個具體例,可列舉下述通式(H3)所表示之結構:[化7]A1-A2O-Psi-OA2-A1-A2O-Psi-OA2-A1...(H3)
(上述通式(H3)中,A1、-A2O-、-OA2-及Psi與通式(H1)同義)。
作為(I)聚矽烷-聚矽氧烷樹脂之質量平均分子量(Mw),只要不妨礙本發明之目的,則並無特別限制,較佳為500~20000,更佳為1000~10000,進而較佳為2000~8000。
於本說明書中,質量平均分子量(Mw)係藉由凝膠滲透層析法(GPC)並進行聚苯乙烯換算所得之測定值。
能夠藉由使選自由矽化合物以及上述矽化合物之水解物、縮合物及水解縮合物所組成之群中之至少一種與具有聚矽烷結構之樹脂進行水解縮合反應來製造(I)聚矽烷-聚矽氧烷樹脂,所述矽化合物選自由上述通式(A-1-1)~(A-1-4)所表示之矽化合物所組成之群中之至少一種。
作為製造所使用之上述具有聚矽烷結構之樹脂,較佳為選自由上述通式(A-2-1)及(A-2-2)所表示之聚矽烷化合物所組成之群中之至少一種。
作為上述水解縮合反應條件,只要使水解縮合反應進行,則並無特別限制,例如,能夠將選自無機酸、脂肪族磺酸、及芳香族磺酸中之一種以上之化合物用作酸觸媒來進行水解縮合反應。作為此時所使用之酸觸媒,例如,可列舉氫氟酸、鹽酸、氫溴酸、硫酸、硝酸、過氯酸、磷酸、甲磺酸、苯磺酸、甲苯磺酸等。觸媒之使用量相對於上述通式(A-1-1)~(A-1-4)所表示之矽化合物1莫耳,較佳為10-6~10莫耳,更佳為10-5~5莫耳,進而較佳為10-4~1莫耳。
使上述通式(A-1-1)~(A-1-4)所表示之矽化合物進行水解縮合時之水量較佳為,相對於上述通式(A-1-1)~(A-1-4)所表示之矽化合物所具有之水解性基每1莫耳,添加0.01~100莫耳,更佳為添加0.05~50莫耳,進而較佳為添加0.1~30莫耳。
反應溫度較佳為0~100℃,更佳為5~80℃。
作為能夠對觸媒水溶液添加之有機溶劑,較佳為甲醇、乙醇、1-丙醇、2-丙醇、1-丁醇、2-丁醇、2-甲基-1-丙醇、丙酮、乙腈、四氫呋喃、甲苯、己烷、乙酸乙酯、環己酮、甲基戊基酮、丁二醇單甲醚、丙二醇單甲醚、乙二醇單甲醚、丁二醇單乙醚、丙二醇單乙醚、乙二醇單乙醚、丙二醇二甲醚、二乙二醇二甲醚、丙二醇單甲醚乙酸酯、丙二醇單乙醚乙酸酯、丙酮酸乙酯、乙酸丁酯、3-甲氧基丙酸甲酯、3-乙氧基丙酸乙酯、乙酸第三丁酯、丙酸第三丁酯、丙二醇單第三丁醚乙酸酯、γ-丁內酯、及該等之混合物等。
該等溶劑之中,更佳者為水溶性者。例如,可列舉:甲醇、乙醇、1-丙醇、2-丙醇等醇類;乙二醇、丙二醇等多元醇;丁二醇單甲醚、丙二醇單甲醚、乙二醇單甲醚、丁二醇單乙醚、丙二醇單乙醚、乙二醇單乙
醚、丁二醇單丙醚、丙二醇單丙醚、乙二醇單丙醚等多元醇縮合物衍生物;丙酮、乙腈、四氫呋喃等。其中尤佳為,沸點為100℃以下者。
又,作為上述有機溶劑,可較佳地使用選自由萜烯化合物、以及含環狀骨架之乙酸酯化合物(其中,上述萜烯化合物除外)所組成之群中之至少一種溶劑,所述萜烯化合物具有選自由下述羥基及乙醯氧基所組成之群中之至少一種基。
再者,有機溶劑之使用量較佳為相對於上述通式(A-1-1)~(A-1-4)所表示之矽化合物1莫耳為0~1,000ml,尤佳為0~500ml。
之後,若有需要,則亦可進行觸媒之中和反應,將藉由水解縮合反應生成之醇減壓去除,而獲得反應混合物水溶液。
上述通式(A-2-1)或(A-2-2)所表示之聚矽烷化合物能夠藉由適用或應用各種聚矽烷之製造方法來進行製備。
例如,可列舉(a)以鎂為還原劑使鹵矽烷類脫鹵縮聚之方法(「鎂還原法」,WO98/29476號公報、日本專利特開2003-277507號公報中記載之方法等);(b)使用金屬鈉等鹼金屬,以100℃以上之溫度,強力攪拌甲苯溶劑中之二烷基二鹵矽烷或者二鹵四烷基二矽烷,而還原性地使之偶合之方法[J.Am.Chem.Soc.,103(1981)7352];(c)使利用聯苯等遮蔽之二矽烯進行陰離子聚合之方法(日本專利特開平1-23063號公報);(d)使環狀矽烷類開環聚合之方法(日本專利特開平5-170913號公報);(e)使氫矽烷類藉由過渡金屬錯合物觸媒脫氫縮聚之方法(日本專利特公平7-17753號公報);(f)使二鹵矽烷類以室溫以下之溫度進行電極還原而製造聚矽烷之方法(日本專利特開平7-309953號公報)等;較佳為鎂還原法。
作為上述通式(A-2-1)或(A-2-2)所表示之聚矽烷化合物,可使用
Osaka Gas Chemicals製造之OGSOL SI-10-10(聚甲基苯基矽烷)、SI-10-20(聚甲基苯基矽烷)、SI-20-10(聚苯基矽烷)、SI-20-10改(聚苯基矽烷)、SI-30-10(環狀聚二苯基矽烷)等市售物。又,亦可使用使該等於下述鹼性條件下進行反應而低分子量化而成者。
作為具有聚矽烷結構(II-1)之樹脂,可列舉具有Si原子數3~40之聚矽烷結構之樹脂,較佳為具有Si原子數5~30之聚矽烷結構之樹脂。
作為具有聚矽烷結構(II-1)之樹脂,較佳為包含上述通式(B1)所表示之聚矽烷結構中之至少一種,更佳為包含上述通式(B1-1)所表示之聚矽烷結構。
具有聚矽烷結構(II-1)之樹脂較佳為選自由上述通式(A-2-1)及(A-2-2)所表示之聚矽烷化合物所組成之群中之至少一種。
作為具有聚矽烷結構(II-1)之樹脂之質量平均分子量(Mw),只要不妨礙本發明之目的,則並無特別限制,較佳為500~20000,更佳為1000~10000,進而較佳為2000~5000。
具有聚矽氧烷結構(II-2)之樹脂較佳為具有包含選自由上述通式(A-1-1)~(A-1-4)所表示之矽化合物所組成之群中之至少一種之混合物之水解縮合結構,更佳為包含上述通式(A1)所表示之聚矽氧烷結構中之至少一種。
具有聚矽氧烷結構(II-2)之樹脂能夠藉由包含選自由上述通式(A-1-1)
~(A-1-4)所表示之矽化合物所組成之群中之至少一種之混合物之水解縮合反應進行製造。
作為具有聚矽氧烷結構(II-2)之樹脂之質量平均分子量(Mw),只要不妨礙本發明之目的,則並無特別限制,較佳為500~20000,更佳為1000~10000。
於第1態樣之樹脂組合物中,具有聚矽烷結構(II-1)之樹脂相對於具有聚矽氧烷結構(II-2)之樹脂之混合比只要無損本發明之效果,則並無特別限制,較佳為0.01質量倍~5質量倍,更佳為0.05質量倍~1質量倍。
第1態樣之樹脂組合物包含選自由萜烯化合物、以及含環狀骨架之乙酸酯化合物(其中,上述萜烯化合物除外)所組成之群中之至少一種溶劑,作為溶劑,所述萜烯化合物具有選自由羥基及乙醯氧基所組成之群中之至少一種基,就面內均勻性之觀點而言,較佳為含環狀骨架之乙酸酯化合物。
作為具有選自由羥基及乙醯氧基所組成之群中之至少一種基之萜烯化合物,可較佳地列舉松油醇、二氫松油醇、4-(乙醯氧基)-α,α,4-三甲基環己烷甲醇乙酸酯、2-[1-甲基-1-(4-甲基-3-環己烯-1-基)乙氧基]乙醇等。
松油醇存在以下之α-、β-、γ-異構物,已由日本香料藥品(股)或Nippon Terpene Chemicals(股)上市。
又,二氫松油醇存在以下兩種化合物(1-羥基-對薄荷烷及8-羥基-對薄荷烷),已作為二氫松油醇、Terusorubu DTO-210由Nippon Terpene Chemicals(股)上市。
4-(乙醯氧基)-α,α,4-三甲基環己烷甲醇乙酸酯係下述式C-3所表示之化合物,作為與式C-1所表示之化合物及式C-2所表示之化合物之混合物,例如,已作為Terusorubu THA-90、Terusorubu THA-70由Nippon Terpene Chemicals(股)上市。
2-[1-甲基-1-(4-甲基-3-環己烯-1-基)乙氧基]乙醇係下述式所表示之化合物,例如,已作為Terusorubu TOE-100由Nippon Terpene Chemicals(股)上市。
該等之中,較佳為松油醇、二氫松油醇、Terusorubu THA-90、Terusorubu THA-70、Terusorubu TOE-100,進而較佳為二氫松油醇、Terusorubu THA-90、Terusorubu THA-70,更佳為Terusorubu THA-90、Terusorubu THA-70。
作為上述萜烯化合物,可單獨使用,亦可將兩種以上混合而使用。
於第1態樣之樹脂組合物包含具有選自由羥基及乙醯氧基所組成之群中之至少一種基之萜烯化合物作為溶劑之情形時,亦可進而包含20℃下之黏度未達50mPa‧s之有機溶劑作為輔助溶劑。
輔助溶劑之20℃下之黏度較佳為10mPa‧s以下,更佳為5mPa‧s以下,進而較佳為3mPa‧s以下。又,其下限並無特別限定,較佳為0.5mPa‧s以上。
作為20℃下之黏度未達50mPa‧s之有機溶劑,能夠使用公知之溶劑,可例示醇類、乙二醇單烷基醚類、乙二醇二烷基醚類、乙二醇單烷基醚乙酸酯類、丙二醇單烷基醚類、丙二醇二烷基醚類、丙二醇單烷基醚乙
酸酯類、二乙二醇二烷基醚類、二乙二醇單烷基醚乙酸酯類、二丙二醇單烷基醚類、丁二醇二乙酸酯類、二丙二醇二烷基醚類、二丙二醇單烷基醚乙酸酯類、酯類、酮類、醯胺類、內酯類等。作為其他具體例,可參照日本專利特開2009-098616號公報之段落0062。
該等溶劑之中,作為較佳之具體例,可列舉丁醇、四氫呋喃甲醇、苯氧基乙醇、1,3-丁二醇二乙酸酯、二乙二醇甲基乙基醚、丙二醇單甲醚乙酸酯、乙醯丙酮、乳酸乙酯,尤佳為例示丁醇、1,3-丁二醇二乙酸酯、二乙二醇甲基乙基醚、乙醯丙酮、乳酸乙酯。
20℃下之黏度未達50mPa‧s之有機溶劑可單獨使用1種,亦可併用兩種以上。
關於20℃下之黏度未達50mPa‧s之有機溶劑之沸點,就塗佈性之觀點而言,較佳為100℃~300℃,更佳為120℃~250℃,進而較佳為120℃~200℃。
(式(S1)中,Rs1分別獨立地為烷基,p為1~6之整數,q為0~(p+1)之整數)。
作為Rs1所表示之烷基,可列舉碳原子數1~3之烷基,可列舉甲基、乙基、正丙基、異丙基。
作為式(S1)所表示之乙酸環烷基酯之具體例,可列舉乙酸環丙酯、乙酸環丁酯、乙酸環戊酯、乙酸環己酯、乙酸環庚酯、及乙酸環辛酯。
該等之中,就獲取容易性等之觀點而言,較佳為乙酸環辛酯。
作為上述含環狀骨架之乙酸酯化合物,可單獨使用,亦可將兩種以上混合而使用。
第1態樣之樹脂組合物中之溶劑之含量較佳為以第1態樣之樹脂組合物之總固形物成分量成為3~30質量%之方式含有。更佳為5~20質量%,進而較佳為8~15質量%。即,較佳為總固形物成分:總溶劑(質量比)=8:92~30:70,更佳為5:95~20:80,進而較佳為8:92~15:85。
上述溶劑可單獨使用,亦可將兩種以上混合而使用。
第1態樣之樹脂組合物亦可包含於1個分子中具有2個以上之羥基或羧基之有機化合物。作為此種有機化合物,可列舉以下所示之化合物。
再者,上述結構式中之Y為氫原子、甲基、或羥基甲基,R15為亞甲基、羰基、或伸苯基,n為3以上且未達100之整數。na表示1~3之自然數,nb表示1以上之自然數,nc表示2~4之自然數,nd表示2以上之自然數。
上述結構式可能存在鏡像異構物(enantiomer)或非鏡像異構物(diastereomer),各結構式代表表示該等立體異構物之全部。該等立體異構物可單獨使用,亦可作為混合物使用。
上述有機化合物可單獨使用一種或將兩種以上組合而使用。其使用量相對於第1態樣之樹脂組合物之除掉溶劑之固形物成分總量,較佳為0.001~50質量%,更佳為0.01~30質量%。
藉由添加此種有機化合物,於製造工藝中之加工時將樹脂組合物膜去除之情形時或對樹脂組合物賦予光微影性能之情形時,使樹脂組合物膜之崩解加速,從而變得容易剝離。
第1態樣之樹脂組合物亦可包含熱交聯促進劑。作為能夠使用之熱交聯促進劑,具體而言,可列舉日本專利特開2007-302873號公報中記載之熱交聯促進劑。再者,上述熱交聯促進劑可單獨使用一種或將兩種以上組合而使用。又,熱交聯促進劑之添加量相對於上述第1態樣之樹脂組合物之除掉溶劑之固形物成分總量,較佳為0.01~50質量%,更佳為0.1~40質量%。
第1態樣之樹脂組合物亦可包含碳數為1~30之一元或二元以上之有機酸以提昇穩定性。作為此時添加之酸,可列舉甲酸、乙酸、丙酸、丁酸、戊酸、己酸、庚酸、辛酸、壬酸、癸酸、油酸、硬脂酸、亞麻油酸、次亞麻油酸、苯甲酸、苯二甲酸、異苯二甲酸、對苯二甲酸、水楊酸、三氟乙酸、單氯乙酸、二氯乙酸、三氯乙酸、草酸、丙二酸、甲基丙二酸、乙基丙二酸、丙基丙二酸、丁基丙二酸、二甲基丙二酸、二乙基丙二酸、丁二酸、甲基丁二酸、戊二酸、己二酸、衣康酸、馬來酸、富馬酸、檸康酸、檸檬酸等。該等之中,尤佳為草酸、馬來酸、甲酸、乙酸、丙酸、檸
檬酸等。又,為了保持穩定性,亦可將兩種以上之酸混合而使用。能夠以將上述有機酸換算為組合物之pH時成為較佳為0≦pH≦7、更佳為0.3≦pH≦6.5、進而較佳為0.5≦pH≦6之方式進行調配。
又,第1態樣之樹脂組合物亦可包含具有環狀醚作為取代基之一元或二元以上之醇、或醚化合物,作為穩定劑。作為能夠使用之穩定劑,具體而言,可列舉日本專利特開2009-126940號公報(0180)~(0184)段落中記載之穩定劑。
第1態樣之樹脂組合物亦可包含水。藉由添加水,使光微影性能提昇。第1態樣之樹脂組合物之溶劑成分中之水之含有率較佳為超過0質量%且未達50質量%,更佳為0.3~30質量%,進而較佳為0.5~20質量%。
第1態樣之樹脂組合物亦可包含光酸產生劑。作為能夠使用之光酸產生劑,具體而言,可列舉日本專利特開2009-126940號公報(0160)~(0179)段落中記載之光酸產生劑。
第1態樣之樹脂組合物亦可視需要包含界面活性劑。作為能夠使用之界面活性劑,具體而言,可列舉日本專利特開2009-126940號公報(0185)段落中記載之界面活性劑。
亦可視需要於第1態樣之樹脂組合物中添加磷酸鹽化合物或硼酸鹽化合物作為熱交聯促進劑。作為此種磷酸鹽化合物,例如,可列舉:磷酸銨、磷酸四甲基銨、磷酸四丁基銨等銨鹽、磷酸三苯基鋶等鋶鹽。又,作為此種硼酸鹽化合物,例如,可列舉:硼酸銨、硼酸四甲基銨、硼酸四丁基銨等銨鹽、硼酸三苯基鋶等鋶鹽。
再者,上述熱交聯促進劑可單獨使用一種或將兩種以上組合而使用。又,熱交聯促進劑之添加量相對於上述含矽組合物之除掉溶劑之固形
物成分總量,較佳為0.01~50質量%,更佳為0.1~40質量%。
第1態樣之組合物亦可包含其他各種硬化劑。
作為硬化劑,例如,可列舉:布忍斯特酸;咪唑類;有機胺類;有機磷化合物及其複合體;路易斯酸之有機胺錯合物;脒類;藉由光或熱使鹼性成分產生之硬化劑等。
第1態樣之樹脂組合物能夠用作形成保護各種基板(包括含金屬酸化物之膜、含各種金屬之膜)之保護膜或層間膜之用途。
作為上述各種基板,可列舉半導體基板、液晶顯示器、有機發光顯示器(OLED)、電泳顯示器(電子紙)、觸控面板、彩色濾光片、背光裝置等顯示器材料之基板(包括含金屬酸化物之膜、含各種金屬之膜)、太陽電池之基板(包括含金屬酸化物之膜、含各種金屬之膜)、光感測器等光電轉換元件之基板(包括含金屬酸化物之膜、含各種金屬之膜)、光電元件之基板(包括含金屬酸化物之膜、含各種金屬之膜)。
第2態樣之樹脂組合物之製造方法包括選自由如下步驟所組成之群中之至少一個步驟:使選自由矽化合物之水解物、縮合物及水解縮合物所組成之群中之至少一種與具有聚矽烷結構之樹脂如上述般進行水解縮合反應而獲得上述(I)聚矽烷-聚矽氧烷樹脂之步驟,所述矽化合物選自由上述通式(A-1-1)~(A-1-4)所表示之矽化合物所組成之群中之至少一種;以及將具有上述聚矽烷結構之樹脂(II-1)與具有上述聚矽氧烷結構之樹脂(II-2)進行混合。
作為具有聚矽烷結構之樹脂,較佳為選自由上述通式(A-2-1)及(A-2-2)所表示之聚矽烷化合物所組成之群中之至少一種。
上述具有聚矽烷結構之樹脂(II-1)與上述具有聚矽氧烷結構之樹脂(II-2)之混合比只要無損本發明之效果,則並無特別限制,具有聚矽烷結構(II-1)之樹脂相對於具有聚矽氧烷結構(II-2)之樹脂之混合比只要無損本發明之效果,則並無特別限制,較佳為0.01質量倍~5質量倍,更佳為0.05質量倍~1質量倍。
又,於第2態樣之樹脂組合物之製造方法中,可較佳地使用上述之選自由萜烯化合物、以及含環狀骨架之乙酸酯化合物(其中,上述萜烯化合物除外)所組成之群中之至少一種溶劑,所述萜烯化合物具有選自由羥基及乙醯氧基所組成之群中之至少一種基。
於第2態樣中,較佳為包括於鹼性條件下對選自由上述通式(A-2-1)及(A-2-2)所表示之聚矽烷化合物所組成之群中之至少一種聚矽烷化合物進行處理。
於上述聚矽烷-聚矽氧烷樹脂之製造中,於使之與選自由矽化合物之水解物、縮合物及水解縮合物所組成之群中之至少一種進行水解縮合反應之前,於鹼性條件下對上述聚矽烷化合物進行處理(例如,精製處理),藉此,能夠去除鹵素原子(例如,鹵素離子(氯化物離子等)、聚矽烷化合物中殘留之Si-Cl)等夾雜物,又,能夠促進聚矽烷化合物之低分子量化,使上述聚矽烷化合物之溶劑溶解性提昇,所述矽化合物選自由上述通式(A-1-1)~(A-1-4)所表示之矽化合物所組成之群中之至少一種。
藉此,能夠將上述聚矽烷化合物較佳地應用於聚矽烷-聚矽氧烷樹脂之製造。
此處,作為用於上述於鹼性條件下進行之處理之溶劑,能夠使用各種溶劑,例如,能夠使用選自上述(S1)所表示之乙酸環烷基酯、苯、甲苯、二甲苯等烴系溶劑、丙二醇單甲醚、丙二醇單乙醚等二醇系溶劑、二乙基醚、二異丙醚、二丁醚、四氫呋喃、1,4-二烷等醚系溶劑、丙酮、甲基乙基酮、甲基異丁基酮、甲基戊基酮、環戊酮、環己酮等酮系溶劑、乙醇、異丙基醇、丁醇等醇系溶劑中之一種以上。
又,上述之選自由萜烯化合物以及含環狀骨架之乙酸酯化合物(其中,上述萜烯化合物除外)所組成之群中之至少一種溶劑亦能夠較佳地用作上述於鹼性條件下進行之處理所使用之溶劑,所述萜烯化合物具有選自由羥基及乙醯氧基所組成之群中之至少一種基。
又,作為使用之鹼,只要為呈現出鹼性之化合物,則能夠使用各種化合物,例如,能夠使用氫氧化鈉、氫氧化鉀、氫氧化鋇、氨、氫氧化四甲基銨、碳酸鈉、碳酸氫鈉、碳酸鉀、氫化鋰、氫化鈉、氫化鉀、氫化鈣等無機鹼類、甲基鋰、正丁基鋰、氯化甲基鎂、溴化乙基鎂等烷基金屬類、包括Cr、Ga、Fe(Fe(II)、Fe(III))、Cd、Co、Ni、Sn、Pb、Cu(Cu(II)、Cu(I))、Ag、Pd、Pt、Au等金屬(或金屬離子)之金屬鹵化物、甲氧化鈉、乙氧化鈉、第三丁氧化鉀等烷氧化物類、三乙基胺、二異丙基乙基胺、N,N-二甲基苯胺、吡啶、4-二甲基胺基吡啶、二氮雜雙環十一烯(DBU)等有機鹼類。反應溫度較佳為-50℃~溶劑之沸點左右,進而較佳為室溫~100℃。
第3態樣之膜形成方法係使用第1態樣之樹脂組合物。
作為使用第1態樣之樹脂組合物形成膜之方法,只要無損本發明之效
果,則並無特別限制,可列舉如下方法:視需要於任意之支持體上,使用輥式塗佈機、反向塗佈機、棒式塗佈機等接觸轉印型塗佈裝置或旋轉器(旋轉式塗佈裝置)、淋幕式平面塗裝機等非接觸型塗佈裝置進行塗佈。
作為支持體,並無特別限制,例如,可列舉玻璃基板、石英基板、透明或半透明之樹脂基板(例如,聚碳酸酯、聚對苯二甲酸乙二酯、聚醚碸、聚醯亞胺、聚醯胺醯亞胺等耐熱性之材料等)、金屬、矽基板等。
亦可為半導體基板、液晶顯示器、有機發光顯示器(OLED)、電泳顯示器(電子紙)、觸控面板、彩色濾光片、背光裝置等顯示器材料之基板(包括含金屬酸化物之膜、含各種金屬之膜)、太陽電池之基板(包括含金屬酸化物之膜、含各種金屬之膜)、光感測器等光電轉換元件之基板(包括含金屬酸化物之膜、含各種金屬之膜)、光電元件之基板(包括含金屬酸化物之膜、含各種金屬之膜)等各種基板。
支持體之厚度並無特別限定,能夠根據圖案形成體之使用態樣適當選擇。
較佳為對上述塗佈後之塗膜進行乾燥(預烤)。乾燥方法並無特別限定,例如,可列舉(1)利用加熱板以80~120℃、較佳為90~100℃之溫度使之乾燥60~120秒鐘之方法,(2)於室溫下放置數小時~數天之方法,(3)於熱風加熱器或紅外線加熱器中放數十分鐘~數小時以將溶劑去除之方法等。
上述乾燥後之塗膜可照射紫外線、準分子雷射光等活性能量線進行曝光,亦可不曝光。照射之能量線量並無特別限制,例如,可列舉30~2000mJ/cm2左右。曝光步驟可代替下述燒成步驟或與燒成步驟一起進行。又,於曝光步驟中,例如,亦可將所形成之塗佈膜選擇性地曝光,於
包含選擇性曝光步驟之情形時,亦可包含顯影步驟。又,例如,亦可對所形成之塗佈膜進行壓印光刻。於進行壓印光刻之情形時,例如,可列舉包括如下步驟之方法:於基板上塗佈第1態樣之樹脂組合物而形成塗佈膜之步驟;對塗佈膜按壓形成有特定之圖案之凹凸結構之鑄模之步驟;以及曝光步驟。
曝光步驟係於鑄模被按壓於塗佈膜之狀態下,對包括第1態樣之樹脂組合物之塗佈膜進行。利用曝光進行硬化後,將上述鑄模剝離,藉此,能夠對應於鑄模之形狀,獲得經圖案化之第3態樣之膜。
上述乾燥後、曝光後或顯影後之塗膜就提高膜物性之方面而言,較佳為進行燒成(後烘烤)。
燒成溫度亦依據下層基板或使用用途,例如,為200~1000℃之範圍,較佳為200℃~500℃,更佳為200~250℃。燒成氣體氛圍並無特別限定,可為氮氣氛圍或氬氣氛圍等惰性氣體氛圍下、真空下、或減壓下。亦可為大氣下,亦可適當控制氧濃度。燒成時間可適當變更,為10分鐘~120分鐘左右。
藉由第4態樣之方法形成之膜之厚度較佳為10nm~10000nm,更佳為50~5000nm,進而較佳為100~3000nm。
第4態樣之硬化物係第1態樣之樹脂組合物之硬化物。
第4態樣之硬化物較佳為保護上述各種基板(包括含金屬酸化物之膜、含各種金屬之膜)之保護膜。
於硬化物為膜之情形時,厚度較佳為10~3000nm,更佳為50~
1500nm,進而較佳為100~1000nm。
以下,基於實施例更詳細地說明本發明,但本發明並不受該等實施例之限定。
於安裝有三向旋塞之內容積1000ml之圓形燒瓶中,加入粒狀(粒徑20~1000μm)之鎂25.0g、無水氯化鋰21.4g、第2氯化鉄4.1g,於50℃下加熱減壓至1mmHg(=133kPa),對反應混合物進行乾燥後,將乾燥氬氣導入至反應器內,添加預先利用鈉-二苯甲酮ketyl乾燥過之四氫呋喃500ml,於室溫下攪拌約30分鐘。於該反應混合物中,添加預先藉由蒸餾精製過之甲基苯基二氯矽烷105.8g(0.50mol),於20℃下攪拌約18小時。反應結束後,添加四氫呋喃300ml後,藉由減壓過濾將因反應生成之氯化鎂、剩餘之鎂去除。將濾液利用純水200ml洗淨10次,利用無水硫酸鎂對四氫呋喃相進行乾燥後,將四氫呋喃蒸餾去除,藉此,獲得甲基苯基矽烷聚合物50g。
將所獲得之甲基苯基矽烷聚合物溶解於乙酸環己酯300g中,進而混合以10質量%之比率包含氯化銅(II)(CuCl2)之氯化銅水溶液200g,並攪拌60分鐘,之後,將包含聚苯碳矽炔之有機相與包含氯化銅之水相分離。然後,將包含聚苯碳矽炔之有機相利用純水200ml洗淨3次後,將溶劑成分蒸餾去除,而獲得甲基苯基矽烷聚合物48g。將該聚合物(聚矽烷樹脂、Mw2000)作為聚合物(A1-1)。
其次,於乙酸環己酯190g及70質量%硝酸1g之混合物中,添加甲基
三甲氧基矽烷17.0g、苯基三甲氧基矽烷5.0g、四甲氧基矽烷45.7g、及聚合物(A1-1)6g之混合物,使之保持於40℃進行水解縮合12小時。反應結束後,添加乙酸環己酯300g,將副產醇及過量之水藉由減壓蒸餾去除,而獲得聚矽烷-聚矽氧烷樹脂(A3-1)(Mw5500)之乙酸環己酯溶液300g。
作為具有聚矽氧烷結構之樹脂,使用下述式所表示之聚矽氧烷樹脂(A2-1)。下述式中,組成比為莫耳比。質量平均分子量(Mw)為2900。
將表1中記載之各成分混合,利用孔徑0.1μm之氟樹脂製之過濾器進行過濾,藉此,製備各例之樹脂組合物。
於晶圓上,使用旋轉塗佈機塗佈表1所示之樹脂組合物,而形成塗佈膜。將上述塗佈膜以100℃預烤2分鐘後,使用立式烘烤爐(TS8000MB,東京應化工業股份有限公司製造),將塗佈膜於350℃下燒成30分鐘,而獲得膜厚約100nm之含矽被膜。
對任意64處測定膜厚之面內分佈,並按照下述基準進行評價。
○:面內分佈為100nm±5nm以下。
×:面內分佈超過100nm±5nm。
將結果表示於表1。
松油醇C(註冊商標):Nippon Terpene Chemicals公司製造
根據表1所示之結果可知,樹脂為聚矽烷-聚矽氧烷樹脂但溶劑非本發明中規定之溶劑之比較例1係面內均勻性較差。
另一方面,可知,樹脂為選自由(I)聚矽烷樹脂與聚矽氧烷樹脂之混合物、及(II)聚矽烷-聚矽氧烷樹脂所組成之群中之至少一種,且溶劑為本發明中規定之溶劑之實施例1~4均面內均勻性優異。
Claims (7)
- 一種樹脂組合物,其係包括含矽樹脂成分及溶劑者,且上述含矽樹脂成分包含下述(I):(I)具有聚矽烷結構(I-1)及聚矽氧烷結構(I-2),且聚矽烷結構(I-1)與聚矽氧烷結構(I-2)連結之聚矽烷-聚矽氧烷樹脂,上述溶劑包含選自由萜烯化合物、以及含環狀骨架之乙酸酯化合物(其中,上述萜烯化合物除外)所組成之群中之至少一種溶劑,所述萜烯化合物具有選自由羥基及乙醯氧基所組成之群中之至少一種基,上述聚矽氧烷結構(I-2)包含選自由下述通式(A-1-1)~(A-1-4)所表示之矽化合物所組成之群中之至少一種矽化合物之水解縮合結構:R1R2R3SiX1 (A-1-1) R4R5SiX2 2 (A-1-2) R6SiX3 3 (A-1-3) SiX4 4 (A-1-4)(上述通式中,X1~X4分別獨立地為水解性基,R1、R2、R3、R4、R5及R6分別獨立地為氫原子或有機基,該有機基中之氫原子亦可經鹵素原子取代),上述聚矽烷結構(I-1)包含如下結構,所述結構源自選自由下述通式(A-2-1)及(A-2-2)所表示之聚矽烷化合物所組成之群中之至少一種:(R7R8R9Si)a1(R10R11Si)a2(R12Si)a3(Si)a4 (A-2-1)(上述通式中,R7、R8、R9、R10、R11及R12分別獨立地為氫原子、羥 基或有機基,a1、a2、a3及a4分別獨立地為莫耳分率,且a1+a2+a3+a4=1,0≦a1≦1,0≦a2≦1,0≦a3≦1及0≦a4≦1),
- 一種樹脂組合物,其係包括含矽樹脂成分及溶劑者,且上述含矽樹脂成分包含選自由下述(I)及(II)所組成之群中之至少一種:(I)具有聚矽烷結構(I-1)及聚矽氧烷結構(I-2)之聚矽烷-聚矽氧烷樹脂(II)具有聚矽烷結構(II-1)之樹脂與具有聚矽氧烷結構(II-2)之樹脂之混合物,上述溶劑包含萜烯化合物,所述萜烯化合物具有選自由羥基及乙醯氧基所組成之群中之至少一種基,上述聚矽氧烷結構(I-2)及(II-2)分別獨立地包含選自由下述通式(A-1-1)~(A-1-4)所表示之矽化合物所組成之群中之至少一種矽化合物之水解縮合結構:R1R2R3SiX1 (A-1-1) R4R5SiX2 2 (A-1-2) R6SiX3 3 (A-1-3) SiX4 4 (A-1-4)(上述通式中,X1~X4分別獨立地為水解性基,R1、R2、R3、R4、R5及R6分別獨立地為氫原子或有機基,該有機基中之氫原子亦可經鹵素原子取代),上述聚矽烷結構(I-1)及(II-1)分別獨立地包含如下結構,所述結構源自選自由下述通式(A-2-1)及(A-2-2)所表示之聚矽烷化合物所組成之群中之至少一種:(R7R8R9Si)a1(R10R11Si)a2(R12Si)a3(Si)a4 (A-2-1)(上述通式中,R7、R8、R9、R10、R11及R12分別獨立地為氫原子、羥基或有機基,a1、a2、a3及a4分別獨立地為莫耳分率,且a1+a2+a3+a4=1,0≦a1≦1,0≦a2≦1,0≦a3≦1及0≦a4≦1),
- 如請求項1之樹脂組合物,其中上述連結之部分為醚鍵。
- 一種如請求項1至4中任一項之組合物之製造方法,其包括選自由如下步驟所組成之群中之至少一個步驟:使選自由矽化合物以及上述矽化合物之水解物、縮合物及水解縮合物所組成之群中之至少一種與具有聚矽烷結構之樹脂進行水解縮合反應而獲得聚矽烷-聚矽氧烷樹脂之步驟,所述矽化合物選自由下述通式(A-1-1)~(A-1-4)所表示之矽化合物所組成之群中之至少一種;以及將具有聚矽烷結構之樹脂與具有聚矽氧烷結構之樹脂進行混合之步驟,R1R2R3SiX1 (A-1-1) R4R5SiX2 2 (A-1-2) R6SiX3 3 (A-1-3) SiX4 4 (A-1-4)(上述通式中,X1~X4分別獨立地為水解性基,R1、R2、R3、R4、R5及R6分別獨立地為氫原子或有機基,該有機基中之氫原子亦可經鹵素原子取代)。
- 一種膜形成方法,其使用如請求項1至4中任一項之組合物。
- 一種硬化物,其係如請求項1至4中任一項之組合物之硬化物。
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