TWI764661B - 處理矽晶圓以具有內部去疵及閘極氧化物完整性良率之方法 - Google Patents

處理矽晶圓以具有內部去疵及閘極氧化物完整性良率之方法

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TWI764661B
TWI764661B TW110112520A TW110112520A TWI764661B TW I764661 B TWI764661 B TW I764661B TW 110112520 A TW110112520 A TW 110112520A TW 110112520 A TW110112520 A TW 110112520A TW I764661 B TWI764661 B TW I764661B
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wafer
silicon wafer
microns
oxygen
front side
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TW110112520A
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Chinese (zh)
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TW202129094A (zh
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李榮中
柳在祐
金昞天
羅伯特 J 法斯特
朴淳成
金泰勳
池浚煥
卡瑞喜瑪 瑪莉 哈德森
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新加坡商太陽愛迪生半導體有限公司
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching

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  • Engineering & Computer Science (AREA)
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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
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  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Thermal Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
TW110112520A 2016-12-28 2017-12-27 處理矽晶圓以具有內部去疵及閘極氧化物完整性良率之方法 TWI764661B (zh)

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US201662439621P 2016-12-28 2016-12-28
US62/439,621 2016-12-28

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TWI764661B true TWI764661B (zh) 2022-05-11

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TW106145848A TWI724266B (zh) 2016-12-28 2017-12-27 處理矽晶圓以具有內部去疵及閘極氧化物完整性良率之方法

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EP (2) EP3653761B1 (enExample)
JP (2) JP7110204B2 (enExample)
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CN (2) CN114093764B (enExample)
SG (1) SG10201913071XA (enExample)
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TWI768957B (zh) 2021-06-08 2022-06-21 合晶科技股份有限公司 複合基板及其製造方法
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JP7658332B2 (ja) * 2021-11-04 2025-04-08 株式会社Sumco シリコンウェーハおよびエピタキシャルシリコンウェーハ
TWI854344B (zh) * 2021-11-04 2024-09-01 日商Ｓｕｍｃｏ股份有限公司 矽晶圓及磊晶矽晶圓
CN116259538B (zh) * 2023-03-30 2023-11-17 苏州龙驰半导体科技有限公司 提高SiC材料栅氧界面态质量的方法及其应用

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