TWI757587B - 半導體裝置 - Google Patents

半導體裝置 Download PDF

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TWI757587B
TWI757587B TW108105866A TW108105866A TWI757587B TW I757587 B TWI757587 B TW I757587B TW 108105866 A TW108105866 A TW 108105866A TW 108105866 A TW108105866 A TW 108105866A TW I757587 B TWI757587 B TW I757587B
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semiconductor
chip
spacer
wafer
substrate
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TW108105866A
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TW202006907A (zh
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内田祐樹
渡部武志
早川健
天野彩那
菅生悠樹
池部礼淑
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日商鎧俠股份有限公司
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Abstract

根據一實施例之一種半導體裝置包含一基板及提供於該基板上方之一第一半導體晶片。一第二半導體晶片提供於該第一半導體晶片上方。相對於與該基板之一安裝表面正交之一方向，一間隔物晶片提供於該第一半導體晶片與該第二半導體晶片之間，該間隔物晶片由一第一樹脂材料製成。一第一黏著劑材料提供於該間隔物晶片與該基板或該第一半導體晶片之間。一第二黏著劑材料提供於該間隔物晶片與該第二半導體晶片之間。一第二樹脂材料覆蓋該等第一及第二半導體晶片以及該間隔物晶片。

Description

半導體裝置
本發明之實施例係關於半導體裝置。
在例如NAND快閃記憶體之半導體裝置之一些封裝中，例如記憶體晶片及控制器晶片之複數個半導體晶片藉由使用FOD (裝置上膜(Film On Device))技術堆疊。在FOD技術中，間隔物晶片有時用於使得下部層半導體晶片(下部層晶片)能夠嵌入於黏著劑膜中，即使上部層晶片係經縮減的亦係如此。
然而，由與半導體基板之材料相同之材料製成且不具有圖案的鏡像晶片被用作間隔物晶片並且其表面處於鏡像狀態。因此，間隔物晶片對密封半導體晶片之模製樹脂之黏著力較低並且在熱及潮濕的環境中存在脫離發生於間隔物晶片與模製樹脂之間的界面處的風險。此趨勢降低了半導體裝置之可靠性。
另外，可想像的是間隔物晶片塗覆有聚醯亞胺以增強對模製樹脂之黏著力。然而，聚醯亞胺之使用增加了製造成本。
根據一實施例之一種半導體裝置包含一基板及位於該基板上方之一第一半導體晶片。一第二半導體晶片位於該第一半導體晶片上方。相對於與該基板之一安裝表面正交之一方向，一間隔物晶片位於該第一半導體晶片與該第二半導體晶片之間，該間隔物晶片由一第一樹脂材料製成。一第一黏著劑材料位於該間隔物晶片與該基板或該第一半導體晶片之間。一第二黏著劑材料位於該間隔物晶片與該第二半導體晶片之間。一第二樹脂材料覆蓋該等第一及第二半導體晶片以及該間隔物晶片。
根據本發明，可改良該半導體裝置之可靠性。
現在將參考附圖來解釋實施例。本發明不限於實施例。在實施例中，術語「上部方向」或「下部方向」偶爾不同於基於重力加速度方向之上部方向或下部方向。在本說明書及圖式中，與在前述圖式中描述之元件相同的元件由相同的參考標號表示並且視需要省略其詳細解釋。 (第一實施例)
圖1係根據第一實施例繪示半導體裝置1之組態之實例的剖視圖。根據本實施例之半導體裝置1係表面黏著半導體封裝，並且可為例如BGA (球狀柵格陣列(Ball Grid Array)封裝)、MAP (模製陣列封裝(Mold Array Package))或LGA (平台柵格陣列(Land Grid Array )封裝)。半導體裝置1亦可為半導體記憶體裝置，例如，NAND快閃記憶體。半導體裝置1包括基板10、黏著劑材料20、控制器晶片30、黏著劑材料40、間隔物晶片50、黏著劑材料60、記憶體晶片70、模製樹脂80及金屬凸塊90。
舉例而言，基板10係多層佈線基板，其包括堆疊以整合在一起之單個或複數個絕緣層(第三樹脂材料) 16以及單個或複數個佈線層17。例如玻璃環氧樹脂或玻璃BT樹脂(雙馬來醯亞胺-三嗪樹脂)之樹脂材料被用作絕緣層16。佈線層17提供於基板10中或提供於基板10之前表面及後表面上且電連接至接合墊(未圖示)。例如銅之低電阻導電材料被用作佈線層17。基板10之平面形狀不受特定限制並且可為實質上矩形或實質上正方形。
阻焊劑遮罩(未圖示)提供於基板10之後表面上。阻焊劑遮罩並不提供於金屬凸塊90形成於其中之區上，並且金屬凸塊90電連接至自阻焊劑遮罩中曝露之佈線層17。此組態使得金屬凸塊90能夠充當外部連接端子並且連接至其他半導體裝置。舉例而言，例如焊料之導電材料被用作金屬凸塊90。
作為第一半導體晶片之控制器晶片30藉由黏著劑材料(DAF(晶粒附接膜(Die Attachment Film))) 20黏附且固定至基板10之前表面上。控制器晶片30係控制記憶體晶片70之半導體晶片並且構成控制電路之半導體元件(例如，電晶體)提供於控制器晶片30之前表面上。控制器晶片30具有連接至內部控制電路之接合墊32並且藉由金屬導線35電連接至基板10之接合墊(未圖示)。控制器晶片30選擇對其執行寫入或讀取資料之記憶體晶片70，或執行將資料寫入至所選擇之記憶體晶片70中或自所選擇之記憶體晶片70中讀取資料。複數個控制器晶片30可置放於基板10上。
黏著劑材料20提供於基板10與控制器晶片30之間並且使得控制器晶片30黏附至基板10。舉例而言，由熱固性樹脂製成之黏著劑膜(DAF)被用作黏著劑材料20。
間隔物晶片50提供於黏著劑材料40上並且配置於基板10及控制器晶片30上方，其方式為使得藉由黏著劑材料40防止接觸基板10及控制器晶片30。提供電連接至控制器晶片30或記憶體晶片70之任何內部佈線並不提供於間隔物晶片50中。熱固性樹脂材料(第一樹脂材料)被用作間隔物晶片50。當在加熱及回焊之後經冷卻及固化時，熱固性樹脂具有穩定的尺寸及形狀。因此，藉由熱固性樹脂作為間隔物晶片50之使用，間隔物晶片50在被加熱時變得易於處理並且在被冷卻時可穩定地支撐記憶體晶片70。
在本實施例中，間隔物晶片50之樹脂材料(第一樹脂材料)係與作為第二樹脂材料之模製樹脂80相同的材料。因為間隔物晶片50由與模製樹脂80相同的材料製成，所以增強了間隔物晶片50與模製樹脂80之間的黏附性並且可抑制在間隔物晶片50與模製樹脂80之間發生脫離。舉例而言，間隔物晶片50之樹脂材料係環氧樹脂組合物，該環氧樹脂組合物具有環氧樹脂作為主要組分並且含有酚醛樹脂及二氧化矽填充物。
作為第一黏著劑材料之黏著劑材料40提供於控制器晶片30與間隔物晶片50之間且提供於基板10與間隔物晶片50之間，並且使得間隔物晶片50黏附且固定至基板10及控制器晶片30上。黏著劑材料40亦覆蓋控制器晶片30、金屬導線35及類似者以保護此等部件。舉例而言，由熱固性樹脂製成之黏著劑膜(DAF)被用作黏著劑材料40。舉例而言，環氧樹脂、酚醛樹脂、丙烯酸類樹脂及二氧化矽填充物之組合物被用作黏著劑材料40。黏著劑材料40之厚度係自5微米至150微米之值。黏著劑材料40係在與間隔物晶片50相比較低之溫度下熔化之材料。因此，黏著劑材料40可經回焊以藉由黏著劑材料40嵌入控制器晶片30、金屬導線35及類似者而不熔化間隔物晶片50。
作為第二黏著劑材料之黏著劑材料60提供於間隔物晶片50與記憶體晶片70之間並且使得記憶體晶片70黏附至間隔物晶片50。舉例而言，由熱固性樹脂製成之黏著劑膜(DAF)被用作黏著劑材料60。
作為第二半導體晶片之記憶體晶片70提供於黏著劑材料60上並且藉由黏著劑材料60固定至間隔物晶片50上。舉例而言，記憶體晶片70係各自具有NAND快閃記憶體之半導體晶片，並且二維或三維記憶體單元陣列提供於半導體基板之前表面上。記憶體晶片70具有連接至內部電路之接合墊74，並且接合墊74藉由金屬導線75電連接至基板10之接合墊(未圖示)。藉由此組態，記憶體晶片70經由金屬導線75及35以及基板10之內部佈線電連接至控制器晶片30，並且可在控制器晶片30之控制下操作。雖然未圖示，但金屬導線75可將下部層記憶體晶片70以及最頂部層記憶體晶片70連接至基板10。替代地，下部層記憶體晶片70可經由通孔而彼此電連接。在此情況下，無需藉由金屬導線75執行下部層記憶體晶片70之導線接合。
在本實施例中，記憶體晶片70堆疊於間隔物晶片50上。在此情況下，記憶體晶片70中之每一者藉由黏著劑材料60黏附至間隔物晶片50或位於記憶體晶片70之正下方之記憶體晶片70。
模製樹脂80提供於基板10上並且覆蓋控制器晶片30、間隔物晶片50、記憶體晶片70以及金屬導線35及75。模製樹脂80保護控制器晶片30、間隔物晶片50、記憶體晶片70以及金屬導線35及75免受半導體裝置1之外部的影響。
圖2係繪示控制器晶片30、間隔物晶片50及記憶體晶片70之外部形狀之實例的平面視圖。如圖2中所繪示，當自基板10之安裝表面上方查看時，間隔物晶片50之外部邊緣與控制器晶片30及記憶體晶片70之外部邊緣相比位於外側上。亦即，相對於與基板10之安裝表面正交之方向，間隔物晶片50提供於控制器晶片30與記憶體晶片70之間，並且在基板10之安裝區域中大於控制器晶片30及記憶體晶片70。間隔物晶片50之外部形狀可實質上類似於控制器晶片30或記憶體晶片70之外部形狀。
當記憶體晶片70具有等同於間隔物晶片50之大小時，它足以在記憶體晶片70之後表面與控制器晶片30或基板10之間提供黏著劑材料40並且藉由黏著劑材料40嵌入控制器晶片30及金屬導線35而不提供間隔物晶片50。然而，若由於記憶體晶片70之縮減記憶體晶片70之大小變得接近控制器晶片30之大小，則黏附至記憶體晶片70之後表面上之黏著劑材料40之大小亦減小。因此，控制器晶片30及金屬導線35無法充分地由黏著劑材料40覆蓋。
與其相比，根據本實施例之間隔物晶片50之大小大於控制器晶片30及記憶體晶片70之大小，並且間隔物晶片50之外部邊緣與控制器晶片30及記憶體晶片70之外部邊緣相比位於外側上。因此，可維持黏附至間隔物晶片50上之黏著劑材料(DAF) 40之大小以藉由黏著劑材料40充分地覆蓋控制器晶片30及金屬導線35之整個部分。
若構成控制器晶片30或記憶體晶片70之鏡樣半導體基板(例如，矽基板)被用作間隔物晶片，則間隔物晶片在對模製樹脂80之黏附性上係相對低的並且輕易地自模製樹脂80脫離。
與其相比，間隔物晶片50由與模製樹脂80相同的樹脂材料製成。因此，間隔物晶片50與模製樹脂80之間的黏附性係相對高的並且不大可能發生脫離。因此，可增強半導體裝置1之可靠性。
根據本實施例不必將例如聚醯亞胺之昂貴的大分子有機材料施加至間隔物晶片50上。因此，根據本實施例，可抑制製造成本之增加。
接下來解釋根據本實施例之間隔物晶片50之製造方法。
圖3A至圖3F係繪示根據第一實施例之間隔物晶片之製造方法之實例的圖式。
首先，如圖3A中所繪示，形成具有任何厚度之柱狀樹脂材料45。樹脂材料45可使用模具或類似者模製，或者可藉由施加至例如半導體晶圓之圓形部件上形成。樹脂材料45之直徑較佳地具有等同於半導體晶圓之大小的大小。此組態使得樹脂材料45能夠藉由與用於半導體晶圓之切割程序相同的程序來單粒化。較佳的是樹脂材料45係與模製樹脂80相同的熱固性樹脂。因此，樹脂材料45可經加熱以在用於樹脂材料45之模製程序中模製。
接下來，使用拋光裝置拋光圖3A中繪示之柱狀樹脂材料45以使得樹脂材料45具有如圖3B中所繪示之所要厚度。
隨後，黏著劑材料(DAF) 40被施加至樹脂材料45之後表面，如圖3C中所繪示。
接下來，切割帶(在圖3D中未繪示)被施加至黏著劑材料40並且藉由切割刀片DB將樹脂材料45切成間隔物晶片50之大小，如圖3D中所繪示。此時，切割刀片DB足以在厚度之中間切割樹脂材料45及黏著劑材料40。
隨後，切割帶120藉由推送部件140自下方向上推送以延展(擴展)切割帶120，如圖3E中所繪示。因此，樹脂材料45連同切割帶120被向外拉伸。此時，樹脂材料45及黏著劑材料40沿切割線斷裂以單粒化成複數個間隔物晶片50。
樹脂材料45及黏著劑材料40可藉由任何切割方法單粒化，例如，刀片切割方法、擴展方法、雷射切割方法，或鋸切方法。
隨後，如圖3F中所繪示之間隔物晶片50藉由晶粒接合裝置(未圖示)拾起並且安裝於基板10上，該基板具有安裝於其上之控制器晶片30。在此情況下，間隔物晶片50置放於控制器晶片30及金屬導線35連同黏著劑材料40 (在圖3F中未圖示)上並且被加熱及加壓。此時，間隔物晶片50在間隔物晶片50並不回焊且黏著劑材料40回焊之溫度下加熱。因此，黏著劑材料40回焊以嵌入控制器晶片30及金屬導線35並且黏附至基板10，如圖1中所繪示。
之後，各自具有黏著劑材料60之記憶體晶片70堆疊於間隔物晶片50上，並且記憶體晶片70及基板10與金屬導線75接合。另外，控制器晶片30、間隔物晶片50、記憶體晶片70、金屬導線75及類似者藉由模製樹脂80密封並且金屬凸塊90形成於基板10之後側上。圖1中所繪示之封裝結構係以此方式獲得的。
以此方式，根據本實施例之間隔物晶片50可藉由與用於半導體晶圓之切割程序相同的程序形成。
此外，間隔物晶片50由與模製樹脂80相同的樹脂材料形成。因此，間隔物晶片50與模製樹脂80之間的黏附性係相對高的並且不大可能發生脫離。
因為間隔物晶片50由樹脂材料形成，所以不需要施加例如聚醯亞胺之任何昂貴大分子有機材料。因此，可抑制製造成本之增加。 (第一修改)
當形成在圖3A中繪示之樹脂材料45時在樹脂材料45形成為具有在圖3B中繪示之拋光之後的厚度的情況下，可省略在圖3A中繪示之用於樹脂材料45之形成程序。在此情況下，樹脂材料45足以藉由將樹脂材料施加至作為半導體晶圓之圓形部件上形成。替代地，根據第一修改之樹脂材料45可使用模具或類似者模製，類似於在圖3A中繪示之樹脂材料45。
之後，執行參考圖3C至圖3E解釋之程序，由此形成於圖3F中繪示之間隔物晶片50。並且以此方式，可形成與在第一實施例中之間隔物晶片相同的間隔物晶片50。 (第二修改)
當形成樹脂材料45時樹脂材料45亦可直接地形成於黏著劑材料40上。舉例而言，施加樹脂材料45以具有在薄片狀黏著劑材料40上之所要厚度。接下來，黏著劑材料40及樹脂材料45經切割以具有等同於半導體晶圓之大小的大小。包括圖3C中繪示之黏著劑材料40及樹脂材料45之堆疊主體以此方式形成。
之後，執行參考圖3D及圖3E解釋之程序，由此形成在圖3F中繪示之間隔物晶片50。並且以此方式，可形成與在第一實施例中之間隔物晶片相同的間隔物晶片50。 (第三修改)
在第一實施例中，在黏著劑材料40黏附至如圖3C中所繪示之樹脂材料45之後，執行如圖3D及圖3E中所繪示之切割及擴展。
與其相比，在第三修改中，縫隙46提前提供於樹脂材料45之切割線DL上，如圖4中所繪示。圖4係繪示對應於樹脂材料45之切割線DC之部分的剖視圖。縫隙46形成為達到樹脂材料45之厚度之中間位置。黏著劑材料40黏附至具有縫隙46之樹脂材料45之後表面。切割帶進一步黏附至樹脂材料45及黏著劑材料40，並且樹脂材料45及黏著劑材料40在切割帶上擴展。因此，樹脂材料45及黏著劑材料40沿縫隙46斷裂以單粒化成間隔物晶片50。縫隙46可在與樹脂材料45藉由模具模製之相同時間提供。此程序使得樹脂材料45能夠藉由擴展方法單粒化，而無需藉由切割刀片切割樹脂材料45。並且在第三修改中，可形成與在第一實施例中之間隔物晶片相同的間隔物晶片50。 (第四修改)
在第一實施例中，間隔物晶片50之樹脂材料(第一樹脂材料)係與模製樹脂80相同之樹脂材料。)然而，間隔物晶片50可為類似於模製樹脂80之樹脂材料或與基板10之絕緣層16相同或類似之樹脂材料。舉例而言，間隔物晶片50之樹脂材料可為具有環氧樹脂作為主要組分並且含有酚醛樹脂、丙烯酸類樹脂、二氧化矽填充物、氧化鈦填充物及玻璃布之材料。舉例而言，當玻璃布包括於環氧樹脂材料中時，間隔物晶片50之樹脂材料變為玻璃環氧樹脂。以此方式，即使間隔物晶片50係類似於模製樹脂80之樹脂材料或與半導體10之絕緣層16相同或類似之樹脂材料，間隔物晶片50至模製樹脂80之黏附性亦得到改良並且半導體裝置之可靠性亦可增強。當間隔物晶片50係玻璃環氧樹脂基板時，銅箔或阻焊劑遮罩可提供於玻璃環氧樹脂基板之前表面及/或後表面上。半導體裝置之識別標記可藉由在玻璃環氧樹脂基板之前表面及/或後表面上蝕刻呈現(壓印)。
此外，舉例而言，在固化之後間隔物晶片50可具有自10 GPa至50 GPa之彈性模數、自3 ppm/℃至20 ppm/℃之熱膨脹係數、自80℃至320℃之玻璃轉化溫度，以及自5微米至300微米之厚度。具有此等特性之間隔物晶片50具有此類程度之硬度使得它可在單粒化之後被拾起並且藉由晶粒接合置放於基板10上，並且可充當用於記憶體晶片70之支撐主體。 (第二實施例)
圖5係根據第二實施例繪示半導體裝置2之組態之實例的剖視圖。半導體裝置2進一步包括支撐柱51及53。作為第一支撐柱之支撐柱51提供於間隔物晶片50與基板10之間。支撐柱51充當支撐間隔物晶片50以防止間隔物晶片50之端部朝向基板10下降之支撐柱。作為第二支撐柱之支撐柱53提供於間隔物晶片50與控制器晶片30之間。支撐柱53充當支撐間隔物晶片50以防止間隔物晶片50之中心部分朝向基板10下降之支撐柱。支撐柱51及53由與間隔物晶片50之樹脂材料相同的樹脂材料(第一樹脂材料)製成。因此，改良支撐柱51及53與模製樹脂80之間的黏附性並且可抑制支撐柱51及53與模製樹脂80之間的脫離。
在第二實施例中，提供黏著劑材料40以使得間隔物晶片50黏附至支撐柱51及53，且並不覆蓋控制器晶片30及金屬導線35。亦即，支撐柱53及模製樹脂80形成於黏著劑材料40與控制器晶片30之間，並且控制器晶片30及金屬導線35由模製樹脂80覆蓋。
圖6係根據第二實施例繪示控制晶片30、間隔物晶片50以及支撐柱51及53之置放的平面視圖。當自基板10之安裝表面上方查看時，支撐柱51具有延長之形狀以沿間隔物晶片50之兩個相對側延伸。支撐柱51置放於控制器晶片30之外部上。當自基板10之安裝表面上方查看時，支撐柱53具有延長之形狀以沿控制器晶片30之兩個相對側延伸。支撐柱53置放於控制器晶片30之內部上。
模製樹脂80自並不提供支撐柱51及53之間隔物晶片50之側面穿透並且密封間隔物晶片50及基板10或控制器晶片30之間的空間。支撐柱51及53彼此實質上平行地延伸。因此，支撐柱51及53極少干擾模製樹脂80之流動，並且模製樹脂80被輕易地倒入於間隔物晶片50之下的空間中。
根據第二實施例之半導體裝置2之其他組態可與第一實施例之對應組態相同。因此，第二實施例可獲得與第一實施例之效果相同的效果。
在支撐柱51及53黏附至基板10或控制器晶片30上之後間隔物晶片50可黏附至支撐柱51及53上。替代地，在支撐柱51及53黏附至間隔物晶片50之後表面上之後間隔物晶片50可黏附至基板10及控制器晶片30連同支撐柱51及53上。 (第三實施例)
圖7係根據第三實施例繪示半導體裝置3之組態之實例的剖視圖。根據第三實施例之半導體裝置3包括彼此鄰近地置放於間隔物晶片50上之第一堆疊主體ST1及第二堆疊主體ST2。第一堆疊主體ST1包括堆疊於間隔物晶片50上之複數個記憶體晶片70。第二堆疊主體ST2包括鄰近於第一堆疊主體ST1堆疊於間隔物晶片50上之複數個記憶體晶片70。亦即，在第三實施例中記憶體晶片70像雙塔一樣堆疊。
在記憶體晶片70進一步經縮減之情況下，記憶體晶片70可堆疊為平行置放於間隔物晶片50上之複數個堆疊主體，如在第三實施例中。此組態可增大記憶體晶片70之儲存容量。
根據第三實施例之半導體裝置3之其他組態可與第一實施例之對應組態相同。因此，第三實施例可獲得與第一實施例之效果相同的效果。
另外，在第三實施例中，可提供支撐柱51及53同時第三實施例與第二實施例組合。藉由此組合，第三實施例可獲得與第二實施例之效果相同的效果。 (第四實施例)
圖8係根據第四實施例繪示半導體裝置4之組態之實例的剖視圖。在第四實施例中，替代在控制器晶片30之下複數個記憶體晶片70堆疊於間隔物晶片50之下。記憶體晶片70亦堆疊於間隔物晶片50上。
半導體裝置4包括第一堆疊主體ST11及第二堆疊主體ST12，其各自藉由堆疊複數個記憶體晶片70組態。第一堆疊主體ST11包括經堆疊以在實質上平行於基板10之安裝表面之方向D1上彼此移位的記憶體晶片70。第二堆疊主體ST12包括經堆疊以在與方向D1相反之方向D2上彼此移位的記憶體晶片70。間隔物晶片50及黏著劑材料40提供於第一堆疊主體ST11與第二堆疊主體ST12之間。亦即，第一堆疊主體ST11之記憶體晶片70經堆疊以在基板10與間隔物晶片50之間在方向D1上彼此移位。第二堆疊主體ST12之記憶體晶片70堆疊於間隔物晶片50上以在與第一堆疊主體ST11之記憶體晶片70移位之方向相反之方向D2上彼此移位。
替代在控制器晶片30之下記憶體晶片70提供於間隔物晶片50之下。在本實施例中，黏著劑材料40並未嵌入記憶體晶片70並且使得間隔物晶片50黏附至第一堆疊主體ST11。
此種在第一堆疊主體ST11與第二堆疊主體ST12之間提供間隔物晶片50有助於導線接合至位於第一堆疊主體ST11之最頂部層中之記憶體晶片70t。
舉例而言，在第二堆疊主體ST12直接地黏附於第一堆疊主體ST11之最頂部層中之記憶體晶片70t上的情況下，最頂部層中之記憶體晶片70t之接合墊74由第二堆疊主體ST12之最底部層中之記憶體晶片70b覆蓋。當記憶體晶片70b之厚度較小時，即使記憶體晶片70b在方向D1上自記憶體晶片70t移位，它亦難以將金屬導線75接合至在第一堆疊主體ST11之最頂部層中之記憶體晶片70t。
與其相比，在第一堆疊主體ST11與第二堆疊主體ST12之間提供間隔物晶片50在一定程度上彼此分離在第一堆疊主體ST11之最頂部層中之記憶體晶片70t與在第二堆疊主體ST12之最底部層中之記憶體晶片70b。因此，金屬導線75可容易地接合至在第一堆疊主體ST11之最頂部層中之記憶體晶片70t之接合墊74。
由於在第一堆疊主體ST11與第二堆疊主體ST12之間提供間隔物晶片50，間隔物晶片50亦充當用於第二堆疊主體ST12之支撐主體。因此，可穩定包括第一堆疊主體ST11及第二堆疊主體ST12之堆疊結構。
類似於在第一實施例中之情況，熱固性樹脂材料用於間隔物晶片50。此組態改良了間隔物晶片50與模製樹脂80之間的黏附性，並且抑止脫離發生於間隔物晶片50與模製樹脂80之間。 (第五實施例)
圖9係根據第五實施例繪示半導體裝置5之組態之實例的剖視圖。第五實施例不同於第四實施例之處在於緩衝材料95提供於第二堆疊主體ST12上。
緩衝材料95藉由插入於其間之黏著劑材料91黏附至在第二堆疊主體ST12之最頂部層中之記憶體晶片70上。緩衝材料95由類似於間隔物晶片50之熱固性樹脂材料組成。
在藉由模製樹脂80密封之後，藉由雷射或類似者在模製樹脂80之表面上執行印刷。此時，當第二堆疊主體ST12上之模製樹脂80之膜厚度較小時，第二堆疊主體ST12之記憶體晶片70可能被雷射損壞並且破裂。
與其相比，根據第五實施例，緩衝材料95提供於第二堆疊主體ST12上。因此，緩衝材料95可吸收雷射之衝擊並且保護堆疊主體ST12之記憶體晶片70。
第五實施例之其他組態可與第四實施例之對應組態相同。因此，第五實施例可獲得與第四實施例之效果相同的效果。 (第六實施例)
圖10係根據第六實施例繪示半導體裝置6之組態之實例的剖視圖。在第六實施例中，間隔物晶片50被劃分成兩部分，其分別在控制器晶片30之兩側上置放於基板10上方。因此，黏著劑材料40亦被劃分成兩部分，其分別置放於控制器晶片30之兩側上。亦即，當自基板10之安裝表面上方查看時，黏著劑材料40及間隔物晶片50提供於控制器晶片30之外部上之兩個基板區上。黏附材料40提供於間隔物晶片50與基板10之間，使得間隔物晶片50及基板10分別彼此黏附，並且支撐間隔物晶片50。雖然黏附材料40未提供於控制器晶片30上，但黏附材料40覆蓋金屬導線35之部分。
模製樹脂80填充於兩個間隔物晶片50與兩個黏附材料40之間的空間中。模製樹脂80覆蓋控制器晶片30。
記憶體晶片70提供於控制器晶片30上方以橋接於位於控制器晶片30之兩側上之間隔物晶片50之間。亦即，當自基板10之安裝表面上方查看時，記憶體晶片70與控制晶片30重疊。即使間隔物晶片50提供為兩個經劃分之部分，它們亦可支撐記憶體晶片70。
與在第一實施例中之熱固性樹脂相同的熱固性樹脂用於間隔物晶片50。因此，第六實施例可獲得與第一實施例之效果相同的效果。
雖然已描述了某些實施例，但此等實施例僅藉助於實例而呈現，且並不意圖限制本發明之範疇。實際上，本文中所描述之新穎方法及系統可以多種其他形式實施；此外，可作出呈本文中所描述之方法及系統之形式之各種省略、替代及改變而不脫離本發明之精神。所附申請專利範圍及其等效物意圖涵蓋將處於本發明之範疇及精神內的此類形式或修改。 相關申請案之交叉參考
本申請案依據並且主張2018年7月12日申請之第2018-132154號先前日本專利申請案的優先權，該專利申請案之全部內容以引入之方式併入本文中。
1‧‧‧半導體裝置 2‧‧‧半導體裝置 3‧‧‧半導體裝置 4‧‧‧半導體裝置 5‧‧‧半導體裝置 6‧‧‧半導體裝置 10‧‧‧基板 16‧‧‧絕緣層 17‧‧‧佈線層 20‧‧‧黏著劑材料 30‧‧‧控制器晶片 32‧‧‧接合墊 35‧‧‧金屬導線 40‧‧‧黏著劑材料 45‧‧‧樹脂材料 46‧‧‧縫隙 50‧‧‧間隔物晶片 51‧‧‧支撐柱 53‧‧‧支撐柱 60‧‧‧黏著劑材料 70‧‧‧記憶體晶片 70b‧‧‧記憶體晶片 70t‧‧‧記憶體晶片 74‧‧‧接合墊 75‧‧‧金屬導線 80‧‧‧模製樹脂 90‧‧‧金屬凸塊 91‧‧‧黏著劑材料 95‧‧‧緩衝材料 120‧‧‧切割帶 140‧‧‧推送部件 D1‧‧‧方向 D2‧‧‧方向 DB‧‧‧切割刀片 DL‧‧‧切割線 ST1‧‧‧第一堆疊主體 ST2‧‧‧第二堆疊主體 ST11‧‧‧第一堆疊主體 ST12‧‧‧第二堆疊主體
圖1係根據第一實施例繪示半導體裝置之組態之實例的剖視圖； 圖2係繪示控制器晶片、間隔物晶片及記憶體晶片之外部形狀之實例的平面視圖； 圖3A至圖3F係根據第一實施例繪示間隔物晶片之製造方法之實例的圖式； 圖4係繪示對應於樹脂材料之切割線之部分的剖視圖； 圖5係根據第二實施例繪示半導體裝置之組態之實例的剖視圖； 圖6係根據第二實施例繪示控制晶片、間隔物晶片及支撐柱之置放的平面視圖； 圖7係根據第三實施例繪示半導體裝置之組態之實例的剖視圖； 圖8係根據第四實施例繪示半導體裝置之組態之實例的剖視圖； 圖9係根據第五實施例繪示半導體裝置之組態之實例的剖視圖；以及 圖10係根據第六實施例繪示半導體裝置之組態之實例的剖視圖。
1‧‧‧半導體裝置
10‧‧‧基板
16‧‧‧絕緣層
17‧‧‧佈線層
20‧‧‧黏著劑材料
30‧‧‧控制器晶片
32‧‧‧接合墊
35‧‧‧金屬導線
40‧‧‧黏著劑材料
50‧‧‧間隔物晶片
60‧‧‧黏著劑材料
70‧‧‧記憶體晶片
74‧‧‧接合墊
75‧‧‧金屬導線
80‧‧‧模製樹脂
90‧‧‧金屬凸塊

Claims (16)

  1. 一種半導體裝置，其包含：一基板；一第一半導體晶片，其提供(provided)於該基板上方；一第二半導體晶片，其提供於該第一半導體晶片上方；一間隔物晶片(spacer chip)，其相對於與該基板之一安裝表面正交之一方向提供於該第一半導體晶片與該第二半導體晶片之間，該間隔物晶片由一第一樹脂材料製成；一第一黏著劑材料，其提供於該間隔物晶片與該基板或該第一半導體晶片之間；一第二黏著劑材料，其提供於該間隔物晶片與該第二半導體晶片之間；一第二樹脂材料，其覆蓋該第一半導體晶片及該第二半導體晶片以及該間隔物晶片；及複數個第一支撐柱，其等提供於該間隔物晶片與該基板之間，且由該第一樹脂材料製成。
  2. 如請求項1之半導體裝置，其中該第一樹脂材料係與該第二樹脂材料相同之一材料。
  3. 如請求項1之半導體裝置，其中當自該基板之該安裝表面上方查看時，該間隔物晶片之一外部邊緣與該第一半導體晶片之一外部邊緣相比位 於一外側上。
  4. 如請求項1之半導體裝置，其中複數個該第二半導體晶片堆疊於該間隔物晶片上方，且該第二黏著劑材料提供於該間隔物晶片與該第二半導體晶片之間並且提供於該等堆疊之第二半導體晶片之間。
  5. 如請求項1之半導體裝置，其中該第二半導體晶片係一記憶體晶片，並且該第一半導體晶片係經組態以控制該記憶體晶片之一控制器晶片。
  6. 如請求項1之半導體裝置，其中該基板係包括一第三樹脂材料及一導電材料之一堆疊基板，並且該第一樹脂材料係與該第三樹脂材料相同之一材料。
  7. 如請求項1之半導體裝置，其中該第一樹脂材料係具有一環氧樹脂作為一主要組分並且含有酚醛樹脂(phenol resin)及二氧化矽填充物(silica filler)之一熱固性樹脂(thermosetting resin)。
  8. 一種半導體裝置，其包含：一基板；一第一半導體晶片，其提供於該基板上方；一第二半導體晶片，其提供於該第一半導體晶片上方； 一間隔物晶片，其相對於與該基板之一安裝表面正交之一方向提供於該第一半導體晶片與該第二半導體晶片之間，該間隔物晶片由一第一樹脂材料製成；一第一黏著劑材料，其提供於該間隔物晶片與該基板或該第一半導體晶片之間；一第二黏著劑材料，其提供於該間隔物晶片與該第二半導體晶片之間；及一第二樹脂材料，其覆蓋該等第一及第二半導體晶片以及該間隔物晶片；其中該第一樹脂材料係具有一環氧樹脂作為一主要組分並且含有酚醛樹脂、丙烯酸類樹脂(acrylic resin)、二氧化矽填充物、氧化鈦填充物及一玻璃布(glass cloth)之一熱固性樹脂。
  9. 一種半導體裝置，其包含：一基板；一第一半導體晶片，其提供於該基板上方；一第二半導體晶片，其提供於該第一半導體晶片上方；一間隔物晶片，其相對於與該基板之一安裝表面正交之一方向提供於該第一半導體晶片與該第二半導體晶片之間，該間隔物晶片由一第一樹脂材料製成；一第一黏著劑材料，其提供於該間隔物晶片與該基板或該第一半導體晶片之間；一第二黏著劑材料，其提供於該間隔物晶片與該第二半導體晶片之 間；及一第二樹脂材料，其覆蓋該等第一及第二半導體晶片以及該間隔物晶片；其中該第一黏著劑材料係含有環氧樹脂、酚醛樹脂、丙烯酸類樹脂及二氧化矽填充物之一熱固性樹脂。
  10. 如請求項1、8或9之半導體裝置，其中形成有一第一堆疊主體及一第二堆疊主體，該第一堆疊主體包括堆疊於該間隔物晶片上方之複數個該第二半導體晶片之一第一部分，並且該第二堆疊主體包括在該間隔物晶片上方鄰近於該第一堆疊主體而堆疊之該複數個第二半導體晶片之一第二部分。
  11. 一種半導體裝置，其包含：一基板；一第一半導體晶片，其提供於該基板上方；一第二半導體晶片，其提供於該第一半導體晶片上方；一間隔物晶片，其相對於與該基板之一安裝表面(mount surface)正交之一方向而提供於該第一半導體晶片與該第二半導體晶片之間，該間隔物晶片由一第一樹脂材料製成；一第一黏著劑材料，其提供於該間隔物晶片與該基板或該第一半導體晶片之間；一第二黏著劑材料，其提供於該間隔物晶片與該第二半導體晶片之 間；一第二樹脂材料，其覆蓋該第一半導體晶片及該第二半導體晶片以及該間隔物晶片；複數個第一支撐柱，其提供於該間隔物晶片與該基板之間，並且由該第一樹脂材料製成；一第二支撐柱，其提供於該間隔物晶片與該第一半導體晶片之間，並且由該第一樹脂材料製成。
  12. 如請求項11之半導體裝置，其中該第一樹脂材料係與該第二樹脂材料相同之一材料。
  13. 如請求項11之半導體裝置，其中該第二支撐柱及該第二樹脂材料係形成於該第一黏著劑材料與該第一半導體晶片之間。
  14. 如請求項11之半導體裝置，其中當自該基板之該安裝表面上方查看時，該間隔物晶片之一外部邊緣(outer edge)係：與該第一半導體晶片之一外部邊緣相比，位於外側(outer side)。
  15. 如請求項11之半導體裝置，其中複數個該第二半導體晶片堆疊於該間隔物晶片上方，且該第二黏著劑材料係提供於該間隔物晶片與該第二半導體晶片之間並且提供於該等堆疊之第二半導體晶片之間。
  16. 如請求項11之半導體裝置，其中該第二半導體晶片係一記憶體晶片，且該第一半導體晶片係組態為控制該記憶體晶片之一控制器晶片。
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