CN110718544B - 半导体装置 - Google Patents

半导体装置 Download PDF

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Publication number
CN110718544B
CN110718544B CN201910147699.7A CN201910147699A CN110718544B CN 110718544 B CN110718544 B CN 110718544B CN 201910147699 A CN201910147699 A CN 201910147699A CN 110718544 B CN110718544 B CN 110718544B
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chip
spacer
substrate
semiconductor
resin
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CN110718544A (zh
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内田祐树
渡部武志
早川健
天野彩那
菅生悠树
池部礼淑
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Kioxia Corp
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Kioxia Corp
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Abstract

根据实施例的半导体装置包括衬底和提供在所述衬底上方的第一半导体芯片。第二半导体芯片提供在所述第一半导体芯片上方。相对于与所述衬底的安装表面正交的方向，间隔物芯片提供在所述第一半导体芯片与所述第二半导体芯片之间，所述间隔物芯片由第一树脂材料制成。第一粘合剂材料提供在所述间隔物芯片与所述衬底或所述第一半导体芯片之间。第二粘合剂材料提供在所述间隔物芯片与所述第二半导体芯片之间。第二树脂材料覆盖所述第一和第二半导体芯片以及所述间隔物芯片。

Description

半导体装置
相关申请的交叉参考
本申请依据并且主张2018年7月12日递交的第2018-132154号先前日本专利申请的优先权，所述专利申请的全部内容以引入的方式并入本文中。
技术领域
本发明的实施例涉及半导体装置。
背景技术
在例如NAND快闪存储器的半导体装置的一些封装中，例如存储器芯片和控制器芯片的多个半导体芯片通过使用FOD(装置上膜(Film On Device))技术堆叠。在FOD技术中，间隔物芯片有时用于使得下部层半导体芯片(下部层芯片)能够嵌入在粘合剂膜中，即使上部层芯片是经缩减的也是如此。
然而，由与半导体衬底的材料相同的材料制成且不具有图案的镜像芯片被用作间隔物芯片并且其表面处于镜像状态。相应地，间隔物芯片对密封半导体芯片的模制树脂的粘合力较低并且在热和潮湿的环境中存在脱离发生在间隔物芯片与模制树脂之间的界面处的风险。此趋势降低了半导体装置的可靠性。
另外，可以想象的是间隔物芯片涂覆有聚酰亚胺以增强对模制树脂的粘合力。然而，聚酰亚胺的使用增加了制造成本。
发明内容
根据实施例的半导体装置包括衬底和位于衬底上方的第一半导体芯片。第二半导体芯片位于第一半导体芯片上方。相对于与衬底的安装表面正交的方向，间隔物芯片位于第一半导体芯片与第二半导体芯片之间，间隔物芯片由第一树脂材料制成。第一粘合剂材料位于间隔物芯片与衬底或第一半导体芯片之间。第二粘合剂材料位于间隔物芯片与第二半导体芯片之间。第二树脂材料覆盖第一和第二半导体芯片以及间隔物芯片。
根据本发明，可以改进半导体装置的可靠性。
附图说明
图1是根据第一实施例说明半导体装置的配置的实例的剖视图；
图2是说明控制器芯片、间隔物芯片和存储器芯片的外部形状的实例的平面视图；
图3A到3F是根据第一实施例说明间隔物芯片的制造方法的实例的图式；
图4是说明对应于树脂材料的切割线的部分的剖视图；
图5是根据第二实施例说明半导体装置的配置的实例的剖视图；
图6是根据第二实施例说明控制芯片、间隔物芯片和支撑柱的放置的平面视图；
图7是根据第三实施例说明半导体装置的配置的实例的剖视图；
图8是根据第四实施例说明半导体装置的配置的实例的剖视图；
图9是根据第五实施例说明半导体装置的配置的实例的剖视图；以及
图10是根据第六实施例说明半导体装置的配置的实例的剖视图。
具体实施方式
现在将参考附图来解释实施例。本发明不限于实施例。在实施例中，术语“上部方向”或“下部方向”偶尔不同于基于重力加速度方向的上部方向或下部方向。在本说明书和图式中，与在前述图式中描述的元件相同的元件通过相同的参考标号表示并且视需要省略其详细解释。
(第一实施例)
图1是根据第一实施例说明半导体装置1的配置的实例的剖视图。根据本实施例的半导体装置1是表面安装半导体封装，并且可以是例如，BGA(球状栅格阵列(Ball GridArray)封装)、MAP(模制阵列封装(Mold Array Package))或LGA(平台栅格阵列(Land GridArray)封装)。半导体装置1也可以是半导体存储器装置，例如，NAND快闪存储器。半导体装置1包含衬底10、粘合剂材料20、控制器芯片30、粘合剂材料40、间隔物芯片50、粘合剂材料60、存储器芯片70、模制树脂80和金属凸块90。
举例来说，衬底10是多层布线衬底，其包含堆叠以集成在一起的单个或多个绝缘层(第三树脂材料)16以及单个或多个布线层17。例如玻璃环氧树脂或玻璃BT树脂(双马来酰亚胺-三嗪树脂)的树脂材料被用作绝缘层16。布线层17提供在衬底10中或在衬底10的前表面和后表面上且电连接到接合垫(未图示)。例如铜的低电阻导电材料被用作布线层17。衬底10的平面形状不受特定限制并且可以是基本上矩形或基本上正方形的。
阻焊剂掩膜(未图示)提供在衬底10的后表面上。阻焊剂掩膜并不提供在金属凸块90形成在其中的区上，并且金属凸块90电连接到从阻焊剂掩膜中暴露的布线层17。此配置使得金属凸块90能够充当外部连接端子并且连接到其它半导体装置。举例来说，例如焊料的导电材料被用作金属凸块90。
作为第一半导体芯片的控制器芯片30通过粘合剂材料(DAF(裸片附接膜(DieAttachment Film)))20卡住且固定到衬底10的前表面上。控制器芯片30是控制存储器芯片70的半导体芯片并且构成控制电路的半导体元件(例如，晶体管)提供在控制器芯片30的前表面上。控制器芯片30具有连接到内部控制电路的接合垫32并且通过金属导线35电连接到衬底10的接合垫(未图示)。控制器芯片30选择对其执行写入或读取数据的存储器芯片70，或执行将数据写入到所选择的存储器芯片70中或从所选择的存储器芯片70中读取数据。多个控制器芯片30可以放置在衬底10上。
粘合剂材料20提供在衬底10与控制器芯片30之间并且使得控制器芯片30粘附到衬底10。举例来说，由热固性树脂制成的粘合剂膜(DAF)被用作粘合剂材料20。
间隔物芯片50提供在粘合剂材料40上并且布置在衬底10和控制器芯片30上方，其方式为使得通过粘合剂材料40防止接触衬底10和控制器芯片30。提供电气连接到控制器芯片30或存储器芯片70的任何内部布线并不提供在间隔物芯片50中。热固性树脂材料(第一树脂材料)被用作间隔物芯片50。当在加热和回焊之后经冷却和固化时，热固性树脂具有稳定的尺寸和形状。相应地，通过热固性树脂作为间隔物芯片50的使用，间隔物芯片50在被加热时变得易于处理并且在被冷却时可以稳定地支撑存储器芯片70。
在本实施例中，间隔物芯片50的树脂材料(第一树脂材料)是与作为第二树脂材料的模制树脂80相同的材料。因为间隔物芯片50由与模制树脂80相同的材料制成，所以增强了间隔物芯片50与模制树脂80之间的粘附性并且可以抑制在间隔物芯片50与模制树脂80之间发生脱离。举例来说，间隔物芯片50的树脂材料是环氧树脂组合物，所述环氧树脂组合物具有环氧树脂作为主要组分并且含有酚醛树脂和二氧化硅填充物。
作为第一粘合剂材料的粘合剂材料40提供在控制器芯片30与间隔物芯片50之间且在衬底10与间隔物芯片50之间，并且使得间隔物芯片50卡住且固定到衬底10和控制器芯片30上。粘合剂材料40还覆盖控制器芯片30、金属导线35及类似者以保护这些部件。举例来说，由热固性树脂制成的粘合剂膜(DAF)被用作粘合剂材料40。举例来说，环氧树脂、酚醛树脂、丙烯酸类树脂和二氧化硅填充物的组合物被用作粘合剂材料40。粘合剂材料40的厚度是从5微米到150微米的值。粘合剂材料40是在与间隔物芯片50相比较低的温度下熔化的材料。因此，粘合剂材料40可以经回焊以通过粘合剂材料40嵌入控制器芯片30、金属导线35及类似者而不熔化间隔物芯片50。
作为第二粘合剂材料的粘合剂材料60提供在间隔物芯片50与存储器芯片70之间并且使得存储器芯片70粘附到间隔物芯片50。举例来说，由热固性树脂制成的粘合剂膜(DAF)被用作粘合剂材料60。
作为第二半导体芯片的存储器芯片70提供在粘合剂材料60上并且通过粘合剂材料60固定到间隔物芯片50上。举例来说，存储器芯片70是各自具有NAND快闪存储器的半导体芯片，并且二维或三维存储器单元阵列提供在半导体衬底的前表面上。存储器芯片70具有连接到内部电路的接合垫74，并且接合垫74通过金属导线75电连接到衬底10的接合垫(未图示)。通过此配置，存储器芯片70经由金属导线75和35以及衬底10的内部布线电连接到控制器芯片30，并且可以在控制器芯片30的控制下操作。虽然未图示，但是金属导线75可以将下部层存储器芯片70以及最顶部层存储器芯片70连接到衬底10。替代地，下部层存储器芯片70可以经由通孔电连接到彼此。在此情况下，无需通过金属导线75执行下部层存储器芯片70的导线接合。
在本实施例中，存储器芯片70堆叠在间隔物芯片50上。在此情况下，存储器芯片70中的每一个通过粘合剂材料60卡住到间隔物芯片50或位于存储器芯片70的正下方的存储器芯片70。
模制树脂80提供在衬底10上并且覆盖控制器芯片30、间隔物芯片50、存储器芯片70以及金属导线35和75。模制树脂80保护控制器芯片30、间隔物芯片50、存储器芯片70以及金属导线35和75免受半导体装置1的外部的影响。
图2是说明控制器芯片30、间隔物芯片50和存储器芯片70的外部形状的实例的平面视图。如图2中所说明，当从衬底10的安装表面上方查看时，间隔物芯片50的外部边缘与控制器芯片30和存储器芯片70的外部边缘相比位于外侧上。也就是说，相对于与衬底10的安装表面正交的方向，间隔物芯片50提供在控制器芯片30与存储器芯片70之间，并且在衬底10的安装区域中大于控制器芯片30和存储器芯片70。间隔物芯片50的外部形状可以基本上类似于控制器芯片30或存储器芯片70的外部形状。
当存储器芯片70具有等同于间隔物芯片50的大小时，它足以在存储器芯片70的后表面与控制器芯片30或衬底10之间提供粘合剂材料40并且通过粘合剂材料40嵌入控制器芯片30和金属导线35而不提供间隔物芯片50。然而，如果由于存储器芯片70的缩减存储器芯片70的大小变得接近控制器芯片30的大小，那么卡住到存储器芯片70的后表面上的粘合剂材料40的大小也减小。因此，控制器芯片30和金属导线35无法充分地由粘合剂材料40覆盖。
与其相比，根据本实施例的间隔物芯片50的大小大于控制器芯片30和存储器芯片70的大小，并且间隔物芯片50的外部边缘与控制器芯片30和存储器芯片70的外部边缘相比位于外侧上。相应地，可以维持卡住到间隔物芯片50上的粘合剂材料(DAF)40的大小以通过粘合剂材料40充分地覆盖控制器芯片30和金属导线35的整个部分。
如果构成控制器芯片30或存储器芯片70的镜样半导体衬底(例如，硅衬底)被用作间隔物芯片，那么间隔物芯片在对模制树脂80的粘附性上是相对低的并且轻易地从模制树脂80脱离。
与其相比，间隔物芯片50由与模制树脂80相同的树脂材料制成。因此，间隔物芯片50与模制树脂80之间的粘附性是相对高的并且不大可能发生脱离。因此，可以增强半导体装置1的可靠性。
根据本实施例不必将例如聚酰亚胺的昂贵的大分子有机材料施加到间隔物芯片50上。因此，根据本实施例，可以抑制制造成本的增加。
接下来解释根据本实施例的间隔物芯片50的制造方法。
图3A到3F是说明根据第一实施例的间隔物芯片的制造方法的实例的图式。
首先，如图3A中所说明，形成具有任何厚度的柱状树脂材料45。树脂材料45可以使用模具或类似者模制，或者可以通过施加到例如半导体晶片的圆形部件上形成。树脂材料45的直径优选地具有等同于半导体晶片的大小的大小。此配置使得树脂材料45能够通过与用于半导体晶片的切割过程相同的过程来单体化。优选的是树脂材料45是与模制树脂80相同的热固性树脂。相应地，树脂材料45可以经加热以在用于树脂材料45的模制过程中模制。
接下来，使用抛光装置抛光图3A中说明的柱状树脂材料45以使得树脂材料45具有如图3B中所说明的所期望的厚度。
随后，粘合剂材料(DAF)40被施加到树脂材料45的后表面，如图3C中所说明。
接下来，切割带(未在图3D中说明)被施加到粘合剂材料40并且通过切割刀片DB将树脂材料45切成间隔物芯片50的大小，如图3D中所说明。此时，切割刀片DB足以在厚度的中间切树脂材料45和粘合剂材料40。
随后，切割带120通过推送部件140从下方向上推送以延展(扩展)切割带120，如图3E中所说明。相应地，树脂材料45连同切割带120被向外拉伸。此时，树脂材料45和粘合剂材料40沿切割线断裂以单体化成多个间隔物芯片50。
树脂材料45和粘合剂材料40可以通过任何切割方法单体化，例如，刀片切割方法、扩展方法、激光切割方法，或锯切方法。
随后，如图3F中所说明的间隔物芯片50通过裸片接合装置(未图示)拾起并且安装在衬底10上，所述衬底具有安装在其上的控制器芯片30。在此情况下，间隔物芯片50放置在控制器芯片30和金属导线35连同粘合剂材料40(未在图3F中图示)上并且被加热和加压。此时，间隔物芯片50在间隔物芯片50并不回焊且粘合剂材料40回焊的温度下加热。相应地，粘合剂材料40回焊以嵌入控制器芯片30和金属导线35并且卡住到衬底10，如图1中所说明。
之后，各自具有粘合剂材料60的存储器芯片70堆叠在间隔物芯片50上，并且存储器芯片70和衬底10与金属导线75接合。另外，控制器芯片30、间隔物芯片50、存储器芯片70、金属导线75及类似者通过模制树脂80密封并且金属凸块90形成在衬底10的后侧上。图1中所说明的封装结构是以此方式获得的。
通过这种方式，根据本实施例的间隔物芯片50可以通过与用于半导体晶片的切割过程相同的过程形成。
此外，间隔物芯片50由与模制树脂80相同的树脂材料形成。因此，间隔物芯片50与模制树脂80之间的粘附性是相对高的并且不大可能发生脱离。
因为间隔物芯片50由树脂材料形成，所以不需要施加例如聚酰亚胺的任何昂贵大分子有机材料。相应地，可以抑制制造成本的增加。
(第一修改)
当形成在图3A中说明的树脂材料45时在树脂材料45形成为具有在图3B中说明的抛光之后的厚度的情况中，可以省略在图3A中说明的用于树脂材料45的形成过程。在此情况下，树脂材料45足以通过将树脂材料施加到作为半导体晶片的圆形部件上形成。替代地，根据第一修改的树脂材料45可以使用模具或类似者模制，类似于在图3A中说明的树脂材料45。
之后，执行参考图3C到3E解释的过程，由此形成在图3F中说明的间隔物芯片50。并且通过这种方式，可以形成与在第一实施例中的间隔物芯片相同的间隔物芯片50。
(第二修改)
当形成树脂材料45时树脂材料45也可以直接地形成在粘合剂材料40上。举例来说，施加树脂材料45以具有在薄片状粘合剂材料40上的所期望的厚度。接下来，粘合剂材料40和树脂材料45经切割以具有等同于半导体晶片的大小的大小。包含图3C中说明的粘合剂材料40和树脂材料45的堆叠主体以此方式形成。
之后，执行参考图3D和3E解释的过程，由此形成在图3F中说明的间隔物芯片50。并且通过这种方式，可以形成与在第一实施例中的间隔物芯片相同的间隔物芯片50。
(第三修改)
在第一实施例中，在粘合剂材料40卡住到如图3C中所说明的树脂材料45之后，执行如图3D和3E中所说明的切割和扩展。
与其相比，在第三修改中，缝隙46提前提供在树脂材料45的切割线DL上，如图4中所说明。图4是说明对应于树脂材料45的切割线DC的部分的剖视图。缝隙46形成为达到树脂材料45的厚度的中间位置。粘合剂材料40卡住到具有缝隙46的树脂材料45的后表面。切割带进一步卡住到树脂材料45和粘合剂材料40，并且树脂材料45和粘合剂材料40在切割带上扩展。相应地，树脂材料45和粘合剂材料40沿缝隙46断裂以单体化成间隔物芯片50。缝隙46可以在与树脂材料45通过模具模制的相同时间提供。此过程使得树脂材料45能够通过扩展方法单体化，而无需通过切割刀片切割树脂材料45。并且在第三修改中，可以形成与在第一实施例中的间隔物芯片相同的间隔物芯片50。
(第四修改)
在第一实施例中，间隔物芯片50的树脂材料(第一树脂材料)是与模制树脂80相同的树脂材料。)然而，间隔物芯片50可以是类似于模制树脂80的树脂材料或与衬底10的绝缘层16相同或类似的树脂材料。举例来说，间隔物芯片50的树脂材料可以是具有环氧树脂作为主要组分并且含有酚醛树脂、丙烯酸类树脂、二氧化硅填充物、三氧化钛填充物和玻璃布的材料。举例来说，当玻璃布包含在环氧树脂材料中时，间隔物芯片50的树脂材料变为玻璃环氧树脂。通过这种方式，即使间隔物芯片50是类似于模制树脂80的树脂材料或与半导体10的绝缘层16相同或类似的树脂材料，间隔物芯片50到模制树脂80的粘附性也得到改进并且半导体装置的可靠性也可以增强。当间隔物芯片50是玻璃环氧树脂衬底时，铜箔或阻焊剂掩膜可以提供在玻璃环氧树脂衬底的前表面和/或后表面上。半导体装置的标识标记可以通过在玻璃环氧树脂衬底的前表面和/或后表面上蚀刻呈现(压印)。
此外，举例来说，在固化之后间隔物芯片50可具有从10GPa到50GPa的弹性模数、从3ppm/℃到20ppm/℃的热膨胀系数、从80℃到320℃的玻璃转化温度，以及从5微米到300微米的厚度。具有这些特性的间隔物芯片50具有此类程度的硬度使得它可以在单体化之后被拾起并且通过裸片接合放置在衬底10上，并且可以充当用于存储器芯片70的支撑主体。
(第二实施例)
图5是根据第二实施例说明半导体装置2的配置的实例的剖视图。半导体装置2进一步包含支撑柱51和53。作为第一支撑柱的支撑柱51提供在间隔物芯片50与衬底10之间。支撑柱51充当支撑间隔物芯片50以防止间隔物芯片50的端部朝向衬底10下降的支撑柱。作为第二支撑柱的支撑柱53提供在间隔物芯片50与控制器芯片30之间。支撑柱53充当支撑间隔物芯片50以防止间隔物芯片50的中心部分朝向衬底10下降的支撑柱。支撑柱51和53由与间隔物芯片50的树脂材料相同的树脂材料(第一树脂材料)制成。相应地，改进支撑柱51和53与模制树脂80之间的粘附性并且可以抑制支撑柱51和53与模制树脂80之间的脱离。
在第二实施例中，提供粘合剂材料40以使得间隔物芯片50粘附到支撑柱51和53，且并不覆盖控制器芯片30和金属导线35。也就是说，支撑柱53和模制树脂80形成在粘合剂材料40与控制器芯片30之间，并且控制器芯片30和金属导线35由模制树脂80覆盖。
图6是根据第二实施例说明控制芯片30、间隔物芯片50以及支撑柱51和53的放置的平面视图。当从衬底10的安装表面上方查看时，支撑柱51具有延长的形状以沿间隔物芯片50的两个相对侧延伸。支撑柱51放置在控制器芯片30的外部上。当从衬底10的安装表面上方查看时，支撑柱53具有延长的形状以沿控制器芯片30的两个相对侧延伸。支撑柱53放置在控制器芯片30的内部上。
模制树脂80从并不提供支撑柱51和53的间隔物芯片50的侧面穿透并且密封间隔物芯片50和衬底10或控制器芯片30之间的空间。支撑柱51和53基本上平行于彼此延伸。相应地，支撑柱51和53极少干扰模制树脂80的流动，并且模制树脂80被轻易地倒入在间隔物芯片50之下的空间中。
根据第二实施例的半导体装置2的其它配置可以与第一实施例的对应的配置相同。因此，第二实施例可以获得与第一实施例的效果相同的效果。
在支撑柱51和53卡住到衬底10或控制器芯片30上之后间隔物芯片50可以卡住到支撑柱51和53上。替代地，在支撑柱51和53卡住到间隔物芯片50的后表面上之后间隔物芯片50可以卡住到衬底10和控制器芯片30连同支撑柱51和53上。
(第三实施例)
图7是根据第三实施例说明半导体装置3的配置的实例的剖视图。根据第三实施例的半导体装置3包含邻近于彼此放置在间隔物芯片50上的第一堆叠主体ST1和第二堆叠主体ST2。第一堆叠主体ST1包含堆叠在间隔物芯片50上的多个存储器芯片70。第二堆叠主体ST2包含邻近于第一堆叠主体ST1堆叠在间隔物芯片50上的多个存储器芯片70。也就是说，在第三实施例中存储器芯片70像双塔一样堆叠。
在存储器芯片70进一步经缩减的情况中，存储器芯片70可以堆叠为平行放置在间隔物芯片50上的多个堆叠主体，如在第三实施例中。此配置可以增大存储器芯片70的存储容量。
根据第三实施例的半导体装置3的其它配置可以与第一实施例的对应的配置相同。因此，第三实施例可以获得与第一实施例的效果相同的效果。
另外，在第三实施例中，可以提供支撑柱51和53同时第三实施例与第二实施例组合。通过此组合，第三实施例可以获得与第二实施例的效果相同的效果。
(第四实施例)
图8是根据第四实施例说明半导体装置4的配置的实例的剖视图。在第四实施例中，替代于在控制器芯片30之下多个存储器芯片70堆叠在间隔物芯片50之下。存储器芯片70也堆叠在间隔物芯片50上。
半导体装置4包含第一堆叠主体ST11和第二堆叠主体ST12，其各自通过堆叠多个存储器芯片70配置。第一堆叠主体ST11包含经堆叠以在基本上平行于衬底10的安装表面的方向D1上彼此移位的存储器芯片70。第二堆叠主体ST12包含经堆叠以在与方向D1相反的方向D2上彼此移位的存储器芯片70。间隔物芯片50和粘合剂材料40提供在第一堆叠主体ST11与第二堆叠主体ST12之间。也就是说，第一堆叠主体ST11的存储器芯片70经堆叠以在衬底10与间隔物芯片50之间在方向D1上彼此移位。第二堆叠主体ST12的存储器芯片70堆叠在间隔物芯片50上以在与第一堆叠主体ST11的存储器芯片70移位的方向相反的方向D2上彼此移位。
替代于在控制器芯片30之下存储器芯片70提供在间隔物芯片50之下。在本实施例中，粘合剂材料40并未嵌入存储器芯片70并且使得间隔物芯片50粘附到第一堆叠主体ST11。
这种在第一堆叠主体ST11与第二堆叠主体ST12之间提供间隔物芯片50有助于导线接合到位于第一堆叠主体ST11的最顶部层中的存储器芯片70t。
举例来说，在第二堆叠主体ST12直接地卡住在第一堆叠主体ST11的最顶部层中的存储器芯片70t上的情况中，最顶部层中的存储器芯片70t的接合垫74由第二堆叠主体ST12的最底部层中的存储器芯片70b覆盖。当存储器芯片70b的厚度较小时，即使存储器芯片70b在方向D1上从存储器芯片70t移位，它也难以将金属导线75接合到在第一堆叠主体ST11的最顶部层中的存储器芯片70t。
与其相比，在第一堆叠主体ST11与第二堆叠主体ST12之间提供间隔物芯片50在一定程度上彼此分离在第一堆叠主体ST11的最顶部层中的存储器芯片70t与在第二堆叠主体ST12的最底部层中的存储器芯片70b。相应地，金属导线75可以容易地接合到在第一堆叠主体ST11的最顶部层中的存储器芯片70t的接合垫74。
由于在第一堆叠主体ST11与第二堆叠主体ST12之间提供间隔物芯片50，间隔物芯片50还充当用于第二堆叠主体ST12的支撑主体。相应地，可以稳定包含第一堆叠主体ST11和第二堆叠主体ST12的堆叠结构。
类似于在第一实施例中的情况，热固性树脂材料用于间隔物芯片50。此配置改进了间隔物芯片50与模制树脂80之间的粘附性，并且抑止脱离发生在间隔物芯片50与模制树脂80之间。
(第五实施例)
图9是根据第五实施例说明半导体装置5的配置的实例的剖视图。第五实施例不同于第四实施例之处在于缓冲材料95提供在第二堆叠主体ST12上。
缓冲材料95通过插入在其间的粘合剂材料91卡住到在第二堆叠主体ST12的最顶部层中的存储器芯片70上。缓冲材料95由类似于间隔物芯片50的热固性树脂材料组成。
在通过模制树脂80密封之后，通过激光或类似者在模制树脂80的表面上执行打印。此时，当第二堆叠主体ST12上的模制树脂80的膜厚度较小时，第二堆叠主体ST12的存储器芯片70可能被激光损坏并且破裂。
与其相比，根据第五实施例，缓冲材料95提供在第二堆叠主体ST12上。因此，缓冲材料95可以吸收激光的冲击并且保护堆叠主体ST12的存储器芯片70。
第五实施例的其它配置可以与第四实施例的对应的配置相同。因此，第五实施例可以获得与第四实施例的效果相同的效果。
(第六实施例)
图10是根据第六实施例说明半导体装置6的配置的实例的剖视图。在第六实施例中，间隔物芯片50被划分成两部分，其分别在控制器芯片30的两侧上放置在衬底10上方。相应地，粘合剂材料40也被划分成两部分，其分别放置在控制器芯片30的两侧上。也就是说，当从衬底10的安装表面上方查看时，粘合剂材料40和间隔物芯片50提供在控制器芯片30的外部上的两个衬底区上。粘附材料40提供在间隔物芯片50与衬底10之间，使得间隔物芯片50和衬底10分别粘附到彼此，并且支撑间隔物芯片50。虽然粘附材料40未提供在控制器芯片30上，但是粘附材料40覆盖金属导线35的部分。
模制树脂80填充在两个间隔物芯片50与两个粘附材料40之间的空间中。模制树脂80覆盖控制器芯片30。
存储器芯片70提供在控制器芯片30上方以桥接在位于控制器芯片30的两侧上的间隔物芯片50之间。也就是说，当从衬底10的安装表面上方查看时，存储器芯片70与控制芯片30重叠。即使间隔物芯片50提供为两个经划分的部分，它们也可以支撑存储器芯片70。
与在第一实施例中的热固性树脂相同的热固性树脂用于间隔物芯片50。因此，第六实施例可以获得与第一实施例的效果相同的效果。
虽然已描述某些实施例，但是这些实施例仅借助于实例而呈现，且并不意图限制本发明的范围。实际上，本文中所描述的新颖方法和系统可以多种其它形式实施；此外，可作出呈本文中所描述的方法和系统的形式的各种省略、替代和改变而不脱离本发明的精神。所附权利要求书及其等效物意图涵盖将处于本发明的范围及精神内的此类形式或修改。

Claims (13)

1.一种半导体装置，其包括：
衬底；
第一半导体芯片，其提供在所述衬底上方；
第二半导体芯片，其提供在所述第一半导体芯片上方；
间隔物芯片，其相对于与所述衬底的安装表面正交的方向，提供在所述第一半导体芯片与所述第二半导体芯片与之间，所述间隔物芯片由第一树脂材料制成；
第一粘合剂材料，其提供在所述间隔物芯片与所述衬底或所述第一半导体芯片之间；
第二粘合剂材料，其提供在所述间隔物芯片与所述第二半导体芯片之间；以及
第二树脂材料，其覆盖所述第一和第二半导体芯片以及所述间隔物芯片；
其中
多个所述第二半导体芯片堆叠在所述间隔物芯片上方，
形成有第一堆叠主体以及第二堆叠主体，
所述第一堆叠主体包含堆叠在所述间隔物芯片上方的所述多个第二半导体芯片的第一部分，并且
所述第二堆叠主体包含在所述间隔物芯片上方邻近于所述第一堆叠主体堆叠的所述多个第二半导体芯片的第二部分。
2.根据权利要求1所述的半导体装置，其中所述第一树脂材料是与所述第二树脂材料相同的材料。
3.根据权利要求1所述的半导体装置，其进一步包括提供在所述间隔物芯片与所述衬底之间并且由所述第一树脂材料制成的多个第一支撑柱。
4.根据权利要求3所述的半导体装置，其进一步包括提供在所述间隔物芯片与所述第一半导体芯片之间并且由所述第一树脂材料制成的第二支撑柱。
5.根据权利要求4所述的半导体装置，其中所述第二支撑柱和所述第二树脂材料形成在所述第一粘合剂材料与所述第一半导体芯片之间。
6.根据权利要求1所述的半导体装置，其中当从所述衬底的所述安装表面上方查看时所述间隔物芯片的外部边缘与所述第一半导体芯片的外部边缘相比位于外侧上。
7.根据权利要求1所述的半导体装置，其中
所述第二半导体芯片是存储器芯片，并且
所述第一半导体芯片是经配置以控制所述存储器芯片的控制器芯片。
8.根据权利要求1所述的半导体装置，其中
所述衬底是包含第三树脂材料和导电材料的堆叠衬底，并且
所述第一树脂材料是与所述第三树脂材料相同的材料。
9.根据权利要求1所述的半导体装置，其中所述第一树脂材料是具有环氧树脂作为主要组分并且含有酚醛树脂和二氧化硅填充物的热固性树脂。
10.根据权利要求1所述的半导体装置，其中所述第一树脂材料是具有环氧树脂作为主要组分并且含有酚醛树脂、丙烯酸类树脂、二氧化硅填充物、三氧化钛填充物和玻璃布的热固性树脂。
11.根据权利要求1所述的半导体装置，其中所述第一粘合剂材料是含有环氧树脂、酚醛树脂、丙烯酸类树脂和二氧化硅填充物的热固性树脂。
12.一种半导体装置，其包括：
衬底；
第一半导体芯片，其提供在所述衬底上方；
多个间隔物芯片，其当从所述衬底的安装表面上方查看时分别提供在所述第一半导体芯片的外部上的多个衬底区的上方并且由第一树脂材料制成；
第二粘合剂材料，其提供在所述间隔物芯片上；
第二半导体芯片，其提供在所述第二粘合剂材料上并且当从所述衬底的所述安装表面上方查看时与所述第一半导体芯片重叠；
第二树脂材料，其覆盖所述第一和第二半导体芯片以及所述间隔物芯片；以及
多个第一支撑柱，设置在所述多个间隔物芯片与所述衬底之间，且由所述第一树脂材料制成。
13.根据权利要求12所述的半导体装置，其中所述第一树脂材料是与所述第二树脂材料相同的材料。
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