TWI755542B - 靜電吸盤 - Google Patents

靜電吸盤 Download PDF

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TWI755542B
TWI755542B TW107119105A TW107119105A TWI755542B TW I755542 B TWI755542 B TW I755542B TW 107119105 A TW107119105 A TW 107119105A TW 107119105 A TW107119105 A TW 107119105A TW I755542 B TWI755542 B TW I755542B
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holding surface
tape
wafer
electrostatic chuck
holding
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千東謙太
飯田英一
山田智広
西田吉輝
高橋宏行
藤谷涼子
横尾晋
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日商迪思科股份有限公司
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Abstract

本發明的課題是在於抑制氣泡產生於膠帶與保持面之間，防止膠帶燒傷。 　　其解決手段為： 　　以保持面(41)來保持在下面貼附有膠帶(T)的晶圓(W)之靜電吸盤(4)包含： 　　複數的細孔(40)，其係被形成於保持面，連通至吸引源(43)； 　　凹凸(D)，其係被形成於保持面上，被連接至複數的細孔；及 　　電極(44)，其係被配設於內部。 　　使細孔連通至吸引源，吸引保持晶圓時，凹凸成為保持面上的吸引路。

Description

靜電吸盤
本發明是有關靜電吸盤。
在研削裝置之研削後的晶圓的被研削面殘存研削痕，此研削痕會形成使晶圓的抗折強度降低的原因。因此，提案藉由電漿蝕刻來從晶圓的被研削面除去研削痕的裝置(例如參照專利文獻1)。電漿蝕刻裝置是經由開閉門來從外部將晶圓搬入至腔室(減壓室)內，在將腔室內減壓的狀態下供給蝕刻氣體。然後，使令電漿化的蝕刻氣體反應於晶圓，從被研削面除去研削痕，而抑制起因於研削完了的晶圓的研削痕之抗折強度的降低。
在如此的電漿蝕刻裝置中，為了使腔室內形成真空狀態，在保持晶圓的吸盤平台，不是真空吸附式的吸盤平台，而使採用靜電吸附式的吸盤平台，所謂的靜電吸盤。 [先前技術文獻] [專利文獻]
[專利文獻1] 日本特開2016-143785號公報
並且，在晶圓的下面貼附有膠帶作為保護構件，晶圓是隔著該膠帶來載置於靜電吸盤的上面。此情況，有氣泡(間隙)被形成於膠帶與靜電吸盤之間的情形。在靜電吸盤中，為了除掉蝕刻氣體與晶圓反應後的反應熱，而於內部形成使冷卻水流通的冷卻水路。若在形成有該氣泡的狀態下實施電漿蝕刻，則會因氣泡而靜電吸盤的上面與膠帶未接觸，膠帶未被冷卻下暴露於反應熱所產生的高溫之結果，膠帶的黏著劑溶解，從晶圓剝下膠帶時，黏著劑會殘留於裝置。並且，若膠帶更加被暴露於高溫，則膠帶會溶化而開孔，恐有所謂的「膠帶燒傷」的現象發生之虞。
因此，本發明的目的是在於提供一種抑制氣泡產生於膠帶與保持面之間，防止膠帶燒傷的靜電吸盤。
若根據本發明，則可提供一種靜電吸盤，係具有使在一方的面貼附了膠帶的晶圓的該膠帶接觸而保持晶圓的保持面之靜電吸盤，其特徵為： 　　該膠帶，係包含：樹脂基材，及被形成於該樹脂基材的一方的面的糊層， 　　該靜電吸盤，係具備：複數的細孔，其係被形成於該保持面，連通至吸引源；複數的凹凸，其係被形成於該保持面上，被連接於該細孔；及電極，其係被配設於內部，使該細孔連通至吸引源，吸引保持晶圓時，被形成於該保持面上的該凹凸成為該保持面上的吸引路。
若根據此構成，則藉由在保持面形成有凹凸，即使晶圓經由膠帶來吸引保持保持面，也會因為凹凸與細孔連接，可抑制氣泡產生於膠帶與保持面之間。因此，即使之後電漿蝕刻等的預定的加工被實施，也可防止膠帶燒傷的發生。
若根據本發明，則可抑制氣泡產生於膠帶與保持面之間，防止膠帶燒傷。
在電漿蝕刻裝置中，研削後的晶圓會藉由靜電吸盤來吸附保持。圖1A~圖1C是使用以往的靜電吸盤來保持晶圓的情況的部分擴大剖面圖。圖1A是表示晶圓剛被投入至腔室之後的狀態，圖1B是表示腔室被減壓的狀態，圖1C是表示蝕刻中的狀態。
如圖1A~圖1C所示般，靜電吸盤2是被配置於構成減壓室的腔室C(參照圖2)內，在比晶圓W大徑的圓板的上面具有形成複數的細孔20的保持面21。複數的細孔20是在圓板內連接至共通的連通路22，被連接(連通)至吸引源23。
如此構成的靜電吸盤2，在靜電吸附晶圓W之前，作為預先暫時保持，晶圓W會藉由吸引源23的吸引力來暫時性地被吸引保持於保持面21。具體而言，如圖1A所示般，在晶圓W的下面是貼附有膠帶T作為保護構件，晶圓W是隔著該膠帶T來載置於保持面21上。保持面21是藉由負壓來吸引保持晶圓W及膠帶T，該負壓是藉由通過上述的複數的細孔20及連通路22來被吸引源23吸引而產生。
此時，由於複數的細孔20會取預定的間隔來配置，因此膠帶T(晶圓W)的下面全體不會被均等地吸引保持於保持面21。具體而言，主要細孔20的周邊會被吸引，因此如圖1A所示般，在鄰接的細孔20之間有氣泡B產生於膠帶T的下面與保持面21之間的情形。此情況，膠帶T的下面為平坦，細孔20附近的膠帶T對於保持面21牢固緊貼，因此氣泡B是在鄰接的細孔20之間難以逃脫。
若上述氣泡B殘留於膠帶T與保持面21之間，則如圖1B所示般，藉由腔室C內被減壓，該氣泡B會膨脹。若在此狀態下實施電漿蝕刻，則會在工件(晶圓W及膠帶T)的一部分從保持面21浮起的狀態下，氣泡B的周邊藉由蝕刻的熱而被加溫。
特別是在蝕刻中，如圖1C所示般，冷卻水會流動於在靜電吸盤2的內部所形成的水夾套(water jacket) (未圖示)，可抑制靜電吸盤2及晶圓W的異常的溫度上昇。然而，如上述般，氣泡B產生之處的膠帶T的下面是未接觸於保持面21，因此該膠帶T不會被適當地冷卻。此結果，氣泡B的附近的膠帶T會暴露於高溫而燒傷，開孔，恐有所謂的「膠帶燒傷」的現象發生之虞。
為了抑制成為膠帶燒傷的原因的氣泡B的產生，亦可思考縮小細孔20的配置間隔(間距)。然而，細孔20的數量增加的結果，製造靜電吸盤2時的機械加工的工數會增加，因此由製造成本的觀點不太理想。
可是，靜電吸盤2是保持面21與晶圓W的被保持面(在圖1是膠帶T的下面)的接觸面積越大，越可提高其保持力，可安定地吸引保持晶圓W。因此，靜電吸盤2的保持面21是有被鏡面加工的情形。
並且，被貼附於晶圓W的膠帶T的樹脂基材是依其材質而硬度不同。例如，膠帶T的樹脂基材是可使用如聚烯烴(PO)或聚氨酯(PU)等的比較柔的材質，或如聚對苯二甲酸(PET)般比較硬的材質。
當膠帶T的樹脂基材為比較硬的材質時，即使靜電吸盤2的保持面21為鏡面加工，氣泡也難進入保持面21與膠帶T之間。因此，不影響晶圓W的保持力，上述的膠帶燒傷的問題也難發生。
另一方面，當膠帶T的樹脂基材為比較柔的材質時，若靜電吸盤2的保持面21為鏡面加工，則會有形成保持面21與膠帶T緊貼的部分及氣泡進入的部分的情形。此結果，如上述般，有可能在減壓時氣泡膨脹，在蝕刻時引起膠帶燒傷，估計蝕刻無法正常地實施。
於是，本案發明者等是著眼於靜電吸盤2的保持面21的表面形狀(保持面21的平坦度)，想到在以保持面21保持晶圓W時，抑制氣泡B產生於膠帶T與保持面21之間。
具體而言，在本實施形態中，對靜電吸盤4的保持面41賦予微細的傷痕(凹凸D)，設為形成凹凸面(與保持面41同義)的構成(參照圖2及圖3)。藉此，即使假設在膠帶T與保持面41之間形成氣泡，凹凸D與細孔40會被連通(連接)，在保持面41上形成吸引路。氣泡通過該吸引路來被吸引至吸引源43，因此可除去氣泡。所以，氣泡B難產生於膠帶T的下面與保持面41之間，即是在之後實施電漿蝕刻，也可防止膠帶燒傷的發生。
其次，參照圖2及圖3來說明有關本實施形態的電漿蝕刻裝置。圖2是本實施形態的電漿蝕刻裝置的剖面模式圖。圖3是表示本實施形態的靜電吸盤的一例的立體圖。另外，在以下基於説明的方便起見，一部分以同樣的符號來表示在圖1已經出現的構成。
並且，在本實施形態中，舉電容結合型電漿(CCP：Capacitively Coupled Plasma)式的電漿蝕刻裝置為例進行說明，但不限於此。電漿蝕刻裝置是亦可為感應結合型電漿(ICP：Inductively Coupled Plasma)的電漿蝕刻裝置或其他的各種電漿蝕刻裝置。
如圖2所示般，電漿電漿蝕刻裝置1是被構成為在區劃預定的減壓室(腔室C)的框體部10內電漿蝕刻晶圓W而除去研削痕。在框體部10是設有：用以導入反應氣體等的導入口11，及用以排出反應氣體等的排氣口12。在腔室C內，作為形成電場的下部電極單元之靜電吸盤4與上部電極單元5會在上下方向取預定的間隔來對向配設。
加工對象的晶圓W是被形成大致圓板狀的矽(Si)、砷化鎵(GaAs)等的半導體晶圓，在下面貼附有膠帶T作為保護構件。晶圓W是不限於半導體晶圓，只要是成為保持對象，什麼樣的東西皆可。例如，晶圓W是亦可為以藍寶石或碳化矽所形成的光裝置晶圓。
膠帶T是在樹脂基材的一方的面(在圖2是上面)形成糊層(皆未圖示)而構成。樹脂基材是例如以聚烯烴(PO)或聚氨酯(PU)等的比較柔的材質所形成。另外，樹脂基材的材質是不限於此，可適當變更。
如圖2及圖3所示般，靜電吸盤4是藉由陶瓷等的材質來形成比晶圓W大徑的圓板狀。靜電吸盤4是具有在上面形成複數的細孔40(吸引口)的保持面41。複數的細孔40是比晶圓W的外緣還內側的範圍取預定間隔來配置。複數的細孔40是在圓板內連接至共通的連通路42，經由未圖示的閥來被連接(連通)至吸引源43。
並且，在保持面41上是藉由噴砂加工或研磨加工或研削加工等來形成無數的微細的凹凸D(以研削加工來形成凹凸D時是使研削痕交叉而形成凹凸D)。亦即，保持面41是藉由無數的凹凸D來成為具有預定的表面粗度的凹凸面。另外，保持面41的表面粗度是可適當變更成在與膠帶T之間不使氣泡產生的程度，又不損晶圓W的保持力的程度。而且，詳細後述，該凹凸D是被連接(連通)至複數的細孔40，在保持面41上形成吸引路。
在靜電吸盤4中，保持面41上的空氣會通過複數的細孔40及連通路42來被吸引源43吸引，藉此在保持面41上產生負壓。藉此，可在保持面41暫時保持晶圓W。
並且，在靜電吸盤4的內部是除了上述的構成以外，配設有一對的電極(下部電極)44。一對的電極44是在至保持面41的大致全體的範圍被埋入於圓板內。各電極44是被連接至直流電源45。藉由從直流電源45施加直流電力至一對的電極44，可使靜電產生於保持面41上。藉此，可在保持面41吸附保持(正式保持)晶圓。另外，電極44是亦可以單極構造及雙極構造的任一的構造所形成。
並且，靜電吸盤4是被連接至高頻電源46。另一方面，上部電極單元5是具備與晶圓W的上面對向的下面。上部電極單元5是被連接至接地51。
其次，參照圖2及圖4來說明有關本實施形態的電漿蝕刻裝置的動作。圖4是以靜電吸盤來吸引晶圓時的剖面模式圖，圖4A、圖4B是表示其動作遷移圖。
本實施形態的電漿蝕刻裝置是主要經由以下的3個的工程來除去晶圓的研削痕。本實施形態的電漿蝕刻方法是具備：以靜電吸盤4來吸引保持晶圓W的吸引保持工程(暫時保持工程)，及以靜電吸盤4來靜電力保持晶圓W的靜電力保持工程(正式保持工程)，及電漿蝕刻晶圓W的露出面(上面)的電漿蝕刻工程。
首先，說明有關吸引保持工程。如圖2所示般，晶圓W是藉由未圖示的搬送手段來搬送至電漿蝕刻裝置1的腔室C內。具體而言，晶圓W是以靜電吸盤4的保持面41的中心與晶圓W的中心一致的方式定位，晶圓W是隔著膠帶T來載置於保持面41上。
如上述般，在保持面41上是形成有無數的凹凸D。如圖4A所示般，在晶圓W被載置於保持面41上的狀態中，在膠帶T的下面與保持面41之間是藉由無數的凹凸D來形成些微的間隙G。該間隙G是被連接至複數的細孔40。亦即，該間隙G是構成被形成於保持面41的吸引路。
複數的細孔40及連通路42會被連通至吸引源43，一旦藉由吸引源43來吸引保持面41上的空氣，則在保持面41上產生負壓。此時，因為在間隙G也產生負壓，所以比較柔的材質的膠帶T會藉由負壓來被拉至保持面41側。
此結果，膠帶T的下面是如圖4B所示般，按照保持面41的凹凸形狀來緊貼於保持面41。如此，膠帶T會被緊貼於保持面41而使填埋間隙G，因此氣泡難以產生於膠帶T與保持面41之間。另外，即使假設產生氣泡，也會藉由吸引源43之吸引被繼續，上述間隙G成為流路而氣泡慢慢地被吸引。此結果，可除去氣泡。
如此，在本實施形態中，敢於保持面41形成凹凸D(賦予傷痕)，使用該凹凸D作為吸引保持膠帶T時的流路(吸引路)。藉此，可極力抑制氣泡的產生。另外，是否氣泡變無，亦可藉由吸引時間或吸引壓的監視或目視等來判斷。藉由以上，可在保持面41暫時保持晶圓W。
其次，實施靜電力保持工程。如圖2所示般，在靜電力保持工程中，吸引源43之晶圓W的吸引保持會被解除，另一方面，藉由直流電力被供給至一對的電極44，在保持面41上產生靜電，晶圓W會藉由靜電力來隔著膠帶T被吸附保持(靜電力保持)於保持面41。從吸引源43之晶圓W的吸引保持，順暢地切換靜電力之晶圓W的吸附保持，藉此如圖4B所示般，可在膠帶T與保持面41之間無氣泡緊貼的狀態下，以保持面41來正式保持晶圓W。
然後，實施電漿蝕刻工程。在電漿蝕刻工程中，腔室C內會被減壓，從導入口11導入反應氣體至腔室C內。另外，由於在吸引保持工程，氣泡的產生會被抑制，因此即使腔室C內被減壓，也不會有氣泡膨脹的情形。反應氣體是例如可使用六氟化硫(SF6)、四氟化碳(CF4)、三氟化氮(NF3)等的含氟的氟系安定氣體。
在以反應氣體覆蓋晶圓W的方式供給的狀態下，在靜電吸盤4與上部電極單元5之間施加高頻電壓，藉此反應氣體會被電漿化(激進(radical)化)。然後，藉由電漿化後的反應氣體，晶圓W的被研削面會藉由激進連鎖反應來被乾式蝕刻(各向同性蝕刻)，從晶圓W的被研削面除去研削痕，抗折強度會被提升。如上述般，由於在膠帶T與保持面41之間是未產生氣泡，因此即使實施蝕刻工程，也不會有膠帶燒傷發生的情形。另外，亦可使複數的導入口(未圖示)形成於上部電極單元5的下面，使從上部電極單元5供給反應氣體。
如以上般，若根據本實施形態，則對靜電吸盤4的保持面41賦予傷痕，形成無數的不規則的凹凸D。藉此，即使以在保持面41上產生的負壓來吸引膠帶T的下面，也可藉由連接凹凸D與細孔40，吸引凹凸D與保持面41的間隙。因此，在膠帶T的下面與保持面41之間難產生氣泡。即使假設產生氣泡，還是可藉由使用凹凸D作為吸引路來除去氣泡。然後，在無氣泡的狀態下實施電漿蝕刻工程，藉此可防止膠帶燒傷的發生。並且，不須為了防止氣泡產生而增加細孔40的數量，因此可使用既存的構成，也不會成為成本增加的要因。
另外，在上述實施形態中，雖舉電漿蝕刻裝置為例進行，但並非限於此構成。本發明的靜電吸盤是什麼樣的裝置也適用。
又，上述實施形態的各工程終究只是其一例，各工程的裝置的動作或操作員的動作的順序是可適當變更。又，亦可全自動實施各工程，或亦可由操作員手動實施。
又，上述實施形態中，膠帶T的樹脂基材為以聚烯烴(PO)或聚氨酯(PU)等的比較柔的材質所形成的構成，但並非限於此構成。膠帶T的樹脂基材是例如亦可以如聚對苯二甲酸(PET)般比較硬的材質所形成。此情況，膠帶T是即使被吸引保持於保持面41，也不會有如圖4B般下面按照保持面41的凹凸D而緊貼的情形。
然而，如圖4A所示般，晶圓W是維持被形成於膠帶T的下面與保持面41之間的些微的間隙G來被吸引保持於保持面41，因此氣泡的產生會被抑制。即使假設產生氣泡，也會藉由吸引源43之吸引被繼續，上述間隙G成為流路而氣泡慢慢地被吸引。此結果，可除去氣泡。因此，若根據本實施形態的靜電吸盤4，則不論膠帶T的材質，亦即膠帶T的硬度，可抑制氣泡的產生，將晶圓W適當地吸引保持於保持面41。
又，雖說明了本實施形態及變形例，但亦可全體地或部分地組合上述實施形態及變形例，作為本發明的其他的實施形態。
又，本發明的實施形態並非限於上述的實施形態，亦可在不脫離本發明的技術思想的主旨範圍內實施各種變更、置換、變形。而且，若藉由技術的進步或衍生的別的技術，可用別的方法來實現本發明的技術思想，則亦可利用該方法來實施。因此，申請專利範圍是涵蓋本發明的技術思想的範圍內所含的全部的實施形態。
如以上説明般，本發明是具有可防止膠帶燒傷的效果，特別是在可適用於電漿蝕刻裝置的靜電吸盤有用。
T‧‧‧膠帶(樹脂基材)W‧‧‧晶圓4‧‧‧靜電吸盤41‧‧‧保持面(凹凸面)40‧‧‧細孔43‧‧‧吸引源44‧‧‧電極B‧‧‧氣泡D‧‧‧凹凸G‧‧‧間隙(吸引路)
圖1是使用以往的靜電吸盤來保持晶圓的情況的部分擴大圖。
圖2是本實施形態的電漿蝕刻裝置的剖面模式圖。
圖3是表示本實施形態的靜電吸盤的一例的立體圖。
圖4是以靜電吸盤來吸引晶圓時的模式圖。
4‧‧‧靜電吸盤
40‧‧‧細孔
41‧‧‧保持面(凹凸面)
42‧‧‧連通路
43‧‧‧吸引源
44‧‧‧電極
D‧‧‧凹凸
G‧‧‧間隙(吸引路)
T‧‧‧膠帶(樹脂基材)
W‧‧‧晶圓

Claims (1)

  1. 一種靜電吸盤，係具有使在一方的面貼附了膠帶的晶圓的該膠帶接觸而保持該晶圓的保持面之靜電吸盤，其特徵為：該膠帶，係包含：樹脂基材，及被形成於該樹脂基材的一方的面的糊層，該靜電吸盤，係具備：複數的細孔，其係被形成於該保持面，連通至吸引源；不規則的凹凸，其係被形成於該保持面上，被連接於該細孔；配設於內部的平行於該保持面的板狀的單極或一對的雙極的電極；及將避開該電極而形成於內部的該細孔連通至該吸引源的連通路，使該細孔連通至該吸引源，吸引保持該晶圓時，藉由該凹凸，被形成於該膠帶的下面與該保持面之間的間隙成為該保持面上的吸引路，若該保持面吸引該膠帶，則該間隙會填埋，經由該膠帶來吸引保持該晶圓之後，對該電極賦予直流電流而於該保持面靜電吸附該晶圓。
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