CN109256355B - 静电卡盘 - Google Patents

静电卡盘 Download PDF

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CN109256355B
CN109256355B CN201810744977.2A CN201810744977A CN109256355B CN 109256355 B CN109256355 B CN 109256355B CN 201810744977 A CN201810744977 A CN 201810744977A CN 109256355 B CN109256355 B CN 109256355B
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holding surface
wafer
electrostatic chuck
tape
holding
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CN109256355A (zh
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千东谦太
饭田英一
山田智広
西田吉辉
高桥宏行
藤谷凉子
横尾晋
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Disco Corp
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Abstract

提供静电卡盘，该静电卡盘抑制了在带与保持面之间产生气泡，防止带灼烧。静电卡盘(4)利用保持面(41)对在下表面粘贴有带(T)的晶片(W)进行保持，该静电卡盘(4)包含：多个细孔(40)，它们形成于保持面，与吸引源(43)连通；凹凸(D)，其形成在保持面上，与多个细孔连接；以及电极(44)，其配设在该静电卡盘(4)的内部。在使细孔与吸引源连通而对晶片进行吸引保持时，凹凸成为保持面上的吸引路。

Description

静电卡盘
技术领域
本发明涉及静电卡盘。
背景技术
在被磨削装置磨削后的晶片的被磨削面上残留有磨削痕，该磨削痕成为晶片的抗折强度降低的原因。因此，提出了通过等离子蚀刻将磨削痕从晶片的被磨削面去除的装置(例如，参照专利文献1)。等离子蚀刻装置经由开闭门将晶片从外部搬入到腔室(减压室)内，在对腔室内进行了减压的状态下提供蚀刻气体。并且，使等离子化的蚀刻气体与晶片进行反应而将磨削痕从被磨削面去除，抑制了因磨削完的晶片的磨削痕而导致的抗折强度的降低。
在这样的等离子蚀刻装置中，为了使腔室内为真空状态，保持晶片的卡盘工作台没有采用真空吸附式的卡盘工作台，而是采用了静电吸附式的卡盘工作台、即所谓的静电卡盘。
专利文献1：日本特开2016-143785号公报
另外，在晶片的下表面粘贴有带来作为保护部件，晶片隔着该带载置在静电卡盘的上表面上。在该情况下，有时在带与静电卡盘之间形成气泡(间隙)。为了消除蚀刻气体与晶片进行了反应的反应热，在静电卡盘的内部形成有供冷却水流通的冷却水路。当在形成有该气泡的状态下实施等离子蚀刻时，因气泡而导致静电卡盘的上表面没有与带接触，因此带未被冷却而被暴露于因反应热导致的高温中，其结果为，带的粘接剂融化，在将带从晶片剥离时，粘接剂残留在器件上。另外，当带被暴露于更高温度中时，带有可能融化而出现开孔，即产生所谓的“带灼烧”的现象。
发明内容
因此，本发明的目的在于，提供能够抑制在带与保持面之间产生气泡从而防止带灼烧的静电卡盘。
根据本发明，提供静电卡盘，该静电卡盘具有保持面，该保持面与在一个面上粘贴有带的晶片的该带接触而保持晶片，其中，该带包含树脂基材和形成在该树脂基材的一个面上的糊层，该静电卡盘具有：多个细孔，它们形成于该保持面，与吸引源连通；多个凹凸，它们形成在该保持面上，与该细孔连接；以及电极，其配设在该静电卡盘的内部，在使该细孔与吸引源连通而对晶片进行吸引保持时，形成在该保持面上的该凹凸成为该保持面上的吸引路。
根据该结构，通过在保持面上形成凹凸，即使晶片隔着带被保持面吸引保持，但由于凹凸与细孔连接，因此也能够抑制在带与保持面之间产生气泡。因此，即使之后实施等离子蚀刻等规定的加工，也能够防止产生带灼烧。
根据本发明，能够抑制在带与保持面之间产生气泡，防止带灼烧。
附图说明
图1的(A)、(B)和(C)是通过现有的静电卡盘对晶片进行保持的情况的局部放大图。
图2是本实施方式的等离子蚀刻装置的剖视示意图。
图3是示出本实施方式的静电卡盘的一例的立体图。
图4的(A)和(B)是通过静电卡盘对晶片进行吸引时的示意图。
标号说明
T：带(树脂基材)；W：晶片；4：静电卡盘；41：保持面(凹凸面)；40：细孔；43：吸引源；44：电极；B：气泡；D：凹凸；G：间隙(吸引路)。
具体实施方式
在等离子蚀刻装置中，磨削后的晶片被静电卡盘吸附保持。图1的(A)～图1的(C)是通过现有的静电卡盘对晶片进行保持的情况的局部放大剖视图。图1的(A)示出了晶片刚被投入到腔室之后的状态，图1的(B)示出了腔室被减压后的状态，图1的(C)示出了蚀刻中的状态。
如图1的(A)～图1的(C)所示，静电卡盘2配置在构成减压室的腔室C(参照图2)内，在直径比晶片W大的圆板的上表面具有形成有多个细孔20的保持面21。多个细孔20在圆板内与共同的连通路22相连，并与吸引源23连接(连通)。
在这样构成的静电卡盘2中，作为对晶片W进行静电吸附之前的临时保持，晶片W被吸引源23的吸引力暂时吸引保持在保持面21上。具体而言，如图1的(A)所示，在晶片W的下表面粘贴有带T来作为保护部件，晶片W隔着该带T载置在保持面21上。保持面21利用负压对晶片W和带T进行吸引保持，其中，该负压是通过穿过上述的多个细孔20和连通路22被吸引源23吸引而产生的。
此时，由于多个细孔20隔开规定的间隔配置，因此带T(晶片W)的下表面整体并不是被均匀地吸引保持在保持面21上。具体而言，由于主要是细孔20的周边被吸引，因此，如图1的(A)所示，有时在相邻的细孔20之间，在带T的下表面与保持面21之间产生气泡B。在该情况下，由于带T的下表面是平坦的，细孔20附近的带T与保持面21牢固地紧贴，因此气泡B难以在相邻的细孔20之间逃离。
当在带T与保持面21之间残存有上述气泡B时，如图1的(B)所示，因对腔室C内进行减压而使该气泡B膨胀。当在该状态下实施等离子蚀刻时，在工件(晶片W和带T)的一部分从保持面21浮起的状态下，气泡B的周边因蚀刻的热量而升温。
特别是在蚀刻中，如图1的(C)所示，冷却水在形成于静电卡盘2的内部的水套(未图示)中流动，抑制了静电卡盘2和晶片W的异常的温度上升。但是，如上所述，由于带T的产生了气泡B的部位的下表面不与保持面21接触，因此该带T未被适当地冷却。其结果为，气泡B的附近的带T被暴露于高温中，有可能产生被称为开孔的、所谓的“带灼烧”的现象。
为了抑制作为带灼烧的原因的气泡B的产生，也考虑了使细孔20的配置间隔(间距)变窄。但是，细孔20的数量增加的结果是，由于制造静电卡盘2时的机械加工的工时增加，因此从制造成本的观点来看不太优选。
另外，保持面21与晶片W的被保持面(在图1中是带T的下表面)之间的接触面积越大，越能够提高静电卡盘2的保持力，越能够稳定地对晶片W进行吸引保持。因此，有时对静电卡盘2的保持面21进行镜面加工。
另外，粘贴于晶片W的带T的树脂基材的硬度根据其材质而不同。例如，带T的树脂基材使用了聚烯烃(PO)、聚氨酯(PU)等比较柔软的材质，或如聚对苯二甲酸乙二醇酯(PET)那样比较硬的材质。
在带T的树脂基材是比较硬的材质的情况下，即使静电卡盘2的保持面21为镜面加工，气泡也不容易进入到保持面21与带T之间。因此，不会对晶片W的保持力带来影响，也不容易引起上述的带灼烧的问题。
另一方面，在带T的树脂基材是比较柔软的材质的情况下，当静电卡盘2的保持面21为镜面加工时，有时会形成保持面21与带T紧贴的部分和气泡所进入的部分。其结果为，如上所述，可想到在减压时气泡发生膨胀而有可能在蚀刻时引起带灼烧，无法正常地实施蚀刻。
因此，本申请发明人等着眼于静电卡盘2的保持面21的表面形状(保持面21的平坦度)，想到了在利用保持面21保持晶片W时，抑制在带T与保持面21之间产生气泡B。
具体而言，在本实施方式中，采用了在静电卡盘4的保持面41上设置细微的瑕疵(凹凸D)而形成凹凸面(与保持面41意思相同)的结构(参照图2和图3)。由此，即使假设在带T与保持面41之间形成了气泡，但由于凹凸D与细孔40连通(连接)，在保持面41上形成吸引路，气泡通过该吸引路被吸引源43吸引，因此也能够将气泡去除。因此，由于不容易在带T的下表面与保持面41之间产生气泡B，因此即使之后实施等离子蚀刻，也能够防止产生带灼烧。
接着，参照图2和图3对本实施方式的等离子蚀刻装置进行说明。图2是本实施方式的等离子蚀刻装置的剖视示意图。图3是示出本实施方式的静电卡盘的一例的立体图。另外，以下，为了便于说明，对在图1中已经示出的结构的一部分用相同的标号示出。
另外，在本实施方式中，例示了电容耦合型等离子体(CCP：Capacitively CoupledPlasma)式的等离子蚀刻装置来进行说明，但并不限定于此。等离子蚀刻装置也可以是感应耦合型等离子体(ICP：Inductively Coupled Plasma)的等离子蚀刻装置或其他的各种等离子蚀刻装置。
如图2所示，等离子蚀刻装置1构成为在划分出规定的减压室(腔室C)的壳体部10内对晶片W进行等离子蚀刻而将磨削痕去除。在壳体部10上设置有：导入口11，其用于导入反应气体等；以及排气口12，其用于排出反应气体等。在腔室C内，作为形成电场的下部电极单元的静电卡盘4与上部电极单元5在上下方向上隔开规定的间隔对置配设。
作为加工对象的晶片W是形成为大致圆板状的硅(Si)、砷化镓(GaAs)等半导体晶片，在下表面粘贴有带T来作为保护部件。晶片W并不限于半导体晶片，只要成为保持对象，则可以是任何晶片。例如，晶片W也可以是由蓝宝石或碳化硅形成的光器件晶片。
带T是在树脂基材的一个面(在图2中是上表面)上形成糊层(均未图示)而构成的。树脂基材例如由聚烯烃(PO)或聚氨酯(PU)等比较柔软的材质形成。另外，树脂基材的材质并不限定于此，可以进行适当变更。
如图2和图3所示，静电卡盘4由陶瓷等材质形成为直径比晶片W大的圆板状。静电卡盘4在上表面具有形成有多个细孔40(吸引口)的保持面41。多个细孔40在比晶片W的外缘靠内侧的范围内隔开规定的间隔配置。多个细孔40在圆板内与共同的连通路42相连，经由未图示的阀与吸引源43连接(连通)。
另外，在保持面41上通过喷砂加工、研磨加工或者磨削加工等形成无数个细微的凹凸D(在通过磨削加工形成凹凸D时使磨削痕交叉而形成凹凸D)。即，保持面41成为因无数个凹凸D而具有规定的表面粗糙度的凹凸面。另外，保持面41的表面粗糙度能够适当变更为在保持面41与带T之间不产生气泡的程度，并且不损失晶片W的保持力的程度。另外，在后面对详细内容进行说明，但该凹凸D与多个细孔40连接(连通)，在保持面41上形成吸引路。
在静电卡盘4中，保持面41上的空气穿过多个细孔40和连通路42被吸引源43吸引，从而在保持面41上产生负压。由此，能够将晶片W临时保持在保持面41上。
另外，在静电卡盘4的内部，除了上述的结构之外，还配设有一对电极(下部电极)44。一对电极44在保持面41的大致整个范围内被埋入到圆板内。各电极44与直流电源45连接。通过从直流电源45向一对电极44施加直流电力，能够在保持面41上产生静电。由此，能够将晶片吸附保持(主保持)在保持面41上。另外，电极44可以形成为单极构造和双极构造中的任意的构造。
另外，静电卡盘4与高频电源46连接。另一方面，上部电极单元5具有与晶片W的上表面对置的下表面。上部电极单元5与接地端51连接。
接着，参照图2和图4对本实施方式的等离子蚀刻装置的动作进行说明。图4的(A)和(B)是通过静电卡盘来吸引晶片时的剖面示意图，图4的(A)、图4的(B)表示其动作转换图。
本实施方式的等离子蚀刻装置主要通过以下的3个工序来去除晶片的磨削痕。本实施方式的等离子蚀刻方法具有如下的工序：吸引保持工序(临时保持工序)，利用静电卡盘4对晶片W进行吸引保持；静电力保持工序(主保持工序)，利用静电卡盘4对晶片W进行静电力保持；以及等离子蚀刻工序，对晶片W的露出面(上表面)进行等离子蚀刻。
首先，对吸引保持工序进行说明。如图2所示，晶片W被未图示的搬送构件搬送至等离子蚀刻装置1的腔室C内。具体而言，晶片W被定位成静电卡盘4的保持面41的中心与晶片W的中心一致，晶片W隔着带T载置在保持面41上。
如上所述，在保持面41上形成有无数个凹凸D。如图4的(A)所示，在晶片W被载置于保持面41上的状态下，在带T的下表面与保持面41之间因无数个凹凸D而形成有细小的间隙G。该间隙G与多个细孔40连接。即，该间隙G构成形成于保持面41的吸引路。
多个细孔40和连通路42与吸引源43连通，当通过吸引源43吸引保持面41上的空气时，在保持面41上产生负压。此时，由于在间隙G中也产生负压，因此比较柔软的材质的带T被负压吸引在保持面41侧。
其结果为，如图4的(B)所示，带T的下表面以与保持面41的凹凸形状相仿的方式与保持面41紧贴。这样，由于带T以填平间隙G的方式与保持面41紧贴，因此不容易在带T与保持面41之间产生气泡。另外，即使假设产生了气泡，通过使吸引源43继续进行吸引，上述间隙G成为流路而缓慢地吸引气泡。其结果为，能够将气泡去除。
这样，在本实施方式中，在保持面41上特意形成凹凸D(设置瑕疵)，使用该凹凸D来作为对带T进行吸引保持时的流路(吸引路)。由此，能够尽可能地抑制气泡的产生。另外，对于气泡是否消失，也可以通过监视吸引时间或吸引压、或者通过目视等来进行判断。以上，能够利用保持面41来临时保持晶片W。
接着，实施静电力保持工序。如图2所示，在静电力保持工序中，解除吸引源43对晶片W的吸引保持，另一方面，通过向一对电极44提供直流电力而在保持面41上产生静电，通过静电力将晶片W隔着带T吸附保持(静电力保持)在保持面41上。通过从基于吸引源43对晶片W的吸引保持顺利地切换至基于静电力对晶片W的吸附保持，如图4的(B)所示，能够在带T与保持面41之间不存在气泡而紧贴的状态下，利用保持面41对晶片W进行主保持。
然后，实施等离子蚀刻工序。在等离子蚀刻工序中，对腔室C内进行减压而从导入口11向腔室C内导入反应气体。另外，由于在吸引保持工序中抑制了气泡的产生，因此即使对腔室C内进行减压，也不会出现气泡膨胀。作为反应气体，例如使用六氟化硫(SF6)、四氟化碳(CF4)、三氟化氮(NF3)等含氟的氟系稳定气体。
在以覆盖晶片W的方式提供反应气体的状态下，通过在静电卡盘4与上部电极单元5之间施加高频电压而使反应气体等离子化(自由基化)。然后，利用等离子化的反应气体使晶片W的被磨削面通过自由基连锁反应被干刻蚀(各向同性蚀刻)，将磨削痕从晶片W的被磨削面去除而提高抗折强度。如上所述，由于在带T与保持面41之间不产生气泡，因此即使实施蚀刻工序，也不会产生带灼烧。另外，也可以在上部电极单元5的下表面形成多个导入口(未图示)，从上部电极单元5提供反应气体。
如上所述，根据本实施方式，在静电卡盘4的保持面41上设置瑕疵而形成无数个不规则的凹凸D。由此，即使通过在保持面41上产生的负压对带T的下表面进行吸引，也能够使凹凸D与细孔40连接，对凹凸D与保持面41之间的间隙进行吸引。因此，在带T的下表面与保持面41之间不容易产生气泡。即使假设产生了气泡，通过使用凹凸D来作为吸引路，也能够将气泡去除。并且，通过在无气泡的状态下实施等离子蚀刻工序，能够防止产生带灼烧。另外，由于无需为了防止气泡产生而增加细孔40的数量，因此能够使用现有的结构，不会成为成本上升的原因。
另外，在上述实施方式中，例示了等离子蚀刻装置来进行说明，但不限定于该结构。本发明的静电卡盘4可以使用在任何装置中。
另外，上述实施方式的各工序只不过是示出了一例，能够适当变更各工序的装置的动作和操作员的动作的顺序。另外，可以全自动地实施各工序，也可以由操作员手动实施。
另外，在上述实施方式中，采用了带T的树脂基材由聚烯烃(PO)、聚氨酯(PU)等比较柔软的材质形成的结构，但并不限定于该结构。带T的树脂基材例如也可以由聚对苯二甲酸乙二醇酯(PET)那样比较硬的材质形成。在该情况下，即使带T被吸引保持在保持面41上，也不会像图4的(B)那样下表面与保持面41的凹凸D相仿地紧贴。
但是，如图4的(A)所示，由于晶片W维持着形成在带T的下表面与保持面41之间的细小的间隙G而吸引保持在保持面41上，因此抑制了气泡的产生。即使假设产生了气泡，通过使吸引源43继续进行吸引，上述间隙G成为流路而缓慢地吸引气泡。其结果为，能够将气泡去除。因此，根据本实施方式的静电卡盘4，无论带T的材质(即，带T的硬度)如何，都能够抑制气泡的产生，将晶片W适当地吸引保持于保持面41。
另外，对本实施方式和变形例进行了说明，但作为本发明的其他实施方式，也可以对上述实施方式和变形例进行整体或局部地组合。
另外，本发明的实施方式不限定于上述的实施方式，也可以在不脱离本发明的技术思想的主旨的范围内进行各种变更、置换、变形。而且，如果因技术的进步或衍生出的其他技术而能够利用其他方法来实现本发明的技术思想，则也可以使用其他方法来实施。因此，权利要求书覆盖了包含在本发明的技术思想的范围内的所有实施方式。
如以上说明的那样，本发明具有能够防止带灼烧的效果，特别是对能够应用于等离子蚀刻装置的静电卡盘有用。

Claims (1)

1.一种静电卡盘，其具有保持面，该保持面与在一个面上粘贴有带的晶片的该带接触而保持晶片，其中，
该带包含树脂基材和形成在该树脂基材的一个面上的糊层，
该静电卡盘具有：
多个细孔，它们形成于该保持面，与吸引源连通；
不规则的凹凸，其形成在该保持面上，与该细孔连接；
与该保持面平行的板状的单极的电极或一对的双极的电极，其配设在该静电卡盘的内部；以及
连通路，其将避开该电极而形成于该静电卡盘的内部的该细孔与吸引源连通，
在使该细孔与吸引源连通而对晶片进行吸引保持时通过该凹凸而在该带的下表面与该保持面之间形成的间隙成为该保持面上的吸引路，当该保持面吸引该带时，该间隙被填平，在隔着该带对晶片进行吸引保持之后，对该电极赋予直流电流而利用该保持面对晶片进行静电吸附。
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