CN108461397B - 等离子蚀刻方法 - Google Patents
等离子蚀刻方法 Download PDFInfo
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Abstract
提供等离子蚀刻方法,抑制带与保持面之间产生气泡,防止带焦糊。该等离子蚀刻方法在对下表面上粘贴有带(T)的晶片(W)进行了磨削加工之后,对晶片的被磨削面进行等离子蚀刻,该等离子蚀刻方法包含如下的工序:干燥工序,对带赋予热量而将带内的水分去除;静电保持工序,在干燥工序之后,对静电卡盘(4)的电极(44)提供直流电力而产生静电,对晶片进行静电保持;以及蚀刻工序,在静电保持工序之后,对减压室(C)进行减压,利用等离子化后的反应气体对晶片的被磨削面进行等离子蚀刻。
Description
技术领域
本发明涉及等离子蚀刻方法。
背景技术
在磨削装置进行了磨削后的晶片的被磨削面上残留有磨削痕,该磨削痕成为晶片的抗弯强度降低的原因。因此,提出了通过等离子蚀刻将磨削痕从晶片的被磨削面去除的装置(例如,参照专利文献1)。等离子蚀刻装置经由开闭门将晶片从外部搬入至减压室(腔室)内,在对减压室内进行了减压的状态下提供蚀刻气体。并且,使等离子化后的蚀刻气体与晶片发生反应而将磨削痕从被磨削面去除,从而抑制磨削完成的晶片的磨削痕所导致的抗弯强度的降低。
专利文献1:日本特开2016-143785号公报
在基于磨削装置的磨削中,向晶片和磨削磨具提供磨削水而将磨削加工带来的热去除。特别是磨削后的晶片是湿润的,因此在将该晶片投入至减压室之前需要预先使其干燥。因此,考虑对晶片和带吹送干燥空气而预先将正面的水去除。但是,虽然通过干燥空气的吹送将晶片和带的正面干燥,但内部的干燥并不充分。因此,有时当进行减压时存在于内部的水分发生气化而在带与静电卡盘之间形成气泡(间隙)。对于静电卡盘而言,在其内部形成有使冷却水流通的冷却水路,该冷却水用于将蚀刻气体与晶片反应的反应热去除。当在形成有该气泡的状态下实施等离子蚀刻时,由于气泡会导致带不与静电卡盘接触,因此带不被冷却而是暴露在反应热所导致的高温下,其结果是,带的粘接剂熔化,当将带从晶片剥离时,粘接剂粘附在器件上。另外,当带进一步暴露在高温下时,担心产生带熔化而开孔的所谓的“带焦糊”现象。
发明内容
由此,本发明的目的在于提供能够防止带焦糊的等离子蚀刻方法。
根据本发明,提供等离子蚀刻方法,在一边对一个面上粘贴有带的晶片的另一个面提供磨削水一边利用磨削磨具进行了磨削之后,利用等离子蚀刻装置对晶片的被磨削面进行等离子蚀刻,其中,该等离子蚀刻装置包含:静电卡盘,其对配设在内部的电极提供直流电力,利用静电力隔着该带对晶片进行保持;以及减压室,其收纳对晶片进行保持的该静电卡盘,对该减压室进行减压并使所提供的反应气体等离子化,从而对晶片进行等离子蚀刻,该等离子蚀刻方法具有如下的工序:干燥工序,对该带赋予热量而将带内的水分去除;静电保持工序,在该干燥工序之后,对该静电卡盘的该电极提供直流电力而产生静电,对晶片进行静电保持;以及蚀刻工序,在该静电保持工序之后,对该减压室进行减压,利用等离子化后的反应气体对该静电卡盘所保持的晶片的被磨削面进行等离子蚀刻。
根据该结构,即使由于磨削加工而在带中吸收了磨削水,也能够通过对带进行积极地加热而将带内的水分去除。由此,即使在蚀刻工序时减压室进行减压,水分也不会从带中流出,能够防止带与静电卡盘的保持面之间产生气泡。由此,能够利用等离子蚀刻防止产生带焦糊。
根据本发明,能够抑制带与静电卡盘的保持面之间产生气泡,能够防止带焦糊。
附图说明
图1的(A)、(B)、(C)是利用以往的方法对晶片进行保持时的局部放大剖视图。
图2是示出本实施方式的干燥工序的一例的示意性剖视图。
图3是示出本实施方式的静电保持工序和蚀刻工序的一例的示意性剖视图。
标号说明
T:带;W:晶片;B:气泡;C:减压室;4:静电卡盘;44:电极。
具体实施方式
在等离子蚀刻装置中,通过配设在减压室内的静电卡盘对磨削后的晶片进行吸附保持。在对减压室内进行了减压之后,提供反应气体(蚀刻气体)。然后,对反应气体提供高频电力从而使反应气体等离子化,利用等离子化后的反应气体对晶片进行等离子蚀刻。
在这样的等离子蚀刻装置中,如上所述需要对减压室内进行减压。减压室的减压时间取决于减压室内的湿度,因此不太优选将加工后(例如磨削加工后)的湿润的晶片搬送至减压室内。因此,考虑利用干燥空气对加工后的晶片进行吹气(air blow)等而对正面预先进行干燥。
图1是利用以往的方法对晶片进行保持时的局部放大剖视图。图1的(A)示出晶片刚被磨削加工后的状态,图1的(B)示出对减压室进行了减压的状态,图1的(C)示出蚀刻中的状态。如图1所示,在晶片W的下表面上,作为保护部件粘贴有带。带T是在基材的正面上涂布糊料而形成的,糊料侧作为带T的粘贴面(粘接面)。基材例如由聚氨酯、聚对苯二甲酸乙二醇酯(PET)、聚烯烃等合成树脂形成,略微具有吸水性(吸湿性)。
如图1的(A)所示,磨削加工中,晶片W隔着带T被吸引保持在磨削装置的保持工作台6上,因此带T的基材侧不直接向外部露出,但是磨削水等加工水会从外周部分被吸收到基材内。因此,即使在搬送至减压室内时对晶片W的正面进行吹气,被吸收在带(基材)中的水分也无法被去除。其结果是,如图1的(B)所示,减压室被减压从而水分从基材内部流出并发生气化,有可能在带T与静电卡盘4的保持面41之间形成气泡B。
当以在带T与保持面41之间残留有气泡B的状态实施等离子蚀刻时,在工件(晶片W和带T)的一部分从保持面41浮起的状态下,气泡B的周边因蚀刻的热量而被加热。
特别是如图1的(C)所示,蚀刻中,冷却水在静电卡盘4的内部所形成的水套(未图示)中流动,能够抑制静电卡盘4和晶片W的异常的温度上升。但是,如上所述,产生了气泡B的部位的带T的下表面不与保持面41接触,因此该带T无法被适当地冷却。其结果是,有可能产生气泡B附近的带T暴露在高温下而焦糊、开孔的所谓的“带焦糊”的现象。
因此,本申请发明人着眼于带T(基材)的材质,发现带T的种类不同则吸水性不同,其结果是,在使减压室减压时带T内的水分从带T内流出而气化,在带T与静电卡盘4之间形成有气泡B。即,本发明的要点在于,考虑到带T吸收了磨削加工时的水,从而在蚀刻前预先对带T进行积极地加热而将带T内的水分去除。
具体而言,在本实施方式中,构成为:在利用静电卡盘4对晶片W进行保持之前,预先将晶片W载置于加热器工作台3,从加热器工作台3对带T赋予热量而将带T内的水分去除(参照图2)。由此,预先对带T进行干燥,因此在将晶片W搬送至静电卡盘4之后,即使减压室C被减压,也不会从带T中流出水分,不会在带T与静电卡盘4之间形成气泡。由此,即使实施等离子蚀刻,也能够防止产生带焦糊。
以下,参照附图对本实施方式的等离子蚀刻方法进行说明。图2是示出本实施方式的干燥工序的一例的示意性剖视图。图3是示出本实施方式的静电保持工序和蚀刻工序的一例的示意性剖视图。在本实施方式中,例示出电容耦合型等离子体(CCP:CapacitiveCoupled Plasma)的等离子蚀刻装置1作为减压处理装置来进行说明,但减压处理装置也可以是感应耦合型等离子体(ICP:Inductive Coupled Plasma)的等离子蚀刻装置或其他各种等离子蚀刻装置。另外,减压处理装置只要是在减压状态下对晶片进行处理的装置即可,例如可以是使膜在晶片的正面上生长的成膜装置。
本实施方式的等离子蚀刻方法是如下的方法:在利用磨削磨具对一个面(下表面)上粘贴有带T的晶片W的另一个面(上表面)进行了磨削之后,对晶片W的上表面(被磨削面)进行等离子蚀刻。具体而言,等离子蚀刻方法中,在提供磨削水而对晶片W的被磨削面进行了磨削加工之后,经由如下的工序来实施:干燥工序(参照图2),对晶片W的下表面的带T进行干燥;静电保持工序(参照图3),利用静电卡盘4对晶片W进行静电保持;以及蚀刻工序(参照图3),利用等离子化后的反应气体对晶片W的被磨削面进行等离子蚀刻。
另外,作为本实施方式的保持对象的晶片W是形成为大致圆板状的硅(Si)、砷化镓(GaAs)等半导体晶片,在其下表面上粘贴有带T作为保护部件。晶片W不限于半导体晶片,只要能够成为保持对象,则可以为任意晶片。例如晶片W可以是由蓝宝石或碳化硅形成的光器件晶片。另外,对于带T的材质也没有特别限定。例如带T是在基材的正面上涂布糊料而形成的,基材由聚氨酯、聚对苯二甲酸乙二醇酯(PET)、聚烯烃等合成树脂形成。
在本实施方式中,带T略微具有吸水性,设想下述情况:在之前的磨削工序中,一边对晶片W提供磨削水一边对正面(被磨削面)进行磨削加工,从而磨削水的一部分被带T吸收。
首先,对干燥工序进行说明。如图2所示,晶片W在通过搬送单元2被搬送至等离子蚀刻装置1的减压室C(参照图3)内之前,预先实施干燥工序。搬送单元2构成为对磨削后的晶片W的上表面进行保持而将其搬送至后述的静电卡盘4(参照图3)。
搬送单元2是对晶片W进行吸引保持并能够移动至任意位置的多孔卡盘,在圆板状的框体的下表面上形成有由陶瓷等多孔质材料构成的保持面20。能够通过产生于保持面20的负压对晶片W进行吸引保持。另外,搬送单元2构成为能够通过移动机构21在铅垂方向和水平方向上移动。
在干燥工序中,对带T赋予热量,带T被干燥从而带T内的水分被去除。具体而言,如图2所示,将加热器工作台3定位于搬送单元2所吸引保持的晶片W的下表面侧。加热器工作台3由直径与晶片W大致相同或比晶片W大的圆板形成,在其内部的大致整个区域内置有加热器30。在加热器30上连接有直流电源31。另外,在圆板内设置有对加热器工作台3的温度进行检测的温度传感器32。加热器工作台3通过加热器30预先被加热,例如调整加热器工作台3的温度以便使温度传感器32的输出值达到60度。
搬送单元2下降以便使带T的下表面与加热器工作台3的上表面抵接。然后,放置规定的时间(例如1分钟),从而对带T进行加热。由此,即使在带T在之前的磨削工序中吸收了磨削水的情况下,也能够将带T内的水分去除,即能够使带T干燥。
在该情况下,可以一边利用搬送单元2将晶片W按压至加热器工作台3一边对带T进行加热,也可以在解除搬送单元2对晶片W的吸引保持而使搬送单元2离开晶片W的状态下对带T进行加热。另外,在使搬送单元2从加热器工作台3离开的情况下,加热器工作台3优选构成为能够使多孔板与吸引源连通并在多孔板内配设加热器,以便对带T进行吸引保持。
另外,干燥工序不限于将晶片W载置于加热器工作台3上来实施的结构,可以适当进行变更。例如也可以不使用加热器工作台3,而是在利用搬送单元2对晶片W的上表面进行吸引保持的状态下从晶片W的下表面侧朝向带T吹送热风,从而对带T进行加热。另外,也可以在搬送单元2中具有加热器,在搬送单元2对晶片W进行吸引保持的状态下对晶片W进行加热而间接地使带T干燥。
另外,详细内容在后文进行叙述,干燥工序优选在利用蚀刻装置1对之前的晶片W进行等离子蚀刻期间实施。由此,能够有效利用蚀刻工序的等待时间,能够缩短工序整体的生产节拍。
接着,实施静电保持工序和蚀刻工序。这里,对等离子蚀刻装置1的概略结构进行说明。如图3所示,等离子蚀刻装置1具有划分出规定的减压室C的壳体部10。在壳体部10上设置有:用于导入反应气体等的导入口11、以及用于排出反应气体等的排气口12。
在减压室C内,在上下方向上隔开规定的间隔对置地配设有形成电场的作为下部电极组件的静电卡盘4以及上部电极组件5。
静电卡盘4由直径大于晶片W的圆板形成,具有在上表面上形成有多个细孔40(吸引口)的保持面41。多个细孔40在比晶片W的外缘靠内侧的范围隔开规定的间隔而配置。多个细孔40在圆板内与通用的连通路42连通并与吸引源43连接(连通)。保持面41被吸引源43吸引,从而在保持面41上产生负压。这样,吸引源43、多个细孔40和连通路42构成用于对晶片W进行吸引保持(临时保持)的吸引保持单元。
另外,在静电卡盘4的内部,除了上述结构之外,还配设有一对电极44。一对电极44在保持面41的大致整体的范围内埋入圆板内。各电极44与直流电源45连接。通过从直流电源45对一对电极44施加直流电力,能够在保持面41上产生静电。一对电极44和直流电源45构成用于利用静电力对晶片W进行吸附保持(正式保持)的静电保持单元。另外,电极44可以由单极构造和双极构造中的任意构造形成。
另外,静电卡盘4与高频电源46连接。另一方面,上部电极组件5具有与晶片W的上表面对置的下表面。上部电极组件5与地线51连接。
搬送单元2(参照图2)在对晶片W进行保持的状态下被移动至减压室C内,在按照使保持面41的中心与晶片W的中心一致的方式调整了位置之后,搬送单元2下降至晶片W的下表面与保持面41抵接的高度。然后,将搬送单元2对晶片W(的上表面)的吸引保持解除。另一方面,将多个细孔40和连通路42与吸引源43连通,由吸引源43在保持面41上产生吸引力,由此将晶片W的下表面隔着带T吸引保持(临时保持)在保持面41上。
如图3所示,在静电保持工序中,将吸引源43对晶片W的吸引保持解除,另一方面,对一对电极44提供直流电力,从而在保持面41上产生静电,通过静电力将晶片W隔着带T吸附保持(静电保持)在保持面41上,即进行正式保持。
然后,实施蚀刻工序。在蚀刻工序中,对减压室C内进行减压,并从导入口11向减压室C内导入反应气体。如上所述,在干燥工序中预先将带T内的水分去除,因此即使减压室C内减压,水分也不会从带T中流出。另外,作为反应气体,例如可使用六氟化硫(SF6)、四氟甲烷(CF4)、三氟化氮(NF3)等含氮的氟系稳定气体。
在按照覆盖晶片W的方式提供了反应气体的状态下,在静电卡盘4与上部电极组件5之间施加高频电压,从而反应气体被等离子化(自由基化)。然后,通过等离子化后的反应气体利用自由基连锁反应对晶片W的被磨削面进行干蚀刻(各向同性蚀刻),将磨削痕从晶片W的被磨削面去除,晶片W的抗弯强度提高。另外,可以在上部电极组件5的下表面上形成多个导入口(未图示)并从上部电极组件5提供反应气体。
如上所述,通过将带T内的水分去除,能够防止带焦糊。另外,优选在蚀刻工序中对接下来要蚀刻的晶片W实施干燥工序。由此,能够有效利用蚀刻工序所需的时间。
如上所述,根据本实施方式,即使由于磨削加工而在带T中吸收了磨削水,也能够通过利用干燥工序对带T积极地加热而预先将带T内的水分去除。由此,即使在蚀刻工序时对减压室进行减压,水分也不会从带T中流出,能够防止带T与静电卡盘4的保持面41之间产生气泡。由此,能够防止在等离子蚀刻中产生带焦糊。
另外,在上述实施方式中,例示了等离子蚀刻装置作为蚀刻装置来进行了说明,但不限于该结构。本发明的等离子蚀刻方法可以应用于任意的装置。
另外,上述实施方式中的各工序仅示出一例,各工序中的装置的动作及操作者的动作的顺序可以适当变更。另外,既可以以全自动的方式实施各工序,也可以例如由操作者手动实施干燥工序。
另外,在上述实施方式中,采用将加热器工作台3的温度调整为60度的结构,但不限于该结构。加热器工作台3的温度可以根据带T的材质及大小(晶片W的材质及大小)等适当变更。例如在带T的材质为吸水性高的材质、或者为比较大的尺寸的情况下,优选提高加热器工作台3的设定温度。
另外,在上述实施方式中,在干燥工序中,将加热器工作台3对带T的加热时间例如设定为1分钟,但不限于此,可以适当变更。如上所述,可以根据带T的材质及大小(晶片W的材质及大小)等适当变更。例如在带T的材质为吸水性高的材质、或者为比较大的尺寸的情况下,优选延长对带T的加热时间。
另外,对本实施方式和变形例进行了说明,但作为本发明的其他实施方式,也可以对上述实施方式和变形例进行整体或局部地组合。
另外,本发明的实施方式并不限于上述的实施方式,也可以在不脱离本发明的技术思想的主旨的范围内进行各种变更、置换、变形。进而,如果因技术的进步或衍生出的其他技术而利用其他方法实现本发明的技术思想,则也可以使用该方法进行实施。因此,权利要求书覆盖了能够包含在本发明的技术思想的范围内的所有实施方式。
如以上所说明的那样,本发明具有能够防止带焦糊的效果,特别是在等离子蚀刻方法中有用。
Claims (1)
1.一种等离子蚀刻方法,在一边对一个面上粘贴有带的晶片的另一个面提供磨削水一边利用磨削磨具进行了磨削之后,利用等离子蚀刻装置对晶片的被磨削面进行等离子蚀刻,其中,
该等离子蚀刻装置包含:
静电卡盘,其对配设在内部的电极提供直流电力,利用静电力隔着该带对晶片进行保持;以及
减压室,其收纳对晶片进行保持的该静电卡盘,对该减压室进行减压并使所提供的反应气体等离子化,从而对晶片进行等离子蚀刻,
该等离子蚀刻方法具有如下的工序:
干燥工序,在该干燥工序中,使用加热器工作台对该带赋予热量,根据该带的材质及大小对加热器工作台的温度和加热时间中的至少一者进行调整,以将残留在带内的水分去除;
静电保持工序,在该干燥工序之后,对该静电卡盘的该电极提供直流电力而产生静电,对晶片进行静电保持;以及
蚀刻工序,在该静电保持工序之后,对该减压室进行减压,利用等离子化后的反应气体对该静电卡盘所保持的晶片的被磨削面进行等离子蚀刻。
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JP2007287796A (ja) * | 2006-04-13 | 2007-11-01 | Disco Abrasive Syst Ltd | ウェーハの加工方法 |
JP2010239030A (ja) * | 2009-03-31 | 2010-10-21 | Lintec Corp | 半導体ウエハの加工方法 |
JP2013258203A (ja) * | 2012-06-11 | 2013-12-26 | Disco Abrasive Syst Ltd | ウェーハの加工方法 |
CN203200109U (zh) * | 2013-03-19 | 2013-09-18 | 中冶南方工程技术有限公司 | 一种反渗透浓水的处理系统 |
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JP2016207942A (ja) * | 2015-04-27 | 2016-12-08 | 株式会社ディスコ | ウエーハの乾燥方法及び加工装置 |
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CN108461397A (zh) | 2018-08-28 |
TWI729269B (zh) | 2021-06-01 |
TW201832288A (zh) | 2018-09-01 |
KR20180095444A (ko) | 2018-08-27 |
JP2018133505A (ja) | 2018-08-23 |
US10453719B2 (en) | 2019-10-22 |
US20180240690A1 (en) | 2018-08-23 |
SG10201801171WA (en) | 2018-09-27 |
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