TWI729269B - 電漿蝕刻方法 - Google Patents

電漿蝕刻方法 Download PDF

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TWI729269B
TWI729269B TW107105030A TW107105030A TWI729269B TW I729269 B TWI729269 B TW I729269B TW 107105030 A TW107105030 A TW 107105030A TW 107105030 A TW107105030 A TW 107105030A TW I729269 B TWI729269 B TW I729269B
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千東謙太
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日商迪思科股份有限公司
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Abstract

[課題] 抑制在膠帶與保持面間產生氣泡，並防止膠帶灼燒。[解決手段]一種電漿蝕刻方法，將下表面黏貼膠帶（T）的晶圓（W）進行研削加工後，對晶圓的被研削面進行電漿蝕刻，其包含：乾燥步驟，對膠帶賦予熱並去除膠袋內的水分；靜電力保持步驟，在乾燥步驟後對靜電卡盤（4）的電極（44）供給直流電並產生靜電，對晶圓進行靜電力保持；以及電漿蝕刻工程，在靜電力保持步驟之後，將減壓室（C）進行減壓，利用電漿化之反應氣體對晶圓的被研削面進行電漿蝕刻。

Description

電漿蝕刻方法
本發明係關於一種電漿蝕刻方法。
以研削裝置研削後的晶圓，其被研削面留有研削痕，該研削痕為使晶圓抗折強度降低的原因。因此有人提出以電漿蝕刻從晶圓的被研削面去除研削痕之裝置的提案（例如，參閱專利文獻1）。電漿蝕刻裝置為，透過開關門從外部將晶圓搬入減壓室（腔室）內，在將減壓室減壓的狀態下供給蝕刻氣體。然後，以電漿化的蝕刻氣體對晶圓產生反應並從被研削面去除研削痕，抑止因研削完成後的晶圓的研削痕引起之抗折強度下降。 [習知技術文獻] [專利文獻]
[專利文獻1]日本特開2016-143785號公報
[發明所欲解決的課題] 研削裝置之研削，係對晶圓和研削磨石供給研削水，去除研削加工產生的熱。特別是，因研削後的晶圓是濕潤的，故將該晶圓置入減壓室前需預先乾燥。因此，有人考慮將乾燥氣體吹附至晶圓與膠帶，預先去除表面的水。然而，晶圓與膠帶之表面藉由乾燥氣體的吹附而乾燥，但內部的乾燥並未充分。因此，減壓時內部水分汽化而在膠帶與靜電卡盤間形成氣泡（間隙）。 在靜電卡盤中，為去除蝕刻氣體與晶圓反應產生之反應熱，在內部形成使冷卻水流動的冷卻水路。在形成該氣泡的狀態下一旦實施電漿蝕刻時，膠帶因氣泡導致未接觸靜電卡盤，使膠帶未被冷卻，暴露在反應熱產生的高溫，結果膠帶的接著劑溶解，使膠帶從晶圓剝落時接著劑附著於晶圓。另外，若進一步暴露在高溫，則膠帶會熔出洞，發生所謂的「膠帶灼燒」現象。
因此，本發明的目的在於提供一種可防止膠帶灼燒的電漿蝕刻方法。 [解決課題的技術手段]
根據本發明，提供一種電漿蝕刻方法，在其中一表面黏貼膠帶之晶圓的另一表面供給研削水同時以研削磨石研削後，將晶圓的被研削面以電漿蝕刻裝置進行電漿蝕刻，該電漿蝕刻裝置包含：靜電卡盤，對配設在內部的電極供給直流電，以靜電力透過該膠帶保持晶圓；以及減壓室，容納保持晶圓的該靜電卡盤並進行減壓，將所供給的反應氣體電漿化且對晶圓進行電漿蝕刻，該電漿蝕刻方法包括：乾燥步驟，對該膠帶賦與熱並去除膠帶內的水分；靜電力保持步驟，在該乾燥步驟後，對該靜電卡盤的該電極供給直流電並產生靜電，對晶圓進行靜電力保持；以及蝕刻步驟，在該靜電力保持步驟後，將該減壓室減壓，利用電漿化之反應氣體對該靜電卡盤所保持的晶圓的被研削面進行電漿蝕刻。
根據這種構成，即使因研削加工使膠帶吸收研削水，也可因積極加熱膠帶，而能夠去除膠帶內的水分。因此，蝕刻步驟時即使減壓室減壓，水分也不會從膠帶出來，可防止膠帶與靜電卡盤的保持面間產生氣泡。因此，可防止因電漿蝕刻導致膠帶灼燒的發生。 [發明功效]
根據本發明，可抑制膠帶與靜電卡盤的保持面間產生氣泡，並防止膠帶灼燒。
在電漿蝕刻裝置中，以減壓室內所配置之靜電卡盤吸附保持研削後的晶圓。減壓室內減壓後，供給反應氣體（蝕刻氣體）。然後，藉由對反應氣體供給高頻電力，使反應氣體電漿化，以電漿化反應氣體蝕刻晶圓。
此類的電漿蝕刻裝置，必須如上述般對減壓室內進行減壓。因減壓室的減壓時間取決於減壓室內的濕度，不建議將加工後（例如研削加工後）潮濕的晶圓搬送至減壓室內。因此，考慮以乾燥空氣進行送風等至加工後的晶圓，使表面預先乾燥。
圖1為以習知方法保持晶圓的情況之局部放大剖面圖。圖1A表示晶圓進行研削加工後的狀態，圖1B表示減壓室減壓後的狀態，圖1C表示蝕刻中的狀態。如圖1所示，在晶圓W的下表面，黏貼著作為保護構件的膠帶T。膠帶T係在基材表面塗佈膠材所形成，膠材側即為膠帶T的黏貼面（黏著面）。基材由例如甲烷、聚對苯二甲酸乙二酯（PET）、聚烯烴等合成樹脂所形成，具有少量吸水性（吸濕性）。
研削加工中，如圖1A所示，為讓晶圓W透過膠帶T被吸引保持於研削裝置的保持台6，基材側並未直接露出於外部，但研削水等加工水從外周部分吸收至基材內。因此，搬送至減壓室內時就算對晶圓W表面進行了送風，膠帶（基材）所吸收的水分仍無法去除。其結果為，如圖1B所示，減壓室因減壓使基材內部的水分出來並汽化，恐在膠帶T與靜電卡盤4的保持面41間形成氣泡B。
在膠帶T與保持面41間殘留氣泡B的狀態下，若實施電漿蝕刻的話，在工件（晶圓W及膠帶T） 的一部分以從保持面41浮出的狀態下，氣泡B周圍因蝕刻的熱而加溫。
特別是在蝕刻中，如圖1C所示，冷卻水流經在靜電卡盤4的內部形成的水夾套（無圖示），抑制靜電卡盤4及晶圓W的異常溫度上升。然而，如上所示，產生氣泡B之處的膠帶T的下表面並未與保持面41接觸，因此該膠帶T並未適當冷卻。其結果為，氣泡B旁邊的膠帶T暴露於高溫且灼燒至破洞，發生所謂「膠帶灼燒」現象。
在此，本案發明者著眼於膠帶T（基材）的材質，依膠帶T的種類不同而有不同吸水性的結果，得知使減壓室減壓時膠帶T內的水分從膠帶Ｔ內出來並汽化，在膠帶T與靜電卡盤4間形成氣泡B。亦即，本發明的主題在於考慮到膠帶T會吸收研削加工時的水，在進行蝕刻前積極預先加熱並去除膠帶T內水分參閱。
具體而言本實施方式係作為以下構成：在以靜電卡盤4保持晶圓W之前，預先將晶圓W載置於加熱台3，從加熱台3賦予膠帶T熱以除去膠帶T內的水分（參閱圖2）。藉此，因預先乾燥膠帶T，將晶圓W搬送至靜電卡盤4後即使減壓室C被減壓，也沒有水分從膠帶T出來 ，不會在膠帶T與靜電卡盤4間形成氣泡。因此，就算實施電漿蝕刻也能防止發生膠帶灼燒。
以下，參閱附圖，說明本實施方法相關電漿蝕刻方法。圖2為表示本實施方式的乾燥步驟的一例之示意剖面圖。圖3為表示本實施方式的靜電力保持步驟及蝕刻步驟的一例之示意剖面圖。本實施方式雖以電容耦合電漿（Capacitively Coupled Plasma；CCP）的電漿蝕刻裝置1作為減壓處理裝置作為案例說明，但減壓處理裝置也可為感應偶合電漿（Inductively Coupled Plasma，ICP）的電漿蝕刻裝置或其他各種電漿蝕刻裝置。另外，減壓處理裝置，可為在減壓狀態處理晶圓的裝置，也可為例如在晶圓的表面成長出膜的成膜裝置。
本實施方式的電漿蝕刻方法為，在其中一表面（下表面）黏貼膠帶T之晶圓的另一表面（上表面）以研削磨石研削後，將晶圓的上表面（被研削面）進行電漿蝕刻。具體的電漿蝕刻方法經過以下步驟實施：乾燥步驟，供給研削水對晶圓W的被研削面進行研削加工後，乾燥晶圓W下表面的膠帶T（參閱圖2）；靜電力保持步驟，以靜電卡盤4對晶圓W進行靜電力保持（參閱圖3）；以及蝕刻步驟，以電漿化反應氣體對晶圓W的被研削面進行電漿蝕刻（參閱圖3）。
再者，晶圓W（即本實施方式的保持對象）係形成為大致圓板狀的矽（Si）、砷化鎵（GaAs）等半導體晶圓，下表面黏貼作為保護構件的膠帶T。晶圓W不僅限於半導體晶圓，只要是保持對象，甚麼樣的物體皆可。舉例而言，晶圓W也可為藍寶石或碳化矽所形成之光學元件晶圓。另外，膠帶T的材質也無特別限定。舉例而言，膠帶T是在基材表面塗佈膠材所形成，而基材由甲烷、聚對苯二甲酸乙二酯（PET）、聚烯烴等合成樹脂所形成。
在本實施方式中，係假設膠帶T具有少量吸水性，並在先前的研削步驟中，對晶圓W供給研削水的同時在表面（被研削面）進行研削加工，藉此使膠帶T吸收部分研削水。
首先，針對乾燥步驟進行說明。如圖2所示，以搬送手段2將晶圓W搬送到電漿蝕刻裝置1的減壓室C（參閱圖3）內之前，預先實施乾燥步驟。搬送手段2是以保持研削後的晶圓W的上表面並搬送至後述的靜電卡盤4（參閱圖3）的方式所構成。
搬送手段2，係吸引保持晶圓W且可移動到任意位置的多孔卡盤，且形成有保持面20，其在圓板狀框體的下表面以陶瓷等多孔材質構成。藉由保持面20所產生的負壓，可將晶圓W吸引保持。另外，搬送手段2，藉由移動機構21構成為可在垂直方向及水平方向上移動。
在乾燥步驟中，賦予膠帶T熱，藉由讓膠帶T乾燥而去除膠帶T內的水分。具體而言，由圖2所示，搬送手段2將吸引保持的晶圓W的下表面側定位於加熱台3。加熱台3，由與晶圓W大致相同直徑或以上的圓板所形成，且加熱器30橫跨內部的大致全部區域而被內置。加熱器30連接著直流電源31。另外，在圓板內，設有檢測加熱台3的溫度的溫度感測器32。加熱台3係以加熱器30預先加熱，舉例而言，以將溫度感測器32的輸出值設為60度之方式調整加熱台3的溫度。
搬送手段2以膠帶T的下表面與加熱台3的上表面抵接的方式而下降。接著，藉由放置預定時間（例如1分鐘），以加熱膠帶T。藉此，即使是膠帶T在先前的研削步驟中吸收了研削水的情況下，也可去除膠帶T內的水分，亦即可以使膠帶T乾燥。
在這種情況下，可由搬送手段2將晶圓W按壓於加熱台3並同時對膠帶T加熱，也可解除搬送手段2對晶圓W的吸引保持，在搬送手段2從晶圓W分開的狀態下加熱膠帶T。再者，從加熱平台3分開搬送手段2的情形時，加熱台3較佳為以吸引保持膠帶T的方式將多孔板設為可連通至吸引源，並配設加熱器於多孔板內。
另外，乾燥步驟並不限定於將晶圓W載置在加熱台3時實施的構成，可做適當變更。舉例而言，也可不使用加熱台3，在以搬送手段2吸引保持晶圓W的上表面的狀態下，從晶圓W的下表面側向膠帶T吹送熱風，加熱膠帶T。另外，也可在搬送手段2具備加熱器，在搬送手段2對晶圓W吸引保持的狀態下對晶圓W加熱，間接乾燥膠帶T。
另外，雖詳細如後述，乾燥步驟較佳為在先前的晶圓W在利用蝕刻裝置1 進行電漿蝕刻的期間實施 。藉此，可有效活用蝕刻步驟的等待時間，也可縮短整體步驟的節拍時間（takt time）。
接著實施靜電力保持步驟和蝕刻步驟。在此說明電漿蝕刻裝置1的概略構成。如圖3所示，電漿蝕刻裝置1具備劃分出預定的減壓室C之框體部10。在框體部10設有用於導入反應氣體等的導入口11、與用於排出反應氣體等的排氣口12。
在減壓室C內，作為形成電場的下部電極單位之靜電卡盤4和上部電極單元5，在上下方向上空開預定的間隔而對向配設。
靜電卡盤4，以比晶圓W直徑大的圓板形成，具有上表面形成多個細孔40（吸引口）的保持面41。多個細孔40在比晶圓W的外緣更內側的範圍中空開預定的間隔而配置。多個細孔40在圓板內和共通的連通路42連接，並連接（連通）吸引源43。保持面41受吸引源43拉引，藉此在保持面41上產生負壓。如此般，吸引源43、多個細孔40及連通路42，構成用於吸引保持（暫時保持）晶圓W的吸引保持手段。
另外，在靜電卡盤4的內部，除了上述構成，還配設有一對電極44。一對電極44在保持面41的大致全部範圍中埋在圓板內。各電極44連接於直流電源45。藉由從直流電源45施加直流電至一對電極44，能夠在保持面41上產生靜電。一對電極44及直流電源45構成靜電保持手段，其用於以靜電力吸附保持（真正保持）晶圓W。再者，電極44可由單極構造或雙極構造任一種構造所形成。
另外，靜電卡盤4與高頻電源46連接。另一方面，上部電極單元5具備與晶圓W上表面相對的下表面。上部電極單元5與接地線51連接。
搬送手段2（參閱圖2）在保持晶圓W的狀態下移動至減壓室C內，調整位置以使保持面41的中心與晶圓W的中心成一致後，使晶圓W下表面下降至與保持面41抵接的高度。然後，解除搬送手段2對晶圓W（的上表面）的吸引保持。另一方面，多個細孔40及連通路42和吸引源43連通，從吸引源43在保持面41上產生吸引力，藉此晶圓W的下表面透過膠帶R吸引保持（暫時保持）於保持面41上。
靜電力保持步驟，如圖3所示，解除吸引源43對晶圓W的吸引保持，另一方面藉由對一對電極44供給直流電而在保持面41上產生靜電，以靜電力將晶圓W透過膠帶T吸著保持（靜電力保持）在保持面41上，即為真正保持。
接著，實施蝕刻步驟。蝕刻步驟為，對減壓室C內進行減壓，且反應氣體從導入口11導入減壓室C內。如同上述般，在乾燥步驟中，因預先去除膠帶T內的水分，即使減壓室C內減壓，水分也不會從膠帶T出來。再者，作為反應氣體，可使用例如六氟化硫（SF6 ）、四氟甲烷（CF4 ）、三氟化氮（NF3 ）等含氟之氟系穩定氣體。
在反應氣體以包覆晶圓W的方式被供給之狀態下，因靜電卡盤4與上部電極單元5之間施加高頻電壓，使反應氣體電漿化（自由基化）。而且，由於電漿化反應氣體，晶圓W的被研削面因自由基連鎖反應而被進行乾式蝕刻（等向性蝕刻），從晶圓W的被研削面除去研削痕並提升抗折強度。再者，亦可使上部電極單元5的下表面形成複數的導入口（無圖示），從上部電極單元5供給反應氣體。
如上述般，藉由去除膠帶T內水分，可防止膠帶灼燒。再者，蝕刻步驟中較佳為對下一個預訂蝕刻的晶圓W實施乾燥步驟。此，可有效活用蝕刻步驟所需的時間。
如上述般，根據本實施方式，即使因研削加工使膠帶T吸收研削水，亦可由乾燥步驟將膠帶T積極加熱，藉此預先去除膠帶T內水分。因此，在蝕刻步驟時即使減壓室進行減壓水分也不會出來，可防止膠帶T與靜電卡盤4的保持面41之間產生氣泡。因此，可防止因電漿蝕刻發生的膠帶灼燒。
再者，上述實施方式中，蝕刻裝置雖以電漿蝕刻裝置為例說明，但並非限定於此構成。本發明的電漿蝕刻方法，可適用於任何適合裝置。
另外，在上述實施方式中的各種步驟，僅示範一例，各步驟中裝置的動作或操作者的動作順序可適當變更。另外，各步驟亦可以全自動實施，舉例而言，乾燥步驟也可由操作者手動實施。
另外，在上述實施方式中，雖設為加熱台3的溫度調整為60度之構成，但並非限定於此構成。加熱台3的溫度，視膠帶T的材質或大小（晶圓W的）等可適當變更。舉例而言，膠帶T的材質為吸水性高的材質，在相對較大尺寸的情況下，較佳為調高加熱台3的設定溫度。
另外，在上述的實施方式中，在乾燥步驟中將加熱台的加熱膠帶T的加熱時間設定為例如1分鐘，但並非限定於此，可適當變更。如上述般，視膠帶T的材質或大小（晶圓W的）等可適當變更。舉例而言，膠帶T的材質為吸水性高的材質，在相對較大尺寸的情況下，較佳為延長膠帶T的加熱時間。
另外，雖已說明本實施方式及變形例，但上述的實施方式及變形例之全部或局部的組合，亦可視為本發明的其他實施方式。
另外，本發明的實施方式不限於上述實施方式，在不脫離本發明的技術思想主題的範圍內，也可進行各種變更、替換、變形。進而，伴隨技術的進步及衍伸的其他技術，本發明的技術思想若能以其他方法實現的話，則亦可用其他方法實施。因此，專利申請範圍為涵蓋了本發明的技術思想範圍內所包含的全部實施方法。 [產業上的可利用性]
如以上說明般，本發明具有防止膠帶灼燒之效果，特別是對電漿蝕刻方法有效。
T‧‧‧膠帶W‧‧‧晶圓B‧‧‧氣泡C‧‧‧減壓室4‧‧‧靜電卡盤44‧‧‧電極
圖1為以習知方法保持晶圓的情況之局部放大剖面圖。 圖2為表示本實施方式的乾燥步驟的一例之示意剖面圖。 圖3為表示本實施方式的靜電力保持步驟及蝕刻步驟的一例之示意剖面圖。
2‧‧‧搬送手段
3‧‧‧加熱台面
20‧‧‧保持面
21‧‧‧移動機構
30‧‧‧加熱器
31‧‧‧直流電源
32‧‧‧溫度感測器
W‧‧‧晶圓
T‧‧‧膠帶

Claims (1)

  1. 一種電漿蝕刻方法，在其中一表面黏貼膠帶之晶圓的另一表面供給研削水同時以研削磨石研削後，將晶圓的被研削面以電漿蝕刻裝置進行電漿蝕刻， 該電漿蝕刻裝置包含： 靜電卡盤，對配設在內部的電極供給直流電，以靜電力透過該膠帶保持晶圓；以及 減壓室，容納保持晶圓的該靜電卡盤並進行減壓，將所供給的反應氣體電漿化且對晶圓進行電漿蝕刻， 該電漿蝕刻方法包括： 乾燥步驟，對該膠帶賦與熱並去除膠帶內的水分； 靜電力保持步驟，在該乾燥步驟後，對該靜電卡盤的該電極供給直流電並產生靜電，對晶圓進行靜電力保持；以及 蝕刻步驟，在該靜電力保持步驟後，將該減壓室減壓，利用電漿化之反應氣體對該靜電卡盤所保持的晶圓的被研削面進行電漿蝕刻。
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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020197877A1 (en) * 2001-06-25 2002-12-26 Matsushita Electric Industrial Co. Ltd. Plasma treating apparatus, plasma treating method and method of manufacturing semiconductor device
US20120070658A1 (en) * 2010-09-16 2012-03-22 Nitto Denko Corporation Pressure-sensitive adhesive tape

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005191511A (ja) * 2003-12-02 2005-07-14 Dainippon Screen Mfg Co Ltd 基板処理装置および基板処理方法
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JP2010239030A (ja) * 2009-03-31 2010-10-21 Lintec Corp 半導体ウエハの加工方法
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JP6221710B2 (ja) * 2013-12-10 2017-11-01 住友電気工業株式会社 半導体装置の製造方法
WO2015152010A1 (ja) * 2014-03-31 2015-10-08 三井化学東セロ株式会社 保護フィルム、及び、該保護フィルムを用いる半導体装置の製造方法
JP2016004830A (ja) * 2014-06-13 2016-01-12 株式会社ディスコ 半導体チップの製造方法
JP6293017B2 (ja) * 2014-08-15 2018-03-14 株式会社ディスコ ウエーハの加工方法
JP2016092347A (ja) * 2014-11-11 2016-05-23 株式会社ディスコ エッチング方法
JP2016143785A (ja) 2015-02-03 2016-08-08 株式会社ディスコ 減圧処理装置
JP2016195151A (ja) * 2015-03-31 2016-11-17 パナソニックＩｐマネジメント株式会社 プラズマ処理装置およびプラズマ処理方法
JP6545518B2 (ja) * 2015-04-27 2019-07-17 株式会社ディスコ ウエーハの乾燥方法及び加工装置
JP6509636B2 (ja) * 2015-06-02 2019-05-08 株式会社ディスコ ゲッタリング層形成方法
JP6534871B2 (ja) * 2015-06-24 2019-06-26 株式会社ディスコ 板状ワークの貼り合わせ方法
JP2018085408A (ja) * 2016-11-22 2018-05-31 株式会社ディスコ 減圧処理装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020197877A1 (en) * 2001-06-25 2002-12-26 Matsushita Electric Industrial Co. Ltd. Plasma treating apparatus, plasma treating method and method of manufacturing semiconductor device
US20120070658A1 (en) * 2010-09-16 2012-03-22 Nitto Denko Corporation Pressure-sensitive adhesive tape

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