CN105590837A - 蚀刻方法 - Google Patents
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- 239000011737 fluorine Substances 0.000 claims abstract description 35
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Abstract
提供一种蚀刻方法。使附着于被加工物的水分在短时间内干燥并且防止氟酸的生成。作为被加工物的蚀刻方法,包含如下的工序:使腔室(11)内的压力成为负压状态、将惰性气体等离子化而去除附着于被加工物的水分的工序;以及在去除了水分之后、取代惰性气体而使用氟系稳定气体、将氟系稳定气体等离子化而对被加工物进行干法蚀刻的工序。
Description
技术领域
本发明涉及蚀刻方法,使氟系稳定气体等离子化而对半导体晶片等被加工物进行蚀刻。
背景技术
当利用磨削装置对半导体晶片等被加工物进行磨削时,会在被加工物的被磨削面上残存磨削损伤,这成为使被加工物的抗弯强度降低的原因。因此,提供一种在磨削装置中组装了蚀刻装置的磨削系统(例如,参照专利文献1)。该磨削系统自动地实施从被加工物的磨削直到蚀刻的一系列的动作,将磨削后的被加工物搬入蚀刻装置,对磨削后残留的磨削损伤通过等离子蚀刻进行镜面加工,从而从被加工物将磨削损伤去除。
专利文献1:日本特开2000-353676号公报
但是,在被加工物的蚀刻中,虽然SF6、CF4、NF3等氟系稳定气体被用作等离子气体,但当这些氟系稳定气体与附着在被加工物的表面上的水分发生反应时会生成氟酸(HF)。由于氟酸对人体具有危害性并且会使装置腐蚀,因此必须进行排气处理。为了防止氟酸的生成,在进行被加工物的清洗之后以充分干燥的状态将其搬入蚀刻装置,但凭借由干燥空气实现的旋转干燥则干燥时间变长,并且存在因直到蚀刻装置为止的输送过程中的湿气等而使水分附着于被加工物的可能性。
发明内容
本发明是鉴于这一点而完成的,其目的在于提供一种蚀刻方法,能够在短时间内使附着于被加工物的水分干燥,并且防止氟酸的生成。
根据本发明提供一种蚀刻方法,对被加工物进行蚀刻,其包含如下的工序:水分去除工序,在使收纳被加工物的腔室内的压力成为负压的状态下供给惰性气体,在第1加工条件下使该惰性气体等离子化而将附着于被加工物的水分去除;以及蚀刻工序,在该水分去除工序之后,将该惰性气体切换成氟系稳定气体并维持该腔室内的负压状态,在第2加工条件下使该氟系稳定气体等离子化而对被加工物进行干法蚀刻。
根据该结构,即使将附着有水分的被加工物搬入到腔室内,也能够通过等离子化后的惰性气体将被加工物的水分汽化而在短时间内干燥被加工物。在被加工干燥后,由于通过等离子化后的氟系稳定气体对被加工物进行干法蚀刻,因此不会在干法蚀刻时生成氟酸。由此,在干法蚀刻前水分不会附着于被加工物,能够有效地防止氟酸的生成而去除氟酸的排气的处理。并且,由于在腔室内进行干燥,因此能够省略被加工物向腔室内搬入前的干燥处理。
根据本发明,在由氟系稳定气体所进行的干法蚀刻前通过惰性气体使附着于被加工物的水分干燥,从而能够缩短干燥时间,并且能够防止氟酸的生成。
附图说明
图1是适于实施本发明的蚀刻方法的蚀刻装置的整体示意图。
图2是本发明实施方式的蚀刻方法的说明图。
标号说明
1:蚀刻装置;11:腔室;31:下部电极单元;41:上部电极单元;46:氟系稳定气体源;47:惰性气体源;48:切换阀;51:高频电源;54:减压部;W:被加工物。
具体实施方式
以下,参照附图对本实施方式的蚀刻方法进行说明。图1是适于实施本发明的蚀刻方法的蚀刻装置的整体示意图。另外,在本实施方式中,对将本发明应用于电容耦合型等离子体(CCP:CapacitiveCoupledPlasma)的等离子蚀刻装置的例子进行说明,但本发明也可以应用于感应耦合型等离子体(ICP:InductiveCoupledPlasma)的等离子蚀刻装置或其他各种等离子蚀刻装置。
如图1所示,蚀刻装置1构成为使腔室11内的蚀刻气体等离子化而利用干法蚀刻将残存于磨削后的被加工物W的磨削损伤去除。被加工物W是形成为大致圆板状的硅(Si)、砷化镓(GaAs)等的半导体晶片,在通过磨削加工对其背面61侧进行了磨削后被搬入蚀刻装置1。另外,在本实施方式中,作为被加工物W例示出半导体晶片,但被加工物W不限于半导体晶片,只要是干法蚀刻的对象可以是任意的。
此外,作为蚀刻气体使用六氟化硫(SF6)、四氟化碳(CF4)、三氟化氮(NF3)等含氟的氟系稳定气体。在该情况下,当水分附着于被加工物W时,水与氟发生反应生成氟酸(HF)而成为使装置腐蚀的原因。因此,优选将被加工物W以完全干燥的状态搬入到蚀刻装置1。通常,磨削后的被加工物W以在清洗后进行了旋转干燥的状态被输送到蚀刻装置1,但在输送过程中必须一边喷射干燥空气一边进行输送以确保不会附着水分。
因此,在本实施方式的蚀刻装置1中,当在腔室11内实施干法蚀刻之前,使难以与水发生反应的惰性气体等离子化,在短时间内使被加工物W干燥。由此,能够在附着有水分的状态下将被加工物W搬入到蚀刻装置1,此外能够以比旋转干燥更短的时间使其干燥。并且,由于在腔室11内被加工物W的干燥与干法蚀刻连续地实施,因此在干燥后水分不会附着于被加工物W,能够在干法蚀刻时有效地防止氟酸的产生。
在蚀刻装置1的腔室11的侧壁12形成有用于被加工物W的搬入和搬出的搬入搬出口13。在侧壁12的外壁面上以开闭搬入搬出口13的方式安装有闸门机构21。闸门机构21中,在气缸22的上端连结有闸门23,通过气缸22使闸门23沿着外壁面升降从而将搬入搬出口13开闭。当通过闸门23关闭搬入搬出口13时,在腔室11内形成密闭空间。并且,形成电场的下部电极单元31与上部电极单元41以在上下方向上对置的方式配设在腔室11内。
下部电极单元31设置在导电性的支柱部32的上端,该支柱部32贯通腔室11的底壁14。下部电极单元31是在导电性的保持工作台33的上表面上安装由多孔材料形成的圆板状的保持板34而构成的。保持板34通过保持工作台33和支柱部32内的吸引路径35与吸引源36连接,借助产生于保持板34的负压来吸引保持被加工物W。并且,在下部电极单元31内形成有供从冷却部37送出的制冷剂通过的冷却路径38。在蚀刻时将产生于保持工作台33的热量传递给制冷剂而抑制异常的温度上升。
上部电极单元41设置在导电性的支柱部42的下端,该支柱部42贯通腔室11的上壁15。上部电极单元41是在将蚀刻气体导入到腔室11内的导电性的喷出工作台43的下表面上安装由多孔材料形成的圆板状的扩散板材44而构成的。扩散板材44通过喷出工作台43和支柱部42内的流路45与氟系稳定气体源46和惰性气体源47连接。在朝向氟系稳定气体源46和惰性气体源47的管路的途中设置有切换阀48,构成为能够通过切换阀48对气体的供给源进行切换。
从氟系稳定气体源46对腔室11内供给上述的氟系稳定气体,从惰性气体源47供给氩气(Ar)、氦气(He)、氮气(N2)、氪气(Kr)、或者氙气(Xe)作为惰性气体。并且,支柱部42的上端侧从腔室11向上方突出,并与设置于腔室11的上壁15的滚珠丝杠式的升降驱动机构49连结。通过对该升降驱动机构49进行驱动,而使上部电极单元41相对于下部电极单元31离开或者接近,相对于保持工作台33上的被加工物W将喷出工作台43的高度调整到适当的位置。
下部电极单元31与高频电源51连接,并将上部电极单元41接地。通过在下部电极单元31和上部电极单元41之间施加高频电压,而将氟系稳定气体和惰性气体等离子化。此外,在腔室11中,在保持工作台33的下方形成有排出口53,减压部54经由软管与排出口53连接。减压部54是所谓的涡轮分子泵(TMP),通过减压部54吸引腔室11内的空气或等离子气体,而使腔室11内减压到负压状态。
在以这种方式构成的蚀刻装置1中,在使腔室11内为负压的状态下,从上部电极单元41朝向被加工物W喷射惰性气体。在该状态下,通过在上部电极单元41和下部电极单元31之间施加高频电压而将惰性气体等离子化。通过等离子化后的惰性气体使附着于被加工物W的水分汽化而使被加工物W干燥。接着,取代惰性气体朝向干燥后的被加工物W喷射氟系稳定气体,与惰性气体同样地将氟系稳定气体等离子化而对被加工物W进行蚀刻。
以下,参照图2的(A)和(B)对蚀刻装置1的蚀刻方法进行说明。其中,图2的(A)示出水分去除工序,图2的(B)示出蚀刻工序。并且,本实施方式的蚀刻方法仅是一例,可以适当变更。
如图2的(A)所示,在水分去除工序中,在对磨削后的被加工物W进行清洗后将其输送到腔室11,在附着有水分的状态下从搬入搬出口13搬入到腔室11内。使背面61侧朝向上方而将被加工物W保持在保持工作台33上,通过附着于背面61的水分而形成液相L。在水分去除工序中,通过切换阀48将气体的供给源调节为惰性气体源47,断开来自氟系稳定气体源46的气体的供给。当关闭闸门23而在腔室11内形成密闭空间时,上部电极单元41接近下部电极单元31而调整电极间距离。
并且,进行真空排气直到腔室11内的压力成为负压状态,维持负压状态不变地从上部电极单元41朝向被加工物W喷射氩气气体(Ar)作为惰性气体。此时,由于经由扩散板材44喷射惰性气体,因此对被加工物W的背面61均匀地喷射惰性气体。在喷射了惰性气体的状态下,在上部电极单元41与下部电极单元31之间施加高频电压而将惰性气体等离子化(离子化)。通过等离子化后的惰性气体将附着于被加工物W的水分汽化而使被加工物W干燥。
由于等离子化后的惰性气体不会与附着于被加工物W的水分发生反应,而是朝向水分电子冲突而使其分解成氢和氧而使其汽化,因此在腔室11内不会残留水蒸气或湿气。由此,与基于干燥空气的旋转干燥相比,能够在短时间内良好地使被加工物W干燥。
另外,在水分去除工序中,例如,在以下的第1加工条件下实施被加工物W的干燥。第1加工条件不限于下述的内容,能够根据装置性能、蚀刻对象、气体种类等进行适当变更。
<第1加工条件>
气体种类:Ar
高频频率:2.0~13.56MHz
高频电力:500~3000W
腔室内压力:5pa~500Pa
干燥时间:5~30s
如图2的(B)所示,在水分去除工序后实施蚀刻工序。在蚀刻工序中,通过切换阀48将气体的供给源从惰性气体源47切换为氟系稳定气体源46,释放来自氟系稳定气体源46的气体的供给,断开来自惰性气体源47的气体的供给。并且,在将腔室11内的压力维持在负压状态下从上部电极单元41朝向被加工物W喷射六氟化硫(SF6)作为氟系稳定气体。此时,由于经由扩散板材44喷射氟系稳定气体,因此对干燥后的被加工物W的背面61均匀地喷射氟系稳定气体。
在喷射了氟系稳定气体的状态下,在上部电极单元41与下部电极单元31之间施加高频电压而将氟系稳定气体等离子化(自由基化)。通过等离子化后的氟系稳定气体借助自由基连锁反应对被加工物W的背面61进行干法蚀刻(各向同性蚀刻),从被加工物W去除磨削损伤而提高抗弯强度。此时,由于被加工物W完全干燥,因此不存在氟系稳定气体与水分发生反应的情况,在蚀刻工序中不会生成氟酸(HF)。由此,不需要在腔室11中设置氟酸的排气处理的设备。
另外,在蚀刻工序中,例如在以下的第2加工条件下实施被加工物W的蚀刻。第2加工条件不限于下述的内容,能够根据装置性能、蚀刻对象、气体种类等进行适当变更。
<第2加工条件>
气体种类:SF6
高频频率:13.56MHz
高频电力:1000~5000W
腔室内压力:50~300Pa
处理时间:30~180s
当被加工物W的干法蚀刻结束时,停止上部电极单元41与下部电极单元31之间的高频电压的施加,关闭切换阀48而断开来自氟系稳定气体源46的气体供给。并且,打开闸门23而将腔室11内向外部开放,从搬入搬出口13将腔室11内的被加工物W搬出。这样,在本实施方式的蚀刻装置1中,由于在腔室11内连续地实施被加工物W的水分去除工序和蚀刻工序,因此能够在使水分附着于被加工物W的状态下直接搬入到腔室11内。
另外,在本实施方式中,既可以从排出口53排出惰性气体和氟系稳定气体,也可以使所排出的气体返回到惰性气体源47和氟系稳定气体源46而进行再利用。通过使惰性气体和氟系稳定气体进行循环而能够有效地利用未等离子化的气体。并且,在本实施方式中,也可以使上部电极单元41与下部电极单元31的电极间距离在水分去除工序和蚀刻工序中可变。
如上所述,在本实施方式的蚀刻方法中,即使将附着有水分的被加工物W搬入到腔室11内,也能够通过等离子化后的惰性气体将被加工物W的水分汽化而在短时间内干燥被加工物。由于在被加工物干燥后通过等离子化后的氟系稳定气体对被加工物W进行干法蚀刻,因此不会在干法蚀刻时生成氟酸。由此,在干法蚀刻之前不会在被加工物W上附着水分,能够有效地防止氟酸的生成而省去氟酸的排气的处理。并且,由于在腔室11内进行干燥,因此能够省略被加工物向腔室11内搬入前的干燥处理。
另外,本发明不限于上述实施方式,能够进行各种变更而实施。在上述实施方式中,关于在附图中图示的大小或形状等不限于此,能够在发挥本发明的效果的范围内进行适当变更。除此之外,能够在不脱离本发明目的的范围内进行适当变更而实施。
例如,在上述的实施方式中,关于对磨削后的被加工物W进行蚀刻的方法进行了说明,但不限于该结构。例如,也可以对利用切削刀具等分割后的被加工物W进行蚀刻。在这种情况下,也可以在将惰性气体等离子化而将切削水汽化去除后,将氟系稳定气体等离子化而利用干法蚀刻去除切削损伤。
并且,在上述的实施方式中,采用利用水分去除工序使附着于被加工物W的水分分解成氢和氧的结构,但不限于该结构。在水分去除工序中,只要能够去除附着于被加工物W的水分,可以以任何方式使其汽化。
【产业上的可利用性】
像以上说明的那样,本发明具有如下的效果:能够使附着于被加工物的水分在短时间内干燥并且防止氟酸的生成,特别针对使氟系稳定气体等离子化而对半导体晶片等被加工物进行蚀刻的蚀刻方法有用。
Claims (1)
1.一种蚀刻方法,对被加工物进行蚀刻,该蚀刻方法包含如下的工序:
水分去除工序,在使收纳被加工物的腔室内的压力成为负压的状态下供给惰性气体,在第1加工条件下使该惰性气体等离子化而将附着于被加工物的水分去除;以及
蚀刻工序,在该水分去除工序之后,将该惰性气体切换成氟系稳定气体并维持该腔室内的负压状态,在第2加工条件下使该氟系稳定气体等离子化而对被加工物进行干法蚀刻。
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