JP2017112237A - 減圧処理装置 - Google Patents
減圧処理装置 Download PDFInfo
- Publication number
- JP2017112237A JP2017112237A JP2015245770A JP2015245770A JP2017112237A JP 2017112237 A JP2017112237 A JP 2017112237A JP 2015245770 A JP2015245770 A JP 2015245770A JP 2015245770 A JP2015245770 A JP 2015245770A JP 2017112237 A JP2017112237 A JP 2017112237A
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- chamber
- wafer
- dry air
- decompression
- opening
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- 230000006837 decompression Effects 0.000 title claims abstract description 62
- 238000012545 processing Methods 0.000 title claims abstract description 24
- 238000005530 etching Methods 0.000 description 34
- 238000001020 plasma etching Methods 0.000 description 17
- 239000012495 reaction gas Substances 0.000 description 11
- 239000007789 gas Substances 0.000 description 10
- 238000000034 method Methods 0.000 description 6
- 239000000498 cooling water Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000002826 coolant Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 239000003507 refrigerant Substances 0.000 description 2
- 238000004904 shortening Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910018503 SF6 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000012510 hollow fiber Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 1
- 229960000909 sulfur hexafluoride Drugs 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- Plasma Technology (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
Abstract
【解決手段】減圧状態でウエーハ(W)を処理する減圧処理装置(1)が、室内を減圧する減圧手段(50)を有するチャンバ(10)と、チャンバ内へのウエーハの搬入及び搬出用の搬入出口(12)を開閉する開閉扉(17)と、チャンバ内にドライエアを供給するドライエア供給源(37)とを備え、開閉扉が開かれた状態ではドライエアを供給し続けてチャンバ内を乾燥状態に維持する構成にした。
【選択図】図1
Description
10 チャンバ(減圧室)
12 搬入出口
17 開閉扉
20 下部電極ユニット
22 保持テーブル
30 上部電極ユニット
36 反応ガス供給源
37 ドライエア供給源(ドライエア供給手段)
50 減圧手段
60 制御手段
W ウエーハ
Claims (1)
- 減圧状態でウエーハを処理する減圧処理装置であって、
ウエーハを保持する保持テーブルを配設する室内を減圧する減圧手段を有する減圧室と、該減圧室にウエーハを搬入および搬出する搬入出口を開閉する開閉扉と、該減圧室にドライエアを供給するドライエア供給手段と、を備え、
該ドライエア供給手段により該減圧室内にドライエアを供給し該減圧室を陽圧にして該開閉扉を開き、該開閉扉が閉じられるまで該ドライエア供給手段により該減圧室内にドライエアを供給し続け該減圧室内を乾燥状態で維持させる減圧処理装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015245770A JP2017112237A (ja) | 2015-12-17 | 2015-12-17 | 減圧処理装置 |
Applications Claiming Priority (1)
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JP2015245770A JP2017112237A (ja) | 2015-12-17 | 2015-12-17 | 減圧処理装置 |
Publications (1)
Publication Number | Publication Date |
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JP2017112237A true JP2017112237A (ja) | 2017-06-22 |
Family
ID=59081080
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2015245770A Pending JP2017112237A (ja) | 2015-12-17 | 2015-12-17 | 減圧処理装置 |
Country Status (1)
Country | Link |
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JP (1) | JP2017112237A (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2019186361A (ja) * | 2018-04-09 | 2019-10-24 | 東京エレクトロン株式会社 | 結露防止方法および処理装置 |
CN110504189A (zh) * | 2018-05-16 | 2019-11-26 | 东京毅力科创株式会社 | 基片处理装置和基片处理方法 |
-
2015
- 2015-12-17 JP JP2015245770A patent/JP2017112237A/ja active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2019186361A (ja) * | 2018-04-09 | 2019-10-24 | 東京エレクトロン株式会社 | 結露防止方法および処理装置 |
TWI797301B (zh) * | 2018-04-09 | 2023-04-01 | 日商東京威力科創股份有限公司 | 結露防止方法及處理裝置 |
CN110504189A (zh) * | 2018-05-16 | 2019-11-26 | 东京毅力科创株式会社 | 基片处理装置和基片处理方法 |
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