TWI751354B - 切割裝置及晶圓的加工方法 - Google Patents

切割裝置及晶圓的加工方法 Download PDF

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Publication number
TWI751354B
TWI751354B TW107123845A TW107123845A TWI751354B TW I751354 B TWI751354 B TW I751354B TW 107123845 A TW107123845 A TW 107123845A TW 107123845 A TW107123845 A TW 107123845A TW I751354 B TWI751354 B TW I751354B
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TW
Taiwan
Prior art keywords
wafer
height
drop
laser beam
outer peripheral
Prior art date
Application number
TW107123845A
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English (en)
Chinese (zh)
Other versions
TW201911403A (zh
Inventor
小松淳
湊浩吉
Original Assignee
日商迪思科股份有限公司
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Application filed by 日商迪思科股份有限公司 filed Critical 日商迪思科股份有限公司
Publication of TW201911403A publication Critical patent/TW201911403A/zh
Application granted granted Critical
Publication of TWI751354B publication Critical patent/TWI751354B/zh

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
    • B28D5/0076—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for removing dust, e.g. by spraying liquids; for lubricating, cooling or cleaning tool or work
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
    • B28D5/0082—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
TW107123845A 2017-08-09 2018-07-10 切割裝置及晶圓的加工方法 TWI751354B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017-153874 2017-08-09
JP2017153874A JP6953075B2 (ja) 2017-08-09 2017-08-09 切削装置及びウェーハの加工方法

Publications (2)

Publication Number Publication Date
TW201911403A TW201911403A (zh) 2019-03-16
TWI751354B true TWI751354B (zh) 2022-01-01

Family

ID=65275419

Family Applications (1)

Application Number Title Priority Date Filing Date
TW107123845A TWI751354B (zh) 2017-08-09 2018-07-10 切割裝置及晶圓的加工方法

Country Status (6)

Country Link
US (1) US10622215B2 (ja)
JP (1) JP6953075B2 (ja)
KR (1) KR102546465B1 (ja)
CN (1) CN109382920B (ja)
SG (1) SG10201806236TA (ja)
TW (1) TWI751354B (ja)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7283951B2 (ja) * 2019-04-05 2023-05-30 株式会社ディスコ 加工装置
JP7216613B2 (ja) * 2019-05-16 2023-02-01 株式会社ディスコ 加工装置
JP2020203366A (ja) * 2019-06-19 2020-12-24 株式会社ディスコ 加工装置
JP7262901B2 (ja) * 2019-06-24 2023-04-24 株式会社ディスコ 被加工物の切削方法
JP7430455B2 (ja) 2020-06-05 2024-02-13 株式会社ディスコ エッジ位置検出装置及びエッジ位置検出方法

Citations (4)

* Cited by examiner, † Cited by third party
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TW201225164A (en) * 2010-12-07 2012-06-16 Alpha & Omega Semiconductor Cayman Ltd Method of avoiding resin outflow from the wafer scribe line in WLCSP
JP2014056889A (ja) * 2012-09-11 2014-03-27 Disco Abrasive Syst Ltd ウエーハの加工方法
JP2014139964A (ja) * 2013-01-21 2014-07-31 Disco Abrasive Syst Ltd ウェーハの加工方法
JP2015023239A (ja) * 2013-07-23 2015-02-02 株式会社ディスコ 加工装置

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JP4409744B2 (ja) * 2000-10-20 2010-02-03 ライトロン株式会社 エッチング工程の進行状況表示方法およびエッチング工程モニタ装置
US6831742B1 (en) * 2000-10-23 2004-12-14 Applied Materials, Inc Monitoring substrate processing using reflected radiation
JP2005038978A (ja) * 2003-07-18 2005-02-10 Speedfam Co Ltd 半導体ウェハの平坦面外周部研磨装置
JP2006108532A (ja) * 2004-10-08 2006-04-20 Disco Abrasive Syst Ltd ウエーハの研削方法
JP5309565B2 (ja) * 2005-08-05 2013-10-09 株式会社ニコン ステージ装置、露光装置、方法、露光方法、及びデバイス製造方法
JP5757831B2 (ja) * 2011-09-14 2015-08-05 株式会社ディスコ 切削ブレード先端形状検出方法
JP5829881B2 (ja) * 2011-10-07 2015-12-09 株式会社ディスコ 切削装置
JP2013149822A (ja) * 2012-01-20 2013-08-01 Disco Abrasive Syst Ltd エッジトリミング方法
WO2013162842A1 (en) * 2012-04-25 2013-10-31 Applied Materials, Inc. Wafer edge measurement and control
JP6105872B2 (ja) 2012-08-06 2017-03-29 株式会社ディスコ ウエーハの加工方法
US20140054748A1 (en) * 2012-08-21 2014-02-27 Genmao Liu Edge trimming method for semiconductor wafer and semiconductor wafer having trimmed edge
JP2015085398A (ja) * 2013-10-28 2015-05-07 株式会社ディスコ 切削装置
JP2016078147A (ja) * 2014-10-14 2016-05-16 株式会社ディスコ 研削装置
CN204271041U (zh) * 2014-10-20 2015-04-15 上海技美电子科技有限公司 晶圆检测装置
JP2016100356A (ja) * 2014-11-18 2016-05-30 株式会社ディスコ 切削装置
CN104567685A (zh) * 2015-01-23 2015-04-29 北京中拓机械集团有限责任公司 半导体晶片的检测装置
CN106158694A (zh) * 2015-04-10 2016-11-23 北京北方微电子基地设备工艺研究中心有限责任公司 检测装置及半导体加工设备
JP6880364B2 (ja) * 2015-08-18 2021-06-02 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201225164A (en) * 2010-12-07 2012-06-16 Alpha & Omega Semiconductor Cayman Ltd Method of avoiding resin outflow from the wafer scribe line in WLCSP
JP2014056889A (ja) * 2012-09-11 2014-03-27 Disco Abrasive Syst Ltd ウエーハの加工方法
JP2014139964A (ja) * 2013-01-21 2014-07-31 Disco Abrasive Syst Ltd ウェーハの加工方法
JP2015023239A (ja) * 2013-07-23 2015-02-02 株式会社ディスコ 加工装置

Also Published As

Publication number Publication date
KR20190016914A (ko) 2019-02-19
CN109382920A (zh) 2019-02-26
CN109382920B (zh) 2022-02-18
TW201911403A (zh) 2019-03-16
US10622215B2 (en) 2020-04-14
JP6953075B2 (ja) 2021-10-27
SG10201806236TA (en) 2019-03-28
JP2019033189A (ja) 2019-02-28
US20190051532A1 (en) 2019-02-14
KR102546465B1 (ko) 2023-06-21

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