JP2014139964A - ウェーハの加工方法 - Google Patents
ウェーハの加工方法 Download PDFInfo
- Publication number
- JP2014139964A JP2014139964A JP2013008068A JP2013008068A JP2014139964A JP 2014139964 A JP2014139964 A JP 2014139964A JP 2013008068 A JP2013008068 A JP 2013008068A JP 2013008068 A JP2013008068 A JP 2013008068A JP 2014139964 A JP2014139964 A JP 2014139964A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- outer peripheral
- chuck table
- height
- chamfered portion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000012545 processing Methods 0.000 title abstract description 41
- 238000000034 method Methods 0.000 title abstract description 33
- 230000002093 peripheral effect Effects 0.000 claims abstract description 79
- 238000005520 cutting process Methods 0.000 claims abstract description 33
- 238000005259 measurement Methods 0.000 claims abstract description 19
- 238000003672 processing method Methods 0.000 claims description 10
- 230000008569 process Effects 0.000 abstract description 28
- 230000007547 defect Effects 0.000 abstract description 5
- 239000002245 particle Substances 0.000 abstract 1
- 238000004140 cleaning Methods 0.000 description 38
- 230000007246 mechanism Effects 0.000 description 27
- 238000001514 detection method Methods 0.000 description 14
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 12
- 238000012546 transfer Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 4
- 238000009966 trimming Methods 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 239000000428 dust Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02021—Edge treatment, chamfering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
Abstract
【解決手段】加工装置は、チャックテーブル(5)の回転中心にウェーハ(W)の中心を位置付けてウェーハ(W)を保持し、測定手段(6)をウェーハ(W)の外周面取り部(91)近傍に位置付けて、チャックテーブル(5)を回転させながらウェーハ(W)の外周面取り部(91)全周にわたって高さを測定し、ウェーハ(W)の高さバラツキが所定値を超えた場合にエラーを報知し、ウェーハ(W)のバラツキが所定値以下の場合に切削ブレードによりウェーハ(W)の外周面取り部(91)を除去する構成にした。
【選択図】図4
Description
5 チャックテーブル
6 測定手段
8 切削手段
51 制御手段
52 判定手段
53 報知手段
91 外周面取り部
W ウェーハ
Claims (1)
- 外周面取り部を有するウェーハの該外周面取り部を除去するウェーハの加工方法であって、
回転可能なチャックテーブルの回転中心にウェーハの中心を位置付けて該チャックテーブル上面にウェーハを保持するウェーハ保持工程と、
該ウェーハ保持工程の後に、高さを測定する測定手段をウェーハの外周面取り部近傍に位置付けて、チャックテーブルを回転させながらウェーハの外周面取り部全周にわたって高さを測定する外周高さ測定工程と、
該外周高さ測定工程において高さバラツキが所定値を超えた場合に、エラーを報知する報知工程と、
該外周高さ測定工程において全周にわたって高さバラツキが所定値以下の場合に、切削ブレードによりウェーハの外周面取り部を除去する除去工程と、
から構成されたウェーハの加工方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013008068A JP6196776B2 (ja) | 2013-01-21 | 2013-01-21 | ウェーハの加工方法 |
TW102143836A TWI602229B (zh) | 2013-01-21 | 2013-11-29 | Wafer processing methods |
CN201410014268.0A CN103943488B (zh) | 2013-01-21 | 2014-01-13 | 晶片的加工方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013008068A JP6196776B2 (ja) | 2013-01-21 | 2013-01-21 | ウェーハの加工方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014139964A true JP2014139964A (ja) | 2014-07-31 |
JP6196776B2 JP6196776B2 (ja) | 2017-09-13 |
Family
ID=51191099
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013008068A Active JP6196776B2 (ja) | 2013-01-21 | 2013-01-21 | ウェーハの加工方法 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP6196776B2 (ja) |
CN (1) | CN103943488B (ja) |
TW (1) | TWI602229B (ja) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20160138899A (ko) * | 2015-05-26 | 2016-12-06 | 가부시기가이샤 디스코 | 가공 시스템 |
JP2017191911A (ja) * | 2016-04-15 | 2017-10-19 | 株式会社ディスコ | 加工装置 |
JP2018114580A (ja) * | 2017-01-17 | 2018-07-26 | 株式会社ディスコ | ウエーハの加工方法及び切削装置 |
KR20190016914A (ko) * | 2017-08-09 | 2019-02-19 | 가부시기가이샤 디스코 | 절삭 장치 및 웨이퍼의 가공 방법 |
JP2020040181A (ja) * | 2018-09-12 | 2020-03-19 | 株式会社ディスコ | エッジトリミング装置 |
US11101404B2 (en) | 2018-03-26 | 2021-08-24 | Nichia Corporation | Method for manufacturing semiconductor device and semiconductor device |
US11626301B2 (en) | 2019-09-24 | 2023-04-11 | Nichia Corporation | Method for manufacturing semiconductor element |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104570502A (zh) * | 2014-12-30 | 2015-04-29 | 深圳市华星光电技术有限公司 | 液晶面板之间隔物的制造方法及制造间隔物的设备 |
JP2020051839A (ja) | 2018-09-26 | 2020-04-02 | 株式会社ディスコ | ウェーハの外周縁上面高さ測定装置 |
CN114888983A (zh) * | 2022-05-31 | 2022-08-12 | 杭州中为光电技术有限公司 | 硅片自动倒角清洗一体化设备 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000202749A (ja) * | 1999-01-12 | 2000-07-25 | Sharp Corp | 基板面取装置 |
JP2003251559A (ja) * | 2002-02-28 | 2003-09-09 | Ebara Corp | 研磨装置及び研磨面の異物検出方法 |
JP2005197578A (ja) * | 2004-01-09 | 2005-07-21 | Disco Abrasive Syst Ltd | 板状物に形成された電極の加工装置,板状物に形成された電極の加工方法,及び板状物に形成された電極の加工装置のチャックテーブルの平面度測定方法 |
JP2008212921A (ja) * | 2007-02-08 | 2008-09-18 | Toray Ind Inc | 塗布方法、プラズマディスプレイ用部材の製造方法および塗布装置 |
JP2012238658A (ja) * | 2011-05-10 | 2012-12-06 | Disco Abrasive Syst Ltd | ウエーハの面取り部除去装置 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06196381A (ja) * | 1992-12-22 | 1994-07-15 | Canon Inc | 基板保持装置 |
-
2013
- 2013-01-21 JP JP2013008068A patent/JP6196776B2/ja active Active
- 2013-11-29 TW TW102143836A patent/TWI602229B/zh active
-
2014
- 2014-01-13 CN CN201410014268.0A patent/CN103943488B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000202749A (ja) * | 1999-01-12 | 2000-07-25 | Sharp Corp | 基板面取装置 |
JP2003251559A (ja) * | 2002-02-28 | 2003-09-09 | Ebara Corp | 研磨装置及び研磨面の異物検出方法 |
JP2005197578A (ja) * | 2004-01-09 | 2005-07-21 | Disco Abrasive Syst Ltd | 板状物に形成された電極の加工装置,板状物に形成された電極の加工方法,及び板状物に形成された電極の加工装置のチャックテーブルの平面度測定方法 |
JP2008212921A (ja) * | 2007-02-08 | 2008-09-18 | Toray Ind Inc | 塗布方法、プラズマディスプレイ用部材の製造方法および塗布装置 |
JP2012238658A (ja) * | 2011-05-10 | 2012-12-06 | Disco Abrasive Syst Ltd | ウエーハの面取り部除去装置 |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20160138899A (ko) * | 2015-05-26 | 2016-12-06 | 가부시기가이샤 디스코 | 가공 시스템 |
KR102446758B1 (ko) * | 2015-05-26 | 2022-09-22 | 가부시기가이샤 디스코 | 가공 시스템 |
JP2017191911A (ja) * | 2016-04-15 | 2017-10-19 | 株式会社ディスコ | 加工装置 |
JP2018114580A (ja) * | 2017-01-17 | 2018-07-26 | 株式会社ディスコ | ウエーハの加工方法及び切削装置 |
KR20190016914A (ko) * | 2017-08-09 | 2019-02-19 | 가부시기가이샤 디스코 | 절삭 장치 및 웨이퍼의 가공 방법 |
JP2019033189A (ja) * | 2017-08-09 | 2019-02-28 | 株式会社ディスコ | 切削装置及びウェーハの加工方法 |
TWI751354B (zh) * | 2017-08-09 | 2022-01-01 | 日商迪思科股份有限公司 | 切割裝置及晶圓的加工方法 |
KR102546465B1 (ko) * | 2017-08-09 | 2023-06-21 | 가부시기가이샤 디스코 | 절삭 장치 및 웨이퍼의 가공 방법 |
US11101404B2 (en) | 2018-03-26 | 2021-08-24 | Nichia Corporation | Method for manufacturing semiconductor device and semiconductor device |
JP2020040181A (ja) * | 2018-09-12 | 2020-03-19 | 株式会社ディスコ | エッジトリミング装置 |
JP7222636B2 (ja) | 2018-09-12 | 2023-02-15 | 株式会社ディスコ | エッジトリミング装置 |
US11626301B2 (en) | 2019-09-24 | 2023-04-11 | Nichia Corporation | Method for manufacturing semiconductor element |
Also Published As
Publication number | Publication date |
---|---|
TW201430931A (zh) | 2014-08-01 |
TWI602229B (zh) | 2017-10-11 |
CN103943488A (zh) | 2014-07-23 |
CN103943488B (zh) | 2018-04-20 |
JP6196776B2 (ja) | 2017-09-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6196776B2 (ja) | ウェーハの加工方法 | |
TWI667099B (zh) | Wafer inspection method and grinding and polishing device | |
TWI641036B (zh) | 晶圓之加工方法 | |
TWI641075B (zh) | 改善晶圓塗覆 | |
US9627260B2 (en) | Workpiece cutting method using dummy wafer to determine condition of cutting blade | |
TWI695424B (zh) | 磨削裝置 | |
JP6887260B2 (ja) | 加工装置 | |
TWI809228B (zh) | 切割裝置及使用切割裝置的晶圓加工方法 | |
TWI751354B (zh) | 切割裝置及晶圓的加工方法 | |
JP2011249571A (ja) | 切削ブレード外形形状検査方法 | |
JP2015023239A (ja) | 加工装置 | |
JP6061629B2 (ja) | 加工装置 | |
TWI606501B (zh) | Processing device | |
US20190378759A1 (en) | Method of processing wafer and grinding apparatus | |
JP6004761B2 (ja) | ダイシング方法 | |
JP7408306B2 (ja) | 切削装置 | |
JP2018192603A (ja) | 切削装置の切削ブレード検出機構 | |
JP5976433B2 (ja) | 切削装置 | |
JP6173813B2 (ja) | 立型加工機 | |
JP2012084671A (ja) | 検出方法 | |
JP6371579B2 (ja) | チャックテーブル | |
JP2010005717A (ja) | 加工装置 | |
JP2014075439A (ja) | 加工装置 | |
JP2015026649A (ja) | チャックテーブル | |
JP2014229772A (ja) | 加工装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20151118 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20161128 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20161206 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20170203 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20170801 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20170821 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6196776 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |