TWI745880B - 圖案化晶圓銲錫擴散阻障 - Google Patents

圖案化晶圓銲錫擴散阻障 Download PDF

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TWI745880B
TWI745880B TW109107703A TW109107703A TWI745880B TW I745880 B TWI745880 B TW I745880B TW 109107703 A TW109107703 A TW 109107703A TW 109107703 A TW109107703 A TW 109107703A TW I745880 B TWI745880 B TW I745880B
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metal layer
diffusion barrier
layer
substrate
hole
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TW109107703A
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TW202105610A (zh
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保羅 杜弗
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美商雷森公司
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Abstract

用於積體電路之方法和設備具有在基板之前側上的前側金屬層和在該基板之背側上的背側金屬層。背側金屬層係沉積到該基板之背側上以及到該通孔中，使得該背側金屬層之部分連接至該前側金屬層之部分。擴散阻障層係沉積到位於該通孔中的該背側金屬層上。

Description

圖案化晶圓銲錫擴散阻障
本發明係關於圖案化晶圓銲錫擴散阻障。
一些類型的積體電路(IC; integrated circuit)，例如使用砷化鎵(GaAs)或氮化鎵(GaN)製造的單晶微波積體電路(MMIC; Monolithic Microwave Integrated Circuit)晶片，可以Au(金)層來在後側上塗布。Au層透過蝕刻的一或多個通孔(via)延伸上至基板或IC的晶圓中來允許地接觸在晶圓之背側上作成。附接到晶片的地傳統上以金-錫(Au-Sn)共晶焊錫(eutectic solder)來作成。在當Au-Sn銲錫可有效的用於GaAs晶片的同時，以GaN達成的較高電力已造成晶片在較高溫度處運行，其可加速Au-Sn銲錫擴散通過通孔並且到晶圓之前方上。擴散可引起在晶圓之前側處空橋圖案上的變形，並且亦可引起在晶圓之薄背側Au層形成空隙(void)。
已提出各種解決方案且使用以降低銲錫材料與要被接合/連接的金屬層之間的互動。該些解決方案典型地包括施用於層中的阻障(barrier)來防止從一層擴散到另一層。例如，用於抑制擴散或將擴散抑制層分層到金屬接觸中的塗佈接觸區域已被提出做為擴散阻障。然而，將擴散阻障層施用到晶圓前方上可能是無效果的，因於使用碳化矽(SiC)或GaN蝕刻通孔可持續蝕刻通過在晶圓前側上首先的兩或三個金屬層。此外，在SiC/GaN裝置中通孔結構之不均勻拓撲引起以汽化的(evaporated)或濺鍍的(sputtered)阻礙層來覆蓋的挑戰。而且，若阻障層被施用在鍍金層之下，則阻障層可增加前側金屬層與背側地連接(亦即，背側金屬層)之間的串聯電阻。
依據此概念，於此說明的技術為用於形成擴散阻障的有效方法。於此說明的技術可提供在具有可能在升高的溫度被延長接觸對銲錫材料損害之薄金屬層的積體電路上進行的圖案化解決方案。
依據一說明性實施例，用於製造積體電路的方法可包括：提供具有前側和背側的基板；將前側金屬層沉積到該基板之前側上；在該基板中形成通孔；將背側金屬層沉積到基板之背側上且到通孔中使得該背側金屬層的部分連接至該前側金屬層的部分；以及將擴散阻障層沉積到位在該通孔中的該背側金屬層上，該擴散阻障實質上維持該通孔的形狀。
在一態樣中，該擴散阻障可包含鎳(Ni)層。在另一態樣中，該擴散阻障可包含氮化鉭(tantalum nitride)、氮化鎢(tungsten nitride)、氮化鈦(titanium nitride)及鉻(chromium)之其中至少一者。
在一態樣中，該擴散阻障可被氧化以形成銲錫潤濕/吃錫阻障。
在一態樣中，方法可更包含將銲錫層沉積在僅填充該通孔之部分的該擴散阻障上面。
在一態樣中，方法可更包含沉積在該前側金屬層與該背側金屬層之間的黏合材料之薄層。
在一態樣中，所述沉積該擴散阻障的步驟可包含在該背側金屬層之上圖案化該擴散阻障。
在一態樣中，該背側金屬層可包含鄰近對應該基板之背側的該通孔的一端的斷裂(break)，且進一步包括將擴散阻障沉積到該斷裂中。
在一態樣中，該前側金屬層可包含金。
在一態樣中，該背側金屬層可包含金。
依據另一說明性實施例，積體電路可包括：具有前側和背側的基板；沉積到該基板之前側上的前側金屬層；沉積到該基板之背側上的背側金屬層且沉積到在該基板中形成之通孔中；其中該背側金屬層的部分連接至該前側金屬層的部分；以及沉積到位在該通孔中的該背側金屬層上的擴散阻障，其中該擴散阻障實質上維持該通孔的形狀。
在一態樣中，該積體電路可更包含在該前側金屬層與該背側金屬層之間的黏合材料之薄層。
本揭露之一或多個實施例的細節係在下面附隨的圖式以及發明說明中概述。本揭露之其它特徵、客體及益處從發明說明及圖式以及從申請專利範圍將會是明白的。
於此所使用的相關描述，像是左、右、上及下，係參照圖、僅為相關性而非意味有限制性含義。此外，為了簡潔，如能由應用領域具有通常知識之該些者所理解的，共同零件及電路，諸如積體電路、電阻器、電容器、電晶體等等，未被包括在圖中。除非另以特定，當提供說明性的特定實施例之不同的細節的特徵時，闡述的實施例可被理解，因而除非另以特定，在不悖離所揭示的概念、系統或方法之下，說明之特徵、組件、模組、元件及/或態樣能另以被結合、互連、排序、分開、互換、定位及/或重新佈設。此外，組件之形狀和尺寸打算僅為說明性的且除非另以特定，能在不物質地影響或限制於此尋求保護的概念之範圍下被變更。
現請參照圖1，提供了繪示來自在先前技術積體電路中銲錫擴散的損害的例示性圖。對於以Au(金)層在背側上塗佈的積體電路(IC)，地附接至晶片係傳統上以金-錫(Au-Sn)共晶焊錫來作成。對於具有較高電源的一些類型的晶片，該晶片可在造成加速Au-Sn擴散的較高溫度上運行。擴散可發生於兩方向。首先，在銲錫材料(Au-Sn)中的錫(Sn)可擴散(內擴散(in-diffusion))至金層。在金層中的金(Au)亦朝向銲錫層擴散(外擴散(out-diffusion))。銲錫層可引起在晶圓之前側處空橋圖案(airbridge pattern)上的變形(例如，金屬突出到前側外)110。變形110可從晶圓之前側看到。擴散亦可在晶圓之薄前側Au層中形成空隙120。
現請參照圖2，來自銲錫的擴散可在當銲錫材料填充形成在基板中的通孔時發生。積體電路(IC)封裝200包括基板230、前側金層210以及背側金層220。當銲錫材料(例如，Au-Sn)240施用到背側金層220時，過度的潤濕銲錫可引起銲錫材料240填充在基板230中形成的通孔245，其中通孔之側係由背側金層220所覆蓋。此外，銲錫材料240可擴散到背側金層220中。在此情形中，銲錫材料240及前側金層210之擴散可藉由將變形260創造到前側金層210上而對IC 200引起損害。此外，擴散可引起在前側金層210及/或背側金層220之內側形成的空隙250。此外，在銲錫材料240與基板230之間的熱膨脹可造成對基板230的物理損害，像是當積體電路封裝200在高溫操作時的裂解(cracking)。當銲錫材料240填充通孔245時，可更增加對基板230的物理損害。
現請參照圖3A-3B，提出繪示從在傳統IC封裝中的銲錫擴散形成的空隙的圖。圖3A繪示在來自銲錫擴散在前側及背側金層中形成的細微空隙之範例。當銲錫材料(例如，在圖2中的240)填充通孔且擴散通過背側金層時，科肯德爾空隙(Kirkendall void)形成能在像是源極連接場板(source connected field plate)310和320的晶圓之前側上的金屬基板中發生。例如，銲錫材料可影響在閘極區域310中的源極連接場板。區域320顯示在與源極連接場板(SCFP; source-connected field plate)接觸歐姆接觸金屬之相鄰的區域中產生小尺寸的空隙。圖3B繪示由銲錫擴散引起的嚴重損害之範例。區域330、340顯示空隙形成於金層中，嚴重足以使得金層不再作用為接觸，其在350處創造隔離的(亦即，斷接的)區域。
現請參照圖4，提出依據本發明之範例實施例具有擴散阻障的積體電路(IC)封裝400。IC 400包含基板或晶圓430、前側金屬層410、背側金屬層420以及擴散阻障440。在實施例中，基板430可包含碳化矽。前側金屬層410可沉積在基板430上作為金屬互連，用以將主動及被動組件412連接。可使用金(Au)以形成前側金屬層，但可使用其它合適的材料。在實施例中，前側金屬層410結合IC封裝之其它金屬可提供蕭特基接觸(Schottky contact)或歐姆接觸(Ohmic contact)。
連接的主動/被動組件可在基板430上形成電路區域412。當完成前側層410之製造時，基板430更在背側處進行處理，其中形成一或多個通孔450通過基板，用以使能與前側金屬層410接觸以用於例如連接到地。在實施例中，通孔450可藉由蝕刻製程來形成。在一或多個通孔450中，藉由將金屬膜沉積在基板430之背側上以及在通孔450中基板之表面上來創造背側金屬層420。在通孔450之一端處，背側金屬層420產生與前側金屬層410的接觸。前側及背側金屬層410、420可包含金，但可使用任何合適的材料。在一些實施例中，前側金屬層可包含鈦(Ti)、金(Au)、鉑(Pt)或鋁(Al)。或者，銅(Cu)或像是鉭(Ta)和鎢(W)的耐火金屬(refractory metal)可被使用於前側金屬層。
背側金屬層420可實質地將通孔450的形狀維持。在實施例中，通孔450可具有錐形，使得通孔450的底部小於通孔450的頂部。在一些實施例中，其它材料的薄層，例如鈦(Ti)或鈦鎢(TiW)能提供前側層410及背側層420與基板430之間改善的接著(adhesion)。在其它實施例中，可提供其它材料之一或多層，用以降低層410、420之間的電子遷移(electromigration)。
一或多個斷裂或銲錫停止445可在背側金屬層420中形成。斷裂445防止在背側金屬層420中的直接擴散路徑。在實施例中，斷裂445可藉由圖案化過程在背側金屬層420中製造。在實施例中，將背側金層圖案化以具有斷裂445可藉由使用Au電鍍掩膜或Au蝕刻掩摸來完成。於此，擴散阻障斷裂445定位於晶圓之背部，在其中表面是平的，其比在通孔450中更易於覆蓋及圖案化。
擴散阻障440可接著沉積在通孔450中的背側金屬層420上和在通孔之頂部處以及在斷裂445中。擴散阻障440可實質地呈現通孔450的形狀。擴散阻障440可包含具有比背側金屬層420更低的銲錫材料之擴散率的金屬。擴散阻障440可橋接在背側金屬層420中的斷裂445。此外，斷裂445可對於擴散阻障440界定邊界的位置。當擴散阻障440材料具有比銲錫材料(例如，Au-Sn)更低的擴散率，則可降低或防止由銲錫擴散引起的損害。當IC封裝在用於預測產品壽命(life of the product)的正常操作溫度上被操作時，選定使得擴散率被降低到足以防止損害的用於擴散阻障440的材料。此外，擴散阻障440可防止潤濕銲錫460使得銲錫材料不會完整地填充通孔450。
在實施例中，擴散阻障440可包含鎳(Ni)。在其它實施例中，擴散阻障可包含氮化鈦(TiN)、氮化鎢(WN)、氮化鉭(TaN)或鉻(Cr)。在實施例中，可改變斷裂的尺寸至最小以對擴散提供充足的阻障，同時亦最小化在晶圓之背部上背側金屬層420與在通孔450中的背側金屬層420之間添加的電阻之衝擊。亦可使用具有較低擴散率且防止潤濕銲錫材料的任何其它合適的材料以形成擴散阻障440。於此，由於擴散阻障440係在背側金屬層上沉積，故能最小化結合的金屬層之串聯電阻，其係由於在比沉積於金屬層之間的擴散阻障更大的面積之上將電阻平均。
在實施例中，擴散阻障440可在施用銲錫材料460之前被氧化。由於將接觸銲錫材料的阻障材料氧化防止潤濕銲錫材料，故擴散阻障440亦可作用為銲錫潤濕阻障。在實施例中，在擴散阻障440上的銲錫460並未具有過度的潤濕狀況並且可實質上防止以銲錫材料460填充通孔450。在實施例中，通孔450之某部分可以銲錫材料460來填充。據此，銲錫材料460不應接觸在通孔450之底部處的背側金屬層420。因此，亦可更防止來自銲錫材料460的損害，像是在金屬層中的空隙(例如，圖2中的250)以及變形(例如，圖2中的260)。接地面(ground plane)470可設置在銲錫材料460之頂部上。接地面470可連接至地端(未繪示)並且作為用於來自在IC晶片上不同組件之電流的返回路徑。
現請參照圖5，提出用於製造具有擴散阻障的IC之說明性流程圖。在圖中，矩形元件(在圖5中由元件510所表示)，於此指示的「處理方塊」，代表指令或成群的指令。處理方塊可代表在過程中進行的步驟。所描述的方塊之特定排序僅為說明性的且可在不悖離於此尋求保護的概念、結構及技術之精神下改變。因此，除非另以陳述，下面描述的方塊係為無序的意義，當可能的時，由方塊代表的功能能夠以任何方便或所欲的次序來進行。
在處理步驟510中，提供基板或晶圓。在實施例中，基板(例如，圖4中的430)可包含碳化矽或p型基板。在處理步驟520中，在基板之前側上，沉積前側金屬層(例如，在圖3中的410)。在實施例中，前側金屬層410可包含金層。在處理步驟530中，複數個通孔係從基板之後側形成於基板中。在實施例中，通孔可藉由蝕刻製程來形成。在處理步驟540中，背側金屬層(例如，在圖3中的430)係沉積於通孔中。在實施例中，背側金屬層可包含金層。背側金屬層可與在基板中形成的通孔之形狀相符。背側金屬層亦包括在圖案化的背側金屬層中形成的斷裂(例如，在圖4中的445)。
在處理步驟550中，擴散層(例如，在圖4中的440)可沉積於背側金屬層上。在實施例中，擴散阻障可包含鎳(Ni)或任何其它合適的材料。擴散阻障可實質地維持通孔的形狀。
依據於此描述的概念，結合在背側金層中的擴散阻障斷裂和在通孔中以鎳(Ni)覆蓋電鍍的金將降低銲錫材料(Au-Sn)之錫(Sn)對金屬層擴散並且Au對銲錫層之擴散亦同。此外，能氧化相同的電鍍Ni結構以更防止潤濕在通孔中的Au-Sn銲錫。
已描述作為說明性之係為本專利的主題的各種概念、結構及技術的較佳實施例，現將變得更明白的是，可使用包含這些概念、結構及技術的其它實施例。據此，要提出的是本專利的範圍不應限於所揭露的實施例，而相反的應僅由下列的申請專利範圍之精神及範圍所限制。
據此，其它實施例係在下列申請專利範圍的範圍內。
400:積體電路封裝 410:前側金屬層 412:電路區域 420:背側金屬層 430:基板 440:擴散阻障 445:斷裂 450:通孔 460:銲錫 470:接地面
前述的特徵從下面圖式的描述將更全面地理解，其中：
[圖1]為繪示在先前技術積體電路中來自銲錫擴散的損害的例示性圖；
[圖2]為在先前技術積體電路中來自銲錫擴散的損害的剖面視圖；
[圖3A-3B]為在先前技術積體電路中來自銲錫擴散之在金屬層中形成的空隙的例示性圖；
[圖4]為依據於此說明的概念繪示具有擴散阻障的積體電路的剖面視圖；以及
[圖5]為依據於此說明的概念用於製造具有擴散阻障之晶圓的說明性流程圖。
400:積體電路封裝
410:前側金屬層
412:電路區域
420:背側金屬層
430:基板
440:擴散阻障
445:斷裂
450:通孔
460:銲錫
470:接地面

Claims (19)

  1. 一種用於製造積體電路的方法，該方法包含：設置具有前側及背側的基板；將前側金屬層沉積於該基板之前側上；在該基板中形成通孔；將背側金屬層沉積到該基板之背側上以及到該通孔中，使得該背側金屬層之部分連接至該前側金屬層之部分；將擴散阻障層沉積到位於該通孔中的該背側金屬層上，該擴散阻障實質上維持該通孔的形狀；形成位在該基板之該前側上且由該通孔分開的主動及/或被動組件之第一及第二區域，其中該前側金屬層包括互連，用以將該主動及/或被動組件之第一及第二區域中的組件連接；在該擴散阻障層和該通孔之上形成銲錫層；以及在該銲錫層之上形成接地面，其中到該接地面的路徑包括該銲錫層、該擴散阻障層、該背側金屬層及該前側金屬層。
  2. 如請求項1的方法，其中該擴散阻障包含鎳(Ni)層。
  3. 如請求項1的方法，其中該擴散阻障包含氮化鉭、氮化鎢、氮化鈦及鉻之其中至少一者。
  4. 如請求項1的方法，其中該擴散阻障被氧 化以形成銲錫潤濕阻障。
  5. 如請求項1的方法，更包含將銲錫層沉積在僅填充該通孔之部分的該擴散阻障上面。
  6. 如請求項1的方法，更包含：將黏合材料之薄層沉積在該前側金屬層與該背側金屬層之間。
  7. 如請求項1的方法，其中所述沉積該擴散阻障的步驟包含圖案化在該背側金屬層之上的該擴散阻障。
  8. 如請求項1的方法，其中該背側金屬層包含鄰近對應該基板之背側的該通孔的一端的斷裂，且更包括將該擴散阻障沉積到該斷裂中。
  9. 如請求項1的方法，其中該前側金屬層包含金。
  10. 如請求項1的方法，其中該背側金屬層包含金。
  11. 一種積體電路包含：具有前側及背側的基板；沉積於該基板之前側上的前側金屬層；沉積到該基板之背側上以及到形成在該基板中之通孔中的背側金屬層，其中該背側金屬層之部分連接至該前側金屬層之部分；沉積到位於該通孔中的該背側金屬層上的擴散阻障，其中該擴散阻障實質上維持該通孔的形狀； 位在該基板之該前側上且由該通孔分開的主動及/或被動組件之第一及第二區域，其中該前側金屬層包括互連，用以將該主動及/或被動組件之第一及第二區域中的組件連接；在該擴散阻障層和該通孔之上的銲錫層；以及在該銲錫層之上的接地面，其中到該接地面的路徑包括該銲錫層、該擴散阻障層、該背側金屬層及該前側金屬層。
  12. 如請求項11的積體電路，其中該擴散阻障包含鎳(Ni)層。
  13. 如請求項11的積體電路，其中該擴散阻障包含氮化鉭、氮化鎢、氮化鈦及鉻之其中至少一者。
  14. 如請求項11的積體電路，其中該擴散阻障被氧化以形成銲錫潤濕阻障。
  15. 如請求項11的積體電路，其中沉積在該擴散阻障上面的該銲錫層填充該通孔的部分。
  16. 如請求項11的積體電路，更包含：沉積在該前側金屬層與該背側金屬層之間的黏合材料之薄層。
  17. 如請求項11的積體電路，其中該前側金屬層包含金。
  18. 如請求項11的積體電路，其中該背側金屬層包含金。
  19. 如請求項11的積體電路，其中該背側金 屬層包括在該基板之該背側處的停止層。
TW109107703A 2019-03-25 2020-03-09 圖案化晶圓銲錫擴散阻障 TWI745880B (zh)

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