TWI734235B - 電性貼附結構及其形成方法 - Google Patents
電性貼附結構及其形成方法 Download PDFInfo
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- TWI734235B TWI734235B TW108138884A TW108138884A TWI734235B TW I734235 B TWI734235 B TW I734235B TW 108138884 A TW108138884 A TW 108138884A TW 108138884 A TW108138884 A TW 108138884A TW I734235 B TWI734235 B TW I734235B
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Abstract
一種電性貼附結構,其包含一基板、一接觸墊組,以及一微型元件以及一電極組之組合。接觸墊組位於基板之上,其中接觸墊組包含至少一接觸墊,並且至少一接觸墊是導電的。組合位於接觸墊組之上,電極組之相對兩側分別與微型元件以及接觸墊組相接觸。接觸墊組與電極組間之接觸周邊於基板上之垂直投影係較該微型元件之外周邊於基板上之垂直投影為長,其中接觸周邊於基板上之垂直投影被外周邊於基板上之垂直投影所包圍。
Description
本揭露關於一種電性貼附結構以及一種形成一電性貼附結構的方法。
本段中之陳述僅提供與本揭露相關的背景資訊,並不必然構成先前技術。
用於轉移元件的傳統技術包含藉由晶片接合從轉移晶片轉移到接收基板。一種這樣的實施方式是「直接接合」,其涉及從轉移晶片到接收基板之元件陣列的一個接合步驟,然後再移除轉移晶片。另一種這樣的實施方式是「間接接合」,其涉及兩個接合/剝離步驟。在間接接合中,轉移頭可以從施主基板拾取元件陣列,再將元件陣列接合到接收基板,然後移除轉移頭。
可能影響轉移品質的重要議題之一是元件與接收晶片接觸的瞬間。依據本揭露一些實施例,提供一種電性貼附結構。電性貼附結構包含基板、接觸墊組,以及微型元件以及電極組之組合。該接觸墊組位於基板之上,其中該接觸墊組包含至少
一接觸墊,並且至少一接觸墊是導電的。微型元件以及電極組之組合位於接觸墊組之上,電極組包含至少一電極,電極組之相對兩側分別與微型元件以及接觸墊組相接觸。接觸墊組與電極組間之接觸周邊於基板上之垂直投影係較微型元件之外周邊於基板上之垂直投影為長,其中接觸周邊於基板上之垂直投影係被外周邊於基板上之垂直投影所包圍。
依據本揭露一些實施例,提供一種形成電性貼附結構的方法。所述方法包含:於基板上形成接觸墊組,其中該接觸墊組包含至少一接觸墊,並且至少一接觸墊是導電的;將微型元件以及電極組之組合放置於該接觸墊組之上,而使電極組之相對兩側分別與微型元件以及接觸墊組相接觸,電極組包含至少一電極,該接觸墊組與電極組間之一接觸周邊於基板上之垂直投影係較微型元件之外周邊於基板上之垂直投影為長,並且接觸周邊於基板上之垂直投影係被該微型元件之該外周邊於基板上之垂直投影所包圍;於電極組以及接觸墊組之間形成液體層,以使微型元件被液體層所產生之毛細力抓住;以及蒸發液體層,使得電極組貼附至接觸墊組並且與接觸墊組電性連接。
為了讓本揭露的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。
100A、100E‧‧‧電性貼附結構
110‧‧‧基板
120A、120A’、120A”、120A”’、120B、120C、120D、120D’、120E、120F‧‧‧接觸墊組
120A-1、120A”’-1‧‧‧接觸墊
120A-tcs‧‧‧頂接觸表面
130A、130A’、130A”、130A”’、130B、130C、130D、130D’、130E、130F‧‧‧電極組
130A-1、130A”’-1‧‧‧電極
130A-bcs‧‧‧底接觸表面
140‧‧‧微型元件
150‧‧‧液體層
152‧‧‧彎月面
200‧‧‧方法
L‧‧‧側向長度
OP‧‧‧外周邊
CP、CP1、CP2、CP3、CP4‧‧‧接觸周邊
PCP‧‧‧原始接觸周邊
SP‧‧‧凹陷部分
T‧‧‧厚度
HP‧‧‧空心部
210-240‧‧‧操作
當結合隨附圖式閱讀時,自以下詳細描述將最佳地理解本揭露之態樣。應注意,根據工業中之標準實務,各特徵未必依比例繪示。實際上,可出於論述清晰之目的而增減所說明的特徵之尺寸。
第1A圖是依據本揭露一些實施例之一電性貼附結構的剖面示意圖;
第1B圖是依據本揭露一些實施例之一電性貼附結構的透視圖;
第1C圖是依據本揭露一些實施例之一接觸墊組之一頂接觸表面的底視圖;
第1D圖是依據本揭露一些實施例之一電極組之一底接觸表面的底視圖;
第1E圖是依據本揭露一些實施例當一電極組靠近或接觸一接觸墊組時,接觸墊組以及電極組的底視圖;
第1F圖是依據本揭露一些實施例之一接觸周邊的示意圖;
第1G圖是依據本揭露一些實施例之一原始接觸周邊的示意圖;
第1H圖是依據本揭露一些實施例與一電極組以及一接觸墊組相接觸之一液體層的示意性透視圖;
第2圖是依據本揭露一些實施例當一電極組靠近或接觸一接觸墊組時,接觸墊組以及電極組的底視圖;
第3A圖是依據本揭露一些實施例當一電極組靠近或接觸一接觸墊組時,接觸墊組以及電極組的底視圖;
第3B圖是依據本揭露一些實施例當一電極組靠近或接觸一接觸墊組時,接觸墊組以及電極組的底視圖;
第4圖是依據本揭露一些實施例當一電極組靠近或接觸一接觸墊組時,接觸墊組以及電極組的頂視圖;
第5A圖是依據本揭露一些實施例之一種類型之一接觸
墊組以及一電極組的剖面圖;
第5B圖是依據本揭露一些實施例之一種類型之一接觸墊組以及一電極組的剖面圖;
第5C圖是依據本揭露一些實施例之一種類型之一接觸墊組以及一電極組的剖面圖;
第6A圖是依據本揭露一些實施例之一電性貼附結構的剖面示意圖;
第6B圖是依據本揭露一些實施例當一電極組靠近或接觸一接觸墊組時,接觸墊組以及電極組的底視示意圖;
第7圖是依據本揭露一些實施例當一電極組靠近或接觸一接觸墊組時,接觸墊組以及電極組的底視示意圖;
第8圖是依據本揭露一些實施例之一形成一電性貼附結構的方法的流程圖;
第9A圖是依據本揭露一些實施例之形成電性貼附結構的方法之中間階段剖面示意圖;
第9B圖是依據本揭露一些實施例之形成電性貼附結構的方法之中間階段剖面示意圖;
第9C圖是依據本揭露一些實施例之形成電性貼附結構的方法之中間階段剖面示意圖;以及
第9D圖是依據本揭露一些實施例之形成電性貼附結構的方法之中間階段剖面示意圖。
以下將以圖式及詳細說明闡述本揭露之精神,任何所屬技術領域中具有通常知識者在瞭解本揭露之較佳實施例後,
當可由本揭露所教示之技術,加以改變及修飾,其並不脫離本揭露之精神與範圍。
在各種實施例中,參考附圖進行描述。然而,某些實施例可以在沒有這些實務細節中的一個或多個的情況下實施,或者與其他已知方法及配置組合實施。在以下的敘述中,為明確說明起見,許多實務上的細節,例如實務上的配置、尺寸、及製程等,將在以下敘述中一併說明。此外,一些習知慣用的半導體製程與製造技術並沒有被特別詳細地描述,以免不必要地模糊本揭露。貫穿全篇說明書對「一個實施例」、「實施例」等的引用意味著與該實施例相關的描述的特定特徵、結構、配置或者特性係包含在本揭露的至少一個實施例中。因此,貫穿全篇說明書在各個地方出現的片語「在一個實施例中」、「在實施例中」等不一定是指本揭露的相同實施例。此外,特定特徵、結構、配置或者特性可以在一個或多個實施例中以任何適合的方式組合。
這裡使用的術語「在......之上方」、「到」、「於」、「至」、「在......之間」、及「在...之上」可以指一層相對於其他層的相對位置。一層在另一層「之上方」或「之上」或黏合「到」、「於」或「至」另一層可以是直接與另一層接觸,或者可以具有一個或多個中間層。多個層「之間」的一層可以直接與這些層接觸,或者可以具有一個或多個中間層。
請參照第1A圖至第1E圖,第1A圖是依據本揭露一些實施例之一電性貼附結構100A的剖面示意圖,第1B圖是依據本揭露一些實施例之電性貼附結構100A的透視圖,第1B圖提供了三維視圖,其使得電性貼附結構100A的結構特徵更容易理
解。第1C圖是依據本揭露一些實施例之一接觸墊組120A之一頂接觸表面120A-tcs的底視圖,第1D圖是依據本揭露一些實施例之一電極組130A之一底接觸表面130A-bcs的底視圖,第1E圖是依據本揭露一些實施例當電極組130A靠近或接觸接觸墊組120A時,接觸墊組120A的底視圖。注意,在第1E圖中不存在電極組130A的標號,因為電極組130A在底視圖與接觸墊組120A重合(或完全重疊)。電性貼附結構100A包含一基板110、一接觸墊組120A、以及一微型元件140與一電極組130A之一組合。接觸墊組120A係位於基板110之上,其中接觸墊組120A包含至少一接觸墊120A-1,並且接觸墊120A-1是導電的。於一些實施例中,接觸墊組120A之一厚度係小於或等於約2微米(μm),並且優選地小於或等於約0.5微米。微型元件140以及電極組130A之組合係位於接觸墊組120A之上,電極組130A包含至少一電極130A-1。於一些實施例中,電極組130A之一厚度範圍是約0.2微米至約2微米,並且優選地範圍為約0.3微米至約1微米。電極組130A之相對兩側分別與微型元件140以及接觸墊組120A相接觸。接觸墊組120A與電極組130A間之(一接觸區域之)一接觸周邊CP於基板110上之一垂直投影係較微型元件140之一外周邊OP於基板110上之一垂直投影為長。接觸周邊CP於基板110上之垂直投影係被微型元件140之外周邊OP於基板110上之垂直投影所包圍。
第1F圖是依據本揭露一些實施例之一接觸周邊CP的示意圖,第1G圖是依據本揭露一些實施例之一原始接觸周邊PCP的示意圖,第1H圖是依據本揭露一些實施例之分別與電極組130A以及接觸墊組120A相接觸之一液體層150的示意性透視
圖。於一些實施例中,由於接觸墊組120A(例如,如在第1C圖中所例示的「H」的形狀)以及電極組130A(例如,如在第1D圖中所例示的「H」的形狀)的故意設計的形狀,當接觸墊組120A與電極組130A靠近它們之間的液體層150(例如一水層)並且液體層150之相對兩側分別接觸接觸墊組120A與電極組130A時,接觸周邊CP(如第1F圖所示)之一總長度係大於原始接觸周邊PCP之一總長度,其中接觸墊組120A與電極組130A的形狀並非故意設計的(如第1G圖所示)。第1F圖可能也有助於理解所敘述的實施例。這些故意設計的形狀係被設計以增加接觸墊組120A與電極組130A之間的接觸周邊CP的總長度。以第1C圖與第1D圖所示的實施例為例,當接觸墊組120A與電極組130A的形狀為「H」時,接觸周邊CP係大於原始接觸周邊PCP,其中接觸墊組120A與電極組130A兩者的形狀均為正方形。注意的是,此比較是在如果重新填充「H」的凹陷部分SP(如圖1F所示)的假定下進行的,在此情況下,其總面積將與第1G圖所示正方形的總面積相同。
說明上述實施例之透視(三維視)圖係如第1B圖及第1H圖所示。於一些實施例中,電極組130A與接觸墊組120A可以彼此靠近並與它們之間的液體層150相接觸,使得電極組130A與其上的微型元件140之組合被液體層150所產生之一毛細力抓住(例如,參考第1H圖,其中由於毛細力而形成的液體層150的彎月面152)。然後,液體層150被蒸發使得電極組130A黏附固定並貼附至接觸墊組120A。於這些實施例中,由於接觸墊組120A與電極組130A被設計為「H」形,此毛細力係大於當電極組130A與接觸墊組120A都被設計成正方形時的情況。此較大的毛細力
對於貼附的品質以及隨後電極組130A與接觸墊組120A之間的黏合有很大幫助,因為當電極組130A黏附於液體層150時,毛細力可以幫助將電極組130A固定在可控區域內。進一步地,在液體層150蒸發時和液體層150蒸發之後,此毛細力可以有助於在電極組130A與接觸墊組120A之間形成貼附(以及亦形成黏合)。此貼附是有助於抓住與接觸的這些種類的液體層150中發現的特殊現象。此黏合是兩個物體(通常為金屬)相接觸並且原子在兩物體間擴散時產生的現象。於一些實施例中,微型元件140之一側向長度L係小於或等於約100微米,側向長度L的限制是為了確保毛細力顯著地幫助並支配電極組130A與接觸墊組120A之間的貼附。
值得注意的是,當電極組130A與接觸墊組120A相接觸時,接觸周邊CP以及原始接觸周邊PCP可被解釋為單個接觸周邊(或是複數個分離的接觸周邊,如稍後將在一些實施例中所提到的)。當液體層150係介於電極組130A以及接觸墊組120A之間並與電極組130A以及接觸墊組120A相接觸時,它們也可以被解釋為單個接觸周邊(或是多個接觸周邊)。在這種情形之下,接觸周邊CP(以及原始接觸周邊PCP)係被視為具有一厚度T(如第1H圖所示)的周邊,而厚度T是從電極組130A之底接觸表面130A-bcs經由液體層150的周邊測量到接觸墊組120A之頂接觸表面120A-tcs。
請參照第2圖至第3B圖,第2圖是依據本揭露一些實施例當一電極組130A’靠近或接觸一接觸墊組120A’時,接觸墊組120A’以及電極組130A’(未明確示出,因為它與第2圖中的接觸墊組120A’重疊並位於其後)的底視圖。第3A圖是依據本揭
露一些實施例當一電極組130A”靠近或接觸一接觸墊組120A”時,接觸墊組120A”以及電極組130A”(未明確示出,因為它與第3A圖中的接觸墊組120A”重疊並位於其後)的底視圖。第3B圖是依據本揭露一些實施例當一電極組130A”’靠近或接觸一接觸墊組120A”’時,接觸墊組120A”’以及電極組130A”’(未明確示出,因為它與第3B圖中的接觸墊組120A”’重疊並位於其後)的底視圖。接觸墊組120A”’包含複數個接觸墊120A”’-1,並且電極組130A”’包含複數個電極130A”’-1(未明確示出,因為它們與第3B圖中的接觸墊120A”’-1重疊並位於其後)。注意,在第2圖至第3B圖中電極組130A’、130A”、130A”’並未被標示,因為電極組130A’、130A”、130A”’在底視圖分別與接觸墊組120A’、120A”、120A”’重合(或完全重疊)。注意第1A圖也可以被第2圖所解釋,因為第1A圖是剖面圖。在第2圖所示的實施例中,接觸墊組120A’與電極組130A’被挖空,使得接觸周邊CP由彼此分離的一第一接觸周邊CP1與一第二接觸周邊CP2所組成(即,CP=CP1+CP2)。在本揭露的不同實施例中,即使存在不同形狀的接觸周邊,所有的接觸周邊為簡單起見僅被標示為「CP」。第2圖所示的實施例的技術效果係類似於第1C圖至第1E圖所示實施例的技術效果,將不再詳細描述。
第3A圖所示的實施例可以被視為是對第2圖所示實施例的修改。第3A圖所示實施例的接觸墊組120A”與電極組130A”具有複數個分離的空心部HP。第3B圖所示實施例,其中複數個接觸墊120A”’-1以及複數個電極130A”’-1(再次,由於「重合」而未明確顯示)形成複數個接觸周邊CP1、CP2、CP3...等,接觸周邊CP是此複數個接觸周邊CP1、CP2、CP3...等的總
和。注意,這些接觸墊120A”’-1之一係被連接到外面並且被電性連接至一施加電壓源(未顯示於圖中)。
第4圖是依據本揭露一些實施例當一電極組130B靠近或接觸一接觸墊組120B時,接觸墊組120B以及電極組130B的頂視圖。在這些實施例中,微型元件140的尺寸(或一側向長度L)係小於接觸墊組120B。
請參照第5A圖至第5C圖,第5A圖至第5C圖係分別為依據本揭露一些實施例之三種不同類型的接觸墊組以及電極組的剖面圖。在這些實施例中,至少一接觸周邊CP於基板110上之一垂直投影係被接觸墊組120C、120D、120D’於基板110上之一垂直投影及/或電極組130C、130D、130D’於基板110上之一垂直投影跨越。
請參照第6A圖、第6B圖以及第7圖,第6A圖是依據本揭露一些實施例之一電性貼附結構100E的剖面示意圖,第6B圖是依據本揭露一些實施例當一電極組130E靠近或接觸一接觸墊組120E時,接觸墊組120E以及電極組130E(再次,由於「重合」而未明確顯示)的底視示意圖,第7圖是依據本揭露一些實施例當一電極組130F靠近或接觸一接觸墊組120F時,接觸墊組120F以及電極組130F(再次,由於「重合」而未明確顯示)的底視示意圖。第6A圖與第6B圖示出了接觸墊組120E與電極組130E具有一鋸齒形(zigzag)(或類似於一鋸齒)的實施例,而第7圖示出了具有一螺旋形的接觸墊組120F與電極組130F的實施例。上述實施例展示了一些其他可能的結構特徵,這些結構特徵遵守如上所述的所有限制,並且也能夠增加毛細力。
第8圖是依據本揭露一些實施例之一形成一電性貼
附結構100A的方法200的流程圖,第9A圖至第9D圖是依據本揭露一些實施例之第8圖的方法200的中間階段剖面示意圖。請參照第8圖至第9D圖,方法200開始於操作210,其中一接觸墊組120A係形成於一基板110上,而其中接觸墊組120A包含至少一接觸墊120A-1,並且接觸墊120A-1是導電的(參照第9A圖)。於一些實施例中,在形成接觸墊組120A之前,於基板110上形成一黏著層(未顯示於圖中)。方法200繼續進行操作220,其中一微型元件140以及一電極組130A之一組合係被放置於接觸墊組120A之上,而使電極組130A之相對兩側分別與微型元件140以及接觸墊組120A相接觸,電極組130A包含至少一電極130A-1。接觸墊組120A與電極組130A間之一接觸周邊CP於基板110上之一垂直投影係較微型元件140之一外周邊OP於基板110上之一垂直投影為長,並且接觸周邊CP於基板110上之垂直投影係被微型元件140之外周邊OP於基板110上之垂直投影所包圍(參照第9B圖)。
方法200繼續進行操作230,其中一液體層150係被形成於電極組130A以及接觸墊組120A之間,以使微型元件140被液體層150所產生之一毛細力抓住(參照第9C圖)。於一些實施例中,液體層150包含水。值得注意的是,操作220與操作230可以被互換。於一些其他實施例中,液體層150係被形成於接觸墊組120A之上,接著電極組130A以及微型元件140之組合被放置於接觸墊組120A之上,使得電極組130A接觸液體層150,並且被液體層150所產生的毛細力抓住。於一些實施例中,液體層150可藉由在包含一蒸氣之一環境降低接觸墊組120A之一溫度而形成,使至少一部份之此蒸氣凝結以形成液體層150。於一些實
施例中,液體層150在約大露點的溫度下形成。在一些實施例中,液體層150可以藉由在基板110上噴灑蒸氣來形成,使得至少一部分的蒸氣凝結以形成液體層150。於一些實施例中,此蒸氣之水蒸氣壓高於環境水蒸氣壓,蒸氣基本上由氮及水所組成。在一些實施例中,當微型元件140被液體層150所產生的毛細力抓住時,介於電極組130A以及接觸墊組120A間之液體層150之一厚度係小於微型元件140之一厚度。
方法200繼續進行操作240,其中液體層150被蒸發,使得電極組130A黏附固定並貼附至接觸墊組120A並且電性連接至接觸墊組120A(參照第9D圖)。於一些實施例中,藉由升高接觸墊組120A之一溫度來蒸發液體層150。在一些實施例中,接觸墊組120A與電極組130A之一包含一黏合材料,並且接觸墊組120A之溫度可被進一步升高到一溫度點,以將電極組130A黏合到接觸墊組120A。此溫度點可高於黏合材料之一熔點,低於黏合材料之熔點並高於液體層150之一沸點,或是高於接觸墊組120A與電極組130A之一共晶點。於一些實施例中,黏合材料之一厚度範圍是約0.2微米至約2微米,在一些實施例中,黏合材料之一優選厚度範圍為約0.3微米至約1微米。接觸墊組120A與電極組130A之一者可包含銅(copper)及富含銅的材料之一。此黏合材料可為富含錫(tin)的材料、富含銦(indium)的材料、或是富含鈦(titanium)的材料。這裡的「富含」意味著佔原子總數的一半以上。
綜上所述,一種電性貼附結構及其形成方法提供以幫助電極組與接觸墊組之間的液體層抓住電極組並將電極組貼附到接觸墊組。此電性貼附結構正如同說明書所述,可使接觸周邊
大於原始接觸周邊,以增強由液體層所產生用於抓住電極的毛細力。
雖然本揭露已以實施例發明如上,然其並非用以限定本揭露,任何熟習此技藝者,在不脫離本揭露之精神和範圍內,當可作各種之更動與潤飾,因此本揭露之保護範圍當視後附之申請專利範圍所界定者為準。
120A‧‧‧接觸墊組
120A-1‧‧‧接觸墊
130A‧‧‧電極組
130A-1‧‧‧電極
140‧‧‧微型元件
CP‧‧‧接觸周邊
Claims (18)
- 一種電性貼附結構,包含:一基板;一接觸墊組位於該基板之上,其中該接觸墊組包含至少一接觸墊,其中該接觸墊是導電的;以及一微型元件以及一電極組之組合位於該接觸墊組之上,該電極組包含至少一電極,該電極組之相對兩側分別與該微型元件以及該接觸墊組相接觸,該接觸墊組與該電極組間之接觸周邊於該基板上之垂直投影係較該微型元件之外周邊於該基板上之垂直投影為長,其中該接觸周邊於該基板上之該垂直投影係被該外周邊於該基板上之該垂直投影所包圍,且該微型元件之側向長度小於或等於約100微米。
- 如請求項1所述之電性貼附結構,另包含一黏著層介於該接觸墊組與該基板之間。
- 如請求項1所述之電性貼附結構,其中該接觸墊組與該電極組之一者包含銅、錫、鈦以及銦其中一者。
- 一種形成一電性貼附結構的方法,包含:於基板上形成接觸墊組,其中該接觸墊組包含至少一接觸墊,並且該至少一接觸墊是導電的;將微型元件以及電極組之組合放置於該接觸墊組之上,而使該電極組之相對兩側分別與該微型元件以及該接觸墊組相接觸,該電極組包含至少一電極,該接觸墊組與該電極組間之接觸周邊 於該基板上之垂直投影係較該微型元件之外周邊於該基板上之垂直投影為長,並且該接觸周邊於該基板上之該垂直投影係被該微型元件之該外周邊於該基板上之該垂直投影所包圍;於該電極組以及該接觸墊組之間形成液體層,以使該微型元件被該液體層所產生之毛細力抓住;以及蒸發該液體層,使得該電極組貼附至該接觸墊組並且與該接觸墊組電性連接。
- 如請求項4所述之方法,其中形成該液體層包含:於包含一蒸氣之環境,降低該接觸墊組之溫度,使至少一部份之該蒸氣凝結以形成該液體層。
- 如請求項4所述之方法,其中形成該液體層包含:於該基板上噴灑一蒸氣,使得至少一部分的該蒸氣凝結以形成該液體層。
- 如請求項6所述之方法,其中該蒸氣之水蒸氣壓高於環境水蒸氣壓。
- 如請求項6所述之方法,其中該蒸氣基本上由氮及水所組成。
- 如請求項4所述之方法,其中另包含在形成該接觸墊組之前,於該基板上形成黏著層。
- 如請求項4所述之方法,其中該液體層包含水。
- 如請求項5所述之方法,其中該液體層在大約露點的溫度下形成。
- 如請求項4所述之方法,其中蒸發該液體層包含:於該液體層被蒸發之後,升高該接觸墊組之溫度,使得該電極組黏附固定至該接觸墊組。
- 如請求項4所述之方法,其中該接觸墊組以及該電極組之至少一者包含黏合材料,並且該方法另包含:於蒸發該液體層之後,升高該接觸墊組之溫度至高於該黏合材料之熔點。
- 如請求項4所述之方法,其中該接觸墊組以及該電極組之至少一者包含黏合材料,並且該方法另包含:於蒸發該液體層之後,升高該接觸墊組之溫度至低於該黏合材料之熔點並高於該液體層之沸點。
- 如請求項4所述之方法,另包含:於蒸發該液體層之後,升高該接觸墊組之溫度至高於該接觸墊組與該電極組之共晶點。
- 如請求項4所述之方法,其中當該微型元件被 該毛細力抓住時,介於該電極組以及該接觸墊組間之該液體層之厚度小於該微型元件之厚度。
- 如請求項4所述之方法,其中該接觸墊組與該電極組之一者包含銅、錫、鈦以及銦其中一者。
- 如請求項4所述之方法,其中該微型元件之側向長度小於或等於約100微米。
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TW577249B (en) * | 2003-05-09 | 2004-02-21 | Asustek Comp Inc | Printed steel plate and process applied in SMT assembly of SMT electronic components |
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US20200335463A1 (en) | 2020-10-22 |
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CN111834321B (zh) | 2024-02-13 |
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