TWI735955B - 限制微型元件於導電墊上的方法 - Google Patents
限制微型元件於導電墊上的方法 Download PDFInfo
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- TWI735955B TWI735955B TW108134466A TW108134466A TWI735955B TW I735955 B TWI735955 B TW I735955B TW 108134466 A TW108134466 A TW 108134466A TW 108134466 A TW108134466 A TW 108134466A TW I735955 B TWI735955 B TW I735955B
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- conductive pad
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- 238000000034 method Methods 0.000 title claims abstract description 43
- 239000007788 liquid Substances 0.000 claims abstract description 51
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 239000000463 material Substances 0.000 claims description 25
- 239000000853 adhesive Substances 0.000 claims description 17
- 230000001070 adhesive effect Effects 0.000 claims description 17
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 9
- 238000002844 melting Methods 0.000 claims description 8
- 230000008018 melting Effects 0.000 claims description 8
- 230000005496 eutectics Effects 0.000 claims description 3
- 238000001704 evaporation Methods 0.000 claims 4
- 230000003750 conditioning effect Effects 0.000 claims 1
- 239000002184 metal Substances 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000007789 gas Substances 0.000 description 8
- 230000000694 effects Effects 0.000 description 6
- 238000001816 cooling Methods 0.000 description 5
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
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Abstract
一種限制微型元件於導電墊上的方法。該方法包含:形成導電墊於基板上,導電墊具有第一側向長度;形成液體層於導電墊上;以及放置具有第二側向長度的微型元件於導電墊的上方,使得微型元件接觸液體層,並由位於微型元件和導電墊之間的液體層所產生的毛細力抓住微型元件,微型元件包含電極,電極面向導電墊,其中第一側向長度小於或等於兩倍的第二側向長度。
Description
本揭露是關於一種在製造過程中限制微型元件之位置的方法。
此處的陳述僅提供與本揭露有關的背景信息,而不必然地構成現有技術。
近年來,微型元件在許多應用領域都逐漸興起。隨著微型元件尺寸的縮小,微型元件在基板上的位置精度成為製造過程中的重要議題。
本揭露的一些實施方式公開了一種限制微型元件於導電墊上的方法。該方法包含:形成導電墊於基板上,導電墊具有第一側向長度;形成液體層於導電墊上;以及放置具有第二側向長度的微型元件於導電墊的上方,使得微型元件接觸液體層,並由位於微型元件和導電墊之間的液體層所產生的毛細力抓住微型元件,微型元件包含電極,電極面向導電墊,其中第一側向長度小於或等於兩倍的第二側向長度。
為了讓本揭露的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。
100‧‧‧限制微型元件於導電墊上的方法
110、120、130‧‧‧操作
210‧‧‧基板
220‧‧‧導電墊
222‧‧‧金屬墊
224‧‧‧黏合材料
230‧‧‧液體層
240‧‧‧微型元件
242‧‧‧電極
2422‧‧‧金屬電極
2424‧‧‧黏合材料
250‧‧‧氣體
L1‧‧‧第一側向長度
L2‧‧‧第二側向長度
LT‧‧‧冷卻裝置
當結合隨附圖式閱讀時,自以下詳細描述將最佳地理解本揭露之態樣。應注意,根據工業中之標準實務,各特徵未必依比例繪示。實際上,可出於論述清晰之目的而增減所說明的特徵之尺寸。
第1圖繪示本揭露一些實施例中限制微型元件於導電墊上的方法的流程示意圖。
第2A圖繪示本揭露一些實施例中限制微型元件於導電墊上的方法的中間階段的剖面示意圖。
第2B圖繪示本揭露一些實施例中限制微型元件於導電墊上的方法的中間階段的上視示意圖。
第3圖繪示本揭露一些實施例中限制微型元件於導電墊上的方法的中間階段的剖面示意圖。
第4A圖繪示本揭露一些實施例中限制微型元件於導電墊上的方法的中間階段的剖面示意圖。
第4B圖繪示本揭露一些實施例中限制微型元件於導電墊上的方法的中間階段的上視示意圖。
第5圖繪示本揭露一些實施例中限制微型元件於導電墊上的方法的中間階段的剖面示意圖。
第6A圖繪示本揭露一些實施例中貼附複數個微型元件的方法的中間階段的剖面示意圖。
第6B圖繪示本揭露一些實施例中貼附複數個微型元件的方法的中間階段的剖面示意圖。
第6C圖繪示本揭露一些實施例中貼附複數個微型元件的方法的中間階段的剖面示意圖。
第7A圖繪示本揭露一些實施例中微型元件在導電墊上的剖面示意圖。
第7B圖繪示本揭露一些實施例中微型元件在導電墊上的剖面示意圖。
第8圖繪示本揭露一些實施例中微型元件在導電墊上的剖面示意圖。
第9圖繪示本揭露一些實施例中微型元件在導電墊上的剖面示意圖。
第10A圖繪示本揭露一些實施例中微型元件在導電墊上的剖面示意圖。
第10B圖繪示本揭露一些實施例中微型元件在導電墊上的上視示意圖。
為更進一步闡述本揭露為達成預定揭露目的所採取的技術手段及功效,以下結合圖式及較佳實施例,對依據本揭露提出的限制微型元件於導電墊上的方法,其具體實施方式、結構、方法、步驟、特徵及其功效,詳細說明如後。
有關本揭露的前述及其他技術內容、特點及功效,在以下配合參考圖式的較佳實施例的詳細說明中將可清楚
呈現。通過具體實施方式的說明,當可對本揭露為達成預定目的所採取的技術手段及功效更加深入且具體的瞭解,然而所附圖式僅是提供參考與說明之用,並非用來對本揭露加以限制。
為簡化圖式,一些現有已知慣用的結構與元件在圖式中將以簡單示意的方式繪示。並且,除非有其他表示,在不同圖式中相同的元件符號可視為相對應的元件。這些圖式的繪示是為了清楚表達這些實施方式中各元件之間的連接關係,並非繪示各元件的實際尺寸。
參考第1圖至第4B圖。第1圖繪示本揭露一些實施例中限制微型元件於導電墊上的方法100的流程示意圖。第2A圖、第3圖和第4A圖繪示本揭露一些實施例中方法100的中間階段的剖面示意圖。第圖2B和第4B圖繪示本揭露一些實施例中方法100的中間階段的上視示意圖。本揭露的一些實施例提供限制微型元件於導電墊上的方法100。方法100從操作110開始,形成導電墊220於基板210上,導電墊220具有第一側向長度L1(參考第2A圖和第2B圖)。方法100接著進行操作120,形成液體層230於導電墊220上(參考第3圖)。方法100接著進行操作130,放置微型元件240於導電墊220上,微型元件240具有第二側向長度L2(參考第4A圖和第4B圖)。側向長度為平行於X-Y平面所量測的長度,X-Y平面是由上面所提到的圖式中所示的X方向和Y方向所定義的,側向長度的方向垂直於厚度方向(亦即,垂直於Z方向)。
參考第3圖,形成液體層230於導電墊220上。在一些實施例中,液體層230包含水。液體層230可以用下述實
施例所描述的至少兩種方法形成。在一些實施例中,在包含蒸氣的環境中調節導電墊220的溫度至一選定溫度點,使得一部分的蒸氣凝結而在導電墊220上形成液體層230。前述的選定溫度點可以是露點。在一些實施例中,局部地噴灑氣體至導電墊220和一部分的基板210上,使得一部分氣體凝結並在導電墊220上形成液體層230。在一些實施例中,氣體的水蒸氣壓高於環境水蒸氣壓,從而在前述噴灑後自發性地形成液體層230。在一些實施例中,氣體主要由氮和水所組成,但不應完全排除其他化合物或元素。當一開始噴灑的氣體的水蒸氣壓低於環境水蒸氣壓時,氣體亦可於調節導電墊220的溫度至露點後形成液體層230。
參考第4A圖和第4B圖,放置具有第二側向長度L2的微型元件240於導電墊220的上方,使得微型元件240接觸液體層230並由位於微型元件240和導電墊220之間的液體層230所產生的毛細力抓住微型元件240。微型元件240具有電極242,電極242面向導電墊220。在一些實施例中,當毛細力抓住微型元件240時,液體層230的厚度小於微型元件240的厚度,這使得液體層230可抓住微型元件240,且微型元件240的位置保持在導電墊220上的可控區域內。在一些實施例中,第一側向長度L1小於或等於兩倍的第二側向長度L2。在一些實施例中,第一側向長度L1大於或等於三分之二的第二側向長度L2。藉由第一側向長度L1和第二側向長度L2之間的長度限制關係,微型元件240具有較高機會保持在導電墊220上的可控區域內。前述的功效在上述液體層230是用來將微型元件
240貼附至導電墊220的情形時尤為顯著。詳細而言,藉由第一側向長度L1和第二側向長度L2的長度限制關係,一部分在導電墊220上的液體層230趨向於聚集在第一側向長度L1內,使得當液體層230抓住微型元件240時,前述部分的液體層230限制了微型元件240的位置。前述功效在當第二側向長度L2小於或等於約100微米的情況下較為顯著和實用。在巨觀情況下,例如當元件的側向長度大於或等於1毫米時,由於外緣和接觸部分面積之間的比例太小使液體層230無法抓住元件,液體層230變得無助於將元件牢固地貼附至目標墊。因此,前述由液體層230輔助的貼附在宏觀情況下起不了作用。
參考第5圖。第5圖繪示本揭露一些實施例中方法100的中間階段的剖面示意圖。在一些實施例中,在毛細力抓住微型元件240後蒸發液體層230,使得微型元件240的電極242黏附固定至導電墊220。換句話說,電極242貼附至導電墊220並與導電墊220電性接觸。
在一些實施例中,液體層230首先形成於基板210上,接著微型元件240放置在導電墊220的上方並由液體層230抓住微型元件240。在這之後,另一個液體層形成於基板210上,接著蒸發液體層230和前述另一個液體層的液體,從而相較於單一液體層230的實施例更加穩固和精確地將微型元件240貼附至導電墊220上。
參考第6A圖和第6C圖。第6A圖至第6C圖繪示本揭露一些實施例中貼附複數個微型元件240的方法100的中間階段的剖面示意圖。第6A圖至第6C圖可視為貼附複數個微型
元件240至導電墊220的完整實施例。第6A圖至第6C圖所描述的實施例以噴灑方式為示例,但不以此為限。冷卻裝置LT用以降底基板210和導電墊220的溫度(參考第6A圖)。冷卻裝置LT可以是冷卻板,但不以此為限。在其他實際應用中,冷卻裝置LT亦可由加熱裝置所替換。在一些實施例中,噴灑氣體250於導電墊220和基板210上以形成液體層230(參考第6B圖),微型元件240將放置於其上。在這之後,複數個微型元件240放置於導電墊220之上並且接觸液體層230(參考第6C圖)。
參考第7A圖和第7B圖。第7A圖和第7B圖繪示本揭露一些實施例中微型元件240在導電墊220上的剖面示意圖。在一些實施例中,導電墊220和微型元件240的電極242當中的至少一個包含黏合材料。詳細而言,在如圖7A所描述的一些實施例中,微型元件240的電極242包含金屬電極2422和黏合材料2424,黏合材料2424在金屬電極2422上。在電極242貼附至導電墊220且與導電墊220電性接觸之後,呈現黏合材料2424接觸導電墊220的結構。在圖7B所描繪的一些實施例中,導電墊220包含金屬墊222和黏合材料224。金屬墊222設置在基板210上。黏合材料224設置在金屬墊222上。黏合材料224與電極242接觸。黏合材料2424和黏合材料224當中的至少一個包含焊料材料,例如錫(tin,Sn)、銦(indium,In)或其組合,但不以此為限。金屬電極2422和金屬墊222當中的至少一個包含銅(copper,Cu)、鈦(titanium,Ti)或其組合。注意,在這些實施例中電極242貼附至導電墊220,電
極242和導電墊220在貼附時的溫度低於黏合材料2424和黏合材料224的熔點。
參考第8圖。第8圖繪示本揭露一些實施例中微型元件240在導電墊220上的剖面示意圖。在一些實施例中,於液體層230蒸發後,導電墊220的溫度進一步升高至高於黏合材料224(或是其它實施例中的黏合材料2424)的熔點。第8圖顯示在升高前述溫度至高於前述熔點後所得到的結構。在一些實施例中,於液體層230蒸發後,導電墊220的溫度近一步升高至低於黏合材料224(或黏合材料2424)的熔點。前述“低於”意指低於熔點的溫度點但足以在黏合材料224和電極242之間(或黏合材料2424和導電墊220之間)產生間隙擴散,使得微型元件240黏合至導電墊220並與導電墊220電性接觸。在這類情況下,由於溫度較低,可更好地保護微型元件240。除此之外,由於沒有“熔化”,更增加了微型元件240在導電墊220上的位置精確度。
參考第9圖。第9圖繪示本揭露一些實施例中微型元件240在導電墊220上的剖面示意圖。在一些實施例中,於液體層230蒸發後,導電墊220的溫度進一步升高至高於導電墊220和微型元件240的電極242的共晶點。第9圖顯示在升高前述溫度至高於前述共晶點後所得到的結構。
參考第10A圖和第10B圖。第10A圖繪示本揭露一些實施例中微型元件240在導電墊220上的剖面示意圖。第10B圖為第10A圖所描述的實施例中微型元件240在導電墊220上的上視示意圖。圖10A和圖10B所描述的實施例與第4A
圖和第4B圖所描述的實施例的不同點在於,在第4A圖和第4B圖中,第一側向長度L1稍微大於第二側向長度L2,而在圖10A和圖10B中,第二側向長度L2稍微大於第一側向長度L1。應當注意,這兩個情況中都符合第一側向長度L1小於或等於兩倍的第二側向長度L2的條件和第一側向長度L1大於或等於三分至二的第二側向長度L2的條件。
綜上所述,本揭露的實施例提供一種限制微型元件於導電墊上的方法。其揭露了微型元件的側向長度和導電墊的側向長度之間的長度關係以改善當微型元件的側向長度小於或等於約100微米時,貼附微型元件至導電墊的製程過程位置的精確度。
以上所述,僅是本揭露的較佳實施例而已,並非對本揭露作任何形式上的限制,雖然本揭露已以較佳實施例揭露如上,然而並非用以限定本揭露,任何熟悉本專業的技術人員,在不脫離本揭露技術方案範圍內,當可利用上述揭示的技術內容作出些許更動或修飾為等同變化的等效實施例,但凡是未脫離本揭露技術方案的內容,依據本揭露的技術實質對以上實施例所作的任何簡單修改、等同變化與修飾,均仍屬於本揭露技術方案的範圍內。
130‧‧‧操作
210‧‧‧基板
220‧‧‧導電墊
L1‧‧‧第一側向長度
L2‧‧‧第二側向長度
Claims (10)
- 一種限制微型元件於導電墊上的方法,包含:形成一導電墊於基板上,該導電墊具有一第一側向長度;形成一液體層於該導電墊上,包含:在包含一蒸氣的環境中調節該導電墊的溫度至一選定溫度點,使得一部分該蒸氣凝結並在該導電墊上形成該液體層,或局部地噴灑一氣體至該導電墊和一部分的該基板上,使得一部分該氣體凝結並在該導電墊上形成該液體層,其中該氣體的水蒸氣壓高於環境水蒸氣壓;以及放置具有一第二側向長度的一微型元件於該導電墊的上方,使得該微型元件接觸該液體層,並由位於該微型元件和該導電墊之間的該液體層所產生的一毛細力抓住該微型元件,該微型元件包含一電極,該電極面向該導電墊,其中該第一側向長度小於或等於兩倍的該第二側向長度。
- 如請求項1所述的方法,其中該選定溫度點為露點。
- 如請求項1所述的方法,更包含:蒸發該液體層,使得該微型元件的該電極貼附至該導電墊並與該導電墊電性接觸。
- 如請求項3所述的方法,其中該導電墊和該 電極當中至少一者包含黏合材料,且該方法更包含:在蒸發該液體層後,升高該導電墊的溫度至高於該黏合材料的熔點。
- 如請求項1所述的方法,其中該導電墊和該電極當中至少一者包含黏合材料,且該方法更包含:在蒸發該液體層後,升高該導電墊的溫度至低於該黏合材料的熔點。
- 如請求項3所述的方法,更包含:在蒸發該液體層後,升高該導電墊的溫度至高於該導電墊和該電極的共晶點。
- 如請求項1所述的方法,其中該導電墊和該微型元件的該電極當中的至少一個包含黏合材料。
- 如請求項1所述的方法,其中當該毛細力抓住該微型元件時,該液體層的厚度小於該微型元件的厚度。
- 如請求項1所述的方法,其中該第一側向長度大於或等於該第二側向長度的三分之二。
- 如請求項1所述的方法,其中該液體層為水。
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US10986737B2 (en) | 2021-04-20 |
US20200315029A1 (en) | 2020-10-01 |
CN111755347A (zh) | 2020-10-09 |
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