TWI717941B - 轉移微型元件的方法 - Google Patents

轉移微型元件的方法 Download PDF

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TWI717941B
TWI717941B TW108146278A TW108146278A TWI717941B TW I717941 B TWI717941 B TW I717941B TW 108146278 A TW108146278 A TW 108146278A TW 108146278 A TW108146278 A TW 108146278A TW I717941 B TWI717941 B TW I717941B
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陳立宜
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薩摩亞商美科米尚技術有限公司
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Abstract

一種轉移微型元件的方法，包含：準備轉移板，轉移板具有微型元件於其上，其中微型元件接觸轉移板的拾取表面；形成包含微型元件、接收基板的接觸墊和位於微型元件和接觸墊之間的一些水的結構，水的兩個相反的表面分別接觸微型元件和接觸墊的貼附表面，接觸墊面對轉移板的貼附表面之親水性大於轉移板面對接收基板的拾取表面之親水性；以及蒸發水，使得微型元件貼附至接觸墊並與接觸墊接觸。

Description

轉移微型元件的方法
本揭露是關於轉移微型元件的方法。
此處的陳述僅提供與本揭露有關的背景信息，而不必然地構成現有技術。
轉移元件的傳統技術包含藉由晶圓黏合(wafer bonding)從轉移晶圓轉移到接收基板。這類實施方式的一種為「直接黏合(direct bonding)」，其涉及單一黏合步驟將元件陣列從轉移晶圓轉移到接收基板，接著移除轉移晶圓。另一種的這類實施方式為「間接黏合(indirect bonding)」，其涉及兩個黏合/剝離步驟。在間接黏合中，轉移頭可以從供應基板拾取元件陣列，然後將元件陣列黏合到接收基板，接著移除轉移頭。
近年來，許多研究人員和專家嘗試克服困難，欲使得元件巨量轉移(亦即，轉移百萬或千萬數量級的元件)在商業應用中成為可能的技術。巨量轉移技術的困難點中，降低成本、時間效率和良率是其中三個重要議題。
本揭露的一些實施方式公開了一種轉移微型元件的方法，包含：準備轉移板，轉移板具有微型元件於其上，其中微型元件接觸轉移板的拾取表面；形成包含微型元件、接收基板的接觸墊和位於微型元件和接觸墊之間的一些水的結構，水的兩個相反的表面分別接觸微型元件和接觸墊的貼附表面，接觸墊面對轉移板的貼附表面之親水性大於轉移板面對接收基板的拾取表面之親水性；以及蒸發水，使得微型元件貼附至接觸墊並與接觸墊接觸。
為了讓本揭露的上述特徵和優點能更明顯易懂，下文特舉實施例，並配合所附圖式作詳細說明如下。
100‧‧‧轉移微型元件的方法
110、120、130‧‧‧操作
210‧‧‧微型元件
212‧‧‧電極
214‧‧‧第一型半導體層
216‧‧‧主動層
218‧‧‧第二型半導體層
2122、2422‧‧‧表面
220、260‧‧‧水
230‧‧‧轉移板
232‧‧‧拾取表面
240‧‧‧接收基板
242‧‧‧接觸墊
250、250’‧‧‧蒸氣
L‧‧‧側向長度
S‧‧‧結構
A1‧‧‧面積
P‧‧‧外部壓力
當結合隨附圖式閱讀時，自以下詳細描述將最佳地理解本揭露之態樣。應注意，根據工業中之標準實務，各特徵未必依比例繪示。實際上，可出於論述清晰之目的而增減所說明的特徵之尺寸。
第1圖繪示本揭露一些實施例中轉移微型元件的方法的流程圖。
第2A圖繪示本揭露一些實施例中第1圖所描述的方法的中間階段的剖面示意圖。
第2B圖繪示本揭露一些實施例中第1圖所描述的方法的中間階段的剖面示意圖。
第2C圖繪示本揭露一些實施例中第1圖所描述的方法的 中間階段的剖面示意圖。
第2C’圖繪示本揭露一些實施例中第1圖所描述的方法的中間階段的剖面示意圖。
第2D圖繪示本揭露一些實施例中第1圖所描述的方法的中間階段的剖面示意圖。
第3圖繪示本揭露一些實施例中第1圖所描述的方法的可選中間階段的剖面示意圖。
第4圖繪示本揭露一些實施例中第1圖所描述的方法的可選中間階段的剖面示意圖。
第5圖繪示本揭露一些實施例中第1圖所描述的方法的可選中間階段的剖面示意圖。
第6圖繪示本揭露一些實施例中第1圖所描述的方法的可選中間階段的剖面示意圖。
第7圖繪示本揭露一些實施例中微型元件的剖面示意圖。
第8圖繪示本揭露一些實施例中第1圖所描述的方法的可選中間階段的剖面示意圖。
為更進一步闡述本揭露為達成預定發明目的所採取的技術手段及功效，以下結合圖式及較佳實施例，對依據本揭露提出的轉移微型元件的方法，其具體實施方式、結構、方法、步驟、特徵及其功效，詳細說明如後。
有關本揭露的前述及其他技術內容、特點及功效，在以下配合參考圖式的較佳實施例的詳細說明中將可清楚 呈現。通過具體實施方式的說明，當可對本揭露為達成預定目的所採取的技術手段及功效更加深入且具體的瞭解，然而所附圖式僅是提供參考與說明之用，並非用來對本揭露加以限制。
為簡化圖式，一些現有已知慣用的結構與元件在圖式中將以簡單示意的方式繪示。並且，除非有其他表示，在不同圖式中相同的元件符號可視為相對應的元件。這些圖式的繪示是為了清楚表達這些實施方式中各元件之間的連接關係，並非繪示各元件的實際尺寸。
參考第1圖和第2A圖至第2C’圖。第1圖繪示本揭露一些實施例中轉移微型元件210的方法100的流程圖。第2A圖至第2C’圖繪示本揭露一些實施例中第1圖所描述的方法100的中間階段的剖面示意圖。第2D圖繪示本揭露一些實施例中第1圖所描述的方法100的中間階段的剖面示意圖。方法100從操作110開始，準備轉移板230，轉移板230具有微型元件210於其上，其中微型元件210接觸轉移板230的拾取表面232(參考第2A圖)。方法100接著進行操作120，形成包含微型元件210、接收基板240的接觸墊242和位於微型元件210和接觸墊242之間的一些水220的結構S，水220的兩個相反的表面分別接觸微型元件210和接觸墊242的貼附表面2422(參考第2B圖)。方法100接著進行操作130，蒸發水220以使得微型元件210貼附至接觸墊242並與接觸墊242接觸(參考第2C圖和第2D圖)。在一些實施例中，在蒸發水220之後(參考第2C圖)將微型元件210從轉移板230脫離(參考第2D圖)。在一些實施例中，在蒸發水220之前將微型元件210從轉移板230脫離 (參考第2C’圖和第2D圖)。簡而言之，在一些實施例中，操作的順序可以是從第2A圖至第2B圖，接著至第2C圖，然後至第2D圖。在一些其它實施例中，操作的順序可以是從第2A圖至第2B圖，接著至第2C’圖，然後至第2D圖。
雖然在前一段落僅提及“一個”微型元件210，“多個”微型元件210是可以用於實際應用中的，並仍在本揭露的範圍內，且不會在本揭露中特別強調。
參考第2B圖和第3圖至第6圖。第3圖至第6圖繪示本揭露一些實施例中方法100的可選中間階段的剖面示意圖。第3圖至第6圖所分別描述的實施例可以獨立地執行或組合式地執行。在一些實施例中，在包含蒸氣的環境中降低轉移板230的溫度，使得至少一部分的蒸氣凝結以在微型元件210上形成水220(參考第3圖)，接著放置微型元件210至接收基板240的上方，使得水220位於微型元件210和接收基板240的接觸墊242之間。在一些實施例中，水220是於溫度約在露點時形成的。
在一些實施例中，噴灑蒸氣250至微型元件210上，使得至少一部分的蒸氣250凝結以形成水220(參考第4圖)。在一些實施例中，水220亦允許形成在轉移板230上。在一些實施例中，蒸氣250的水蒸氣壓高於環境水蒸氣壓。藉由上述條件，當執行噴灑時，蒸氣250更有可能凝結在微型元件210上。在一些實施例中，蒸氣250主要包含氮和水。
在一些實施例中，於放置微型元件210前形成一些水260在接收基板240的接觸墊242上(參考第5圖)。雖然 水260如第5圖所示為連續地分佈並覆蓋接收基板240和接觸墊242，水260亦可不連續地分佈在接收基板240上。例如，覆蓋接觸墊242之島狀的水(圖中未示)。在一些實施例中，在包含蒸氣的環境中降低接收基板240的溫度(圖中未示)，使得至少一部分的蒸氣凝結以形成水260。在一些實施例中，噴灑蒸氣250’至接觸墊242上，使得至少一部分的蒸氣250’凝結以形成水260(參考第6圖)。在一些實施例中，水260亦允許形成在接收基板240上。在一些實施例中，蒸氣250’的水蒸氣壓高於環境水蒸氣壓。藉由上述條件，當執行噴灑時，蒸氣250’更有可能凝結在接觸墊242上。在一些實施例中，蒸氣250’主要包含氮和水。在一些其它實施例中，微型元件210可放置在接觸墊242上並與接觸墊242接觸，接著形成水260，且水260滲透進入微型元件210和接觸墊242之間的空間。
在一些實施例中，接觸墊242是導電的。在一些實施例中，接觸墊242包含銅和富含銅之材料的其中之一。富含銅之材料為銅佔原子總數一半以上的材料。在一些實施例中，接觸墊242包含黏合材料。黏合材料包含鈦(titanium，Ti)、錫(tin，Sn)或銦(indium，In)，或者其組合。鈦、錫和銦的其中一者佔黏合材料的原子總數一半以上。在一些實施例中，微型元件210的側向長度L小於或等於約100微米。
在一些實施例中，微型元件210藉由轉移板230並經由機械力(例如，黏著力)或電磁力(例如，靜電力或藉由雙極電極之交流電壓增加的靜電力)來放置，但不以此為限。在水220(260)與接觸墊242和微型元件210皆接觸後， 微型元件210和接觸墊242由水220(260)的相反兩面所產生的毛細力抓在一起。在一些實施例中，位於微型元件210和接觸墊242之間的水220(260)的厚度小於微型元件210的厚度，使其可以更精準地控制(維持)水220(260)蒸發後微型元件210和接觸墊242之間的相對位置。在一些實施例中，使用約為水220(260)之沸點的溫度來蒸發水220(260)。
參考第2C圖、第2C’圖和第2D圖。在蒸發水220(260)後，微型元件210黏附固定至接收基板240。在一些實施例中，降低接收基板240的溫度，使得使水220(260)在微型元件210從轉移板230脫離前凍住。凍住的水220(260)提供抓住微型元件210的力，轉移板230接著從微型元件210脫離(例如，參考第2C’圖)。應注意，接觸墊242面對轉移板230的貼附表面2422之親水性大於轉移板230面對接收基板240的拾取表面232的親水性。由於一些水蒸氣(或水)可存在於拾取表面232和微型元件210之間，上述關於親水性的條件可輔助微型元件210從轉移板230脫離並將微型元件210黏附固定至接觸墊242。詳細而言，存在於拾取表面232和微型元件210之間的水蒸氣(或水)可以是來自空氣中的濕氣或者水220的滲透。因此，接觸墊242的貼附表面2422和水220(260)之間的拉力大於轉移板230的拾取表面232和存在於拾取表面232和微型元件210之間的水蒸氣(或水)之間的拉力，從而藉由前述親水性的條件幫助微型元件210從轉移板230轉移至接收基板240。
參考第7圖。第7圖繪示本揭露一些實施例中微型 元件210的剖面示意圖。在一些實施例中，微型元件210包含電極212於其上，在水220(260)蒸發後，微型元件210經由電極212貼附至接觸墊242並與接觸墊242接觸。在一些實施例中，微型元件210包含第一型半導體層214、主動層216和第二型半導體層218。主動層216在第一型半導體層214上，第二型半導體層218在主動層216上。第一型半導體層214可以是p型半導體層，第二型半導體層218可以是n型半導體層，但不以此為限。
在一些實施例中，進一步加熱微型元件210和接收基板240的組合以產生黏合力以在蒸發水220之後和在微型元件210從轉移板230脫離之前將微型元件210和接觸墊242黏合在一起。由於黏合力一般而言比前述由水220(260)輔助的貼附(力)要強，微型元件210可以在微型元件210和接觸墊242之間的相對位置在可控範圍內之後更堅固地黏附固定至接觸墊242。在一些實施例中，在蒸發水220(260)後，進一步增加接觸墊242的溫度至高於水220的沸點且低於接觸墊242和電極212之間的共晶點。詳細而言，前述“低於”意指低於共晶點但仍足以引發接觸墊242和電極212之間固相擴散的溫度點，其使得微型元件210“黏合”至接觸墊242以增強電極212和接觸墊242之間的堅固程度。在這樣的實施例中，由於較低溫度的黏合製程，可更佳地保護微型元件210(亦即，保護微型元件210免於在黏合製程期間有所損壞)。
在一些實施例中，在蒸發水220(260)後進一步增加接觸墊242的溫度至高於接觸墊242和電極212之間的共 晶點。在一些實施例中，接觸墊242的溫度增加至一溫度點，使其發生固相擴散以將電極212黏合至接觸墊242。在一些實施例中，電極212的厚度範圍從約0.2微米至約2微米以滿足固相擴散發生的準則和縮減微型元件210尺寸的趨勢之間的平衡。在一些實施例中，電極212包含黏合材料。黏合材料包含錫、銦、鈦以及前述元素之組合當中的一個。錫、銦、鈦當中的一者佔黏合材料的原子總數一半以上。在一些實施例中，電極212包含銅和富含銅之材料的其中之一。富含銅之材料為銅佔原子總數一半以上的材料。
在一些實施例中，電極212和接觸墊242之間的接觸面積A1小於或等於約1平方毫米(square millimeter，mm2)。上述接觸面積A1尺寸的限制是用來幫助毛細力將電極212面向接觸墊242的表面2122和接觸墊242面向電極212的貼附表面2422拉在一起(參考第2B圖)，並且在蒸發水220後輔助形成固相黏合。
貼附後的電極212和接觸墊242之間的結構整體性(堅固程度)足夠強以保持微型元件210的位置並在電極212和接觸墊242之間形成接觸。應注意，“水220(260)輔助黏合”在微型元件210的側向長度L小於或等於約100微米時較為有效，原因在於較小的微型元件210側向長度L導致接觸區域的外緣長度和接觸區域的面積(亦即，接觸面積A1)之間有較高的比例，助長了毛細力的影響，並因此形成貼附。而且，上述微型元件210的接觸面積A1優選為小於或等於約1平方毫米。如果接觸面積A1太大，毛細力的影響將會太小而無法將 電極212的表面2122和接觸墊242的貼附表面2422拉在一起至足以在蒸發水220後輔助形成固相黏合的程度。鑒於前面的解釋，在一些輔助實施例中，電極212可以是圖案化電極，其包含至少兩個隔離部分，隔離部分彼此隔離，從而增加了接觸區域的外緣長度和接觸區域的面積之間的比例。
參考第8圖。第8圖繪示本揭露一些實施例中方法100的可選中間階段的剖面示意圖。在一些實施例中，施加外部壓力P以在蒸發水220(260)期間壓緊微型元件210和接觸墊242，以更進一步輔助電極212與接觸墊242接觸，以在兩者間發生更好的固相黏合。施加在微型元件210上的外部壓力P可以是藉由將轉移板230壓向微型元件210的方式(例如，放置物體)產生。在一些實施例中，前述放置的物體為附加的板子，其尺寸(例如，面積)等於或大於轉移板230的尺寸(例如，面積)。和具有隨機形狀和尺寸的物體相比，上述附加的板子可在微型元件210上產生更均勻的外部壓力P。在一些實施例中，施加在微型元件210上的外部壓力P可以是藉由改變環境壓力以壓緊微型元件210和接觸墊242的方式產生，但不以此為限。
綜上所述，本揭露的實施例提供轉移微型元件的方法。接觸墊面對轉移板的貼附表面之親水性大於轉移板面對接收基板的拾取表面之親水性，從而輔助微型元件從轉移板脫離並將微型元件黏附固定至接收基板的接觸墊。
以上所述，僅是本揭露的較佳實施例而已，並非對本揭露作任何形式上的限制，雖然本揭露已以較佳實施例揭 露如上，然而並非用以限定本揭露，任何熟悉本專業的技術人員，在不脫離本揭露技術方案範圍內，當可利用上述揭示的技術內容作出些許更動或修飾為等同變化的等效實施例，但凡是未脫離本揭露技術方案的內容，依據本揭露的技術實質對以上實施例所作的任何簡單修改、等同變化與修飾，均仍屬於本揭露技術方案的範圍內。
120‧‧‧操作
210‧‧‧微型元件
2122、2422‧‧‧表面
220、260‧‧‧水
230‧‧‧轉移板
232‧‧‧拾取表面
240‧‧‧接收基板
242‧‧‧接觸墊
L‧‧‧側向長度
S‧‧‧結構

Claims (15)

  1. 一種轉移微型元件的方法，包含：準備一轉移板，該轉移板具有一微型元件於其上，其中該微型元件接觸該轉移板的一拾取表面；形成包含該微型元件、一接收基板的一接觸墊和位於該微型元件和該接觸墊之間的一些水的一結構，該些水的兩個相反的表面分別接觸該微型元件和該接觸墊的一貼附表面，且該微型元件的兩個相反的表面分別接觸該拾取表面和該些水，其中該接觸墊面對該轉移板的該貼附表面之親水性大於該轉移板面對該接收基板的該拾取表面之親水性；以及蒸發該些水，使得該微型元件貼附至該接觸墊並與該接觸墊接觸。
  2. 如請求項1所述的方法，其中形成該結構包含：形成該些水在該微型元件和該接觸墊當中的至少一者上；以及放置該微型元件至該接收基板的上方，使得該些水位於該微型元件和該接收基板的該接觸墊之間。
  3. 如請求項2所述的方法，其中形成該些水包含：噴灑一些蒸氣至該微型元件和該接觸墊的至少一者上，使得至少一部分的該些蒸氣凝結以形成該些水。
  4. 如請求項3所述的方法，其中該些蒸氣的水蒸氣壓高於環境水蒸氣壓。
  5. 如請求項3所述的方法，其中該些蒸氣主要包含氮和水。
  6. 如請求項2所述的方法，其中該些水是於溫度約在露點時形成的。
  7. 如請求項2所述的方法，其中形成該些水包含：在包含一些蒸氣的環境中降低該轉移板的溫度，使得至少一部分的該些蒸氣凝結以形成該些水。
  8. 如請求項1所述的方法，更包含：施加一外部壓力以在蒸發該些水的期間壓緊該微型元件和該接觸墊。
  9. 如請求項1所述的方法，更包含：在蒸發該些水之前將該微型元件從該轉移板脫離，該微型元件黏附固定至該接收基板。
  10. 如請求項9所述的方法，更包含： 降低該接收基板的溫度，使得在該微型元件脫離該轉移板之前凍住該些水。
  11. 如請求項1所述的方法，更包含：在蒸發該些水之後將該微型元件從該轉移板脫離，該微型元件黏附固定至該接收基板。
  12. 如請求項11所述的方法，更包含：加熱該微型元件和該接收基板的組合以在該微型元件脫離該轉移板之前產生一黏合力將該微型元件和該接觸墊黏合在一起。
  13. 如請求項1所述的方法，其中該微型元件的側向長度小於或等於約100微米。
  14. 如請求項1所述的方法，其中該微型元件包含一電極於其上，且該微型元件經由該電極貼附並與該接觸墊接觸，該電極和該接觸墊之間的接觸面積小於或等於約1平方毫米。
  15. 如請求項14所述的方法，更包含：在蒸發該些水後升高該接觸墊的溫度至高於該些水的沸點和低於該接觸墊和該電極之間的共晶點。
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