CN111769052A - 液体辅助微型冷贴附方法 - Google Patents

液体辅助微型冷贴附方法 Download PDF

Info

Publication number
CN111769052A
CN111769052A CN201911013660.2A CN201911013660A CN111769052A CN 111769052 A CN111769052 A CN 111769052A CN 201911013660 A CN201911013660 A CN 201911013660A CN 111769052 A CN111769052 A CN 111769052A
Authority
CN
China
Prior art keywords
conductive pad
liquid layer
electrode
microelement
liquid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
CN201911013660.2A
Other languages
English (en)
Inventor
陈立宜
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mikro Mesa Technology Co Ltd
Original Assignee
Mikro Mesa Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mikro Mesa Technology Co Ltd filed Critical Mikro Mesa Technology Co Ltd
Publication of CN111769052A publication Critical patent/CN111769052A/zh
Withdrawn legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/89—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using at least one connector not provided for in any of the groups H01L24/81 - H01L24/86
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67144—Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
    • H01L21/4853—Connection or disconnection of other leads to or from a metallisation, e.g. pins, wires, bumps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0215—Bonding to the substrate
    • H01S5/0216—Bonding to the substrate using an intermediate compound, e.g. a glue or solder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers
    • H01S5/423—Arrays of surface emitting lasers having a vertical cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/0401—Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04026—Bonding areas specifically adapted for layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05601—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/05609—Indium [In] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/07—Structure, shape, material or disposition of the bonding areas after the connecting process
    • H01L2224/08—Structure, shape, material or disposition of the bonding areas after the connecting process of an individual bonding area
    • H01L2224/081—Disposition
    • H01L2224/0812—Disposition the bonding area connecting directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
    • H01L2224/08151—Disposition the bonding area connecting directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding the bonding area connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/08221—Disposition the bonding area connecting directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding the bonding area connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/08225—Disposition the bonding area connecting directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding the bonding area connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/13109—Indium [In] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/16227—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/29109—Indium [In] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/32227—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the layer connector connecting to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/757—Means for aligning
    • H01L2224/75702—Means for aligning in the upper part of the bonding apparatus, e.g. in the bonding head
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/757—Means for aligning
    • H01L2224/75723—Electrostatic holding means
    • H01L2224/75725—Electrostatic holding means in the upper part of the bonding apparatus, e.g. in the bonding head
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/757—Means for aligning
    • H01L2224/75733—Magnetic holding means
    • H01L2224/75735—Magnetic holding means in the upper part of the bonding apparatus, e.g. in the bonding head
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/757—Means for aligning
    • H01L2224/75743—Suction holding means
    • H01L2224/75745—Suction holding means in the upper part of the bonding apparatus, e.g. in the bonding head
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/80001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by connecting a bonding area directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
    • H01L2224/80003—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by connecting a bonding area directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding involving a temporary auxiliary member not forming part of the bonding apparatus
    • H01L2224/80004—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by connecting a bonding area directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding involving a temporary auxiliary member not forming part of the bonding apparatus being a removable or sacrificial coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/80001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by connecting a bonding area directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
    • H01L2224/80009—Pre-treatment of the bonding area
    • H01L2224/80048—Thermal treatments, e.g. annealing, controlled pre-heating or pre-cooling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/80001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by connecting a bonding area directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
    • H01L2224/80053—Bonding environment
    • H01L2224/8009—Vacuum
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/80001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by connecting a bonding area directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
    • H01L2224/8019—Arrangement of the bonding areas prior to mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/80001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by connecting a bonding area directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
    • H01L2224/802—Applying energy for connecting
    • H01L2224/80201—Compression bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/80001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by connecting a bonding area directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
    • H01L2224/802—Applying energy for connecting
    • H01L2224/80201—Compression bonding
    • H01L2224/80203—Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
    • H01L2224/80204—Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding with a graded temperature profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/80001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by connecting a bonding area directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
    • H01L2224/8038—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/80399—Material
    • H01L2224/804—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/80401—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/80409—Indium [In] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/80001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by connecting a bonding area directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
    • H01L2224/8038—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/80399—Material
    • H01L2224/80494—Material with a principal constituent of the material being a liquid not provided for in groups H01L2224/804 - H01L2224/80491
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/80001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by connecting a bonding area directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
    • H01L2224/808—Bonding techniques
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/80001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by connecting a bonding area directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
    • H01L2224/808—Bonding techniques
    • H01L2224/80801—Soldering or alloying
    • H01L2224/8082—Diffusion bonding
    • H01L2224/8083—Solid-solid interdiffusion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/80001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by connecting a bonding area directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
    • H01L2224/80905—Combinations of bonding methods provided for in at least two different groups from H01L2224/808 - H01L2224/80904
    • H01L2224/80907—Intermediate bonding, i.e. intermediate bonding step for temporarily bonding the semiconductor or solid-state body, followed by at least a further bonding step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/80001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by connecting a bonding area directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
    • H01L2224/80909—Post-treatment of the bonding area
    • H01L2224/80948—Thermal treatments, e.g. annealing, controlled cooling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/81001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector involving a temporary auxiliary member not forming part of the bonding apparatus
    • H01L2224/81002—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector involving a temporary auxiliary member not forming part of the bonding apparatus being a removable or sacrificial coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/81053—Bonding environment
    • H01L2224/8109—Vacuum
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/8119—Arrangement of the bump connectors prior to mounting
    • H01L2224/81192—Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/8119—Arrangement of the bump connectors prior to mounting
    • H01L2224/81193—Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed on both the semiconductor or solid-state body and another item or body to be connected to the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/812—Applying energy for connecting
    • H01L2224/81201—Compression bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/812—Applying energy for connecting
    • H01L2224/81201—Compression bonding
    • H01L2224/81203—Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
    • H01L2224/81204—Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding with a graded temperature profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/8138—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/81399—Material
    • H01L2224/814—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/81401—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/81409—Indium [In] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/818—Bonding techniques
    • H01L2224/81801—Soldering or alloying
    • H01L2224/8182—Diffusion bonding
    • H01L2224/8183—Solid-solid interdiffusion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/81905—Combinations of bonding methods provided for in at least two different groups from H01L2224/818 - H01L2224/81904
    • H01L2224/81907—Intermediate bonding, i.e. intermediate bonding step for temporarily bonding the semiconductor or solid-state body, followed by at least a further bonding step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/81909—Post-treatment of the bump connector or bonding area
    • H01L2224/81948—Thermal treatments, e.g. annealing, controlled cooling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/83001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector involving a temporary auxiliary member not forming part of the bonding apparatus
    • H01L2224/83002—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector involving a temporary auxiliary member not forming part of the bonding apparatus being a removable or sacrificial coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/83053—Bonding environment
    • H01L2224/8309—Vacuum
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83193—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed on both the semiconductor or solid-state body and another item or body to be connected to the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/832—Applying energy for connecting
    • H01L2224/83201—Compression bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/832—Applying energy for connecting
    • H01L2224/83201—Compression bonding
    • H01L2224/83203—Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
    • H01L2224/83204—Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding with a graded temperature profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/83399—Material
    • H01L2224/834—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/83401—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/83409—Indium [In] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/83801—Soldering or alloying
    • H01L2224/8382—Diffusion bonding
    • H01L2224/8383—Solid-solid interdiffusion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/83905—Combinations of bonding methods provided for in at least two different groups from H01L2224/838 - H01L2224/83904
    • H01L2224/83907—Intermediate bonding, i.e. intermediate bonding step for temporarily bonding the semiconductor or solid-state body, followed by at least a further bonding step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/83909—Post-treatment of the layer connector or bonding area
    • H01L2224/83948—Thermal treatments, e.g. annealing, controlled cooling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/07—Structure, shape, material or disposition of the bonding areas after the connecting process
    • H01L24/08—Structure, shape, material or disposition of the bonding areas after the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/75—Apparatus for connecting with bump connectors or layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)

Abstract

本发明公开了一种液体辅助微型冷贴附方法。该方法包括：在基板上形成导电垫，其中导电垫基本上由铟组成；在导电垫上形成液体层；将具有面对导电垫的电极的微型元件放置在导电垫上，使微型元件与液体层接触并且被微型元件与导电垫之间的液体层产生的毛细力抓住，其中电极基本上由铟组成；以及蒸发液体层，使电极贴附至导电垫并且与导电垫电性接触。本发明的方法导入铟作为电极与导电垫之间的界面材料，液体层辅助贴附可以更强，而有利于贴附后的各种制程。

Description

液体辅助微型冷贴附方法
技术领域
本发明涉及微型元件的贴附方法，特别是涉及一种液体辅助微型冷贴附方法。
背景技术
近年来，微型元件在各种应用中变得普及。在微型元件的所有技术方面，转移过程是微型元件商业化的最具挑战性的任务之一。转移过程的其中一重要议题是黏合微型元件到基板上。
发明内容
本发明的目的在于克服现有技术的缺陷，而提出一种液体辅助微型冷贴附的方法，将铟作为电极与导电垫之间的界面材料，使得液体层辅助贴附可以更强，而有利于贴附后的各种制程。
本发明的目的及解决其技术问题是采用以下技术方案来实现的。
根据本发明的一些实施例，提供一种液体辅助微型冷贴附的方法。该方法包括：在基板上形成导电垫，其中导电垫由铟组成；在导电垫上形成液体层；将具有面对导电垫的电极的微型元件放置在导电垫上，使微型元件与液体层接触并且被微型元件与导电垫之间的液体层产生的毛细力抓住，其中电极由铟组成；以及蒸发液体层，使电极贴附至导电垫并且与导电垫电性接触。
根据本发明的一实施例，液体辅助微型冷贴附的方法还包括调整在包括蒸气的环境中的导电垫的温度至选定温度点，使蒸气的一部分凝结，以在导电垫上形成液体层。
根据本发明的一实施例，选定温度点为露点。
根据本发明的一实施例，液体辅助微型冷贴附的方法还包括在导电垫及基板上喷洒气体，使气体的至少一部分凝结，以在导电垫及基板上形成液体层。
根据本发明的一实施例，气体的水蒸气压高于环境水蒸气压。
根据本发明的一实施例，液体层包含水。
根据本发明的一实施例，液体辅助微型冷贴附的方法还包括在蒸发液体层之后，将导电垫的温度升高到低于铟的熔点。
根据本发明的一实施例，液体辅助微型冷贴附的方法还包括施加外部压力以压紧电极及导电垫，使电极黏合到导电垫。
根据本发明的一实施例，当微型元件被毛细力抓住时，电极与导电垫之间的液体层的前述部分的厚度小于微型元件的厚度。
根据本发明的一实施例，微型元件的侧向长度小于或等于100微米。
根据本发明的一些实施例，提供一种液体辅助微型冷贴附的方法。该方法包括：在基板上形成导电垫，其中导电垫由铟组成；将包括面对导电垫的电极的微型元件放置在导电垫上，使微型元件与导电垫接触，其中电极由铟组成；在放置之后，在微型元件及基板上形成液体层，使液体层的一部分渗入至微型元件与导电垫之间，并且微型元件被液体层的前述部分产生的毛细力抓住；以及蒸发液体层，使电极贴附至导电垫并且与导电垫电性接触。
根据本发明的一实施例，形成液体层还包括调整在包括蒸气的环境中的基板的温度至选定温度点，使蒸气的一部分凝结，以在基板上形成液体层。
根据本发明的一实施例，选定温度点为露点。
根据本发明的一实施例，形成液体层包括在微型元件及基板上喷洒气体，使气体的至少一部分凝结，以形成液体层于基板上并围绕微型元件。
根据本发明的一实施例，气体的水蒸气压高于环境水蒸气压。
根据本发明的一实施例，液体层包含水。
根据本发明的一实施例，液体辅助微型冷贴附的方法还包括在蒸发液体层之后，将导电垫的温度升高到低于铟的熔点。
根据本发明的一实施例，液体辅助微型冷贴附的方法还包括施加外部压力以压紧电极及导电垫，使电极黏合到导电垫。
根据本发明的一实施例，当微型元件被毛细力抓住时，电极与导电垫之间的液体层的前述部分的厚度小于微型元件的厚度。
根据本发明的一实施例，微型元件的侧向长度小于或等于100微米。
本发明内容与现有技术相比具有明显的优点和有益效果。借由上述技术方案，本发明的液体辅助微型冷贴附的方法导入铟作为电极与导电垫之间的界面材料，液体层辅助贴附可以更强，而有利于贴附后的各种制程。
上述说明仅是本发明技术方案的概述，为了能够更清楚了解本发明的技术手段，而可依照说明书的内容予以实施，并且为了让本发明的上述和其他目的、特征和优点能够更明显易懂，以下特举较佳实施例，并配合附图，详细说明如下。
附图说明
通过阅读以下对实施例的详细描述，参考如下附图，可以更全面地理解本发明：
图1为根据本发明的一些实施例的液体辅助微型冷贴附方法的流程图；
图2A为根据本发明的一实施例的方法的中间阶段的剖视示意图图；
图2B为根据本发明的一实施例的方法的中间阶段的剖视示意图；
图2C为根据本发明的一实施例的方法的中间阶段的剖视示意图；
图2D为根据本发明的一实施例的方法的中间阶段的剖视示意图；
图3A为根据本发明的一些实施例的方法的替代中间阶段的剖视示意图；
图3B为根据本发明的一些实施例的方法的替代中间阶段的剖视示意图；
图4为根据本发明的一些实施例的方法的可选中间阶段的剖视示意图；
图5为根据本发明的一些实施例的液体辅助微型冷贴附的另一种方法的流程图；
图6A为根据本发明的一实施例的另一种方法的中间阶段的剖视示意图；
图6B为根据本发明的一实施例的另一种方法的中间阶段的剖视示意图；
图6C为根据本发明的一实施例的另一种方法的中间阶段的剖视示意图；
图6D为根据本发明的一实施例的另一种方法的中间阶段的剖视示意图；
图6E为根据本发明的一实施例的另一种方法的中间阶段的剖视示意图；以及
图7为根据本发明的一些实施例的另一种方法的替代中间阶段的剖视示意图。
【主要元件符号说明】
100、300：方法
110、120、130、140、310、320、330、340：操作
210：基板
220：导电垫
230：液体层
230'：部分液体层
240：微型元件
242：电极
244：第一型半导体层
246：第二型半导体层
248：主动层
250：气体
260：液体层
260'：部分液体层
P：外部压力
Y、Z：方向
具体实施方式
现在将详细参考本发明的实施例，其示例在附图中示出。尽可能地在附图和说明书中使用相同的附图标记表示相同或相似的部分。
在各种实施例中，参考附图进行描述。然而某些实施例可以在没有这些具体细节中的一或多个的情况下实施，或者与其他已知方法和配置结合实施。在以下描述中，阐述了许多具体细节，例如具体配置、尺寸及制程等，以便透彻理解本发明。在其他情况下，没有特别详细描述公知的半导体制程及制造技术，以免不必要地模糊本发明。贯穿本说明书的「一实施例」的参照意味着结合该实施例描述的特定特征、结构、配置或特性被包括在本发明的至少一实施例中。因此贯穿本说明书的各个地方出现的用语「在一实施例中」不一定是指本发明的同一实施例。此外，特定特征、结构、配置或特性可在一或多个实施例中以任何合适的方式组合。
在此使用的用语「在...之上」、「至...」、「在...之间」及「在......上方」可以指一个层相对于其他层的相对位置。在另一层「之上」或「上方」或黏合「至」另一层的一层可直接与该另一层接触，或者可具有一或多个中间层。介于多层「之间」的一层可以直接与该多层接触，或者可具有一或多个中间层。
参考图1至图2D。图1为根据本发明的一些实施例的液体辅助微型冷贴附方法100的流程图。图2A至图2D为图1的方法的中间阶段的剖视示意图。该方法从操作110开始，其中导电垫220形成在基板210上(如图2A所示)。该方法继续进行操作120，其中在基板210的导电垫220上形成液体层230(如图2B所示)。该方法继续进行操作130，其中将包括面对导电垫220的电极242的微型元件240放置在导电垫220上，使微型元件240与液体层230接触(如图2C所示)。该方法继续进行操作140，其中液体层230被蒸发(如图2D所示)。
参考图2A，其中导电垫220形成在基板210上。导电垫220基本上由铟组成。在一些实施例中，导电垫220的厚度小于或等于2微米。在一些实施例中，导电垫220的厚度小于或等于0.5微米。
参考图2B，其中液体层230形成在基板210的导电垫220上。在一些实施例中，通过调整在包括蒸气的环境中的导电垫220或基板210的温度至选定温度点，使得蒸气的一部分凝结，以在导电垫220上形成液体层230，从而实现液体层230的形成。在一些实施例中，选定温度点为露点，使得环境中的水蒸气凝结形成液态水，即液体层230。在一些其他实施例中，也可通过气体喷洒、喷墨印刷、辊涂、浸涂等方法形成液体层230。
参考图2C，其中微型元件240被放置在导电垫220上，使得微型元件240与液体层230接触。液体层230的弯月面由毛细力所引起。微型元件240被微型元件240与导电垫220之间的液体层230产生的毛细力抓住。在一些实施例中，当微型元件240被毛细力抓住时，微型元件240与导电垫220之间的液体层230的厚度小于微型元件240的厚度。在一些实施例中，微型元件的侧向长度小于或等于约100微米。所述侧向长度是在方向Y上测量。方向Y垂直于厚度方向Z，而厚度方向Z垂直于基板210的平面延伸方向。在一些实施例中，自载体基板拾取微型元件240，然后通过转移头放置在导电垫220上。转移头可通过真空、黏着、磁性、静电吸引等方式在微型元件240上施加压力，以进行拾取。在一些实施例中，微型元件240为微型发光二极管(μLED)，但不应限于此。在一些实施例中，微型元件240主要包括面对导电垫220的电极242、第一型半导体层244以及通过主动层248与第一型半导体层244连接的第二型半导体层246。第一型半导体层244位于第二型半导体层246与电极242之间。在一些实施例中，电极242的厚度范围为约0.2微米至约10微米。
参考图2D，其中液体层230被蒸发，使得电极242贴附至导电垫220并且与导电垫220电性接触。在一些实施例中，通过升高导电垫220的温度实现液体层230的蒸发。在液体层230被蒸发之后，电极242黏附固定至导电垫220。具体而言，微型元件240的电极242贴附至导电垫220并与导电垫220电性接触。如此一来，微型元件240可保持在适当位置，而有利于进行后续制程(例如，黏合制程)。
除了液体层辅助贴附之外，电极242及导电垫220中使用的材料可以增强贴附的牢固性。具体而言，由于铟用于电极242及导电垫220中，并且电极242与导电垫220之间的界面的两侧由铟制成，当与所述液体层230结合进行形成及所述蒸发过程时，在使电极242与导电垫220接触之后，形成了微型冷贴附，这增强了液体层230在微型元件240与导电垫220之间辅助贴附的牢固性和可靠度。换句话说，导入铟作为电极242与导电垫220之间的界面材料，液体层230辅助贴附可以更强，而有利于贴附后的各种制程。值得注意的是，如果没有液体层230辅助贴附，仅仅通过两种相似金属并不容易形成微型冷贴附。「微型」意味着它对于侧向长度小于约100微米的微型元件240特别有用。当微型元件240的侧向长度太大时，液体层230的毛细力可能难以抓住微型元件240，因此增加了形成贴附及冷贴附的难度。
液体层230可通过不同方法形成。图3A及图3B为根据本发明的一些实施例的方法100的替代中间阶段的剖视示意图。在一些实施例中，如图3A及图3B所示，气体250局部地喷洒在基板210上，使得气体250的一部分凝结，以在基板210上形成液体层230。在一些实施例中，气体250被凝结，以在导电垫220上形成液体层230，如图3B所示。在一些实施例中，气体250的水蒸气压高于环境的水蒸气压，以便在喷洒后自发性地形成液体层230。在一些实施例中，气体250基本上由水和氮气组成，但不应完全排除其他化合物或元素。在最初喷洒的气体250的水蒸气压低于环境水蒸气压时，在将基板210的温度调整至露点之后，气体250也可以形成液体层230。
参考图4。图4为根据本发明的一些实施例的方法100的可选中间阶段的剖视示意图。在一些实施例中，在液体层230蒸发之后，施加外部压力P以压紧电极242及导电垫220，使得电极242通过冷焊黏合到导电垫220，冷焊具体发生在两种相似金属之间，彼此接触并通过外部压力P压紧。通过所述冷焊形成的黏合在两相互接触的铟表面之间特别强。外部压力P可通过放置在微型元件240上的附加板(例如平板)施加，或者改变环境压力以施压于微型元件240及导电垫220，但不应限于此。具体而言，具有小于或等于约1大气压(atm)的值的外部压力P可以被施加到具有环境压力为约0.1托(约10-4atm)的值的空间(例如腔室)内的微型元件240。
在一些其他实施例中，在电极242贴附至导电垫220之后，导电垫220的温度升高到低于铟的熔点的温度点，但其足以将电极242黏合到导电垫220。之后，可以选择性地冷却导电垫220以固化该黏合。
参考图5至图6E。图5为根据本发明的一些实施例的液体辅助微型冷贴附的方法300的流程图。第6A至6E图为图5的方法的中间阶段的剖视示意图。该方法从操作310开始，其中导电垫220形成在基板210上(如图6A所示)。该方法继续操作320，其中将包括面对导电垫220的电极242的微型元件240放置在导电垫220上，使微型元件240与导电垫220接触(如图6B所示)。该方法继续进行操作330，其中在微型元件240放置在导电垫220上之后，在微型元件240及基板210上形成液体层230，使得液体层230的一部分230'渗入至微型元件240与导电垫220之间(如图6C及图6D所示)。该方法继续进行操作340，其中液体层230被蒸发(如图6E所示)。导电垫220基本上由铟组成。电极242基本上由铟组成。
在一些实施例中，如图6C及图6D所示，通过调整在包括蒸气的环境中的导电垫220的温度至选定的温度点，使得蒸气的一部分凝结，以形成液体层230于基板210上，从而实现液体层230的形成。围绕微型元件240的液体层230的一部分230'渗入至微型元件240与导电垫220之间，并且微型元件240被液体层230的该部分230'产生的毛细力抓住。
可通过不同方法形成液体层。图7为根据本发明的一些实施例的方法300的替代中间阶段的剖视示意图。在一些实施例中，气体250局部地喷洒在基板210上，使得气体250的一部分凝结，以在基板210上形成液体层260。围绕微型元件240的液体层260的一部分260'渗入至微型元件240与导电垫220之间。
在此将不再重复与上述喷洒实施例相似的内容。此外，在此也省略与在蒸发液体层260之后将导电垫220的温度升高到低于铟的熔点相关的内容及与上述实施例相似的施加外部压力P以压紧电极242及导电垫220相关的内容。
在一些其他实施例中，在将微型元件240放置在导电垫220上之后(例如在如图2C所示的操作130之后)，在基板210上形成另一液体层。然后蒸发另一液体层及液体层230。如此一来，可进一步加强贴附。
在一些其他实施例中，形成导电垫220为形成至少两个导电垫220。一微型元件240可包括至少两个电极242，并且该至少两个电极242彼此分开并且分别贴附至该至少两个导电垫220。
多种微型元件，例如覆晶型发光二极管、垂直型发光二极管或垂直共振腔面射型雷射(VCSEL)，可以采用图1至图7所示的场景，并且不应限于此。在此的用语「垂直」是指电性连接到第一型半导体层的电极及电性连接到第二型半导体层的电极放置在微型元件的相对两侧。
总而言之，提供了一种液体辅助微型冷贴附的方法，其具有液体层及铟的协同组合的辅助，作为在微型元件及基板上的导电垫之间的界面的两侧上的材料。如此一来，增强了贴附的牢固性和可靠度，而有利于贴附后进行各种制程。
尽管参考本发明的某些实施例已相当详细地描述了本发明，但其他实施例也是可能的。因此，本发明的精神和范围不应限于在此包含的实施例的叙述。
对于本领域技术人员显而易见的是，在不脱离本发明的范围或精神的情况下，可以对本发明的结构进行各种修改和变化。鉴于前述内容，本发明旨在涵盖本发明落入权利要求的范围内的各种修改和变化。

Claims (20)

1.一种液体辅助微型冷贴附方法，其特征在于，包括：
在基板上形成导电垫，其中所述导电垫由铟组成；
在所述导电垫上形成液体层；
将包括面对所述导电垫的电极的微型元件放置在所述导电垫上，使所述微型元件与所述液体层接触并且被所述微型元件与所述导电垫之间的所述液体层产生的毛细力抓住，其中所述电极由铟组成；以及
蒸发所述液体层，使所述电极贴附至所述导电垫并且与所述导电垫电性接触。
2.如权利要求1所述的方法，其特征在于，形成所述液体层还包括：
调整在包括蒸气的环境中的所述导电垫的温度至选定温度点，使所述蒸气的一部分凝结，以在所述导电垫上形成所述液体层。
3.如权利要求2所述的方法，其特征在于，所述选定温度点为露点。
4.如权利要求1所述的方法，其中形成所述液体层包括：
在所述导电垫及所述基板上喷洒气体，使所述气体的至少一部分凝结，以在所述导电垫及所述基板上形成所述液体层。
5.如权利要求4所述的方法，其特征在于，所述气体的水蒸气压高于环境水蒸气压。
6.如权利要求1所述的方法，其特征在于，所述液体层包含水。
7.如权利要求1所述的方法，其特征在于，还包括：
在蒸发所述液体层之后，将所述导电垫的温度升高到低于铟的熔点。
8.如权利要求1所述的方法，其特征在于，还包括：
施加外部压力以压紧所述电极及所述导电垫，使所述电极黏合到所述导电垫。
9.如权利要求1所述的方法，其特征在于，当所述微型元件被所述毛细力抓住时，所述电极与所述导电垫之间的所述液体层的所述部分的厚度小于所述微型元件的厚度。
10.如权利要求1所述的方法，其特征在于，所述微型元件的侧向长度小于或等于100微米。
11.一种液体辅助微型冷贴附方法，其特征在于，包括：
在基板上形成导电垫，其中所述导电垫由铟组成；
将包括面对所述导电垫的电极的微型元件放置在所述导电垫上，使所述微型元件与所述导电垫接触，其中所述电极由铟组成；
在所述放置之后，在所述微型元件及所述基板上形成液体层，使所述液体层的一部分渗入至所述微型元件与所述导电垫之间，并且所述微型元件被所述液体层的所述部分产生的毛细力抓住；以及
蒸发所述液体层，使所述电极贴附至所述导电垫并且与所述导电垫电性接触。
12.如权利要求11所述的方法，其特征在于，形成所述液体层还包括：
调整在包括蒸气的环境中的所述基板的温度至选定温度点，使所述蒸气的一部分凝结，以在所述基板上形成所述液体层。
13.如权利要求12所述的方法，其特征在于，所述选定温度点为露点。
14.如权利要求11所述的方法，其特征在于，形成所述液体层包括：
在所述微型元件及所述基板上喷洒气体，使所述气体的至少一部分凝结，以形成所述液体层于所述基板上并围绕所述微型元件。
15.如权利要求14所述的方法，其特征在于，所述气体的水蒸气压高于环境水蒸气压。
16.如权利要求11所述的方法，其特征在于，所述液体层包含水。
17.如权利要求11所述的方法，其特征在于，还包括：
在蒸发所述液体层之后，将所述导电垫的温度升高到低于铟的熔点。
18.如权利要求11所述的方法，其特征在于，还包括：
施加外部压力以压紧所述电极及所述导电垫，使所述电极黏合到所述导电垫。
19.如权利要求11所述的方法，其特征在于，当所述微型元件被所述毛细力抓住时，所述电极与所述导电垫之间的所述液体层的所述部分的厚度小于所述微型元件的厚度。
20.如权利要求11所述的方法，其特征在于，所述微型元件的侧向长度小于或等于100微米。
CN201911013660.2A 2019-04-01 2019-10-23 液体辅助微型冷贴附方法 Withdrawn CN111769052A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US16/371,136 US10672736B1 (en) 2019-04-01 2019-04-01 Method of liquid assisted micro cold binding
US16/371,136 2019-04-01

Publications (1)

Publication Number Publication Date
CN111769052A true CN111769052A (zh) 2020-10-13

Family

ID=70855958

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201911013660.2A Withdrawn CN111769052A (zh) 2019-04-01 2019-10-23 液体辅助微型冷贴附方法

Country Status (2)

Country Link
US (1) US10672736B1 (zh)
CN (1) CN111769052A (zh)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103613064A (zh) * 2013-11-07 2014-03-05 西安交通大学 一种平板约束下的蒸发诱导纳米粒子线自组装方法
US20150048523A1 (en) * 2012-04-24 2015-02-19 Bondtech Co., Ltd. Chip-on-wafer bonding method and bonding device, and structure comprising chip and wafer
CN106486577A (zh) * 2015-08-27 2017-03-08 美科米尚技术有限公司 微型发光二极管装置
US10141475B1 (en) * 2017-12-24 2018-11-27 Mikro Mesa Technology Co., Ltd. Method for binding micro device to conductive pad
CN111755349A (zh) * 2019-03-28 2020-10-09 美科米尚技术有限公司 液体辅助贴附方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9401306B2 (en) * 2013-11-11 2016-07-26 Regents Of The University Of Minnesota Self-aligned capillarity-assisted microfabrication
US10541152B2 (en) * 2014-07-31 2020-01-21 Skyworks Solutions, Inc. Transient liquid phase material bonding and sealing structures and methods of forming same
US10312218B1 (en) * 2018-07-20 2019-06-04 Mikro Mesa Technology Co., Ltd. Method for binding micro device to substrate

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150048523A1 (en) * 2012-04-24 2015-02-19 Bondtech Co., Ltd. Chip-on-wafer bonding method and bonding device, and structure comprising chip and wafer
CN103613064A (zh) * 2013-11-07 2014-03-05 西安交通大学 一种平板约束下的蒸发诱导纳米粒子线自组装方法
CN106486577A (zh) * 2015-08-27 2017-03-08 美科米尚技术有限公司 微型发光二极管装置
US10141475B1 (en) * 2017-12-24 2018-11-27 Mikro Mesa Technology Co., Ltd. Method for binding micro device to conductive pad
CN111755349A (zh) * 2019-03-28 2020-10-09 美科米尚技术有限公司 液体辅助贴附方法

Also Published As

Publication number Publication date
US10672736B1 (en) 2020-06-02

Similar Documents

Publication Publication Date Title
CN207116403U (zh) 一种用于微元件转移的转置头
US8642408B2 (en) Semiconductor device
US10141475B1 (en) Method for binding micro device to conductive pad
US8460794B2 (en) Self-aligned wafer bonding
US20180097172A1 (en) Mems component and method for encapsulating mems components
US20040041251A1 (en) Universal package for an electronic component with a semiconductor chip and method for producing the universal package
JP2011131309A5 (ja) 半導体パッケージの製造方法及び半導体パッケージ
TW201513405A (zh) 具有安定性支柱之微裝置
JP2004262698A (ja) 陽極接合方法および電子装置
US20110226841A1 (en) Room temperature direct metal-metal bonding
TW201542309A (zh) 用於將二個載體裝置作共晶結合的方法
US20090029152A1 (en) Wafer Bonding Using Nanoparticle Material
US20110169107A1 (en) Method for manufacturing a component, method for manufacturing a component system, component, and component system
TWI705741B (zh) 貼附微型元件至基板上的方法
KR20050072062A (ko) 부재의 접합 구조 및 접합 방법
CN112216642B (zh) 液体辅助黏合方法
CN111769052A (zh) 液体辅助微型冷贴附方法
US10797009B1 (en) Method for transferring micro device
US8928140B2 (en) Method of manufacturing an electronic system
CN111834321B (zh) 形成电性贴附结构的方法
JP4581664B2 (ja) 半導体基板の製造方法、半導体素子の製造方法及び電気光学装置の製造方法
TWI718733B (zh) 液體輔助貼附方法
US10777527B1 (en) Method for transferring micro device
US20210057398A1 (en) Semiconductor device package and method of manufacturing the same
CN111834248A (zh) 用于转移微型元件的方法

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
WW01 Invention patent application withdrawn after publication
WW01 Invention patent application withdrawn after publication

Application publication date: 20201013