TWI718733B - 液體輔助貼附方法 - Google Patents
液體輔助貼附方法 Download PDFInfo
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- TWI718733B TWI718733B TW108139119A TW108139119A TWI718733B TW I718733 B TWI718733 B TW I718733B TW 108139119 A TW108139119 A TW 108139119A TW 108139119 A TW108139119 A TW 108139119A TW I718733 B TWI718733 B TW I718733B
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- 239000007788 liquid Substances 0.000 title claims abstract description 80
- 238000000034 method Methods 0.000 title claims abstract description 55
- 239000000758 substrate Substances 0.000 claims abstract description 34
- 238000001704 evaporation Methods 0.000 claims abstract description 9
- 239000000463 material Substances 0.000 claims description 30
- 239000000853 adhesive Substances 0.000 claims description 18
- 230000001070 adhesive effect Effects 0.000 claims description 18
- 239000007789 gas Substances 0.000 claims description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 12
- 230000008018 melting Effects 0.000 claims description 8
- 238000002844 melting Methods 0.000 claims description 8
- 239000010936 titanium Substances 0.000 claims description 8
- 239000011135 tin Substances 0.000 claims description 7
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 229910052738 indium Inorganic materials 0.000 claims description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 5
- 229910052718 tin Inorganic materials 0.000 claims description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- 230000005496 eutectics Effects 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 238000005507 spraying Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 41
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 4
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 239000011651 chromium Substances 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
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Abstract
一種液體輔助貼附方法。該方法包含:形成導電墊於基板上;放置微型元件於導電墊上,使得微型元件接觸導電墊,其中微型元件包含電極,電極面向導電墊;在前述放置後形成液體層於微型元件和基板上,使得一部分的液體層滲透至微型元件和導電墊之間,且微型元件由液體層的前述部分所產生的毛細力抓住;以及蒸發液體層,使得電極貼附至導電墊並電性連接導電墊。
Description
本揭露是關於一種貼附微型元件至基板的方法。
此處的陳述僅提供與本揭露有關的背景信息,而不必然地構成現有技術。
近年來,微型元件在許多應用領域都逐漸興起。在與微型元件相關的各個技術層面中,轉移製程是微型元件要達到商業化的最重要挑戰任務之一。轉移製程當中的一個重要議題是將微型元件黏合至基板上。
本揭露的一些實施方式公開了一種液體輔助貼附方法。該方法包含:形成導電墊於基板上;放置微型元件於導電墊上,使得微型元件接觸導電墊,其中微型元件包含電極,電極面向導電墊;在前述放置後形成液體層於微型元件和基板上,使得一部分的液體層滲透至微型元件和導電墊之間,且微型元件由液體層的前述部分所產生的毛細力抓住;以及蒸發液體層,使得電極貼附至導電墊並電性連接導電墊。
為了讓本揭露的上述特徵和優點能更明顯易懂,
下文特舉實施例,並配合所附圖式作詳細說明如下。
100‧‧‧液體輔助貼附方法
110、120、130、140‧‧‧操作
210‧‧‧基板
220‧‧‧導電墊
222‧‧‧金屬墊
224‧‧‧黏合材料
230、260‧‧‧液體層
230’‧‧‧部分的液體層
240‧‧‧微型元件
242‧‧‧電極
2422‧‧‧金屬電極
2424‧‧‧黏合材料
250‧‧‧氣體
270‧‧‧黏附層
當結合隨附圖式閱讀時,自以下詳細描述將最佳地理解本揭露之態樣。應注意,根據工業中之標準實務,各特徵未必依比例繪示。實際上,可出於論述清晰之目的而增減所說明的特徵之尺寸。
第1圖繪示本揭露一些實施例中液體輔助貼附方法的流程示意圖。
第2A圖繪示本揭露一些實施例中液體輔助貼附方法的中間階段的剖面示意圖。
第2B圖繪示本揭露一些實施例中液體輔助貼附方法的中間階段的剖面示意圖。
第2C圖繪示本揭露一些實施例中液體輔助貼附方法的中間階段的剖面示意圖。
第2D圖繪示本揭露一些實施例中液體輔助貼附方法的中間階段的剖面示意圖。
第2E圖繪示本揭露一些實施例中液體輔助貼附方法的中間階段的剖面示意圖。
第3圖繪示本揭露一些實施例中液體輔助貼附方法的中間階段的剖面示意圖。
第4圖繪示本揭露一些實施例中液體輔助貼附方法的可選中間階段的剖面示意圖。
第5圖繪示本揭露一些實施例中液體輔助貼附方法的可選
中間階段的剖面示意圖。
第6A圖繪示本揭露一些實施例中微型元件在導電墊上的剖面示意圖。
第6B圖繪示本揭露一些實施例中微型元件在導電墊上的剖面示意圖。
第7圖繪示本揭露一些實施例中微型元件於導電墊上的剖面示意圖。
第8圖繪示本揭露一些實施例中微型元件在導電墊上的剖面示意圖。
第9圖繪示本揭露一些實施例中微型元件在複數個導電墊上的剖面示意圖。
為更進一步闡述本揭露為達成預定發明目的所採取的技術手段及功效,以下結合圖式及較佳實施例,對依據本揭露提出的液體輔助貼附方法,其具體實施方式、結構、方法、步驟、特徵及其功效,詳細說明如後。
有關本揭露的前述及其他技術內容、特點及功效,在以下配合參考圖式的較佳實施例的詳細說明中將可清楚呈現。通過具體實施方式的說明,當可對本揭露為達成預定目的所採取的技術手段及功效更加深入且具體的瞭解,然而所附圖式僅是提供參考與說明之用,並非用來對本揭露加以限制。
為簡化圖式,一些現有已知慣用的結構與元件在圖式中將以簡單示意的方式繪示。並且,除非有其他表示,在
不同圖式中相同的元件符號可視為相對應的元件。這些圖式的繪示是為了清楚表達這些實施方式中各元件之間的連接關係,並非繪示各元件的實際尺寸。
參考第1圖和第2A圖至第2E圖。第1圖繪示本揭露一些實施例中液體輔助貼附方法100的流程示意圖。第2A圖至第2E圖繪示本揭露一些實施例中液體輔助貼附方法100的中間階段的剖面示意圖。本揭露的一些實施例提供一種液體輔助貼附方法100。方法100從操作110開始,形成導電墊220於基板210上(亦可參考第2A圖)。方法100接著進行操作120,放置微型元件240於導電墊220上(亦可參考第2B圖)。方法100接著進行操作130,在前述放置後形成液體層230於微型元件240和基板210上(亦可參考第2C圖和第2D圖)。方法100接著進行操作140,蒸發液體層230(亦可參考第2E圖)。
參考第2A圖和第2B圖。在一些實施例中,導電墊220形成於基板210上且微型元件240放置於導電墊220上,使得微型元件240接觸導電墊220。在一些實施例中,微型元件240包含電極242,電極242面向導電墊220。在一些實施例中,電極242和導電墊220當中的至少一者包含銅(copper,Cu)、錫(tin,Sn)、鈦(titanium,Ti)和銦(indium,In)當中的一個。在一些實施例中,前述的銅、錫、鈦和銦當中的一個,其組成電極242和導電墊220當中的至少一者中過半數量的原子。在一些實施例中,微型元件240的側向長度小於或等於約100微米。前述側向長度是在Y方向上量測的長度。Y方向垂直於厚度方向(Z方向),Z方向垂直於基板210
的平面延伸方向。
參考第2C圖和第2D圖,液體層230形成於微型元件240和基板210上。此外亦參考第3圖。在一些實施例中,液體層230形成於微型元件240和基板210上(參考第2C圖),使得一部分230’的液體層230滲透至微型元件240和導電墊220之間,且微型元件240由液體層230的前述部分230’所產生的毛細力抓住(參考第2D圖)。形成液體層230可以是由在包含蒸氣的環境中降低基板210的溫度之方式達成,使得至少一部分蒸氣凝結並形成液體層230於微型元件240和基板210上。在一些實施例中,基板210的溫度降低至約水的露點以形成液體層230。在一些實施例中,液體層230包含水。在一些實施例中,當毛細力抓住微型元件240時,位於微型元件240和導電墊220之間的液體層230的部分230’的厚度小於微型元件240的厚度。
液體層230可以用不同的方法形成。第3圖繪示本揭露一些實施例中方法100的中間階段的剖面示意圖。在第3圖所示的一些實施例中,局部地噴灑氣體250至基板210上,使得一部分的氣體250凝結並形成液體層230於基板210上並圍繞微型元件240。在一些實施例中,氣體250的水蒸氣壓高於環境水蒸氣壓,從而自發性地在噴灑氣體250後形成液體層230。在一些實施例中,氣體250主要由水和氮組成,但不完全排除其他化合物或元素。當初始噴灑之氣體250的水蒸氣壓低於環境水蒸氣壓時,氣體250亦可在調節基板210溫度至露點後形成液體層230。
參考第2E圖,蒸發液體層230。在一些實施例中,在毛細力抓住微型元件240後蒸發液體層230,使得微型元件240的電極242黏附固定至導電墊220。換句話說,電極242貼附至導電墊220並電性接觸導電墊220。
在一些實施例中,形成導電墊220為形成至少兩個導電墊220。一個微型元件240可包含至少兩個電極242,前述至少兩個電極242彼此分隔開並分別貼附至前述至少兩個導電墊220。前述實施例的結構將於後敘述。
參考第4圖。第4圖繪示本揭露一些實施例中方法100的可選中間階段的剖面示意圖。在一些實施例中,於微型元件240放置於導電墊220上之前,另一液體層260形成於導電墊220和基板210上。在形成前述另一液體層260後,執行描述於操作120至操作140之實施例的中間階段。藉由在不同的中間階段形成兩次液體層(亦即,液體層260和液體層230),並接著蒸發液體層260和液體層230,微型元件240在導電墊220上的位置可以較為精準,且微型元件240可更為牢固地貼附於導電墊220上。
參考第5圖。第5圖繪示本揭露一些實施例中方法100的可選中間階段的剖面示意圖。在一些實施例中,在形成導電墊220之前形成黏附層270於基板210上,從而增強導電墊220於基板210上的黏附能力。黏附層270可以由鉻(chromium,Cr)或鈦(titanium,Ti)作成,但不以此為限。
參考第6A圖和第6B圖。第6A圖和第6B圖繪示本
揭露一些實施例中微型元件240在導電墊220上的剖面示意圖。在一些實施例中,導電墊220和微型元件240的電極242當中至少一者包含黏合材料。詳細而言,在第6A圖所描述的一些實施例中,微型元件240的電極242包含金屬電極2422和黏合材料2424,黏合材料2424在金屬電極2422上。在電極242貼附至導電墊220並與導電墊220電性接觸的情況下,黏合材料2424接觸導電墊220。在第6B圖所描述的一些實施例中,導電墊220包含金屬墊222和黏合材料224。金屬墊222在基板210上,黏合材料224在金屬墊222上,黏合材料224接觸電極242。黏合材料224和黏合材料2424包含焊料材料,例如錫(tin,Sn)、銦(indium,In)或其組合,但不以此為限。注意,在這些實施例中,電極242黏合至導電墊220時電極242和導電墊220的溫度低於黏合材料2424和黏合材料224的熔點。
參考第7圖。第7圖繪示本揭露一些實施例中微型元件240於導電墊220上的剖面示意圖。在一些實施例中,在液體層230(或液體層230和液體層260)蒸發後,進一步升高導電墊220的溫度至高於黏合材料224(或在其它實施例中的黏合材料2424)的熔點。第7圖顯示升高前述溫度至高於前述熔點後所得到的結構。在一些實施例中,在液體層230蒸發後,進一步升高導電墊220的溫度至低於黏合材料224(或黏合材料2424)的熔點。前述“低於”意旨溫度點雖低於熔點但仍足以引發黏合材料224和電極242之間(或黏合材料2424和導電墊220之間)的間隙擴散,使得微型元件240黏合至導電墊
220並電性接觸導電墊220。在這些情況下,由於溫度較低,可以更好地保護微型元件240。此外,由於沒有“熔化”,更加提高了微型元件240在導電墊220上的位置精確度。
在一些實施例中,導電墊220的厚度小於或等於2微米。在一些實施例中,導電墊220的厚度小於或等於0.5微米。在一些實施例中,黏合材料2424的厚度小於或等於10微米。在一些實施例中,黏合材料2424的厚度大於或等於0.1微米。導電墊220和黏合材料2424的厚度(或電極242和黏合材料224的厚度)的考量是為了確保焊料材料和貴金屬(例如,銅)或鈦之間有足夠的空間可以進行間隙擴散。此處所描述的厚度是在圖式的剖面示意圖中平行於厚度方向(Z方向)的部件(例如,黏合材料2424或導電墊220)的最大長度。
參考第8圖。第8圖繪示本揭露一些實施例中微型元件240在導電墊220上的剖面示意圖。在一些實施例中,在液體層230蒸發後,進一步升高導電墊220的溫度至高於導電墊220和微型元件240的電極242的共晶點。第8圖顯示升高前述溫度至高於前述共晶點後所得到的結構。
參考第9圖。第9圖繪示本揭露一些實施例中微型元件240在複數個導電墊220上的剖面示意圖。在一些實施例中,複數個(例如兩個)電極242分別接觸複數個(例如兩個)導電墊220。應當注意,不同導電墊220彼此電性隔離。不同電極242除了通過微型元件240的其它部分彼此可以算是有連接外,電極242基本上彼此電性隔離。
綜上所述,本揭露的實施例提供一種液體輔助貼
附方法,其在放置微型元件於原本已經形成於基板上的導電墊上之後形成液體層於基板上。在蒸發液體層後,微型元件黏附固定並貼附至導電墊。因此,在黏合之前和黏合過程中,微型元件保持在適當位置以便於前述黏合。
以上所述,僅是本揭露的較佳實施例而已,並非對本揭露作任何形式上的限制,雖然本揭露已以較佳實施例揭露如上,然而並非用以限定本揭露,任何熟悉本專業的技術人員,在不脫離本揭露技術方案範圍內,當可利用上述揭示的技術內容作出些許更動或修飾為等同變化的等效實施例,但凡是未脫離本揭露技術方案的內容,依據本揭露的技術實質對以上實施例所作的任何簡單修改、等同變化與修飾,均仍屬於本揭露技術方案的範圍內。
130‧‧‧操作
210‧‧‧基板
220‧‧‧導電墊
230‧‧‧液體層
230’‧‧‧部分的液體層
240‧‧‧微型元件
242‧‧‧電極
Claims (19)
- 一種液體輔助貼附方法,包含:形成一導電墊於一基板上;放置一微型元件於該導電墊上,使得該微型元件接觸該導電墊,其中該微型元件包含一電極,該電極面向該導電墊;在該放置後形成液體層於該微型元件和該基板上,使得一部分的該液體層滲透至該微型元件和該導電墊之間,且該微型元件由該液體層的該部分所產生的毛細力抓住,其中該液體層為水;以及蒸發該液體層,使得該電極貼附至該導電墊並電性連接該導電墊。
- 如請求項1所述的方法,其中形成該液體層包含:在包含一蒸氣的環境中降低該基板的溫度,使得至少一部分該蒸氣凝結並形成該液體層。
- 如請求項2所述的方法,其中降低該基板的該溫度至約水的露點以形成該液體層。
- 如請求項1所述的方法,其中形成該液體層包含:噴灑一氣體至該微型元件和該基板上,使得至少一部分的該氣體凝結並形成該液體層於該微型元件和該基板上。
- 如請求項4所述的方法,其中該氣體的水蒸氣壓高於環境水蒸氣壓。
- 如請求項4該的方法,其中該氣體主要由氮和水組成。
- 如請求項1所述的方法,更包含:在放置該微型元件於該導電墊上之前形成另一液體層於該導電墊和該基板上。
- 如請求項1所述的方法,更包含:在形成該導電墊之前形成一黏附層於該基板上。
- 如請求項1所述的方法,其中該導電墊的厚度小於或等於約2微米。
- 如請求項1所述的方法,其中該導電墊的厚度小於或等於約0.5微米。
- 如請求項1所述的方法,其中蒸發該液體層包含:在蒸發該液體層後升高該導電墊的溫度,使得該電極在該液體層蒸發後黏附固定至該導電墊。
- 如請求項1所述的方法,其中該導電墊和該電極當中至少一者包含黏合材料,且該方法更包含:在蒸發該液體層後升高該導電墊的溫度至高於該黏合材料的熔點。
- 如請求項1所述的方法,其中該導電墊和該電極當中至少一者包含黏合材料,且該方法更包含:在蒸發該液體層後升高該導電墊的溫度至低於該黏合材料的熔點。
- 如請求項1所述的方法,更包含:在蒸發該液體層後升高該導電墊的溫度至高於該導電墊和該電極的共晶點。
- 如請求項1所述的方法,其中當毛細力抓住該微型元件時,位於該微型元件和該導電墊之間的該部分的該液體層的厚度小於該微型元件的厚度。
- 如請求項1所述的方法,其中該電極和該導電墊當中的至少一者包含銅、錫、鈦和銦當中的一個。
- 如請求項16所述的方法,其中該銅、錫、鈦和銦當中的一個,其組成該電極和該導電墊當中的至少一 者中過半數量的原子。
- 如請求項1所述的方法,其中該微型元件的側向長度小於或等於約100微米。
- 如請求項1所述的方法,其中該電極的厚度範圍從約0.1微米至約10微米。
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TWI279391B (en) * | 2002-04-11 | 2007-04-21 | Koninkl Philips Electronics Nv | Method of manufacturing an electronic device |
TWI258430B (en) * | 2003-12-26 | 2006-07-21 | Ind Tech Res Inst | A method of forming micro-droplet to flat film on a substrate and the same |
DE102005028114A1 (de) * | 2005-06-13 | 2006-12-14 | Elringklinger Ag | Dichtungsmasse und Dichtungselement für Hochtemperatur-Brennstoffzellen |
CN101803007A (zh) * | 2007-09-28 | 2010-08-11 | 三洋电机株式会社 | 元件搭载用基板及其制造方法、电路装置及其制造方法、便携式设备 |
TWI397783B (zh) * | 2007-12-03 | 2013-06-01 | Asml Netherlands Bv | 微影裝置及器件製造方法 |
TWI486721B (zh) * | 2011-02-18 | 2015-06-01 | Asml Netherlands Bv | 基板支架、微影裝置、元件製造方法及製造基板支架之方法 |
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US10959336B2 (en) | 2021-03-23 |
US20200315028A1 (en) | 2020-10-01 |
CN111755349A (zh) | 2020-10-09 |
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