JP2007268613A - 拡散はんだ付け方法 - Google Patents
拡散はんだ付け方法 Download PDFInfo
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- JP2007268613A JP2007268613A JP2007055468A JP2007055468A JP2007268613A JP 2007268613 A JP2007268613 A JP 2007268613A JP 2007055468 A JP2007055468 A JP 2007055468A JP 2007055468 A JP2007055468 A JP 2007055468A JP 2007268613 A JP2007268613 A JP 2007268613A
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- pad
- solder
- layer
- metal layer
- pads
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
- B23K1/0016—Brazing of electronic components
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/008—Soldering within a furnace
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
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Abstract
【解決手段】拡散はんだ付けプロセスの前に、後に接続される金属層2、11がそれぞれはんだ層3、12によってめっきされていることを特徴とする。
【選択図】図2
Description
本発明は、拡散はんだ付けプロセスを用いた金属層の接続方法に関するものである。
固体液体相互拡散ボンディングとしても知られている拡散はんだ付けとは、等温凝固の原理に基づく鉛フリーの配線技術のことである。2つの高融点金属層間または基板間に位置する低融点はんだ層を加熱し、急速に反応させて、上記低融点はんだよりも融点が高い金属間化合物を形成する。
したがって、本発明の目的は、拡散はんだ付けプロセスを用いて少なくとも2つの金属層を接続させる金属層の接続方法であって、上記金属層に加えられる外部力を用いずに、上記金属層が自己整合する接続方法を提供することにある。同時に、上記金属層が、上記融解されたはんだによってよく濡らされる必要があり、上記融解されたはんだを十分に窪みのないようにする必要がある。
本発明について、添付図面を参照しながら詳述する。
以下に、本発明について図面を参照しながら詳述する。
Claims (50)
- 拡散はんだ付けプロセスを用いて少なくとも2つの金属層を接続させる金属層の接続方法であって、
上記拡散はんだ付けプロセスを実行する前に、後に接続されるそれぞれの上記金属層を、それぞれのはんだ層でめっきする工程を含むことを特徴とする金属層の接続方法。 - 上記拡散はんだ付けプロセス中に、両方の上記金属層が、上記金属層を接合する融解されたはんだの表面張力によって、互いに自己整合することを特徴とする請求項1に記載の方法。
- 上記融解されたはんだの濡れ性が向上することにより、上記表面張力が増すことを特徴とする請求項2に記載の方法。
- 上記拡散はんだ付けプロセスを実行する工程は、プロセス中に、上記金属層に外部の機械的な圧力を加えずに上記拡散はんだ付けプロセスを実行することを特徴とする請求項3に記載の方法。
- 上記はんだ層のはんだを、はんだの融点よりも高い温度で一度だけ加熱する工程を含むことを特徴とする請求項4に記載の方法。
- 上記はんだ層を接触させて配置し、それらを互いに位置あわせした後、上記はんだを加熱することを特徴とする請求項5に記載の方法。
- 上記金属層の少なくとも1つとそのはんだ層との間に、拡散障壁層を配置することを特徴とする請求項1に記載の方法。
- 上記金属層は、銅、銀、金、及び、パラジウムから選ばれる少なくとも1つを含んでいることを特徴とする請求項1に記載の方法。
- 上記はんだ層は、スズ、銀、インジウム、ガリウム、ビスマス、金、及び、銅から選ばれる少なくとも1つを含んでいることを特徴とする請求項1に記載の方法。
- 上記拡散はんだ付けプロセスを行う前に、不活性ガス雰囲気下または真空において、蟻酸の分圧下で上記はんだ層のガスを抜くガス抜き工程を含むことを特徴とする請求項1に記載の方法。
- 上記ガス抜き工程は、上記はんだの融点よりも低い温度で行われることを特徴とする請求項10に記載の方法。
- 上記蟻酸の分圧は20〜100mbarであることを特徴とする請求項11に記載の方法。
- 上記ガス抜き工程は、2〜3分の間行われることを特徴とする請求項8に記載の方法。
- 上記拡散はんだ付けプロセス中に、上記金属層および上記はんだ層を、上記はんだ層の全ての上記はんだが融解された状態が少なくとも存在するような速度で加熱する加熱工程を含むことを特徴とする請求項10に記載の方法。
- 上記加熱工程は、上記金属層およびはんだ層を、常圧より高い圧力下で、上記はんだの融点よりも高い温度で加熱することを特徴とする請求項14に記載の方法。
- 上記加熱工程の雰囲気は、不活性ガス中にガス状のフラックス材を含んでなることを特徴とする請求項15に記載の方法。
- 上記ガス状のフラックス材は、原子状水素、分子状水素、一酸化炭素、アンモニア、及び、蟻酸から選ばれる少なくとも1つであることを特徴とする請求項16に記載の方法。
- 上記金属層および上記はんだ層を、蟻酸の分圧が20〜100mbarである真空中において、上記はんだの融点よりも高い温度に加熱することを特徴とする請求項14に記載の方法。
- 上記金属層をキャリアに配置し、パターニングすることにより、少なくとも1つのパッドを形成する工程を含むことを特徴とする請求項1に記載の方法。
- 上記はんだ層を各金属層と同じ形状にパターニングする工程をさらに含むことを特徴とする請求項19に記載の方法。
- 上記はんだ層を各金属層とは異なる形状にパターニングする工程をさらに含むことを特徴とする請求項19に記載の方法。
- 上記パターニングする工程は、上記はんだ層を、はんだレジストによってパターニングすることを特徴とする請求項21に記載の方法。
- 上記パターニングする工程は、互いに面した上記金属層における上記はんだレジストを、上記金属層が互いに対称的であるように、パターニングする工程を含むことを特徴とする請求項22に記載の方法。
- 上記少なくとも1つのパッドの側壁を、上記融解されたはんだによって濡れない層によって、覆う工程を含むことを特徴とする請求項19に記載の方法。
- 互いに面した上記金属層の上記パッドは、互いに対称的に構成されることを特徴とする請求項19に記載の方法。
- 上記パッドは、第1パッドおよび第2パッドを含み、
上記第2パッドの面積は、上記第1パッドの面積よりも広く、少なくとも2つの第2パッド間には、少なくとも1つの第1パッドが配置されていることを特徴とする請求項25に記載の方法。 - 上記第2パッドを、上記第1パッドの各側面に位置する上記第2パッドの静水力の合計が同じであるように、配置する工程を含むことを特徴とする請求項26に記載の方法。
- 上記パッドは、第1パッドおよび第2パッドを含み、
上記第2パッドの面積は、上記第1パッドの面積よりも広く、少なくとも2つの第1パッド間には、少なくとも1つの第2パッドが配置されていることを特徴とする請求項25に記載の方法。 - 上記第2パッドを、上記第2パッドの各側面に位置する上記第1パッドの静水力の合計が同じであるように、配置する工程を含むことを特徴とする請求項28に記載の方法。
- 上記第1パッドの直径は30μm未満であり、上記第2パッドの直径は30μmより大きいことを特徴とする請求項26に記載の方法。
- 拡散はんだ付けプロセスを実行する間に、上記第2パッドの静水圧を用いて、上記第1パッド間の上記融解されたはんだに圧力を加えることを特徴とする請求項26に記載の方法。
- 上記キャリアは、電子部品のウェハーおよび基板を含むことを特徴とする請求項19に記載の方法。
- 拡散はんだ付けプロセスを用いて少なくとも2つの金属層を接続させるための機械的接続であって、
後に接続される上記金属層はそれぞれはんだ層によってめっきされていることを特徴とする機械的接続。 - 上記金属層の少なくとも1つとそのはんだ層との間に、拡散障壁層が配置されていることを特徴とする請求項33に記載の接続。
- 上記金属層は、銅、銀、金、及び、パラジウムから選ばれる少なくとも1つを含んでいることを特徴とする請求項34に記載の接続。
- 上記はんだ層は、スズ、銀、インジウム、ガリウム、ビスマス、金、及び、銅から選ばれる少なくとも1つを含んでいることを特徴とする請求項35に記載の接続。
- 上記金属層はキャリアに配置され、パターニングされることにより、少なくとも1つのパッドを形成していることを特徴とする請求項33に記載の接続。
- 上記少なくとも1つのパッドは、シールリング、上記第1接触部の応力緩和、放熱、電磁シールド、配線面、および、アライメントマークからなる群より選ばれる少なくとも1つに用いられることを特徴とする請求項37に記載の接続。
- 上記少なくとも1つのパッドの側壁は、上記融解されたはんだによって濡れない層によって、覆われていることを特徴とする請求項37に記載の接続。
- 互いに面した上記金属層の上記パッドは、互いに対称的に構成されていることを特徴とする請求項37に記載の接続。
- 水平化素子が、少なくとも1つの上記金属層の少なくとも2つのパッド間に配置され、
上記水平化素子の厚さは、上記金属層の厚さと同じであり、
上記2つのパッドの間の隙間が上記水平化素子によって充填されていることを特徴とする請求項37に記載の接続。 - 上記水平化素子は、電気的に絶縁性であり、はんだによって濡れないことを特徴とする請求項41に記載の接続。
- 上記パッドは、第1パッドおよび第2パッドを含み、
上記第2パッドの面積は、上記第1パッドの面積よりも広く、少なくとも2つの第2パッド間には、少なくとも1つの第1パッドが配置されていることを特徴とする請求項37に記載の接続。 - 上記パッドは、第1パッドおよび第2パッドを含み、
上記第2パッドの面積は、上記第1パッドの面積よりも広く、少なくとも2つの第1パッド間には、少なくとも1つの第2パッドが配置されていることを特徴とする請求項37に記載の接続。 - 上記第1パッドの直径は30μm未満であり、上記第2パッドの直径は30μmより大きいことを特徴とする請求項43に記載の接続。
- 上記キャリアは、電子部品のウェハーおよび基板を含むことを特徴とする請求項37に記載の接続。
- 上記第1パッドは、上記ウェハーの電気接続部および基板の電気接続部への電気的な接続に用いられることを特徴とする請求項46に記載の接続。
- 拡散はんだ付けプロセスによって処理され、接合構造を形成するための層構造であって、
複数の第1のパッドを規定する第1のパターンによって第1の金属層が形成される第1の基板と、
複数の第2のパッドを規定する第2のパターンによって第2の金属層が形成される第2の基板と、
上記第1のパターンによって上記第1の金属層にめっきされる第1のはんだ層と、
上記第2のパターンによって上記第2の金属層にめっきされる第2のはんだ層と、
融解されたはんだが側壁に付着することを防止するための手段であって、少なくとも1つの上記第1の金属層および第2の金属層の側壁に設けられた手段と、
を含み、
上記第1のはんだ層および第2のはんだ層が接するように配置することによって、上記第1の基板および第2の基板を配置し、上記拡散はんだ付けプロセスによって、上記第1の基板および第2の基板を接合させることを特徴とする層構造。 - 上記手段は、側壁に配置された、濡れない層であることを特徴とする請求項48の層構造。
- 複数の水平化素子をさらに含み、
上記水平化素子が、少なくとも1つの上記第1のパッドおよび上記第2のパッド間に配置され、
上記水平化素子は電気的に絶縁性であり、
上記パッドのはんだが上記水平化素子に付着し上記パッドを結合することを防止するため、融解されたはんだによって濡れない材料によって形成されていることを特徴とする請求項48の層構造。
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US11/370,205 US20070205253A1 (en) | 2006-03-06 | 2006-03-06 | Method for diffusion soldering |
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