CN112216642B - 液体辅助黏合方法 - Google Patents

液体辅助黏合方法 Download PDF

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Publication number
CN112216642B
CN112216642B CN201911017738.8A CN201911017738A CN112216642B CN 112216642 B CN112216642 B CN 112216642B CN 201911017738 A CN201911017738 A CN 201911017738A CN 112216642 B CN112216642 B CN 112216642B
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electrode
contact pad
liquid layer
contact
facing
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CN112216642A (zh
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陈立宜
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Mikro Mesa Technology Co Ltd
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Mikro Mesa Technology Co Ltd
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Abstract

本发明公开了一种液体辅助黏合方法，包括：在元件的电极和基板的接触垫之间形成具有液体层的结构，且液体层的两相对表面分别与电极和接触垫接触，其中氢键在电极与接触垫的至少一个和液体层之间形成；及蒸发液体层以破坏氢键，使得电极面向接触垫的表面与接触垫面向电极的表面的至少一个被活化，以便助于在元件的电极和接触垫之间形成扩散黏合，其中电极和接触垫之间的接触面积小于或等于1平方毫米。本发明所提出的液体辅助黏合方法可帮助在电极的表面上的原子与接触垫的表面上的原子之间的电子云重叠，以助于之后形成扩散黏合。

Description

液体辅助黏合方法
技术领域
本发明涉及元件的黏合方法，特别是涉及一种液体辅助黏合方法。
背景技术
用于转移元件的传统技术包括借由晶圆黏合(wafer bonding)将元件从转移晶圆(transfer wafer)转移至接收基板(receiving substrate)。一种这样的实施方式是「直接黏合」(direct bonding)，其涉及将元件阵列从转移晶圆黏合至接收基板的一个黏合阶段，接着再移除转移晶圆。另一种这样的实施方式是「间接黏合」(indirect bonding)，其涉及两个黏合/剥离(de-bonding)阶段。在间接黏合中，转移头可从供体基板(donorsubstrate)拾取元件阵列，然后将元件阵列黏合至接收基板，接着再移除转移头。
近年来，许多研究人员和专家试图克服在可用于商业应用中的元件进行大量转移(也即，转移数百万或数千万元件)的难题。在这些难题中，降低成本、时间效率和良率是三个重要的议题。
发明内容
本发明的目的在于克服现有技术的缺陷，而提出一种液体辅助黏合方法，其由于较低温的黏合过程，元件可被更好地保护。
本发明的目的及解决其技术问题是采用以下技术方案来实现的。
根据本发明的一些实施方式提供一种液体辅助黏合方法。所述方法包含：在元件的电极和基板的接触垫之间形成具有液体层的结构，且液体层的两相对表面分别与电极和接触垫接触，其中氢键在电极与接触垫的至少一个和液体层之间形成；以及蒸发液体层以破坏氢键，使得电极面向接触垫的表面与接触垫面向电极的表面的至少一个被活化，以便助于在元件的电极和接触垫之间形成扩散黏合，其中电极和接触垫之间的接触面积小于或等于1平方毫米。
根据本发明的一实施例，电极面向接触垫的表面与接触垫面向电极的表面为在厚度方向上向上或向下弯曲的弯曲表面。
根据本发明的一实施例，液体辅助黏合方法还包括在蒸发液体层的期间施加外部压力以压缩电极和接触垫。
根据本发明的一实施例，液体辅助黏合方法还包括加热基板至低于电极和接触垫的共晶点且高于液体层的沸点的温度点以形成扩散黏合，其中电极和接触垫包括金属，且电极和接触垫的至少一个包括铜、钛、锡和铟中的至少一个。
根据本发明的一实施例，液体辅助黏合方法还包括加热基板至低于电极和接触垫中的一个的熔点的温度点以形成扩散黏合，其中电极和接触垫中的一个包括铜、钛、锡和铟中的至少一个，且电极和接触垫中的另一个包括导电氧化物。
根据本发明的一实施例，元件的侧向长度小于或等于100微米。
根据本发明的一实施例，在形成结构之后，多个氧化物离子键在电极和液体层之间，或是在接触垫和液体层之间形成。
根据本发明的一实施例，当液体层蒸发时，氧化物离子键断裂。
根据本发明的一实施例，电极面向接触垫的表面与接触垫面向电极的该表面中的一个是亲水性的。
根据本发明的一些实施方式提供一种液体辅助黏合方法。所述方法包含：在元件的电极和基板的接触垫之间形成具有液体层的结构，且液体层的两相对表面分别与电极和接触垫接触，其中氢键在电极与接触垫的至少一个和液体层之间形成；蒸发液体层以破坏氢键，使得电极面向接触垫的表面与接触垫面向电极的表面的至少一个被活化，以便助于在元件的电极和接触垫之间形成扩散黏合；及加热基板至低于电极和接触垫中的一个的熔点的温度点以形成扩散黏合，其中电极和接触垫的所述一个包括铜、钛、锡和铟中的至少一个，且电极和接触垫中的另一个包括导电氧化物。
根据本发明的一实施例，电极和接触垫之间的接触面积小于或等于1平方毫米。
根据本发明的一实施例，电极面向接触垫的表面与接触垫面向电极的表面为在厚度方向上向上或向下弯曲的弯曲表面。
根据本发明的一实施例，液体辅助黏合方法还包括在蒸发液体层的期间施加外部压力以压缩电极和接触垫。
根据本发明的一实施例，铜、锡、铟和钛中的一个占电极和接触垫的至少一个中的原子数目的一半以上。
根据本发明的一实施例，元件的侧向长度小于或等于100微米。
根据本发明的一实施例，在形成结构之后，多个氧化物离子键在电极和液体层之间，或是在接触垫和液体层之间形成。
根据本发明的一实施例，当液体层蒸发时，氧化物离子键断裂。
根据本发明的一实施例，电极面向接触垫的表面与接触垫面向电极的表面中的一个是亲水性的。
根据本发明的一实施例，蒸发液体层是在液体层的沸点的温度下进行。
根据本发明的一实施例，轨域重叠是在电极和接触垫之间形成，以便助于在元件的电极和接触垫之间形成扩散黏合。
本发明与现有技术相比具有明显的优点和有益效果。借由上述技术方案，本发明的液体辅助黏合方法在电极和接触垫之间形成贴附，可帮助在电极的表面上的原子与接触垫的表面上的原子之间的电子云重叠，以助于之后形成扩散黏合。
上述说明仅是本发明技术方案的概述，为了能够更清楚了解本发明的技术手段，而可依照说明书的内容予以实施，并且为了让本发明的上述和其他目的、特征和优点能够更明显易懂，以下特举较佳实施例，并配合附图，详细说明如下。
附图说明
为让本发明的上述和其他目的、特征、优点与实施例能更明显易懂，所附图式的说明如下：
图1是根据本发明的一些实施例的一种液体辅助黏合方法的流程图；
图2是图1所示的液体辅助黏合方法根据本发明的一些实施例的流程图；
图3A是根据本发明的一些实施例的液体辅助黏合方法的中间阶段的剖面示意图；
图3B是根据本发明的一些实施例的液体辅助黏合方法的中间阶段的剖面示意图；
图3C是根据本发明的一些实施例的液体辅助黏合方法的中间阶段的剖面示意图；
图3D是根据本发明的一些实施例的液体辅助黏合方法的中间阶段的剖面示意图；
图3E是根据本发明的一些实施例的液体辅助黏合方法的中间阶段的剖面示意图；
图4A是根据本发明的一些实施例的液体层和电极之间的接口及液体层和接触垫之间的界面的剖面放大示意图；
图4B是根据本发明的一些实施例在电极和接触垫之间的液体层蒸发之后电极面向接触垫和接触垫面向电极的剖面放大示意图；
图5是根据本发明的一些实施例的液体层和电极之间的界面及液体层和接触垫之间的界面的剖面示意图；及
图6是根据本发明的一些实施例的液体辅助黏合方法中的选择性中间阶段的剖面示意图。
【主要元件符号说明】
100：方法
110、120、110-1、110-2、110-3：操作
210：基板
220、220’：接触垫
2202、2202’：表面
230：液体层
2302：水分子
2302-H1、2302-H2：氢键
2302-O：氧化物离子键
240：元件
242、242’：电极
2422、2422’：表面
250：转移头
S：结构
A1：接触面积
L1：侧向长度
TH：厚度方向
P：外部压力
具体实施方式
现在将详细地描述本发明的实施例，其示例是绘示在附图中。只要可能，相同的参考标号标记在图式和说明书中，意指相同或相似的部件。
在各种实施例中，描述是参考图式来进行。然而，可在无此等特定细节的一个或多个的情况下或与其他已知方法及组态组合地实践某些实施例。在以下描述中，阐述诸多特定细节(诸如特定组态、尺寸及程序等等)以提供本发明的彻底理解。在其他例项中，未特别详细地描述熟知半导体程序及制造技术以非不必要地使本发明不清楚。在本说明书中，参考「一实施例」意指：结合该实施例所描述的特定特征、结构、组态或特性包含于本发明之至少一个实施例中。因此，在本说明书的各种位置中，词组「在一实施例中」的出现未必是指本发明的相同实施例。此外，特定特征、结构、组态或特性可以任何适合方式组合在一个或多个实施例中。
本文所使用的术语「跨过」、「至」、「在......之间」及「在......上」可代表一个层相对于其他层的相对位置。「跨过」另一层、在另一层「上方」或在另一层「上」或黏合「至」另一层的一个层可与此另一层直接接触或可具有一或更多个介入层。各层「之间」的一个层可与各层直接接触或可具有一或更多个介入层。
图1是根据本发明的一些实施例的一种液体辅助黏合的方法100的流程图。图2是图1所示的方法100的一些实施例的流程图。图3A至图3E是根据本发明的一些实施例的图1和图2的方法100的中间阶段的剖面示意图。
请参考图1至图3E。液体辅助黏合的方法100开始于操作110，在元件240的电极242和基板210的接触垫220之间形成具有液体层230的结构S(请参考图3C和图3D)。液体层230的两相对表面分别与电极242和接触垫220接触。操作110可以以各种方式执行，且其中一种是在图2中示出，但并不以此为限。操作110开始于操作110-1，准备具有接触垫220在其上的基板210(请参考图3A)。操作110继续进行操作110-2，形成液体层230在基板210上(请参考图3B)。操作110继续进行操作110-3，放置元件240在接触垫220上方，元件240包括面向基板210上的接触垫220的电极242，使得元件240与液体层230接触(请参考图3C和图3D)。方法100继续进行操作120，蒸发液体层230，使得电极242贴附至且电性接触接触垫220(请参考图3E)。
尽管在前面段落中仅提到「一」元件240和「一」接触垫220，但是「多个」元件240和「多个」接触垫220可在实际应用中使用并仍在本发明的范围内，且不会在本发明中强调。
请参考图3B。在一些实施例中，液体层230形成在基板210和接触垫220上。在一些实施例中，接触垫220是导电的。在一些实施例中，接触垫220包括黏合材料。黏合材料包括锡、铟、钛或其组合中的一个。锡、铟和钛中的一个占黏合材料的原子数目的一半以上。在一些实施例中，接触垫220包括铜和富铜(copper-rich)材料中的一个。富铜材料是一种铜占其原子数目的一半以上的材料。虽然液体层230连续分布并覆盖基板210和接触垫220，如图3B所示，但液体层230也可不连续地分布在基板210上，例如覆盖在接触垫220上的如岛状液体层230。
在一些实施例中，液体层230包括水。在一些实施例中，液体层230借由在包括蒸气的环境中降低的基板210的温度来形成，使得至少一部分的蒸气凝结以形成液体层230。在一些实施例中，基板210的温度被降低至大约露点(dew point)以形成液体层230。在一些实施例中，液体层230借由喷洒蒸气至基板210上来形成，使得至少一部分的蒸气凝结以在基板210上形成液体层230。具体来说，蒸气包括水。在一些实施例中，喷洒蒸气的水蒸气压高于环境的水蒸气压。在一些实施例中，喷洒的蒸气基本上由氮和水组成。
请参考图3C和图3D，结构S被形成。在一些实施例中，当元件240与液体层230接触时，元件240被在元件240和接触垫220之间的至少一些部分的液体层230产生的毛细力抓住。氢键(将在之后的图4A中描述)在液体层230和电极242之间及/或在液体层230和接触垫220之间形成。在一些实施例中，氧化物离子键(oxide-ionic bonds)(将在之后的图4A中标注)也可在液体层230和电极242之间及/或在液体层230和接触垫220之间形成。在一些实施例中，元件240借由转移头250(请参考图3D)通过机械力(例如，黏着力)或电磁力(例如，静电力或是经由双极电极的交流电压产生的增强静电力)来放置，且不以此为限。在一些实施例中，当元件240由液体层230产生的毛细力抓住时，电极242和接触垫220之间的液体层230的部分的厚度小于元件240的厚度。在一些替代实施例中，可交换操作110-2和操作110-3之间的顺序。换句话说，先放置元件240在接触垫220上，然后在基板210上形成液体层230，且液体层230的一部分渗入至电极242和接触垫220之间的空间中，以通过毛细力抓住电极242和接触垫220。在一些其他替代实施例中，液体层230的形成可在元件240放置到接触垫220上之前和之后进行。在其他一些实施例中，当转移头250拾取元件240并准备将元件240接触至接触垫220时(也即，将元件240接触至接触垫220之前)，液体层230在元件240上与转移头250相对的一侧上形成。在一些实施例中，电极242包括黏合材料。黏合材料包括锡、铟、钛及其组合中的一个。锡、铟和钛中的一个占黏合材料的原子数目的一半以上。在一些实施例中，电极242包括铜和富铜材料中的一个。富铜材料是一种铜占其原子数目一半以上的材料。
请参考图3E。液体层230被蒸发以破坏所述的氢键及/或氧化物离子键，使得电极242面向接触垫220的表面2422和接触垫220面向电极242的表面2202的至少一个被活化，以便助于在元件240的电极242和接触垫220之间形成扩散黏合(diffusion bonding)。电极和接触垫之间的接触面积A1小于或等于约1平方毫米。具体来说，接触面积A1是借由电极242的表面2422与接触垫220的表面2202之间的接触形成。所述的接触面积A1的尺寸限制是为了确保毛细力的支配，如此一来有足够的趋势来活化表面2422和表面2202，以便助于形成扩散黏合。在一些实施例中，液体层230借由增加接触垫220的温度来蒸发，使得在液体层230蒸发之后电极242黏附固定至接触垫220。在一些实施例中，液体层230在约为液体层230的沸点的温度下蒸发。
请参考图4A和图4B。图4A是根据本发明的一些实施例的液体层230和电极242之间的接口及液体层230和接触垫220之间的界面的剖面放大示意图。图4B是根据本发明的一些实施例的在液体层230蒸发之后电极242面向接触垫220的表面2422和接触垫220面向电极242的表面2202的剖面放大示意图。当液体层230介于电极242和接触垫220之间时，由液体层230产生的毛细力将电极242和接触垫220保持在一起，且一些氢键2302-H1及/或氧化物离子键2302-O可形成在液体层230和接触垫220之间的界面上及液体层230和电极242之间的界面上。
图4A绘示的实施例以分子尺度显示了具有水分子2302的液体层230的剖面图。一些氢键2302-H1在液体层230和接触垫220与液体层230接触的表面2202的原子(分子)之间形成。一些氢键2302-H1在液体层230和电极242与液体层230接触的表面2422的原子(分子)之间形成。一些氢键2302-H2介于两个不同的水分子之间。一些氧化物离子键2302-O在液体层230和接触垫220与液体层230接触的表面2202的的原子(分子)之间形成。一些氧化物离子键2302-O在液体层230和电极242与液体层230接触的表面2422的原子(分子)之间形成。因此，由电极242、液体层230和接触垫220组成的系统的总能量降低了(更稳定)。当液体层230蒸发时(如图4B所示)，所述的较低能量倾向于活化在电极242的原子与接触垫220的原子之间的电子云重叠(也即，轨域重叠)的形成，然后在电极242和接触垫220之间形成贴附(binding)，以助于之后形成扩散黏合。
贴附之后的电极242和接触垫220之间的结构完整性强到足以将元件240保持在适当位置并形成电极242和接触垫220之间的电性接触。也该注意的是当元件240的侧向长度L1小于或等于约100微米时(也即，「微」元件240)，「液体辅助黏合」是较佳地有效的，因为较小的元件240的侧向长度导致较高的接触区域的周边长度与接触区域的面积(也即，接触面积A1)的比例，这有利于毛细力的影响并因此形成贴附。而且，对于元件240来说，所述的接触面积A1较佳地小于或等于约1平方毫米。若接触面积A1太大，则毛细力将太小而不能帮助在电极242的表面2422上的原子与接触垫220的表面2202上的原子之间的电子云重叠。鉴于上述说明，在一些辅助实施例中，电极242是包括至少两个隔离部分的图案化电极，且隔离部分彼此电性隔绝，以便增加接触区域的周边长度与接触区域的面积的比例。
在一些实施例中，电极242面向接触垫220的表面2422和接触垫220面向电极242的表面2202中的一个是亲水性的。这里的「亲水性」是指表面具有小于90度的接触角。亲水性表面2422和2202可借由用臭氧(O3)或过氧化氢溶液(H2O2)对表面2422和2202进行处理来形成，但并不以此为限。由于氢键2302-H1和氧化物离子键2302-O更可能在亲水性表面上形成，在液体层230和电极242之间及/或液体层230和接触垫220之间形成氢键2302-H1和氧化物离子键2302-O之后，势能(potential energy)变得更低(也即，更稳定或是更高的表面能(surface energy)。如此一来，当液体层230之后蒸发(或是一般来说，去除)时，电极242的表面2422上的原子和接触垫220的表面2202上的原子之电子云有更强的趋势会重叠，因此消除了由所述蒸发产生的表面。
请参考图5。图5是根据本发明的一些实施例的液体层230和电极242’之间的界面及液体层230和接触垫220’之间的界面的剖面示意图。在一些实施例中，电极242’面向接触垫220’的表面2422’和接触垫220’面向电极242’的表面2202’是在厚度方向TH上向上或向下弯曲的弯曲表面，借以增加接触区域的周边长度。厚度方向TH垂直于量测元件240的侧向长度L1的方向。
在一些实施例中，在蒸发液体层230之后，接触垫220的温度进一步增加至低于接触垫220和电极242之间的共晶点(eutectic point)并高于液体层230的沸点。所述「低于」意指着温度点低于共晶点(也是，接触垫220和电极242中的一个的熔点)，但足以在接触垫220和电极242之间引起间隙扩散(interstitial diffusion)，使得元件240「黏合」至接触垫220以增强电极242和接触垫220之间的坚固性。在这样的实施例中，由于较低温的黏合过程，元件240可被更好地保护(也即，在黏合过程中没有损坏)。此外，由于没有「熔化」，因此进一步增强了元件240在接触垫220上的位置精确度。
在一些其他实施例中，基板210被加热至低于电极242和接触垫220中的一个的熔点的温度点，以形成扩散黏合。电极242和接触垫220中的一个包括铜、钛、锡和铟中的至少一个，且电极和接触垫中的另一个包括导电氧化物。在一些实施例中，导电氧化物是氧化铟锡(indium tin oxide，ITO)。该注意的是，在传统的黏合制程中，没有这样的方法在低于所述熔点(例如，电极242和接触垫220中的一个具有较低的熔点的)的温度点将金属黏合至导电氧化物。
在一些实施例中，接触垫220的温度增加至一温度点使得间隙扩散发生以将电极242黏合至接触垫220。在其他一些实施例中，在蒸发液体层230之后，接触垫220的温度增加至高于接触垫220和电极242的共晶点。为了满足发生间隙扩散的标准和减小元件尺寸的趋势之间的平衡，电极242的厚度可以设定在约0.2微米至约2微米的范围内。
请参考图6。图6是根据本发明的一些实施例的液体辅助黏合的方法100中的选择性中间阶段的剖面示意图。在一些实施例中，在蒸发液体层230的期间，施加外部压力P以压缩电极242和接触垫220，以进一步协助将电极242接触至接触垫220，以在电极242和接触垫220之间发生更深的扩散黏合。施加外部压力P的方式可借由将附加板(例如，平板)放置在元件240上或是改变环境压力以压紧元件240和接触垫220，但并不以此为限。在一些实施例中，具有小于或等于约1个大气压(atm)值的外部压力P可在具有约0.1托尔(torr，约10-4atm)值的环境压力的空间(例如，反应室)内施加至元件240，但并不以此为限。
尽管已经参考本发明的某些实施例相当详细地描述了本发明，但是其他实施例也是可能的。因此，本发明的精神和范围不应限于这里包含的实施例的描述。
对于本领域技术人员显而易见的是，在不脱离本发明的范围或精神的情况下，可以对本发明的方法和结构进行各种修改和变化。鉴于前述内容，本发明旨在覆盖本发明的修改和变化，只要它们落入本发明的权利要求的范围内。

Claims (18)

1.一种液体辅助黏合方法，其特征在于，包括：
在元件的电极和基板的接触垫之间形成具有液体层的结构，且所述液体层的两相对表面分别与所述电极和所述接触垫接触，其中多个氢键在所述电极与所述接触垫的至少一个和所述液体层之间形成，且在形成所述结构之后，多个氧化物离子键在所述电极和所述液体层之间，或是在所述接触垫和所述液体层之间形成；以及
蒸发所述液体层以破坏所述氢键，使得所述电极面向所述接触垫的表面与所述接触垫面向所述电极的表面的至少一个被活化，以便助于在所述元件的所述电极和所述接触垫之间形成扩散黏合，其中所述电极和所述接触垫之间的接触面积小于或等于1平方毫米。
2.如权利要求1所述的方法，其特征在于，所述电极面向所述接触垫的所述表面与所述接触垫面向所述电极的所述表面为在厚度方向上向上或向下弯曲的弯曲表面。
3.如权利要求1所述的方法，其特征在于，还包括：
在蒸发所述液体层的期间施加外部压力以压缩所述电极和所述接触垫。
4.如权利要求1所述的方法，其特征在于，还包括：
加热所述基板至低于所述电极和所述接触垫的共晶点且高于所述液体层的沸点的温度点以形成所述扩散黏合，其中所述电极和所述接触垫包括金属，且所述电极和所述接触垫的至少一个包括铜、钛、锡和铟中的至少一个。
5.如权利要求1所述的方法，其特征在于，还包括：
加热所述基板至低于所述电极和所述接触垫中的一个的熔点的温度点以形成所述扩散黏合，其中所述电极和所述接触垫中的一个包括铜、钛、锡和铟中的至少一个，且所述电极和所述接触垫中的另一个包括导电氧化物。
6.如权利要求1所述的方法，其特征在于，所述元件的侧向长度小于或等于100微米。
7.如权利要求1所述的方法，其特征在于，当所述液体层蒸发时，所述氧化物离子键断裂。
8.如权利要求1所述的方法，其特征在于，所述电极面向所述接触垫的所述表面与所述接触垫面向所述电极的所述表面中的一个是亲水性的。
9.一种液体辅助黏合方法，其特征在于，包括：
在元件的电极和基板的接触垫之间形成具有液体层的结构，且所述液体层的两相对表面分别与所述电极和所述接触垫接触，其中多个氢键在所述电极与所述接触垫的至少一个和所述液体层之间形成，且在形成所述结构之后，多个氧化物离子键在所述电极和所述液体层之间，或是在所述接触垫和所述液体层之间形成；
蒸发所述液体层以破坏所述氢键，使得所述电极面向所述接触垫的表面与所述接触垫面向所述电极的表面的至少一个被活化，以便助于在所述元件的所述电极和所述接触垫之间形成扩散黏合；及
加热所述基板至低于所述电极和所述接触垫中的一个的熔点的温度点以形成该扩散黏合，其中所述电极和所述接触垫中的所述一个包括铜、钛、锡和铟中的至少一个，且所述电极和所述接触垫中的另一个包括导电氧化物。
10.如权利要求9所述的方法，其特征在于，所述电极和所述接触垫之间的接触面积小于或等于1平方毫米。
11.如权利要求9所述的方法，其特征在于，所述电极面向所述接触垫的所述表面与所述接触垫面向所述电极的所述表面为在厚度方向上向上或向下弯曲的弯曲表面。
12.如权利要求9所述的方法，其特征在于，还包括：
在蒸发所述液体层的期间施加外部压力以压缩所述电极和所述接触垫。
13.如权利要求9所述的方法，其特征在于，铜、锡、铟和钛中的一个占所述电极和所述接触垫的至少一个中的原子数目的一半以上。
14.如权利要求9所述的方法，其特征在于，所述元件的侧向长度小于或等于100微米。
15.如权利要求9所述的方法，其特征在于，当所述液体层蒸发时，所述氧化物离子键断裂。
16.如权利要求9所述的方法，其特征在于，所述电极面向所述接触垫的所述表面与所述接触垫面向所述电极的所述表面中的一个是亲水性的。
17.如权利要求9所述的方法，其特征在于，蒸发所述液体层是在所述液体层的沸点的温度下进行。
18.如权利要求9所述的方法，其特征在于，轨域重叠在所述电极和所述接触垫之间形成，以便助于在所述元件的所述电极和所述接触垫之间形成所述扩散黏合。
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