TW202102326A - 液體輔助黏合方法 - Google Patents

液體輔助黏合方法 Download PDF

Info

Publication number
TW202102326A
TW202102326A TW108139116A TW108139116A TW202102326A TW 202102326 A TW202102326 A TW 202102326A TW 108139116 A TW108139116 A TW 108139116A TW 108139116 A TW108139116 A TW 108139116A TW 202102326 A TW202102326 A TW 202102326A
Authority
TW
Taiwan
Prior art keywords
electrode
contact pad
liquid layer
contact
facing
Prior art date
Application number
TW108139116A
Other languages
English (en)
Other versions
TWI735994B (zh
Inventor
陳立宜
Original Assignee
薩摩亞商美科米尚技術有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 薩摩亞商美科米尚技術有限公司 filed Critical 薩摩亞商美科米尚技術有限公司
Publication of TW202102326A publication Critical patent/TW202102326A/zh
Application granted granted Critical
Publication of TWI735994B publication Critical patent/TWI735994B/zh

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04026—Bonding areas specifically adapted for layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0556—Disposition
    • H01L2224/05568—Disposition the whole external layer protruding from the surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05647—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/29109—Indium [In] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/29111—Tin [Sn] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29147—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/29166—Titanium [Ti] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/751—Means for controlling the bonding environment, e.g. valves, vacuum pumps
    • H01L2224/75101—Chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/757—Means for aligning
    • H01L2224/75703—Mechanical holding means
    • H01L2224/75705—Mechanical holding means in the upper part of the bonding apparatus, e.g. in the bonding head
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/757—Means for aligning
    • H01L2224/75723—Electrostatic holding means
    • H01L2224/75725—Electrostatic holding means in the upper part of the bonding apparatus, e.g. in the bonding head
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/83001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector involving a temporary auxiliary member not forming part of the bonding apparatus
    • H01L2224/83002—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector involving a temporary auxiliary member not forming part of the bonding apparatus being a removable or sacrificial coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/83007—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector involving a permanent auxiliary member being left in the finished device, e.g. aids for holding or protecting the layer connector during or after the bonding process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8312—Aligning
    • H01L2224/83143—Passive alignment, i.e. self alignment, e.g. using surface energy, chemical reactions, thermal equilibrium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83193—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed on both the semiconductor or solid-state body and another item or body to be connected to the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/832—Applying energy for connecting
    • H01L2224/83201—Compression bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/832—Applying energy for connecting
    • H01L2224/83201—Compression bonding
    • H01L2224/83203—Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8334—Bonding interfaces of the layer connector
    • H01L2224/83359—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/83801—Soldering or alloying
    • H01L2224/8382—Diffusion bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/83801—Soldering or alloying
    • H01L2224/8382—Diffusion bonding
    • H01L2224/83825—Solid-liquid interdiffusion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/83801—Soldering or alloying
    • H01L2224/8382—Diffusion bonding
    • H01L2224/8383—Solid-solid interdiffusion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01022—Titanium [Ti]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01049—Indium [In]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0105—Tin [Sn]

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)

Abstract

一種液體輔助黏合方法包括：在元件的電極和基板的接觸墊之間形成具有液體層的結構，且液體層的兩相對表面分別與電極和接觸墊接觸，其中氫鍵係在電極與接觸墊之至少一者和液體層之間形成；及蒸發液體層以破壞氫鍵，使得電極面向接觸墊的表面與接觸墊面向電極的表面之至少一者被活化，以便助於在元件的電極和接觸墊之間形成擴散黏合，其中電極和接觸墊之間的接觸面積小於或等於約1平方毫米。

Description

液體輔助黏合方法
本揭露是有關於一種液體輔助黏合方法。
本節中的陳述僅提供與本揭露內容相關的背景資訊，並不一定構成現有技術。
用於轉移元件的傳統技術包括藉由晶圓黏合(wafer bonding)將元件從轉移晶圓(transfer wafer)轉移至接收基板(receiving substrate)。一種這樣的實施方式是「直接黏合」(direct bonding)，其涉及將元件陣列從轉移晶圓黏合至接收基板的一個黏合階段，接著再移除轉移晶圓。另一種這樣的實施方式是「間接黏合」(indirect bonding)，其涉及兩個黏合/剝離(de-bonding)階段。在間接黏合中，轉移頭可從供體基板(donor substrate)拾取元件陣列，然後將元件陣列黏合至接收基板，接著再移除轉移頭。
近年來，許多研究人員和專家試圖克服在可用於商業應用中的元件進行大量轉移(亦即，轉移數百萬或數千萬元件)的難題。在這些難題中，降低成本、時間效率和良率是 三個重要的議題。
根據本揭露之一些實施方式係提供一種液體輔助黏合方法。所述方法包含：在元件的電極和基板的接觸墊之間形成具有液體層的結構，且液體層的兩相對表面分別與電極和接觸墊接觸，其中氫鍵係在電極與接觸墊之至少一者和液體層之間形成；以及蒸發液體層以破壞氫鍵，使得電極面向接觸墊的表面與接觸墊面向電極的表面之至少一者被活化，以便助於在元件的電極和接觸墊之間形成擴散黏合，其中電極和接觸墊之間的接觸面積小於或等於約1平方毫米。
根據本揭露之一些實施方式係提供一種液體輔助黏合方法。所述方法包含：在元件的電極和基板的接觸墊之間形成具有液體層的結構，且液體層的兩相對表面分別與電極和接觸墊接觸，其中氫鍵係在電極與接觸墊之至少一者和液體層之間形成；蒸發液體層以破壞氫鍵，使得電極面向接觸墊的表面與接觸墊面向電極的表面之至少一者被活化，以便助於在元件的電極和接觸墊之間形成擴散黏合；及加熱基板至低於電極和接觸墊之一者的熔點之溫度點以形成擴散黏合，其中電極和接觸墊之所述一者包括銅、鈦、錫和銦中的至少一者，且電極和接觸墊之另一者包括導電氧化物。
為了讓本揭露的上述特徵和優點能更明顯易懂，下文特舉實施例，並配合所附圖式作詳細說明如下。
100‧‧‧方法
110、120、110-1、110-2、110-3‧‧‧操作
210‧‧‧基板
220、220’‧‧‧接觸墊
2202、2202’‧‧‧表面
230‧‧‧液體層
2302‧‧‧水分子
2302-H1、2302-H2‧‧‧氫鍵
2302-O‧‧‧氧化物離子鍵
240‧‧‧元件
242、242’‧‧‧電極
2422、2422’‧‧‧表面
250‧‧‧轉移頭
S‧‧‧結構
A1‧‧‧接觸面積
L1‧‧‧側向長度
TH‧‧‧厚度方向
P‧‧‧外部壓力
當結合隨附圖式閱讀時，自以下詳細描述將最佳地理解本揭露之態樣。應注意，根據工業中之標準實務，各特徵未必依比例繪示。實際上，可出於論述清晰之目的而增減所說明的特徵之尺寸。
第1圖係根據本揭露的一些實施例的一種液體輔助黏合方法之流程圖；
第2圖係液體輔助黏合方法根據本揭露的一些實施例之流程圖；
第3A圖係根據本揭露的一些實施例的液體輔助黏合方法的中間階段之示意剖面圖；
第3B圖係根據本揭露的一些實施例的液體輔助黏合方法的中間階段之示意剖面圖；
第3C圖係根據本揭露的一些實施例的液體輔助黏合方法的中間階段之示意剖面圖；
第3C’圖係根據本揭露的一些實施例的液體輔助黏合方法的中間階段之示意剖面圖；
第3D圖係根據本揭露的一些實施例的液體輔助黏合方法的中間階段之示意剖面圖；
第4A圖係根據本揭露的一些實施例的液體層和電極之間的介面及液體層和接觸墊之間的界面之示意放大剖面圖；
第4B圖係根據本揭露的一些實施例在電極和接觸墊之間的液體層蒸發之後電極面向接觸墊和接觸墊面向電極之示意放大剖面圖；
第5圖係根據本揭露的一些實施例的液體層和電極之間的界面及液體層和接觸墊之間的界面的示意剖面圖；及
第6圖係根據本揭露的一些實施例的液體輔助黏合方法中的選擇性中間階段之示意剖面圖。
現在將詳細地描述本揭露之實施例，其示例係繪示在附圖中。只要可能，相同的參考標號標記在圖式和說明書中，意指相同或相似的部件。
在各種實施例中，描述係參考圖式來進行。然而，可在無此等特定細節之一者或多者之情況下或與其他已知方法及組態組合地實踐某些實施例。在以下描述中，闡述諸多特定細節(諸如特定組態、尺寸及程序等等)以提供本揭露之一徹底理解。在其他例項中，未特別詳細地描述熟知半導體程序及製造技術以非不必要地使本揭露不清楚。在本說明書中，參考「一實施例」意指：結合該實施例所描述之一特定特徵、結構、組態或特性包含於本揭露之至少一實施例中。因此，在本說明書之各種位置中，片語「在一實施例中」之出現未必係指本揭露之相同實施例。此外，特定特徵、結構、組態或特性可以任何適合方式組合於一個或多個實施例中。
本文所使用的術語「跨過」、「至」、「在......之間」及「在......上」可代表一個層相對於其他層的相對位置。「跨過」另一層、在另一層「上方」或在另一層「上」或黏合「至」另一層的一個層可與此另一層直接接觸或可具有一或更 多個介入層。各層「之間」的一個層可與各層直接接觸或可具有一或更多個介入層。
第1圖係根據本揭露的一些實施例的一種液體輔助黏合的方法100之流程圖。第2圖係第1圖所示的方法100的一些實施例之流程圖。第3A圖至第3D圖係根據本揭露的一些實施例的第1圖和第2圖的方法100的中間階段之示意剖面圖。
請參考第1圖至第3D圖。液體輔助黏合的方法100開始於操作110，在元件240的電極242和基板210的接觸墊220之間形成具有液體層230的結構S(請參考第3C圖和第3C’圖)。液體層230的兩相對表面分別與電極242和接觸墊220接觸。操作110可以以各種方式執行，且其中一種係在第2圖中示出，但並不以此為限。操作110開始於操作110-1，準備具有接觸墊220在其上的基板210(請參考第3A圖)。操作110繼續進行操作110-2，形成液體層230在基板210上(請參考第3B圖)。操作110繼續進行操作110-3，放置元件240在接觸墊220上方，元件240包括面向基板210上的接觸墊220的電極242，使得元件240與液體層230接觸(請參考第3C圖和第3C’圖)。方法100繼續進行操作120，蒸發液體層230，使得電極242貼附至且電性接觸接觸墊220(請參考第3D圖)。
儘管在前面段落中僅提到「一」元件240和「一」接觸墊220，但是「多個」元件240和「多個」接觸墊220可在實際應用中使用並仍在本揭露的範圍內，且不會在本揭露中強調。
請參考第3B圖。在一些實施例中，液體層230形 成在基板210和接觸墊220上。在一些實施例中，接觸墊220是導電的。在一些實施例中，接觸墊220包括黏合材料。黏合材料包括錫、銦、鈦或其組合中的一者。錫、銦和鈦中的一者佔黏合材料的原子數目的一半以上。在一些實施例中，接觸墊220包括銅和富銅(copper-rich)材料中的一者。富銅材料是一種銅佔其中原子數目的一半以上的材料。雖然液體層230連續分佈並覆蓋基板210和接觸墊220，如第3B圖所示，但液體層230也可不連續地分佈在基板210上，例如覆蓋在接觸墊220上的如島狀液體層230。
在一些實施例中，液體層230包括水。在一些實施例中，液體層230藉由在包括蒸氣的環境中降低的基板210的溫度來形成，使得至少一部分的蒸氣凝結以形成液體層230。在一些實施例中，基板210的溫度被降低至大約露點(dew point)以形成液體層230。在一些實施例中，液體層230藉由噴灑蒸氣至基板210上來形成，使得至少一部分的蒸氣凝結以在基板210上形成液體層230。具體來說，蒸氣包括水。在一些實施例中，噴灑蒸氣的水蒸氣壓高於環境的水蒸氣壓。在一些實施例中，噴灑的蒸氣基本上由氮和水組成。
請參考第3C圖和第3C’圖，結構S被形成。在一些實施例中，當元件240與液體層230接觸時，元件240被在元件240和接觸墊220之間的至少一些部分的液體層230產生的毛細力抓住。氫鍵(將在之後的第4A圖中描述)在液體層230和電極242之間及/或在液體層230和接觸墊220之間形成。在一些實施例中，氧化物離子鍵(oxide-ionic bonds)(將在 之後的第4A圖中標註)亦可在液體層230和電極242之間及/或在液體層230和接觸墊220之間形成。在一些實施例中，元件240藉由轉移頭250(請參考第3C’圖)透過機械力(例如，黏著力)或電磁力(例如，靜電力或是經由雙極電極的交流電壓產生的增強靜電力)來放置，且不以此為限。在一些實施例中，當元件240由液體層230產生的毛細力抓住時，電極242和接觸墊220之間的液體層230之部分的厚度小於元件240的厚度。在一些替代實施例中，可交換操作110-2和操作110-3之間的順序。換句話說，先放置元件240在接觸墊220上，然後在基板210上形成液體層230，且液體層230的一部分滲入至電極242和接觸墊220之間的空間中，以透過毛細力抓住電極242和接觸墊220。在一些其他替代實施例中，液體層230的形成可在元件240放置到接觸墊220上之前和之後進行。在其他一些實施例中，當轉移頭250拾取元件240並準備將元件240接觸至接觸墊220時(亦即，將元件240接觸至接觸墊220之前)，液體層230在元件240上與轉移頭250相對的一側上形成。在一些實施例中，電極242包括黏合材料。黏合材料包括錫、銦、鈦及其組合中的一者。錫、銦和鈦中的一者佔黏合材料的原子數目的一半以上。在一些實施例中，電極242包括銅和富銅材料中的一者。富銅材料是一種銅佔其中原子數目一半以上的材料。
請參考第3D圖。液體層230被蒸發以破壞所述的氫鍵及/或氧化物離子鍵，使得電極242面向接觸墊220的表面2422和接觸墊220面向電極242的表面2202之至少一者被活 化，以便助於在元件240的電極242和接觸墊220之間形成擴散黏合(diffusion bonding)。電極和接觸墊之間的接觸面積A1小於或等於約1平方毫米。具體來說，接觸面積A1是藉由電極242的表面2422與接觸墊220的表面2202之間的接觸形成。所述的接觸面積A1的尺寸限制是為了確保毛細力的支配，如此一來有足夠的趨勢來活化表面2422和表面2202，以便助於形成擴散黏合。在一些實施例中，液體層230藉由增加接觸墊220的溫度來蒸發，使得在液體層230蒸發之後電極242黏附固定至接觸墊220。在一些實施例中，液體層230在約為液體層230之沸點的溫度下蒸發。
請參考第4A圖和第4B圖。第4A圖係根據本揭露的一些實施例的液體層230和電極242之間的介面及液體層230和接觸墊220之間的界面之示意放大剖面圖。第4B圖係根據本揭露的一些實施例的在液體層230蒸發之後電極242面向接觸墊220的表面2422和接觸墊220面向電極242的表面2202之示意放大剖面圖。當液體層230介於電極242和接觸墊220之間時，由液體層230產生的毛細力將電極242和接觸墊220保持在一起，且一些氫鍵2302-H1及/或氧化物離子鍵2302-O可形成在液體層230和接觸墊220之間的界面上及液體層230和電極242之間的界面上。
第4A圖繪示的實施例以分子尺度顯示了具有水分子2302的液體層230之剖面圖。一些氫鍵2302-H1在液體層230和接觸墊220與液體層230接觸的表面2202的原子(分子)之間形成。一些氫鍵2302-H1在液體層230和電極242與液體 層230接觸的表面2422的原子(分子)之間形成。一些氫鍵2302-H2介於兩個不同的水分子之間。一些氧化物離子鍵2302-O在液體層230和接觸墊220與液體層230接觸的表面2202的的原子(分子)之間形成。一些氧化物離子鍵2302-O在液體層230和電極242與液體層230接觸的表面2422的原子(分子)之間形成。因此，由電極242、液體層230和接觸墊220組成的系統之總能量降低了(更穩定)。當液體層230蒸發時(如第4B圖所示)，所述的較低能量傾向於活化在電極242的原子與接觸墊220的原子之間的電子雲重疊(亦即，軌域重疊)之形成，然後在電極242和接觸墊220之間形成貼附(binding)，以助於之後形成擴散黏合。
貼附之後的電極242和接觸墊220之間的結構完整性強到足以將元件240保持在適當位置並形成電極242和接觸墊220之間的電性接觸。亦該注意的是當元件240的側向長度L1小於或等於約100微米時(亦即，「微」元件240)，「液體輔助黏合」係較佳地有效的，因為較小的元件240的側向長度導致較高的接觸區域的周邊長度與接觸區域的面積(亦即，接觸面積A1)之比例，這有利於毛細力的影響並因此形成貼附。而且，對於一元件240來說，所述的接觸面積A1較佳地小於或等於約1平方毫米。若接觸面積A1太大，則毛細力將太小而不能幫助在電極242的表面2422上的原子與接觸墊220的表面2202上的原子之間的電子雲重疊。鑑於上述說明，在一些輔助實施例中，電極242是包括至少兩個隔離部分的圖案化電極，且隔離部分彼此電性隔絕，以便增加接觸區域的周邊長度 與接觸區域的面積之比例。
在一些實施例中，電極242面向接觸墊220的表面2422和接觸墊220面向電極242的表面2202之一者是親水性的。這裡的「親水性」係指表面具有小於90度的接觸角。親水性表面2422和2202可藉由用臭氧(O3)或過氧化氫溶液(H2O2)對表面2422和2202進行處理來形成，但並不以此為限。由於氫鍵2302-H1和氧化物離子鍵2302-O更可能在親水性表面上形成，在液體層230和電極242之間及/或液體層230和接觸墊220之間形成氫鍵2302-H1和氧化物離子鍵2302-O之後，勢能(potential energy)變得更低(亦即，更穩定或是更高的表面能(surface energy)。如此一來，當液體層230之後蒸發(或是一般來說，去除)時，電極242的表面2422上的原子和接觸墊220的表面2202上的原子之電子雲有更強的趨勢會重疊，因此消除了由所述蒸發產生的表面。
請參考第5圖。第5圖係根據本揭露的一些實施例的液體層230和電極242’之間的界面及液體層230和接觸墊220’之間的界面的示意剖面圖。在一些實施例中，電極242’面向接觸墊220’的表面2422’和接觸墊220’面向電極242’的表面2202’是在厚度方向TH上向上或向下彎曲的彎曲表面，藉以增加接觸區域的周邊長度。厚度方向TH垂直於量測元件240的側向長度L1的方向。
在一些實施例中，在蒸發液體層230之後，接觸墊220的溫度進一步增加至低於接觸墊220和電極242之間的共晶點(eutectic point)並高於液體層230的沸點。所述「低 於」意指著溫度點低於共晶點(亦是，接觸墊220和電極242之一者的熔點)，但足以在接觸墊220和電極242之間引起間隙擴散(interstitial diffusion)，使得元件240「黏合」至接觸墊220以增強電極242和接觸墊220之間的堅固性。在這樣的實施例中，由於較低溫的黏合過程，元件240可被更好地保護(亦即，在黏合過程中沒有損壞)。此外，由於沒有「熔化」，因此進一步增強了元件240在接觸墊220上的位置精確度。
在一些其他實施例中，基板210被加熱至低於電極242和接觸墊220之一者的熔點的溫度點，以形成擴散黏合。電極242和接觸墊220之一者包括銅、鈦、錫和銦中的至少一者，且電極和接觸墊之另一者包括導電氧化物。在一些實施例中，導電氧化物是氧化銦錫(indium tin oxide，ITO)。該注意的是，在傳統的黏合製程中，沒有這樣的方法在低於所述熔點(例如，電極242和接觸墊220之一者具有較低的熔點的)的溫度點將金屬黏合至導電氧化物。
在一些實施例中，接觸墊220的溫度增加至一溫度點使得間隙擴散發生以將電極242黏合至接觸墊220。在其他一些實施例中，在蒸發液體層230之後，接觸墊220的溫度增加至高於接觸墊220和電極242的共晶點。為了滿足發生間隙擴散的標準和減小元件尺寸的趨勢之間的平衡，電極242的厚度可以設定在約0.2微米至約2微米的範圍內。
請參考第6圖。第6圖係根據本揭露的一些實施例的液體輔助黏合的方法100中的選擇性中間階段之示意剖面圖。在一些實施例中，在蒸發液體層230的期間，施加外部壓 力P以壓縮電極242和接觸墊220，以進一步協助將電極242接觸至接觸墊220，以在電極242和接觸墊220之間發生更深的擴散黏合。施加外部壓力P的方式可藉由將附加板(例如，平板)放置在元件240上或是改變環境壓力以壓緊元件240和接觸墊220，但並不以此為限。在一些實施例中，具有小於或等於約1個大氣壓(atm)值的外部壓力P可在具有約0.1托爾(torr，約10-4atm)值的環境壓力的空間(例如，反應室)內施加至元件240，但並不以此為限。
儘管已經參考本揭露的某些實施例相當詳細地描述了本揭露，但是其他實施例也是可能的。因此，所附請求項的精神和範圍不應限於這裡包含的實施例的描述。
對於本領域技術人員顯而易見的是，在不脫離本揭露的範圍或精神的情況下，可以對本揭露的方法和結構進行各種修改和變化。鑑於前述內容，本揭露旨在覆蓋本揭露的修改和變化，只要它們落入所附請求項的範圍內。
220‧‧‧接觸墊
2202‧‧‧表面
230‧‧‧液體層
2302‧‧‧水分子
2302-H1、2302-H2‧‧‧氫鍵
2302-O‧‧‧氧化物離子鍵
242‧‧‧電極
2422‧‧‧表面

Claims (20)

  1. 一種液體輔助黏合方法，包括：
    在一元件的一電極和一基板的一接觸墊之間形成具有一液體層的一結構，且該液體層的兩相對表面分別與該電極和該接觸墊接觸，其中複數個氫鍵係在該電極與該接觸墊之至少一者和該液體層之間形成；以及
    蒸發該液體層以破壞該些氫鍵，使得該電極面向該接觸墊的一表面與該接觸墊面向該電極的一表面之至少一者被活化，以便助於在該元件的該電極和該接觸墊之間形成擴散黏合，其中該電極和該接觸墊之間的接觸面積小於或等於約1平方毫米。
  2. 如請求項1所述的方法，其中該電極面向該接觸墊的該表面與該接觸墊面向該電極的該表面係為在厚度方向上向上或向下彎曲的一彎曲表面。
  3. 如請求項1所述的方法，還包括：
    在蒸發該液體層的期間施加一外部壓力以壓縮該電極和該接觸墊。
  4. 如請求項1所述的方法，還包括：
    加熱該基板至低於該電極和該接觸墊的共晶點且高於該液體層的沸點之溫度點以形成該擴散黏合，其中該電極和該接觸墊包括金屬，且該電極和該接觸墊之至少一者包括銅、 鈦、錫和銦中的至少一者。
  5. 如請求項1所述的方法，還包括：
    加熱該基板至低於該電極和該接觸墊之一者的熔點之溫度點以形成該擴散黏合，其中該電極和該接觸墊之一者包括銅、鈦、錫和銦中的至少一者，且該電極和該接觸墊之另一者包括導電氧化物。
  6. 如請求項1所述的方法，其中該元件的側向長度小於或等於約100微米。
  7. 如請求項1所述的方法，其中在形成該結構之後，複數個氧化物離子鍵係在該電極和該液體層之間，或是在該接觸墊和該液體層之間形成。
  8. 如請求項7所述的方法，其中當該液體層蒸發時，該些氧化物離子鍵斷裂。
  9. 如請求項1所述的方法，其中該電極面向該接觸墊的該表面與該接觸墊面向該電極的該表面之一者係親水性的。
  10. 一種液體輔助黏合方法，包括：
    在一元件的一電極和一基板的一接觸墊之間形成具有一 液體層的一結構，且該液體層的兩相對表面分別與該電極和該接觸墊接觸，其中複數個氫鍵係在該電極與該接觸墊之至少一者和該液體層之間形成；
    蒸發該液體層以破壞該些氫鍵，使得該電極面向該接觸墊的一表面與該接觸墊面向該電極的一表面之至少一者被活化，以便助於在該元件的該電極和該接觸墊之間形成擴散黏合；以及
    加熱該基板至低於該電極和該接觸墊之一者的熔點之溫度點以形成該擴散黏合，其中該電極和該接觸墊之該一者包括銅、鈦、錫和銦中的至少一者，且該電極和該接觸墊之另一者包括導電氧化物。
  11. 如請求項10所述的方法，其中該電極和該接觸墊之間的接觸面積小於或等於約1平方毫米。
  12. 如請求項10所述的方法，其中該電極面向該接觸墊的該表面與該接觸墊面向該電極的該表面係為在厚度方向上向上或向下彎曲的一彎曲表面。
  13. 如請求項10所述的方法，還包括：
    在蒸發該液體層的期間施加一外部壓力以壓縮該電極和該接觸墊。
  14. 如請求項10所述的方法，其中銅、錫、銦 和鈦中的一者佔該電極和該接觸墊之至少一者中的原子數目的一半以上。
  15. 如請求項10所述的方法，其中該元件的側向長度小於或等於約100微米。
  16. 如請求項10所述的方法，其中在形成該結構之後，複數個氧化物離子鍵係在該電極和該液體層之間，或是在該接觸墊和該液體層之間形成。
  17. 如請求項16所述的方法，其中當該液體層蒸發時，該些氧化物離子鍵斷裂。
  18. 如請求項10所述的方法，其中該電極面向該接觸墊的該表面與該接觸墊面向該電極的該表面之一者係親水性的。
  19. 如請求項10所述的方法，其中蒸發該液體層係在約為該液體層之沸點的溫度下進行。
  20. 如請求項10所述的方法，其中一軌域重疊係在該電極和該接觸墊之間形成，以便助於在該元件的該電極和該接觸墊之間形成該擴散黏合。
TW108139116A 2019-07-09 2019-10-29 液體輔助黏合方法 TWI735994B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US16/505,716 US10971472B2 (en) 2019-07-09 2019-07-09 Method of liquid assisted bonding
US16/505,716 2019-07-09

Publications (2)

Publication Number Publication Date
TW202102326A true TW202102326A (zh) 2021-01-16
TWI735994B TWI735994B (zh) 2021-08-11

Family

ID=74047961

Family Applications (1)

Application Number Title Priority Date Filing Date
TW108139116A TWI735994B (zh) 2019-07-09 2019-10-29 液體輔助黏合方法

Country Status (3)

Country Link
US (1) US10971472B2 (zh)
CN (1) CN112216642B (zh)
TW (1) TWI735994B (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110707186A (zh) * 2019-10-21 2020-01-17 深圳市华星光电半导体显示技术有限公司 Led显示面板的制备方法
CN114420549B (zh) * 2022-03-31 2022-11-18 深圳新声半导体有限公司 一种二氧化硅表面与硅表面低温键合的方法

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5122441A (en) * 1990-10-29 1992-06-16 E. I. Du Pont De Nemours And Company Method for fabricating an integral three-dimensional object from layers of a photoformable composition
US5653019A (en) * 1995-08-31 1997-08-05 Regents Of The University Of California Repairable chip bonding/interconnect process
US5918794A (en) * 1995-12-28 1999-07-06 Lucent Technologies Inc. Solder bonding of dense arrays of microminiature contact pads
JP3298451B2 (ja) * 1997-03-28 2002-07-02 三菱電機株式会社 液晶パネルの製造方法
US6902987B1 (en) * 2000-02-16 2005-06-07 Ziptronix, Inc. Method for low temperature bonding and bonded structure
US7504155B2 (en) * 2003-02-28 2009-03-17 Board Of Regents, The University Of Texas System Suppression of chemical reactivity on semiconductor surfaces
US7109092B2 (en) * 2003-05-19 2006-09-19 Ziptronix, Inc. Method of room temperature covalent bonding
JP2007103817A (ja) * 2005-10-07 2007-04-19 Citizen Watch Co Ltd 半田ボール配列マスクおよびそれを用いた半導体装置の製造方法
US8222116B2 (en) * 2006-03-03 2012-07-17 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US7847335B2 (en) * 2006-04-11 2010-12-07 Taiwan Semiconductor Manufacturing Company, Ltd. Non-volatile memory device having a generally L-shaped cross-section sidewall SONOS
CA2655340C (en) * 2006-06-12 2016-10-25 President And Fellows Of Harvard College Nanosensors and related technologies
US20100180927A1 (en) * 2008-08-27 2010-07-22 Stion Corporation Affixing method and solar decal device using a thin film photovoltaic and interconnect structures
US20120097329A1 (en) * 2010-05-21 2012-04-26 Merck Patent Gesellschaft Stencils for High-Throughput Micron-Scale Etching of Substrates and Processes of Making and Using the Same
JP2014529343A (ja) 2011-07-27 2014-11-06 メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ Ｇｅｓｅｌｌｓｃｈａｆｔ ｍｉｔ ｂｅｓｃｈｒａｅｎｋｔｅｒ Ｈａｆｔｕｎｇ 小分子および有機半導体としてのそれらの使用
US20140283982A1 (en) * 2011-10-21 2014-09-25 The Regents Of The University Of California Universal nanopatternable interfacial bonding
JP6337400B2 (ja) * 2012-04-24 2018-06-06 須賀　唯知 チップオンウエハ接合方法及び接合装置並びにチップとウエハとを含む構造体
US10510576B2 (en) * 2013-10-14 2019-12-17 Corning Incorporated Carrier-bonding methods and articles for semiconductor and interposer processing
KR102195254B1 (ko) * 2013-12-30 2020-12-28 삼성디스플레이 주식회사 표시 장치 제조 방법
DE102014207837A1 (de) * 2014-04-25 2015-10-29 Tesa Se Dünnglasverbund und Verfahren zur Lagerung von Dünnglas
US10141475B1 (en) * 2017-12-24 2018-11-27 Mikro Mesa Technology Co., Ltd. Method for binding micro device to conductive pad
US10312218B1 (en) * 2018-07-20 2019-06-04 Mikro Mesa Technology Co., Ltd. Method for binding micro device to substrate

Also Published As

Publication number Publication date
US20210013174A1 (en) 2021-01-14
CN112216642A (zh) 2021-01-12
CN112216642B (zh) 2023-10-27
TWI735994B (zh) 2021-08-11
US10971472B2 (en) 2021-04-06

Similar Documents

Publication Publication Date Title
TWI735994B (zh) 液體輔助黏合方法
US20210015011A1 (en) Method for replacing or patching element of display device
JPH0897389A (ja) 基板上に半導体薄膜を有する構造の製造方法
TW200300595A (en) Encapsulation of electronic devices
TWI705741B (zh) 貼附微型元件至基板上的方法
US10797009B1 (en) Method for transferring micro device
TWI717941B (zh) 轉移微型元件的方法
TWI628079B (zh) 玻璃基板的製造方法
US10964662B2 (en) Method of transferring micro device
US20200335463A1 (en) Electrical binding structure and method of forming the same
TWI718733B (zh) 液體輔助貼附方法
KR20150031399A (ko) 지지 기판을 이용한 플렉서블 소자 패키징 방법 및 이에 의하여 제조된 플렉서블 소자
CN113380615A (zh) 一种集成电路晶圆背面处理工艺
US20220102223A1 (en) Method for replacing or patching element of display device
TWI735955B (zh) 限制微型元件於導電墊上的方法
US10916518B2 (en) Electrical binding structure and method of forming the same
TWI794692B (zh) 處理微型裝置的方法
US10672736B1 (en) Method of liquid assisted micro cold binding