CN113380615A - 一种集成电路晶圆背面处理工艺 - Google Patents
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Abstract
本发明公开了一种集成电路晶圆背面处理工艺，本发明的有益效果：通过在晶圆减薄的工序前增加一道贴玻璃工序，提高了晶圆的整体支撑力，提高成品率，可以将晶圆厚度降低，可以明显降低接触电阻，降低热阻，提高芯片性能；本工艺中选用钛作为底层与晶圆直接接触，另外选用镍和银作为导电金属，利用电子束的方式分别加热钛、镍、银，使钛、镍、银蒸发并依次沉积在晶圆表面，将源极或漏极导出；通过电化学的方式来增加金属银层厚度，可以将金属银层的厚度提高到80um左右，同时保证金属层的结合力和金属层厚度均匀；晶圆背面贴膜可保护去除晶圆表面玻璃时对晶圆损伤，同时对晶圆划片切割作准备。
Description
技术领域：
本发明属于晶圆处理技术领域，特别涉及一种集成电路晶圆背面处理工艺。
背景技术：
晶圆是指制作硅半导体电路所用的硅晶片，是芯片生产过程中的其中一个极为重要的环节，晶圆的好坏会直接影响器件控制电路的优劣。
现有技术中，由于芯片的厚度很薄，晶圆整体强度下降，存在一定的破片率，同时，利用机械磨加化学研磨液的方式减薄晶圆后，晶圆表面会产生轻微裂纹，造成一定程度的消耗。
发明内容：
本发明的目的就在于为了解决上述问题而提供一种集成电路晶圆背面处理工艺。
为了解决上述问题，本发明提供了一种技术方案：
一种集成电路晶圆背面处理工艺，包括如下步骤：
T1、晶圆正面贴玻璃，通过黏合剂在晶圆正面贴上一层玻璃，玻璃和晶圆合为一体，提高了晶圆的整体支撑力，可以将晶圆厚度减薄到很低，达到50um，贴上玻璃的晶圆因支撑力提高，在后续的晶圆加工工序中便于运输和传递，具体为晶圆通过机械手臂放置在工作区域，在晶圆正面上涂一层黏合剂，设备自动将玻璃放置在涂抹黏合剂的晶圆正面上，利用激光加热技术，将玻璃和晶圆正面牢牢的合为一体，晶圆的整体支撑力加大。
T2、晶圆背面减薄：将晶圆固定在研磨设备内，通过机械磨加化学研磨液的方式进行，将晶圆背面减薄，有了正面玻璃的支撑，晶圆背面可以减薄到50um。
T3、晶圆背面蚀刻：将研磨后的晶圆放置在专用提篮中，利用酸性化学药剂对晶圆背面进行蚀刻，消除晶圆背面减薄对晶圆背面的不良影响，消除晶圆表面的轻微裂纹，消除研磨过程中产生的内应力，以及减薄过程中的细微不平整，在晶圆背面表面形成细微锯齿状纹路，提高晶圆背面与下道工序的金属结合力。
T4、晶圆背面真空热蒸镀：将晶圆固定在设备衬底上，采用物理的方法在晶圆背面上利用电子束加热金属的方式依次蒸发沉积三层金属层，分别是钛层、镍层和银层，三层金属的厚度达到10um，可根据产品的设计要求来设定不同的金属层厚度。
T5、晶圆背面电化学处理：先将热蒸镀后的晶圆先进行退银处理，因为银层与空气接触后会很快氧化，需要将银层表面的氧化层退掉，利用专有的退银剂处理，对退银后的银层表面再进行活化处理，提高晶圆表面银层的结合力，对晶圆的预浸处理，保护电化学沉积覆镍的化学溶液浓度，在晶圆表面银层的基础上利用电化学方式沉积一层厚银，再利用电化学的方式沉积一层镍，镍层的作用是保护金属银层不被氧化，同时镍层有很好的可焊性，对晶圆进行水洗、热水洗和烘干，清洁晶圆正面和晶圆背面。
T6、晶圆背面贴膜：在晶圆背面上贴上一层蓝膜，保护下道工序去除正面玻璃的时候不损伤到晶圆背面，同时为后道的封装芯片作准备。
T7、晶圆正面玻璃去除：晶圆通过机械手臂放置在工作区域，利用激光加热方式，融化黏合剂，利用机械手臂去除正面玻璃，此工序完成后，集成电路晶圆背面处理完成。
本发明的有益效果：通过在晶圆减薄的工序前增加一道贴玻璃工序，提高了晶圆的整体支撑力，可以将晶圆厚度降低，提高成品率，可以明显降低接触电阻，降低热阻，提高芯片性能；本工艺中选用钛作为底层与晶圆直接接触，另外选用镍和银作为导电金属，利用电子束的方式分别加热钛、镍、银，使钛、镍、银蒸发并依次沉积在晶圆表面，将源极或漏极导出；通过电化学的方式来增加金属银层厚度，可以将金属银层的厚度提高到80um左右，同时保证金属层的结合力和金属层厚度均匀；晶圆背面贴膜可保护去除晶圆表面玻璃时对晶圆损伤，同时对晶圆划片切割作准备。
具体实施方式：
本具体实施方式采用以下技术方案：一种集成电路晶圆背面处理工艺，包括如下步骤：
通过黏合剂在晶圆正面贴上一层玻璃，玻璃和晶圆合为一体，提高了晶圆的整体支撑力，可以将晶圆厚度减薄到很低，达到50um，贴上玻璃的晶圆因支撑力提高，在后续的晶圆加工工序中便于运输和传递，具体为晶圆通过机械手臂放置在工作区域，在晶圆正面上涂一层黏合剂，设备自动将玻璃放置在涂抹黏合剂的晶圆正面上，利用激光加热技术，将玻璃和晶圆正面牢牢的合为一体，晶圆的整体支撑力加大；将晶圆固定在研磨设备内，通过机械磨加化学研磨液的方式进行，将晶圆背面减薄，有了正面玻璃的支撑，晶圆背面可以减薄到50um；将研磨后的晶圆放置在专用提篮中，利用酸性化学药剂对晶圆背面进行蚀刻，消除晶圆背面减薄对晶圆背面的不良影响，消除晶圆表面的轻微裂纹，消除研磨过程中产生的内应力，以及减薄过程中的细微不平整，在晶圆背面表面形成细微锯齿状纹路，提高晶圆背面与下道工序的金属结合力；将晶圆固定在设备衬底上，采用物理的方法在晶圆背面上利用电子束加热金属的方式依次蒸发沉积三层金属层，分别是钛层、镍层和银层，三层金属的厚度达到10um，可根据产品的设计要求来设定不同的金属层厚度；先将热蒸镀后的晶圆先进行退银处理，因为银层与空气接触后会很快氧化，需要将银层表面的氧化层退掉，利用专有的退银剂处理，对退银后的银层表面再进行活化处理，提高晶圆表面银层的结合力，对晶圆的预浸处理，保护电化学沉积覆镍的化学溶液浓度，在晶圆表面银层的基础上利用电化学方式沉积一层厚银，再利用电化学的方式沉积一层镍，镍层的作用是保护金属银层不被氧化，同时镍层有很好的可焊性，对晶圆进行水洗、热水洗和烘干，清洁晶圆正面和晶圆背面；在晶圆背面上贴上一层蓝膜，保护下道工序去除正面玻璃的时候不损伤到晶圆背面，同时为后道的封装芯片作准备；晶圆通过机械手臂放置在工作区域，利用激光加热方式，融化黏合剂，利用机械手臂去除正面玻璃，此工序完成后，集成电路晶圆背面处理完成。
以上显示和描述了本发明的基本原理和主要特征和本发明的优点，本行业的技术人员应该了解，本发明不受上述实施例的限制，上述实施例和说明书中描述的只是说明本发明的原理，在不脱离本发明精神和范围的前提下，本发明还会有各种变化和改进，这些变化和改进都落入要求保护的本发明范围内，本发明要求保护范围由所附的权利要求书及其等效物界定。
Claims (1)
1.一种集成电路晶圆背面处理工艺，其特征在于，包括如下步骤：
T1、晶圆正面贴玻璃，通过黏合剂在晶圆正面贴上一层玻璃，玻璃和晶圆合为一体，提高了晶圆的整体支撑力，可以将晶圆厚度减薄到很低，达到50um，贴上玻璃的晶圆因支撑力提高，在后续的晶圆加工工序中便于运输和传递，具体为晶圆通过机械手臂放置在工作区域，在晶圆正面上涂一层黏合剂，设备自动将玻璃放置在涂抹黏合剂的晶圆正面上，利用激光加热技术，将玻璃和晶圆正面牢牢的合为一体，晶圆的整体支撑力加大。
T2、晶圆背面减薄：将晶圆固定在研磨设备内，通过机械磨加化学研磨液的方式进行，将晶圆背面减薄，有了正面玻璃的支撑，晶圆背面可以减薄到50um。
T3、晶圆背面蚀刻：将研磨后的晶圆放置在专用提篮中，利用酸性化学药剂对晶圆背面进行蚀刻，消除晶圆背面减薄对晶圆背面的不良影响，消除晶圆表面的轻微裂纹，消除研磨过程中产生的内应力，以及减薄过程中的细微不平整，在晶圆背面表面形成细微锯齿状纹路，提高晶圆背面与下道工序的金属结合力。
T4、晶圆背面真空热蒸镀：将晶圆固定在设备衬底上，采用物理的方法在晶圆背面上利用电子束加热金属的方式依次蒸发沉积三层金属层，分别是钛层、镍层和银层，三层金属的厚度达到10um，可根据产品的设计要求来设定不同的金属层厚度。
T5、晶圆背面电化学处理：先将热蒸镀后的晶圆先进行退银处理，因为银层与空气接触后会很快氧化，需要将银层表面的氧化层退掉，利用专有的退银剂处理，对退银后的银层表面再进行活化处理，提高晶圆表面银层的结合力，对晶圆的预浸处理，保护电化学沉积覆镍的化学溶液浓度，在晶圆表面银层的基础上利用电化学方式沉积一层厚银，再利用电化学的方式沉积一层镍，镍层的作用是保护金属银层不被氧化，同时镍层有很好的可焊性，对晶圆进行水洗、热水洗和烘干，清洁晶圆正面和晶圆背面。
T6、晶圆背面贴膜：在晶圆背面上贴上一层蓝膜，保护下道工序去除正面玻璃的时候不损伤到晶圆背面，同时为后道的封装芯片作准备。
T7、晶圆正面玻璃去除：晶圆通过机械手臂放置在工作区域，利用激光加热方式，融化黏合剂，利用机械手臂去除正面玻璃，此工序完成后，集成电路晶圆背面处理完成。
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