CN112216643B - 转移微型元件的方法 - Google Patents

转移微型元件的方法 Download PDF

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CN112216643B
CN112216643B CN201911275287.8A CN201911275287A CN112216643B CN 112216643 B CN112216643 B CN 112216643B CN 201911275287 A CN201911275287 A CN 201911275287A CN 112216643 B CN112216643 B CN 112216643B
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microelements
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transfer plate
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陈立宜
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Mikro Mesa Technology Co Ltd
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Abstract

一种转移微型元件的方法,包含:准备转移板,转移板具有微型元件于其上,其中微型元件接触转移板的拾取表面;形成包含微型元件、接收基板的接触垫和位于微型元件和接触垫之间的一些水的结构,水的两个相反的表面分别接触微型元件和接触垫的贴附表面,接触垫面对转移板的贴附表面的亲水性大于转移板面对接收基板的拾取表面的亲水性;以及蒸发水,使得微型元件贴附至接触垫并与接触垫接触。本发明的方法可辅助微型元件从转移板脱离并将微型元件黏附固定至接收基板的接触垫。

Description

转移微型元件的方法
技术领域
本发明是关于转移微型元件的方法。
背景技术
此处的陈述仅提供与本发明有关的背景信息,而不必然地构成现有技术。
转移元件的传统技术包含借由晶圆黏合(wafer bonding)从转移晶圆转移到接收基板。这类实施方式的一种为「直接黏合(direct bonding)」,其涉及单一黏合步骤将元件阵列从转移晶圆转移到接收基板,接着移除转移晶圆。另一种的这类实施方式为「间接黏合(indirect bonding)」,其涉及两个黏合/剥离步骤。在间接黏合中,转移头可以从供应基板拾取元件阵列,然后将元件阵列黏合到接收基板,接着移除转移头。
近年来,许多研究人员和专家尝试克服困难,欲使得元件巨量转移(亦即,转移百万或千万数量级的元件)在商业应用中成为可能的技术。巨量转移技术的困难点中,降低成本、时间效率和良率是其中三个重要议题。
发明内容
本发明的目的在于克服现有技术的缺陷,而提出一种改进的转移微型元件的方法,可辅助微型元件从转移板脱离并将微型元件黏附固定至接收基板的接触垫。
本发明的目的及解决其技术问题是采用以下技术方案来实现的。
本发明的一些实施方式公开了一种转移微型元件的方法,包含:准备转移板,转移板具有微型元件于其上,其中微型元件接触转移板的拾取表面;形成包含微型元件、接收基板的接触垫和位于微型元件和接触垫之间的一些水的结构,水的两个相反的表面分别接触微型元件和接触垫的贴附表面,接触垫面对转移板的贴附表面的亲水性大于转移板面对接收基板的拾取表面的亲水性;以及蒸发水,使得微型元件贴附至接触垫并与接触垫接触。
根据本发明的一实施例,形成结构包含:形成水在微型元件和接触垫当中的至少一者上;以及放置微型元件至接收基板的上方,使得水位于微型元件和接收基板的接触垫之间。
根据本发明的一实施例,形成水包含喷洒蒸气至微型元件和接触垫的至少一者上,使得至少一部分的蒸气凝结以形成水。
根据本发明的一实施例,蒸气的水蒸气压高于环境水蒸气压。
根据本发明的一实施例,蒸气主要包含氮和水。
根据本发明的一实施例,水是于温度约在露点时形成的。
根据本发明的一实施例,形成水包含在包含蒸气的环境中降低转移板的温度,使得至少一部分的蒸气凝结以形成水。
根据本发明的一实施例,转移微型元件的方法更包含施加外部压力以在蒸发水的期间压紧微型元件和接触垫。
根据本发明的一实施例,转移微型元件的方法更包含在蒸发水之前将微型元件从转移板脱离,微型元件黏附固定至接收基板。
根据本发明的一实施例,转移微型元件的方法更包含降低接收基板的温度,使得在微型元件脱离转移板之前冻住水。
根据本发明的一实施例,转移微型元件的方法更包含在蒸发水之后将微型元件从转移板脱离,微型元件黏附固定至接收基板。
根据本发明的一实施例,转移微型元件的方法更包含加热微型元件和接收基板的组合以在微型元件脱离转移板之前产生黏合力将微型元件和接触垫黏合在一起。
根据本发明的一实施例,微型元件的侧向长度小于或等于约100微米。
根据本发明的一实施例,微型元件包含电极于其上,且微型元件经由电极贴附并与接触垫接触,电极和接触垫之间的接触面积小于或等于约1平方毫米。
根据本发明的一实施例,转移微型元件的方法更包含在蒸发水后升高接触垫的温度至高于水的沸点和低于接触垫和电极之间的共晶点。
本发明与现有技术相比具有明显的优点和有益效果。借由上述技术方案,根据本发明的转移微型元件的方法,接触垫面对转移板的贴附表面的亲水性大于转移板面对接收基板的拾取表面的亲水性,从而可辅助微型元件从转移板脱离并将微型元件黏附固定至接收基板的接触垫。
上述说明仅是本发明技术方案的概述,为了能够更清楚了解本发明的技术手段,而可依照说明书的内容予以实施,并且为了让本发明的上述和其他目的、特征和优点能够更明显易懂,以下特举较佳实施例,并配合图式,详细说明如下。
附图说明
图1绘示本发明一些实施例中转移微型元件的方法的流程图。
图2A绘示本发明一些实施例中图1所描述的方法的中间阶段的剖面示意图。
图2B绘示本发明一些实施例中图1所描述的方法的中间阶段的剖面示意图。
图2C绘示本发明一些实施例中图1所描述的方法的中间阶段的剖面示意图。
图2D绘示本发明一些实施例中图1所描述的方法的中间阶段的剖面示意图。
图2E绘示本发明一些实施例中图1所描述的方法的中间阶段的剖面示意图。
图3绘示本发明一些实施例中图1所描述的方法的可选中间阶段的剖面示意图。
图4绘示本发明一些实施例中图1所描述的方法的可选中间阶段的剖面示意图。
图5绘示本发明一些实施例中图1所描述的方法的可选中间阶段的剖面示意图。
图6绘示本发明一些实施例中图1所描述的方法的可选中间阶段的剖面示意图。
图7绘示本发明一些实施例中微型元件的剖面示意图。
图8绘示本发明一些实施例中图1所描述的方法的可选中间阶段的剖面示意图。
【主要元件符号说明】
100:转移微型元件的方法
110、120、130:操作
210:微型元件
212:电极
214:第一型半导体层
216:主动层
218:第二型半导体层
2122、2422:表面
220、260:水
230:转移板
232:拾取表面
240:接收基板
242:接触垫
250、250’:蒸气
L:侧向长度
S:结构
A1:面积
P:外部压力
具体实施方式
为更进一步阐述本发明为达成预定发明目的所采取的技术手段及功效,以下结合图式及较佳实施例,对依据本发明提出的转移微型元件的方法,其具体实施方式、结构、方法、步骤、特征及其功效,详细说明如后。
有关本发明的前述及其他技术内容、特点及功效,在以下配合参考图式的较佳实施例的详细说明中将可清楚呈现。通过具体实施方式的说明,当可对本发明为达成预定目的所采取的技术手段及功效更加深入且具体的了解,然而所附图式仅是提供参考与说明之用,并非用来对本发明加以限制。
为简化图式,一些现有已知惯用的结构与元件在图式中将以简单示意的方式绘示。并且,除非有其他表示,在不同图式中相同的元件符号可视为相对应的元件。这些图式的绘示是为了清楚表达这些实施方式中各元件之间的连接关系,并非绘示各元件的实际尺寸。
参考图1和图2A至图2D。图1绘示本发明一些实施例中转移微型元件210的方法100的流程图。图2A至图2D绘示本发明一些实施例中图1所描述的方法100的中间阶段的剖面示意图。图2E绘示本发明一些实施例中图1所描述的方法100的中间阶段的剖面示意图。方法100从操作110开始,准备转移板230,转移板230具有微型元件210于其上,其中微型元件210接触转移板230的拾取表面232(参考图2A)。方法100接着进行操作120,形成包含微型元件210、接收基板240的接触垫242和位于微型元件210和接触垫242之间的一些水220的结构S,水220的两个相反的表面分别接触微型元件210和接触垫242的贴附表面2422(参考图2B)。方法100接着进行操作130,蒸发水220以使得微型元件210贴附至接触垫242并与接触垫242接触(参考图2C和图2E)。在一些实施例中,在蒸发水220之后(参考图2C)将微型元件210从转移板230脱离(参考图2E)。在一些实施例中,在蒸发水220之前将微型元件210从转移板230脱离(参考图2D和图2E)。简而言之,在一些实施例中,操作的顺序可以是从图2A至图2B,接着至图2C,然后至图2E。在一些其它实施例中,操作的顺序可以是从图2A至图2B,接着至图2D,然后至图2E。
虽然在前一段落仅提及“一个”微型元件210,“多个”微型元件210是可以用于实际应用中的,并仍在本发明的范围内,且不会在本发明中特别强调。
参考图2B和图3至图6。图3至图6绘示本发明一些实施例中方法100的可选中间阶段的剖面示意图。图3至图6所分别描述的实施例可以独立地执行或组合式地执行。在一些实施例中,在包含蒸气的环境中降低转移板230的温度,使得至少一部分的蒸气凝结以在微型元件210上形成水220(参考图3),接着放置微型元件210至接收基板240的上方,使得水220位于微型元件210和接收基板240的接触垫242之间。在一些实施例中,水220是于温度约在露点时形成的。
在一些实施例中,喷洒蒸气250至微型元件210上,使得至少一部分的蒸气250凝结以形成水220(参考图4)。在一些实施例中,水220亦允许形成在转移板230上。在一些实施例中,蒸气250的水蒸气压高于环境水蒸气压。借由上述条件,当执行喷洒时,蒸气250更有可能凝结在微型元件210上。在一些实施例中,蒸气250主要包含氮和水。
在一些实施例中,于放置微型元件210前形成一些水260在接收基板240的接触垫242上(参考图5)。虽然水260如图5所示为连续地分布并覆盖接收基板240和接触垫242,水260亦可不连续地分布在接收基板240上。例如,覆盖接触垫242的岛状的水(图中未示)。在一些实施例中,在包含蒸气的环境中降低接收基板240的温度(图中未示),使得至少一部分的蒸气凝结以形成水260。在一些实施例中,喷洒蒸气250’至接触垫242上,使得至少一部分的蒸气250’凝结以形成水260(参考图6)。在一些实施例中,水260亦允许形成在接收基板240上。在一些实施例中,蒸气250’的水蒸气压高于环境水蒸气压。借由上述条件,当执行喷洒时,蒸气250’更有可能凝结在接触垫242上。在一些实施例中,蒸气250’主要包含氮和水。在一些其它实施例中,微型元件210可放置在接触垫242上并与接触垫242接触,接着形成水260,且水260渗透进入微型元件210和接触垫242之间的空间。
在一些实施例中,接触垫242是导电的。在一些实施例中,接触垫242包含铜和富含铜的材料的其中之一。富含铜的材料为铜占原子总数一半以上的材料。在一些实施例中,接触垫242包含黏合材料。黏合材料包含钛(titanium,Ti)、锡(tin,Sn)或铟(indium,In),或者其组合。钛、锡和铟的其中一者占黏合材料的原子总数一半以上。在一些实施例中,微型元件210的侧向长度L小于或等于约100微米。
在一些实施例中,微型元件210借由转移板230并经由机械力(例如,黏着力)或电磁力(例如,静电力或借由双极电极的交流电压增加的静电力)来放置,但不以此为限。在水220(260)与接触垫242和微型元件210皆接触后,微型元件210和接触垫242由水220(260)的相反两面所产生的毛细力抓在一起。在一些实施例中,位于微型元件210和接触垫242之间的水220(260)的厚度小于微型元件210的厚度,使其可以更精准地控制(维持)水220(260)蒸发后微型元件210和接触垫242之间的相对位置。在一些实施例中,使用约为水220(260)的沸点的温度来蒸发水220(260)。
参考图2C、图2D和图2E。在蒸发水220(260)后,微型元件210黏附固定至接收基板240。在一些实施例中,降低接收基板240的温度,使得使水220(260)在微型元件210从转移板230脱离前冻住。冻住的水220(260)提供抓住微型元件210的力,转移板230接着从微型元件210脱离(例如,参考图2D)。应注意,接触垫242面对转移板230的贴附表面2422的亲水性大于转移板230面对接收基板240的拾取表面232的亲水性。由于一些水蒸气(或水)可存在于拾取表面232和微型元件210之间,上述关于亲水性的条件可辅助微型元件210从转移板230脱离并将微型元件210黏附固定至接触垫242。详细而言,存在于拾取表面232和微型元件210之间的水蒸气(或水)可以是来自空气中的湿气或者水220的渗透。因此,接触垫242的贴附表面2422和水220(260)之间的拉力大于转移板230的拾取表面232和存在于拾取表面232和微型元件210之间的水蒸气(或水)之间的拉力,从而借由前述亲水性的条件帮助微型元件210从转移板230转移至接收基板240。
参考图7。图7绘示本发明一些实施例中微型元件210的剖面示意图。在一些实施例中,微型元件210包含电极212于其上,在水220(260)蒸发后,微型元件210经由电极212贴附至接触垫242并与接触垫242接触。在一些实施例中,微型元件210包含第一型半导体层214、主动层216和第二型半导体层218。主动层216在第一型半导体层214上,第二型半导体层218在主动层216上。第一型半导体层214可以是p型半导体层,第二型半导体层218可以是n型半导体层,但不以此为限。
在一些实施例中,进一步加热微型元件210和接收基板240的组合以产生黏合力以在蒸发水220之后和在微型元件210从转移板230脱离之前将微型元件210和接触垫242黏合在一起。由于黏合力一般而言比前述由水220(260)辅助的贴附(力)要强,微型元件210可以在微型元件210和接触垫242之间的相对位置在可控范围内之后更坚固地黏附固定至接触垫242。在一些实施例中,在蒸发水220(260)后,进一步增加接触垫242的温度至高于水220的沸点且低于接触垫242和电极212之间的共晶点。详细而言,前述“低于”意指低于共晶点但仍足以引发接触垫242和电极212之间固相扩散的温度点,其使得微型元件210“黏合”至接触垫242以增强电极212和接触垫242之间的坚固程度。在这样的实施例中,由于较低温度的黏合制造过程,可更佳地保护微型元件210(亦即,保护微型元件210免于在黏合制造过程期间有所损坏)。
在一些实施例中,在蒸发水220(260)后进一步增加接触垫242的温度至高于接触垫242和电极212之间的共晶点。在一些实施例中,接触垫242的温度增加至一温度点,使其发生固相扩散以将电极212黏合至接触垫242。在一些实施例中,电极212的厚度范围从约0.2微米至约2微米以满足固相扩散发生的准则和缩减微型元件210尺寸的趋势之间的平衡。在一些实施例中,电极212包含黏合材料。黏合材料包含锡、铟、钛以及前述元素的组合当中的一个。锡、铟、钛当中的一者占黏合材料的原子总数一半以上。在一些实施例中,电极212包含铜和富含铜的材料的其中之一。富含铜的材料为铜占原子总数一半以上的材料。
在一些实施例中,电极212和接触垫242之间的接触面积A1小于或等于约1平方毫米(squaremi llimeter,mm2)。上述接触面积A1尺寸的限制是用来帮助毛细力将电极212面向接触垫242的表面2122和接触垫242面向电极212的贴附表面2422拉在一起(参考图2B),并且在蒸发水220后辅助形成固相黏合。
贴附后的电极212和接触垫242之间的结构整体性(坚固程度)足够强以保持微型元件210的位置并在电极212和接触垫242之间形成接触。应注意,“水220(260)辅助黏合”在微型元件210的侧向长度L小于或等于约100微米时较为有效,原因在于较小的微型元件210侧向长度L导致接触区域的外缘长度和接触区域的面积(亦即,接触面积A1)之间有较高的比例,助长了毛细力的影响,并因此形成贴附。而且,上述微型元件210的接触面积A1优选为小于或等于约1平方毫米。如果接触面积A1太大,毛细力的影响将会太小而无法将电极212的表面2122和接触垫242的贴附表面2422拉在一起至足以在蒸发水220后辅助形成固相黏合的程度。鉴于前面的解释,在一些辅助实施例中,电极212可以是图案化电极,其包含至少两个隔离部分,隔离部分彼此隔离,从而增加了接触区域的外缘长度和接触区域的面积之间的比例。
参考图8。图8绘示本发明一些实施例中方法100的可选中间阶段的剖面示意图。在一些实施例中,施加外部压力P以在蒸发水220(260)期间压紧微型元件210和接触垫242,以更进一步辅助电极212与接触垫242接触,以在两者间发生更好的固相黏合。施加在微型元件210上的外部压力P可以是借由将转移板230压向微型元件210的方式(例如,放置物体)产生。在一些实施例中,前述放置的物体为附加的板子,其尺寸(例如,面积)等于或大于转移板230的尺寸(例如,面积)。和具有随机形状和尺寸的物体相比,上述附加的板子可在微型元件210上产生更均匀的外部压力P。在一些实施例中,施加在微型元件210上的外部压力P可以是借由改变环境压力以压紧微型元件210和接触垫242的方式产生,但不以此为限。
综上所述,本发明的实施例提供转移微型元件的方法。接触垫面对转移板的贴附表面的亲水性大于转移板面对接收基板的拾取表面的亲水性,从而辅助微型元件从转移板脱离并将微型元件黏附固定至接收基板的接触垫。
以上所述,仅是本发明的较佳实施例而已,并非对本发明作任何形式上的限制,虽然本发明已以较佳实施例揭露如上,然而并非用以限定本发明,任何熟悉本专业的技术人员,在不脱离本发明技术方案范围内,当可利用上述揭示的技术内容作出些许更动或修饰为等同变化的等效实施例,但凡是未脱离本发明技术方案的内容,依据本发明的技术实质对以上实施例所作的任何简单修改、等同变化与修饰,均仍属于本发明技术方案的范围内。

Claims (13)

1.一种转移微型元件的方法,其特征在于,包含:
准备转移板,所述转移板具有微型元件于其上,其中所述微型元件接触所述转移板的拾取表面;
形成包含所述微型元件、接收基板的接触垫和位于所述微型元件和所述接触垫之间的一些水的结构,所述水的两个相反的表面分别接触所述微型元件和所述接触垫的贴附表面,其中所述接触垫面对所述转移板的所述贴附表面的亲水性大于所述转移板面对所述接收基板的所述拾取表面的亲水性;
降低所述接收基板的温度,使得在所述微型元件脱离所述转移板之前冻住所述水;以及
蒸发所述水,使得所述微型元件贴附至所述接触垫并与所述接触垫接触。
2.如权利要求1所述的方法,其特征在于,形成所述结构包含:
形成所述水在所述微型元件和所述接触垫当中的至少一者上;以及
放置所述微型元件至所述接收基板的上方,使得所述水位于所述微型元件和所述接收基板的所述接触垫之间。
3.如权利要求2所述的方法,其特征在于,形成所述水包含:
喷洒蒸气至所述微型元件和所述接触垫的至少一者上,使得至少一部分的蒸气凝结以形成水。
4.如权利要求3所述的方法,其特征在于,所述蒸气的水蒸气压高于环境水蒸气压。
5.如权利要求3所述的方法,其特征在于,所述蒸气主要包含氮和水。
6.如权利要求2所述的方法,其特征在于,所述水是于温度在露点时形成的。
7.如权利要求2所述的方法,其特征在于,形成所述水包含:
在包含蒸气的环境中降低所述转移板的温度,使得至少一部分的所述蒸气凝结以形成所述水。
8.如权利要求1所述的方法,其特征在于,更包含:
施加外部压力以在蒸发所述水的期间压紧所述微型元件和所述接触垫。
9.如权利要求1所述的方法,其特征在于,更包含:
在蒸发所述水之前将所述微型元件从所述转移板脱离,所述微型元件黏附固定至所述接收基板。
10.如权利要求1所述的方法,其特征在于,更包含:
在蒸发所述水之后将所述微型元件从所述转移板脱离,所述微型元件黏附固定至所述接收基板。
11.如权利要求10所述的方法,其特征在于,更包含:
加热所述微型元件和所述接收基板的组合以在所述微型元件脱离所述转移板之前产生黏合力将所述微型元件和所述接触垫黏合在一起。
12.如权利要求1所述的方法,其特征在于,所述微型元件的侧向长度小于或等于100微米。
13.如权利要求1所述的方法,其特征在于,电极和所述接触垫之间的接触面积小于或等于1平方毫米。
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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09330843A (ja) * 1996-06-11 1997-12-22 Matsushita Electric Ind Co Ltd 電子部品の製造方法
CN1729561A (zh) * 2002-12-18 2006-02-01 皇家飞利浦电子股份有限公司 利用小滴流体操纵物体
WO2009124921A1 (fr) * 2008-04-09 2009-10-15 Commissariat A L'energie Atomique Auto-assemblage de puces sur un substrat
US10312218B1 (en) * 2018-07-20 2019-06-04 Mikro Mesa Technology Co., Ltd. Method for binding micro device to substrate
CN109962146A (zh) * 2017-12-24 2019-07-02 美科米尚技术有限公司 将微型元件贴附至导电垫的贴附方法与其微型结构

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6276072B1 (en) * 1997-07-10 2001-08-21 Applied Materials, Inc. Method and apparatus for heating and cooling substrates
JP6055259B2 (ja) * 2012-10-03 2016-12-27 日東電工株式会社 封止シート被覆半導体素子、その製造方法、半導体装置およびその製造方法
EP2889900B1 (en) * 2013-12-19 2019-11-06 IMEC vzw Method for aligning micro-electronic components using an alignment liquid and electrostatic alignment as well as corresponding assembly of aligned micro-electronic components
CN104485294A (zh) * 2014-12-12 2015-04-01 浙江中纳晶微电子科技有限公司 一种晶圆临时键合及分离方法
US10304364B2 (en) * 2015-01-23 2019-05-28 Vuereal Inc. Identifying and repairing defects for micro-device integrated systems
US10600823B2 (en) * 2015-09-02 2020-03-24 Facebook Technologies, Llc Assembly of semiconductor devices
TWI653694B (zh) * 2017-09-13 2019-03-11 英屬開曼群島商錼創科技股份有限公司 微型發光元件陣列製造方法、轉移載板以及微型發光元件陣列

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09330843A (ja) * 1996-06-11 1997-12-22 Matsushita Electric Ind Co Ltd 電子部品の製造方法
CN1729561A (zh) * 2002-12-18 2006-02-01 皇家飞利浦电子股份有限公司 利用小滴流体操纵物体
WO2009124921A1 (fr) * 2008-04-09 2009-10-15 Commissariat A L'energie Atomique Auto-assemblage de puces sur un substrat
CN109962146A (zh) * 2017-12-24 2019-07-02 美科米尚技术有限公司 将微型元件贴附至导电垫的贴附方法与其微型结构
US10312218B1 (en) * 2018-07-20 2019-06-04 Mikro Mesa Technology Co., Ltd. Method for binding micro device to substrate
CN110739235A (zh) * 2018-07-20 2020-01-31 美科米尚技术有限公司 微型元件贴附方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
卷对卷紫外压印超疏水薄膜的工艺及装置;邹业兵;王智伟;吴天准;彭智婷;;集成技术(第03期);全文 *

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