CN108598038A - 承载装置 - Google Patents
承载装置 Download PDFInfo
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- CN108598038A CN108598038A CN201810019376.5A CN201810019376A CN108598038A CN 108598038 A CN108598038 A CN 108598038A CN 201810019376 A CN201810019376 A CN 201810019376A CN 108598038 A CN108598038 A CN 108598038A
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- 239000004065 semiconductor Substances 0.000 claims description 45
- 239000003292 glue Substances 0.000 claims description 19
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- 239000000758 substrate Substances 0.000 abstract description 44
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- 238000001704 evaporation Methods 0.000 description 3
- 238000001179 sorption measurement Methods 0.000 description 3
- 230000005679 Peltier effect Effects 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
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- 238000000859 sublimation Methods 0.000 description 1
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- 238000002207 thermal evaporation Methods 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
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Abstract
本公开提供一种承载装置,该承载装置包括:承载部件,用于承载待承物;粘附元件,设置在所述承载部件上,所述粘附元件的粘性可变以实现待承物与所述承载装置的粘附与分离;支撑件,设置在所述承载部件上,用于支撑所述待承物。本公开提供的承载装置能够在真空环境下快速地实现基板或器件的吸附和分离。
Description
技术领域
本公开涉及显示技术领域,尤其涉及一种承载装置。
背景技术
在现有技术下,有机发光二极管(OLED)器件中的有机功能层主要采用真空热蒸镀法制备。蒸发材料存放于蒸发源中的坩埚内,通过加热器对坩埚进行加热使蒸发材料升华,有机蒸汽从喷射机构喷出沉积于基板的蒸镀面上,在基板表面形成均匀的有机薄膜。现有蒸镀设备多采用基板蒸镀面向下的形式,可以提高材料的利用率并且避免蒸镀过程中产生的灰尘颗粒落在蒸镀面。现有设备多采用普通粘性物体吸着基板背面以减小弯曲,但在基板分离时易发生基板破裂。
除了有机发光二极管(OLED)器件的生产制备过程中涉及处理基板时对基板的承载问题,在其他显示器件或者半导体器件的制备过程中,如果需要在高真空中处理,也会涉及到基板或器件的承载问题。
现有技术中亟需一种承载装置,可应用于高真空的蒸镀过程中承载基板或其他器件。
发明内容
鉴于现有技术中的上述问题,本发明提供一种承载装置,能够在真空环境下快速地实现基板或器件的吸附和分离。
该承载装置包括:承载部件,用于承载待承物;粘附元件,设置在所述承载部件上,所述粘附元件的粘性可变以实现待承物与所述承载装置的粘附与分离;支撑件,设置在所述承载部件上,用于支撑所述待承物。
其中,所述粘附元件还包括可变温度的元件和设置在所述可变温度的元件上的热敏胶,通过所述元件的温度变化来改变所述热敏胶的粘性。
其中,所述支撑件与所述粘附元件交替设置。
其中,所述可变温度的元件为帕尔贴半导体元件。
其中,所述帕尔贴半导体元件包括半导体层,分别设置在半导体层上下表面上的上导电层和下导电层,分别设置在所述上导电层和所下导电层的远离所述半导体层的表面上的绝缘层。
其中,所述半导体层包括n型半导体材料和p型半导体材料形成的电偶对。
其中,所述承载装置还包括电源装置,与所述帕尔贴半导体元件连接,向所述帕尔贴半导体元件提供方向可变的电流,加热和制冷所述帕尔贴半导体元件。
其中,所述支撑件为可升降的支撑件。
其中,所述承载装置还包括驱动机构,与所述支撑件连接,用于驱动所述基板支撑件上下运动。
其中,所述基板支撑件包括柔性结构和刚性结构,所述刚性结构与所述承载部件接触,所述柔性结构设置在所述刚性结构上。
根据本实施例的承载装置,通过采用可变粘性的热敏胶和可变温度的元件,解决真空环境下基板的固定;可变粘性的热敏胶粘附着基板,可供工艺面向下的基板完成相关制程;通过基于帕尔帖效应的热电制冷/制热而改变热敏胶的粘性,完成对基板的吸附、分离过程;基板吸附和分离动作都可在真空环境下完成;而且能够快速地实现基板的吸附和分离。
附图说明
图1为根据本公开实施例的承载装置的结构示意图。
图2为根据本公开实施例的粘附元件的结构示意图。
图3为根据本公开实施例的粘附元件的结构示意图。
图4为根据本公开实施例的粘附元件的结构示意图。
图5为根据本公开实施例的承载装置承载待承物时的结构示意图。
图6为根据本公开实施例的支撑件的侧视结构示意图
具体实施方式
下面结合附图和实施例对本公开作进一步的详细说明。可以理解的是,此处所描述的具体实施例仅用于解释本公开,而非对本公开的限定。另外还需要说明的是,为了便于描述,附图中仅示出了与本公开相关的部分而非全部结构。
实施例一
本实施例提供一种承载装置,图1为根据本实施例的承载装置的结构示意图。
如图1所示,该承载装置包括:承载部件1,用于承载待承物,这里的待承物一般情况下为显示装置的基板,也可以为其他器件,在下面的描述中以待承物为OLED的基板为例,但实施例不限于此;粘附元件2,设置在所述承载部件上,所述粘附元件的粘性可变以实现待承物与所述承载装置的粘附与分离;支撑件3,设置在所述承载部件上,用于支撑所述待承物。
图2为根据本公开实施例的粘附元件的结构示意图。如图2所示,根据本实施例的粘附元件2包括元件5和设置在元件上的热敏胶4。通过所述元件的温度变化来改变所述热敏胶4的粘性。如图2中的a图所示,在元件5上覆盖热敏胶4,热敏胶4与元件5是可分离的;如图2中的b图所示,热敏胶4覆盖在元件5上。
元件5可以为帕尔贴半导体元件。所述帕尔贴半导体元件包括半导体层,半导体层包括p型半导体材料和n型半导体材料形成的电偶对,也就是半导体层包括p型半导体元件5-1和n型半导体元件5-2,分别设置在半导体层上下表面上的上导电层和下导电层8,分别设置在所述上导电层上和所下导电层的远离所述半导体层的表面上的绝缘层7。
帕尔贴半导体元件5还包括与p型半导体元件5-1连接的电极接头6-1和与n型半导体元件5-2连接的电极接头6-2,所述电极接头6-1和6-2与外部电源连接,使得半导体元件中有电流通过,并且可以通过改变电极接头连接的电极极性,进而基于帕尔贴效应改变半导体元件5的温度。
如图3所示,此时电极接头6-1接电源的正极,电极接头6-2接电源的负极,基于帕尔贴效应,电流由与P型元件5-1连接的电极接头6-1流入,流向与N型元件5-2连接的电极接头6-2,释放热量,使得半导体元件的温度升高,与半导体元件5接触的热敏胶4的粘性加大。
如图4所示,此时电极接头6-1接电源的负极,电极接头6-2接电源的正极,电流由N型元件5-2连接的电极接头6-2流入,流向与与P型元件5-1连接的电极接头6-1,吸收热量,使得元件的温度降低,与元件5接触的热敏胶4的失去粘性。
所述支撑件与所述粘附元件交替设置,而且所述支撑件为可升降的支撑件。当支撑件升起时可以将基板托起,便于搬运;支撑件下落时,支撑件的顶端与粘附元件2在同一水平面上,此时粘附元件2与基板接触,实现对基板的粘附。
接下来结合图5详细描述根据本实施的承载装置承载基板的工作过程。图5为根据本公开实施例的承载装置承载待承物时的结构示意图。
承载装置101承载着基板9,进入到吸附/分离位置,也就是基板要经受工艺处理的位置,在工艺处理过程中,基板9需要稳定地固定在承载装置上。当需要粘附基板时,支撑件3下降,支撑件3的顶端与粘附元件2在同一水平面上,此时粘附元件2与基板接触,基于帕尔帖效应,粘附元件2中的半导体元件升温,进而粘附元件2升温使得热敏胶的粘性加大,将基板粘附于热敏胶表面,实现基板稳定地固定在。粘附元件2中的元件升温方式已经在以上进行过描述,在此不再赘述。
当对基板的处理完毕,需要分离基板时,粘附元件2中的元件降温,进而粘附元件温度降低使得热敏胶失去粘性,热敏胶与基板分离,支撑件3升起,基板由支撑件3顶起,再由机械手取走,支撑件3再落回。
所述承载装置还包括电源装置(图中未示出),与所述帕尔贴半导体元件连接,向所述帕尔贴半导体元件提供方向可变的电流,加热和制冷所述帕尔贴半导体元件。
所述承载装置还包括驱动机构(图中未示出),与所述支撑件3连接,用于驱动所述基板支撑件3上下运动。
另外,图6示出了根据本实施例的支撑件3的侧视结构示意图。如图6所示,所述支撑件包括柔性结构3-1和刚性结构3-2,所述刚性结构与所述承载部件1接触,所述柔性结构3-1设置在所述刚性结构3-2上。在承载基板时柔性结构3-1与基板接触可与减小对基板的损害,刚性结构则提供牢固的支撑。
帕尔贴半导体元件用作半导体制冷片,其热惯性非常小,制冷制热时间很快,在热端散热良好冷端空载的情况下,通电不到一分钟,制冷片就能达到最大温差。
根据本实施例的承载装置,通过采用可变粘性的热敏胶和可变温度的半导体元件,解决真空环境下基板的固定;可变粘性的热敏胶粘附着基板,可供工艺面向下的基板完成相关制程;通过帕尔帖效应,热电制冷/制热而改变热敏胶的粘性,完成对基板的吸附、分离过程;基板吸附和分离动作都可在真空环境下完成;而且半导体元件的热惯性非常小,制冷制热时间快,能够快速地实现基板的吸附和分离。
本领域技术人员应当理解,本公开不限于这里所述的特定实施例,对本领域技术人员来说能够进行各种明显的变化、重新调整和替代而不会脱离本公开的保护范围。因此,虽然通过以上实施例对本公开进行了较为详细的说明,但是本公开不仅仅限于以上实施例,在不脱离本公开构思的情况下,还可以包括更多其他等效实施例,而本公开的范围由所附的权利要求决定。
Claims (10)
1.一种承载装置,包括:
承载部件,用于承载待承物;
粘附元件,设置在所述承载部件上,所述粘附元件的粘性可变以实现待承物与所述承载装置的粘附与分离;
支撑件,设置在所述承载部件上,用于支撑所述待承物。
2.根据权利要求1所述的承载装置,所述粘附元件还包括可变温度的元件和设置在所述可变温度的元件上的热敏胶,通过所述元件的温度变化来改变所述热敏胶的粘性。
3.根据权利要求1或2所述的承载装置,所述支撑件与所述粘附元件交替设置。
4.根据权利要求1或2所述的承载装置,所述可变温度的元件为帕尔贴半导体元件。
5.根据权利要求4所述的承载装置,所述帕尔贴半导体元件包括半导体层,分别设置在半导体层上下表面上的上导电层和下导电层,分别设置在所述上导电层和所下导电层的远离所述半导体层的表面上的绝缘层。
6.根据权利要求5所述的承载装置,所述半导体层包括n型半导体材料和p型半导体材料形成的电偶对。
7.根据权利要求4所述的承载装置,所述承载装置还包括电源装置,与所述帕尔贴半导体元件连接,向所述帕尔贴半导体元件提供方向可变的电流,加热和制冷所述帕尔贴半导体元件。
8.根据权利要求1或2所述的承载装置,所述支撑件为可升降的支撑件。
9.根据权利要求8所述的承载装置,所述承载装置还包括驱动机构,与所述支撑件连接,用于驱动所述支撑件上下运动。
10.根据权利要求8所述的承载装置,所述支撑件包括柔性结构和刚性结构,所述刚性结构与所述承载部件接触,所述柔性结构设置在所述刚性结构上。
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