CN108598038A - 承载装置 - Google Patents

承载装置 Download PDF

Info

Publication number
CN108598038A
CN108598038A CN201810019376.5A CN201810019376A CN108598038A CN 108598038 A CN108598038 A CN 108598038A CN 201810019376 A CN201810019376 A CN 201810019376A CN 108598038 A CN108598038 A CN 108598038A
Authority
CN
China
Prior art keywords
bogey
support element
peltier
substrate
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201810019376.5A
Other languages
English (en)
Inventor
叶岚凯
郭书鹏
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BOE Technology Group Co Ltd
Hefei Xinsheng Optoelectronics Technology Co Ltd
Original Assignee
BOE Technology Group Co Ltd
Hefei Xinsheng Optoelectronics Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BOE Technology Group Co Ltd, Hefei Xinsheng Optoelectronics Technology Co Ltd filed Critical BOE Technology Group Co Ltd
Priority to CN201810019376.5A priority Critical patent/CN108598038A/zh
Publication of CN108598038A publication Critical patent/CN108598038A/zh
Priority to US16/176,209 priority patent/US11315814B2/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/67346Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders characterized by being specially adapted for supporting a single substrate or by comprising a stack of such individual supports
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12Organic material
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50Substrate holders
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54Controlling or regulating the coating process
    • C23C14/541Heating or cooling of the substrates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67098Apparatus for thermal treatment
    • H01L21/67109Apparatus for thermal treatment mainly by convection
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67242Apparatus for monitoring, sorting or marking
    • H01L21/67248Temperature monitoring
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67242Apparatus for monitoring, sorting or marking
    • H01L21/67253Process monitoring, e.g. flow or thickness monitoring
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67706Mechanical details, e.g. roller, belt
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/80Manufacture or treatment specially adapted for the organic devices covered by this subclass using temporary substrates
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/10Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
    • H10N10/17Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80Constructional details
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68318Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381Details of chemical or physical process used for separating the auxiliary support from a device or wafer
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/16Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

本公开提供一种承载装置,该承载装置包括:承载部件,用于承载待承物;粘附元件,设置在所述承载部件上,所述粘附元件的粘性可变以实现待承物与所述承载装置的粘附与分离;支撑件,设置在所述承载部件上,用于支撑所述待承物。本公开提供的承载装置能够在真空环境下快速地实现基板或器件的吸附和分离。

Description

承载装置
技术领域
本公开涉及显示技术领域,尤其涉及一种承载装置。
背景技术
在现有技术下,有机发光二极管(OLED)器件中的有机功能层主要采用真空热蒸镀法制备。蒸发材料存放于蒸发源中的坩埚内,通过加热器对坩埚进行加热使蒸发材料升华,有机蒸汽从喷射机构喷出沉积于基板的蒸镀面上,在基板表面形成均匀的有机薄膜。现有蒸镀设备多采用基板蒸镀面向下的形式,可以提高材料的利用率并且避免蒸镀过程中产生的灰尘颗粒落在蒸镀面。现有设备多采用普通粘性物体吸着基板背面以减小弯曲,但在基板分离时易发生基板破裂。
除了有机发光二极管(OLED)器件的生产制备过程中涉及处理基板时对基板的承载问题,在其他显示器件或者半导体器件的制备过程中,如果需要在高真空中处理,也会涉及到基板或器件的承载问题。
现有技术中亟需一种承载装置,可应用于高真空的蒸镀过程中承载基板或其他器件。
发明内容
鉴于现有技术中的上述问题,本发明提供一种承载装置,能够在真空环境下快速地实现基板或器件的吸附和分离。
该承载装置包括:承载部件,用于承载待承物;粘附元件,设置在所述承载部件上,所述粘附元件的粘性可变以实现待承物与所述承载装置的粘附与分离;支撑件,设置在所述承载部件上,用于支撑所述待承物。
其中,所述粘附元件还包括可变温度的元件和设置在所述可变温度的元件上的热敏胶,通过所述元件的温度变化来改变所述热敏胶的粘性。
其中,所述支撑件与所述粘附元件交替设置。
其中,所述可变温度的元件为帕尔贴半导体元件。
其中,所述帕尔贴半导体元件包括半导体层,分别设置在半导体层上下表面上的上导电层和下导电层,分别设置在所述上导电层和所下导电层的远离所述半导体层的表面上的绝缘层。
其中,所述半导体层包括n型半导体材料和p型半导体材料形成的电偶对。
其中,所述承载装置还包括电源装置,与所述帕尔贴半导体元件连接,向所述帕尔贴半导体元件提供方向可变的电流,加热和制冷所述帕尔贴半导体元件。
其中,所述支撑件为可升降的支撑件。
其中,所述承载装置还包括驱动机构,与所述支撑件连接,用于驱动所述基板支撑件上下运动。
其中,所述基板支撑件包括柔性结构和刚性结构,所述刚性结构与所述承载部件接触,所述柔性结构设置在所述刚性结构上。
根据本实施例的承载装置,通过采用可变粘性的热敏胶和可变温度的元件,解决真空环境下基板的固定;可变粘性的热敏胶粘附着基板,可供工艺面向下的基板完成相关制程;通过基于帕尔帖效应的热电制冷/制热而改变热敏胶的粘性,完成对基板的吸附、分离过程;基板吸附和分离动作都可在真空环境下完成;而且能够快速地实现基板的吸附和分离。
附图说明
图1为根据本公开实施例的承载装置的结构示意图。
图2为根据本公开实施例的粘附元件的结构示意图。
图3为根据本公开实施例的粘附元件的结构示意图。
图4为根据本公开实施例的粘附元件的结构示意图。
图5为根据本公开实施例的承载装置承载待承物时的结构示意图。
图6为根据本公开实施例的支撑件的侧视结构示意图
具体实施方式
下面结合附图和实施例对本公开作进一步的详细说明。可以理解的是,此处所描述的具体实施例仅用于解释本公开,而非对本公开的限定。另外还需要说明的是,为了便于描述,附图中仅示出了与本公开相关的部分而非全部结构。
实施例一
本实施例提供一种承载装置,图1为根据本实施例的承载装置的结构示意图。
如图1所示,该承载装置包括:承载部件1,用于承载待承物,这里的待承物一般情况下为显示装置的基板,也可以为其他器件,在下面的描述中以待承物为OLED的基板为例,但实施例不限于此;粘附元件2,设置在所述承载部件上,所述粘附元件的粘性可变以实现待承物与所述承载装置的粘附与分离;支撑件3,设置在所述承载部件上,用于支撑所述待承物。
图2为根据本公开实施例的粘附元件的结构示意图。如图2所示,根据本实施例的粘附元件2包括元件5和设置在元件上的热敏胶4。通过所述元件的温度变化来改变所述热敏胶4的粘性。如图2中的a图所示,在元件5上覆盖热敏胶4,热敏胶4与元件5是可分离的;如图2中的b图所示,热敏胶4覆盖在元件5上。
元件5可以为帕尔贴半导体元件。所述帕尔贴半导体元件包括半导体层,半导体层包括p型半导体材料和n型半导体材料形成的电偶对,也就是半导体层包括p型半导体元件5-1和n型半导体元件5-2,分别设置在半导体层上下表面上的上导电层和下导电层8,分别设置在所述上导电层上和所下导电层的远离所述半导体层的表面上的绝缘层7。
帕尔贴半导体元件5还包括与p型半导体元件5-1连接的电极接头6-1和与n型半导体元件5-2连接的电极接头6-2,所述电极接头6-1和6-2与外部电源连接,使得半导体元件中有电流通过,并且可以通过改变电极接头连接的电极极性,进而基于帕尔贴效应改变半导体元件5的温度。
如图3所示,此时电极接头6-1接电源的正极,电极接头6-2接电源的负极,基于帕尔贴效应,电流由与P型元件5-1连接的电极接头6-1流入,流向与N型元件5-2连接的电极接头6-2,释放热量,使得半导体元件的温度升高,与半导体元件5接触的热敏胶4的粘性加大。
如图4所示,此时电极接头6-1接电源的负极,电极接头6-2接电源的正极,电流由N型元件5-2连接的电极接头6-2流入,流向与与P型元件5-1连接的电极接头6-1,吸收热量,使得元件的温度降低,与元件5接触的热敏胶4的失去粘性。
所述支撑件与所述粘附元件交替设置,而且所述支撑件为可升降的支撑件。当支撑件升起时可以将基板托起,便于搬运;支撑件下落时,支撑件的顶端与粘附元件2在同一水平面上,此时粘附元件2与基板接触,实现对基板的粘附。
接下来结合图5详细描述根据本实施的承载装置承载基板的工作过程。图5为根据本公开实施例的承载装置承载待承物时的结构示意图。
承载装置101承载着基板9,进入到吸附/分离位置,也就是基板要经受工艺处理的位置,在工艺处理过程中,基板9需要稳定地固定在承载装置上。当需要粘附基板时,支撑件3下降,支撑件3的顶端与粘附元件2在同一水平面上,此时粘附元件2与基板接触,基于帕尔帖效应,粘附元件2中的半导体元件升温,进而粘附元件2升温使得热敏胶的粘性加大,将基板粘附于热敏胶表面,实现基板稳定地固定在。粘附元件2中的元件升温方式已经在以上进行过描述,在此不再赘述。
当对基板的处理完毕,需要分离基板时,粘附元件2中的元件降温,进而粘附元件温度降低使得热敏胶失去粘性,热敏胶与基板分离,支撑件3升起,基板由支撑件3顶起,再由机械手取走,支撑件3再落回。
所述承载装置还包括电源装置(图中未示出),与所述帕尔贴半导体元件连接,向所述帕尔贴半导体元件提供方向可变的电流,加热和制冷所述帕尔贴半导体元件。
所述承载装置还包括驱动机构(图中未示出),与所述支撑件3连接,用于驱动所述基板支撑件3上下运动。
另外,图6示出了根据本实施例的支撑件3的侧视结构示意图。如图6所示,所述支撑件包括柔性结构3-1和刚性结构3-2,所述刚性结构与所述承载部件1接触,所述柔性结构3-1设置在所述刚性结构3-2上。在承载基板时柔性结构3-1与基板接触可与减小对基板的损害,刚性结构则提供牢固的支撑。
帕尔贴半导体元件用作半导体制冷片,其热惯性非常小,制冷制热时间很快,在热端散热良好冷端空载的情况下,通电不到一分钟,制冷片就能达到最大温差。
根据本实施例的承载装置,通过采用可变粘性的热敏胶和可变温度的半导体元件,解决真空环境下基板的固定;可变粘性的热敏胶粘附着基板,可供工艺面向下的基板完成相关制程;通过帕尔帖效应,热电制冷/制热而改变热敏胶的粘性,完成对基板的吸附、分离过程;基板吸附和分离动作都可在真空环境下完成;而且半导体元件的热惯性非常小,制冷制热时间快,能够快速地实现基板的吸附和分离。
本领域技术人员应当理解,本公开不限于这里所述的特定实施例,对本领域技术人员来说能够进行各种明显的变化、重新调整和替代而不会脱离本公开的保护范围。因此,虽然通过以上实施例对本公开进行了较为详细的说明,但是本公开不仅仅限于以上实施例,在不脱离本公开构思的情况下,还可以包括更多其他等效实施例,而本公开的范围由所附的权利要求决定。

Claims (10)

1.一种承载装置,包括:
承载部件,用于承载待承物;
粘附元件,设置在所述承载部件上,所述粘附元件的粘性可变以实现待承物与所述承载装置的粘附与分离;
支撑件,设置在所述承载部件上,用于支撑所述待承物。
2.根据权利要求1所述的承载装置,所述粘附元件还包括可变温度的元件和设置在所述可变温度的元件上的热敏胶,通过所述元件的温度变化来改变所述热敏胶的粘性。
3.根据权利要求1或2所述的承载装置,所述支撑件与所述粘附元件交替设置。
4.根据权利要求1或2所述的承载装置,所述可变温度的元件为帕尔贴半导体元件。
5.根据权利要求4所述的承载装置,所述帕尔贴半导体元件包括半导体层,分别设置在半导体层上下表面上的上导电层和下导电层,分别设置在所述上导电层和所下导电层的远离所述半导体层的表面上的绝缘层。
6.根据权利要求5所述的承载装置,所述半导体层包括n型半导体材料和p型半导体材料形成的电偶对。
7.根据权利要求4所述的承载装置,所述承载装置还包括电源装置,与所述帕尔贴半导体元件连接,向所述帕尔贴半导体元件提供方向可变的电流,加热和制冷所述帕尔贴半导体元件。
8.根据权利要求1或2所述的承载装置,所述支撑件为可升降的支撑件。
9.根据权利要求8所述的承载装置,所述承载装置还包括驱动机构,与所述支撑件连接,用于驱动所述支撑件上下运动。
10.根据权利要求8所述的承载装置,所述支撑件包括柔性结构和刚性结构,所述刚性结构与所述承载部件接触,所述柔性结构设置在所述刚性结构上。
CN201810019376.5A 2018-01-09 2018-01-09 承载装置 Pending CN108598038A (zh)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN201810019376.5A CN108598038A (zh) 2018-01-09 2018-01-09 承载装置
US16/176,209 US11315814B2 (en) 2018-01-09 2018-10-31 Carrying apparatus and carrying method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201810019376.5A CN108598038A (zh) 2018-01-09 2018-01-09 承载装置

Publications (1)

Publication Number Publication Date
CN108598038A true CN108598038A (zh) 2018-09-28

Family

ID=63599780

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201810019376.5A Pending CN108598038A (zh) 2018-01-09 2018-01-09 承载装置

Country Status (2)

Country Link
US (1) US11315814B2 (zh)
CN (1) CN108598038A (zh)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112885232A (zh) * 2019-11-29 2021-06-01 海信视像科技股份有限公司 一种显示装置
CN113061848A (zh) * 2021-03-25 2021-07-02 南京昀光科技有限公司 一种蒸发源
CN113058767A (zh) * 2021-03-05 2021-07-02 Tcl华星光电技术有限公司 支撑柱及对位机构

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004346398A (ja) * 2003-05-23 2004-12-09 Sekisui Chem Co Ltd 磁性材料基板の成膜装置
CN101692428A (zh) * 2009-09-09 2010-04-07 贵州振华风光半导体有限公司 工作温度可控混合集成电路的集成方法
CN105575866A (zh) * 2016-01-06 2016-05-11 京东方科技集团股份有限公司 搬送装置、搬送方法及蒸镀设备
CN105734494A (zh) * 2016-04-12 2016-07-06 京东方科技集团股份有限公司 一种蒸镀载板及蒸镀装置
CN206098367U (zh) * 2016-10-28 2017-04-12 合肥鑫晟光电科技有限公司 传输装置和蒸镀设备
CN107393860A (zh) * 2017-07-20 2017-11-24 京东方科技集团股份有限公司 一种基板传送装置及方法、蒸镀设备

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102782069B (zh) * 2009-04-27 2014-03-19 艾利丹尼森公司 用于根据需要运送和脱粘的系统、方法和材料

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004346398A (ja) * 2003-05-23 2004-12-09 Sekisui Chem Co Ltd 磁性材料基板の成膜装置
CN101692428A (zh) * 2009-09-09 2010-04-07 贵州振华风光半导体有限公司 工作温度可控混合集成电路的集成方法
CN105575866A (zh) * 2016-01-06 2016-05-11 京东方科技集团股份有限公司 搬送装置、搬送方法及蒸镀设备
CN105734494A (zh) * 2016-04-12 2016-07-06 京东方科技集团股份有限公司 一种蒸镀载板及蒸镀装置
CN206098367U (zh) * 2016-10-28 2017-04-12 合肥鑫晟光电科技有限公司 传输装置和蒸镀设备
CN107393860A (zh) * 2017-07-20 2017-11-24 京东方科技集团股份有限公司 一种基板传送装置及方法、蒸镀设备

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112885232A (zh) * 2019-11-29 2021-06-01 海信视像科技股份有限公司 一种显示装置
CN112885232B (zh) * 2019-11-29 2024-04-12 海信视像科技股份有限公司 一种显示装置
CN113058767A (zh) * 2021-03-05 2021-07-02 Tcl华星光电技术有限公司 支撑柱及对位机构
CN113061848A (zh) * 2021-03-25 2021-07-02 南京昀光科技有限公司 一种蒸发源
CN113061848B (zh) * 2021-03-25 2023-03-10 南京昀光科技有限公司 一种蒸发源

Also Published As

Publication number Publication date
US20190214286A1 (en) 2019-07-11
US11315814B2 (en) 2022-04-26

Similar Documents

Publication Publication Date Title
US10991846B2 (en) Method of manufacturing micro light-emitting element array, transfer carrier, and micro light-emitting element array
CN108598038A (zh) 承载装置
US11798919B2 (en) Transfer carrier and manufacturing method thereof, and method for transferring light-emitting diode chip
US9761556B2 (en) Method of manufacturing electronic device
US10290785B2 (en) Laminating structure of electronic device using transferring element, transferring apparatus for fabricating the electronic device and method for fabricating the electronic device
US11222833B2 (en) Micro-heaters in a film structure mounted on a substrate between a plurality of electronic components
CN111696932A (zh) 芯片固接结构及芯片固接设备
CN106814422A (zh) 一种基于tec的光子芯片温控结构
CN202454549U (zh) 一种基于铝基碳化硅的陶瓷封装功率元器件散热结构
CN112967970B (zh) 一种转移方法及显示背板
CN211088316U (zh) 一种宽温硅基oled显示模组
KR101241271B1 (ko) 필름형 인쇄회로 부착방식의 led 모듈 제조 방법
CN111668171B (zh) 芯片承载结构及芯片承载设备
JP2019169702A (ja) 熱電マイクロ冷却器(変形)を製造する方法
WO2021093014A1 (zh) 背光模组及其制备方法
CN203351644U (zh) 覆晶式led支架和表面贴装led
US12062642B2 (en) Mass transfer device, manufacturing method thereof and display apparatus
CN114975728A (zh) 一种三基色Micro-LED芯片的转移方法
CN112216643B (zh) 转移微型元件的方法
CN108899351A (zh) 一种显示面板及显示装置
KR101535440B1 (ko) 필름형 인쇄회로 부착방식의 led 조명모듈 및 그 제조방법
CN114300500B (zh) Micro LED芯片组件、显示面板及制造方法
KR101810432B1 (ko) 열전소자 방열판의 전극 부착장치
US20240063190A1 (en) Led chip transfer method and display panel
CN103258863B (zh) 一种提高iii-v族化合物电子器件散热性的方法

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
RJ01 Rejection of invention patent application after publication

Application publication date: 20180928

RJ01 Rejection of invention patent application after publication