WO2021093014A1 - 背光模组及其制备方法 - Google Patents

背光模组及其制备方法 Download PDF

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Publication number
WO2021093014A1
WO2021093014A1 PCT/CN2019/120567 CN2019120567W WO2021093014A1 WO 2021093014 A1 WO2021093014 A1 WO 2021093014A1 CN 2019120567 W CN2019120567 W CN 2019120567W WO 2021093014 A1 WO2021093014 A1 WO 2021093014A1
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Prior art keywords
thermoelectric
layer
backlight module
device group
heat
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PCT/CN2019/120567
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English (en)
French (fr)
Inventor
侯伟康
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Tcl华星光电技术有限公司
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Priority to US16/640,360 priority Critical patent/US11374156B2/en
Publication of WO2021093014A1 publication Critical patent/WO2021093014A1/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133602—Direct backlight
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/641—Heat extraction or cooling elements characterized by the materials
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
    • F21V29/50—Cooling arrangements
    • F21V29/54—Cooling arrangements using thermoelectric means, e.g. Peltier elements
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V33/00—Structural combinations of lighting devices with other articles, not otherwise provided for
    • F21V33/0004—Personal or domestic articles
    • F21V33/0052—Audio or video equipment, e.g. televisions, telephones, cameras or computers; Remote control devices therefor
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133628—Illuminating devices with cooling means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
    • H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133602—Direct backlight
    • G02F1/133603—Direct backlight with LEDs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0075—Processes relating to semiconductor body packages relating to heat extraction or cooling elements

Definitions

  • the present disclosure relates to the field of display, in particular to a backlight module and a preparation method thereof.
  • Liquid crystal display devices are widely used, and the backlight module is an important component in the liquid crystal display, which directly affects the color performance of the display device.
  • LED lamps are used as the backlight source of the backlight module.
  • the LED lamp will generate a lot of heat during long-term operation, and high temperature will seriously affect the performance and service life of the LED.
  • White LEDs will reduce the luminous efficiency at high temperatures and even cause color shift; for QLED display panels, quantum dots will be quenched at high temperatures; in addition, the high temperature of the backlight module will affect the deflection of the liquid crystals and cause abnormalities or light leakage.
  • the commonly used heat sink is to dissipate heat through a heat-dissipating metal plate.
  • the LED light bar/light board is directly in contact with the heat-dissipating metal plate, and the heat-dissipating metal plate is fixedly connected to the back plate, and the heat generated by the LED light bar/light board is transferred to the heat-dissipating metal plate Then, heat is dissipated through the contact surface between the heat dissipating metal plate and the back plate.
  • the heat dissipation method between the LED lamp board and the heat dissipation metal plate and the backplane is passive heat dissipation, and there is an air gap, which results in low heat conduction efficiency between the layers, and the generated heat cannot be efficiently dissipated, which is easy to cause heat. accumulation.
  • the purpose of the present disclosure is to provide a backlight module and a preparation method thereof to solve the technical problems in the prior art that the backlight module has low heat dissipation efficiency and is difficult to recover after heat dissipation.
  • the present disclosure provides a backlight module, including a frame, a thermoelectric device group, a first heat conductive layer, and a light board; the thermoelectric device group is arranged on the inner bottom surface of the frame; the first heat conductive layer It is arranged on the surface of the thermoelectric device group on the side away from the frame; the light board is arranged on the surface of the first heat conducting layer on the side away from the frame.
  • the backlight module further includes a phase change heat storage layer and an energy storage device, the phase change heat storage layer is provided on the inner bottom surface of the frame, and one side surface is connected to the inner side wall of the frame; One end of the energy storage device is electrically connected to the thermoelectric device group, and the other end is electrically connected to the driving circuit.
  • the backlight module further includes the second heat conductive layer disposed on the inner bottom surface of the frame and connected to one side edge of the thermoelectric device group.
  • the backlight module further includes a phase change heat storage layer and an energy storage device.
  • the phase change heat storage layer is provided on the inner bottom surface of the frame, one side is connected to the inner side wall of the frame, and the other One side is connected to the second heat conduction layer; one end of the energy storage device is electrically connected to the thermoelectric device group, and the other end is electrically connected to the driving circuit.
  • the height of the second heat conduction layer is less than or equal to the height of the phase change heat storage layer.
  • the material of the phase change heat storage layer includes at least one of crystalline hydrated salt, molten salt, metal or alloy, paraffin, and fatty acid; and/or, the material of the first heat conduction layer is thermally conductive silicone grease, At least one of alumina thermally conductive rubber and boron nitride thermally conductive rubber; and/or, the material of the second thermally conductive layer is at least one of thermally conductive silicone grease, alumina thermally conductive rubber, and boron nitride thermally conductive rubber.
  • the present disclosure also provides a method for preparing a backlight module, which includes the following steps: a thermoelectric device group installation step, two sets of thermoelectric devices are installed on the inner bottom surface of a frame to form a thermoelectric device group; preparation of a first thermal conductive layer Step, coating a thermoelectric conductive material on the upper surface of the thermoelectric device group to form a first heat conductive layer; a light board installation step, installing a light board above the thermoelectric device group, and connecting the lower surface of the light board to the first heat conducting layer; A heat conduction layer.
  • the light board installation step further includes a phase change heat storage layer preparation step, a phase change heat storage layer is prepared on the bottom surface of the inner side of the frame, and one side of the phase change heat storage layer is connected to the frame of the frame.
  • the light board installation step further includes a second heat conductive layer preparation step, in which a thermoelectric conductive material is coated on the bottom surface of the inner side of the frame to form a second heat conductive layer.
  • the second heat conduction layer preparation step it further includes a phase change heat storage layer preparation step, a phase change heat storage layer is prepared on the inner bottom surface of the frame, and one side of the phase change heat storage layer is connected to the frame.
  • the inner side wall of the body, and the other side surface is connected to the second heat conduction layer; and the energy storage device installation step is to install an energy storage device in the frame body, and one end of the energy storage device is electrically connected to the thermoelectric device group , The other end is electrically connected to the drive circuit.
  • the technical effect of the present disclosure is to provide a backlight module and a preparation method thereof.
  • a heat conduction layer at the junction between the thermoelectric device group and the LED lamp board By providing a heat conduction layer at the junction between the thermoelectric device group and the LED lamp board, the heat dissipation efficiency is further improved and the heat dissipation effect is improved.
  • a heat conduction layer and a phase change heat storage layer are arranged between the frame body and the thermoelectric device group in the frame to transfer the heat of the thermoelectric device group to the phase change heat storage layer, thereby realizing the recovery and utilization of the heat of the lamp panel .
  • FIG. 1 is a cross-sectional view of the backlight module of Embodiment 1;
  • Fig. 2 is a plan view of the backlight module of the embodiment 1;
  • Fig. 3 is a working principle diagram of the thermoelectric device group according to embodiment 1;
  • Fig. 4 is a working principle diagram of the thermoelectric device of embodiment 1;
  • FIG. 5 is a flowchart of a method for manufacturing the backlight module described in Embodiment 1;
  • FIG. 6 is a cross-sectional view of the backlight module of Embodiment 2;
  • FIG. 7 is a plan view of the backlight module of Embodiment 2.
  • FIG. 8 is a flowchart of a method for preparing the backlight module described in Embodiment 3;
  • Fig. 10 is a plan view of the backlight module according to the third embodiment.
  • FIG. 11 is a flow chart of the method for preparing the backlight module described in Embodiment 3.
  • FIG. 13 is a plan view of the backlight module of Embodiment 4.
  • thermoelectric device group 1 frame body; 2 thermoelectric device group;
  • thermoelectric device 21 substrate; 22 thermoelectric film layer;
  • thermoelectric arm 201 thermoelectric arm; 202 electrode;
  • thermoelectric arm 2011 first thermoelectric arm; 2012 second thermoelectric arm;
  • the backlight module is a direct type backlight module and includes a frame body 1, a thermoelectric device group 2, a first thermal conductive layer 3, and a light board 4.
  • the frame body 1 is made of aluminum plate, which plays a supporting role.
  • the thermoelectric device group 2 is provided on the inner bottom surface of the frame 1.
  • the thermoelectric device group 2 includes a flexible substrate 21 and a thermoelectric thin film layer 22.
  • the flexible substrate 21 is provided on the inner bottom surface of the frame 1, and the flexible substrate 2 is preferably a PI substrate.
  • the thermoelectric film layer 22 is attached to the upper surface of the flexible substrate 21 and has a thickness of 0.25 mm to 5 mm.
  • the thermoelectric device group 2 includes at least two sets of thermoelectric devices 20 arranged oppositely.
  • the thermoelectric device 20 is a thermoelectric thin film device, which is smaller in volume, more flexible in structure, and space-saving compared with a thermoelectric bulk device.
  • the current directions of the two groups of thermoelectric devices 20 are opposite, the direction of current I1 of the first group of thermoelectric devices 20 is clockwise, and the direction of current I2 of the other group of thermoelectric devices 20 is counterclockwise.
  • the hot end of each thermoelectric device 20 is set at the edge of the frame 1, and the cold end is set at the center of the frame 1.
  • the thermoelectric thin film layer 22 in this embodiment is two sets of thermoelectric devices 20 arranged oppositely.
  • Each thermoelectric device 20 includes two thermoelectric arms 201 and electrodes 202.
  • the thermoelectric arms 201 are strip-shaped.
  • Each thermoelectric arm 201 is connected in parallel to another thermoelectric arm 201 through the electrode 202.
  • the thermoelectric arm 201 can be divided into P-type thermoelectric arms and N-type thermoelectric arms, the number of thermoelectric arms can be determined according to the size of the frame.
  • the thermoelectric device 20 includes a first thermoelectric arm 2011, a second thermoelectric arm 2012 and an electrode 202.
  • the first thermoelectric arm 2011 is a p-type thermoelectric arm
  • the second thermoelectric arm 2012 is an n-type thermoelectric arm.
  • the first thermoelectric arm 2011 and the second thermoelectric arm 2012 are electrically connected by an electrode 202, and one end of the electrode 202 is connected to the first thermoelectric arm.
  • the other end of the arm 2011 is connected to the second thermoelectric arm 2012.
  • thermoelectric device group 2 when there is a temperature difference between the two ends of the thermoelectric device, due to the Seebeck effect (Seebeck effect) effect) is also known as the first thermoelectric effect.
  • thermoelectric cooling When a current is applied to the thermoelectric device, due to the Peltier effect, the carriers (electrons) in the n-type thermoelectric arm material and the carriers (holes) in the p-type thermoelectric arm material are applied in an external electric field Under the action of, the two types of thermoelectric arms will migrate from the lower end to the upper end respectively. At the same time, it will carry the heat from the lower end of the thermoelectric arm and input the heat to the upper end of the device. This is the most basic principle of thermoelectric cooling.
  • thermoelectric device is a functional device that can realize the mutual conversion of electric energy and heat energy.
  • the thermoelectric device realizes thermoelectric power generation and electric refrigeration based on the Seebeck effect and Peltier effect of materials, respectively.
  • the thermoelectric device does not have a relatively complicated mechanical transmission structure, does not require the refrigerant necessary for a traditional refrigeration device, and the device has a fast response speed, a quiet working process, no noise, precise temperature control, environmental friendliness, and a long service life.
  • the first thermal conductive layer 3 is provided on the upper surface of the thermoelectric device group 2, see FIGS. 1 and 2.
  • the material of the first thermal conduction layer 3 is at least one of thermally conductive silicone grease, alumina thermally conductive rubber, and boron nitride thermally conductive rubber, which is used to conduct heat and has high heat dissipation efficiency.
  • the lamp board 4 is arranged on the upper surface of the first heat conductive layer 3.
  • the light board 4 includes a board body 41 and an LED lamp 42.
  • the LED lamp 42 is arranged on the upper surface of the board body 41 and is electrically connected to the thermoelectric device 20.
  • This embodiment provides a backlight module, which further improves the heat dissipation efficiency and improves the heat dissipation effect by arranging a first heat conduction layer at the junction between the thermoelectric device group and the LED lamp board.
  • this embodiment also provides a method for manufacturing a backlight module, which includes the following steps S11) to S14).
  • thermoelectric thin film layer preparation step is to prepare the thermoelectric material on a flexible substrate to form a thermoelectric thin film layer by vacuum evaporation or magnetron sputtering or screen printing, and the thermoelectric thin film layer is formed after being encapsulated and assembled.
  • the thermoelectric device group is to prepare the thermoelectric material on a flexible substrate to form a thermoelectric thin film layer by vacuum evaporation or magnetron sputtering or screen printing, and the thermoelectric thin film layer is formed after being encapsulated and assembled.
  • thermoelectric device group install two sets of thermoelectric devices 20 on the inner bottom surface of a frame 1 to form a thermoelectric device group 2, see Fig. 1.
  • thermoelectric conductive material is at least one of thermally conductive silicone grease, alumina thermally conductive rubber, and boron nitride thermally conductive rubber.
  • the light board installation step install the light board 4 above the thermoelectric device group 2, and the lower surface of the light board 4 is connected to the first thermal conductive layer 3, see Fig. 1.
  • the first heat conduction layer conducts the heat of the light board to the thermoelectric device group to realize efficient heat dissipation of the light board.
  • This embodiment provides a method for manufacturing a backlight module.
  • This embodiment provides a backlight module and a manufacturing method thereof, including most of the technical features of Embodiment 1, with the difference that the backlight module further includes a second heat conductive layer.
  • the present embodiment provides a backlight module, which includes a frame body 1, a thermoelectric device group 2, a first heat conduction layer 3, a light board 4, and a second heat conduction layer 5.
  • the second heat conduction layer 5 is provided on the inner bottom surface of the frame body 1 and connected to one side edge of the thermoelectric device group 2. Specifically, one side of the second thermal conductive layer 5 is connected to the inner side wall of the frame body 1, and the other side is connected to the thermoelectric device group 2.
  • the material of the second thermal conductive layer 5 is at least one of thermally conductive silicone grease, alumina thermally conductive rubber, and boron nitride thermally conductive rubber.
  • the second heat conduction layer 5 can speed up the heat dissipation effect of the light board, further improve the heat dissipation efficiency, and improve the heat dissipation effect.
  • this embodiment also provides a method for manufacturing a backlight module, which includes the following steps S21) to S25).
  • thermoelectric thin film layer preparation step is to prepare a thermoelectric material on a flexible substrate to form a thermoelectric thin film layer by vacuum evaporation or magnetron sputtering or screen printing, and the thermoelectric thin film layer is formed after being encapsulated and assembled The thermoelectric device group.
  • thermoelectric device group installation step install two sets of thermoelectric devices 20 on the inner bottom surface of a frame 1 to form a thermoelectric device group 2, see FIG. 6.
  • thermoelectric conductive material is at least one of thermally conductive silicone grease, alumina thermally conductive rubber, and boron nitride thermally conductive rubber.
  • the light board installation step install the light board 4 above the thermoelectric device group 2, and the lower surface of the light board 4 is connected to the first thermal conductive layer 3, see Fig. 6.
  • the first heat conduction layer conducts the heat of the light board to the thermoelectric device group to realize efficient heat dissipation of the light board.
  • thermoelectric conductive material is at least one of thermally conductive silicone grease, alumina thermally conductive rubber, and boron nitride thermally conductive rubber.
  • the second heat conduction layer can speed up the heat dissipation effect of the light board, further improve the heat dissipation efficiency, and improve the heat dissipation effect.
  • This embodiment provides a backlight module and a manufacturing method thereof.
  • the first heat conduction layer is provided at the junction between the thermoelectric device group and the LED lamp board, and the second heat conduction layer is provided between the thermoelectric device group and the inner side wall of the frame.
  • the layer can speed up the heat dissipation effect of the light board, further improve the heat dissipation efficiency, and improve the heat dissipation effect.
  • This embodiment provides a backlight module and a manufacturing method thereof, including most of the technical features of Embodiment 1.
  • the backlight module further includes a phase change heat storage layer and an energy storage device.
  • this embodiment provides a backlight module, which is a direct type backlight module and includes a frame body 1, a thermoelectric device group 2, a first thermal conductive layer 3, a light board 4, The phase change heat storage layer 6 and the energy storage device 7.
  • the phase change heat storage layer 6 is provided on the inner bottom surface of the frame body 1, one side surface thereof is connected to the inner side wall of the frame body 1, and the other side surface is connected to the thermoelectric device group 2, see FIGS. 9-10.
  • the material of the phase change heat storage layer 6 includes at least one of crystal hydrated salt, molten salt, metal or alloy, paraffin wax, and fatty acid.
  • the height of the second heat conductive layer 5 is less than or equal to the height of the phase change heat storage layer 6. Since the thermoelectric thin film layer 22 is thinner, which results in a poor heat storage effect, the heat storage effect is enhanced by increasing the thickness of the phase change heat storage layer 6.
  • thermoelectric device group 2 One end of the energy storage device 7 is electrically connected to the thermoelectric device group 2, and the other end is electrically connected to a driving circuit, which is a TFT driving circuit.
  • the LED lamp 41 conducts heat more efficiently to the thermoelectric device group 2 through the first thermal conductive layer 3, and the thermoelectric device group 2 transports the heat from the center of the thermoelectric arm 201 to both ends.
  • the heat is concentrated at the frame bodies 1 on both sides of the backlight module, so as to realize the heat dissipation effect of the backlight module.
  • Phase-change heat storage layers 6 are provided on both sides of the frame body 1, and the heat concentrated at the frame bodies 1 on both sides of the backlight module is subjected to heat recovery processing.
  • the thermoelectric device group 2 conducts heat to the phase change heat storage layer 6.
  • the material of the phase change heat storage layer 6 undergoes a solid-solid phase transition or a solid-liquid phase transition after being heated to store heat, and at the same time take away the heat from the hot end of the thermoelectric device group 2, so that the thermoelectric device group 2 continuously turns the LED lights
  • the heat of 41 is transported to the phase change heat storage layer 6.
  • the display device is turned off, the LED lamp 41 is extinguished, and the phase change heat storage layer 6 undergoes a solid-solid phase transition or a liquid-solid phase transition, thereby releasing heat.
  • the energy storage device 7 is connected to the TFT driving circuit, which can be used when the display device is working. Circuit drive.
  • the backlight module provided by this embodiment adopts thermoelectric devices with excellent active heat dissipation performance and the function of converting heat into electric energy.
  • the backlight module By using the thermoelectric device group in conjunction with the phase-change heat storage layer, the backlight module The precise temperature control and heat recovery of the LED light source realize the recycling of energy, reduce energy consumption, and efficiently improve energy utilization.
  • this embodiment also provides a method for manufacturing a backlight module, which includes the following steps S31) to S36).
  • thermoelectric thin film layer preparation step is to prepare a thermoelectric material on a flexible substrate to form a thermoelectric thin film layer by vacuum evaporation or magnetron sputtering or screen printing, and the thermoelectric thin film layer is formed after being encapsulated and assembled The thermoelectric device group.
  • thermoelectric device group install two sets of thermoelectric devices 20 on the inner bottom surface of a frame 1 to form a thermoelectric device group 2, see FIG. 9.
  • thermoelectric conductive material is at least one of thermally conductive silicone grease, alumina thermally conductive rubber, and boron nitride thermally conductive rubber, which is used to conduct heat and has high heat dissipation efficiency.
  • phase change heat storage layer preparation step the phase change heat storage layer 6 is prepared on the inner bottom surface of the frame 1, one side of the phase change heat storage layer 6 is connected to the inner side wall of the frame 1, and the other side is connected to the second heat conduction layer 5.
  • the material of the phase change heat storage layer 6 includes at least one of crystal hydrated salt, molten salt, metal or alloy, paraffin wax, and fatty acid.
  • the height of the second heat conductive layer 5 is less than or equal to the height of the phase change heat storage layer 6. Since the thermoelectric thin film layer 22 is thinner, which results in a poor heat storage effect, the heat storage effect is enhanced by increasing the thickness of the phase change heat storage layer 6.
  • the energy storage device installation step install an energy storage device 7 in the frame 1, one end of the energy storage device 7 is electrically connected to the thermoelectric device group 2, and the other end is electrically connected to the drive circuit, see FIG.
  • the energy storage device 7 can realize the heat recovery of the thermoelectric device group 2 on the one hand, and can provide current for the drive circuit on the other hand.
  • This embodiment provides a backlight module and a preparation method thereof.
  • a first heat conduction layer at the junction between the thermoelectric device group and the LED lamp board, the heat dissipation efficiency is further improved and the heat dissipation effect is improved.
  • a phase change heat storage layer is arranged between the frame body and the thermoelectric device group in the frame, and the heat of the thermoelectric device group is transferred to the phase change heat storage layer, so as to realize the recovery and utilization of the heat of the lamp panel.
  • This embodiment provides a backlight module and a manufacturing method thereof, including most of the technical features of Embodiment 3, and further including a second thermal conductive layer.
  • the backlight module is a direct type backlight module and includes a frame body 1, a thermoelectric device group 2, a first heat conduction layer 3, a light board 4, The second heat conduction layer 5, the phase change heat storage layer 6 and the energy storage device 7.
  • the second heat conduction layer 5 is provided on the inner bottom surface of the frame body 1 and connected to one side edge of the thermoelectric device group 2.
  • the material of the second thermal conductive layer 5 is at least one of thermally conductive silicone grease, alumina thermally conductive rubber, and boron nitride thermally conductive rubber.
  • the phase change heat storage layer 6 is provided on the inner bottom surface of the frame body 1, one side surface is connected to the inner side wall of the frame body 1, and the other side surface is connected to the second heat conducting layer 5; one end of the energy storage device 7 is electrically connected to the thermoelectric device group 2; The other end is electrically connected to the driving circuit.
  • the LED lamp 41 conducts heat more efficiently to the thermoelectric device group 2 through the first heat conduction layer 3, and the thermoelectric device group 2 transports the heat from the center of the thermoelectric arm 201 to both ends.
  • the heat is concentrated at the frame bodies 1 on both sides of the backlight module, so as to realize the heat dissipation effect of the backlight module.
  • Phase-change heat storage layers 6 are provided on both sides of the frame body 1, and the heat concentrated at the frame bodies 1 on both sides of the backlight module is subjected to heat recovery processing.
  • the thermoelectric device group 2 conducts heat more efficiently to the phase change heat storage layer 6 through the second heat conduction layer 5.
  • the material of the phase change heat storage layer 6 undergoes a solid-solid phase transition or a solid-liquid phase transition after being heated to store the heat, and at the same time take away the heat from the hot end of the thermoelectric device group 2, so that the thermoelectric device group 2 continuously turns the LED lights
  • the heat of 41 is transported to the phase change heat storage layer 6.
  • the display device is turned off, the LED lamp 41 is extinguished, and the phase change heat storage layer 6 undergoes a solid-solid phase transition or a liquid-solid phase transition, thereby releasing heat.
  • the energy storage device 7 is connected to the TFT driving circuit, which can be used when the display device is working. Circuit drive.
  • the backlight module provided by this embodiment adopts a thermoelectric device with excellent active heat dissipation performance and the function of converting heat into electrical energy. By using it in conjunction with a phase-change heat storage layer, the backlight module can accurately monitor the LED light source. Temperature control and heat recovery and utilization realize the recycling of energy, reduce energy consumption, and efficiently improve energy utilization.
  • this embodiment also provides a method for manufacturing a backlight module, which includes the following steps S41) to S47).
  • thermoelectric thin film layer preparation step is to prepare a thermoelectric material on a flexible substrate to form a thermoelectric thin film layer by vacuum evaporation or magnetron sputtering or screen printing, and the thermoelectric thin film layer is formed after being packaged and assembled The thermoelectric device group.
  • thermoelectric device group installation step install two sets of thermoelectric devices 20 on the inner bottom surface of a frame 1 to form a thermoelectric device group 2, see FIG. 12.
  • thermoelectric conductive material is at least one of thermally conductive silicone grease, alumina thermally conductive rubber, and boron nitride thermally conductive rubber, which is used to conduct heat and has high heat dissipation efficiency.
  • thermoelectric conductive material is at least one of thermally conductive silicone grease, alumina thermally conductive rubber, and boron nitride thermally conductive rubber, which is used to conduct heat and has high heat dissipation efficiency.
  • Phase change heat storage layer preparation step prepare a phase change heat storage layer 6 on the inner bottom surface of the frame body 1.
  • One side of the phase change heat storage layer 6 is connected to the inner side wall of the frame body 1, and the other side is connected to the second heat conduction layer 5.
  • the material of the phase change heat storage layer 6 includes at least one of crystal hydrated salt, molten salt, metal or alloy, paraffin wax, and fatty acid.
  • the height of the second heat conductive layer 5 is less than or equal to the height of the phase change heat storage layer 6. Since the thermoelectric thin film layer 22 is thinner, which results in a poor heat storage effect, the heat storage effect is enhanced by increasing the thickness of the phase change heat storage layer 6.
  • the energy storage device installation step install an energy storage device 7 in the frame 1, one end of the energy storage device 7 is electrically connected to the thermoelectric device group 2, and the other end is electrically connected to the drive circuit, see FIG.
  • the energy storage device 7 can realize the heat recovery of the thermoelectric device group 2 on the one hand, and can provide current for the drive circuit on the other hand.
  • the backlight module provided by this embodiment adopts a thermoelectric device with excellent active heat dissipation performance and the function of converting heat into electrical energy. By using it in conjunction with a phase-change heat storage layer, the backlight module can accurately monitor the LED light source in the backlight module. Temperature control and heat recovery and utilization realize energy recycling, reduce energy consumption, and efficiently improve energy utilization.
  • the technical effect of the present disclosure is to provide a backlight module and a preparation method thereof.
  • a first thermal conductive layer at the junction between the thermoelectric device group and the LED lamp board, the heat dissipation efficiency is further improved and the heat dissipation effect is improved.
  • a second heat conduction layer and a phase change heat storage layer are arranged between the frame body and the thermoelectric device group in the frame, so as to transfer the heat of the thermoelectric device group to the phase change heat storage layer, thereby realizing the heat of the lamp panel. recycle and re-use.

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Abstract

一种背光模组及其制备方法，背光模组包括框体（1）、热电器件组（2）、第一热传导层（3）以及灯板（4）；热电器件组（2）设于框体（1）内侧底面；第一热传导层（3）设于热电器件组（2）远离框体（1）一侧的表面；灯板（4）设于第一热传导层（3）远离框体（1）一侧的表面。

Description

背光模组及其制备方法
本申请要求于 2019年11月15日提交中国专利局、申请号为201911116697.8、发明名称为“一种背光模组及其制备方法”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本揭示涉及显示领域，尤其涉及一种背光模组及其制备方法。
 背景技术
液晶显示器件广泛应用，而背光模组是液晶显示器中的一个重要部件，直接影响显示设备的色彩表现情况。通常选用LED灯作为背光模组的背光源，对于直下式结构背光模组，LED灯在长时间工作过程中会产生大量的热量，高温会严重影响LED的性能和使用寿命。白光LED在高温时会降低发光效率，甚至是发生色偏；对于QLED显示面板，量子点在高温下会发生淬灭；另外，背光模组的高温会影响液晶的偏转而产生异常或漏光现象。目前，常用的散热装置是通过散热金属板进行散热，LED灯条/灯板直接与散热金属板接触，散热金属板与背板固定连接，LED灯条/灯板产生的热电传至散热金属板后，在通过散热金属板与背板之间的接触面进行散热。但现有技术的中，LED灯板与散热金属板、背板之间散热方式为被动散热，且存在空气间隙，导致各层之间导热效率低，产生的热量无法高效散去，易导致热量累积。
 技术问题
本揭示的目的在于，本揭示提供一种背光模组及其制备方法以解决现有技术中存在的背光模组散热效率低、热量散失后难以回收的技术问题。
 技术解决方案
为实现上述目的，本揭示提供一种背光模组，包括框体、热电器件组、第一热传导层以及灯板；所述热电器件组设于所述框体内侧底面；所述第一热传导层设于所述热电器件组远离所述框体一侧的表面；所述灯板设于所述第一热传导层远离所述框体一侧的表面。
进一步地，所述的背光模组还包括相变蓄热层、储能器件，所述相变蓄热层设于所述框体内侧底面，一侧面连接至所述框体的内侧壁；所述储能器件其一端电连接至所述热电器件组，另一端电连接至驱动电路。
进一步地，所述的背光模组还包括所述第二热传导层设于所述框体内侧底面，且连接至所述热电器件组的一侧边缘处。
进一步地，所述的背光模组还包括相变蓄热层以及储能器件，所述相变蓄热层设于所述框体内侧底面，一侧面连接至所述框体的内侧壁，另一侧面连接至所述第二热传导层；所述储能器件其一端电连接至所述热电器件组，另一端电连接至驱动电路。
进一步地，所述第二热传导层的高度小于或等于所述相变蓄热层的高度。
进一步地，所述相变蓄热层的材质包括结晶水合盐、熔融盐、金属或合金、石蜡、脂肪酸中的至少一种；和/或，所述第一热传导层的材质为导热硅脂、氧化铝导热橡胶、氮化硼导热橡胶中的至少一种；和/或，所述第二热传导层的材质为导热硅脂、氧化铝导热橡胶、氮化硼导热橡胶中的至少一种。
为了实现上述目的，本揭示还提供一种背光模组的制备方法，包括如下步骤：热电器件组安装步骤，在一框体内侧底面安装两组热电器件，形成热电器件组；第一热传导层制备步骤，在所述热电器件组的上表面涂布热电传导材料，形成第一热传导层；灯板安装步骤，在所述热电器件组上方安装灯板，所述灯板下表面连接至所述第一热传导层。
进一步地，在灯板安装步骤之后，还包括相变蓄热层制备步骤，在所述框体内侧底面制备相变蓄热层，所述相变蓄热层一侧面连接至所述框体的内侧壁；以及储能器件安装步骤，在所述框体内安装一储能器件，所述储能器件的一端电连接至所述热电器件组，另一端电连接至驱动电路。
进一步地，在灯板安装步骤之后，还包括第二热传导层制备步骤，在所述框体内侧底面涂布热电传导材料，形成第二热传导层。
进一步地，在第二热传导层制备步骤之后，还包括相变蓄热层制备步骤，在所述框体内侧底面制备相变蓄热层，所述相变蓄热层一侧面连接至所述框体的内侧壁，另一侧面连接至所述第二热传导层；以及储能器件安装步骤，在所述框体内安装一储能器件，所述储能器件的一端电连接至所述热电器件组，另一端电连接至驱动电路。
 有益效果
本揭示的技术效果在于，提供一种背光模组及其制备方法，通过在热电器件组与LED灯板之间衔接处设置热传导层，进一步提高散热效率，改善散热效果。进一步地，本揭示在框体与框体内的热电器件组之间设置热传导层及相变蓄热层，将热电器件组的热量传递到相变蓄热层，从而实现对灯板热量的回收利用。
 附图说明
为了更清楚地说明本揭示实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本揭示的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为实施例1所述背光模组的截面图；
图2为实施例1所述背光模组的平面图；
图3为实施例1所述热电器件组的工作原理图；
图4为实施例1所述热电器件的工作原理图；
图5为实施例1所述背光模组的制备方法的流程图；
图6为实施例2所述背光模组的截面图；
图7为实施例2所述背光模组的平面图；
图8为实施例3所述背光模组的制备方法的流程图；
图9为实施例3所述背光模组的截面图；
图10为实施例3所述背光模组的平面图；
图11为实施例3所述背光模组的制备方法的流程图；
图12为实施例4所述背光模组的截面图；
图13为实施例4所述背光模组的平面图；
图14为实施例4所述背光模组的制备方法的流程图。
附图中部件标识如下：
1框体；2热电器件组；
3第一热传导层；4灯板；
5第二热传导层；6相变蓄热层；7储能器件；
20热电器件；21基板；22热电薄膜层；
201热电臂；202电极；
2011第一热电臂；2012第二热电臂；
41灯板；42LED灯。
 本发明的实施方式
以下参考说明书附图介绍本揭示的优选实施例，用以举例证明本揭示可以实施，这些实施例可以向本领域中的技术人员完整介绍本揭示的技术内容，使得本揭示的技术内容更加清楚和便于理解。然而本揭示可以通过许多不同形式的实施例来得以体现，本揭示的保护范围并非仅限于文中提到的实施例。
实施例1
如图1~2所示，本实施例提供一种背光模组，所述背光模组为直下式背光模组，包括框体1、热电器件组2、第一热传导层3以及灯板4。
框体1的材质为铝板，起到支撑作用。
热电器件组2设于框体1内侧底面。热电器件组2包括柔性基板21以及热电薄膜层22。具体地，柔性基板21设于框体1内侧底面，柔性基板2优选为PI基板。热电薄膜层22贴附于柔性基板21上表面，其厚度为0.25mm~5mm。
如图3所示，热电器件组2包括至少两组相对设置的热电器件20。热电器件20为热电薄膜器件，与热电块体器件相比，其体积更小，结构更灵活，节省空间。两组热电器件20的电流方向相反，第一组热电器件20的电流I1方向为顺时针方向，另一组热电器件20的电流I2方向为逆时针方向。每一热电器件20的热端设于框体1的边缘处，其冷端设于框体1的中心处。需要说明的是，本实施例中的热电薄膜层22为两组相对设置的热电器件20。
每一热电器件20包括两条热电臂201及电极202，热电臂201呈条状，每一热电臂201通过电极202并联连接至另一热电臂201，热电臂201可分为P型热电臂和N型热电臂，热电臂的条数可根据框体的尺寸决定。
如图4所示，热电器件20包括第一热电臂2011、第二热电臂2012及电极202。第一热电臂2011为p型热电臂，第二热电臂2012为n型热电臂，第一热电臂2011与第二热电臂2012之间通过电极202电连接，电极202的一端连接至第一热电臂2011，其另一端连接至第二热电臂2012。
热电器件组2的工作原理为：当热电器件的两端存在温差时，由于塞贝克效应（Seebeck effect）又称作第一热电效应，器件中n型热电臂材料中的载流子(电子)和p型热电臂材料中的载流子(空穴)，从温度高的一端向温度低的一端定向迁移，回路中形成定向电流，这即是热电发电最基本的原理。当对热电器件通入电流时，由于珀耳帖效应（Peltier effect），n型热电臂材料中的载流子(电子)和p型热电臂材料中的载流子(空穴)在外加电场的作用下，将从两种热电臂的下一端分别向上一端定向迁移，同时会携带热电臂下端热量，并将热量输入到器件的上端，这即是热电制冷最基本的原理。
热电器件是一种可以实现电能与热能相互转化的功能性器件，热电器件实现温差发电与电制冷分别基于材料的Seebeck效应与Peltier效应。热电器件没有比较复杂的机械传动结构，无需传统制冷装置所必需的制冷剂，并且器件的响应速度快，工作过程安静无噪音，温度控制精确，对环境友好，使用寿命长。
第一热传导层3设于热电器件组2的上表面，参见图1~2。第一热传导层3的材质为导热硅脂、氧化铝导热橡胶、氮化硼导热橡胶中的至少一种，用以传导热量，具有高效的散热效率。
灯板4设于第一热传导层3上表面。灯板4包括板体41和LED灯42，LED灯42设于板体41上表面，且电连接至热电器件20。
本实施例提供一种背光模组，通过在热电器件组与LED灯板之间衔接处设置第一热传导层，进一步提高散热效率，改善散热效果。
如图5所示，本实施例还提供一种背光模组的制备方法，包括如下步骤S11）~S14）。
S11）热电薄膜层制备步骤，采用真空蒸镀或磁控溅射或丝网印刷的方式，将热电材料制备在一柔性基板上形成热电薄膜层，所述热电薄膜层被封装处理、组装后形成所述热电器件组。
S12）热电器件组安装步骤，在一框体1内侧底面安装两组热电器件20，形成热电器件组2，参见图1。
S13）第一热传导层制备步骤，在所述热电器件组的上表面涂布热电传导材料，形成第一热传导层。所述热电传导材料为导热硅脂、氧化铝导热橡胶、氮化硼导热橡胶中的至少一种。
S14）灯板安装步骤，在热电器件组2上方安装灯板4，灯板4下表面连接至第一热传导层3，参见图1。所述第一热传导层将所述灯板的热量传导至所述热电器件组，实现灯板的高效散热。
本实施例提供一种背光模组的制备方法，通过在热电器件组与LED灯板之间衔接处设置第一热传导层，进一步提高散热效率，改善散热效果。
实施例2
本实施例提供一种背光模组及其制备方法，包括实施例1的大部分技术特征，其区别在于，所述背光模组还包括第二热传导层。
如图6~7所示，本实施例提供一种背光模组，包括框体1、热电器件组2、第一热传导层3、灯板4以及第二热传导层5。
第二热传导层5设于框体1内侧底面，且连接至热电器件组2的一侧边缘处。具体地，第二热传导层5一侧面连接至框体1的内侧壁，另一侧面连接至热电器件组2。第二热传导层5的材质为导热硅脂、氧化铝导热橡胶、氮化硼导热橡胶中的至少一种。第二热传导层5可以加快灯板的散热效果，进一步提高散热效率，改善散热效果。
如图8所示，本实施例还提供一种背光模组的制备方法，包括如下步骤S21）~S25）。
S21）热电薄膜层制备步骤，采用真空蒸镀或磁控溅射或丝网印刷的方式，将热电材料制备在一柔性基板上形成热电薄膜层，所述热电薄膜层被封装处理、组装后形成所述热电器件组。
S22）热电器件组安装步骤，在一框体1内侧底面安装两组热电器件20，形成热电器件组2，参见图6。
S23）第一热传导层制备步骤，在所述热电器件组的上表面涂布热电传导材料，形成第一热传导层。所述热电传导材料为导热硅脂、氧化铝导热橡胶、氮化硼导热橡胶中的至少一种。
S24）灯板安装步骤，在热电器件组2上方安装灯板4，灯板4下表面连接至第一热传导层3，参见图6。所述第一热传导层将所述灯板的热量传导至所述热电器件组，实现灯板的高效散热。
S25）第二热传导层制备步骤，在框体1内侧底面涂布热电传导材料，形成第二热传导层5，参见图6。所述热电传导材料为导热硅脂、氧化铝导热橡胶、氮化硼导热橡胶中的至少一种。所述第二热传导层可以加快灯板的散热效果，进一步提高散热效率，改善散热效果。
本实施例提供一种背光模组及其制备方法，通过在热电器件组与LED灯板之间衔接处设置第一热传导层，以及在热电器件组与框体的内侧壁之间设置第二热传导层，可以加快灯板的散热效果，进一步提高散热效率，改善散热效果。
实施例3
本实施例提供一种背光模组及其制备方法，包括实施例1的大部分技术特征，其区别在于，所述背光模组还包括相变蓄热层以及储能器件。
如图9~10所示，本实施例提供一种背光模组，所述背光模组为直下式背光模组，包括框体1、热电器件组2、第一热传导层3、灯板4、相变蓄热层6以及储能器件7。
相变蓄热层6设于框体1内侧底面，其一侧面连接至框体1的内侧壁，另一侧面连接至热电器件组2，参见图9~10。相变蓄热层6的材质包括结晶水合盐、熔融盐、金属或合金、石蜡、脂肪酸中的至少一种。第二热传导层5的高度小于或等于相变蓄热层6的高度。由于热电薄膜层22较薄导致其蓄热效果较差，因而通过增加相变蓄热层6的厚度增强蓄热效果。
储能器件7的一端电连接至热电器件组2，另一端电连接至驱动电路，该驱动电路为TFT驱动电路。
在工作中，LED灯41通过第一热传导层3将热量更高效地传导至热电器件组2，热电器件组2将热量从热电臂201的中心向两端输运。此时，热量集中在所述背光模组的两侧框体1处，从而实现对所述背光模组的散热效果。在框体1两侧设置相变蓄热层6，将集中在所述背光模组的两侧框体1处的热量进行热量回收处理。具体地，热电器件组2将热量传导至相变蓄热层6。相变蓄热层6的材料受热后发生固-固相变或者固-液相变将热量储存起来，同时带走热电器件组2热端的热量，从而使得热电器件组2源源不断地将LED灯41的热量输运至相变蓄热层6。当显示装置关闭时，LED灯41被熄灭，相变蓄热层6发生固-固相变或者液-固相变，从而释放热量。此时，热电器件组2的两端产生温差，热电器件20由于Seebeck效应产生电流，其输出电能将储存在储能器件7中，储能器件7连接TFT驱动电路，当显示装置工作时可用于电路驱动。与现有技术相比，本实施例提供的背光模组采用具有优异主动散热性能与热量转化电能功能的热电器件，通过将热电器件组与相变蓄热层配合使用，实现对背光模组中LED光源的精确控温与热量回收利用，实现了能源的循环利用，降低了能耗，高效提高了能源利用率。
如图11所示，本实施例还提供一种背光模组的制备方法，包括如下步骤S31）~S36）。
S31）热电薄膜层制备步骤，采用真空蒸镀或磁控溅射或丝网印刷的方式，将热电材料制备在一柔性基板上形成热电薄膜层，所述热电薄膜层被封装处理、组装后形成所述热电器件组。
S32）热电器件组安装步骤，在一框体1内侧底面安装两组热电器件20，形成热电器件组2，参见图9。
S33）第一热传导层制备步骤，在所述热电器件组的上表面涂布热电传导材料，形成第一热传导层。所述热电传导材料为导热硅脂、氧化铝导热橡胶、氮化硼导热橡胶中的至少一种，用以传导热量，具有高效的散热效率。
S34）灯板安装步骤，在热电器件组2上方安装灯板4，灯板4下表面连接至第一热传导层3，参见图9。
S35）相变蓄热层制备步骤，在框体1内侧底面制备相变蓄热层6，相变蓄热层6一侧面连接至框体1的内侧壁，另一侧面连接至第二热传导层5，参见图9。相变蓄热层6的材质包括结晶水合盐、熔融盐、金属或合金、石蜡、脂肪酸中的至少一种。第二热传导层5的高度小于或等于相变蓄热层6的高度。由于热电薄膜层22较薄导致其蓄热效果较差，因而通过增加相变蓄热层6的厚度增强蓄热效果。
S36）储能器件安装步骤，在框体1内安装一储能器件7，储能器件7的一端电连接至热电器件组2，另一端电连接至驱动电路，参见图10。储能器件7一方面可以实现热电器件组2的热量回收，另一方面可以为驱动电路提供电流。
本实施例提供一种背光模组及其制备方法，通过在热电器件组与LED灯板之间衔接处设置第一热传导层，进一步提高散热效率，改善散热效果。进一步地，本揭示在框体与框体内的热电器件组之间设置相变蓄热层，将热电器件组的热量传递到相变蓄热层，从而实现对灯板热量的回收利用。
实施例4
本实施例提供一种背光模组及其制备方法，包括实施例3的大部分技术特征，还包括第二热传导层。
如图12~13所示，本实施例提供一种背光模组，所述背光模组为直下式背光模组，包括框体1、热电器件组2、第一热传导层3、灯板4、第二热传导层5、相变蓄热层6以及储能器件7。
第二热传导层5设于框体1内侧底面，且连接至热电器件组2的一侧边缘处。第二热传导层5的材质为导热硅脂、氧化铝导热橡胶、氮化硼导热橡胶中的至少一种。
相变蓄热层6设于框体1内侧底面，一侧面连接至框体1的内侧壁，另一侧面连接至第二热传导层5；储能器件7的一端电连接至热电器件组2；其另一端电连接至驱动电路。
LED灯41通过第一热传导层3将热量更高效地传导至热电器件组2，热电器件组2将热量从热电臂201的中心向两端输运。此时，热量集中在所述背光模组的两侧框体1处，从而实现对所述背光模组的散热效果。在框体1两侧设置相变蓄热层6，将集中在所述背光模组的两侧框体1处的热量进行热量回收处理。具体地，热电器件组2通过第二热传导层5将热量更高效地传导至相变蓄热层6。相变蓄热层6的材料受热后发生固-固相变或者固-液相变将热量储存起来，同时带走热电器件组2热端的热量，从而使得热电器件组2源源不断地将LED灯41的热量输运至相变蓄热层6。当显示装置关闭时，LED灯41被熄灭，相变蓄热层6发生固-固相变或者液-固相变，从而释放热量。此时，热电器件组2的两端产生温差，热电器件20由于Seebeck效应产生电流，其输出电能将储存在储能器件7中，储能器件7连接TFT驱动电路，当显示装置工作时可用于电路驱动。与现有技术相比，本实施例提供的背光模组采用具有优异主动散热性能与热量转化电能功能的热电器件，通过与相变蓄热层配合使用，实现对背光模组中LED光源的精确控温与热量回收利用，实现了能源的循环利用，降低了能耗，高效提高了能源利用率。
如图14所示，本实施例还提供一种背光模组的制备方法，包括如下步骤S41）~S47）。
S41）热电薄膜层制备步骤，采用真空蒸镀或磁控溅射或丝网印刷的方式，将热电材料制备在一柔性基板上形成热电薄膜层，所述热电薄膜层被封装处理、组装后形成所述热电器件组。
S42）热电器件组安装步骤，在一框体1内侧底面安装两组热电器件20，形成热电器件组2，参见图12。
S43）第一热传导层制备步骤，在所述热电器件组的上表面涂布热电传导材料，形成第一热传导层。所述热电传导材料为导热硅脂、氧化铝导热橡胶、氮化硼导热橡胶中的至少一种，用以传导热量，具有高效的散热效率。
S44）灯板安装步骤，在热电器件组2上方安装灯板4，灯板4下表面连接至第一热传导层3，参见图12。
S45）第二热传导层制备步骤，在框体1内侧底面涂布热电传导材料，形成第二热传导层5，参见图1。所述热电传导材料为导热硅脂、氧化铝导热橡胶、氮化硼导热橡胶中的至少一种，用以传导热量，具有高效的散热效率。
S46）相变蓄热层制备步骤，在框体1内侧底面制备相变蓄热层6，相变蓄热层6一侧面连接至框体1的内侧壁，另一侧面连接至第二热传导层5，参见图12。相变蓄热层6的材质包括结晶水合盐、熔融盐、金属或合金、石蜡、脂肪酸中的至少一种。第二热传导层5的高度小于或等于相变蓄热层6的高度。由于热电薄膜层22较薄导致其蓄热效果较差，因而通过增加相变蓄热层6的厚度增强蓄热效果。
S47）储能器件安装步骤，在框体1内安装一储能器件7，储能器件7的一端电连接至热电器件组2，另一端电连接至驱动电路，参见图13。储能器件7一方面可以实现热电器件组2的热量回收，另一方面可以为驱动电路提供电流。
与现有技术相比，本实施例提供的背光模组采用具有优异主动散热性能与热量转化电能功能的热电器件，通过与相变蓄热层配合使用，实现对背光模组中LED光源的精确控温与热量回收利用，实现了能源的循环利用，降低了能耗，高效提高了能源利用率。
本揭示的技术效果在于，提供一种背光模组及其制备方法，通过在热电器件组与LED灯板之间衔接处设置热第一传导层，进一步提高散热效率，改善散热效果。进一步地，本揭示在框体与框体内的热电器件组之间设置第二热传导层及相变蓄热层，将热电器件组的热量传递到相变蓄热层，从而实现对灯板热量的回收利用。
以上所述仅是本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员，在不脱离本发明原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本发明的保护范围。

Claims (10)

  1. 一种背光模组，其中包括
    框体；
    热电器件组，设于所述框体内侧底面；
    第一热传导层，设于所述热电器件组远离所述框体一侧的表面；以及
    灯板，设于所述第一热传导层远离所述框体一侧的表面。
  2. 如权利要求1所述的背光模组，其中，还包括
    相变蓄热层，设于所述框体内侧底面，一侧面连接至所述框体的内侧壁；以及
    储能器件，其一端电连接至所述热电器件组，另一端电连接至驱动电路。
  3. 如权利要求1所述的背光模组，其中，还包括
    第二热传导层，设于所述框体内侧底面，且连接至所述热电器件组的一侧边缘处。
  4. 如权利要求3所述的背光模组，其中，还包括
    相变蓄热层，设于所述框体内侧底面，一侧面连接至所述框体的内侧壁，另一侧面连接至所述第二热传导层；以及
    储能器件，其一端电连接至所述热电器件组，另一端电连接至驱动电路。
  5. 如权利要求4所述的背光模组，其中，
    所述第二热传导层的高度小于或等于所述相变蓄热层的高度。
  6. 如权利要求1所述的背光模组，其中，
    相变蓄热层的材质包括结晶水合盐、熔融盐、金属或合金、石蜡、脂肪酸中的至少一种；和/或，
    所述第一热传导层的材质为导热硅脂、氧化铝导热橡胶、氮化硼导热橡胶中的至少一种；和/或，
    第二热传导层的材质为导热硅脂、氧化铝导热橡胶、氮化硼导热橡胶中的至少一种。
  7. 一种背光模组的制备方法，其中，包括如下步骤：
    热电器件组安装步骤，在一框体内侧底面安装两组热电器件，形成热电器件组；
    第一热传导层制备步骤，在所述热电器件组的上表面涂布热电传导材料，形成第一热传导层；
    灯板安装步骤，在所述热电器件组上方安装灯板，所述灯板下表面连接至所述第一热传导层。
  8. 如权利要求7所述的背光模组的制备方法，其中，在灯板安装步骤之后，还包括
    相变蓄热层制备步骤，在所述框体内侧底面制备相变蓄热层，所述相变蓄热层一侧面连接至所述框体的内侧壁；以及
    储能器件安装步骤，在所述框体内安装一储能器件，所述储能器件的一端电连接至所述热电器件组，另一端电连接至驱动电路。
  9. 如权利要求7所述的背光模组的制备方法，其中，在灯板安装步骤之后，还包括
    第二热传导层制备步骤，在所述框体内侧底面涂布热电传导材料，形成第二热传导层。
  10. 如权利要求9所述的背光模组的制备方法，其中，在第二热传导层制备步骤之后，还包括
    相变蓄热层制备步骤，在所述框体内侧底面制备相变蓄热层，所述相变蓄热层一侧面连接至所述框体的内侧壁，另一侧面连接至所述第二热传导层；以及
    储能器件安装步骤，在所述框体内安装一储能器件，所述储能器件的一端电连接至所述热电器件组，另一端电连接至驱动电路。
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