TWI364856B - Light emitting diode device and fabricating method thereof - Google Patents

Description

1364856 Ιύο年. September 2'7, according to the replacement page. 6. Description of the invention: [Technical Field of the Invention] [0001] The present invention relates to a light-emitting diode device and a process thereof. [Prior Art]

[0002] Light Emitting Diodes (LEDs) have been widely used in display devices and optical read/write devices because of their small size, fast response, high brightness, long life, and stable light emission. When the light-emitting diode is operated, about 20% of its energy is derived as light energy, and 80% is derived as heat energy. This thermal energy will cause the temperature of the light-emitting diode to rise, affecting the luminous efficiency and reducing the life of the component. [0003] The conventional solution uses a heat sink, a thermo cooler (TE cooler) or a combination of the two, and is assembled with the light emitting diode by bonding or soldering, and the light emitting diode is Cooling heat. The cooling chip has the advantages of fast cooling speed, small volume, no pollution, high temperature control accuracy, etc., and gradually replaces other heat-dissipating components, and is more widely used for cooling and cooling of light-emitting diodes.

[0004] The refrigerated wafer includes a first substrate and a second substrate disposed opposite the first substrate. The LED is bonded to the first substrate of the refrigerating wafer by an adhesive material. The heat sink is also bonded and fixed to the second substrate of the refrigerant chip by an adhesive material. [0005] When a predetermined current is applied, the light emitting diode emits light and generates heat, which is absorbed by the cold film and transmitted to the heat sink, and then released by the heat sink, thereby causing the light emitting diode The temperature of the body is lowered. [0006] However, when the light-emitting diode is in operation, the bond or the weld will affect 097105344 Form No. A0101 Page 3 / Total 17 Page 1003353025-0 1364856 On September 27, 100, the heat transfer efficiency of the lane change page is corrected, and The way of bonding or welding leads to complicated assembly processes and increased manufacturing costs. In addition, the two substrates of the cooled wafer also affect the heat conduction efficiency, thereby causing poor heat dissipation of the light emitting diode. SUMMARY OF THE INVENTION [0007] In view of the above, it is necessary to provide a light-emitting diode device having a better heat dissipation effect and a lower cost. - [0008] In view of the above, it is also necessary to provide a process for the above-described light-emitting diode device. [0009] A light emitting diode device comprising a light emitting diode epitaxial wafer and a #冷冷 wafer. The LED epitaxial wafer includes a substrate and a semiconductor layer disposed on a surface of the substrate. The cooled wafer is formed directly on the surface of the substrate away from the semiconductor layer.

[0010] A light emitting diode device comprising a light emitting diode epitaxial wafer and a cooled wafer, the light emitting diode epitaxial wafer comprising a substrate and a semiconductor layer disposed on the surface of the substrate. The cold end of the cooled wafer directly absorbs the heat generated by the light emitting diode and is conducted to the hot end. [0011] A process for a light-emitting diode device, comprising the steps of: providing a substrate, forming a semiconductor layer on the substrate; directly forming a cooling chip on the surface of the substrate away from the semiconductor layer; providing a heat sink, And bonding and fixing with the cooling chip. [0012] Compared with the prior art, the cold-formed wafer of the light-emitting diode device of the present invention is directly formed on the surface of the substrate of the light-emitting diode epitaxial wafer, and the two substrates of the cooled wafer are omitted, so that the heat dissipation can be greatly improved. Efficiency while saving manufacturing and assembly costs. The process of the light-emitting diode device will be 097105344 Form No. A0101 Page 4 of 17 1003353025-0 1364856

Correction of the replacement page cold wafer on the 100th and the 09th of the first day, the surface of the substrate of the light-emitting diode chip is directly formed on the surface of the substrate of the light-emitting diode wafer* without being bonded or soldered to the light-emitting diode wafer, thereby greatly enhancing the light-emitting diode The heat dissipation efficiency of the polar body device. [Embodiment] [0013] Referring to Figure 1, there is shown a side view of a first embodiment of a light-emitting diode device of the present invention. The light emitting diode device 2 includes a light emitting diode epitaxial wafer 21, a uniform cold wafer 22, and a heat sink 23. The cooled wafer 22 is directly formed on the surface of the light emitting diode epitaxial wafer 21. The heat sink 23 is disposed on a surface of the refrigerant chip 22 away from the light emitting diode epitaxial wafer 21. [0014] The LED epitaxial wafer 21 includes a substrate 211 and a semiconductor layer 212. The semiconductor layer 212 is disposed on a surface of the substrate 211. The substrate 211 is an insulating substrate made of sapphire or Si Xi. [0015] The refrigerated wafer 22 includes a plurality of first electrodes 223a, an insulating layer (not shown), a plurality of second electrodes 223b, a plurality of P-type semiconductor dies 224, and a plurality of N-type semiconductor dies 225. The first electrode 223a is disposed on a surface of the substrate 211 away from the semiconductor layer 212. The insulating layer is disposed on a surface of the heat sink 23 adjacent to the chilled wafer 22. The second electrode 223b is disposed on the surface of the insulating layer and arranged in a staggered manner with the first electrode 223a. Each of the P-type semiconductor dies 224 and the N-type semiconductor dies 225 are alternately spaced apart from each other and sandwiched between the first electrode 223a and the second electrode 223b. [0016] One end of each of the P-type semiconductor die 224 and the N-type semiconductor die 225 adjacent to the LED epitaxial wafer 21 is defined as a cold end, and each of the P-type semiconductor die 224 and the N-type semiconductor crystal The granule 225 is close to one of the heat sinks 23 097105344 Form No. A0101 Page 5 of 17 1003353025-0 1364856

1100.09 B

The end is defined as the hot end. Each of the P-type semiconductor dies 224 is disposed between the NAND semiconductor dies 225, and the cold ends of the P-type/semiconductor dies 224 and the N-type semiconductor dies 225 are electrically connected by a first electrode 223a. connection. The P-type semiconductor die 224 and the other end of the other N-type semiconductor die 225 are electrically connected by a second electrode 223b, so that the P-type semiconductor die 224 and the plurality of N-type semiconductor die 225 are electrically connected to each other. Sexually connected in series. When the light-emitting diode device 2 is applied with a predetermined current, the cold end of the refrigerant chip 22 absorbs the heat generated by the light-emitting diode epitaxial wafer 21 and transfers the heat to the hot end. The heat is released at the hot end by the heat sink 23, so that the temperature of the light-emitting diode epitaxial wafer 21 is lowered. [FIG. 2] Referring to FIG. 2, a process diagram of the LED device 2 shown in FIG. 1 includes the following steps: [0018] Step S1: providing a substrate, forming a semiconductor layer on the surface of the substrate; 0019] Referring to FIG. 3 together, a substrate 211 is provided. The substrate 211 is an insulating substrate made of sapphire or germanium. A semiconductor layer 212 is formed on the surface of the substrate 211 by epitaxial technique. [0020] Step S2: directly forming a cooling wafer on the surface of the substrate 211 away from the semiconductor layer 212. [0021] Referring to FIG. 4 together, a surface of the substrate 211 is formed away from the surface of the semiconductor layer 212 to form a plurality of first Electrode 223a. The plurality of first electrodes 223a are arranged in an interval. [0022] A P-type semiconductor die 224 and an N-type semiconductor die 225 are formed on each of the first electrodes 223a by electroforming. The P-type semiconductor die 224 and the N-type semiconductor die 225 are adjacent to one of the substrates 211. Form No. A0101 Page 6 of 17 1003353025-0 [0023] [0023] 1364856

The white-correcting replacement page ～I is electrically connected to the substrate 211, the plurality of first electrodes 223a, the plurality of P-type semiconductor dies 224, and the plurality of N-type semiconductor dies 225 by a first photoresist 223a. A layer (not shown) provides a mask to expose and develop the photoresist layer to form a predetermined photoresist pattern. A plurality of conductive metal layers are deposited on the p-type semiconductor crystal grains 224, the plurality of N-type semiconductor crystal grains 225, and the remaining first resistors, and the remaining photo-semiconductor and the conductive metal layer thereon are etched to form a plurality of second electrodes 223b. The second electrode 223b is arranged in a staggered manner with the first electrode 223a. The second electrode 223b and the first electrode 223a are electrically connected to the two ends of the semiconductor die 224, 225, respectively, so that the semiconductor die 224, 225 are electrically connected in series with each other. An insulating layer (not shown) is deposited on the surface of the second electrode 223b. [0024] Step S3: providing a heat sink and bonding and fixing the cooled wafer 22. [0025] Please refer to FIG. 5' to provide a heat sink 23, which is bonded and fixed to the insulating layer. Thereby, the hot end of the cooled wafer 22 is connected to the heat sink 23. The heat emitted by the light-emitting diode epitaxial wafer 21 is released by the heat sink 23 at the hot end. [0026] Compared with the prior art, the cold-formed wafer 22 of the light-emitting diode device 2 of the present invention is directly formed on the surface of the substrate 211 of the light-emitting diode epitaxial wafer 21 by electroforming technology, without bonding materials or The soldering assembly method also eliminates the two substrates of the cooled wafer 22, which not only greatly improves the heat dissipation efficiency, but also reduces the manufacturing and assembly costs. Referring to Fig. 6, a side view of a second embodiment of a light emitting diode device of the present invention is shown. The light-emitting diode device 3 is substantially the same as the first embodiment of the hair 1003353025-0 097105344 form number A0101 page 7 / 17 page 1364856 100 September 2 / day nuclear positive arm one-page photodiode device 2, The main difference is that the LED device 3 includes a first electrode 323a and a second electrode 323b. The first electrode 323a is disposed on a surface of the substrate 311 away from the semiconductor layer (not labeled). The second electrode 323b is disposed on a surface of the heat sink (not shown). The plurality of semiconductor dies 324 are spaced apart and sandwiched between the first electrode 323a and the first electrode 323b. The semiconductor die 324 are of the same type of semiconductor die, such as a P-type semiconductor die or an N-type semiconductor die. The semiconductor die 324 is electrically connected in parallel by the first electrode 323a and the second electrode 323b. The process of the light-emitting diode device 3 is substantially the same as that of the light-emitting diode device 2 of the first embodiment. The main difference is that a first electrode 323a is deposited on the surface of the substrate 311 away from the semiconductor layer. A plurality of semiconductor dies 324 having the same interval and the same type are formed on the first electrode 323a. Further, a second electrode 323b is deposited on the semiconductor dies 324, so that the plurality of semiconductor dies 324 are electrically connected in parallel. Referring to FIG. 7, a side view of a third embodiment of a light-emitting diode device of the present invention is shown. The light emitting diode device 4 is substantially the same as the light emitting diode device 2 of the first embodiment, and the main difference is that the substrate 411 of the light emitting diode epitaxial wafer 41 of the light emitting diode device 4 is a conductive substrate. The material is made of tantalum carbide (SiC). The light-emitting diode device 4 further includes an insulating layer 41 6 disposed on the surface of the substrate 411 and a first electrode 423a disposed at a plurality of intervals on the surface of the insulating layer 416. Each of the P-type semiconductor crystal grains 4 24 and the N-type semiconductor crystal grains are alternately disposed ′ and sandwiched between the first electrode 423a and the second electrode 423b, and are electrically connected in series. The process of the light-emitting diode device 4 is substantially the same as that of the light-emitting diode device 2 of the first embodiment, and the main difference is that a substrate 097105344 is provided. The number is A0101, page 8 / page 17 1003353025- 0 1364856

On the 27th and the 27th of September, the substrate 411 is a conductive substrate. An insulating layer 416 is formed on the surface of the substrate 411, and a plurality of first electrodes 423a arranged at intervals are formed in the insulating layer 416. Referring to FIG. 8, a side view of a fourth embodiment of a light-emitting diode device of the present invention is shown. The light-emitting diode device 5 is substantially the same as the light-emitting diode device 3 of the second embodiment, and the main difference is that the substrate 511 of the light-emitting diode epitaxial wafer (not labeled) of the light-emitting diode device 5 is electrically conductive. The substrate is made of tantalum carbide. The surface of the substrate 511 is provided with a plurality of semiconductor dies 524 arranged at different intervals and of the same type. The process of the light-emitting diode device 5 is substantially the same as that of the light-emitting diode device 3 of the second embodiment. The main difference is that the semiconductor die 524 is directly formed on the surface of the substrate 511. Referring to FIG. 9, a bottom view of a fifth embodiment of a light-emitting diode device of the present invention is shown. The light emitting diode device 6 is substantially the same as the light emitting diode device 5 of the fourth embodiment, and the main difference is that the light emitting diode device 6 includes an insulating layer 616 disposed on a surface of a substrate (not shown) and • A rectangular conductive block 617. The rectangular conductive block 617 is located at a central position of the substrate and includes four sides (not shown) perpendicular to the substrate. The insulating layer 616 covers a peripheral region of the rectangular conductive block 617 of the substrate. The surface of the insulating layer 61 6 is provided with a plurality of semiconductor dies 624 arranged at different intervals and of the same type. One end of the semiconductor die 624 is connected to the four sides, and the rectangular conductive block 617 is electrically connected, and the end is defined as a cold end. The other end is electrically connected by an electrode 623, and the end is defined as a hot end. The heat sink (not shown) is coupled to the hot end. The process of the light-emitting diode device 6 is substantially the same as that of the light-emitting diode device 5 of the fourth embodiment, and its main area 097105344 Form No. A0101 Page 9 / Total 17 Page 1003353025-0 1364856 100 years. September 27 The Japanese shuttle is formed by: forming a rectangular conductive block 617 at the center of the surface of the substrate and depositing an insulating layer 616 on the surface of the substrate and the rectangular conductive block 617, and forming a plurality of semiconductor crystals arranged at intervals on the surface of the insulating layer 61 6 A particle 6 2 4 and one end of the semiconductor die 6 24 is connected to the four sides. An electrode 623 is deposited on the other end of the semiconductor wafer 624 such that the semiconductor die 624 are electrically connected in parallel. [0031] In summary, the present invention has indeed met the requirements of the invention patent, and the patent application is filed according to law. However, the above description is only a preferred embodiment of the present invention, and the scope of the present invention is not limited to the above-described embodiments, and those skilled in the art will be able to make equivalent modifications or variations in accordance with the spirit of the present invention. All should be covered by the following patent application. BRIEF DESCRIPTION OF THE DRAWINGS [0032] Fig. 1 is a schematic view showing the side structure of a first embodiment of a light-emitting diode device of the present invention. 2 is a flow chart of the process of the LED device of FIG. 1. 3 to FIG. 5 are schematic diagrams showing the structure of each process step of the light-emitting diode device shown in FIG. 2. 6 is a schematic side view showing a second embodiment of the light-emitting diode device of the present invention. 7 is a schematic view showing a side structure of a third embodiment of the light-emitting diode device of the present invention. 8 is a schematic view showing the side structure of a fourth embodiment of the light-emitting diode device of the present invention. 097105344· Form No. 1010101 Page 10/Total 17 Page 1003353025-0 1364-856 [0038] September 27, 100, the shuttle replacement page FIG. 9 is a schematic diagram of the bottom structure of the fifth embodiment of the light-emitting diode device of the present invention. . [Description of Main Component Symbols] [0040] Light-emitting diode device 2, 3, 4, 5, 6 substrate 11, 311, 411, 511 light-emitting diode epitaxial wafer 21, 41 cold-rolled wafer 22 heat sink 23 [0040] Semiconductor layer 212, 412

First electrodes 223a, 323a, 423a second electrodes 223b, 323b, 423b [0042] P-type semiconductor dies 224, 424 [0043] N-type semiconductor dies 225, 425 [0044] Semiconductor dies 324, 524 624 [0045] insulating layer 416, 616 [0046] rectangular conductive block 617 electrode 623

1003353025-0 097105344 Form No. A0101 Page 11 of 17

Claims (1)

1364856 100: Year. September 2'7, the shuttle is replacing page 7. Patent application scope: 1. A light-emitting diode device, comprising: a light-emitting diode epitaxial wafer, comprising a substrate and a device disposed thereon a semiconductor layer on the surface of the substrate; and a uniform cold wafer directly formed on the surface of the substrate away from the semiconductor layer, the cooling wafer including an electrode disposed on a side of the substrate away from the semiconductor layer and disposed on the electrode A plurality of semiconductor dies of the same type, the semiconductor dies being P-type semiconductor dies or N-type semiconductor dies. 2. The light-emitting diode device according to claim 1, wherein the substrate is an insulating substrate. 3. The light emitting diode device of claim 2, wherein the electrode comprises a first electrode and a second electrode disposed opposite to the first electrode, the first electrode being disposed on the substrate away from the semiconductor The surface of the layer is sandwiched between the first electrode and the second electrode. 4. The light-emitting diode device according to claim 1, wherein the substrate is a conductive substrate. 5. The illuminating diode device of claim 4, wherein the chilled wafer further comprises a rectangular conductive block and an insulating layer, the rectangular conductive block being disposed at a central position of the substrate surface, the rectangular conductive The block includes a fourth side perpendicular to the substrate, the insulating layer is disposed on a peripheral region of the rectangular conductive block of the substrate, the semiconductor die is disposed on the surface of the insulating layer, and one end is connected to the four sides, and the electrode is disposed on the semiconductor The die is away from one end of the rectangular conductive block. 6. The light emitting diode device of claim 1, further comprising a heat sink, the heat sink being bonded to the cold wafer. 097105344 Form No. A0101 Page 12 of 17 1003353025-0 rI364_856 September 27, 2007 Shuttle replacement page 7. The process of a light-emitting diode device, comprising the following steps: 51. Providing a substrate, Forming a semiconductor layer on the surface of the substrate; 52. Forming an electrode on a side of the substrate away from the semiconductor layer, and forming a plurality of semiconductor dies of the same type arranged at intervals on the electrode, the semiconductor dies being P-type semiconductor dies or N-type a semiconductor die; and 53. A heat sink is provided and bonded to the refrigerant die. 8. The process of the light-emitting diode device according to claim 7, wherein the substrate is an insulating substrate. 9. The process of the illuminating diode device of claim 8, wherein the electrode comprises a first electrode and a second electrode, and the step S2 further comprises forming the first surface of the substrate away from the surface of the semiconductor layer. And forming an electrode of the plurality of semiconductor grains on the surface of the first electrode, and forming the second electrode on a surface of the semiconductor die away from the semiconductor layer. 10. The process of the light-emitting diode device of claim 7, wherein the substrate is a conductive substrate. The process of the light-emitting diode device of claim 10, wherein the step S2 further comprises sequentially forming a conductive block and an insulating layer on the surface of the substrate away from the semiconductor layer, the conductive block being disposed. At the center of the surface of the conductive substrate, the conductive block includes four sides perpendicular to the substrate, the semiconductor die is disposed on the surface of the insulating layer, and one end is connected to the four sides, and the electrode is disposed on the semiconductor die away from the rectangular conductive One end of the block. 097105344 Form No. A0101 Page 13 of 17 1003353025-0