CN100524864C - LED encapsulation structure and its making method - Google Patents
LED encapsulation structure and its making method Download PDFInfo
- Publication number
- CN100524864C CN100524864C CN 200710085667 CN200710085667A CN100524864C CN 100524864 C CN100524864 C CN 100524864C CN 200710085667 CN200710085667 CN 200710085667 CN 200710085667 A CN200710085667 A CN 200710085667A CN 100524864 C CN100524864 C CN 100524864C
- Authority
- CN
- China
- Prior art keywords
- led
- base plate
- those
- package structure
- circuit base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
Landscapes
- Led Device Packages (AREA)
Abstract
An encapsulating structure for light emitting diode comprises a first baseplate, one or more light emitting diode chips, a second baseplate and a thermoelectric refrigerator element. The first baseplate is provided with a first surface and a corresponding second surface thereof. The light emitting diode chip can emit light, is equipped on the first surface of the first baseplate, and electrically connected with the first baseplate. The second baseplate is positioned under the first baseplate, the second baseplate is provided with a third surface and a corresponding forth surface thereof, and the third surface is opposite to the second surface. The thermoelectric refrigerator element is equipped between the second surface of the first baseplate and the third surface of the second baseplate to conduct the thermal energy generated by light emitting diode chips in operation.
Description
Technical field
The present invention relates to a kind of package structure for LED and preparation method thereof, and particularly relate to a kind of package structure for LED that thermoelectric cooling element and light-emitting diode (LED) module are integrated and preparation method thereof.
Background technology
Light-emitting diode belongs to a kind of semiconductor element, the material of its luminescence chip mainly uses III-V family chemical element, as: gallium phosphide (GaP), GaAs (GaAs), gallium nitride compound semiconductors such as (GaN), its principle of luminosity is to convert electrical energy into light, just compound semiconductor is applied electric current, see through combining of electronics and hole, the energy of surplus is disengaged with the form of light, and reach luminous effect.Because the luminescence phenomenon of light-emitting diode is not by adding thermoluminescence or Discharge illuminating, but it is luminous to belong to cold property, thus the life-span of light-emitting diode reach more than 100,000 hours, and need not warm up the lamp time (idlingtime).In addition, light-emitting diode have reaction speed fast (be about 10-9 second), volume little, power-saving, pollute low (not containing mercury), high-reliability, be fit to advantages such as volume production, therefore its applicable field of institute is very extensive, for example needs the Dashboard illumination, traffic lights of scanner lamp source, Backlight For Liquid Crystal Display Panels or the front light-source automobile of reaction at a high speed and general lighting device etc.
Existing light-emitting diode is a main material with gallium nitride (GaN), and is made by the mode of extension (epitaxy).Wherein, light-emitting diode mainly comprises a substrate (substrate), semi-conductor layer (semi-conductive layer), two external electrodes, and also comprises having two bond courses (confinement layer) that N type and P type mix respectively and be positioned at luminescent layer (active layer) between two bond courses in the semiconductor layer.When external electrode is applied a forward bias voltage drop, the electric current semiconductor layer of can flowing through, and in luminescent layer, produce combining of electronics and hole, and then make luminescent layer luminous.
Light-emitting diode is to belong to a kind of high-power components, and its power of 80% is the pattern output with heat energy, and remaining 20% power is only the pattern output with luminous energy.Therefore, if when not arranging in pairs or groups in the package structure for LED heat abstractor suitable, the heat energy of its generation will cause internal temperature to raise, and then influences the luminous efficiency of light-emitting diode, and shortens its useful life.So the heat radiation of High Power LED is a problem that needs to be resolved hurrily in fact.
In No. 6902291 patent of United States Patent (USP), disclose a kind of " the runway heading led lamp " (In-pavement directional LED luminaire).This fitting structure is at LED support (LED holder) below configuration one thermoelectric cooling module (Thermoelectric Cooler, TE Cooler).This thermoelectric cooling module has a cold junction and a hot junction corresponding with it, the contiguous LED support of the cold junction of thermoelectric cooling module, and its hot junction is covered on a radiator.Thus, can the heat energy that light-emitting diode produced be taken away by the collocation of thermoelectric cooling module and radiator.Yet, between above-mentioned LED support and the thermoelectric cooling module, and utilize adhesive agent that the three is fitted together between thermoelectric cooling module and the radiator, therefore, its assembling process is comparatively complicated, and is heated and during dilatancy when adhesive agent, can have influence between LED support and the thermoelectric cooling module, and the engagement relationship between thermoelectric cooling module and the radiator, and can't reach required radiating effect, and then influence the running of light-emitting diode.
Summary of the invention
The purpose of this invention is to provide a kind of package structure for LED, be suitable for solving the heat dissipation problem that existing light-emitting diode suffers from, and can improve its luminous efficiency and luminous flux.
Another object of the present invention provides a kind of manufacture method of package structure for LED, utilize micro electronmechanical technology that the making of light-emitting diode (LED) module and thermoelectric cooling element is combined, improving the heat-sinking capability of this encapsulating structure, and can reduce the complexity that encapsulation is integrated.
For reaching above-mentioned or other purposes, the present invention proposes a kind of package structure for LED, and it comprises one first substrate, one or more light-emitting diode chip for backlight unit, one second substrate and a thermoelectric cooling element.First substrate has a first surface and a second surface corresponding with it.Light-emitting diode chip for backlight unit can be launched a light, is disposed on the first surface of first substrate, and is electrically connected with first substrate.Second substrate is the below that is positioned at first substrate, and second substrate has one the 3rd surface and one four surface corresponding with it, and the 3rd surface is in the face of second surface.Have a groove on the first surface of first substrate, and light-emitting diode chip for backlight unit is disposed in this groove.Thermoelectric cooling element is to be disposed between the 3rd surface of the second surface of first substrate and second substrate, the heat energy that produces during with the running of conduction light-emitting diode chip for backlight unit.
In one embodiment of this invention, first substrate is a silicon substrate.
In one embodiment of this invention, above-mentioned package structure for LED also comprises a reflectance coating, and this reflectance coating is disposed at the sidewall and the bottom of groove.
In one embodiment of this invention, above-mentioned package structure for LED also comprises a diffuser plate, and this diffuser plate is disposed on the first surface of first substrate, and is positioned at the top of light-emitting diode chip for backlight unit.
In one embodiment of this invention, the material of diffuser plate be polymethyl methacrylate (poly (methyl) methacrylate, PMMA).
In one embodiment of this invention, above-mentioned package structure for LED also comprises one first insulating barrier, and this first insulating barrier is positioned on the first surface of first substrate, and exposes light-emitting diode chip for backlight unit.
In one embodiment of this invention, light-emitting diode chip for backlight unit is electrically connected with first substrate through routing joining technique or flip-chip bond technology.
In one embodiment of this invention, above-mentioned package structure for LED also comprises a packing colloid, and this packing colloid is positioned on the first surface of first substrate, and covering luminousing diode chip.
In one embodiment of this invention, the material of packing colloid is epoxy resin or silica gel.
In one embodiment of this invention, second substrate is a silicon substrate.
In one embodiment of this invention, thermoelectric cooling element comprises one first patterned electrode layer, one second patterned electrode layer, a plurality of N type semiconductor material N type semiconductor material material and a plurality of P type semiconductor material P type semiconductor material material.First patterned electrode layer comprises a plurality of first electrodes, and these first electrodes are disposed on the second surface of first substrate.Second patterned electrode layer comprises a plurality of second electrodes, and these second electrodes are disposed on the 3rd surface of second substrate.And N type semiconductor material material N type semiconductor material and P type semiconductor material material P type semiconductor material are disposed between first electrode and second electrode in staggered mode, and be electrically connected with second electrode with these first electrodes, to form a current circuit.
In one embodiment of this invention, thermoelectric cooling element also comprises a plurality of scolders, these scolders are disposed between the N type semiconductor material and first electrode, between N type semiconductor material and second electrode, between P type semiconductor material and first electrode, and between the P type semiconductor material and second electrode.
In one embodiment of this invention, above-mentioned package structure for LED also comprises one second insulating barrier, and this second insulating barrier is positioned on the second surface of first substrate, and exposes the first above-mentioned electrode.
In one embodiment of this invention, above-mentioned package structure for LED also comprises one the 3rd insulating barrier, and this 3rd insulating barrier is positioned on the 3rd surface of second substrate, and exposes the second above-mentioned electrode.
In one embodiment of this invention, an end of each N type semiconductor material and each P type semiconductor material is imbedded in first substrate.
In one embodiment of this invention, an end of each N type semiconductor material and each P type semiconductor material is imbedded in second substrate.
In one embodiment of this invention, above-mentioned package structure for LED also comprises more than one location division, and these position points and are positioned at the periphery of each N type semiconductor material and each P type semiconductor material between first substrate and second substrate.
In one embodiment of this invention, above-mentioned package structure for LED also comprises a radiator, is disposed on the 4th surface of second substrate.
For reaching above-mentioned or other purposes, the present invention proposes a kind of manufacture method of package structure for LED in addition, it comprises the following steps: at first, one first circuit base plate and one second circuit base plate are provided, first circuit base plate has a first surface and a second surface corresponding with it, and second circuit base plate has one the 3rd surface and one four surface corresponding with it, and has a plurality of electrodes respectively on second surface and the 3rd surface.Afterwards, form a plurality of N type semiconductor materials and a plurality of P type semiconductor material, these N type semiconductor materials and P type semiconductor material are disposed on the above-mentioned electrode in staggered mode.Next, assemble first circuit base plate and second circuit base plate, wherein, above-mentioned N type semiconductor material and P type semiconductor material are between the electrode of first circuit base plate and second circuit base plate, and N type semiconductor material and P type semiconductor material see through these electrodes and be electrically connected with first circuit base plate and second circuit base plate.At last, one or more light-emitting diode chip for backlight unit is disposed on the first surface of first circuit base plate, and it is electrically connected with first circuit base plate.
In one embodiment of this invention, N type semiconductor material and P type semiconductor material are formed at respectively on the electrode of second surface of first circuit base plate.
In one embodiment of this invention, N type semiconductor material and P type semiconductor material are formed at respectively on the electrode on the 3rd surface of second circuit base plate.
In one embodiment of this invention, the N type semiconductor material of part is formed on the electrode of second surface of first circuit base plate with the P type semiconductor material of part, and the P type semiconductor material of the N type semiconductor material of part and part is formed on the electrode on the 3rd surface of second circuit base plate.
In one embodiment of this invention, also comprise a plurality of first location divisions on the second surface of first circuit base plate, and also comprise a plurality of second location divisions corresponding to above-mentioned first location division on the 3rd surface of second circuit base plate, and these first location divisions and second location division are positioned at the periphery of each electrode respectively.
In one embodiment of this invention, N type semiconductor material and P type semiconductor material are formed at respectively in first location division of first circuit base plate, and are positioned on the electrode.
In one embodiment of this invention, N type semiconductor material and P type semiconductor material are formed at respectively in second location division of second circuit base plate, and are positioned on the electrode.
In one embodiment of this invention, the N type semiconductor material of part is formed in first location division of first circuit base plate with the P type semiconductor material of part, and the P type semiconductor material of the N type semiconductor material of part and part is formed in second location division of second circuit base plate.
In one embodiment of this invention, when assembling first circuit base plate and second circuit base plate, alignd with second location division in first location division, N type semiconductor material and P type semiconductor material are electrically connected with electrode on first circuit base plate and second circuit base plate.
In one embodiment of this invention, the material of first location division and second location division is the thick film photoresist.
In one embodiment of this invention, have an insulating barrier on the first surface of first circuit base plate and the second surface respectively, and these electrodes are positioned on the insulating barrier of second surface.
In one embodiment of this invention, has a groove on the first surface of first circuit base plate, with ccontaining light-emitting diode chip for backlight unit.
In one embodiment of this invention, after first circuit base plate and second circuit base plate are provided, also are included in and form a reflectance coating in the above-mentioned groove.
In one embodiment of this invention, at light-emitting diode chip for backlight unit with after first circuit base plate is electrically connected, the manufacture method of this package structure for LED also is included in and forms a packing colloid on the first surface of first circuit base plate, and this packing colloid covers light-emitting diode chip for backlight unit.
In one embodiment of this invention, have an insulating barrier on the 3rd surface of second circuit base plate, and these electrodes are positioned on the insulating barrier on the 3rd surface.
In one embodiment of this invention, after first circuit base plate and second circuit base plate are provided, also are included on the electrode of first circuit base plate and second circuit base plate and form a scolder respectively.
In one embodiment of this invention, after first circuit base plate and second circuit base plate are provided, also be included on the second surface of first circuit base plate and form a plurality of grooves respectively, and above-mentioned electrode are formed at respectively in these grooves.
In one embodiment of this invention, after first circuit base plate and second circuit base plate are provided, also be included on the 3rd surface of second circuit base plate and form a plurality of grooves respectively, and above-mentioned electrode are formed in the groove respectively.
In one embodiment of this invention, after first circuit base plate and second circuit base plate are provided, also be included on the 3rd surface of the second surface of first circuit base plate and second circuit base plate and form a plurality of grooves respectively, and above-mentioned electrode is formed at respectively in these grooves.
In one embodiment of this invention, the mode that light-emitting diode chip for backlight unit is electrically connected with first circuit base plate comprises routing joining technique or flip-chip bond technology.
In one embodiment of this invention, the manufacture method of above-mentioned package structure for LED also comprises a heat sink arrangements on the 4th surface of second circuit base plate.
In one embodiment of this invention, wherein provide the step of first circuit base plate and second circuit base plate also to comprise: substrate and a substrate for the second time for the first time is provided, the supporting part that have a groove and be arranged in groove on the substrate this first time, and have above-mentioned electrode on the surface of substrate for the second time.Afterwards, substrate and second time substrate combines to utilize the chip join technology to make for the first time, and to form first circuit base plate, supporting part and electrode lay respectively at the both sides of first circuit base plate.
In one embodiment of this invention, for the first time substrate and this second time substrate be respectively a silicon substrate.
In one embodiment of this invention, the groove on the substrate first time forms by the above-mentioned silicon substrate of etching.
In one embodiment of this invention, above-mentioned groove runs through the substrate first time of part.
In one embodiment of this invention, light-emitting diode chip for backlight unit is disposed on the supporting part.
In one embodiment of this invention,, also be included in for the first time and form a packing colloid on the substrate with after first circuit base plate is electrically connected in light-emitting diode chip for backlight unit, this packing colloid covers light-emitting diode chip for backlight unit.
In one embodiment of this invention, the manufacture method of above-mentioned package structure for LED also comprises a diffuser plate is disposed on the first surface of first circuit base plate, and diffuser plate is positioned at the top of light-emitting diode chip for backlight unit.
In sum, package structure for LED of the present invention utilizes micro electronmechanical technology or semiconductor technology directly thermoelectric cooling element and light-emitting diode (LED) module to be combined, with the distance between shortening heat electric refrigerating element and the light-emitting diode chip for backlight unit, thus, can promote the radiating efficiency of whole package structure for LED, the useful life of prolongation light-emitting diode.
In addition, because the present invention is made in thermoelectric cooling element and light-emitting diode (LED) module respectively on one silicon substrate, again two substrates is combined to form package structure for LED.So, the volume of whole package structure for LED can be dwindled, and the manufacturing process of package structure for LED can be simplified.Moreover the present invention can make the location division respectively on the corresponding surface of two substrates, the reliability when improving the assembling of two plate bases with the contraposition by the location division.
For above-mentioned and other purposes, feature and advantage of the present invention can be become apparent, preferred embodiment cited below particularly, and conjunction with figs. are described in detail below.
Description of drawings
Fig. 1 illustrates the generalized section into according to a preferred embodiment of the invention package structure for LED.
Fig. 2 illustrates the generalized section that is electrically connected with the substrate formation by the flip-chip bond technology into one or more light-emitting diode chip for backlight unit of the present invention.
Fig. 3 illustrates the generalized section into according to another preferred embodiment of the invention package structure for LED.
Fig. 4 illustrates the generalized section into according to another preferred embodiment of the invention package structure for LED.
Fig. 5 illustrates the generalized section into according to another preferred embodiment of the invention package structure for LED.
Fig. 6 A illustrates and is the generalized section of the package structure for LED of a preferred embodiment more according to the present invention.
Fig. 6 B illustrates the circuit diagram into the package structure for LED shown in Fig. 6 A.
Fig. 7 A～7D illustrates the making flow process profile into according to a preferred embodiment of the invention package structure for LED.
Fig. 8 A～8C illustrates to the part of according to another embodiment of the present invention package structure for LED and makes the flow process profile.
Fig. 9 A～9E illustrates the making flow process profile into according to another embodiment of the present invention package structure for LED.
Figure 10 A～10B illustrates to the part of according to another embodiment of the present invention package structure for LED and makes the flow process profile.
Figure 11 A～11E illustrates the making flow process profile into according to another embodiment of the present invention package structure for LED.
The simple symbol explanation
100,100 ', 100 ", 100 " ': package structure for LED
110: the first substrates
112: electrode
114: the first insulating barriers
116: the second insulating barriers
118a: groove
118b: groove
119: reflectance coating
120: light-emitting diode chip for backlight unit
122:N type contact mat
124:P type contact mat
130: the second substrates
132: the three insulating barriers
134: groove
140: thermoelectric cooling element
142: the first patterned electrode layer
142a: first electrode
143: scolder
144: the second patterned electrode layer
144a: second electrode
146:N N-type semiconductor N material
148:P N-type semiconductor N material
150: the routing lead
160: radiator
170: packing colloid
180: diffuser plate
190: soldered ball
200,200 ', 200 ", 200 " ', 200 " ": package structure for LED
210: the first circuit base plates
210a: substrate for the first time
210b: substrate for the second time
211: electrode
212: electrode
213: groove
214: reflectance coating
215: the first location divisions
216: supporting part
217: groove
220: the second circuit base plates
222: electrode
224: the second location divisions
226: groove
230: thermoelectric cooling element
232:N N-type semiconductor N material
234:P N-type semiconductor N material
240: light-emitting diode chip for backlight unit
250: the routing lead
260: radiator
270: packing colloid
280: diffuser plate
290: current source
300: electronic component
300a: active element
300b: passive component
S1: first surface
S2: second surface
S3: the 3rd surface
S4: the 4th surface
Embodiment
Fig. 1 illustrates the generalized section into according to a preferred embodiment of the invention package structure for LED.Please refer to Fig. 1, package structure for LED 100 of the present invention mainly comprises: one first substrate 110, a plurality of light-emitting diode chip for backlight unit 120, one second substrate 130 and a thermoelectric cooling element 140.In this embodiment, with two light-emitting diode chip for backlight unit 120 of configuration on first substrate 110 is that example is to explain, yet, the user can be according to different user demands, configuration one or plural light-emitting diode chip for backlight unit 120 on first substrate 110, the present invention does not impose any restrictions for the number of light-emitting diode chip for backlight unit 120.
First substrate 110 has a first surface S1 and a second surface S2 corresponding with it.In this embodiment, first substrate 110 can be a silicon substrate, and driven for emitting lights diode chip for backlight unit 120 required circuit or other elements can be made on the silicon substrate by micro electronmechanical technology, with the purpose that reaches process integration and dwindle the volume of encapsulating structure.Light-emitting diode chip for backlight unit 120 is to be disposed on the first surface S1 of first substrate 110, and launching a light, and light-emitting diode chip for backlight unit 120 is electrically connected with first substrate 110.In this embodiment, light-emitting diode chip for backlight unit 120 sees through a routing lead (bondingwire) 150 and is electrically connected with electrode 112 on being formed at first substrate 110.And except utilizing the routing joining technique that the light-emitting diode chip for backlight unit 120 and first substrate 110 are formed to be electrically connected, please refer to shown in Figure 2, the present invention also can make the N type contact mat 122 of light-emitting diode chip for backlight unit 120 see through a plurality of soldered balls 190 with P type contact mat 124 by flip-chip bond technology or other modes and be electrically connected with first substrate, 110 formations, and the present invention does not impose any restrictions for the electric connection mode between the light-emitting diode chip for backlight unit 120 and first substrate 110.In addition, optionally dispose a packing colloid 170 on the first surface S1 of first substrate 110, this packing colloid 170 covers light-emitting diode chip for backlight unit 120, electrode 112 and routing lead 150, avoids being undermined with the protection said elements and makes moist; The material of packing colloid 170 can be epoxy resin (epoxy) or silica gel (silicone) etc.
Further, thermoelectric cooling element 140 comprises: one first patterned electrode layer 142, one second patterned electrode layer 144, a plurality of N type semiconductor material 146 and a plurality of P type semiconductor material 148.First patterned electrode layer 142 comprises a plurality of first electrode 142a, and these first electrodes 142a is disposed on the second surface S2 of first substrate 110.Similarly, second patterned electrode layer 144 comprises a plurality of second electrode 144a, and these second electrodes 144a is disposed on the 3rd surperficial S3 of second substrate 110.In this embodiment, these the first electrode 142a and the second electrode 144a can by plating or other modes be formed at respectively on first substrate 110 and second substrate 130, and the material of the first electrode 142a and the second electrode 144a can be Au/Ti or Cu/Ti.A plurality of N type semiconductor materials 146 and a plurality of P type semiconductor material 148 are to be disposed between the first electrode 142a and the second electrode 144a in staggered mode, and constitute with the first electrode 142a and the second electrode 144a and to be electrically connected, to form a current circuit, this current circuit can be a series connection loop or a loop in parallel.So, can put on the flow direction of the electric current of thermoelectric cooling element 140, make the upper end of thermoelectric cooling element 140 form cold junction, and its lower end form the hot junction, to carry out the conduction of heat energy by control.And thermoelectric material commonly used is the semi-conducting material with N type and P type characteristic, for example: Bi
2Te
3, Bi
2SbTe
3, sige alloy ... etc.In addition, on the 4th surperficial S4 of second substrate 130, optionally dispose a radiator 160, to quicken the conduction of heat energy.In one embodiment of this invention, can make N type semiconductor material 146 and P type semiconductor material 148 see through scolder 143 and be electrically connected prior to forming a plurality of scolders 143 on the subregion of the first electrode 142a and the second electrode 144a with the first electrode 142a and second electrode 144a formation.
Fig. 3 illustrates the generalized section into according to another preferred embodiment of the invention package structure for LED.Please refer to Fig. 3, this package structure for LED 100 ' is identical with the package structure for LED 100 shown in Fig. 1 haply, but, in this embodiment, on the first surface S1 of first substrate 110 and second surface S2, form one first insulating barrier 114 and one second insulating barrier 116 respectively, and form one the 3rd insulating barrier 132 in the 3rd surperficial S3 of second substrate 130, the element that originally directly is formed on first substrate 110 and second substrate 130 then is to be formed at first insulating barrier 114, on second insulating barrier 116 and the 3rd insulating barrier 132, so, can avoid producing between the element situation of leakage current by the setting of insulating barrier.Certainly, the user can be according to different user demands, optionally form insulating barrier on arbitrary in first surface S1, second surface S2 or the 3rd surperficial S3 or any two are surperficial, whether the present invention does not impose any restrictions for the configuration of first insulating barrier 114, second insulating barrier 116 and the 3rd insulating barrier 132.
Fig. 4 illustrates and is the generalized section of the package structure for LED of a preferred embodiment more according to the present invention.Please refer to Fig. 4, package structure for LED 100 " be similar haply to the package structure for LED 100 shown in Fig. 1; but; in this embodiment, be formed with a groove 118a on the first surface S1 of first substrate 110, and above-mentioned light-emitting diode chip for backlight unit 120 promptly is to be disposed in the groove 118a; thus; the light that light-emitting diode chip for backlight unit 120 is sent can reach better spotlight effect, and then increase its light extraction efficiency by the sidewall of groove 118a and the reflection of bottom.In addition, on the sidewall of groove 118a and bottom, optionally form a reflectance coating 119, to increase the chance of light reflection.
Please continue with reference to figure 4, the present invention can go up configuration one diffuser plate 180 in the first surface S1 of first substrate 110, this diffuser plate 180 is positioned at the top of light-emitting diode chip for backlight unit 120, so, the light that is sent by light-emitting diode chip for backlight unit 120 can make its light that sends more even via the diffusion of diffuser plate 180.This diffuser plate 180 can be lens, one by polymethyl methacrylate (poly (methyl) methacrylate, PMMA) formed sheet material, or other are suitable for carrying out the element of light diffusion.
In addition, at package structure for LED shown in Figure 4 100 " in; be formed with a plurality of groove 118b on the second surface S2 of first substrate 110; and electrode 142a is positioned at groove 118b; and on the 3rd surperficial S3 of second substrate 130, be formed with a plurality of grooves 134; similarly, electrode 144a is positioned at groove 134.Thus, each N type semiconductor material 146 can be imbedded respectively in first substrate 110 and second substrate 130 with the two ends of P type semiconductor material 148, with the distance of shortening heat electric refrigerating element 140 with light-emitting diode chip for backlight unit 120, and the distance between thermoelectric cooling element 140 and the radiator 160, the heat energy that is produced when making light-emitting diode chip for backlight unit 120 runnings can be excluded more quickly.Please refer to Fig. 5, the user can imbed in first substrate 110 each a N type semiconductor material 146 and an end of P type semiconductor material 148 according to different user demands.In addition, also each a N type semiconductor material 146 and an end of P type semiconductor material 148 can be imbedded in second substrate 130, the present invention does not impose any restrictions this.
Fig. 6 A illustrates and is the generalized section of the package structure for LED of a preferred embodiment more according to the present invention.Fig. 6 B illustrates the circuit diagram into the package structure for LED shown in Fig. 6 A.Please also refer to Fig. 6 A and 6B, this package structure for LED 100 ' " to the package structure for LED 100 shown in Fig. 4 " similar, but, this encapsulating structure 100 ' " be that the light-emitting diode chip for backlight unit shown in Fig. 4 120 is connected with thermoelectric cooling element 140; and supply its required electric current (or voltage) by a current source (or a voltage source), to simplify the design on the circuit.Because light-emitting diode chip for backlight unit 120 can be subjected to the influence of the heat energy accumulated, and its brightness is reduced.Yet, be that the heat energy that is produced when adopting thermoelectric cooling element 140 that it is operated is taken away in the present invention.And under the operation of same current, this package structure for LED 100 ' " than the package structure for LED shown in Fig. 4 100 " have a preferred luminous efficiency.
In this embodiment, light-emitting diode chip for backlight unit 120 is to see through routing mode (Wire Bond) to be electrically connected with thermoelectric cooling element 140.Yet light-emitting diode chip for backlight unit 120 also can see through flip-chip bond or conductive through hole modes such as (Plating Through Hole) and do with thermoelectric cooling element 140 and be electrically connected, and the present invention does not impose any restrictions this.In addition, when the heat absorbing end of thermoelectric cooling element 140 during in first substrate 110, this moment, the negative pole of thermoelectric cooling element 140 can be connected with the positive pole of light-emitting diode chip for backlight unit 120, pulled out the positive pole of thermoelectric cooling element 140 and the negative pole of light-emitting diode chip for backlight unit 120 at last, to form the series connection form.Otherwise if the negative pole of thermoelectric cooling element 140 is connected in the negative pole of light-emitting diode chip for backlight unit 120, and the positive pole of the two also is connected, and then forms parallel form.
In addition, please refer to Fig. 6 A, an electronic component 300 optionally is set on the first surface S1 of first substrate 110, this electronic component 300 is electrically connected with above-mentioned serial or parallel connection circuit, to reach required electrical requirement.Please refer to Fig. 6 B, this electronic component 300 comprises an active element 300a and/or a passive component 300b, and in this embodiment, active element 300a is a Zener diode, and with the usefulness as voltage stabilizing, and passive component 300b is the resistance in order to current limliting.Yet active element 300a also can be elements such as transistor, complementary metal oxide semiconductor element, to reach the function of electrostatic discharge (ESD) protection (ESD).And passive component 300b also can be element or its combinations such as electric capacity, inductance.The present invention does not impose any restrictions for the form of active element 300a and/or passive component 300b.
Below, collocation is illustrated the manufacture method of package structure for LED of the present invention.The making of package structure for LED of the present invention is to utilize micro electronmechanical technology or semiconductor packaging process, light-emitting diode (LED) module and thermoelectric cooling element are made on the silicon substrate, because silicon has good thermal conduction characteristic, therefore, the heat radiation of light-emitting diode chip for backlight unit will be helped, and the making flow process of whole package structure for LED can be simplified.
Fig. 7 A～7D illustrates the making flow process profile into according to a preferred embodiment of the invention package structure for LED.At first, please refer to Fig. 7 A, provide one first circuit base plate 210 and one second circuit base plate, 220, the first circuit base plates 210 to have first surface S1 and second surface S2 corresponding with it.On the first surface S1 of first circuit base plate 210 and second surface S2, have a plurality of electrodes 211,212 respectively.The first surface S1 of first circuit base plate 210 in order to the carrying light-emitting diode chip for backlight unit, and be positioned at its top electrode 211 in order to be electrically connected with light-emitting diode chip for backlight unit.Second circuit base plate 220 has one the 3rd surperficial S3 and one four surperficial S4 corresponding with it, and has a plurality of electrodes 222 corresponding to electrode 212 on the 3rd surperficial S3.
Similarly, optionally form an insulating barrier (not shown) on the 3rd surperficial S3 of the first surface S1 of first circuit base plate 210, second surface S2 and second circuit base plate 220, afterwards, again electrode 211,212,222 is formed on the insulating barrier, to prevent to produce between each element the situation of leakage current.
Next, please refer to Fig. 7 B, form a plurality of N type semiconductor materials 232 and a plurality of P type semiconductor materials 234 (in Fig. 7 B, only illustrating one group of N type semiconductor material 232 and P type semiconductor material 234) to explain.In this embodiment, these N type semiconductor materials 232 all are formed on the electrode 222 of second circuit base plate 220 in staggered mode with P type semiconductor material 234.Yet these N type semiconductor materials 232 all are formed on the electrode 212 of first circuit base plate 210 with the mode that P type semiconductor material 234 can also interlock; Or the N type semiconductor material 232 of inciting somebody to action part is formed on the electrode 212 of first circuit base plate 210 with P type semiconductor material 234, and remaining N type semiconductor material 232 then is to be formed on the electrode 222 of second circuit base plate 220 with P type semiconductor material 234.
In addition, be to form on the electrode 222 before N type semiconductor material 232 and the P type semiconductor material 234, can make N type semiconductor material 232 and P type semiconductor material 234 be easy to be electrically connected prior to forming a scolder (not shown) on the electrode 222 with electrode 222 formations.
Afterwards, please refer to shown in Fig. 7 C, first circuit base plate 210 and second circuit base plate 220 are fitted together.Above-mentioned N type semiconductor material 232 and P type semiconductor material 234 are between the electrode 222 of the electrode 212 of first circuit base plate 210 and second circuit base plate 220, and N type semiconductor material 232 sees through electrode 212,222 with P type semiconductor material 234 and is electrically connected with first circuit base plate 210 and second circuit base plate 220, to form a thermoelectric cooling element 230.
At last, please refer to Fig. 7 D, one or more light-emitting diode chip for backlight unit 240 is disposed on the first surface S1 of first circuit base plate 210, and utilizes the routing joining technique to form a routing lead 250, make light-emitting diode chip for backlight unit 240 see through routing lead 250 and be electrically connected with first circuit base plate 210.So far, promptly finish the making flow process of basic package structure for LED 200.Yet in the step shown in Fig. 7 D, light-emitting diode chip for backlight unit 240 also can be electrically connected with first circuit base plate, 210 formations by flip-chip bond technology or other modes, and the present invention does not impose any restrictions this.
Groove, reflectance coating and packing colloid
For promoting the light extraction efficiency of light-emitting diode chip for backlight unit 240 effectively, please refer to shown in Fig. 8 A, when first circuit base plate 210 is provided, can form a groove 216 in advance earlier on the first surface S1 of first circuit base plate 210, this groove 216 is in order to ccontaining light-emitting diode chip for backlight unit 240.In addition, on the sidewall of groove 216 and bottom, also optionally form a reflectance coating 217.Thus, after utilizing the making flow process shown in Fig. 7 A～7D to finish the making of whole package structure for LED 200 ', please refer to shown in Fig. 8 B, the light that light-emitting diode chip for backlight unit 240 sends can preferably go out light effect and produce by the reflection of reflectance coating 217.In addition, make moist for preventing that light-emitting diode chip for backlight unit 240 and routing lead 250 from avoiding being undermined, please refer to Fig. 8 C, can go up in the first surface S1 of first circuit base plate 210 and form a packing colloid 270, this packing colloid 270 covers light-emitting diode chip for backlight unit 240 and routing lead 250, is subjected to extraneous humidity effect and assorted dust pollution to prevent light-emitting diode chip for backlight unit 240 and routing lead 250 in the package structure for LED 200 '.The material of packing colloid 270 can be epoxy resin or silica gel etc.
Location division and assembling flow path thereof
For the assembling contraposition that makes first circuit base plate 210 and second circuit base plate 220 more accurate, reliability when assembling to improve thermoelectric cooling element, when first circuit base plate 210 and second circuit base plate 220 are provided, please refer to shown in Fig. 9 A, can go up prior to the second surface S2 of first circuit base plate 210 and form a plurality of first location divisions 215, each first location division 215 is to lay respectively at the wherein periphery of an electrode 212; Similarly, form a plurality of second location divisions 224 on the 3rd surperficial S3 of second circuit base plate 220, each second location division 224 is to lay respectively at the wherein periphery of an electrode 222, and the position of first location division 215 is corresponding to the position of second location division 224.Further, the generation type of first location division 215 and second location division 224, can be prior to the surperficial spin coating last layer thick film light group of circuit base plate, for example: SU-8, afterwards, utilize photoetching technique to form required location division in the periphery of electrode again.
Afterwards, please refer to shown in Fig. 9 B, form a plurality of N type semiconductor materials 232 and a plurality of P type semiconductor materials 234.In this embodiment, these N type semiconductor materials 232 all are formed on the electrode 212 of first circuit base plate 210 in staggered mode with P type semiconductor material 234.Yet these N type semiconductor materials 232 all are formed on the electrode 222 of second circuit base plate 220 with the mode that P type semiconductor material 234 can also interlock; Or the N type semiconductor material 232 of inciting somebody to action part is formed on the electrode 212 of first circuit base plate 210 with P type semiconductor material 234, and remaining N type semiconductor material 232 then is to be formed on the electrode 222 of second circuit base plate 220 with P type semiconductor material 234.
Next, please refer to shown in Fig. 9 C, first location division 215 of first circuit base plate 210 and second location division 224 of second circuit base plate 220 are aligned, and the two is combined, make the lower end of each N type semiconductor material 232 and each P type semiconductor material 234 be arranged in corresponding second location division 224, and an end of N type semiconductor material 232 and P type semiconductor material 234 is electrically connected with electrode 222 formations, can form the structure shown in Fig. 9 D.At last, please refer to Fig. 9 E, light-emitting diode chip for backlight unit 240 be disposed on the first surface S1 of first circuit base plate 210, and light-emitting diode chip for backlight unit 240 is electrically connected with first circuit base plate 210, can finish package structure for LED 200 " making.
Radiator
Be to improve the package structure for LED 200,200 ' and 200 shown in Fig. 7 D, Fig. 8 C and Fig. 9 E " radiating efficiency; can be in finishing package structure for LED 200,200 ' and 200 " making after, configuration one radiator on the 4th surperficial S4 of second circuit base plate 220 is to conduct the heat energy that falls to accumulate on second circuit base plate by radiator.
Groove
For increasing the radiating efficiency of whole package structure for LED, and make the assembling contraposition of first circuit base plate 210 and second circuit base plate 220 more accurate, when first circuit base plate 210 and second circuit base plate 220 are provided, please refer to shown in Figure 10 A, can go up prior to the second surface S2 of first circuit base plate 210 and form a plurality of grooves 217, and in each groove 217, form an electrode 212, similarly, on the 3rd surperficial S3 of second circuit base plate 220, form a plurality of grooves 226, and in each groove 226, form an electrode 222.Afterwards, equally according to the step shown in Fig. 8 B～Fig. 8 D to form the package structure for LED 200 shown in Figure 10 B " '.Because package structure for LED 200 " ' in its thermoelectric cooling element more near light-emitting diode chip for backlight unit 240, therefore, can quicken the conduction of heat energy, be beneficial to the heat radiation of light-emitting diode chip for backlight unit 240.In addition, because N type semiconductor material 232 and P type semiconductor material 234 are to be formed in the groove 217 of first circuit base plate 210 or in the groove 226 of second circuit base plate 220, therefore, when first circuit base plate 210 and 220 assemblings of second circuit base plate, N type semiconductor material 232 can be arranged in corresponding groove 217 or groove 226 with the other end of P type semiconductor material 234, so, the precision in the time of can promoting first circuit base plate 210 and the 220 assembling contrapositions of second circuit base plate effectively.
In addition, for promoting the luminous intensity of light-emitting diode chip for backlight unit 240, the present invention can be prior to forming the required groove structure of carrying light-emitting diode chip for backlight unit 240 and the electrode of thermoelectric cooling element respectively on two silicon substrates, afterwards, utilize the chip join technology that two silicon substrates are engaged again, to form a circuit base plate that is similar to first circuit base plate 210 shown in Fig. 8 A.
Figure 11 A～11E illustrates the manufacture method flow chart into first circuit base plate shown in a kind of Fig. 8 A.At first, please refer to Figure 11 A, substrate 210a and a substrate 210b for the second time for the first time is provided.The supporting part 216 that have a groove 213 and be arranged in groove 213 on the substrate 210a first time, the supporting part 216 of this island is in order to carrying light-emitting diode chip for backlight unit 240.Two of substrate 210b have above-mentioned electrode 211,212 respectively on the surface relatively for the second time.
In one embodiment of this invention, for the first time substrate 210a can be all silicon substrate with substrate 210b for the second time, and the groove 213 on the substrate 210a can form by the silicon substrate that part is worn in etching for the first time.
Then, please refer to Figure 11 B, substrate 210a and second time substrate 210b combines to utilize the chip join technology to make for the first time, to form first circuit base plate 210.The both sides that above-mentioned supporting part 216 and electrode 212 lay respectively at first circuit base plate 210.Afterwards, carry out the step shown in Fig. 8 B to Fig. 8 D equally, to form the package structure for LED 200 shown in Figure 11 C " ".In addition, for preventing package structure for LED 200 " " make moist or impaired, please refer to Figure 11 D, can go up in the substrate 210a first time and form a packing colloid 270, this packing colloid 270 covers light-emitting diode chip for backlight unit 240 and routing lead 250, is subjected to extraneous humidity effect and assorted dust pollution to prevent light-emitting diode chip for backlight unit 240 and routing lead 250 in the package structure for LED 200 '.Moreover, for the light that light-emitting diode chip for backlight unit 240 is sent more even, please refer to shown in Figure 11 E, can go up configuration one diffuser plate 280 in the substrate 210a first time, this diffuser plate 280 is positioned at the top of light-emitting diode chip for backlight unit 240, and it can be lens, one by the formed sheet material of polymethyl methacrylate, or other are suitable for carrying out the element of light diffusion, to increase the diffusion of light.
In addition, at above-mentioned package structure for LED 200,200 ', 200 ", 200 " ', 200 " " the making flow process in, can as shown in Figure 6A its light-emitting diode chip for backlight unit 240 be connected with thermoelectric cooling element 230 (or in parallel), simplifying circuit design, and can promote the luminous efficiency of light-emitting diode chip for backlight unit 240.In addition, also can be as shown in Figure 6A, the user also can be according to different circuit design in the surface configuration of first circuit base plate 210 required active element or passive component, to reach required electrical performance.The present invention does not impose any restrictions for the form of active element or passive component.
In sum, package structure for LED of the present invention is to utilize micro electronmechanical technology or semiconductor technology directly thermoelectric cooling element and light-emitting diode (LED) module to be combined, and promoting its heat-sinking capability, and can reduce the element thermal resistance and reduce contact heat resistance.So, will help to promote the performance of light-emitting diode, and reach the purpose in the useful life that prolongs light-emitting diode.
In addition, because the present invention is made in thermoelectric cooling element and light-emitting diode (LED) module respectively on one silicon substrate, again two substrates is combined to form package structure for LED.So, can dwindle whole package structure for LED volume, simplify the manufacturing process of package structure for LED, and can avoid in the prior art because of using adhesive agent to carry out joint between the different elements, and produce the problem that reliability reduces.Moreover the present invention can make the location division respectively on the corresponding surface of two substrates, the reliability when improving the assembling of two plate bases with the contraposition by the location division.
Though the present invention discloses as above with preferred embodiment; yet it is not in order to limit the present invention; those skilled in the art can do a little change and retouching without departing from the spirit and scope of the present invention, thus protection scope of the present invention should with accompanying Claim the person of being defined be as the criterion.
Claims (57)
1, a kind of package structure for LED comprises:
First substrate has first surface and second surface corresponding with it;
One or more light-emitting diode chip for backlight unit is suitable for launching light, is disposed at this first surface of this first substrate, and is electrically connected with this first substrate;
Second substrate is positioned at the below of this first substrate, and this second substrate has the 3rd surface and four surface corresponding with it, and this second surface is faced on the 3rd surface; And
Thermoelectric cooling element is disposed between the 3rd surface of this second surface of this first substrate and this second substrate, the heat energy that produces when conducting this light-emitting diode chip for backlight unit running,
Wherein have groove on this first surface of this first substrate, this light-emitting diode chip for backlight unit is disposed in this groove.
2, package structure for LED as claimed in claim 1, wherein this first substrate is a silicon substrate.
3, package structure for LED as claimed in claim 1 also comprises reflectance coating, and this reflectance coating is disposed at the sidewall and the bottom of this groove.
4, package structure for LED as claimed in claim 1 also comprises diffuser plate, and wherein this diffuser plate is disposed on this first surface of this first substrate, and is positioned at the top of this light-emitting diode chip for backlight unit.
5, package structure for LED as claimed in claim 4, wherein the material of this diffuser plate is a polymethyl methacrylate.
6, package structure for LED as claimed in claim 1 also comprises first insulating barrier, and this first insulating barrier is positioned on this first surface of this first substrate, and exposes this light-emitting diode chip for backlight unit.
7, package structure for LED as claimed in claim 1, wherein this light-emitting diode chip for backlight unit is electrically connected with this first substrate through routing joining technique or flip-chip bond technology.
8, package structure for LED as claimed in claim 1 also comprises packing colloid, and this packing colloid is positioned on this first surface of this first substrate, and covers this light-emitting diode chip for backlight unit.
9, package structure for LED as claimed in claim 8, wherein the material of this packing colloid is epoxy resin or silica gel.
10, package structure for LED as claimed in claim 1, wherein this second substrate is a silicon substrate.
11, package structure for LED as claimed in claim 1, wherein this light-emitting diode chip for backlight unit is electrically connected with this thermoelectric cooling element, to constitute series circuit or parallel circuits.
12, package structure for LED as claimed in claim 11 also comprises active element at least, and wherein this active element is electrically connected with this series circuit or this parallel circuits.
13, package structure for LED as claimed in claim 12, wherein this active element comprises Zener diode, transistor, complementary metal oxide semiconductor element one of them or its combination.
14, package structure for LED as claimed in claim 11 also comprises passive component at least, and wherein this passive component is electrically connected with this series circuit or this parallel circuits.
15, package structure for LED as claimed in claim 14, wherein this passive component comprises resistance, inductance, electric capacity one of them or its combination.
16, package structure for LED as claimed in claim 1, wherein this thermoelectric cooling element comprises:
First patterned electrode layer comprises a plurality of first electrodes, and those first electrodes are disposed on this second surface of this first substrate;
Second patterned electrode layer comprises a plurality of second electrodes, and those second electrodes are disposed on the 3rd surface of this second substrate;
A plurality of N type semiconductor materials; And
A plurality of P type semiconductor materials, wherein those N type semiconductor materials and those P type semiconductor materials are disposed between those first electrodes and those second electrodes in staggered mode, and be electrically connected with those second electrodes with those first electrodes, to form current circuit.
17, package structure for LED as claimed in claim 16, wherein this thermoelectric cooling element also comprises a plurality of scolders, respectively this scolder be disposed between this N type semiconductor material and this first electrode, between this N type semiconductor material and this second electrode, between this P type semiconductor material and this first electrode, and between this P type semiconductor material and this second electrode.
18, package structure for LED as claimed in claim 16 also comprises second insulating barrier, and this second insulating barrier is positioned on this second surface of this first substrate, and exposes those first electrodes.
19, package structure for LED as claimed in claim 16 also comprises the 3rd insulating barrier, and the 3rd insulating barrier is positioned on the 3rd surface of this second substrate, and exposes those second electrodes.
20, package structure for LED as claimed in claim 16, wherein respectively this N type semiconductor material is imbedded in this first substrate with an end of this P type semiconductor material respectively.
21, package structure for LED as claimed in claim 16, wherein respectively this N type semiconductor material is imbedded in this second substrate with an end of this P type semiconductor material respectively.
22, package structure for LED as claimed in claim 16 also comprises a plurality of location divisions, and those position points and are positioned at respectively this N type semiconductor material and the periphery of this P type semiconductor material respectively between this first substrate and this second substrate.
23, package structure for LED as claimed in claim 1 also comprises radiator, and this heat sink arrangements is on the 4th surface of this second substrate.
24, a kind of manufacture method of package structure for LED comprises the following steps:
First circuit base plate and second circuit base plate are provided, wherein this first circuit base plate has first surface and second surface corresponding with it, and this second circuit base plate has the 3rd surface and four surface corresponding with it, and has a plurality of electrodes on this second surface and the 3rd surface respectively;
Form a plurality of N type semiconductor materials and a plurality of P type semiconductor material, wherein those N type semiconductor materials and those P type semiconductor materials are disposed on those electrodes in staggered mode;
Assemble this first circuit base plate and this second circuit base plate, wherein, those N type semiconductor materials and those P type semiconductor materials are between those electrodes of this first circuit base plate and this second circuit base plate, and be electrically connected with those electrodes, forming thermoelectric cooling element, and those N type semiconductor materials and those P type semiconductor materials are through those electrodes and be electrically connected with this first circuit base plate and this second circuit base plate; And
One or more light-emitting diode chip for backlight unit is disposed on this first surface of this first circuit base plate, and it is electrically connected with this first circuit base plate.
25, the manufacture method of package structure for LED as claimed in claim 24, wherein those N type semiconductor materials and those P type semiconductor materials are formed at respectively on those electrodes of this second surface of this first circuit base plate.
26, the manufacture method of package structure for LED as claimed in claim 24, wherein those N type semiconductor materials and those P type semiconductor materials are formed at respectively on those electrodes on the 3rd surface of this second circuit base plate.
27, the manufacture method of package structure for LED as claimed in claim 24, some of those N type semiconductor materials and those P type semiconductor materials are formed on those electrodes of this second surface of this first circuit base plate, and on those electrodes on the 3rd surface that those N type semiconductor materials of part and those P type semiconductor materials are formed at this second circuit base plate.
28, the manufacture method of package structure for LED as claimed in claim 24, wherein also comprise a plurality of first location divisions on this second surface of this first circuit base plate, also comprise a plurality of second location divisions on the 3rd surface of this second circuit base plate, and those first location divisions and those second location divisions are positioned at the periphery of those electrodes respectively corresponding to those first location divisions.
29, the manufacture method of package structure for LED as claimed in claim 28, wherein those N type semiconductor materials and those P type semiconductor materials are formed at respectively in those first location divisions of this first circuit base plate, and are positioned on those electrodes.
30, the manufacture method of package structure for LED as claimed in claim 28, wherein those N type semiconductor materials and those P type semiconductor materials are formed at respectively in those second location divisions of this second circuit base plate, and are positioned on those electrodes.
31, the manufacture method of package structure for LED as claimed in claim 28, some of those N type semiconductor materials and those P type semiconductor materials are formed in those first location divisions of this first circuit base plate, and in those second location divisions that those N type semiconductor materials of part and those P type semiconductor materials are formed at this second circuit base plate.
32, the manufacture method of package structure for LED as claimed in claim 28, when wherein assembling this first circuit base plate and this second circuit base plate, with those second location divisions of aliging, those first location divisions, those N type semiconductor materials and those P type semiconductor materials are electrically connected with those electrodes on first circuit base plate and this second circuit base plate.
33, the manufacture method of package structure for LED as claimed in claim 28, wherein the material of those first location divisions and those second location divisions is the thick film photoresist.
34, the manufacture method of package structure for LED as claimed in claim 24 wherein have insulating barrier respectively on this first surface of this first circuit base plate and this second surface, and those electrodes is positioned on this insulating barrier of this second surface.
35, the manufacture method of package structure for LED as claimed in claim 24 wherein has groove on this first surface of this first circuit base plate, with ccontaining this light-emitting diode chip for backlight unit.
36, the manufacture method of package structure for LED as claimed in claim 35 wherein after this first circuit base plate and this second circuit base plate are provided, also are included in and form reflectance coating in this groove.
37, the manufacture method of package structure for LED as claimed in claim 35, wherein this light-emitting diode chip for backlight unit is with after this first circuit base plate is electrically connected, also be included on this first surface of this first circuit base plate and form packing colloid, this packing colloid covers this light-emitting diode chip for backlight unit.
38, the manufacture method of package structure for LED as claimed in claim 24 wherein have insulating barrier on the 3rd surface of this second circuit base plate, and those electrodes is positioned on this insulating barrier on the 3rd surface.
39, the manufacture method of package structure for LED as claimed in claim 24, wherein after this first circuit base plate and this second circuit base plate are provided, also are included on those electrodes of this first circuit base plate and this second circuit base plate and form scolder respectively.
40, the manufacture method of package structure for LED as claimed in claim 24, wherein after this first circuit base plate and this second circuit base plate are provided, also be included on this second surface of this first circuit base plate and form a plurality of grooves respectively, and those electrodes are formed at respectively in those grooves.
41, the manufacture method of package structure for LED as claimed in claim 24, wherein after this first circuit base plate and this second circuit base plate are provided, also be included on the 3rd surface of this second circuit base plate and form a plurality of grooves respectively, and those electrodes are formed at respectively in those grooves.
42, the manufacture method of package structure for LED as claimed in claim 24, wherein after this first circuit base plate and this second circuit base plate are provided, also be included on the 3rd surface of this second surface of this first circuit base plate and this second circuit base plate and form a plurality of grooves respectively, and those electrodes are formed at respectively in those grooves.
43, the manufacture method of package structure for LED as claimed in claim 24, the mode that this light-emitting diode chip for backlight unit is electrically connected with this first circuit base plate comprises routing joining technique or flip-chip bond technology.
44, the manufacture method of package structure for LED as claimed in claim 24 also comprises heat sink arrangements on the 4th surface of this second circuit base plate.
45, the manufacture method of package structure for LED as claimed in claim 24 wherein provides the step of this first circuit base plate and this second circuit base plate, also comprises:
For the first time substrate and substrate for the second time are provided, wherein, the supporting part that have groove and be arranged in this groove on the substrate this first time, this second time substrate the surface on have those electrodes; And
Utilize the chip join technology make this first time substrate with this second time substrate combine, to form this first circuit base plate, this supporting part and those electrodes lay respectively at the both sides of this first circuit base plate.
46, the manufacture method of package structure for LED as claimed in claim 45, wherein this first time substrate and this second time substrate be respectively silicon substrate.
47, the manufacture method of package structure for LED as claimed in claim 46 wherein is somebody's turn to do this groove on the substrate first time, forms by this silicon substrate of etching.
48, the manufacture method of package structure for LED as claimed in claim 46, wherein this groove runs through this of substrate of part first time.
49, the manufacture method of package structure for LED as claimed in claim 5, wherein this light-emitting diode chip for backlight unit is disposed on this supporting part.
50, the manufacture method of package structure for LED as claimed in claim 45, wherein in this light-emitting diode chip for backlight unit with after this first circuit base plate is electrically connected, also be included in and form packing colloid on the substrate this first time, this packing colloid covers this light-emitting diode chip for backlight unit.
51, the manufacture method of package structure for LED as claimed in claim 45 also comprise diffuser plate is disposed on this first circuit base plate, and this diffuser plate is positioned at the top of this light-emitting diode chip for backlight unit.
52, the manufacture method of package structure for LED as claimed in claim 24 also comprises being electrically connected this light-emitting diode chip for backlight unit and this thermoelectric cooling element, to constitute series circuit or parallel circuits.
53, the manufacture method of package structure for LED as claimed in claim 52, wherein this light-emitting diode chip for backlight unit is done with thermoelectric cooling element through routing, flip-chip bond or conductive through hole mode and is electrically connected.
54, the manufacture method of package structure for LED as claimed in claim 52 also comprises active element is electrically connected with this series circuit or this parallel circuits.
55, the manufacture method of package structure for LED as claimed in claim 54, wherein this active element comprises Zener diode, transistor, complementary metal oxide semiconductor element one of them or its combination.
56, the manufacture method of package structure for LED as claimed in claim 52 also comprises passive component is electrically connected with this series circuit or this parallel circuits.
57, the manufacture method of package structure for LED as claimed in claim 56, wherein this passive component comprises resistance, inductance, electric capacity one of them or its combination.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200710085667 CN100524864C (en) | 2006-03-22 | 2007-03-06 | LED encapsulation structure and its making method |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200610067628.9 | 2006-03-22 | ||
| CN200610067628 | 2006-03-22 | ||
| CN 200710085667 CN100524864C (en) | 2006-03-22 | 2007-03-06 | LED encapsulation structure and its making method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101106169A CN101106169A (en) | 2008-01-16 |
| CN100524864C true CN100524864C (en) | 2009-08-05 |
Family
ID=38999952
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200710085667 Expired - Fee Related CN100524864C (en) | 2006-03-22 | 2007-03-06 | LED encapsulation structure and its making method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100524864C (en) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101471337B (en) * | 2007-12-28 | 2012-03-14 | 富士迈半导体精密工业（上海）有限公司 | Light source die set with good radiating performance |
| TWI329181B (en) | 2008-02-15 | 2010-08-21 | Foxsemicon Integrated Tech Inc | Illumination device |
| JP4930548B2 (en) * | 2009-06-08 | 2012-05-16 | サンケン電気株式会社 | Light emitting device and manufacturing method thereof |
| CN102034805B (en) * | 2009-09-24 | 2012-12-26 | 财团法人工业技术研究院 | Package integrating thermoelectric component with chip |
| KR101055095B1 (en) * | 2010-03-09 | 2011-08-08 | 엘지이노텍 주식회사 | Light emitting device |
| CN103515499B (en) * | 2012-06-29 | 2016-04-06 | 联胜光电股份有限公司 | The thermal stress releasing structure of light-emitting diode |
| CN103414356A (en) * | 2013-08-16 | 2013-11-27 | 张晓民 | Shared monopole suspension type rectifier module |
| CN104061555A (en) * | 2014-06-12 | 2014-09-24 | 成都绿洲电子有限公司 | LED (Light-Emitting Diode) backlight source heat radiation structure |
| CN104201275B (en) * | 2014-08-05 | 2017-11-14 | 京东方科技集团股份有限公司 | A kind of preparation method of heat dissipating layer, the electronic device for having it and electronic device |
| SG10201501021PA (en) * | 2015-02-10 | 2016-09-29 | Delta Electronics Int L Singapore Pte Ltd | Package structure |
| CN106024732B (en) * | 2016-05-31 | 2018-05-15 | 科大国盾量子技术股份有限公司 | A kind of production method of device for temperature control |
| CN110793562B (en) * | 2019-11-07 | 2021-07-06 | 浪潮集团有限公司 | Detector module packaging structure and method for diamond sensor test |
| CN111726934B (en) * | 2020-07-02 | 2022-11-11 | 西安电子科技大学芜湖研究院 | Heat dissipation drive plate utilizing semiconductor for cooling |
| CN115172565A (en) * | 2022-07-12 | 2022-10-11 | 厦门大学 | Inverted deep ultraviolet light-emitting diode chip |
-
2007
- 2007-03-06 CN CN 200710085667 patent/CN100524864C/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN101106169A (en) | 2008-01-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN100524864C (en) | LED encapsulation structure and its making method | |
| TWI382564B (en) | Light emitting diode package structure and fabrication method thereof | |
| US7855396B2 (en) | Light emitting diode package structure | |
| TWI467737B (en) | Light emitting diode package, lighting device and light emitting diode package substrate | |
| US7612386B2 (en) | High power light emitting diode device | |
| CN101051665B (en) | Light emitting diode package having anodized insulation layer and fabrication method therefor | |
| US7525191B2 (en) | Semiconductor light source device | |
| US20060091415A1 (en) | LED package with structure and materials for high heat dissipation | |
| US20050116235A1 (en) | Illumination assembly | |
| US20060094137A1 (en) | Method of manufacturing ceramic LED packages | |
| US20080278954A1 (en) | Mounting Assembly for Optoelectronic Devices | |
| JP2003008083A (en) | Multiple chip semiconductor led assembly | |
| CN102610735B (en) | Light-emitting device with thermoelectric separated structure and manufacturing method of light-emitting device | |
| JP2005158957A (en) | Light emitting device | |
| JP2012503865A (en) | AC drive type light emitting diode module | |
| CN102214649A (en) | LED (light-emitting diode) packaging structure and manufacturing method thereof | |
| CN102376845A (en) | Packaging structure of light-emitting diode | |
| US20090309106A1 (en) | Light-emitting device module with a substrate and methods of forming it | |
| JP2005101665A (en) | Process for fabricating light emitting device of flip chip light emitting diode | |
| US20060243993A1 (en) | Light emitting diode chip and light emitting diode using the same | |
| US20070246726A1 (en) | Package structure of light emitting device | |
| JP3140595U (en) | Light emitting semiconductor device | |
| TWI766900B (en) | Light emitting device | |
| CN100367522C (en) | LED packaging structure with thermoelectric device | |
| Chan | Electronic packaging for solid-state lighting |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090805 Termination date: 20160306 |