CN104061555A - LED (Light-Emitting Diode) backlight source heat radiation structure - Google Patents

LED (Light-Emitting Diode) backlight source heat radiation structure Download PDF

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Publication number
CN104061555A
CN104061555A CN201410258620.5A CN201410258620A CN104061555A CN 104061555 A CN104061555 A CN 104061555A CN 201410258620 A CN201410258620 A CN 201410258620A CN 104061555 A CN104061555 A CN 104061555A
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CN
China
Prior art keywords
semiconductor
led
type semiconductor
connects
backboard
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Pending
Application number
CN201410258620.5A
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Chinese (zh)
Inventor
许伟
陈宏�
刘振玉
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CHENGDU LVZHOU ELECTRONICS Co Ltd
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CHENGDU LVZHOU ELECTRONICS Co Ltd
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Application filed by CHENGDU LVZHOU ELECTRONICS Co Ltd filed Critical CHENGDU LVZHOU ELECTRONICS Co Ltd
Priority to CN201410258620.5A priority Critical patent/CN104061555A/en
Publication of CN104061555A publication Critical patent/CN104061555A/en
Pending legal-status Critical Current

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Abstract

The invention relates to an LED (Light-Emitting Diode) backlight source heat radiation structure based on a TRIZ theory. The LED backlight source heat radiation structure comprises a semiconductor refrigerator, wherein the semiconductor refrigerator comprises a P-type semiconductor, an N-type semiconductor and a conductive metal block. According to the scheme, an initiative refrigerating method is adopted, so that the heat radiation capacity of a backlight source is greatly increased, the temperature of an LED light bar can be reduced to be less than room temperature, the purposes of not only carrying out effective heat radiation on an LED, but also reducing the thickness of the backlight source are achieved, and the TRIZ physical contradiction is perfectly solved.

Description

A kind of LED-backlit source heat-dissipating structure
Technical field
The present invention relates to backlight technology field, relate in particular to a kind of LED-backlit source heat-dissipating structure.
Background technology
In recent years, the advantages such as volume is little, power consumption is low owing to having due to light emitting diode, long service life, environmental protection, colour gamut wide, high brightness, become the preferred light source of LCD backlight gradually.But adopt LED also to exist as light source of liquid crystal display in the input power of inherent shortcoming: LED, there is about 70% input power to be converted into heat energy, can cause the temperature of LED and backlight sharply to rise, when particularly many great power LEDs use, generate heat more serious simultaneously.
TRIZ is the systematized technological innovation methodology of one that originates from the Soviet Union forties in 20th century.Contradiction matrix is the important tool of TRIZ solution technique contradiction.2003 editions two-dimensional matrix tables that contradiction matrix table is made up of jointly 40 inventive principle such as 48 general engineering parameters such as " quality of moving object ", " quality of stationary object ", " size of moving object ", " size of stationary object " and " cutting apart principle ", " extraction principle ", " local quality principle ".TRIZ theory is divided into technical contradiction and physics contradiction the engineering contradiction of technical system, is to solve physics contradiction, and this contradiction matrix proposes four large separation principles, is respectively Space Principles, time separation, the separating of separation based on condition and system level.
Based on the separation in space, the general position that changes lamp bar, LED is independent as light source and backlight miscellaneous part, be fixed in system, utilize the media such as optical fiber, the light that LED is sent imports in backlight, but the technical difficulty that this programme is specifically implemented is large, make optical fiber as transmitting medium, be difficult to ensure brightness and the homogeneity of backlight, also may cause the efficiency of light energy utilization low.
And separation based on condition is contradiction both sides to be separated under different conditions solve problem, can consider the heat absorption in LED-backlit source to separate with radiator portion, and it is controlled that heat is transmitted, heat radiation ability.By inquiry TRIZ scientific effects and phenomenon knowledge base, discovery semiconductor refrigerating can effectively be realized above-mentioned functions, and semi-conducting material has obvious paltie effect, is current this type of best refrigerating material.Compare with the conventional type of cooling, semiconductor refrigerating has following advantage: temperature can be down to normal temperature once; Can accurate temperature controlling; High reliability; Do not produce noise.
For effectively solving and lower the temperature to LED, the volume of backlight must be enough large, so that effective heat-dissipating space to be provided, on the other hand, in order to reach the requirement of slimming, the volume (showing as thickness) of backlight requires enough little, backlight volume reduce and increase between contradiction, in TRIZ theory, belong to physics contradiction.
Summary of the invention
The present invention is exactly in order to solve the problems of the technologies described above, and a kind of a kind of LED-backlit source LED radiator structure going out by TRIZ theory summary is provided, the volume that has effectively solved LED-backlit source reduce and increase between contradiction.
Technical scheme of the present invention is as follows:
A kind of LED-backlit source heat-dissipating structure, comprises semiconductor cooling device, and described semiconductor cooling device comprises P-type semiconductor, N-type semiconductor and conducting metal piece; P-type semiconductor connects power cathode, and N-type semiconductor connects positive source, is arranged symmetrically with up and down, and by conducting metal piece, both is coupled together at P-type semiconductor and the N-type semiconductor in backboard left side; P-type semiconductor and N-type semiconductor on backboard right side are arranged symmetrically with up and down, are connected respectively at conducting metal piece; Between two P-type semiconductors of the backboard left and right sides, conducting connects, and between two N-type semiconductors of the backboard left and right sides, conducting connects, and described conducting connects and composes one group of P-N semiconductor and connects.
Further, described conducting is connected to perforation connection on backboard.
Further, one group of P-N semiconductor connects corresponding two LED lamp.
Further, described P-N semiconductor is connected to many groups, between every group of P-N semiconductor, is connected in series.
Further, between P, N-type semiconductor and backboard, can make insulation processing.
Further, described insulation processing is that pottery is processed.
The present invention's beneficial effect is compared with prior art:
Radiator structure of the present invention efficiently solve LED-backlit volume source reduce and increase between contradiction, realize separating of the heat absorption of LED-backlit source and radiator portion, adopt the active refrigeration mode heat-sinking capability of backlight greatly, the temperature of LED lamp bar can be dropped to room temperature once, reach and can carry out efficiently radiates heat to LED, can reduce again the object of backlight thickness, TRIZ physics contradiction is perfectly solved.
Brief description of the drawings
Fig. 1 semiconductor refrigerating principle schematic of the present invention
Fig. 2 LED-backlit of the present invention source schematic diagram.
Detailed description of the invention
Below in conjunction with accompanying drawing, a kind of LED-backlit source heat-dissipating structure the present invention relates to is described further.
Taking 47 inches of LCD MODULE backlights as example, according to thermal balance, the heat producing all need to be absorbed in LED work, when calculating, taking every LED lamp as one group, each thermal power that need to absorb semiconductor cooler is like this:
Semi-conducting material is selected bismuth telluride, and its electrical parameter is as follows:
The coefficient of refrigerating performance of refrigerator is:
The electrical power of one group of P-N refrigerator consumption is:
If the voltage at each group semiconductor two ends is 1.5V, the electric current that flows through semiconductor two ends is:
If semi-conductive sectional area is S, length is L, and both exist following relation:
For effectively utilizing material, the interface of design P-type semiconductor and N-type semiconductor is identical with LED cross section.The appearance and size of LED is 5.6mm*3mm*0.9mm, and semiconductor sectional area is:
The length of single P type or N-type semiconductor is 0.31cm.
As described in Figure 1, semiconductor refrigerating is based on paltie effect, when formed by different conductors by electric current loop time, except producing irreversible Joule heat, to absorb heat from the external world, or emit heat to the external world, absorption and liberated heat are directly proportional to current strength.
As shown in Figure 2, the invention discloses a kind of LED-backlit source heat-dissipating structure, comprise semiconductor cooling device, described semiconductor cooling device comprises P-type semiconductor, N-type semiconductor and conducting metal piece; P-type semiconductor connects power cathode, and N-type semiconductor connects positive source, is arranged symmetrically with up and down, and by conducting metal piece, both is coupled together at P-type semiconductor and the N-type semiconductor in backboard left side; P-type semiconductor and N-type semiconductor on backboard right side are arranged symmetrically with up and down, are connected respectively at conducting metal piece; Between two P-type semiconductors of the backboard left and right sides, conducting connects, and between two N-type semiconductors of the backboard left and right sides, conducting connects, and described conducting connects and composes one group of P-N semiconductor and connects.
Further, described conducting is connected to perforation connection on backboard.
Further, one group of P-N semiconductor connects corresponding two LED lamp.
Further, described P-N semiconductor is connected to many groups, between every group of P-N semiconductor, is connected in series.
Further, between P, N-type semiconductor and backboard, can make insulation processing.
Further, described insulation processing is that pottery is processed.
Be only to understand the present invention for helping for the description of the understanding of detailed description of the invention, instead of be used for limiting of the present invention.Those skilled in the art all can utilize thought of the present invention to carry out some changes and variation, as long as its technological means does not depart from thought of the present invention and main points, still within protection scope of the present invention.

Claims (6)

1. a LED-backlit source heat-dissipating structure, comprises semiconductor cooling device and backboard, it is characterized in that, described semiconductor cooling device comprises P-type semiconductor, N-type semiconductor and conducting metal piece; P-type semiconductor connects power cathode, and N-type semiconductor connects positive source, is arranged symmetrically with up and down, and by conducting metal piece, both is coupled together at P-type semiconductor and the N-type semiconductor in backboard left side; P-type semiconductor and N-type semiconductor on backboard right side are arranged symmetrically with up and down, are connected respectively at conducting metal piece; Between two P-type semiconductors of the backboard left and right sides, conducting connects, and between two N-type semiconductors of the backboard left and right sides, conducting connects, and described conducting connects and composes one group of P-N semiconductor and connects.
2. radiator structure according to claim 1, is characterized in that, described conducting is connected to perforation on backboard and connects.
3. radiator structure according to claim 1, is characterized in that, one group of P-N semiconductor connects corresponding two LED lamp.
4. radiator structure according to claim 1, is characterized in that, described P-N semiconductor is connected to many groups, between every group of P-N semiconductor, is connected in series.
5. radiator structure according to claim 1, is characterized in that, between P, N-type semiconductor and backboard, makes insulation processing.
6. radiator structure according to claim 5, is characterized in that, described insulation processing is that pottery is processed.
CN201410258620.5A 2014-06-12 2014-06-12 LED (Light-Emitting Diode) backlight source heat radiation structure Pending CN104061555A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201410258620.5A CN104061555A (en) 2014-06-12 2014-06-12 LED (Light-Emitting Diode) backlight source heat radiation structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201410258620.5A CN104061555A (en) 2014-06-12 2014-06-12 LED (Light-Emitting Diode) backlight source heat radiation structure

Publications (1)

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CN104061555A true CN104061555A (en) 2014-09-24

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101106169A (en) * 2006-03-22 2008-01-16 财团法人工业技术研究院 LED encapsulation structure and its making method
US20090205696A1 (en) * 2008-02-15 2009-08-20 Nextreme Thermal Solutions, Inc. Thermoelectric Heat Pumps Providing Active Thermal Barriers and Related Devices and Methods
CN102106010A (en) * 2008-07-06 2011-06-22 拉莫斯有限公司 Split thermo-electric structure and devices and systems that utilize said structure
CN102760749A (en) * 2012-07-13 2012-10-31 京东方科技集团股份有限公司 Light-emitting device and manufacture method thereof
CN202546687U (en) * 2012-05-09 2012-11-21 京东方科技集团股份有限公司 Heat dissipation device of LED (light emitting diode) light bar, backlight module and display device
CN203893126U (en) * 2014-06-12 2014-10-22 成都绿洲电子有限公司 LED backlight heat radiation structure

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101106169A (en) * 2006-03-22 2008-01-16 财团法人工业技术研究院 LED encapsulation structure and its making method
US20090205696A1 (en) * 2008-02-15 2009-08-20 Nextreme Thermal Solutions, Inc. Thermoelectric Heat Pumps Providing Active Thermal Barriers and Related Devices and Methods
CN102106010A (en) * 2008-07-06 2011-06-22 拉莫斯有限公司 Split thermo-electric structure and devices and systems that utilize said structure
CN202546687U (en) * 2012-05-09 2012-11-21 京东方科技集团股份有限公司 Heat dissipation device of LED (light emitting diode) light bar, backlight module and display device
CN102760749A (en) * 2012-07-13 2012-10-31 京东方科技集团股份有限公司 Light-emitting device and manufacture method thereof
CN203893126U (en) * 2014-06-12 2014-10-22 成都绿洲电子有限公司 LED backlight heat radiation structure

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Application publication date: 20140924